WO2003010369A1 - Oxide high-critical temperature superconductor acicular crystal and its production method - Google Patents
Oxide high-critical temperature superconductor acicular crystal and its production method Download PDFInfo
- Publication number
- WO2003010369A1 WO2003010369A1 PCT/JP2002/005715 JP0205715W WO03010369A1 WO 2003010369 A1 WO2003010369 A1 WO 2003010369A1 JP 0205715 W JP0205715 W JP 0205715W WO 03010369 A1 WO03010369 A1 WO 03010369A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- crystal
- needle
- crystal structure
- oxide
- crystals
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
- C30B1/04—Isothermal recrystallisation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/62—Whiskers or needles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/729—Growing single crystal, e.g. epitaxy, bulk
Definitions
- the present invention relates to an oxide high-temperature superconductor needle-like crystal having almost no defects, that is, almost a perfect crystal of an oxide high-temperature superconductor essential for realizing a superconducting electronic element, and a method for producing the same. Things. Light
- Single crystal oxide high-temperature superconductors have a crystal structure in which conductive layers and non-conductive layers are alternately stacked, and each layer has a unique Josephson bond.
- a single crystal switching device using the intrinsic Josephson effect has been proposed. This new single-crystal switching device can be reduced in size to almost 1/100 compared to the conventional Josephson junction, has a switching speed about 100 times faster, and is expected to operate at a high frequency of THz (terahertz). .
- the needle-shaped crystal of the Bi-2223 crystal structure with a superconducting critical temperature of 110K and much higher than the liquid nitrogen temperature of 77K is higher than the Bi-2212 crystal structure with a superconducting critical temperature of 85K. It is advantageous.
- the needle-shaped crystals that have been grown to date have only the B i -2212 crystal structure, and the growth of needle-shaped crystals having the B i-2223 crystal structure has not been successful. Disclosure of the invention
- the high-temperature oxide superconductor Bi 2 Sr 2 Ca 2 Cu 3 O, 0 (B i-2223) has established a method of producing a needle-like crystal having no defect in the crystal structure, and has obtained a high-quality needle-like crystal. Has not yet been realized.
- the present invention provides an oxide high-temperature superconductor needle-like crystal having a crystal structure of Bi-2223, which is indispensable for realizing a superconducting device element, and having very few defects, and its production.
- the aim is to provide a method.
- the oxide high temperature superconductor acicular crystal the oxide 1 mole of B i 2 Sr 2 Ca 2 Cu 3 O 10 crystal structure, Te0 2 and from 0.2 to 0.8 moles pressure containing the powder molded body C. in 5-100% oxygen atmosphere, and heat treated at 840 ⁇ 890 ° C, B i 2 is grown from the compact S r 2 Ca 2 Cu 3 0 ! .
- a needle-shaped crystal having a crystal structure is provided.
- a method for producing a needle-like crystal having a crystal structure comprising: Bi 2 Sr 2 Ca 2 Cu 30 .
- B i S r Ca in 2 Cu 3 ⁇ 1Q method for producing a needle-like crystals of the crystal structure B i S r Ca 2 Cu 3 ⁇ t. T e 0 2 to 0.2 to 0 to oxide 1 mole of crystal structure. 8 mol, the green compact to 0.1 to 2.0 mol composite containing ⁇ & 0, 5 to 100% oxygen atmosphere at medium, heat treated at 840 ⁇ 890 ° C, B from the shaped body i S r 2 Ca 2 Cu 3 0! . It is characterized by growing needle-like crystals having a crystal structure.
- the present invention relates to an oxide high-temperature superconductor B i 2 Sr 2 Ca 2 Cu 3 O 10 (B i -222
- the present invention is preliminarily B i - produced in 2223 single-phase powder special method of a crystalline structure, acicular Te0 2 powder which allows the growth of crystals, Te_ ⁇ 2 Ca_ ⁇ powders, Oh Rui ( SrCa) 3 Te_ ⁇ powder green compact directly from that is contained in the single-phase powder of 6 B i - is to develop needle-like crystals of 2223 structures.
- This manufacturing method and the needle-like crystal grown by this method are completely new, and a needle-like crystal with a superconducting critical temperature of 110 K was realized.
- the growth of the acicular crystal is promoted as the difference in melting point between the oxide high-temperature superconductor and the parent phase of the charged composition increases. Therefore, it is extremely effective for containing have the Te0 2 to lower the melting point of the matrix phase to the charged composition.
- the needle-like crystal having the B i—2223 crystal structure is B i 2 S r 2 Ca 2 Cus 0 !. Relative oxide to 1 mol, and growth in the case the content of Te_ ⁇ 2 is 0.1 to 0.8 mol, the largest its effect 0.5 moles vicinity.
- the grown needle crystals do not contain Te.
- the needle-like crystal having a Bi—2 2 3 3 crystal structure grows at a heat treatment temperature of 840 to 890 ° C. and an oxygen ratio of 5 to 100% in the atmosphere.
- the optimum conditions are a heat treatment temperature of 860 ° C. and an oxygen ratio of the atmosphere of 10%.
- a powder having the composition of B i -222 3 was prepared by a co-precipitation method.
- the pressure powder compact at 2 0% O 2 in, and 1 0 O h heat treatment at 8 4 5 ° C ⁇ 8 5 0 ° C, B i - 2 2 2 3 give the single phase Peretsuto crystal structure Was.
- the pellets were pulverized in anhydrous alcohol by a ball mill so as not to hydrolyze the pellets, thereby producing a single-phase powder having a Bi-223 crystal structure.
- a part of B i was replaced with Pb (B i Pb) 2 S r z C a 2 C u 30 i. It is necessary to As is already known, the charge composition is described in detail in Bi 1.6-1.8 Pb
- This green compact was heat-treated at 860 ° C. for 100 h in a 10% oxygen atmosphere, and needle-like crystals were grown from the green compact.
- Table 1 shows the green compacts, that is, the crystal structure of the parent phase and the crystal structure of the needle-shaped crystals.
- Bi-2223 crystal ⁇ powder Bi-2223 (Te0 2 + Ca0 ) Bi-2223 From the parent phase of the Bi-2212 crystal structure, needle-shaped crystals of the Bi-2212 crystal structure are grown, and from the parent phase of the Bi-2223 crystal structure, needle-shaped crystals of the Bi-2223 crystal structure are grown. . That is, the crystal structure of the acicular crystal is governed by the crystal structure of the superconductor in the matrix. A single-phase acicular crystal having a Bi-2223 crystal structure can be grown only from a green compact having a Bi-2223 crystal structure.
- the acicular crystal having the B i -2223 crystal structure is B i 2 Sr 2 C a 2 Cu 3 ⁇ ! It grows when the content of (SrCa) 3 TeC is 0.2 to 0.8 mol per 1 mol of the oxidized slime of 0 , and the effect is greatest near 0.5 mol, and the length is 5 to Grow to 7mm.
- the grown needle crystals do not contain Te.
- Needle-like formation of B i -2 2 2 3 crystal structure says that when the oxygen content of the atmosphere is 10%, it grows at a heat treatment temperature of 84-890 ° C and 860 ° C Grows to a length of 9 to 12 mm. Furthermore, at the heat treatment temperature of 860 ° C, which was the best growth, the acicular crystal grew at an oxygen ratio of 5 to 100% in the atmosphere, and became 10 to 12 mm in length at 10%. grow up.
- the optimal conditions for the heat treatment are as follows: temperature 860 ° (:, oxygen ratio of atmosphere is 10%.
- the grown needle-shaped crystals are obtained by X-ray diffraction, electron beam microanalyzer, energy-dispersion spectrometer. The needle-like crystals were all single crystals of the Bi-223 phase and did not contain the element T e. Which lowers the melting point of the parent phase.
- the present invention relates to a needle-like crystal of an oxide high-temperature superconductor close to a perfect crystal and a method for producing the same.
- it is suitable as a THz band high frequency superconducting device.
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/483,562 US7008906B2 (en) | 2001-07-25 | 2002-06-10 | Oxide high-critical temperature superconductor acicular crystal and its production method |
CA002453922A CA2453922C (en) | 2001-07-25 | 2002-06-10 | Oxide high-critical temperature superconductor acicular crystal and method for producing the same |
DE60238328T DE60238328D1 (de) | 2001-07-25 | 2002-06-10 | Nadelförmiger kristall aus oxidsupraleiter mit hoher kritischer temperatur und herstelungsverfahren dafür |
EP02738643A EP1411154B1 (en) | 2001-07-25 | 2002-06-10 | Oxide high-critical temperature superconductor acicular crystal and its production method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001-224741 | 2001-07-25 | ||
JP2001224741A JP4141666B2 (ja) | 2001-07-25 | 2001-07-25 | 酸化物高温超伝導体針状結晶の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003010369A1 true WO2003010369A1 (en) | 2003-02-06 |
Family
ID=19057848
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2002/005715 WO2003010369A1 (en) | 2001-07-25 | 2002-06-10 | Oxide high-critical temperature superconductor acicular crystal and its production method |
Country Status (6)
Country | Link |
---|---|
US (1) | US7008906B2 (ja) |
EP (1) | EP1411154B1 (ja) |
JP (1) | JP4141666B2 (ja) |
CA (1) | CA2453922C (ja) |
DE (1) | DE60238328D1 (ja) |
WO (1) | WO2003010369A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5196368B2 (ja) * | 2008-02-21 | 2013-05-15 | 独立行政法人物質・材料研究機構 | 酸化物超伝導体とその製造方法 |
JP2011233825A (ja) * | 2010-04-30 | 2011-11-17 | National Institute Of Advanced Industrial & Technology | 固有ジョセフソン接合素子、及び、これを用いた量子ビット、超伝導量子干渉素子、テラヘルツ検出器、テラヘルツ発振器、電圧標準装置、ミリ波・サブミリ波受信機、並びに、固有ジョセフソン接合素子の製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0465395A (ja) * | 1990-07-03 | 1992-03-02 | Agency Of Ind Science & Technol | 超電導繊維状単結晶およびその製造方法 |
JPH1192143A (ja) * | 1997-09-17 | 1999-04-06 | Agency Of Ind Science & Technol | 超電導ウィスカーおよびその製造方法 |
-
2001
- 2001-07-25 JP JP2001224741A patent/JP4141666B2/ja not_active Expired - Fee Related
-
2002
- 2002-06-10 US US10/483,562 patent/US7008906B2/en not_active Expired - Fee Related
- 2002-06-10 WO PCT/JP2002/005715 patent/WO2003010369A1/ja active Application Filing
- 2002-06-10 CA CA002453922A patent/CA2453922C/en not_active Expired - Fee Related
- 2002-06-10 DE DE60238328T patent/DE60238328D1/de not_active Expired - Lifetime
- 2002-06-10 EP EP02738643A patent/EP1411154B1/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0465395A (ja) * | 1990-07-03 | 1992-03-02 | Agency Of Ind Science & Technol | 超電導繊維状単結晶およびその製造方法 |
JPH1192143A (ja) * | 1997-09-17 | 1999-04-06 | Agency Of Ind Science & Technol | 超電導ウィスカーおよびその製造方法 |
Non-Patent Citations (3)
Title |
---|
MATSUBARA ICHIRO ET AL.: "Growth of superconducting whiskers in the Bi system", JOURNAL OF CRYSTAL GROWTH, vol. 128, no. 1-4, PART 2, 1 March 1993 (1993-03-01), pages 719 - 724, XP000349447 * |
MATSUBARA ICHIRO ET AL.: "Preparation and critical current density of Bi2Sr2Ca2Cu2O10+x superconducting whiskers", APPLIED PHYSICS LETTERS, vol. 57, no. 23, 3 December 1990 (1990-12-03), pages 2490 - 2491, XP000216294 * |
See also references of EP1411154A4 * |
Also Published As
Publication number | Publication date |
---|---|
EP1411154A4 (en) | 2008-05-28 |
US20040171493A1 (en) | 2004-09-02 |
EP1411154B1 (en) | 2010-11-17 |
EP1411154A1 (en) | 2004-04-21 |
US7008906B2 (en) | 2006-03-07 |
JP2003040698A (ja) | 2003-02-13 |
CA2453922C (en) | 2007-08-07 |
JP4141666B2 (ja) | 2008-08-27 |
DE60238328D1 (de) | 2010-12-30 |
CA2453922A1 (en) | 2003-02-06 |
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