WO2003054943A1 - Support substrate for thin-sheet work - Google Patents

Support substrate for thin-sheet work Download PDF

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Publication number
WO2003054943A1
WO2003054943A1 PCT/JP2002/012978 JP0212978W WO03054943A1 WO 2003054943 A1 WO2003054943 A1 WO 2003054943A1 JP 0212978 W JP0212978 W JP 0212978W WO 03054943 A1 WO03054943 A1 WO 03054943A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor wafer
support substrate
support
support region
tape
Prior art date
Application number
PCT/JP2002/012978
Other languages
French (fr)
Japanese (ja)
Inventor
Masahiko Kitamura
Original Assignee
Disco Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corporation filed Critical Disco Corporation
Priority to US10/467,889 priority Critical patent/US20040072520A1/en
Priority to AU2002354178A priority patent/AU2002354178A1/en
Publication of WO2003054943A1 publication Critical patent/WO2003054943A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Definitions

  • the present invention relates to a support substrate for supporting a thin workpiece such as a semiconductor wafer.
  • a thin workpiece such as a semiconductor wafer.
  • BACKGROUND ART As is well known to those skilled in the art, in the manufacture of a semiconductor chip, a large number of rectangular regions are partitioned by streets arranged in a grid on the surface of a semiconductor wafer, and a semiconductor is formed in each of the rectangular regions. The circuit is applied. Usually, the back surface of the semiconductor wafer 18 is ground to reduce the thickness of the semiconductor wafer 18, and then the semiconductor wafer is cut along the street to separate the rectangular areas individually. Then, a semiconductor chip is formed.
  • a groove having a required depth is formed along the street from the front of the semiconductor wafer, and then the back surface of the semiconductor wafer is ground. It is also practiced to reduce the thickness of the semiconductor layer 8 to be less than the depth of the above-mentioned groove, and to form a semiconductor chip by separating the force and thus the rectangular areas individually.
  • the semiconductor wafer is held on the chucking means with the front surface facing downward, that is, with the front and back turned upside down, and grinding means is applied to the back surface of the semiconductor wafer.
  • the holding of the semiconductor layer 18 on the chuck means comprises forming the holding area of the chuck means from a porous material.
  • the thickness of the semiconductor A8 is significantly reduced, for example, 100 m or less, especially 50 m or less. Is often desired.
  • the rigidity of the semiconductor wafer becomes extremely small, and the semiconductor wafer is transported, for example, transported into the cassette container from above the chuck means. Becomes extremely difficult.
  • a relatively rigid tape such as a polyethylene terephthalate film or sheet, is used as a tape that is adhered to the surface of the semiconductor A through an appropriate adhesive or pressure-sensitive adhesive, the transport of the semiconductor A can be achieved. Possible forces ⁇ Semiconductors When a relatively rigid tape is adhered to the surface of the semiconductor device, it is quite difficult to separate the semiconductor chips individually separated from the tape without damaging them.
  • a main object of the present invention is to provide a supporting substrate for a thin work piece such as a semiconductor wafer, without adversely affecting the grinding of the thin work piece and having a rigidity. It is not necessary to attach a relatively high tape to the surface of the sheet-like workpiece, and the semiconductor wafer can be easily removed even when the sheet-like workpiece is ground to be extremely thin.
  • the purpose is to provide a support substrate that can be transported.
  • the present inventors have used a magnetic tape or a magnetic tape as a tape to be adhered to one surface of a thin plate-shaped workpiece, in the case of a semiconductor wafer, the surface thereof, and at least partially use a porous tape.
  • the main object can be achieved by using a support substrate formed of a conductive material and including a support region that is at least partially magnetized or magnetic. That is, according to one aspect of the present invention, as a support substrate for achieving the above main object, a support substrate for a thin plate-shaped workpiece having a magnetic tape adhered to one side thereof, at least partially porous.
  • a support substrate is provided, comprising a support region formed from a material and at least partially magnetized.
  • the support region is formed of a porous material containing a plurality of dispersed magnets, or is formed of a magnetically-porous material. It is advantageous to include a frame surrounding the support area.
  • a support substrate for achieving the above-mentioned main object is a support substrate for a thin plate-shaped workpiece having a magnetic tape adhered to one side thereof, and at least partially porous.
  • a support substrate is provided, comprising a support region formed from a material and at least partially magnetic.
  • the support region is preferably formed from a porous and magnetic material. Conveniently, it includes a frame surrounding the support area.
  • FIG. 1 is a perspective view showing a semiconductor wafer as a typical example of a thin plate workpiece.
  • FIG. 2 is a perspective view showing a preferred embodiment of a support substrate configured according to the present invention.
  • FIG. 3 is a perspective view showing a state in which the semiconductor wafer of FIG. 1 is turned upside down and adsorbed on the support substrate of FIG. 2;
  • FIG. 4 is a cross-sectional view showing a state where the semiconductor wafer adsorbed on the support substrate is held on a chuck means of a grinding machine and the back surface of the semiconductor wafer is ground.
  • FIG. 1 illustrates a semiconductor wafer 2 which is a typical example of a thin plate workpiece.
  • Figure The semiconductor wafer 2 shown has a shape in which a straight edge 4 called an orientation flat is formed in a part of a disk shape, and a large number of rectangular areas are formed on the surface thereof by streets 6 arranged in a grid. 8 are sectioned. Each of the rectangular regions 8 is provided with a semiconductor circuit.
  • a tape is applied to the surface of the semiconductor wafer 2 to protect the semiconductor circuit provided in the rectangular area 8. 10 is stuck.
  • a magnetic powder is applied to the front and Z or back surfaces of a synthetic resin film or a sheet having relatively low rigidity such as a polyolefin film or a sheet to impart magnetic properties.
  • Magnetic tape is used.
  • Such a tape 10 is affixed to the surface of the semiconductor wafer 2 through a well-known adhesive whose adhesiveness is reduced or reduced by irradiating ultraviolet rays or by heating and hardening. It is very convenient.
  • the tape 10 is irradiated with ultraviolet rays or the tape 10 is irradiated. To reduce or eliminate the adhesiveness of the adhesive.
  • the illustrated support substrate 12 has a disk shape as a whole, and includes a support region 14 located at the center thereof and a frame 16 surrounding the support region 14.
  • the support region 14 has a shape corresponding to the shape of the semiconductor wafer 2 and has a straight edge 18 corresponding to the straight edge 4 of the semiconductor wafer 2. It is important that the support region 14 is formed from a porous material. Preferable examples of the porous material forming the support region 14 include a porous ceramic.
  • a plurality (six in the illustrated case) of magnets 20 are dispersedly embedded in the porous material forming the support region 14. Thus, due to the presence of magnet 20, support region 14 is partially magnetized.
  • the frame 16 of the support substrate 12 can be formed from a suitable synthetic resin or a suitable metal such as stainless steel.
  • the support region 14 and the frame 16 surrounding it are connected sufficiently firmly.
  • the upper surface of the support region 14 and the upper surface of the frame 16 are flush with each other, and also the back surface of the support region 14 and the frame 16 It is convenient to make the back surface of the same plane.
  • the support area 14 is partially magnetized by the magnet 20 buried in the support area 14, it has a magnetic property attached to the surface of the semiconductor wafer 2. Accordingly, the semiconductor wafer 2 is magnetically attracted onto the support region 14 of the support substrate 12.
  • a grinding machine used for grinding the back surface of the semiconductor wafer 2, for example, sold under the trade name “DFG841” by Disco Corporation.
  • chuck means 22 are provided.
  • the checking means 22 has a disk-shaped porous central member 24 and an annular casing 26 surrounding the central member 24.
  • the outer diameter of the central member 24 fixed in the annular casing 26 corresponds to the outer diameter of the support region 14 in the support substrate 12 and therefore the outer diameter of the semiconductor wafer 2.
  • the outer diameter of the thing 26 is made to correspond to the outer diameter of the frame 16 in the support substrate 12.
  • the center member 24 and the upper surface of the annular casing 26 are flush with each other.
  • the support substrate 12 which magnetically adsorbs the semiconductor wafer 2 on the support region 14 is aligned with the support region 14 to the central member 24 and is chucked.
  • Means 22 are placed on.
  • the central member 24 of the chuck means 22 is communicated with a vacuum source (not shown) via an appropriate suction path.
  • the grinding means 28 is constituted by an annular grinding tool having a grinding tool containing diamond abrasive grains on its lower surface.
  • the grinding means 28 is pressed against the back surface of the semiconductor wafer 2 ⁇ 3. After the back surface of the semiconductor wafer 2 is ground as required, the operation of the vacuum source is stopped, the suction operation of the chuck means 22 is released, and the support substrate 12 and the semiconductor magnetically attracted to the support substrate 12 are released.
  • the wafer 2 is detached from the chuck means 22 and transported to a required place, for example, a cassette container. In a state where the semiconductor wafer 2 is adsorbed on the support substrate 12, an appropriate portion of the support substrate 12, for example, a frame 16, is gripped and is adsorbed on the support substrate 12. The semiconductor wafer 2 can be transported.
  • the semiconductor wafer 2 is transported as required without being damaged. be able to. Since the semiconductor wafer 2 is attracted onto the support region 14 of the support substrate 12 by magnetically attracting the tape 10 attached to the surface thereof, the semiconductor wafer 2 is separated from the support substrate 12 by the semiconductor wafer. When detaching the wafer 2, the semiconductor layer 82 can be detached from the support substrate 12 easily and sufficiently with a relatively small force.
  • a plurality of magnets 20 are dispersed in the porous material forming the support region 14 in the support substrate 12, and the support region 14 is partially magnetized.
  • magnetite powder is mixed throughout the porous material forming the support region 14 to magnetize the support region 14 entirely, or the entire support region 14 is magnetized.
  • the support region 14 may be entirely magnetized by being formed from a porous material.
  • at least a partially magnetized magnetic tape can be used as the tape 10 to be adhered to the surface of the semiconductor wafer 2.
  • the magnetized tape include a synthetic resin film having relatively low rigidity such as a polyolefin film or a sheet, or a tape in which magnet powder is applied to the front surface, the Z surface, or the back surface of a sheet.
  • Tape 10 attached to the surface of semiconductor wafer 2 is magnetic tape
  • the magnetic tape 10 can be magnetically attracted to the magnetic tape 10, and the semiconductor layer 2 having the magnetic tape 10 adhered to the surface thereof can be magnetically attracted.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

A magnetic tape or a magnetized tape is stuck onto one side of a thin-sheet work or onto both sides of a semiconductor wafer. The support substrate is made at least partly of a porous material and has a support region which is at least partially magnetized or is magnetic.

Description

明細書 薄板状被加工物のための支持基板 技術分野 本発明は、 半導体ゥェ一八の如き薄板状被加工物を支持するための支持基板に 関する。 背景技術 当業者には周知の如く、 半導体チップの製造においては、 半導体ゥェ一ハの表 面に、 格子状に配列されたストリートによって多数の矩形領域を区画し、 かかる 矩形領域の各々に半導体回路を施している。 そして、 通常は、 半導体ゥェ一八の 裏面を研削して半導体ゥェ一八の厚さを低減せしめ、 次いでストリ一トに沿って 半導体ゥェ一ハを切削し、 矩形領域を個々に分離して半導体チップを形成して 、 る。 近時においては、 半導体ゥェ一八の裏面の研削に先立って半導体ゥェ一八の 正面からストリートに沿つて所要深さの溝を形成し、 しかる後に半導体ゥェ一ハ の裏面を研削して半導体ゥエー八の厚さを上記溝の深さ以下にせしめ、 力、くして 矩形領域を個々に分離して半導体チップを形成することも実施されている。 いず れの場合にも、 半導体ゥェ一八の裏面を研削する際には、 半導体回路を保護する ために半導体ゥェ一ハの表面にテープを貼着し、 力、かるテープを貼着した表面を 下方に向けた状態で、 即ち表裏を反転した状態で半導体ゥエーハをチヤック手段 上に保持し、 半導体ゥェ一八の裏面に研削手段を作用せしめる。 チャック手段上 への半導体ゥェ一八の保持は、 チヤック手段の保持領域を多孔性材料から形成し TECHNICAL FIELD The present invention relates to a support substrate for supporting a thin workpiece such as a semiconductor wafer. BACKGROUND ART As is well known to those skilled in the art, in the manufacture of a semiconductor chip, a large number of rectangular regions are partitioned by streets arranged in a grid on the surface of a semiconductor wafer, and a semiconductor is formed in each of the rectangular regions. The circuit is applied. Usually, the back surface of the semiconductor wafer 18 is ground to reduce the thickness of the semiconductor wafer 18, and then the semiconductor wafer is cut along the street to separate the rectangular areas individually. Then, a semiconductor chip is formed. In recent years, prior to grinding the back surface of the semiconductor wafer, a groove having a required depth is formed along the street from the front of the semiconductor wafer, and then the back surface of the semiconductor wafer is ground. It is also practiced to reduce the thickness of the semiconductor layer 8 to be less than the depth of the above-mentioned groove, and to form a semiconductor chip by separating the force and thus the rectangular areas individually. In either case, when grinding the back surface of the semiconductor wafer, apply tape to the surface of the semiconductor wafer to protect the semiconductor circuit, and apply force and curl tape. The semiconductor wafer is held on the chucking means with the front surface facing downward, that is, with the front and back turned upside down, and grinding means is applied to the back surface of the semiconductor wafer. The holding of the semiconductor layer 18 on the chuck means comprises forming the holding area of the chuck means from a porous material.
、 保持領域を通して吸引することによって遂行される。 近時においては、 著しく小型且つ軽量の半導体チップを形成するために、 半導 体ゥエー八の厚さを著しく薄くする、 例えば 1 0 0 m以下、 殊に 5 0〃m以下 にすることが望まれることが少なくない。 然るに、 半導体ゥェ一八の厚さが著し く薄くなると、 半導体ゥエーハの剛性が著しく小さくなり、 半導体ゥェ一ハの搬 送、 例えばチャック手段上からカセット容器内に搬入するための搬送、 が著しく 困難になる。 半導体ゥエー八の表面に適宜の接着乃至粘着剤を介して貼着される テープとして剛性が比較的高いテープ、 例えばポリエチレンテレフタレ一トフィ ルム又はシート、 を使用すると、 半導体ゥェ一八の搬送が可能になる力《、 半導体 ゥエー八の表面に剛性が比較的高いテープを貼着すると、 個々に分離された半導 体チップを損傷せしめることなくテープから剝離せしめること力相当困難になる This is accomplished by aspiration through the holding area. In recent years, in order to form extremely small and light semiconductor chips, the thickness of the semiconductor A8 is significantly reduced, for example, 100 m or less, especially 50 m or less. Is often desired. However, when the thickness of the semiconductor wafer 18 becomes extremely thin, the rigidity of the semiconductor wafer becomes extremely small, and the semiconductor wafer is transported, for example, transported into the cassette container from above the chuck means. Becomes extremely difficult. If a relatively rigid tape, such as a polyethylene terephthalate film or sheet, is used as a tape that is adhered to the surface of the semiconductor A through an appropriate adhesive or pressure-sensitive adhesive, the transport of the semiconductor A can be achieved. Possible forces << Semiconductors When a relatively rigid tape is adhered to the surface of the semiconductor device, it is quite difficult to separate the semiconductor chips individually separated from the tape without damaging them.
発明の開示 従って、 本発明の主たる目的は、 半導体ゥェ一八の如き薄板状被加工物のため の支持基板にして、 薄板状被加工物の研削に悪影響を及ぼすことなく、 そしてま た剛性が比較的高いテープを薄板状被加工物の表面に貼着する必要なくして、 薄 板状被加工物を研削してその厚さを著しく薄くした場合にも充分容易に半導体ゥ ェ一ハを搬送することを可能にする支持基板を提供することである。 本発明者は、 薄板状被加工物の片面、 半導体ゥェ一八の場合にはその表面、 に 貼着するテープとして磁性テープ或いは磁ィ匕テープを使用すると共に、 少なくと も部分的に多孔性材料から形成され且つ少なくとも部分的に磁ィ匕された或いは磁 性である支持領域を含む支持基板を使用することによって、 上記主たる目的を達 成できることを見出した。 即ち、 本発明の一局面によれば、 上記主たる目的を達成する支持基板として、 片面に磁性テープが貼着された薄板状被加工物のための支持基板にして、 少なく とも部分的に多孔性材料から形成され且つ少なくとも部分的に磁化されている支 持領域を含む、 ことを特徵とする支持基板が提供される。 該支持領域は、 分散された複数個の磁石を含有する多孔性材料から形成されて いる、 或いは磁ィヒされた多孔性材料から形成されているの力好ましい。 該支持領 域を囲繞する枠を含むの力好都合である。 本発明の他の局面によれば、 上記主たる目的を達成する支持基板として、 片面 に磁ィ匕テープが貼着された薄板状被加工物のための支持基板にして、 少なくとも 部分的に多孔性材料から形成され且つ少なくとも部分的に磁性である支持領域を 含む、 ことを特徴とする支持基板が提供される。 該支持領域は多孔性且つ磁性材料から形成されてレヽるのが好適である。 該支持 領域を囲繞する枠を含むのが好都合である。 図面の簡単な説明 DISCLOSURE OF THE INVENTION Accordingly, a main object of the present invention is to provide a supporting substrate for a thin work piece such as a semiconductor wafer, without adversely affecting the grinding of the thin work piece and having a rigidity. It is not necessary to attach a relatively high tape to the surface of the sheet-like workpiece, and the semiconductor wafer can be easily removed even when the sheet-like workpiece is ground to be extremely thin. The purpose is to provide a support substrate that can be transported. The present inventors have used a magnetic tape or a magnetic tape as a tape to be adhered to one surface of a thin plate-shaped workpiece, in the case of a semiconductor wafer, the surface thereof, and at least partially use a porous tape. It has been found that the main object can be achieved by using a support substrate formed of a conductive material and including a support region that is at least partially magnetized or magnetic. That is, according to one aspect of the present invention, as a support substrate for achieving the above main object, a support substrate for a thin plate-shaped workpiece having a magnetic tape adhered to one side thereof, at least partially porous. A support substrate is provided, comprising a support region formed from a material and at least partially magnetized. Preferably, the support region is formed of a porous material containing a plurality of dispersed magnets, or is formed of a magnetically-porous material. It is advantageous to include a frame surrounding the support area. According to another aspect of the present invention, a support substrate for achieving the above-mentioned main object is a support substrate for a thin plate-shaped workpiece having a magnetic tape adhered to one side thereof, and at least partially porous. A support substrate is provided, comprising a support region formed from a material and at least partially magnetic. The support region is preferably formed from a porous and magnetic material. Conveniently, it includes a frame surrounding the support area. BRIEF DESCRIPTION OF THE FIGURES
図 1は、 薄板状被加工物の典型例である半導体ゥエーハを示す斜面図。 図 2は、 本発明に従って構成された支持基板の好適実施形態を示す斜面図。 図 3は、 図 1の半導体ゥェ一ハを表裏を反転して図 2の支持基板上に吸着した 状態を示す斜面図。 図 4は、 支持基板上に吸着された半導体ゥェ一ハを研削機のチヤック手段上に 保持して半導体ゥェ一ハの裏面を研削している状態を示す断面図。 発明を実施するための最良の形態 以下、 添付図面を参照して、 本発明に従って構成された支持基板の好適実施形 態について、 更に詳述する。 図 1は、 薄板状被加工物の典型例である半導体ゥェ一ハ 2を図示している。 図 示の半導体ゥェ一ハ 2は円板形状の一部にオリエンテーションフラッ卜と称され る直線縁 4を形成した形状であり、 その表面には格子状に配列されたストリート 6によって多数の矩形領域 8が区画されている。 矩形領域 8の各々には半導体回 路が施されている。 半導体ゥエー八 2の裏面を研削して半導体ゥェ一ハ 2の厚さ を低減せしめる際には、 矩形領域 8に施されている半導体回路を保護するために 、 半導体ゥエーハ 2の表面にはテープ 1 0が貼着される。 図示の実施形態におい ては、 テープ 1 0として、 ポリオレフインフィルム又はシ一卜の如き剛性が比較 的低い合成樹脂フィルム又はシ一卜の表面及び Z又は裏面に磁性粉を塗布して磁 性を付与した磁性テープが使用されている。 かようなテープ 1 0は、 紫外線を照 射することによって或いは加熱硬ィヒせしめることによつて粘着性が消失乃至低減 せしめられる周知の粘着剤を介して、 半導体ゥエーハ 2の表面に貼着されている の力く好都合である。 半導体ゥェ一ハ 2をストリート 6に沿って個々に分離して複 数個の半導体チップにせしめた後にテープ 1 0から半導体チップを離脱せしめる 時には、 テープ 1 0に紫外線を照射し或いはテープ 1 0を加熱硬ィ匕せしめて、 粘 着剤の粘着性を消失乃至低減せしめることができる。 図 2には本発明に従って構成された支持基板の好適実施形態が図示されている 。 図示の支持基板 1 2は全体として円板形状であり、 その中央部に位置する支持 領域 1 4とこの支持領域 1 4を囲繞する枠 1 6とから構成されている。 支持領域 1 4は上記半導体ゥェ一ハ 2の形状に対応した形状を有し、 半導体ゥェ一ハ 2の 直線縁 4に対応した直線縁 1 8を有する。 支持領域 1 4は多孔性材料から形成さ れていることが重要である。 支持領域 1 4を形成する多孔性材料の好適例として は、 多孔性セラミックを挙げることができる。 図示の実施形態においては、 支持 領域 1 4を形成している多孔性材料中に、 複数個 （図示の場合は 6個） の磁石 2 0が分散して埋設されている。 従って、 磁石 2 0の存在に起因して支持領域 1 4 は部分的に磁ィヒされている。 支持基板 1 2の枠 1 6は適宜の合成樹脂或いはステ ンレス鋼の如き適宜の金属から形成することができる。 支持領域 1 4とこれを囲 繞する枠 1 6は充分強固に結合されている。 支持領域 1 4の上面と枠 1 6の上面 とは同一平面をなすのが好都合であり、 そしてまた支持領域 1 4の裏面と枠 1 6 の裏面とも同一平面をなすのが好都合である。 半導体ゥェ一ハ 2の裏面を研削する際には、 図 3に図示する如く、 表面にテー プ 1 0が貼着された半導体ゥエーハ 2を表面を下方に向けた状態にして、 即ち表 裏を反転して、 支持基板 1 2の支持領域 1 4上に載置する。 力、くすると、 支持領 域 1 4に埋設された磁石 2 0によって支持領域 1 4力く部分的に磁ィヒされている故 に、 半導体ゥエーハ 2の表面に貼着された、 磁性を有するテープ 1 0力^ 従って 半導体ゥェ一ハ 2が支持基板 1 2の支持領域 1 4上に磁気的に吸着される。 図 1乃至図 3と共に図 4を参照して説明を続けると、 半導体ゥェ一ハ 2の裏面 の研削に使用される研削機、 例えば株式会社ディスコから商品名 「D F G 8 4 1 」 として販売されている研削機には、 チャック手段 2 2が配設されている。 チヤ ック手段 2 2は円板形状の多孔性中央部材 2 4とこの中央部材 2 4を囲繞する環 状ケ一シング 2 6とを有する。 環状ケーシング 2 6内に固定されている中央部材 2 4の外径は支持基板 1 2における支持領域 1 4の外径、 従って半導体ゥェ一ハ 2の外径に対応しており、 環状ケ一シング 2 6の外径は支持基板 1 2における枠 1 6の外径に対応せしめられている。 中央部材 2 4と環状ケ一シング 2 6の上面 とは同一平面をなす。 図 4に明確に図示する如く、 支持領域 1 4上に半導体ゥェ —ハ 2を磁気的に吸着している支持基板 1 2は、 その支持領域 1 4を中央部材 2 4に整合せしめてチヤク手段 2 2上に載置される。 チャック手段 2 2の中央部材 2 4は適宜の吸引路を介して真空源 （図示していない） に連通せしめられており 、 真空源が作動せしめられると、 チャック手段 2 2の中央部材 2 4及び支持基板 1 2の支持領域 1 4を通して大気が吸引され、 チャック手段 2 2の中央部材 2 4 上に半導体'ゥェ一ハ 2が吸引され充分強固に固着される。半導体ゥェ一ハ 2の上 方に露呈されている裏面が研削手段 2 8の作用によって研削され、 半導体ゥェ一 ハ 2の裏面が研削される。 研削手段 2 8はその下面にダイャモンド砥粒を含有し た研削具を有する環状研削工具から構成されている。 半導体ゥエーハ 2の裏面を 研削する際には、 半導体ゥェ一ハ 2を保持したチャック手段 2 2がその中心軸線 を中心として回転せしめられると共に、 研削手段 2 8がその中心軸線と中心とし て回転せしめられ、 そして研削手段 2 8力半導体ゥェ一ハ 2の裏面に押圧せしめ れ《3。 半導体ゥェーハ 2の裏面を所要とおりに研削した後においては、 真空源の作用 を停止せしめて、 チャック手段 2 2の吸引作用を解除し、 支持基板 1 2及びこれ に磁気的に吸着されている半導体ゥェ一ハ 2をチャック手段 2 2上から離脱せし めて所要場所、 例えばカセット容器内に搬送する。 半導体ゥェ一ハ 2が支持基板 1 2上に吸着されている状態においては、 支持基板 1 2の適宜の部位、 例えば枠 1 6、 を把持して支持基板 1 2及びこれに吸着されている半導体ゥェ一ハ 2を搬 送することができる。 従って、 半導体ゥェ一ハ 2の厚さが著しく低減され、 半導 体ゥエーハ 2の剛性が著しく低減された場合でも、 半導体ゥェ一ハ 2を損傷せし めることなく所要とおりに搬送することができる。 半導体ゥェ一ハ 2はその表面 に貼着されているテープ 1 0が磁気的に吸着されることによって支持基板 1 2の 支持領域 1 4上に吸着されている故に、 支持基板 1 2から半導体ゥェ一ハ 2を離 脱せしめる際には、 比較的小さい力によって支持基板 1 2上から半導体ゥエー八 2を充分容易に離脱せしめることができる。 図示の実施形態においては、 支持基板 1 2における支持領域 1 4を形成してい る多孔性材料中に複数個の磁石 2 0を分散せしめて支持領域 1 4を部分的に磁ィ匕 している力 所望ならば、 支持領域 1 4を形成する多孔性材料の全体に渡って磁 石粉を混在せしめて支持領域 1 4を全体的に磁化する、 或いは支持領域 1 4の全 体を磁ィヒされた多孔性材料から形成して支持領域 1 4を全体的に磁化することも できる。 更に、 所望ならば、 半導体ゥエーハ 2の表面に貼着するテープ 1 0として、 少 なくとも部分的に磁化された磁ィヒテープを使用することもできる。 磁化テープの 典型例としては、 ポリオレフインフィルム又はシートの如き剛性が比較的低い合 成樹脂フィルム又はシ一卜の表面及び Z又裏面に磁石粉を塗布したテープを挙げ ることができる。 半導体ゥエーハ 2の表面に貼着されるテープ 1 0が磁ィ匕テープ である場合には、 支持基板 1 2の支持領域 1 4を磁ィ匕する必要はなく、 支持領域 1 4を少なくとも部分的に磁性材料から形成すれば、 支持基板 1 2の支持領域 1 4上に磁化テープ 1 0を、 従って表面に磁ィ匕テープ 1 0が貼着された半導体ゥェ 2を磁気的に吸着することができる。 FIG. 1 is a perspective view showing a semiconductor wafer as a typical example of a thin plate workpiece. FIG. 2 is a perspective view showing a preferred embodiment of a support substrate configured according to the present invention. FIG. 3 is a perspective view showing a state in which the semiconductor wafer of FIG. 1 is turned upside down and adsorbed on the support substrate of FIG. 2; FIG. 4 is a cross-sectional view showing a state where the semiconductor wafer adsorbed on the support substrate is held on a chuck means of a grinding machine and the back surface of the semiconductor wafer is ground. BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, preferred embodiments of a support substrate configured according to the present invention will be described in more detail with reference to the accompanying drawings. FIG. 1 illustrates a semiconductor wafer 2 which is a typical example of a thin plate workpiece. Figure The semiconductor wafer 2 shown has a shape in which a straight edge 4 called an orientation flat is formed in a part of a disk shape, and a large number of rectangular areas are formed on the surface thereof by streets 6 arranged in a grid. 8 are sectioned. Each of the rectangular regions 8 is provided with a semiconductor circuit. When the thickness of the semiconductor wafer 2 is reduced by grinding the back surface of the semiconductor wafer 2, a tape is applied to the surface of the semiconductor wafer 2 to protect the semiconductor circuit provided in the rectangular area 8. 10 is stuck. In the illustrated embodiment, as the tape 10, a magnetic powder is applied to the front and Z or back surfaces of a synthetic resin film or a sheet having relatively low rigidity such as a polyolefin film or a sheet to impart magnetic properties. Magnetic tape is used. Such a tape 10 is affixed to the surface of the semiconductor wafer 2 through a well-known adhesive whose adhesiveness is reduced or reduced by irradiating ultraviolet rays or by heating and hardening. It is very convenient. When separating the semiconductor chip 2 from the tape 10 after separating the semiconductor wafer 2 individually along the street 6 into a plurality of semiconductor chips, the tape 10 is irradiated with ultraviolet rays or the tape 10 is irradiated. To reduce or eliminate the adhesiveness of the adhesive. FIG. 2 illustrates a preferred embodiment of a support substrate constructed according to the present invention. The illustrated support substrate 12 has a disk shape as a whole, and includes a support region 14 located at the center thereof and a frame 16 surrounding the support region 14. The support region 14 has a shape corresponding to the shape of the semiconductor wafer 2 and has a straight edge 18 corresponding to the straight edge 4 of the semiconductor wafer 2. It is important that the support region 14 is formed from a porous material. Preferable examples of the porous material forming the support region 14 include a porous ceramic. In the illustrated embodiment, a plurality (six in the illustrated case) of magnets 20 are dispersedly embedded in the porous material forming the support region 14. Thus, due to the presence of magnet 20, support region 14 is partially magnetized. The frame 16 of the support substrate 12 can be formed from a suitable synthetic resin or a suitable metal such as stainless steel. The support region 14 and the frame 16 surrounding it are connected sufficiently firmly. Conveniently, the upper surface of the support region 14 and the upper surface of the frame 16 are flush with each other, and also the back surface of the support region 14 and the frame 16 It is convenient to make the back surface of the same plane. When grinding the back surface of the semiconductor wafer 2, as shown in FIG. 3, the semiconductor wafer 2 having the tape 10 adhered to the front surface is oriented with the front surface facing downward, that is, Is reversed and placed on the support area 14 of the support substrate 12. When the force is applied, since the support area 14 is partially magnetized by the magnet 20 buried in the support area 14, it has a magnetic property attached to the surface of the semiconductor wafer 2. Accordingly, the semiconductor wafer 2 is magnetically attracted onto the support region 14 of the support substrate 12. Referring to FIG. 4 together with FIGS. 1 to 3, a grinding machine used for grinding the back surface of the semiconductor wafer 2, for example, sold under the trade name “DFG841” by Disco Corporation. In such a grinding machine, chuck means 22 are provided. The checking means 22 has a disk-shaped porous central member 24 and an annular casing 26 surrounding the central member 24. The outer diameter of the central member 24 fixed in the annular casing 26 corresponds to the outer diameter of the support region 14 in the support substrate 12 and therefore the outer diameter of the semiconductor wafer 2. The outer diameter of the thing 26 is made to correspond to the outer diameter of the frame 16 in the support substrate 12. The center member 24 and the upper surface of the annular casing 26 are flush with each other. As clearly shown in FIG. 4, the support substrate 12 which magnetically adsorbs the semiconductor wafer 2 on the support region 14 is aligned with the support region 14 to the central member 24 and is chucked. Means 22 are placed on. The central member 24 of the chuck means 22 is communicated with a vacuum source (not shown) via an appropriate suction path. When the vacuum source is operated, the central member 24 of the chuck means 22 and The atmosphere is sucked through the support region 14 of the support substrate 12, and the semiconductor wafer 2 is sucked on the central member 24 of the chucking means 22 and is fixed firmly and sufficiently. The back surface exposed above the semiconductor wafer 2 is ground by the action of the grinding means 28, and the back surface of the semiconductor wafer 2 is ground. The grinding means 28 is constituted by an annular grinding tool having a grinding tool containing diamond abrasive grains on its lower surface. When grinding the back surface of the semiconductor wafer 2, the chucking means 22 holding the semiconductor wafer 2 is rotated about its central axis, and the grinding means 28 is rotated about its central axis. The grinding means 28 is pressed against the back surface of the semiconductor wafer 2 << 3. After the back surface of the semiconductor wafer 2 is ground as required, the operation of the vacuum source is stopped, the suction operation of the chuck means 22 is released, and the support substrate 12 and the semiconductor magnetically attracted to the support substrate 12 are released. The wafer 2 is detached from the chuck means 22 and transported to a required place, for example, a cassette container. In a state where the semiconductor wafer 2 is adsorbed on the support substrate 12, an appropriate portion of the support substrate 12, for example, a frame 16, is gripped and is adsorbed on the support substrate 12. The semiconductor wafer 2 can be transported. Therefore, even if the thickness of the semiconductor wafer 2 is significantly reduced and the rigidity of the semiconductor wafer 2 is significantly reduced, the semiconductor wafer 2 is transported as required without being damaged. be able to. Since the semiconductor wafer 2 is attracted onto the support region 14 of the support substrate 12 by magnetically attracting the tape 10 attached to the surface thereof, the semiconductor wafer 2 is separated from the support substrate 12 by the semiconductor wafer. When detaching the wafer 2, the semiconductor layer 82 can be detached from the support substrate 12 easily and sufficiently with a relatively small force. In the illustrated embodiment, a plurality of magnets 20 are dispersed in the porous material forming the support region 14 in the support substrate 12, and the support region 14 is partially magnetized. Force If desired, magnetite powder is mixed throughout the porous material forming the support region 14 to magnetize the support region 14 entirely, or the entire support region 14 is magnetized. The support region 14 may be entirely magnetized by being formed from a porous material. Further, if desired, at least a partially magnetized magnetic tape can be used as the tape 10 to be adhered to the surface of the semiconductor wafer 2. Typical examples of the magnetized tape include a synthetic resin film having relatively low rigidity such as a polyolefin film or a sheet, or a tape in which magnet powder is applied to the front surface, the Z surface, or the back surface of a sheet. Tape 10 attached to the surface of semiconductor wafer 2 is magnetic tape In this case, it is not necessary to magnetize the support region 14 of the support substrate 12, and if the support region 14 is formed at least partially from a magnetic material, the support region 14 of the support substrate 12 can be formed. The magnetic tape 10 can be magnetically attracted to the magnetic tape 10, and the semiconductor layer 2 having the magnetic tape 10 adhered to the surface thereof can be magnetically attracted.

Claims

請求の範囲 The scope of the claims
1 . 片面に磁性テープが貼着された薄板状被加工物のための支持基板にして、 少なくとも部分的に多孔性材料から形成され且つ少なくとも部分的に磁化されて 、る支持領域を含む、 ことを特徵とする支持基板。 1. A support substrate for a laminar workpiece having a magnetic tape affixed to one side, including a support region at least partially formed of a porous material and at least partially magnetized. Support substrate.
2 . 該支持領域は分散された複数個の磁石を含有する多孔性材料から形成され ている、 請求項 1記載の支持基板。 2. The support substrate according to claim 1, wherein the support region is formed of a porous material containing a plurality of dispersed magnets.
3 . 該支持領域は磁化された多孔性材料から形成されている、 請求項 1記載の 支持基板。 3. The support substrate according to claim 1, wherein the support region is formed from a magnetized porous material.
4 . 該支持領域を囲繞する枠を含む、 請求項 1記載の支持基板。 4. The support substrate according to claim 1, further comprising a frame surrounding the support region.
5 . 片面に磁ィ匕テープ力《貼着された薄板状被加工物のための支持基板にして、 少なくとも部分的に多孔性材料から形成され且つ少なくとも部分的に磁性である 支持領域を含む、 ことを特徴とする支持基板。 5. A support substrate for a laminar workpiece having one side adhered to the magnetic tape, including a support region at least partially formed of a porous material and at least partially magnetic. A support substrate, characterized in that:
6 . 該支持領域は多孔性且つ磁性材料から形成されている、 請求項 5記載の支 6. The support according to claim 5, wherein the support region is formed of a porous and magnetic material.
7 . 該支持領域を囲繞する枠を含む、 請求項 5記載の支持基板。 7. The support substrate according to claim 5, comprising a frame surrounding the support region.
PCT/JP2002/012978 2001-12-21 2002-12-11 Support substrate for thin-sheet work WO2003054943A1 (en)

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US10/467,889 US20040072520A1 (en) 2001-12-21 2002-12-11 Support substrate for thin-sheet work
AU2002354178A AU2002354178A1 (en) 2001-12-21 2002-12-11 Support substrate for thin-sheet work

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JP2001390114A JP2003197584A (en) 2001-12-21 2001-12-21 Supporting base for thin plate processing work
JP2001-390114 2001-12-21

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US20040072520A1 (en) 2004-04-15
TW200301537A (en) 2003-07-01
AU2002354178A1 (en) 2003-07-09

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