WO2003017320A1 - Lampe equipee d'une diode electroluminescente - Google Patents

Lampe equipee d'une diode electroluminescente Download PDF

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Publication number
WO2003017320A1
WO2003017320A1 PCT/KR2002/001582 KR0201582W WO03017320A1 WO 2003017320 A1 WO2003017320 A1 WO 2003017320A1 KR 0201582 W KR0201582 W KR 0201582W WO 03017320 A1 WO03017320 A1 WO 03017320A1
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WO
WIPO (PCT)
Prior art keywords
led
layer
lamp utilizing
substrate
electrode portion
Prior art date
Application number
PCT/KR2002/001582
Other languages
English (en)
Inventor
Nam-Young Kim
Original Assignee
Nam-Young Kim
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020010050314A external-priority patent/KR20030017686A/ko
Priority claimed from KR10-2002-0039985A external-priority patent/KR100523740B1/ko
Application filed by Nam-Young Kim filed Critical Nam-Young Kim
Publication of WO2003017320A1 publication Critical patent/WO2003017320A1/fr

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/233—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating a spot light distribution, e.g. for substitution of reflector lamps
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays

Definitions

  • the present invention relates to a lamp, and more particularly, to a lamp utilizing a light emitted diode (LED).
  • LED light emitted diode
  • a lamp used for illumination of a space or in a variety of image display devices has a structure using a flow discharge to emit light by exiting fluorescent substance which radiates a ultraviolet ray generated during the glow discharge.
  • a light emitting diode hereinafter, referred to as "LED" which converts an electric signal to an ultraviolet ray or light by using a feature of chemical semiconductor. LED is widely used for an indication device in a variety of mechanical apparatuses, an illuminating device inside or outside an automobile, and an electronic display board.
  • LED emits light by the combination of an electron and a hole.
  • the color of light emitted corresponds to energy of emitted photons. Since different substance have different band gaps, a variety of colors can be realized by combining different substances.
  • LED is widely used as an illumination apparatus because of features such as a small size, a low power consumption, a low heat radiation, and a long life span.
  • LED used as a lamp a chip where a P type layer and an N type layer are deposited is installed at a lead frame to which anode is applied.
  • the chip is electrically connected to a lead terminal to which cathode is applied by a gold wire.
  • the chip, the gold wire, and end portions of the lead frame and the lead terminal are molded by epoxy resin.
  • LED is formed of a single unit, to increase brightness, a plurality of LEDs must be arranged and installed.
  • Korean Utility Model Publication No. 1999-0021718 discloses a lamp using LED.
  • the lamp includes a lamp base connected to an external electric power, a plurality of LEDs arranged in a matrix structure to form a light emitting portion, an LED substrate for supporting the LEDs, and a wire through which electric power input via a circuit board to the LEDs.
  • a plurality of connectors into which a lead terminal of LED can be detachably inserted is installed at the lamp.
  • Japanese Patent Publication No. hei 7-129100 discloses an incorporated lamp panel module which is easy to control brightness.
  • the lamp panel module uses a plurality of LEDs of the three primary colors of red, green, and blue.
  • the LEDs of red, green, and blue forms a single pixel and a plurality of such pixels are arranged.
  • Red and green LEDs have an anode or cathode common circuit and a blue LED has an independent circuit.
  • the present invention provides a lamp utilizing an LED which can simplify a manufacturing process to improve productivity and luminance.
  • the present invention provides a lamp utilizing an LED which can increase a degree of integration of LEDs to improve the efficiency of light emission.
  • the present invention provides a lamp utilizing an LED in which a feature of deposition of an LED formed on an electrode layer is improved.
  • a lamp utilizing an LED which can increase brightness by allowing the light generated from an LED layer to radiate toward the front side of the lamp.
  • a lamp utilizing an LED comprising a substrate, a first electrode portion formed on an upper surface of the substrate in a predetermined pattern, an LED layer having a plurality LED portions formed in a predetermined pattern on an upper surface of the first electrode portion by epitaxial growth or deposition and having one side electrically connected to the first electrode portion, and a second electrode portion formed on the upper surface of the substrate in a predetermined pattern and electrically connected to the other side of the LED layer.
  • the first electrode portion is formed of a conductive material on the entire surface of the substrate.
  • a transparent resin layer in which a via hole connected to the upper surface of the LED layer is formed, is formed on the substrate on which the first electrode portion and the LED portion are formed.
  • the second electrode portion comprises a transparent insulation layer where a via hole is formed at a side corresponding to the LED layer and a common electrode is formed on the upper surface of the transparent layer in a predetermined pattern and is electrically connected to the upper surface of the LED layer through the via holes.
  • the LED layer comprises a P type layer epitaxially grown or deposited to be electrically connected to the first electrode portion and an N type layer deposited on an upper surface of the P type layer.
  • the lamp utilizing an LED further comprises a graded layer to grow a single crystallization having a lattice constant corresponding to that of a material forming the LED layer between the first electrode portion and the LED layer.
  • a lamp utilizing an LED comprises a light emitting unit comprising a substrate, a first electrode portion formed on an upper surface of the substrate, an LED layer formed on an upper surface of the first electrode portion in a predetermined interval pattern by epitaxial growth or deposition to be electrically connected to the first electrode portion, a transparent insulation layer in which the LED layer is exposed or a via hole is formed, and a second electrode portion formed on an upper surface of the transparent insulation layer to be electrically connected to an upper surface of the LED layer, a frame supporting the light emitting unit and having a socket portion supplying current, and a driving portion supported by the frame to support the light emitting unit.
  • a lamp utilizing an LED comprises a substrate, a first electrode formed in a predetermined pattern on an upper surface of the substrate, an insulation layer formed on an upper surface of the first electrode, an LED layer having a light emitting portion divided in a widthwise direction to expose the insulation layer by epitaxially growing and depositing a conductive layer, a P type layer, and an N type layer on the upper surface of the insulation layer and having a plurality of LED portions electrically connected to the first electrode portion, a light emitting unit having a second electrode portion driving the respective LED portions by electrically connecting the upper surfaces of the LED portions.
  • a lamp utilizing an LED comprises a substrate, a first electrode formed in a predetermined pattern on an upper surface of the substrate, an insulation layer formed on an upper surface of the first electrode, a conductive layer formed on an upper surface of the insulation layer to be electrically connected to the first electrode portion of the predetermined pattern, an LED layer having LED portions formed by forming a groove of a closed curve around an area corresponding to the conductive layer on a P type layer and an N type layer formed on the upper surface of the conductive layer and the insulation layer by epitxial growth or deposition, and a light emitting unit having a second electrode portion driving the respective LED portions by electrically connecting the upper surfaces of the LED portions.
  • FIG. 1 is a section view illustrating a lamp utilizing an LED according to a preferred embodiment of the present invention
  • FIGS. 2 through 3 are sectional views illustrating other preferred embodiments of the lamp utilizing an LED
  • FIG. 4 is a partially cut-away perspective view illustrating a light emitting unit of the lamp according to a preferred embodiment of the present invention
  • FIGS. 5 and 6 are sectional views illustrating light emitting units according to another preferred embodiments of the present invention.
  • FIG. 7 is a partially cut-away perspective view illustrating a second electrode portion
  • FIGS. 8 and 9 are sectional views illustrating light emitting units according to anther preferred embodiments of the present invention.
  • FIG. 10 is a partially cut-away perspective view illustrating a light emitting unit according to another preferred embodiment of the present invention
  • FIG. 11 is a sectional view illustrating the light emitting unit shown in FIG. 10;
  • FIG. 12 is a sectional view illustrating a light emitting unit according to another preferred embodiment of the present invention.
  • FIG. 13 is a sectional view illustrating a light emitting unit according to another preferred embodiment of the present invention
  • FIGS. 14 and 15 are plan views illustrating the second electrode portions according to the present invention
  • FIG. 16 is a partially cut-away perspective view illustrating a light emitting unit according to another preferred embodiment of the present invention.
  • FIG. 17 is a sectional view illustrating the light emitting unit shown in FIG. 16;
  • FIGS. 18 and 19 are partially cut-away perspective views illustrating first electrode portions;
  • FIGS. 20 and 21 are plan views illustrating the second electrode portions according to the present invention.
  • FIG. 22 is a sectional view illustrating a light emitting unit according to another preferred embodiment of the present invention.
  • FIG. 23 is a sectional view illustrating a light emitting unit according to another preferred embodiment of the present invention.
  • FIG. 24 is a perspective view illustrating the light emitting unit shown in FIG. 23;
  • FIGS. 25 and 26 are perspective views illustrating light emitting units according to another preferred embodiments of the present invention.
  • FIG. 27 is a sectional view illustrating a light emitting unit shown in FIG. 26;
  • FIG. 28 is a sectional view illustrating a light emitting unit according to another preferred embodiment of the present invention
  • FIG. 29 is a perspective view illustrating a light emitting unit according to another preferred embodiment of the present invention
  • FIG. 30 is a partially cut-away perspective view illustrating a lamp utilizing an LED according to another preferred embodiment of the present invention.
  • FIG. 31 is a sectional view illustrating a lamp utilizing an LED according to another preferred embodiment of the present invention.
  • FIGS. 1 through 3 show a lamp utilizing an LED according to a preferred embodiment of the present invention.
  • a lamp 10 utilizing an LED includes a light emitting unit 20, a frame 200 for supporting the light emitting unit 20, a socket portion 201 installed at the frame 200 to supply a predetermined current to the light emitting unit 20, and a driving portion 300, supported by the frame 200 and electrically connected between the socket portion 201 and the light emitting unit 20, to drive the light emitting unit 20.
  • the light emitting unit 20, as shown in FIGS. 4 and 5, includes a substrate 21 and a first electrode portion 22 formed on the upper surface of the substrate 21.
  • the first electrode portion 22 can be formed on the entire surface of the substrate 21 and also can be formed of aluminum, silver, copper or an alloy thereof.
  • An insulation layer 23 is formed on the upper surface of the first electrode portion 22 which is formed on the substrate 21.
  • a via hole 23a is formed in an area of the insulation layer 23 where an LED layer to be described later is to be formed.
  • a conductive layer 24 electrically connected to the first electrode portion 22 is formed in and around the via hole 23a. in the insulation layer 23, only the via hole 23a can be formed in which the first electrode portion 22 is exposed and the LED layer is to be formed.
  • a reflection layer 25 is formed around the conductive layer 24 formed on the upper surface of the insulation layer 23.
  • the reflection layer 25 is formed by coating silver epoxy. Although not shown in the drawings, the reflection layer 25 can be formed on the entire upper surface of the substrate 21.
  • An LED layer 30 for emitting light is deposited on the upper surface of the conductive layer 24.
  • the LED layer 30 includes a P type layer 31 formed on the upper surface of the conductive layer 24 through epitaxial growth or deposition and an N type layer 32 deposited on the upper surface of the P type layer 31.
  • the P type layer 31 and the N type layer 32 can be repeatedly formed by using various materials according to the type the LED layer, as shown in FIG. 6.
  • the LED layer 30 may be formed directly on the upper surface of the first electrode portion 22 formed on the substrate 21.
  • the LED layer 30 formed on the conductive layer 24 can be formed of various materials according to the color that the LED layer 30 will radiate.
  • the pitch of the LED layer 30 is preferably set between 0.05 mm through 5 mm.
  • AIGalnp based material or ZnCdMgSeS based material can be used for the LED layer 30.
  • the LED layers 30 formed on the substrate 21 are connected by second electrode portions 26 which are electrically connected to the first electrode portions 22.
  • the LED layer 30 can be molded by a transparent insulation layer 27 formed on the upper surface of the substrate 21.
  • the transparent insulation layer 27 is formed of a color filter layer.
  • a white fluorescent layer (not shown) can be formed on the upper surface of the LED layer 30.
  • an ultraviolet ray generated by the LED layer 30 excites a fluorescent substance of the white fluorescent layer to emit light, a variety of colors can be realized.
  • a scattering agent for scattering the light emitted from the LED layer 30 can further be included in the transparent insulation layer.
  • the second electrode portion 26 includes a common electrode
  • connection electrode 26a formed on the upper surface of the insulation layer 23 and a connection electrode 26b connecting the common electrode 26a and the N type layer 32 of the LED layer 30.
  • the common electrode 26a and the connection electrode 26b can be formed of aluminum and its alloy, conductive polymer including aluminum, gold, silver, copper, nickel, and chrome, or a transparent conductive film (ITO).
  • the connection electrode 26b as shown in FIGS. 4 through 6, may be a gold wire penetrating the transparent insulation layer 27 and connected to the N type layer 32.
  • the second electrode portion 26 may be formed by depositing the common electrode 26a and the connection electrode 26b. In this case, the connection electrode 26b electrically connected to the N type layer is formed in a conic groove formed in the transparent insulation layer 27 and the connection electrode 26b is deposited on the connection electrode 26b.
  • FIGS. 8 and 9 show another preferred embodiments of the second electrode portion.
  • a second electrode portion 28 includes a connection electrode 28a penetrating the transparent insulation layer 27 and electrically connected to the N type layer 32 and a main electrode 28b formed on the insulation layer 23 and the transparent insulation layer 27 and electrically connected to the connection electrode 28a.
  • the connection electrode 28a may be a gold wire.
  • a conic groove is formed in the transparent insulation layer 27 and the groove is filled with a transparent conductive material or conductive metal such as gold or silver, forming the main electrode 28b.
  • a partition wall 36 for reflecting the light generated from the LED layer 30 toward the front side of the lamp can be formed on and above the upper surface of the substrate 21 or the insulation layer 22 where the first and second electrode portions 22 and 26 are formed.
  • the partition wall 36 may have a lattice or polygonal shape.
  • a reflection film 34a can be formed on an inner side surface of the partition wall 36 corresponding to the LED layer 30.
  • a protection layer 37 formed of a transparent resin can be formed on the substrate 21 to protect the second electrode portions 26 and 28.
  • a light scattering layer 38 for scattering the light emitted from the LED layer 30 can be further formed on the upper surface of the protection layer 37.
  • the light scattering layer 38 includes glass power or crystal powder.
  • the lamp utilizing an LED having the above structure when a voltage is applied to the first and second electrode portions 22 and 26, a predetermined voltage is applied to the P type layer 31 and the N type layer 32 of the LED layer 30 so that current flows in a forward direction. Accordingly, electrons in the N type layer 32 and holes in the P type layer 31 are injected into the P type layer 31 and the N type layer 32, respectively, so as to disperse as a few number of carriers. The few number of carriers are re-coupled to a plurality of carriers during the dispersion operation to emit light corresponding to a difference in energy between both carriers.
  • FIGS. 10 and 11 show light emitting units according to another preferred embodiments of the present invention.
  • a light emitting unit 40 includes a substrate 41 and a first electrode portion 42 formed on the substrate 41.
  • the first electrode portion 42 can be formed on the entire upper surface of the substrate 41 or into a predetermined pattern.
  • the material of the first electrode portion 42 may be aluminum, silver, copper or their alloys.
  • An LED layer 50 including a P type layer 51 and an N type layer 52 is formed on the upper surface of the substrate 41 where the first electrode portion 42 is formed, that is, the upper surface of the first electrode portion 42.
  • a light emitting portion 55 exposing a boundary portion 53 between the P type layer 51 and the N type layer 52 and having an inclined surface 54 is formed so that the LED layer 50 is divided into a plurality of LED portions 50a.
  • the light emitting portion 55 forms a lattice or closed-curve pattern so that the LED portions 50a can independently emit light.
  • the light emitting portion 5 is not limited to the above preferred embodiments and any structure capable of sectioning the LED layer 50 into a plurality of LED portions 50a and emitting light from the boundary portion 53 between the P type layer 51 and the N type layer 52 can be adopted.
  • a groove having a V shape is substantially formed between the LED portions 50a, as shown in FIG. 12, so that the side surfaces of the LED portion 50a are inclined and a reflection film 55a is coated on the inclined surface.
  • a light scattering layer 55b including a light scattering agent is formed in the boundary portion 53 between the P type layer 51 and the N type layer 52 forming the LED portions 50a to scatter the light emitted from the boundary portion 53.
  • FIG. 13 shows another preferred embodiment of the light emitting portion.
  • a light emitting portion 56 divides the LED portions 50a and includes two grooves 56a and 56b parallel to each other and having inclined surfaces 56c, 56d, 56e, and 56f.
  • a reflection film 57 is formed at each of the inclined surfaces 56e and 56f of the grooves 56a and 56b corresponding to the boundary portion 53 of the P type layer 51 and the N type layer 52.
  • the N type layers 52 of the LED 50a divided by each of the light emitting portions 55 and 56 are connected by second electrode portions 58.
  • the second electrode portions 58 are continuously connected by a gold wire 58a, as shown in FIG. 14.
  • the second electrode portions 58 may include dividing electrodes 58c dividing the divided LED portions 50a into a plurality of sections and connecting the LED portions 50a in the divided sections, and common electrodes 58d electrically connecting the dividing electrodes 58c.
  • a transparent insulation layer 59 covering the LED portion 50a is formed on the upper surface of the substrate 41 where the second electrode portions 58 are formed.
  • the transparent insulation layer 59 can be formed of a color filter passing a predetermined wavelength range.
  • a second electrode portion 60 of the light emitting unit includes a transparent insulation layer 61 in which indented grooves 62, each having a truncated conic shape and connected to the N type layers 52 of the LED portions 50a, are formed on the upper surface of the LED layer 50 where the LED portions 50a divided by the light emitting portion 55 or 56 are formed, a first connection portion 63 filling the indented grooves 62 and electrically connected to the N type layer 52, and a second connection portion 64 electrically connecting the first connection portion 63 connected to the N type layer 52 of each of the LED portions 50a.
  • the first connection portion 63 can further include a plated layer 65 made of gold, silver, or an alloy thereof on the inner circumferential surface of each of the indented grooves 62, as shown in FIG. 18.
  • the indented grooves 62 may be formed to be stepped and have a gradually decreasing diameter.
  • the indented grooves 62 is not limited to the above-described structure and may have any structures that can reduce a sectional area of the first connection portion 63 electrically contacting the LED portion 50a.
  • the N type layers 52 of the LED portions 50a are continuously connected, as shown in FIG. 20, or the LED layer 50 is divided into a plurality of sections and the second connection portion 64 is divided, forming divided electrodes, so that the N type layers 52 of the LED portions 50a of the divided sections are connected, as shown in FIG. 21 , and the same or different electric potentials can be applied to the divided electrodes,
  • the transparent insulation layer 61 can be formed of an insulative color filer layer.
  • the second connection portion 64 of the second electrode portion 60 can further include an additional bus electrode (not shown) made of conductive metal to reduce line resistance.
  • the second electrode portion 60 is not limited to the above-described structure and any structures capable of connecting all N type layers of the LED portions 50a can be adopted therefor.
  • FIG. 22 shows another preferred embodiment of the light emitting unit.
  • a light emitting unit 70 includes a P type layer 71 and an N type layer 72 formed on the upper surface of the P type layer 71 , a wafer 76 in which a boundary portion 73 between the P type layer 71 and the N type layer 72 is exposed, a plurality of LED portions 74 are formed by dividing the P type layer 71 and the N type layer 72, not to separate P type layer 71 , and a light emitting portion 75 emitting light during driving is formed, a first electrode portion 77 formed on the lower surface of the P type layer 71 of the wafer 76, and a second electrode portion 78 connecting the N type layers 72 of the respective LED portions 74 divided by the light emitting portion 75.
  • the wafer 76 having the P type layer 71 and the N type layer 72 is formed by single crystallization epitaxial growth of a nitrogen compound semiconductor material.
  • a transparent insulation layer is formed on the upper surface of the wafer where the second electrode portion 78 is formed.
  • the wafer 76 can be enclosed by an additional protecting means such as aery I.
  • the second electrode portion 78 can be connected by a gold wire as in the above-described preferred embodiments and can have a structure including a first connection portion filling an indented groove having a truncated conic shape formed in the transparent insulation layer corresponding to the N type layer 72 and a second connection portion connecting the first connection portions. Since the above structure and the structure and operation of the light emitting portion are the same as those of the above preferred embodiments, detailed descriptions thereof will be omitted herein.
  • FIGS. 23 and 24 show another preferred embodiment of the light emitting unit 80. Referring to the drawings, a first electrode portion 82 is formed on the upper surface of a substrate 81.
  • a plurality of LED portions 83 are formed by depositing a P type layer 83 on the upper surface of the first electrode portion 82 electrically connected to the first electrode portion 82 and in a pattern having a predetermined interval, and an N type layer 83b on the upper surface of the P type layer 83a.
  • a reflection partition wall 84 having at least one reflection surface 84a for reflecting light emitted from the LED portions 83 toward the front side is formed around each of the LED portions 83 to be separated from a predetermined distance from the LED portions 83.
  • the reflection partition wall 84 formed around each LED portion 83 can be formed as a concave groove 84b having an inclined reflection surface 84a, as shown in FIG. 24.
  • a reflection partition wall 84' can be formed to have a lattice shape having an inclined reflection surface 84a', as shown in FIG. 25.
  • a transparent insulation layer 85 is formed on the upper surface of a substrate where the reflection partition wall 84 or 84'.
  • a second electrode portion 86 for supplying a predetermined voltage to each of the LED portions 83 is formed on the upper surface of the transparent insulation layer 85.
  • the second electrode portion 86 is the same as the above-described preferred embodiments.
  • the transparent insulation layer 85 can be formed of a color filter layer.
  • a graded layer 100 which can be formed of material meeting a lattice constant of a nitrogen semiconductor material and grow as a single crystallization, so that the P type layer or N type layer can grow smoothly, can further be provided between the first electrode portion 22, 42, 77, and 82 and the LED portions 50a, 74, and 83.
  • the graded layer 100 can be formed of sapphire powder, silicon carbide, and a silicon based powder.
  • the graded layer 100 using the above material can be formed by dispersing powder to form the graded layer 100 on the upper surface of the first electrode portion and heat processing it by using plasma and laser.
  • the nitrogen semiconductor material for forming the LED layer can be formed of one of GaN, P-GaN, InGaN, AIGaN, GaP, GaAs, GaAsP, GaAIAs, and InGaAIP.
  • FIGS. 26 and 27 show another preferred embodiment of the light emitting unit .
  • a light emitting unit includes a substrate 93 made of conductive metal and on which a plurality of indented portions 92 having at least one reflection surface 91 are formed, a plurality of LED portions 94 each accommodated in the respective indented portions 92 of the substrate 93 and having one side electrically contacting the substrate 93, and a second electrode portion 95 connecting the LED portions 94.
  • the LED portions 94 includes a P type layer 94a electrically contacting the bottom surface of the indented portion 92 and an N type layer 94b deposited on the P type layer 94a and electrically connected to the second electrode portion 95.
  • the substrate 93 made of conductive metal functions as a first electrode portion.
  • a transparent insulation layer 96 can be formed on the upper surface of the substrate 93.
  • the second electrode portion comprises of a first connection portion penetrating the transparent insulation layer and connected to the LED portion 94 and a second connection portion connecting the first connection portions.
  • FIG. 28 shows a light emitting unit according to another preferred embodiment of the present invention.
  • a first electrode portion 112 is formed on the upper surface of a substrate 111.
  • An insulation layer 113 is formed on the upper surface of the first electrode portion 112.
  • a conductive layer 114 electrically connecting to the first electrode portion 112 through a via hole 113a is formed on the upper surface of the insulation layer 113.
  • a P type layer 115c and an N type layer 115d are formed on the entire upper surface of the conductive layer 114 of the substrate 111 by epitaxial growth or deposition.
  • At least two grooves 116 are formed to expose the deposited conductive layer 114 and the P type and N type layers in a widthwise direction and the insulation layer 113, so that the conductive layer 114 and an LED portion 115a in which the P type layer and the N type layer are divided can be formed.
  • the grooves 116 are formed on either side of each of the LED portions 115a and has a reflection film 116a at a surface corresponding to the LED portions 115a so that light can be reflected toward the front side.
  • the grooves 116 forms a closed curve groove 116' around the LED portion 115a as shown in FIG. 29 so that the LED portion 115a connected to the first electrode portion 112 can form an island.
  • a reflection film 116b is formed on the inner surface of the closed curved groove 116' which does not form an LED portion so that the light emitted from the LED portion 115a can be emitted toward the front side.
  • a graded layer 100 can be formed between the conductive layer
  • the frame 200 has a funnel shape, as shown in FIG. 1, and includes a fixed portion installed at an enlarged and open entrance, for supporting the light emitting unit 20 having a flat shape or a predetermined shape, and the socket portion 201 installed at an end portion corresponding to the fixed portion for applying a predetermined current to the light emitting unit 20.
  • the frame 200 is not limited to the above-described preferred embodiment and can be modified in a variety of ways according to the structure of a lamp, as shown in FIGS. 2 and 3.
  • a heat dissipating means 210 for dissipating heat generated during driving of the LED layer is further provided inside the frame 200 or at the rear surface of the substrate of the light emitting unit.
  • the heat dissipating means 210 as shown in FIG. 1 , includes a heat dissipating fin 212 attached to the rear surface of the substrate 21.
  • a through hole to make the flow of air smooth can be formed at the outer circumferential surface of the frame 200.
  • the heat dissipating means can use a heat pipe 211, as shown in FIG. 30.
  • a heat receiving portion 211a of the heat pipe 211 penetrates the substrate and a heat dissipating portion 211 b can contact the heat dissipating fin 212 installed at the outer circumferential surface of the frame 200.
  • the LED portions emit light.
  • the emitted light directs the front side by the light emitting portion or the reflection film formed on the partition wall.
  • the lamp 10 utilizing the LED operating as described above can emit light of a high brightness because integration of the LED portions is possible. Since the second electrode portion is divided into a plurality of divided electrodes 5c and the common electrodes 58d connecting the divided electrodes 5c, when a voltage is applied to the respective LED portions, irregular brightness of the emitted light due to line resistance can be reduced.
  • FIG. 31 shows a lamp utilizing an LED according to another preferred embodiment of the present invention.
  • a lamp 120 includes a connector 122 having a connection portion 121 for applying electrical potential to the first and second electrode portions (not shown), a plurality of light emitting units 123 installed on the connector 122 at a predetermined interval, and a reflection means 124 installed at least one side of the connector 122 or the light emitting unit 123, for reflecting light toward the front side.
  • the light emitting unit 123 is installed parallel to or at an angle with respect to the substrate so that a light emitting portion of the LED portion 123a directs the front side.
  • the light emitting unit can be one of the above preferred embodiments.
  • the reflection means 124 can be formed by a groove or a concave portion having an inclined reflection surface formed in the connector 122 or by an additional reflection plate (not shown).
  • the light generated by the light emitting unit is reflected by the reflection means to proceed toward the front side. Since a plurality of light emitting units are installed, light of a high brightness can be emitted. Since in the lamp according to the present invention a light source is formed by dividing the LED layer, which is formed by combining the P type layer and the N type layer, by the light emitting portion into a plural number, brightness of the light is high and life span of the lamp is semi-permanent. Since the LED portion is formed on the entire surface of the substrate and then divided, a process is simplified and consequently productivity can be improved by mass production.
  • the lamp utilizing an LED according to the present invention can be applied to a variety of fields such as indoor/outdoor signs in the public facilities, interior decorations, head lights for automobiles, traffic signal lights, street lights, traffic sign boards, back lights for LCDs, and projector lamps.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • General Engineering & Computer Science (AREA)
  • Led Devices (AREA)

Abstract

L'invention concerne une lampe équipée d'une diode électroluminescente formée par intégration directe d'une pluralité de couches à diodes électroluminescentes par croissance épitaxiale et dépôt épitaxial. La lampe équipée d'une diode électroluminescente comprend un substrat, une première électrode formée sur une surface supérieure du substrat selon un modèle prédéterminé, une couche à diodes électroluminescentes présentant une pluralité de diodes électroluminescentes formées selon un modèle prédéterminé sur une surface supérieure de la première électrode par croissance épitaxiale ou dépôt épitaxial et présentant un côté électriquement connecté à la première électrode, et une seconde électrode formée sur la surface supérieure du substrat selon un modèle prédéterminé et électriquement connectée à l'autre côté de la couche à diodes électroluminescentes. Ce type de lampe est souvent utilisé dans les automobiles et les appareils d'éclairage intérieurs et extérieurs.
PCT/KR2002/001582 2001-08-21 2002-08-21 Lampe equipee d'une diode electroluminescente WO2003017320A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR2001/50314 2001-08-21
KR1020010050314A KR20030017686A (ko) 2001-08-21 2001-08-21 Ｌｅｄ 램프
KR10-2002-0039985A KR100523740B1 (ko) 2002-01-22 2002-07-10 발광다이오드를 이용한 램프
KR2002/39985 2002-07-10

Publications (1)

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WO2003017320A1 true WO2003017320A1 (fr) 2003-02-27

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Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005027082A1 (fr) * 2003-09-17 2005-03-24 Canterprise Limited Enseigne ou decoration
WO2005109534A2 (fr) * 2004-04-30 2005-11-17 Lighting Science Group Corporation Ampoule electrique a dispersion de lumiere grand angle et procede de fabrication
JP2006165543A (ja) * 2004-12-02 2006-06-22 Samsung Electro Mech Co Ltd 半導体発光素子及びその製造方法
EP1814165A1 (fr) * 2006-01-30 2007-08-01 Shinko Electric Industries Co., Ltd. Dispositif semi-conducteur et procédé de fabrication d'un dispositif semi-conducteur
CN100395625C (zh) * 2004-05-11 2008-06-18 株式会社日立显示器 液晶显示器
DE102007029213A1 (de) * 2007-06-13 2008-12-18 Leurocom Electronic Displays Gmbh Leuchtanzeige und Verfahren zum Herstellen einer Leuchtanzeige
WO2009037722A1 (fr) * 2007-09-17 2009-03-26 Wissen Lux S.P.A. Dispositif d'éclairage à del
EP2221873A1 (fr) * 2009-02-18 2010-08-25 LG Innotek Co., Ltd. Dispositif électroluminescent
US7824065B2 (en) 2004-03-18 2010-11-02 Lighting Science Group Corporation System and method for providing multi-functional lighting using high-efficiency lighting elements in an environment
US8004203B2 (en) 2004-04-23 2011-08-23 Lighting Science Group Corporation Electronic light generating element with power circuit
US8292175B2 (en) 2007-06-08 2012-10-23 Lg Innotek Co., Ltd. Tag device, reader device, and RFID system
DE102012202102A1 (de) * 2012-02-13 2013-08-14 Osram Gmbh Leuchtvorrichtung mit Volumenstrahler-LED-Chips auf einem gemeinsamen Substrat
US8901831B2 (en) 2012-05-07 2014-12-02 Lighting Science Group Corporation Constant current pulse-width modulation lighting system and associated methods
WO2018002251A1 (fr) * 2016-07-01 2018-01-04 Valeo Vision Dispositif d'eclairage et/ou de signalisation pour vehicule automobile
CN110323212A (zh) * 2018-03-29 2019-10-11 群创光电股份有限公司 电子装置

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US4775645A (en) * 1983-12-26 1988-10-04 Victor Company Of Japan, Limited Method of producing a flat LED panel display
JPH0553511A (ja) * 1991-08-28 1993-03-05 Toyoda Gosei Co Ltd カラーデイスプレイ装置
JPH08264840A (ja) * 1995-03-27 1996-10-11 Sanyo Electric Co Ltd 発光ダイオード表示器
WO1998021917A1 (fr) * 1996-11-12 1998-05-22 L.F.D. Limited Lampe
WO2001024583A1 (fr) * 1999-09-29 2001-04-05 Transportation And Environment Research Institute Ltd. Lampe a diode electroluminescente
WO2001033640A1 (fr) * 1999-11-03 2001-05-10 Osram Opto Semiconductors Gmbh & Co. Ohg Source de lumiere blanche a del et a excitation a large bande
EP1104032A2 (fr) * 1999-11-26 2001-05-30 Morix Co., Ltd. Module thermoélectrique

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Publication number Priority date Publication date Assignee Title
US4445132A (en) * 1980-06-13 1984-04-24 Tokyo Shibaura Denki Kabushiki Kaisha LED Module for a flat panel display unit
US4775645A (en) * 1983-12-26 1988-10-04 Victor Company Of Japan, Limited Method of producing a flat LED panel display
JPH0553511A (ja) * 1991-08-28 1993-03-05 Toyoda Gosei Co Ltd カラーデイスプレイ装置
JPH08264840A (ja) * 1995-03-27 1996-10-11 Sanyo Electric Co Ltd 発光ダイオード表示器
WO1998021917A1 (fr) * 1996-11-12 1998-05-22 L.F.D. Limited Lampe
WO2001024583A1 (fr) * 1999-09-29 2001-04-05 Transportation And Environment Research Institute Ltd. Lampe a diode electroluminescente
WO2001033640A1 (fr) * 1999-11-03 2001-05-10 Osram Opto Semiconductors Gmbh & Co. Ohg Source de lumiere blanche a del et a excitation a large bande
EP1104032A2 (fr) * 1999-11-26 2001-05-30 Morix Co., Ltd. Module thermoélectrique

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005027082A1 (fr) * 2003-09-17 2005-03-24 Canterprise Limited Enseigne ou decoration
US7824065B2 (en) 2004-03-18 2010-11-02 Lighting Science Group Corporation System and method for providing multi-functional lighting using high-efficiency lighting elements in an environment
US8004203B2 (en) 2004-04-23 2011-08-23 Lighting Science Group Corporation Electronic light generating element with power circuit
WO2005109534A2 (fr) * 2004-04-30 2005-11-17 Lighting Science Group Corporation Ampoule electrique a dispersion de lumiere grand angle et procede de fabrication
WO2005109534A3 (fr) * 2004-04-30 2006-11-02 Lighting Science Group Corp Ampoule electrique a dispersion de lumiere grand angle et procede de fabrication
CN100395625C (zh) * 2004-05-11 2008-06-18 株式会社日立显示器 液晶显示器
JP2006165543A (ja) * 2004-12-02 2006-06-22 Samsung Electro Mech Co Ltd 半導体発光素子及びその製造方法
US8097502B2 (en) * 2004-12-02 2012-01-17 Samsung Led Co., Ltd. Semiconductor light emitting device and method of manufacturing the same
EP1667228A3 (fr) * 2004-12-02 2010-01-20 Samsung Electro-Mechanics Co., Ltd Dispositif semi-conducteur d'émission de la lumière et sa méthode de fabrication
US7719013B2 (en) 2004-12-02 2010-05-18 Samsung Electro-Mechanics Co., Ltd. Semiconductor light emitting device and method of manufacturing the same
EP1814165A1 (fr) * 2006-01-30 2007-08-01 Shinko Electric Industries Co., Ltd. Dispositif semi-conducteur et procédé de fabrication d'un dispositif semi-conducteur
US8292175B2 (en) 2007-06-08 2012-10-23 Lg Innotek Co., Ltd. Tag device, reader device, and RFID system
DE102007029213A1 (de) * 2007-06-13 2008-12-18 Leurocom Electronic Displays Gmbh Leuchtanzeige und Verfahren zum Herstellen einer Leuchtanzeige
WO2009037722A1 (fr) * 2007-09-17 2009-03-26 Wissen Lux S.P.A. Dispositif d'éclairage à del
EP2221873A1 (fr) * 2009-02-18 2010-08-25 LG Innotek Co., Ltd. Dispositif électroluminescent
US8242509B2 (en) 2009-02-18 2012-08-14 Lg Innotek Co., Ltd. Light emitting device
DE102012202102A1 (de) * 2012-02-13 2013-08-14 Osram Gmbh Leuchtvorrichtung mit Volumenstrahler-LED-Chips auf einem gemeinsamen Substrat
US8901831B2 (en) 2012-05-07 2014-12-02 Lighting Science Group Corporation Constant current pulse-width modulation lighting system and associated methods
WO2018002251A1 (fr) * 2016-07-01 2018-01-04 Valeo Vision Dispositif d'eclairage et/ou de signalisation pour vehicule automobile
FR3053435A1 (fr) * 2016-07-01 2018-01-05 Valeo Vision Dispositif d’eclairage et/ou de signalisation pour vehicule automobile
CN110323212A (zh) * 2018-03-29 2019-10-11 群创光电股份有限公司 电子装置
CN113410218A (zh) * 2018-03-29 2021-09-17 群创光电股份有限公司 电子装置

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