WO2003004987A1 - Element optique pour lithographie optique, et procede d'evaluation y relatif - Google Patents

Element optique pour lithographie optique, et procede d'evaluation y relatif Download PDF

Info

Publication number
WO2003004987A1
WO2003004987A1 PCT/JP2002/006863 JP0206863W WO03004987A1 WO 2003004987 A1 WO2003004987 A1 WO 2003004987A1 JP 0206863 W JP0206863 W JP 0206863W WO 03004987 A1 WO03004987 A1 WO 03004987A1
Authority
WO
WIPO (PCT)
Prior art keywords
optical
optical member
polynomial
components
evaluation method
Prior art date
Application number
PCT/JP2002/006863
Other languages
English (en)
French (fr)
Inventor
Kazumasa Endo
Hiroyuki Hiraiwa
Kazuhiro Nakagawa
Masaaki Mochida
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to EP02743844A priority Critical patent/EP1413870A4/en
Priority to JP2003510913A priority patent/JP4029838B2/ja
Priority to US10/362,193 priority patent/US6829039B2/en
Publication of WO2003004987A1 publication Critical patent/WO2003004987A1/ja

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
PCT/JP2002/006863 2001-07-05 2002-07-05 Element optique pour lithographie optique, et procede d'evaluation y relatif WO2003004987A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP02743844A EP1413870A4 (en) 2001-07-05 2002-07-05 OPTICAL ELEMENT FOR OPTICAL LITHOGRAPHY, AND RELATIVE EVALUATION METHOD
JP2003510913A JP4029838B2 (ja) 2001-07-05 2002-07-05 光リソグラフィー用光学部材とその評価方法
US10/362,193 US6829039B2 (en) 2001-07-05 2002-07-05 Optical member for photolithography and method of evaluating the same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001204221 2001-07-05
JP2001-204221 2001-07-05
JP2002-1045 2002-01-08
JP2002001045 2002-01-08

Publications (1)

Publication Number Publication Date
WO2003004987A1 true WO2003004987A1 (fr) 2003-01-16

Family

ID=26618168

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/006863 WO2003004987A1 (fr) 2001-07-05 2002-07-05 Element optique pour lithographie optique, et procede d'evaluation y relatif

Country Status (4)

Country Link
US (1) US6829039B2 (ja)
EP (1) EP1413870A4 (ja)
JP (1) JP4029838B2 (ja)
WO (1) WO2003004987A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7706074B2 (en) 2004-09-13 2010-04-27 Nikon Corporation Projection optical system, method of manufacturing projection optical system, exposure apparatus, and exposure method
JP2010107880A (ja) * 2008-10-31 2010-05-13 Mitsubishi Electric Corp 光学調整装置
CN102768474A (zh) * 2012-07-20 2012-11-07 中国科学院上海光学精密机械研究所 基于二阶像差模型的投影物镜波像差检测方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4387359B2 (ja) * 2003-09-26 2009-12-16 カール・ツァイス・エスエムティー・アーゲー 光学特性の測定方法、及び波面検出系を備えた投影露光システム
US7883578B2 (en) * 2004-02-23 2011-02-08 Hellma Materials Gmbh & Co. Kg Process for preparing CaF2 lens blanks especially for 193 nm and 157 nm lithography with minimized deffects
DE102004020983A1 (de) * 2004-04-23 2005-11-17 Carl Zeiss Smt Ag Verfahren zur Strukturbelichtung einer lichtempfindlichen Schicht
ES2292296B2 (es) * 2005-04-27 2009-07-24 Universidade De Santiago De Compostela Procedimiento para la generacion de aberraciones opticas de magnitud variable mediante rotacion de componentes opticos y dispositivo para su puesta en practica.
US7826142B2 (en) * 2005-04-29 2010-11-02 Asml Holding N.V. Method for improved optical design using deterministically defined surfaces
US7715952B2 (en) * 2007-09-20 2010-05-11 Tokyo Electron Limited Temperature setting of thermal processing plate using zernike coefficients
JP2009152251A (ja) * 2007-12-18 2009-07-09 Canon Inc 露光装置、露光方法及びデバイス製造方法
DE102008042356A1 (de) * 2008-09-25 2010-04-08 Carl Zeiss Smt Ag Projektionsbelichtungsanlage mit optimierter Justagemöglichkeit
CN102620917A (zh) * 2012-04-11 2012-08-01 长春理工大学 透射式光学元件光致热变形像质分析方法
CN106338523A (zh) * 2016-08-04 2017-01-18 中国科学院长春光学精密机械与物理研究所 一种显微成像景深延拓的方法及显微成像装置
US10436577B2 (en) * 2017-09-21 2019-10-08 Central Iron And Steel Research Institute Full-field statistical and characterizing method of fluid micro-explored strain for alloy microstructure
CN110530530B (zh) * 2018-05-23 2021-01-15 中国科学院长春光学精密机械与物理研究所 一种波前提取算法及采用该算法的剪切干涉仪
US11340531B2 (en) * 2020-07-10 2022-05-24 Taiwan Semiconductor Manufacturing Company, Ltd. Target control in extreme ultraviolet lithography systems using aberration of reflection image

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03225259A (ja) * 1990-01-31 1991-10-04 Suezo Nakatate 屈折率分布、透過波面の測定方法およびこの方法に用いる測定装置
JPH085505A (ja) * 1994-06-16 1996-01-12 Nikon Corp 光リソグラフィー用光学部材及び光学部材の評価方法
JPH11311600A (ja) * 1998-04-28 1999-11-09 Olympus Optical Co Ltd 屈折率分布測定方法及び測定装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000121491A (ja) * 1998-10-20 2000-04-28 Nikon Corp 光学系の評価方法
US6272392B1 (en) * 1998-12-04 2001-08-07 Advanced Micro Devices, Inc. Methodology for extracting effective lens aberrations using a neural network
US6498685B1 (en) * 1999-01-11 2002-12-24 Kenneth C. Johnson Maskless, microlens EUV lithography system
JP2002184667A (ja) * 2000-12-14 2002-06-28 Nikon Corp 補正部材の製造方法、投影光学系の製造方法および露光装置の調整方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03225259A (ja) * 1990-01-31 1991-10-04 Suezo Nakatate 屈折率分布、透過波面の測定方法およびこの方法に用いる測定装置
JPH085505A (ja) * 1994-06-16 1996-01-12 Nikon Corp 光リソグラフィー用光学部材及び光学部材の評価方法
JPH11311600A (ja) * 1998-04-28 1999-11-09 Olympus Optical Co Ltd 屈折率分布測定方法及び測定装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1413870A4 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7706074B2 (en) 2004-09-13 2010-04-27 Nikon Corporation Projection optical system, method of manufacturing projection optical system, exposure apparatus, and exposure method
JP2010107880A (ja) * 2008-10-31 2010-05-13 Mitsubishi Electric Corp 光学調整装置
CN102768474A (zh) * 2012-07-20 2012-11-07 中国科学院上海光学精密机械研究所 基于二阶像差模型的投影物镜波像差检测方法
CN102768474B (zh) * 2012-07-20 2014-04-09 中国科学院上海光学精密机械研究所 基于二阶像差模型的投影物镜波像差检测方法

Also Published As

Publication number Publication date
US6829039B2 (en) 2004-12-07
EP1413870A4 (en) 2006-11-15
JP4029838B2 (ja) 2008-01-09
EP1413870A1 (en) 2004-04-28
JPWO2003004987A1 (ja) 2004-10-28
US20030174300A1 (en) 2003-09-18

Similar Documents

Publication Publication Date Title
WO2003004987A1 (fr) Element optique pour lithographie optique, et procede d'evaluation y relatif
EP2562526B1 (en) Device and method for detecting optical performance of beam shaping element
EP1338913A4 (en) METHOD FOR EVALUATING PICTURE PERFORMANCE
EP1359608A4 (en) OPTICAL PROJECTION SYSTEM AND METHOD FOR PRODUCING THE SAME, EXPOSURE SYSTEM AND METHOD FOR PRODUCING THE SAME, AND PROCESS FOR PRODUCING MICRODISPOSITIVE
EP1670043A4 (en) EXPOSURE DEVICE, EXPOSURE METHOD AND COMPONENT MANUFACTURING METHOD
CA2537546A1 (en) Multi-channel infrared optical phase fraction meter
EP2237010B1 (en) Cutoff wavelength measuring method and optical communication system
WO2007082054A3 (en) Optical signal measurement system
WO2006050029A3 (en) Apochromatic unit-magnification projection optical system
CN102564588A (zh) 采用光纤束分光的垂直入射宽带光谱仪及光学测量系统
EP0653056B1 (en) Spectrometer for lensometer
GB2391310A (en) Gas sensors
WO2018153868A1 (en) Apparatus for optical applications, spectrometer system and method for producing an apparatus for optical applications
WO2007112210A3 (en) Optical design of a particulate measurement system
ATE286248T1 (de) Refraktometer mit schräg gelegenen bragg vergitterungen
US8675194B2 (en) Apparatus for measuring the retroreflectance of materials
CN116858504A (zh) 光轴监测系统
CN104614071B (zh) 一种分光光度计的小型化光路结构及其应用方法
CN100437168C (zh) 一种保偏光纤切趾双光栅的制作方法
JP2003315184A (ja) 光ファイバの残留応力測定装置
FR2825151B1 (fr) Refractometre et methode de mesure de l'indice de refraction
JP6406750B2 (ja) 光ファイバ式計測方法及び光ファイバ式計測装置
WO2006114635A3 (en) Measuring devices and methods employing a dispersive medium in an optical resonator
CN101814954A (zh) 一种光时域反射装置
CN101413825B (zh) 测定光谱仪中杂散光比率的方法及装置

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TN TR TT TZ UA UG US UZ VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LU MC NL PT SE SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

WWE Wipo information: entry into national phase

Ref document number: 10362193

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2003510913

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 2002743844

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 2002743844

Country of ref document: EP

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642