WO2003064581A8 - Procedes et compositions pour le traitement chimique d'un substrat au moyen d'une technologie de mousse - Google Patents

Procedes et compositions pour le traitement chimique d'un substrat au moyen d'une technologie de mousse

Info

Publication number
WO2003064581A8
WO2003064581A8 PCT/US2002/003233 US0203233W WO03064581A8 WO 2003064581 A8 WO2003064581 A8 WO 2003064581A8 US 0203233 W US0203233 W US 0203233W WO 03064581 A8 WO03064581 A8 WO 03064581A8
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
foam
compositions
methods
treating
Prior art date
Application number
PCT/US2002/003233
Other languages
English (en)
Other versions
WO2003064581A1 (fr
Inventor
Bakul P Patel
Mihaela Cernat
Robert J Small
Original Assignee
Ekc Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ekc Technology Inc filed Critical Ekc Technology Inc
Priority to PCT/US2002/003233 priority Critical patent/WO2003064581A1/fr
Publication of WO2003064581A1 publication Critical patent/WO2003064581A1/fr
Publication of WO2003064581A8 publication Critical patent/WO2003064581A8/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00841—Cleaning during or after manufacture
    • B81C1/00857—Cleaning during or after manufacture after manufacture, e.g. back-end of the line process
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K23/00—Use of substances as emulsifying, wetting, dispersing, or foam-producing agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K23/00—Use of substances as emulsifying, wetting, dispersing, or foam-producing agents
    • C09K23/16—Amines or polyamines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/04—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors
    • C23G1/06—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors
    • C23G1/061—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors nitrogen-containing compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)

Abstract

La présente invention concerne des procédés et des compositions destinés à traiter une surface d'un substrat au moyen d'une technologie de mousse utilisant au moins un agent chimique de traitement. Plus particulièrement, l'invention concerne l'élimination de matière indésirable à partir de la surface de substrats comportant des éléments de petite taille, cette matière indésirable pouvant comprendre des composés organiques et inorganiques, et notamment des particules, des films issus d'une matière de photorésine et des traces d'autres impuretés telles que des métaux déposés pendant une planarisation ou une gravure. Selon la présente invention, un procédé de traitement d'une surface d'un substrat consiste à produire une mousse à partir d'une composition liquide, cette composition liquide comprenant un gaz, un agent de surface et au moins un composant choisi dans le groupe constitué par un fluorure, une hydroxylamine, une amine et un acide périodique, à mettre cette mousse en contact avec la surface d'un substrat, puis à éliminer la matière indésirable à partir de la surface dudit substrat.
PCT/US2002/003233 2002-01-28 2002-01-28 Procedes et compositions pour le traitement chimique d'un substrat au moyen d'une technologie de mousse WO2003064581A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/US2002/003233 WO2003064581A1 (fr) 2002-01-28 2002-01-28 Procedes et compositions pour le traitement chimique d'un substrat au moyen d'une technologie de mousse

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2002/003233 WO2003064581A1 (fr) 2002-01-28 2002-01-28 Procedes et compositions pour le traitement chimique d'un substrat au moyen d'une technologie de mousse

Publications (2)

Publication Number Publication Date
WO2003064581A1 WO2003064581A1 (fr) 2003-08-07
WO2003064581A8 true WO2003064581A8 (fr) 2003-11-27

Family

ID=27658040

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/003233 WO2003064581A1 (fr) 2002-01-28 2002-01-28 Procedes et compositions pour le traitement chimique d'un substrat au moyen d'une technologie de mousse

Country Status (1)

Country Link
WO (1) WO2003064581A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030171239A1 (en) 2002-01-28 2003-09-11 Patel Bakul P. Methods and compositions for chemically treating a substrate using foam technology
JP3994992B2 (ja) * 2004-08-13 2007-10-24 三菱瓦斯化学株式会社 シリコン微細加工に用いる異方性エッチング剤組成物及びエッチング方法
DE102007015085A1 (de) * 2007-03-29 2008-10-02 Asa Spezialenzyme Gmbh Verfahren zur Entfernung von Korrosionsschichten
KR101999641B1 (ko) 2011-10-05 2019-07-12 아반토 퍼포먼스 머티리얼즈, 엘엘씨 구리/아졸 중합체 억제를 갖는 마이크로일렉트로닉 기판 세정 조성물
CN103874679A (zh) * 2012-04-13 2014-06-18 亨斯迈石油化学有限责任公司 使用新颖的胺来稳定化季三烷基烷醇胺
CN104928090A (zh) * 2015-06-08 2015-09-23 东至群盛化工设备有限公司 一种化工污水输送管道清洁剂
CN110669597A (zh) * 2018-07-03 2020-01-10 安集微电子科技（上海）股份有限公司 一种含氟清洗液
CN109097201B (zh) * 2018-08-22 2021-02-05 江西宝盛半导体能源科技有限公司 一种去胶液及其制备方法与应用

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU499736B2 (en) * 1975-01-24 1979-05-03 American Cyanamid Company Non-caustic oven cleaner
JPS5356203A (en) * 1976-11-02 1978-05-22 Lion Corp Aerosol type cleaner composition
US5204016A (en) * 1989-06-16 1993-04-20 Golden Technologies Company, Inc. Non-caustic oven cleaner, method for making and method of use
WO1992004942A1 (fr) * 1990-09-19 1992-04-02 Atlantic Richfield Company Mousses de haute stabilite pour une suppression de longue duree de vapeurs d'hydrocarbures
US5981454A (en) * 1993-06-21 1999-11-09 Ekc Technology, Inc. Post clean treatment composition comprising an organic acid and hydroxylamine
US5279771A (en) * 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
US5380454A (en) * 1993-07-09 1995-01-10 Reckitt & Colman Inc. Low temperature non-caustic oven cleaning composition
US5915193A (en) * 1995-05-18 1999-06-22 Tong; Qin-Yi Method for the cleaning and direct bonding of solids
JPH08337793A (ja) * 1995-06-13 1996-12-24 Lion Corp レンジ用洗浄剤組成物
US5534199A (en) * 1995-09-22 1996-07-09 Winkler, Iii; J. A. Vehicle wash detergent/foam and method
US6417112B1 (en) * 1998-07-06 2002-07-09 Ekc Technology, Inc. Post etch cleaning composition and process for dual damascene system
US5998342A (en) * 1998-08-26 1999-12-07 Cottrell International, Llc Foaming enzyme spray cleaning composition and method of delivery
US6090217A (en) * 1998-12-09 2000-07-18 Kittle; Paul A. Surface treatment of semiconductor substrates
JP4202516B2 (ja) * 1999-03-18 2008-12-24 花王株式会社 剥離剤組成物
US6248704B1 (en) * 1999-05-03 2001-06-19 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductors devices
US6235693B1 (en) * 1999-07-16 2001-05-22 Ekc Technology, Inc. Lactam compositions for cleaning organic and plasma etched residues for semiconductor devices
US6303552B1 (en) * 1999-08-04 2001-10-16 Napier International Technologies, Inc. Aerosol paint stripper compositions
WO2001027986A1 (fr) * 1999-10-13 2001-04-19 Gebrüder Decker GmbH & Co. KG Procede et dispositif de traitement surfacique d'articles

Also Published As

Publication number Publication date
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