Classifications

• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
  • H05B33/00—Electroluminescent light sources
  • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C14/14—Metallic material, boron or silicon
  • C23C14/20—Metallic material, boron or silicon on organic substrates
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/24—Vacuum evaporation
  • C23C14/28—Vacuum evaporation by wave energy or particle radiation
  • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
  • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
  • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
  • H01J2237/02—Details
  • H01J2237/026—Shields
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
  • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
  • H10K71/60—Forming conductive regions or layers, e.g. electrodes

Definitions

• the present invention relates to an inorganic material evaporation apparatus, and more particularly to an evaporation apparatus for forming an inorganic layer such as a metal layer or an insulating layer on an organic layer.
• Flat panel display devices can be classified into an organic display device and an inorganic display device according to the main material used for its display operation.
• the representative examples of the organic display devices include a liquid crystal display (LCD) device and an organic light-emitting device (OLED) such as an organic electroluminescent device.
• the OLED has a response speed faster by 30,000 times than that of the LCD device.
• the OLED has also advantages of a wide viewing angle and a high brightness. Thus, a motion picture can be more naturally displayed with the OLED.
• the OLED is a self light-emitting device, a backlight is not required for its operation.
• anode 11 of a transparent material such as ITO (Indium Tin Oxide) is formed on a substrate 10. Since a conventional photolithography and an etching process cannot be used for pattering an organic layer, separators 12 are formed on the anode 11 with a predetermined pattern. Then one or more organic layer 13 is deposited on the entire surface of the substrate 10 on which the separators 12 are formed.
• the one or more organic layer 13 may include an electron transporting layer, a hole transporting layer and a light-emitting layer, and if necessary, may further include an electron injecting layer and a hole injecting layer.
• the light-emitting layer radiates red(R), green(G) and blue(B) lights according to the material forming the light-emitting layer by the recombination of the electrons and the holes.
• a metal having a low work function such as aluminum or aluminum alloy is deposited to form a cathode 14.
• an encapsulating layer 15 is formed to cover the entire surface of the substrate 10. In this case, the encapsulating layer 15 and the substrate 10 are sealed with sealants 16.
• the cathode 14 is formed by evaporating and depositing a metal at the temperature of about 450 ° C to 1200 ° C .
• the evaporation temperature for forming the organic layer 13 is less than 400 ° C .
• the decomposition of the organic layer 13 will be explained in more detail with reference to Fig. 2 showing a conventional metal evaporation apparatus.
• the conventional evaporation apparatus 20 includes a vacuum chamber 21 to which a gas supply system 22 and a gas evacuating system 23 are mounted.
• the gas supply system 22 includes a container 18 containing an inert gas
• the gas evacuating system 23 includes a vacuum pump 25 for evacuating the vacuum chamber 21.
• the vacuum chamber 21 includes a crucible 26 containing a metal source 34 at lower part of the chamber 21 , an electron beam source 27 for radiating an electron beam 28, a substrate shutter 32 for opening or closing a substrate 29, and a substrate holder 30 for fixating the substrate 29 in the vacuum chamber 21.
• the substrate 29 on which a metal is deposited is positioned on an upper part of the vacuum chamber 21 , and a cooling pipe 31 is installed on the substrate holder 30 to maintain the temperature of the substrate 29 at about 80 ° C during the metal evaporation process.
• the vacuum pump 25 evacuates the vacuum chamber 21 to a high vacuum state, and the substrate 29 on which the organic layer 13 is previously formed is introduced into the vacuum chamber 21.
• the metal source 34 for forming the cathode 14 (See Fig. 1 E), for example, Mg, Mg.Ag, AI.Li, LiF/AI or Al alloy is located in the crucible 26. Then, the substrate shutter 32 is outwardly shifted so that the substrate 29 directly faces the metal source 34, and the electron beam 28 of high energy is emitted from the electron beam source 27. The electron beams 28 impact the molten metal source 34 within the crucible 26, and the molten metal source 34 is transformed into a vapor state metal. The metal vapor is discharged from the crucible 26 and deposited on the surface of substrate 29, thereby forming the cathode 14.
• the electron beam of high energy impacts the molten metal source 34
• soft X-ray and heat are generated by the impact.
• the electron beam 28 emitted from the electron beam source 27 produce a current flowing to the substrate 29.
• secondary electrons generated from the impact of the electron beam 28 emitted from the electron beam source 27 onto the molten metal source 34, backscattering electrons and thermionic electrons are produced.
• the soft X-ray, radiant heat, secondary electrons, backscattering electrons and thermionic electrons may decompose or crystallize the organic material forming the organic layer 13(See Fig.1 ) which is formed on the substrate 29, which results in the deterioration of the organic layer 13.
• the decomposition of the material forming the organic layer 13 results in the changes of the luminescent efficiency or the electron/hole transporting properties of the organic layer 13, and eventually decreases the brightness, the luminescent efficiency and the current density of the OLED.
• the metal source 34 can be ionized, and the ionized metal is energized by the magnetic and electric field produced by the electron beam source 27.
• the ionized and energized metal vapor impacts onto the electron beam source 27 and the crucible 26 in the vacuum chamber 21 , and the particles sputtered from the electron beam source 27 and the crucible 26 can be co-deposited to the substrate 90 with the metal source 34. That is, alien metals besides the metal source 34 are co-deposited on the substrate 29 to form the cathode 14, thereby the work function of the cathode 14 is changed and the electron/hole recombination properties of OLED can also be changed.
• the electron beam source 27 can also be used to deposit the encapsulating layer 15 made of an inorganic material to protect the OLED from external moisture and oxygen.
• the evaporation temperature of the inorganic and insulating material for forming the encapsulating layer 15 is higher than that of the organic materials for forming the organic layer 13. Thus, the organic layer 13 can be damaged when depositing and forming the encapsulating layer 15.
• the present invention provides an inorganic material evaporation apparatus comprising a vacuum chamber, an electron beam source installed in the vacuum chamber for emitting electron beam, a crucible installed in the vacuum chamber for containing an inorganic evaporation target, a substrate holder installed in the vacuum chamber for fixating a substrate which is introduced into the vacuum chamber and on which one or more organic layer is formed, and a shielding roof positioned between the electron beam source and the substrate holder.
• the shielding roof has an opening under which the evaporation target is located, and is made of X-ray transmission-resistant material.
• the shielding roof is preferably made of metal or ceramic, and more preferably is made of lead.
• the present invention also provides an inorganic material evaporation apparatus comprising a vacuum chamber, an electron beam source installed in the vacuum chamber for emitting electron beam, a crucible installed in the vacuum chamber for containing an inorganic evaporation target, a substrate holder installed in the vacuum chamber for fixating a substrate which is introduced into the vacuum chamber and on which one or more organic layer is formed; and a magnetic field generator for generating magnetic field in a space between the crucible and the substrate holder.
• the present invention further provides an apparatus for manufacturing an organic display device comprising: a loading/unloading chamber in which a plurality of substrates are loaded; an organic deposition chamber for forming an organic layer on the substrate; an inorganic deposition chamber for forming an inorganic layer on the organic layer; a heat treatment chamber for heat-treating the substrate on which the organic layer and the inorganic layer are formed; and a transfer chamber for transferring the substrate among the a loading/unloading chamber, the organic deposition chamber, the inorganic deposition chamber, and the heat chamber, wherein a convection oven is equipped in the heat treatment chamber.
• Figs. 1A-1 E are drawings for illustrating each steps of producing a conventional OLED
• Fig. 2 is a schematic diagram of an evaporation apparatus for depositing an inorganic layer of an OLED according to a conventional art
• Fig. 3A is a schematic diagram of an evaporation apparatus for depositing an inorganic layer of an OLED according to an embodiment of the present invention
• Fig. 3B is a schematic diagram of an evaporation apparatus for depositing an inorganic layer of an OLED according to other embodiment of the present invention.
• Fig. 3C is a schematic diagram of a chamber system including the evaporation apparatus according to an embodiment of the present invention.
• Figs. 4A - 4C are graphs for illustrating the effect of the shielding roof and/or the magnetic field generator equipped in the evaporation apparatus according to an embodiment of the present invention.
• Figs. 5A - 5C are graphs for illustrating the effect of the heat-treatment for recovering the organic layer decomposed during the evaporation process of an inorganic material according to an embodiment of the present invention.
• FIGs. 3A and 3B are schematic diagrams of the evaporation apparatus for depositing an inorganic layer such as the metal layer or the encapsulating layer of an OLED according to the embodiments of the present invention.
• the evaporation apparatus 60, 90 includes a vacuum chamber 61 to which a gas supply system 70 and a gas evacuating system 80 are mounted.
• the gas supply system 70 includes a gas pipe 74, a mass flow controller (MFC) 73, a gas container 71 and two valves 72a, 72b, and the gas evacuating system 80 includes a vacuum pump 82.
• the gas pipe 74 has a gas inlet 75 for supplying gas into the vacuum chamber 61 , the MFC 73 is connected to the two valves 72a, 72b, and the gas container 71 is connected to the valve 72b and filled with inert gas such as nitrogen gas, argon gas or the like.
• the vacuum chamber 61 At the lower part of the vacuum chamber 61 is installed an electron beam source 67 for emitting electron beam 68, and at one side of the electron beam source 67 is installed a crucible 66 containing molten metal or insulating material source 69 (hereinafter, "evaporation target").
• the vacuum chamber 61 also includes a substrate holder 63 for fixating the substrate 62 introduced therein, and a substrate shutter 65 is disposed between the substrate holder 63 and the electron beam source 67.
• the cooling pipe 64 in the substrate holder 63 is a conventional element and has the function as described with reference to Fig. 2.
• the evaporation apparatus 60, 90 in Figs. 3A and 3B according to the present invention further includes the shielding roof 91 , the magnetic field generator 98, 98' and/or the curing panel 93 installed between the electron beam source 67 and the substrate shutter 65 compared to the conventional evaporation apparatus 20 shown in Fig. 2.
• the shielding roof 91 is positioned so that the electron beam 68 emitted from the electron beam source 67 could not reach to the shielding roof 91 , and has an opening 92 under which the evaporation target 69 is located.
• the shielding roof 91 is depicted to have a flat form, but the shape of the shielding roof 91 is not limited thereto, and, for example, can have a curved form.
• the shielding roof 91 is made of X-ray transmission-resistant material such as metal or ceramic having a high density, and preferably made of lead (Pb). The X- ray cut-off property of the X-ray transmission-resistant material depends on the thickness thereof.
• the shielding roof 91 may be made of a photographic film attached to the metal or ceramic having a high density.
• X-ray is an electromagnetic wave generated when electrons of a high energy impacts a metal target at high temperature.
• the electron beam 68 from the electron beam source 67 impacts the evaporation target (molten metal source) 69 to produce soft X-ray.
• the soft X-ray reaches the one or more organic layer, for example, a hole injecting layer, a hole transporting layer, a light-emitting layer, an electron injecting layer and an electron transporting layer formed on the substrate 62, the material forming the organic layer can be ionized, and the atomic/molecular structure of the organic layer can be deformed.
• the one or more organic layer for example, a hole injecting layer, a hole transporting layer, a light-emitting layer, an electron injecting layer and an electron transporting layer formed on the substrate 62
• the shielding roof 91 cuts off the soft X-ray projected to the substrate 62 from the evaporation target (molten metal source) 69.
• the properties of the organic layer can be maintained, and thereby the luminescent efficiency, the quantum efficiency, and the brightness of the OLED can be maintained.
• the ionized and energized metal vapor produced from the evaporation target (molten metal source) 69 may impinge against the electron beam source 67 and the crucible 69 to produce sputtered impurity particles.
• the sputtered particles are deposited on the shielding roof 91 rather than the substrate 62.
• the electron beam 68 impacts the evaporation target 69 in the crucible 66, heat and radiant heat are produced by the impact.
• the radiant heat is projected to the substrate 62 which is maintained at a relatively low temperature of about 80 ° C by the cooling pipe 64.
• the organic layer formed on the substrate 62 absorbs additional heat energy, and thereby its structure can be deformed and a part of the layer can be vaporized.
• the shielding roof 91 is positioned between the substrate 62 and the evaporation target 69 to absorb the radiant heat. If the temperature of the shielding roof 91 is raised too much, the shielding roof 91 can be a source of other radiant heat.
• a cooling panel 95 can be provided on a surface of the shielding roof 91 , which faces the substrate 62.
• the shielding roof 91 is preferably made of a material having a low thermal conductivity. If the thermal conductivity of the shielding roof 91 is very low, the cooling panel 95 might be not required for cooling the shielding roof 91.
• the cooling panel 95 is made of an X-ray transmission-resistant material such as a high-density metal or ceramic, the cut-off effect of the X-ray produced from the evaporation target 69 can be further increased.
• the magnetic field generator for producing magnetic field in a space between the electron beam source 67 and the substrate 62.
• the magnetic field generator can be a permanent magnet 98 as shown in Fig. 3A or can be a solenoid 98' consisting of a cylinder 97 of an electrically insulating and magnetically non-magnetic material and copper wire 96 wiring the cylinder 97 as shown in Fig. 3B.
• the permanent magnet 98 having N pole and S pole may have a flat plane shape or a curved shape, and formed along the inner wall of the vacuum chamber 61.
• the direction of the magnetic field produced by the permanent magnet 98 is positive X-direction which is parallel to the substrate 62.
• the secondary electrons move in all directions, namely, in ⁇ X, ⁇ Y and ⁇ Z directions, but the secondary electrons in the magnetic field of ⁇ X-direction are under circular movement in the ⁇ Y and ⁇ Z planes according to the Fleming's right-hand rule. Accordingly, the deformation of the organic layer formed on the substrate 62 due to the secondary electrons can be prevented.
• the cylinder 97 of the solenoid 98' has openings along the ⁇ Y axis, and the intensity of the magnetic field produced by the solenoid 98' is determined by the number of the copper wire 96. If the wire 96 is wound clockwisely, the direction of the magnetic field generated by the solenoid 98' is the positive Y-direction which is perpendicular to the substrate 62. Then the secondary electrons entered into the magnetic field change its direction of movement, and are under circular movement in the ⁇ X and ⁇ Z planes according to the Fleming's right-hand rule. Accordingly, the secondary electrons move in plane of ⁇ X and ⁇ Z axis and do not projected to the substrate 62.
• the cut-off of the secondary electrons is described when the directions of the magnetic field are the positive X and positive Y directions.
• the motion track of the secondary electrons will be changed even in the magnetic field of negative X, negative Y, and ⁇ Z directions, and the secondary electrons cannot reach to the substrate 62.
• a Helmholtz coil consisting of a pair of solenoid or an electromagnet having a cooling system can be employed, which is well known to the skilled person in the electric and magnetic industry.
• the damage of the organic layer formed on the substrate 62 can be considerably prevented by the magnetic field generator 98, 98'.
• the direction of the magnetic field is the positive Y-direction
• the secondary electrons moving in the positive Y-direction are projected toward the substrate 62 regardless of the magnetic field.
• the shielding roof 91 and the cooling panel 95 nearly cut off the soft X-ray and the radiant heat, the cut off cannot be perfectly performed.
• the organic layer formed on the substrate 62 can be damaged by the residual soft X-ray and the radiant heat.
• a curing panel 93 is further provided in the evaporation apparatus 60, 90 in order to recover the decomposed organic layer.
• the curing panel 93 is for heat-treating the substrate 62 on which an inorganic layer and an organic layer are formed, and a convection oven in the inert gas such as nitrogen gas can be used as the curing panel 93.
• the curing panel 93 is operated, and the inert gas is convected in the vacuum chamber 61 to heat-treat the substrate 62. Temperature range of the heat-treatment can be determined so that the glass substrate 62, various inorganic layers and organic layers thereon are not damaged.
• the preferable heat-treatment temperature is from about 40- 70 ° C
• the preferable heat-treatment time is from about 30 - 60 minutes. If the temperature is less than 40 ° C , the heat-treatment time would be longer. If the temperature is more than 70 ° C , black spots can be formed in the organic layer deposited on the substrate 29, which reduces the life time of the organic layer.
• the gas supply system 70 and the curing panel 93 are independently provided.
• the MFC 73 of the gas supply system 70 is designed to control the flow speed and the temperature of the inert gas according to the progress of the evaporation process, the heat-treatment of the organic layer after depositing the inorganic layer can be carried out without the curing panel 93.
• a separate heat treatment chamber 114 can be used for the heat treatment as shown in Fig. 3C.
• the heat treatment chamber 114 includes a convection oven (not shown) in the inert gas such as nitrogen gas.
• the metal layer and the encapsulating layer are respectively deposited on the substrate in the deposition chamber 112 and the encapsulation chamber 116.
• the deposition chamber 112 and the encapsulation chamber 116 can be the evaporation apparatus shown in Figs 3a or 3b without the curing panel 93.
• the deposited substrate is transferred to the heat treatment chamber 114 through a transfer chamber 102, and then the convection oven in the heat treatment chamber 114 is operated to heat-treat the substrate.
• the reference numeral 104 stands for a loading/unloading chamber having a cassette in which glass substrates and metal shadow masks are installed.
• the reference numeral 106 represents a pre-treatment chamber for cleaning the substrate and a transparent anode, and for improving the work function of the anode to the level of a hole transporting layer.
• the reference numeral 108 represents a first process chamber for forming the hole injecting layer, a hole transporting layer and/or a hole blocking layer.
• the reference numeral 110 represents a second process chamber for forming R, G, B organic light-emitting layers.
• the deposition chamber 112 is a third process chamber for forming an electron injecting layer and a metal layer as a cathode
• the encapsulation chamber 116 is a chamber for forming the encapsulating layer on the cathode to prevent the external moisture and oxygen.
• the reference numeral 102 stands for the transfer chamber in which a robot arm is installed for transferring the substrate to the above-identified chambers 104, 106, 108, 110, 112, 116.
• the heat treatment process can be carried out with a conventional evaporation apparatus in which the shielding roof 91 and the various magnetic field generator 98, 98' are not provided.
• Figs. 4A - 4C and Figs. 5A - 5C show the effects of the shielding roof 91 , the magnetic field generator 98 and the curing panel 93 equipped in the evaporation apparatus according to the present invention.
• the current density between the anode and the cathode, the brightness, and the luminescent efficiency of an OLED according to the voltage applied between the anode and the cathode (metal layer) are shown in Figs. 4A - 4C, respectively.
• the cathode is an aluminum metal layer, and the OLED includes the hole injecting layer, the hole transporting layer, the organic light-emitting layer, the electron transporting layer and the electron injecting layers disposed between the anode and the cathode.
• the OLED includes the hole injecting layer, the hole transporting layer, the organic light-emitting layer, the electron transporting layer and the electron injecting layers disposed between the anode and the cathode.
• the symbol “A” represents the case in which the shielding roof 91 and the magnetic field generator 98 are not provided in the evaporation apparatus
• the symbol “I” represents the case in which the shielding roof 91 is provided but the magnetic field generator 98 are not provided
• the symbol “I” represents the case in which the shielding roof 91 and the magnetic field generator 98 are provided.
• an applied voltage for obtaining a given current density, brightness and luminescent efficiency can be reduced by producing the OLED with the evaporation apparatus equipped with the magnetic field generator 98 and the shielding roof 91.
• the effects of the heat treatment on the current density between the anode and the cathode, the brightness, and the luminescent efficiency of an OLED are shown in Figs. 5A - 5C, respectively.
• the cathode of the OLED is an aluminum metal layer, and produced with the evaporation apparatus equipped with the magnetic field generator 98 and the shielding roof 91. In Figs.
• the symbol “A” represents the case in which the heat treatment is performed for 1 hour at about 60 ° C after forming the metal layer
• the symbol “I” represents the case in which the heat treatment is performed for 1 hour at about 40 ° C
• the symbol “I” represents the case in which the heat treatment is not carried out.
• the current density, the brightness and the luminescent efficiency are improved as the heat-treatment is carried out.
• an inorganic layer such as a metal layer or an encapsulating layer
• an evaporation apparatus equipped with a magnetic field generator 98 and a shielding roof 91
• the decomposition of the organic layers formed under the inorganic layer can be prevented, and the applied voltage for operating the OLED can be reduced.
• the evaporation apparatus for depositing an inorganic layer on an organic layer includes a magnetic field generator 98, a shielding roof 91 and/or a curing panel 93. Accordingly, the damage of the organic layer during the deposition of the inorganic layer can be prevented, and even if there is a little damage on the organic layer, the organic layer can be sufficiently recovered by the heat treatment with the curing panel. While the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art will appreciate that various modifications and substitutions can be made thereto without departing from the spirit and scope of the present invention as set forth in the appended claims.

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