WO2003046987A1 - Appareil a semi-conducteurs, procede de fabrication, et appareil a semi-conducteurs de type lamine tridimensionnel - Google Patents

Appareil a semi-conducteurs, procede de fabrication, et appareil a semi-conducteurs de type lamine tridimensionnel Download PDF

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Publication number
WO2003046987A1
WO2003046987A1 PCT/JP2002/012362 JP0212362W WO03046987A1 WO 2003046987 A1 WO2003046987 A1 WO 2003046987A1 JP 0212362 W JP0212362 W JP 0212362W WO 03046987 A1 WO03046987 A1 WO 03046987A1
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WIPO (PCT)
Prior art keywords
semiconductor device
wiring pattern
face
laminated type
unit
Prior art date
Application number
PCT/JP2002/012362
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English (en)
Japanese (ja)
Inventor
Takao Yamazaki
Tadanori Simoto
Sakae Kitajo
Yuzo Simada
Original Assignee
Nec Corporation
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Filing date
Publication date
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Publication of WO2003046987A1 publication Critical patent/WO2003046987A1/fr

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  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

L'invention concerne un appareil à semi-conducteurs permettant d'augmenter la capacité de mémoire avec des puces à semi-conducteurs de tailles et/ou types différents, et d'éviter une réduction du rendement due à des dégâts ou similaires d'une puce à semi-conducteurs lors de la manipulation, un appareil à semi-conducteurs de type laminé tridimensionnel pouvant ainsi être fabriqué simplement avec un boîtier de petite taille. L'appareil à semi-conducteurs selon l'invention (14) comporte une puce à semi-conducteurs (11) présentant une électrode de puce, un motif de câblage (16) destiné au montage de l'électrode de puce sur un côté, des résines moulées (12, 17) couvrant entièrement la puce à semi-conducteurs (11) et le motif de câblage (16), ainsi qu'une prise d'interconnexion (18) dont une extrémité met en contact un côté du motif de câblage (16), et l'autre extrémité fait saillie par rapport aux résines moulées, l'autre côté du motif de câblage (16) étant exposé à la surface des résines moulées.
PCT/JP2002/012362 2001-11-27 2002-11-27 Appareil a semi-conducteurs, procede de fabrication, et appareil a semi-conducteurs de type lamine tridimensionnel WO2003046987A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-361366 2001-11-27
JP2001361366A JP2003163324A (ja) 2001-11-27 2001-11-27 ユニット半導体装置及びその製造方法並びに3次元積層型半導体装置

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WO2003046987A1 true WO2003046987A1 (fr) 2003-06-05

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JP (1) JP2003163324A (fr)
WO (1) WO2003046987A1 (fr)

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TWI520213B (zh) 2009-10-27 2016-02-01 英維瑟斯公司 加成法製程之選擇性晶粒電絕緣
TWI544604B (zh) 2009-11-04 2016-08-01 英維瑟斯公司 具有降低應力電互連的堆疊晶粒總成
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