WO2002104073A1 - Plaque chauffante en ceramique - Google Patents

Plaque chauffante en ceramique Download PDF

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Publication number
WO2002104073A1
WO2002104073A1 PCT/JP2001/005200 JP0105200W WO02104073A1 WO 2002104073 A1 WO2002104073 A1 WO 2002104073A1 JP 0105200 W JP0105200 W JP 0105200W WO 02104073 A1 WO02104073 A1 WO 02104073A1
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WO
WIPO (PCT)
Prior art keywords
ceramic
ceramic substrate
insulating layer
heating element
resistance heating
Prior art date
Application number
PCT/JP2001/005200
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English (en)
Japanese (ja)
Inventor
Yasuji Hiramatsu
Yasutaka Ito
Original Assignee
Ibiden Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibiden Co., Ltd. filed Critical Ibiden Co., Ltd.
Priority to PCT/JP2001/005200 priority Critical patent/WO2002104073A1/fr
Publication of WO2002104073A1 publication Critical patent/WO2002104073A1/fr

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
    • H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support

Definitions

  • the present invention relates to a ceramic heater mainly used in the semiconductor industry, and more particularly to a ceramic heater excellent in insulation between circuits of a resistance heating element and uniformity of a heating surface.
  • a typical example of a semiconductor chip is a silicon wafer prepared by slicing a silicon single crystal to a predetermined thickness. Thereafter, it is manufactured by forming various integrated circuits and the like on this silicon wafer.
  • the thickness of the heater plate since it is made of metal, the thickness of the heater plate must be as thick as about 15 mm. This is because, in a thin metal plate, warpage, distortion, and the like are generated due to thermal expansion caused by heating, and the silicon wafer placed on the metal plate is damaged or tilted. However, when the thickness of the heater plate is increased, there is a problem that the weight of the heater increases and the heater becomes bulky.
  • the heating temperature is controlled by changing the voltage or current applied to the heating element.However, the thickness of the metal plate causes the temperature of the heater plate to quickly change with changes in voltage or current. There was also a problem that it was difficult to control the temperature without following.
  • Japanese Patent Application Laid-Open No. 11-43030 discloses a ceramic ceramic heater.
  • a heater using a ceramic or a nitride ceramic is disclosed.
  • the thickness of the heater plate can be reduced, and good results have also been obtained with respect to the temperature followability of the heater plate to changes in applied voltage or current.
  • the carbide ceramic usually contains impurities, sintering aids, and the like, and due to these, the carbide ceramic often has conductivity. For this reason, even if a resistance heating element is provided on the surface of such a conductive carbide ceramic, the circuits will be short-circuited and the temperature cannot be controlled.
  • the inventors of the present invention have conducted intensive studies to solve the above-mentioned problems. As a result, an insulating layer having a higher volume resistivity than that of the ceramic substrate was first provided on one surface of the ceramic substrate, and a resistive heating was formed thereon. By forming a body, we have developed a ceramic heater that can prevent a short circuit of a resistance heating body.
  • Fig. 5 is a partially enlarged cross-sectional view schematically showing an example of the ceramic heater developed earlier.
  • an insulating layer 38 is provided on the bottom surface of the ceramic substrate 31, and a resistance heating element 12 covered with a metal coating layer 12 a is formed on the insulating layer 38. Therefore, even if the ceramic substrate 31 itself is conductive, Body 12 does not short-circuit and functions well as a heater. Further, even if the volume resistivity of the ceramic substrate 31 itself decreases at a high temperature, the volume resistivity of the insulating layer 38 in the operating temperature range is higher than that of the ceramic substrate 31, so that the resistance is lower. The short circuit of the heating element 12 can be prevented.
  • the ceramic heater 30 does not need to use particularly expensive ceramics, and can be used as a heater even if it is a conductive ceramic having a high thermal conductivity. Therefore, the ceramic heater 30 previously developed by the present inventors has almost solved the above problem.
  • the temperature varies on the heating surface 31a, and as a result, as shown in FIG. 5, the support pins 2 provided in the concave portions 25 of the ceramic substrate 31 are provided.
  • the object to be heated such as the silicon wafer 19 supported by being spaced apart from the ceramic substrate 31, was not uniformly heated by being supported by 2. That is, there was room for improvement in the heat uniformity on the heating surface 31a.
  • withstand voltage, heat cycle resistance, and thermal shock resistance also needed to be further improved. According to the study of the present inventors, these characteristics are closely related to the surface roughness of the ceramic substrate, and if the surface roughness is too large, the thickness of the insulating layer varies. It was found that insulation rupture tends to occur in thin parts, and that the thickness of the insulating layer varies depending on the location, causing stress due to heat cycles and thermal shock, and cracks in the insulating layer. Was.
  • the present inventors have conducted intensive studies to solve the above problem, and as a result, by setting the surface roughness of the ceramic substrate surface based on JISB 0601 to R a ⁇ 10 or less, The present inventors have found that it is possible to improve the heat conductivity between the insulating layer and the ceramic substrate, make the temperature of the heating surface uniform, and improve the withstand voltage of the ceramic heater.
  • the present invention is a further improvement of the characteristics of the above ceramic heater, It improves the temperature uniformity of the heated surface, insulation, heat cycle resistance, and thermal shock resistance.
  • the surface roughness of the ceramic substrate surface based on JISB 061 is Ra ⁇ 10 ⁇ m, and the surface of the ceramic substrate has a higher volume resistivity than the ceramic substrate.
  • An insulating layer having a resistance heating element is formed on the insulating layer.
  • the surface roughness of the interface between the ceramic substrate and the insulating layer is reduced to R a ⁇ l O ⁇ m, and the contact area between the ceramic substrate and the insulating layer is small.
  • the crystal lattice is not integrated, so that the transfer of heat is prevented.
  • excellent heat transfer characteristics are obtained. Conceivable.
  • the thickness is further reduced to R a ⁇ S / zm or less, the surface roughness is reduced, so that the thickness of the insulating layer does not vary. Due to the difference, a problem can be prevented if a stress is generated by the heat cycle and the thermal shock and a crack occurs in the insulating layer itself.
  • the resistance heating element since the insulating layer is formed between the resistance heating element and the ceramic substrate, the resistance heating element does not short-circuit even when the ceramic substrate itself has conductivity. It functions well as a heater, and even if the ceramic substrate has a low volume resistivity at high temperatures, the insulating layer has a higher volume resistivity in the operating temperature region than the ceramic substrate. The short circuit of the resistance heating element can be prevented. Furthermore, this ceramic heater does not require the use of particularly expensive ceramics, and can be used as a heater even with conductive ceramics having high thermal conductivity.
  • the ceramic substrate is made of a carbide ceramic or a nitride ceramic
  • the insulating layer is made of an oxide ceramic
  • the volume resistivity of nitride ceramics tends to decrease at high temperatures due to oxygen solid solution, etc.
  • the carbide ceramic has conductivity unless it is particularly purified, and a resistance heating element cannot be formed on the substrate surface as it is.
  • an insulating layer made of oxide ceramic on the surface of a ceramic substrate made of such a material, a short circuit between circuits can be prevented, and the circuit can function as a heater. .
  • Ra is large, but in the present invention, contrary to this common sense, by reducing Ra, the uniformity of the heated surface and the heat cycle resistance are improved.
  • the thermal shock resistance could be improved. .
  • the optimum surface roughness is 0.0 1 ⁇ Ra ⁇ 1 Atm.
  • the method for forming such a roughened surface is not particularly limited, and examples thereof include a sand blasting process in which particles made of alumina, zirconium, sic, etc. are sprayed on the surface of the ceramic substrate.
  • a method may be used in which the surface of the ceramic substrate is polished using a diamond grindstone of # 50 to # 800 or polished using a diamond slurry, and then the above sand blast treatment is performed.
  • the opposite side of the ceramic substrate on which the resistance heating element is formed is preferably a heating surface.
  • the opposite side of the surface on which the resistance heating element is formed can be used as the heating surface, heat propagates while diffusing from the surface on which the resistance heating element is formed to the heating surface, and the resistance heating element generates heat on the heating surface. Temperature distribution close to the body pattern is unlikely to occur.
  • the thickness of the insulating layer is desirably 0.1 to 1000 ⁇ .
  • the thickness of the above-mentioned insulating layer is less than 0.1 ⁇ m, it is not possible to secure insulation, while if the thickness of the above-mentioned insulating layer exceeds ⁇ ⁇ ⁇ ⁇ , the resistance heating element ceramic This is because heat transfer to the substrate is hindered.
  • the volume resistivity of the insulating layer be at least 10 times (but at the same measurement temperature) the volume resistivity of the ceramic substrate.
  • the volume resistivity of the insulating layer is preferably 10 6 to: L 0 18 ⁇ ⁇ cm at 25 ° C. If the temperature is less than 10 6 ⁇ ⁇ cm at 25 ° C, it does not function as an insulation layer when the temperature rises, and the insulation layer with a volume resistivity exceeding 10 18 ⁇ ⁇ cm has poor thermal conductivity. Because.
  • the volume resistivity of aluminum nitride at 400 ° C, a 10 9 ⁇ ⁇ cm, at the same temperature, the volume resistivity of alumina is l OWQ 'cm.
  • the volume resistivity of silicon carbide is 10 3 ⁇ ⁇ cm, and at the same temperature, the volume resistivity of silica is 10 14 ⁇ ⁇ cm.
  • FIG. 1 is a bottom view schematically showing one example of the ceramic heater of the present invention.
  • FIG. 2 is a partially enlarged sectional view of the ceramic heater shown in FIG.
  • FIG. 3 is a partially enlarged sectional view schematically showing another example of the ceramic heater of the present invention.
  • FIGS. 4A to 4D are cross-sectional views schematically showing a part of the manufacturing process of the ceramic heater. .
  • FIG. 5 is a partially enlarged cross-sectional view schematically showing an example of the ceramic heater developed earlier. Explanation of reference numerals
  • the ceramic heater of the present invention is characterized in that the surface roughness of the ceramic substrate surface according to JISB 061 is Ra ⁇ 10 ⁇ , and the ceramic substrate has An insulating layer having a higher volume resistivity than the substrate is formed, and a resistance heating element is formed on the insulating layer.
  • FIG. 1 is a bottom view schematically showing one embodiment of the ceramic heater of the present invention
  • FIG. 2 is a partially enlarged sectional view of the ceramic heater shown in FIG.
  • the ceramic substrate 11 is formed in a disk shape, and a roughened surface 18 a is formed on the bottom surface of the ceramic substrate 11.
  • An insulating layer 18 is formed on a.
  • a resistance heating element 12 composed of a plurality of circuits is formed in a concentric pattern, and these resistance heating elements 12 are formed by two concentric circles close to each other. As a set of circuits, they are connected to form a single line.
  • a metal coating layer 12a is provided on the surface of the resistance heating element 12 to prevent oxidation or the like of the resistance heating element 12, and the resistance heating element formed with the metal coating layer 12a is provided.
  • the body 12 is connected to an external terminal 13 via a solder layer 17.
  • a bottomed hole 14 is provided on the bottom surface of the ceramic substrate 11 having the insulating layer 18, and a temperature measuring element (not shown) such as a thermocouple is inserted into the bottomed hole 14. , It is sealed with a heat-resistant adhesive.
  • a through hole 15 is provided in the ceramic substrate 11.
  • the silicon wafer 19 is inserted by inserting lifter pins 16 into the through hole 15 as shown in FIG. 2.
  • the silicon wafer 19 can be received from the transfer machine, or the silicon wafer 19 can be placed on the heating surface 11 a of the ceramic substrate 11.
  • the wafer can be placed and heated, or can be supported and heated while the silicon wafer 19 is separated from the heating surface 1 la by about 50 to 2000 ⁇ m. .
  • a through hole or a concave portion 25 is provided in the ceramic substrate 21, and a spire or hemispherical support pin 22 has a tip in the through hole or the concave portion 25.
  • the resistance heating element 12 is divided into at least two or more circuits. This is because, by dividing the circuit, the power supplied to each circuit can be changed, and the temperature of the heating surface 11a can be adjusted.
  • the ceramic heater of the present invention since the insulating layer is provided between the ceramic substrate and the resistance heating element, the ceramic substrate itself has high conductivity at room temperature, or the resistance decreases in a high temperature region. However, it can function as a heater. In addition, since a roughened surface is formed between the ceramic substrate and the insulating layer, heat reflection at the interface is small, heat conductivity between the insulating layer and the ceramic substrate is improved, and the resistance heating element The heat of the semiconductor substrate is favorably propagated through the ceramic substrate, so that there is no temperature variation on the heating surface of the ceramic substrate. Therefore, an object to be heated such as a silicon wafer can be heated to a uniform temperature.
  • metal nitride ceramic For example, aluminum nitride, silicon nitride, boron nitride, and the like.
  • carbide ceramic include metal carbide ceramics, for example, silicon carbide, zirconium carbide, tantalum carbide, tungsten carbide, and the like.
  • the ceramic substrate contain a sintering aid.
  • a sintering aid for aluminum nitride alkali metal oxides, alkaline earth metal oxides, rare earth oxides, and the like can be used.
  • R b 2 ⁇ and the like are preferable.
  • the content of these sintering aids is preferably 0.1 to 20% by weight.
  • examples of the sintering aid include B, C, and AIN.
  • oxide ceramic used as the insulating layer in the present invention examples include silica, alumina, mullite, cordierite, and beryllia. These ceramics may be used alone or in combination of two or more. The use of oxidized ceramics is advantageous because the resistance heating element is easily fixed.
  • an insulating layer made of these materials for example, using a sol solution obtained by hydrolyzing alkoxide, forming a coating layer on a roughened surface of the ceramic substrate surface by spin coating or the like, followed by drying and firing Method, sputtering method, CVD method and the like.
  • a glass powder paste may be applied and baked at 500 to 100 ° C.
  • the ceramic substrate contains 5 to 500 carbon atoms.
  • the ceramic substrate By containing carbon, the ceramic substrate can be blackened, and radiant heat can be sufficiently used when used as a heater.
  • the carbon may be amorphous or crystalline. When amorphous carbon is used, a decrease in volume resistivity at high temperatures can be prevented, and when a crystalline material is used, a decrease in thermal conductivity at high temperatures can be prevented. Because. Therefore, depending on the application, crystalline carbon and non-crystalline carbon You may use together both of crystalline carbon. Further, the content of carbon is more preferably from 50 to 2000 ppm. However, when a conductor layer such as an electrode is not formed inside the ceramic substrate p, the conductivity is not so limited, so that the carbon content may be considerably increased.
  • the carbon When carbon is contained in the ceramic substrate, it is desirable that the carbon be contained so that the brightness becomes N6 or less as a value based on the provisions of JIS Z8721. This is because a material having such a lightness is excellent in radiant heat and concealing property.
  • the lightness N is defined as 0, where the ideal black lightness is 0, and the ideal white lightness is 10, and the brightness of the color is between these black lightness and white lightness.
  • Each color is divided into 10 so as to make the perception of a uniform rate, and displayed with the symbols NO to N10.
  • the actual measurement of the lightness is performed by comparing with the color chart corresponding to N0 to N10. In this case, the first decimal place is 0 or 5.
  • the thickness of the ceramic substrate of the present invention is preferably 25 mm or less, more preferably 5 mm or less.
  • the thickness of the ceramic substrate exceeds 25 mm, the heat capacity of the ceramic substrate increases, and the temperature following ability of the ceramic substrate is reduced. Note that the thickness of the ceramic substrate is desirably a value exceeding 1.5 mm.
  • the diameter of the ceramic substrate is preferably 200 mm or more, and more preferably 12 inches (300 mm) or more. This is because silicon wafers having a large diameter, for example, 12 inches or more, will be the mainstream of next-generation semiconductor wafers.
  • the ceramic heater of the present invention is desirably used at 100 ° C. or higher, and most preferably at 200 ° C. or higher.
  • the resistance heating element is preferably made of a metal such as a noble metal (gold, silver, platinum, palladium), lead, tungsten, molybdenum, nickel, or a conductive ceramic such as a carbide of tungsten or molybdenum. This is because the resistance value can be increased, the thickness itself can be increased for the purpose of preventing disconnection, etc., and it is difficult to be oxidized and the thermal conductivity is not easily reduced. These may be used alone or in combination of two or more.
  • a noble metal gold, silver, platinum, palladium
  • lead tungsten
  • molybdenum nickel
  • a conductive ceramic such as a carbide of tungsten or molybdenum
  • the resistance heating element needs to make the temperature of the entire ceramic substrate uniform. It is preferable to use a concentric pattern as shown in FIG. 1 or a combination of a concentric pattern and a bent line pattern as shown in FIG.
  • the thickness of the resistance heating element is
  • ⁇ 50 ⁇ is desirable, and the width is preferably 0.5-20 mm.
  • the resistance value can be changed by changing the thickness and width of the resistance heating element, but the above range is the most practical.
  • the resistance value of the resistance heating element becomes thinner and becomes larger as it becomes thinner.
  • the resistance heating element may have a cross section of any of a square, an ellipse, a spindle, and a spheroid, but is desirably flat. This is because the flattened surface is easier to radiate heat toward the heated surface, so that the amount of heat transmitted to the heated surface can be increased and the temperature distribution on the heated surface is difficult to achieve. Note that the resistance heating element may have a spiral shape.
  • a conductor paste containing metal or conductive ceramic In order to form a resistance heating element on the insulating layer, it is preferable to use a conductor paste containing metal or conductive ceramic.
  • a resistive heating element is formed by forming a paste layer and firing.
  • the conductive paste is not particularly limited, but preferably contains a resin, a solvent, a thickener, etc. in addition to containing metal particles or conductive ceramic particles to secure conductivity.
  • the material of the metal particles and the conductive ceramic particles include those described above.
  • the metal particles or conductive ceramic particles preferably have a particle size of 0.1 to 100 ⁇ m. If it is too small, less than 0.1 m, it is liable to be oxidized, while if it exceeds 100 ⁇ , sintering becomes difficult and the resistance value becomes large.
  • the shape of the metal particles may be spherical or scaly. When these metal particles are used, they may be a mixture of the sphere and the flakes. When the metal particles are flakes or a mixture of spheres and flakes, the metal oxide between the metal particles is easily retained, and the adhesion between the resistance heating element and the insulating layer is ensured. This is advantageous because the resistance value can be increased.
  • the resin used for the conductor paste for example, acrylic resin, epoxy resin Resin, phenolic resin and the like.
  • the solvent include isopropyl alcohol and the like.
  • the thickener include cellulose and the like.
  • the metal oxide for example, lead oxide, zinc oxide, silica, boron oxide (B 2 0 3), alumina, even without less selected from the group consisting of yttria and titania one is preferred.
  • the adhesion to the insulating layer can be particularly improved.
  • the addition amount of the metal oxide to the metal particles is preferably from 0.1% by weight to less than 10% by weight. Further, when the resistance heating element is formed using the conductor paste having such a configuration, the area resistivity is preferably 1 to 45 ⁇ .
  • the sheet resistivity exceeds 45 ⁇
  • the amount of heat generated increases with the applied voltage. This is because it is difficult to control the amount of heat generated by a ceramic heater provided with a resistance heating element on the surface. If the addition amount of the metal oxide is 10% by weight or more, the area resistivity exceeds 5 5 ⁇ opening, and the calorific value becomes too large, so that the temperature control becomes difficult and the temperature distribution becomes difficult. Uniformity decreases.
  • a metal coating layer is formed on the surface of the resistance heating element. This is to prevent the internal metal sintered body from being oxidized to change the resistance value.
  • the thickness of the metal coating layer to be formed is preferably from 0.1 to 10 ⁇ .
  • the metal used for forming the metal coating layer is not particularly limited as long as it is a non-oxidizing metal, and specific examples thereof include gold, silver, palladium, platinum, and nickel. These may be used alone or in combination of two or more. Of these, nickel is preferred.
  • a bottomed hole 14 is provided in the bottom surface of the ceramic substrate, a temperature measuring element is inserted and fixed in the bottomed hole 14, and the temperature of the ceramic substrate 11 is measured. It is desirable to control the temperature of the ceramic substrate 11 based on this temperature.
  • the temperature measuring element used is not particularly limited, and examples thereof include a thermocouple.
  • the size of the junction between the thermocouple and the wiring is preferably the same as or larger than the wire diameter of each wiring, and 0.5 mm or less. With such a configuration, the heat capacity of the junction is reduced, and the temperature is accurately and quickly converted to a current value. For this reason, the temperature controllability is improved, and the temperature distribution on the heated surface of the wafer is reduced.
  • thermocouple examples include K-type, R-type, B-type, S-type, E-type, J-type, and T-type thermocouples as described in JIS-C-162 (1980). It is better to name a pair.
  • the temperature measuring element may be adhered to the bottom of the bottomed hole 14 using a gold solder, a silver solder, or the like. And the above two methods may be used in combination.
  • thermosetting resin examples include a thermosetting resin.
  • thermosetting resins an epoxy resin, a polyimide resin, a bismaleimide-triazine resin, and the like are exemplified. Is preferred. These heat-resistant resins may be used alone or in combination of two or more.
  • gold brazing for example, 3 7-8 0.5 wt% of A u and 6 3-1 9.5 wt 0/0 alloy consisting of C u of eight 1.5 to 8 2.5 by weight 0/0 of a u and 1 8.5 to 1 7. alloy consisting of 5 wt% of N i and the like. These have a melting temperature of 900 ° C. or higher and are difficult to melt even in a high temperature region.
  • Examples of the silver solder include those of the Ag—Cu type.
  • the ceramic heater of the present invention has been described. If the ceramic substrate itself has a relatively large volume resistivity and short-circuiting of the electrodes and the like provided inside is unlikely to occur, a resistance heating element is provided on the surface of the ceramic substrate. At the same time, by providing electrostatic electrodes inside the ceramic substrate, it can be used as an electrostatic chuck.
  • a wafer prober may be provided by providing a resistance heating element on the surface of the ceramic substrate, providing a chuck top conductor layer on the surface of the ceramic substrate, and providing a guard electrode or a ground electrode inside the ceramic substrate.
  • FIGS. 4 (a) to 4 (d) are cross-sectional views schematically showing a method of manufacturing a ceramic heater having a resistance heating element on the bottom surface of a ceramic substrate.
  • a slurry is prepared by mixing a sintering aid such as yttria and boron and a binder as necessary with ceramic powder such as aluminum nitride and silicon carbide, and then the slurry is granulated by a method such as spray drying. The granules are placed in a mold or the like and pressed to form a plate or the like to produce a green body. At the time of slurry preparation, amorphous or crystalline carbon may be added.
  • a sintering aid such as yttria and boron and a binder as necessary
  • ceramic powder such as aluminum nitride and silicon carbide
  • this formed body is heated, fired and sintered to produce a ceramic plate, and then processed into a predetermined shape to produce a ceramic substrate 11. It is good also as a shape which can be used.
  • Heating and sintering may be performed at a temperature equal to or higher than the sintering temperature. However, in the case of nitride ceramics and carbide ceramics, it is 100 to 2,500. C. After this, Sandplast etc. The surface roughness of the bottom surface is adjusted by using to form a roughened surface 18a.
  • a solution of alumina sol, silica sol, or the like prepared by hydrolyzing an alkoxide is applied to the bottom surface of the ceramic substrate 11 by spin coating, followed by drying and firing to form the insulating layer 18.
  • the insulating layer 18 may be formed by a sputtering method or a CVD method, and the surface may be oxidized by heating the ceramic substrate in an oxidizing atmosphere to form the insulating layer 18 (FIG. 4 (a )).
  • a through hole 15 for inserting a lifter pin for supporting a silicon wafer, a bottomed hole 14 for embedding a temperature measuring element such as a thermocouple, etc. are formed in the ceramic substrate. .
  • the conductor paste is a highly viscous fluid composed of metal particles, resin, and a solvent.
  • the conductor paste is printed on a portion where the resistance heating element is to be provided by screen printing or the like, thereby forming a conductor paste layer.
  • the resistance heating element needs to keep the entire temperature of the ceramic substrate at a uniform temperature, for example, a force that forms a concentric circle as shown in Fig. 1 'or a pattern that combines a concentric circle and a bent line It is preferable to print on the paper.
  • the conductive paste layer is preferably formed so that the cross section of the resistance heating element 12 after firing has a rectangular and flat shape.
  • the conductor paste layer printed on the insulating layer 18 provided on the bottom surface of the ceramic substrate 11 is heated and baked to remove the resin and solvent, and the metal particles are sintered and baked on the bottom surface of the ceramic substrate 11 Then, a resistance heating element 12 is formed (FIG. 4 (b)).
  • the heating and firing temperature is preferably from 500 to 100 ° C.
  • the metal oxide is added to the conductive paste, the metal particles, the insulating layer and the metal oxide are sintered and integrated, so that the adhesion between the resistance heating element and the insulating layer is improved. I do.
  • Metal coating layer 12 a is formed by electrolytic plating, electroless plating, sputtering, etc. Although electroless plating is the most suitable for mass production (Fig. 4 (c)).
  • An external terminal 13 for connection to a power source is connected to an end of the circuit of the resistance heating element 12 via a solder layer 17 made of tin-lead solder (FIG. 4 (d)).
  • the connection may be made using a gold solder or a silver solder.
  • a thermocouple (not shown) is inserted into the bottomed hole 14 and sealed with a heat-resistant resin such as polyimide or ceramic to complete the manufacture of the ceramic heater 10.
  • an electrostatic electrode may be provided inside the ceramic substrate when manufacturing the ceramic heater.
  • An electrostatic chuck can be manufactured, and a wafer prober can be manufactured by providing a chuck top conductor layer on a heating surface and providing a guard electrode and a ground electrode inside a ceramic substrate.
  • a ceramic substrate was manufactured using granules containing ceramic powder, but a green sheet was prepared using the ceramic powder, a binder, a solvent, and the like. Substrates may be manufactured. When electrodes and the like are provided inside, the electrodes and the like can be formed relatively easily by this method.
  • a disk-shaped body having a diameter of 21 Omm was cut out from the surface of the plate-shaped body to obtain a ceramic substrate 11.
  • a conductor paste was printed on the bottom surface of the ceramic substrate 11 having the insulating layer 18 by screen printing.
  • the printing pattern was a concentric pattern as shown in FIG.
  • the conductor paste is a silver-lead paste.
  • silver For 100 parts by weight of silver, lead oxide (5% by weight), zinc oxide (55% by weight), silica (10% by weight), and boron oxide (25% by weight) ) And alumina (5% by weight).
  • the silver particles had a mean particle size of 4. and were scaly.
  • the ceramic substrate 11 on which the conductor paste is printed is heated and baked at 780 ° C. to sinter the silver and lead in the conductor paste and bake them on the sintered body to form the resistance heating element 12.
  • Silver-lead resistance heating element 12 has thickness was 5 / zm, the width was 2.4 mm, and the sheet resistivity was 7.7 ⁇ .
  • an electroless nickel consisting of an aqueous solution containing nickel sulfate 80 gZl, sodium hypophosphite 24 gZ1, sodium acetate 12 g / l, boric acid 8 g / l, and ammonium chloride 6 g / 1.
  • the ceramic substrate 11 prepared in the above (8) was immersed in the plating bath to deposit a 1 ⁇ m-thick metal coating layer 12a (nickel layer) on the surface of the silver-lead lead resistance heating element. (See Fig. 4 (c)).
  • a silver-lead solder paste (Tanaka Kikinzoku) was printed on the end of the resistance heating element 12 (circuit) by screen printing to form a solder base layer. .
  • the external terminal 13 made of Kovar is placed on the solder paste layer, and heated and reflowed at 420 ° C., and the end of the resistance heating element 12 and the external terminal 13 are connected via the solder layer 17. Connected (see Fig. 4 (d)).
  • thermocouple for temperature control was inserted into the bottomed hole 14, and a ceramic adhesive (Alon ceramic manufactured by Toa Gosei) was embedded and fixed to obtain a ceramic heater 10.
  • the heater was manufactured.
  • Example 2 On this bottom surface, the sol solution used in Example 1 was applied by a spin coating method, dried and fired to form a SiO 2 film having a thickness of 2 / zm. Next, the ceramic substrate 11 was drilled to form a through hole for inserting a lifter pin and a bottomed hole (diameter: 1. lmm, depth: 2 mm) for embedding a thermocouple.
  • a conductor paste was printed on the bottom surface of the ceramic substrate 11 obtained in (4) by screen printing.
  • the print pattern was concentric as shown in Fig. 1.
  • This conductor paste is a silver-lead paste.
  • silver For 100 parts by weight of silver, lead oxide (5% by weight), zinc oxide (55% by weight), silica (10% by weight), and boron oxide (25% by weight) It contained 7.5 parts by weight of a metal oxide composed of alumina and alumina (5% by weight).
  • the silver particles had a mean particle size of 4.5 ⁇ and were scaly.
  • the ceramic substrate 11 on which the conductor paste is printed is heated and fired at 780 ° C to sinter silver and lead in the conductor paste and to bake the sintered body into a sintered body.
  • An antipyretic element l2 was formed.
  • the silver-lead lead resistance heating element 12 had a thickness of 5 ⁇ m, a width of 2.4 mm, and a sheet resistivity of 7.7 ⁇ / port.
  • electroless nickel consisting of an aqueous solution containing nickel sulfate 80 gZl, sodium hypophosphite 24 gZl, sodium acetate 12 gZ1, boric acid 8 g / 1, and ammonium chloride 6 g / 1
  • the sintered body prepared in (5) above was immersed in the plating bath to deposit a 1 ⁇ m thick coating layer 12a (Eckel layer) on the surface of the silver-lead lead resistance heating element.
  • silver-lead solder paste (made by Tanaka Kikinzoku) is printed on the end of the resistance heating element 1 (circuit) by screen printing to form a solder paste layer. Formed.
  • the external terminal 13 made of Kopearl is placed on the solder paste layer, and heated and reflowed at 420 ° C., and the end of the resistance heating element 12 and the external terminal are passed through the solder layer 17. 1 and 3 were connected.
  • thermocouple for temperature control was inserted into the bottomed hole 14, and a ceramic adhesive (Toron Gosei Aron Ceramic) was embedded and fixed to obtain a ceramic heater.
  • a ceramic heater made of silicon carbide was manufactured in the same manner as in Example 1 except that the ceramic substrate was not provided with a roughened surface and an insulating layer composed of a Sio 2 film.
  • the temperature was raised to 30 ° C, and the difference between the maximum temperature and the minimum temperature of the heating surface of the ceramic substrate was measured using Thermoviewer (Nihon Datum Corporation). It was measured by IR- 16-2 0 1 2 0 0 12).
  • the temperature rises rapidly to 300 ° C (thermal shock: TS) to check for cracks.
  • the heat cycle (TC) was repeated 100,000 times in a temperature range of 25 to 300 ° C. to check for the occurrence of cracks.
  • Temperature difference of heated surface Indicates the temperature difference between the maximum temperature and the minimum temperature of the heated surface.
  • the ceramic heater of the present invention adjusts the surface roughness of the ceramic substrate surface based on JISB 0601 to R a ⁇ l ⁇ or less. It improves the thermal conductivity between the ceramic substrate and the surface of the heater, makes the temperature of the heating surface uniform, and allows the ceramic heater to function well. In addition, the insulation, heat cycle resistance, and thermal shock resistance of the ceramic heater Can be improved.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Surface Heating Bodies (AREA)
  • Resistance Heating (AREA)

Abstract

L'invention porte sur une plaque chauffante en céramique capable d'empêcher le court-circuit d'un élément de chauffage par résistance et d'obtenir une répartition de température égale sur une surface de chauffage. Cette plaque chauffante en céramique se caractérise par le fait que l'élément de chauffage par résistance est installé à la surface ou dans un substrat en céramique, et que la surface d'un substrat en céramique possède une rugosité de surface de Ra < 10νm mesurée conformément avec JIS B 0601 et comporte une couche isolante dont la résistivité transversale est plus élevée que celle du substrat en céramique, et que l'élément de chauffage par résistance est formé sur la couche isolante.
PCT/JP2001/005200 2001-06-19 2001-06-19 Plaque chauffante en ceramique WO2002104073A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2001/005200 WO2002104073A1 (fr) 2001-06-19 2001-06-19 Plaque chauffante en ceramique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2001/005200 WO2002104073A1 (fr) 2001-06-19 2001-06-19 Plaque chauffante en ceramique

Publications (1)

Publication Number Publication Date
WO2002104073A1 true WO2002104073A1 (fr) 2002-12-27

Family

ID=11737453

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/005200 WO2002104073A1 (fr) 2001-06-19 2001-06-19 Plaque chauffante en ceramique

Country Status (1)

Country Link
WO (1) WO2002104073A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH025392A (ja) * 1987-11-24 1990-01-10 Philips Gloeilampenfab:Nv ガラス―セラミック加熱素子及びその製造方法
JPH0764425A (ja) * 1993-08-31 1995-03-10 Kyocera Corp 画像形成装置
JPH1140330A (ja) * 1997-07-19 1999-02-12 Ibiden Co Ltd ヒーターおよびその製造方法
JP2001210450A (ja) * 2000-01-25 2001-08-03 Kyocera Corp ウエハ加熱装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH025392A (ja) * 1987-11-24 1990-01-10 Philips Gloeilampenfab:Nv ガラス―セラミック加熱素子及びその製造方法
JPH0764425A (ja) * 1993-08-31 1995-03-10 Kyocera Corp 画像形成装置
JPH1140330A (ja) * 1997-07-19 1999-02-12 Ibiden Co Ltd ヒーターおよびその製造方法
JP2001210450A (ja) * 2000-01-25 2001-08-03 Kyocera Corp ウエハ加熱装置

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