WO2003041147A1 - Anodic oxidizer, anodic oxidation method - Google Patents
Anodic oxidizer, anodic oxidation method Download PDFInfo
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- WO2003041147A1 WO2003041147A1 PCT/JP2002/011551 JP0211551W WO03041147A1 WO 2003041147 A1 WO2003041147 A1 WO 2003041147A1 JP 0211551 W JP0211551 W JP 0211551W WO 03041147 A1 WO03041147 A1 WO 03041147A1
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- substrate
- processed
- cathode electrode
- lamp
- light
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- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 35
- 230000003647 oxidation Effects 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000007800 oxidant agent Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 claims abstract description 112
- 230000007246 mechanism Effects 0.000 claims abstract description 41
- 239000004020 conductor Substances 0.000 claims abstract description 14
- 238000007743 anodising Methods 0.000 claims description 38
- 239000000126 substance Substances 0.000 claims description 24
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 5
- 230000010355 oscillation Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 230000000737 periodic effect Effects 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 238000012935 Averaging Methods 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910021426 porous silicon Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/12—Etching of semiconducting materials
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/005—Apparatus specially adapted for electrolytic conversion coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Definitions
- the present invention relates to an anodizing apparatus and an anodizing method for performing an electrochemical process using a substrate to be processed as an anode, and more particularly to an anodizing apparatus and an anodizing method suitable for anodizing that performs light irradiation during the process.
- the process of electrochemically anodizing a substrate to be processed is used in various situations.
- the substrate to be processed having a polycrystalline silicon layer formed on its surface is energized to a positive potential electrode of a power supply through a conductor and dissolved in a solvent (eg, ethyl alcohol).
- a solvent eg, ethyl alcohol
- Submerged in acid solution In the hydrofluoric acid solution, that is, in the chemical solution, an electrode made of, for example, platinum is immersed, and a current is supplied to the negative potential electrode of the power supply.
- light is irradiated from a lamp toward the polycrystalline silicon layer of the substrate to be processed immersed in the chemical solution.
- the reaction in the polycrystalline silicon layer in such anodization is described, for example, as follows.
- e + is a hole and e— is an electron.
- this reaction requires a hole as a premise, which is different from mere electropolishing.
- a force source electrode is inevitably located between a lamp for irradiating light and a portion to be processed of a substrate to be processed.
- a force sword electrode first, it is necessary to uniformly oppose the entire surface of the processing target so as to uniformly generate the action on the processing target.
- a grid-like electrode provided with a spread similar to the planar spread of the portion to be processed is used.
- the force sword electrode is present evenly over the entire surface of the portion to be processed and allows light to pass from between the grids to reach the portion to be processed.
- the present invention has been made in view of such circumstances, and in an anodic oxidation apparatus and an anodic oxidation method in which a substrate to be processed is used as an anode to perform an electrochemical process, a portion to be processed of the substrate to be processed is It is an object of the present invention to provide an anodic oxidation apparatus and an anodic oxidation method capable of uniformly irradiating the light, thereby making the anodic oxidation treatment more uniform in the surface of the substrate to be processed.
- an anodic oxidation apparatus includes a lamp that emits light, and a target substrate holding unit that is provided at a position where the emitted light reaches and that can hold a target substrate.
- a cathode electrode provided on the way where the emitted light arrives at the held substrate to be processed, having a conductor portion provided with an opening for allowing the light to pass therethrough and not transmitting the light;
- a vibration mechanism for periodically vibrating a spatial position of the sword electrode, the lamp, or the substrate-to-be-processed holding part (claim 1) (that is, a lamp, a power source electrode, a substrate to be processed).
- the spatial position of at least one of these members is periodically vibrated while maintaining the rough positional relationship between the three members of the substrate holder to be processed. Therefore, the amount of light applied to each portion on the substrate during the time required for the anodizing step is averaged over time and uniformized.
- the anodizing treatment can be made more uniform in the surface of the substrate to be processed.
- the arrangement relationship of the three members includes, in addition to the vertical direction, a case where the three members are arranged in the horizontal direction so as to emit light from the horizontal direction. Furthermore, the irradiation of light onto the substrate to be processed may be guided through reflection, refraction, or the like.
- periodic vibration means displacement sky Means a periodic movement such that the trajectory in the middle does not go out of a certain range,
- the anodizing apparatus includes: a substrate holding portion capable of holding a substrate to be processed; and a wall provided to be connected to the held substrate to be processed and forming a processing tank having an open top.
- a cathode electrode provided between the held substrate to be processed and the lamp unit and having an opening through which light passes, the cathode electrode being positioned relative to the held substrate to be processed;
- a vibrating mechanism for vibrating at a time (claim 2).
- the vibration mechanism radiates the power source electrode, the lamp, the lamp unit, or the substrate holding part to be processed.
- the light is oscillated on a plane substantially perpendicular to the radiation direction of the emitted light (claim 3).
- the position of the generated shadow is temporally changed on the substrate to be processed.
- the vibration mechanism radiates the power source electrode, the lamp, the lamp unit, or the substrate holding part to be processed.
- the light is oscillated on a plane substantially parallel to the emitted direction of the light (claim 4).
- the intensity pattern of the generated shadow is temporally changed on the substrate to be processed.
- the vibration is a reciprocating motion, a circular motion, or an elliptical motion (claim 5). This is because the movement is generated by a simpler mechanism.
- the anodic oxidation device according to claim 4 is provided. Wherein the vibration is a reciprocating motion, a circular motion, or an elliptical motion.
- the force source electrode has a square grid structure in which the conductor has a cross point, and the circular motion is The circular motion of the force source electrode having a radius substantially equal to an odd multiple of half the square distance between the cross points (claim 7).
- the radius of the circular motion is an even multiple of approximately half the square distance between the crosspoints, the crosspoint moves to the adjacent crosspoint due to the motion, and eventually the concentration of the shadow at the crosspoint is reduced. It brings.
- the frequency of the circular motion which is a periodic vibration
- the frequency of the circular motion which is a periodic vibration
- the reciprocating motion of the force sword electrode has an amplitude of approximately an odd multiple of half the diagonal distance between the cross points and is directed in the direction of the diagonal distance (claim 8). This also takes into account that the shadow of the crosspoint is the darkest on the substrate to be processed, and does not create a point where the shadow concentrates due to the movement.
- the above-mentioned reciprocating motion which is a periodic vibration
- Averaging is performed. Therefore, if the integral multiple of the above half cycle is completed in the time required for the anodizing step, an averaging effect can be obtained, but as the integer increases, the meaning of an integer becomes relatively small. However, it is almost the same as when it is a real multiple.
- the force source electrode has a rectangular grid structure in which the conductor has a crosspoint
- the elliptical motion Is the elliptic motion of the force sword electrode whose major axis is an odd multiple of approximately half the long side distance between the cross points and whose minor axis is an odd multiple of approximately half the short side distance between the cross points. (Claim 9). This also takes into account that the shadow of the crosspoint is the darkest on the substrate to be processed, and does not create a point where the shadow concentrates due to motion.
- the frequency of the elliptical motion which is a periodic oscillation
- the frequency of the elliptical motion which is a periodic oscillation
- the force source electrode is a set of plate-like bodies having a main surface substantially parallel to a radiation direction of the emitted light. (Claim 10).
- the anodic oxidation method according to the present invention includes: a step of holding the substrate to be processed in the substrate to be processed holding portion; and a step of bringing the portion to be processed of the held substrate to be processed and the cathode electrode into contact with a chemical solution.
- the method may further include irradiating the processing target with the processing liquid, and irradiating the processing target with light, and providing a lamp unit provided to face the processing target and the processing target.
- the power source electrode having an opening portion through which light is transmitted is vibrated relative to the substrate to be processed (i.e., a lamp, a power source electrode, and a substrate to be processed holding the substrate to be processed).
- the spatial position of at least one of these is periodically vibrated while maintaining the general positional relationship of the three parts, so that the shadow of the force source electrode is temporally shifted on the substrate to be processed. Therefore, the amount of light irradiation on each part of the substrate to be processed during the time required for the anodizing step is averaged over time and uniformized. To make it more even It becomes possible.
- step S for periodically vibrating the spatial position of the substrate to be processed holding part or the lamp in the force source electrode contacted with the chemical solution, or in that state is in this order. It is not necessary, but rather a step that can overlap in time.
- the force source electrode is vibrated in a plane parallel to the surface of the substrate to be processed, as described above, the position of the generated shadow is temporally changed on the substrate to be processed. The light dose to each part above is averaged over time.
- FIG. 1 is a front view schematically showing an anodic oxidation apparatus according to one embodiment of the present invention.
- FIG. 2 is a plan view of the cathode electrode 13 shown in FIG.
- FIG. 3 is a plan view showing a main part of the force-sword electrode vibration mechanism 19 shown in FIG.
- FIG. 4 is a plan view showing another example of the force source electrode 13 shown in FIG.
- FIG. 5 is a plan view showing a main part of a cathode electrode vibrating mechanism 19 which can be used when the force source electrode 13 1 shown in FIG. 4 is applied to the anodizing apparatus shown in FIG. It is.
- FIGS. 6A and 6B are a plan view (FIG. 6A) and a front view (FIG. 6B) showing still another example of the force source electrode 13 shown in FIG.
- FIG. 7 is a flowchart showing an operation flow of the anodizing apparatus shown in FIG. 1.
- the spatial position of at least one of the lamp, the force source electrode, and the processed substrate holding unit that holds the processed substrate is maintained while maintaining the general three-dimensional relationship. Is periodically vibrated. As a result, the shadow of the force source electrode is dispersed over time on the substrate to be processed. It is averaged and homogenized. Therefore, it is possible to make the anodic oxidation treatment more uniform in the surface of the substrate to be processed.
- FIG. 1 is a front view schematically showing an anodic oxidation apparatus according to one embodiment of the present invention. As shown in the same figure, this anodizing device
- lamp unit 16 having a plurality of cathode electrodes 13, wall portions 15, and lamps 17, lamp unit support member 18, power source electrode vibration mechanism 19, power source electrode vibration mechanism support member 20 Is provided.
- a substrate to be processed 1 (the upper surface is a portion to be processed) is placed and held, and a wall 15 surrounding four sides in the horizontal direction is a stage 11 and a substrate to be processed. It is installed on the periphery of the substrate 12.
- This installation of the wall portion 15 is performed by placing and holding the substrate to be processed 12 on the stage 11 and then lowering the wall portion 15 from above, for example.
- a chemical solution (treatment liquid) 14 is applied in the wall portion 15 with the substrate to be processed 12 as a bottom, so that a contact portion between the wall portion 15 and the substrate to be processed 12 is circumferential.
- a sealing member not shown
- a conductor (not shown) for supplying electricity to the processing target portion of the processing target substrate 12 at the time of the anodic oxidation treatment is provided on the outer periphery of the seal member.
- a processing bath is formed by extending a chemical solution 14 in the wall portion 15 with the substrate 12 to be processed as the bottom.
- the supply of the chemical solution to the treatment layer can be performed by, for example, installing a supply pipe (not shown) into the treatment layer or a supply passage (not shown) penetrating the wall 15.
- a cathode electrode 13 is provided in the processing tank so as to be immersed in the chemical solution 14 and opposed to the substrate 12 to be processed.
- the cathode electrode 13 is suspended from the kaleid electrode vibrating mechanism 19, and can be made to make a circular motion in a horizontal plane by the force source electrode vibrating mechanism 19 ( see the plane configuration of the force source electrode 13). Will be described later.
- the force-sword electrode vibration mechanism 19 is fixed to the wall 15 by a force-sword electrode vibration mechanism support member 20. The main configuration of the cathode electrode vibration mechanism 19 will be described later.
- a lamp unit 16 is provided on the force source electrode 13 of the substrate 12 to be processed, and the irradiation light is incident on the substrate 12 to be processed substantially perpendicularly through the opening of the force source electrode 13. I do.
- the lamp unit 16 is fixed to the wall 15 by a lamp unit support member 18.
- the stage 11 on which the tomb plate 12 to be treated is placed and held, the cathode electrode 13, and the lamp unit 17 are the power source electrodes 13. Vibrates.
- the shadow of the cathode electrode 13 due to the lamp unit 16 is temporally dispersed on the substrate 12 to be processed. Therefore, the amount of light irradiation on each part on the substrate to be processed 12 during the time required for the anodizing step is averaged over time and uniform. Accordingly, it is possible to make the anodic oxidation treatment more uniform in the surface of the substrate to be processed.
- FIG. 2 is a plan view of the cathode electrode 13 shown in FIG. As shown in Fig. 2, this force source electrode is formed in a grid shape with a pitch a1 in both the vertical and horizontal directions, and a cross point 13a exists at each of the vertical and horizontal intersections, and each of the grids is formed.
- An opening between the wires is an opening through which light passes.
- the material of the force source electrode 13 is platinum
- the pitch a1 is about 10 mm
- the thickness of the wire constituting the grid is about 0.5 mm.
- FIG. 3 is a plan view showing a main part of the cathode electrode vibration mechanism 19 shown in FIG. As shown in Fig. 3, the main part includes a vibrating plate 31, a cathode electrode connecting part 32, gears 34, 36, vibrating pins 35, 37, a timing belt 38, a gear 39
- the motor 40 is present.
- the gear 39 is rotated by the motor 40, and its rotational force is the timing belt. It is transmitted to the gear 3 6 by 3 8.
- the gear 36 has a fixed rotating shaft position and is rotatably supported.
- the gear 36 and the vibrating pin 37 are in a relationship in which the vibrating pin 37 is fixed at an eccentric position of the gear 36, and the vibrating pin 37 has a planar circular shape and is formed on the vibrating plate 31. It fits into the provided through hole.
- the vibration pin 37 is slidable with respect to the hole surface of the through hole.
- the relationship between the gear 34 and the vibrating pin 35 is the same as the relationship between the gear 36 and the vibrating pin 37, and the gear 34 has a fixed rotating shaft position and is rotatably supported.
- Reference numeral 35 is fitted in another through hole provided in the vibration plate 31.
- the vibrating pin 35 is slidable with respect to the surface of the through hole. Note that the gear 34 has no force transmitting element for its teeth.
- the cathode electrode 13 is suspended by four force electrode electrode connecting portions 32.
- the eccentricity of the vibrating pin 3 5 (3 7) from the rotation center of the gear 3 4 (3 6) is (al) / 2 as shown in the figure
- the cross point 13 a of the force source electrode 13 is A circular motion is performed so that the position of does not overlap with the position of the adjacent cross point. Therefore, in consideration of the fact that the shadow of the cross point 13a is the darkest on the substrate 12 to be processed, it is possible to prevent a region where the shadow concentrates due to the movement from being made as small as possible.
- the eccentricity may be an odd multiple of (a 1) / 2.
- the grid structure of the force source electrode 13 is described as a square grid structure, and the corresponding main structure of the force source electrode vibration mechanism 19 as shown in FIG. 3 is shown.
- the movement by the force-sword electrode vibration mechanism 19 is preferably an elliptical movement in terms of shadow dispersion efficiency.
- the vibration plate 31 in FIG. 3 may be made to perform an elliptical motion instead of a circular motion.
- One way to do this, for example, is as follows. First, tilt the gears 36 and 34 so that they appear elliptical on the plan view. In this apparent ellipse, the major axis should be in the horizontal direction (or vertical direction) in Fig. 3.
- the relationship between the gear 3 6 (3 4) and the vibrating pin 3 7 (3 5) is not fixed, and the vibrating pin 3 7 (3 5) is rotatable at the root of the vibrating pin 3 7 (3 5), and Support so that the inclination angle can be freely set to the gear side surface (non-tooth surface).
- a restriction function is provided in the through hole of the vibration plate 31 so that the angle at which the vibration pin 37 (35) is fitted to the vibration plate 31 is kept vertical.
- the vibrating pin 3 7 (3 5) makes an elliptical motion, so that an elliptical motion of the vibrating plate 31 is obtained. Therefore, the cathode electrode 13 also makes an elliptical motion.
- a well-known elliptical motion mechanism using an eccentric cam may be used.
- the shadow of the cross point 13a is the darkest on the substrate 12 to be processed.
- the elliptical motion should be made so that the odd diameter of half is the minor axis. The reason for this is Considering the distance to the cross point, it can be considered as in the case of circular motion.
- FIG. 4 is a plan view showing another example of the force source electrode 13 shown in FIG.
- the cathode electrode 13 1 shown in FIG. 4 has a square grid structure (pitch a 2) like the one shown in FIG. 2, but the set angle of the wire is inclined by 45 degrees.
- the same effect as that of the force source electrode 13 shown in FIG. 2 can be obtained by using the cathode electrode vibration mechanism shown in FIG.
- the amount of eccentricity (a 1) / 2 shown in FIG. 3 is more preferably (a 2) / 2 or an odd multiple thereof.
- the force electrode 131 should be a linear reciprocating motion (vertical direction or horizontal direction in the figure) instead of circular motion.
- a temporal dispersion effect of the shadow can be obtained. This is because, when the wire is reciprocated in these directions, the wire is moved avoiding the longitudinal direction of the wire, and the shadow of the wire moves temporally.
- FIG. 5 is a plan view showing a main part of a cathode electrode vibrating mechanism 19 that can be used when applying the force source electrode 13 1 shown in FIG. 4 to the anodizing apparatus shown in FIG. .
- regulating members 51, 52, vibrating plate 53, connecting joint 54, connecting pins 55, 56, motor 57, rotating wheel 58 There is a cathode electrode connecting part 32.
- this mechanism is a kind of Biston-Crank mechanism. ⁇ Since the cathode electrode 13 1 is suspended from the vibrating plate 53 by the force The reciprocating movement of the plate 53 causes the cathode electrode 13 1 to reciprocate.
- the eccentricity of the connecting bin 56 on the rotary wheel 58 is (V "2) (a2) Z2 as shown in the figure, the shadow of the cross-point 1311a is In consideration of the maximum density on 2, the area where the shadow is concentrated by the movement can be prevented from being made as large as possible, that is, the cross-point 13 1 of the cathode electrode 13 1
- the reciprocating motion is performed so that the position of a does not overlap with the position of the adjacent cross point
- the eccentricity of the connecting pin 56 on the rotating wheel 58 is calculated as ("2) (a2) It may be an odd multiple of / 2.
- the force source electrode 13 is moved in a plane perpendicular to the light irradiation direction to temporally change the position of the shadow generated on the substrate 12 to be processed.
- a method in which the force source electrode 13 is moved in a plane substantially parallel to the light irradiation direction is also a possible method.
- the intensity pattern of the shadow generated on the processing target substrate 12 changes with time. Therefore, the light irradiation amount is averaged over time as compared with the case where no force source electrode 13 is moved.
- the force-sword electrode vibration mechanism as shown in Figs. 3 and 5 is rotated 90 degrees around the horizontal axis. What is necessary is just to provide. Further, the force sword electrodes 13 and 13 1 are moved in a plane substantially perpendicular to the light irradiation direction and also in a plane substantially parallel to the light irradiation direction. Moyo No. In this case, this can be realized by mounting the cathodic electrode vibration mechanism 19 itself on another vibration mechanism that moves the cathodic electrode vibration mechanism 19 without fixing it to the wall portion 15.
- FIGS. 6A and 6B are a plan view (FIG. 6A) and a front view (FIG. 6B) showing still another example of the force source electrode 13 shown in FIG.
- the force source electrodes 13 2 shown in FIGS. 6A and 6B are a set of plate-like bodies, and are configured so that light passes in a direction substantially parallel to both main surfaces thereof.
- the space between the openings is an opening through which light passes.
- the material of the force electrode 13 is platinum
- the pitch between the plates is about 1 Omm
- the height of the plates is about 2 mm
- the thickness is 0.05 to 0. It is about 1 mm.
- the passage of the light beam through the opening becomes as shown in FIG. 6B (that is, light is reflected on both main surfaces of the plate-like body).
- the shadow of the cathode electrode 132 is hardly generated (more precisely, the shadow is generated in a dispersed manner).
- the effect of temporally dispersing the generated shadow can be increased.
- the amount of light irradiation to each part on the substrate to be processed 12 during the time required for the anodizing step is averaged over time and uniform. This makes it possible to make the anodic oxidation treatment more uniform within the surface of the substrate to be processed.
- the movement mechanism as shown in FIG. 3 or FIG. 5 may be provided in the cathode electrode vibration mechanism 19. At that time, in order to make the movement of the force sword electrode 1 3 2 in the vertical direction, Install 90 degrees around the horizontal axis.
- FIG. 7 is a flowchart showing an operation flow of the anodizing apparatus shown in FIG. 1
- the substrate to be processed 12 is mounted on the stage 11 and the mounted state is maintained (step 71).
- the substrate to be processed 12 has a portion to be processed facing upward.
- a substrate transport mechanism such as a robot may be used for mounting on the stage 11.
- the wall portion 15 is lowered and set on the stage 11 and the peripheral portion of the substrate 12 to be processed.
- a liquid seal is established between the periphery of the substrate 12 to be processed and the wall 15, and the electrode of the substrate 12 is processed outside the liquid-sealed portion. And the conductor make electrical contact.
- the cathode electrode vibrating mechanism 19 and the lamp unit 16 are fixed to the wall body 15, these positions are set to be predetermined with respect to the substrate 12 to be processed.
- a processing tank is formed (step 72 above).
- a chemical is filled in the formed processing tank (step 73).
- the chemical solution is, for example, a solution of hydrofluoric acid using ethyl alcohol as a solvent.
- a supply path may be provided in the wall 15 or a supply pipe may be inserted from above the treatment tank.
- step 74 an anodic oxidation reaction is caused on the substrate 12 to be processed.
- a current source drives between the conductor in contact with the electrode of the substrate 12 to be processed and the cathode electrode 13, and the lamp 17 is also covered by the lamp 17 of the lamp unit 16.
- the processing substrate 12 is irradiated. This reaction time is several seconds, depending on conditions such as temperature.
- the periodic vibration of the force source electrode 13, the drive of the current source between the conductor contacting the electrode of the substrate 12 and the force source electrode 13, the substrate to be processed by the lamp 17 of the lamp unit 16 Stop irradiation in step 1 and discharge the chemical.
- the discharge of the chemical solution may be performed, for example, by providing a discharge path in the wall portion 15 or by inserting a discharge pipe from above the treatment tank and sucking out. Since the chemical has a strong corrosive property, the processing tank is cleaned together with the substrate 12 to be processed. Washing for this purpose can be performed, for example, by repeatedly supplying and discharging the washing solution to and from the treatment tank (step 75). As described above, a series of anodizing steps for the substrate to be processed 12 can be completed.
- the mode in which the force source electrodes 13, 13 1, and 13 2 are periodically vibrated has been described.
- the lamp unit 16 and the stage 11 may be used. Even when is periodically vibrated, the uniformity of the anodizing treatment on the surface of the substrate to be processed 12 can be improved by the effect of dispersing the shadow.
- the lamp unit 16 may be hung on a mechanism such as a force-sword electrode vibration mechanism 19.
- a mechanism such as a force-sword electrode vibration mechanism 19
- the stage 11 and the object to be treated were processed by opening the support of the lamp unit support member 18 and the cathode electrode vibration mechanism support member 20 to the wall 15.
- the substrate 12 and the wall 15 may be integrally vibrated periodically.
- a mechanism such as a force electrode vibration mechanism 19 may be provided under the stage 11.
- the anodizing apparatus manufactures an apparatus for producing a display device. It can be manufactured in a manufacturing industry, and can be used in a display device manufacturing industry. Further, the anodic oxidation method according to the present invention can be used in a display device manufacturing industry. Therefore, both can be used industrially.
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- Electrochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
- Weting (AREA)
- Cold Cathode And The Manufacture (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/471,583 US7118663B2 (en) | 2001-11-08 | 2002-11-06 | Anodic oxidizer, anodic oxidation method |
KR1020037016277A KR100577975B1 (ko) | 2001-11-08 | 2002-11-06 | 양극 산화 장치, 양극 산화 방법 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001342803A JP3916924B2 (ja) | 2001-11-08 | 2001-11-08 | 陽極酸化装置、陽極酸化方法 |
JP2001-342803 | 2001-11-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003041147A1 true WO2003041147A1 (en) | 2003-05-15 |
Family
ID=19156593
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2002/011551 WO2003041147A1 (en) | 2001-11-08 | 2002-11-06 | Anodic oxidizer, anodic oxidation method |
Country Status (6)
Country | Link |
---|---|
US (1) | US7118663B2 (ja) |
JP (1) | JP3916924B2 (ja) |
KR (1) | KR100577975B1 (ja) |
CN (1) | CN1225011C (ja) |
TW (1) | TW591121B (ja) |
WO (1) | WO2003041147A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100501936C (zh) * | 2007-03-23 | 2009-06-17 | 厦门大学 | P型硅表面微结构的电化学加工方法 |
JP4562801B2 (ja) * | 2007-05-09 | 2010-10-13 | 株式会社カンタム14 | シリコン基材の加工方法および加工装置 |
CN101250745B (zh) * | 2008-03-20 | 2010-04-07 | 山东理工大学 | 实现半导体材料电解抛光方法所采用的电解抛光装置 |
KR101007661B1 (ko) * | 2010-06-29 | 2011-01-13 | (주)세창스틸 | 프레임보강재가 형성된 창호 |
CN102867883B (zh) * | 2011-07-08 | 2015-04-22 | 茂迪股份有限公司 | 半导体基材表面结构与形成此表面结构的方法 |
JP5908266B2 (ja) * | 2011-11-30 | 2016-04-26 | 株式会社Screenホールディングス | 陽極化成装置及びそれを備えた陽極化成システム並びに半導体ウエハ |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51135472A (en) * | 1975-05-20 | 1976-11-24 | Matsushita Electric Ind Co Ltd | Creation of porous semi-conductors |
EP0563625A2 (en) * | 1992-04-03 | 1993-10-06 | International Business Machines Corporation | Immersion scanning system for fabricating porous silicon films and devices |
JPH0799342A (ja) * | 1993-08-02 | 1995-04-11 | Sumitomo Metal Ind Ltd | 多孔質シリコンの作製方法 |
JPH10256225A (ja) * | 1997-03-07 | 1998-09-25 | Kagaku Gijutsu Shinko Jigyodan | 薄膜基板の陽極化成処理方法及びフォトルミネッセンス特性をもつ半導体薄膜 |
JP2001085715A (ja) * | 1999-09-09 | 2001-03-30 | Canon Inc | 半導体層の分離方法および太陽電池の製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3968020A (en) * | 1973-09-29 | 1976-07-06 | Riken Keikinzoku Kogyo Kabushiki Kaisha | Apparatus for surface treating metal members |
US4507181A (en) * | 1984-02-17 | 1985-03-26 | Energy Conversion Devices, Inc. | Method of electro-coating a semiconductor device |
US4569728A (en) * | 1984-11-01 | 1986-02-11 | The United States Of America As Represented By The Secretary Of The Air Force | Selective anodic oxidation of semiconductors for pattern generation |
US5441618A (en) * | 1992-11-10 | 1995-08-15 | Casio Computer Co., Ltd. | Anodizing apparatus and an anodizing method |
JP2966842B1 (ja) | 1998-09-25 | 1999-10-25 | 松下電工株式会社 | 電界放射型電子源 |
JP3090445B2 (ja) | 1998-09-25 | 2000-09-18 | 松下電工株式会社 | 電界放射型電子源およびその製造方法 |
-
2001
- 2001-11-08 JP JP2001342803A patent/JP3916924B2/ja not_active Expired - Fee Related
-
2002
- 2002-11-06 US US10/471,583 patent/US7118663B2/en not_active Expired - Fee Related
- 2002-11-06 WO PCT/JP2002/011551 patent/WO2003041147A1/ja active Application Filing
- 2002-11-06 CN CNB028056876A patent/CN1225011C/zh not_active Expired - Fee Related
- 2002-11-06 KR KR1020037016277A patent/KR100577975B1/ko not_active IP Right Cessation
- 2002-11-08 TW TW091132896A patent/TW591121B/zh not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51135472A (en) * | 1975-05-20 | 1976-11-24 | Matsushita Electric Ind Co Ltd | Creation of porous semi-conductors |
EP0563625A2 (en) * | 1992-04-03 | 1993-10-06 | International Business Machines Corporation | Immersion scanning system for fabricating porous silicon films and devices |
JPH0799342A (ja) * | 1993-08-02 | 1995-04-11 | Sumitomo Metal Ind Ltd | 多孔質シリコンの作製方法 |
JPH10256225A (ja) * | 1997-03-07 | 1998-09-25 | Kagaku Gijutsu Shinko Jigyodan | 薄膜基板の陽極化成処理方法及びフォトルミネッセンス特性をもつ半導体薄膜 |
JP2001085715A (ja) * | 1999-09-09 | 2001-03-30 | Canon Inc | 半導体層の分離方法および太陽電池の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1225011C (zh) | 2005-10-26 |
JP2003147599A (ja) | 2003-05-21 |
KR20040028780A (ko) | 2004-04-03 |
TW200303375A (en) | 2003-09-01 |
JP3916924B2 (ja) | 2007-05-23 |
US7118663B2 (en) | 2006-10-10 |
CN1494736A (zh) | 2004-05-05 |
US20040084317A1 (en) | 2004-05-06 |
TW591121B (en) | 2004-06-11 |
KR100577975B1 (ko) | 2006-05-11 |
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