Classifications

• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
  • C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
• • A—HUMAN NECESSITIES
  • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
  • A61L—METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
  • A61L27/00—Materials for grafts or prostheses or for coating grafts or prostheses
  • A61L27/28—Materials for coating prostheses
  • A61L27/34—Macromolecular materials
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
  • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
  • C08J7/04—Coating
  • C08J7/0427—Coating with only one layer of a composition containing a polymer binder
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
  • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
  • C08J7/04—Coating
  • C08J7/056—Forming hydrophilic coatings
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05D1/00—Processes for applying liquids or other fluent materials
  • B05D1/60—Deposition of organic layers from vapour phase
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05D2201/00—Polymeric substrate or laminate
  • B05D2201/02—Polymeric substrate
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
  • B05D3/14—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by electrical means
  • B05D3/141—Plasma treatment
  • B05D3/145—After-treatment
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
  • C08J2483/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers

Definitions

• the present invention relates to a method of coating a low surface energy substrate.
• plasma treatment techniques to modify substrate surfaces is well known; in general, a substrate is treated by placing it within a reactor vessel and subjecting it to a plasma discharge. The effect on the surface depends largely upon the gaseous material present within the reactor during the plasma discharge.
• plasma treatment may activate species on the substrate surface which augment adhesion of the substrate with other materials, or deposition of materials onto the substrate surface.
• Tailored surface properties are required in a broad range of applications including biocompatibility, oil and fuel resistance, adhesion, optical and barrier properties.
• Polymeric materials often have ideal bulk, mechanical, processing and cost qualities, but do not always have the required surface properties.
• Reactive silanes have been widely used to modify highly hydroxylated mineral and metal surfaces. However, because of their low surface energy and chemical inertness, polymeric surfaces are significantly less likely to be susceptible to wetting adhesion or reactive grafting. There are many examples of oxidative treatments for activating plastic surfaces prior to printing, laminating, adhering or grafting.
• Corona discharge treatment is one of the most commonly used methods for activating a plastic surface prior to forming an adhesive bond.
• a corona discharge is typically produced by applying a high voltage (approximately 5 to 10 kV) relatively high frequency (e.g. 10kHz) signal to electrodes in air at atmospheric pressure.
• a high voltage approximately 5 to 10 kV
• relatively high frequency e.g. 10kHz
• Corona discharge treatment does have the advantage of operating at atmospheric pressure
• corona discharges are produced from point sources, and as such produce localised energetic discharges, which are commonly known as streamers. The production of localised energetic discharges often result in a non-uniform treatment of the substrate.
• EP 0978324 describes the use of oxidative low pressure glow discharge plasma to activate plastic surfaces prior to grafting gaseous organosilicon reagents on to the plastic surfaces to enhance biocompatibility.
• the most preferred organosilicon reagents are in particular organosilanes of the formula:
• each group R! is independently selected from the group consisting of hydrogen or optionally substituted alkenyl; each group R ⁇ is independently selected from an optionally substituted alkyl group of 1 to 20 carbon atoms; or a group (OR ⁇ ) or (OSiR ⁇ 3 ), where each
• R3 is independently an optionally substituted alkyl group of 1 to 20 carbon atoms; n is an integer of 1 to 3; m is an integer of 1 to 3 and n + m is 4; and organosiloxanes of the structure (II)
• each R* and R ⁇ are as defined above, each group R ⁇ is independently selected from the group consisting of hydrogen, optionally substituted alkenyl groups; optionally substituted alkyl groups of 1 to 20 carbon atoms and aryl groups, with the proviso that at least one R! or R ⁇ group per molecule is an unsubstituted alkenyl group or a hydrogen; a is 0, 1, 2, or 3 and b is 0, 1, 2, or 3,x is 0 or a positive integer.
• plasma surface treatments require the substrate to be under conditions of reduced pressure, and hence require a vacuum chamber.
• Disilane has been used as a reactant in prior art applications for example in the preparation of tungsten suicide films as described in EP 0256337, nitride films as described in EP0935284, silicon dioxide coatings as described in US 5098865 and silicon nitride coatings in the semi-conductor chip market.
• Halosilanes and organohalosilanes are the building-blocks from which silicone polymers are produced. Halosilanes and organohalosilanes are commercially produced by what is commonly called “the direct process", in which silicon metal is reacted with an organic halide or hydrogen chloride, optionally in the presence of a catalyst.
• methylchlorosilanes silicon metal is reacted with methyl chloride (CH3CI) in the presence of a catalyst.
• CH3CI methyl chloride
• the direct process is well known in the art, and is well described in patent literature, see for example UK Patent Numbers 375667, 375668, 375669, 375673 and 375674.
• the reaction takes place in a fluid bed reactor in which finely ground silicon metal powder is fluidised by passing methyl chloride gas there through at a temperature of between 200°C and 500°C.
• a by-product of the direct process is direct process residue (DPR).
• DPR comprises a mixture of the higher boiling point halosilanes produced by the direct process.
• DPR is a chemically active, hazardous material.
• the activity of DPR must be reduced prior to transportation and/or disposal.
• DPR is neutralised, for example, with lime solution, to reduce its activity, and may be dewatered to form a gel- solids mixture, generally known as "DPR gel".
• the present invention provides a method of coating a surface of a low surface energy substrate by the following steps:-
• a silicon containing compound in liquid or gaseous form said silicon containing composition being selected from one or more of a chlorine terminated polydimethylsiloxane, direct process residue, Z x SiR 5 4_ x , Si n Y2 n +2 or a mixture thereof, where each Z is chloro or an alkoxy group and each R 5 is an alkyl group or a substituted alkyl group, x is 1,2,3 or 4, n is from 2 to 10 and each Y may be selected from a chloro, fluoro, alkoxy or alkyl group but at least two Y groups must be chloro or alkoxy groups or a mixture thereof to form a grafted coating layer on the substrate surface; and (ii) post-treating the grafted coating layer prepared in step (i) by oxidation or, reduction.
• a silicon containing compound in liquid or gaseous form said silicon containing composition being selected from one or more of a chlorine terminated polydimethylsiloxane, direct process residue,
• a low surface energy substrate is a substrate which has a maximum surface energy of 50mJ/m2.
• the silicon containing compound in liquid or gaseous form used in accordance with the method of the present invention is selected from a chlorine terminated polydimethylsiloxane, a direct process residue, silanes of the formula Z x SiR4_ x ⁇ d
• Si n Y2n+2 or a mixture thereof.
• the silicon containing compound is a chlorine terminated polydimethylsiloxane the degree of polymerisation thereof is preferably between 5 and 20 and most preferably between 5 .and 10 and each terminal silicon in the chain may have 1, 2 or 3 Si-Cl bonds.
• each R 5 group is the same or different and is an alkyl group or a substituted alkyl group.
• R 5 is an alkyl group it may comprise any linear or branched alkyl group having from 1 to 10 carbon atoms such as a methyl, ethyl, 2-methyl hexyl, or isopropyl group.
• R 5 is a substituted alkyl group
• said group preferably comprises any linear or branched alkyl group having from 1 to 10 carbon atoms and at least one substituted group selected from, for example fluoro, chloro, epoxy, amine, acrylate, methacrylate, mercapto. Most preferably the substituted group is a fluoro group.
• Each Z may be the same or different and is preferably an alkoxy or chloro group, most preferably a chloro group.
• x is 3.
• each Y is the same or different and at least two but not more than 2n+l Y groups per Si n Y2n+2 molecule are chloro or alkoxy groups.
• n is between 2 and 5, most preferably n is 2 or 3.
• Y is an alkyl group preferably each alkyl group is a methyl, ethyl or isopropyl group, most preferably a methyl group.
• Y is an alkoxy group the alkyl group thereof is preferably a methyl, ethyl or isopropyl group, most preferably a methyl group.
• the silicon containing compound is direct process residue.
• the substrate is generally exposed to the silicon containing compound in a sealed container.
• the coating is grafted onto the low surface energy substrate without the need for prior activation of the substrate, i.e. it forms a grafted coating layer by covalently bonding with groups on the surface of the substrate, an action only previously observed in the prior art when the substrate was exposed to activation by, for example, plasma or corona treatment prior to the grafting process.
• the method is undertaken at room temperature and pressure.
• the grafted coating layer provided in step (i) of the method of the present invention is subsequently oxidised or reduced.
• oxidation or reduction is achieved using a plasma or corona treatment, most preferably dielectric barrier discharge (DBD) or atmospheric pressure glow discharge (APGD).
• DBD dielectric barrier discharge
• APGD atmospheric pressure glow discharge
• the grafted coating layer will subsequently comprise groups of the formula Si-O m and may then be further treated, for example, subsequent to oxidation the treated substrate may be subjected to any one of the following:-
• any suitable grafting agent may be utilised providing it reacts with the available Si-O m groups.
• This chemical grafting process may provide the opportunity to apply one or more additional layers of the silicon containing material defined above onto the substrate to effectively build up the thickness of the silicon containing coating on the substrate surface.
• Additional layers of silicon containing materials may be applied onto the oxidised, grafted coating layer of silicon containing compound by repeating the method described above, i.e. by applying a further grafted coating layer onto the oxidised coating layer, said further grafted coating layer comprising an oxidisable silicon containing compound which may again be selected from a chlorine terminated polydimethylsiloxane, direct process residue, Z x Si R 5 4_ , Si n Y2n+2 or a mixture thereof.
• the resulting further grafted coating layer may then, if required, be oxidised by, for example, applying a plasma or corona treatment on the further grafted coating layer. The above may be repeated until a predetermined number of further grafted coating layers have been applied onto the substrate.
• any suitable coating material which is readable with the resulting Si- O m groups may be utilised to form the next additional coating layer, these may comprise for example suitable silicon containing materials such as those described in EP 0978324 and discussed previously herein. Where necessary each additional layer may be oxidised or reduced in order to achieve the required surface characteristics.
• a top coat may be applied to the outermost grafted coating layer.
• Such a top coat may comprise any suitable composition but preferably comprises a silicon containing compound which may be but is not necessarily oxidisable.
• Reduction of the grafted coating layer obtained by the process according to the present invention may be achieved by plasma treating the substrate in a hydrogen or nitrogen atmosphere which is preferably free from oxygen and water vapour. Alternatively reduction may be achieved by applying the grafted coating layer in accordance with the present invention in a nitrogen or hydrogen rich atmosphere. The resulting oxygen free layers will typically be rich in silicon and/or silicon carbide groups.
• plasma or corona treatment as described herein may be applied by any conventional means. Many different plasma treatment processes are known, and for example, in the case of oxidation being required any oxidative treatment process which can convert the organosilicon-containing additive on the substrate surface to SiO m is suitable for use in the method of the present invention.
• Suitable oxidative treatment processes include, for example, O2, UV, VUV, IR, ozone, and plasma (including d.c, low frequency, high frequency, microwave, ECR, corona, dielectric barrier and atmospheric glow discharge) treatment processes.
• the gas for use in the plasma treatment process may be, for example, an oxygen-containing gas, e.g. O2 H2O, NO2, and air, or an inert gas; however, when the latter is used in plasma treatment processes etching of the substrate surface may also occur and hence oxygen-containing gasses, in particular O2 and air, are preferred.
• Gas pressure may be atmospheric pressure or lower, for example, from 10Nm ⁇ 2 to lOOONnr ⁇ . Preferred methods of application are by DBD and particularly APGD.
• the duration of the plasma or corona treatment to effect an oxidised surface will depend upon the particular substrate in question and the desired degree of conversion of organosilicon compound on the surface of the substrate to SiO m , and this will typically be the order of seconds.
• Plasma treatment of the substrate surface may be performed with substrate heating and/or pulsing of the plasma discharge.
• the substrate may be heated to a temperature up to and below its melting point.
• Substrate heating and plasma treatment may be cyclic, i.e. the substrate is plasma treated with no heating, followed by heating with no plasma treatment, etc., or may be simultaneous, i.e. substrate heating and plasma treatment occur together.
• a particularly preferred plasma treatment process involves pulsing the plasma discharge with constant heating of the substrate.
• the plasma discharge is pulsed to have a particular "on" time and "off time.
• the on-time is typically from 10 to lOOOO ⁇ s, preferably 100 to lOOO ⁇ s, and the off-time typically from 1000 to lOOOO ⁇ s, preferably from 1000 to 2000 ⁇ s.
• the atmospheric pressure plasma glow discharge will employ a helium diluent and a high frequency (e.g.> 1kHz) power supply to generate a homogeneous atmospheric pressure glow discharge via a Penning ionisation mechanism, (see for example, Kanazawa et al, J.Phys. D: Appl. Phys. 1988, 21, 838, Okazaki et al, Proc. Jpn. Symp. Plasma Chem. 1989, 2, 95, Kanazawa et al, Nuclear Instruments .and Methods in Physical Research 1989, B37/38, 842, and Yokoyama et al., J. Phys. D: Appl. Phys. 1990, 23, 374).
• a helium diluent and a high frequency (e.g.> 1kHz) power supply to generate a homogeneous atmospheric pressure glow discharge via a Penning ionisation mechanism
• the low surface energy substrate may be activated by an atmospheric pressure plasma or a corona discharge treatment, for example, atmospheric pressure glow discharge or direct barrier discharge prior to exposure to the silicon containing compound in order to enhance the activity of the low surface energy substrate surface.
• an atmospheric pressure plasma or a corona discharge treatment for example, atmospheric pressure glow discharge or direct barrier discharge prior to exposure to the silicon containing compound in order to enhance the activity of the low surface energy substrate surface.
• the low energy substrate is subjected to a plasma pre-freatment prior to exposing the low surface energy substrate to a chlorine terminated polydimethylsiloxane, or a silane of the formula, Z x SiR 5 4_ x separately or in combination with each other.
• the low surface energy substrate to be coated may comprise any appropriate material, for example thermoplastics such as polyolefins e.g. polyethylene, and polypropylene, polycarbonates, polyurethanes, polyvinylchloride, polyesters (for example polyalkylene terephthalates, particularly polyethylene terephthalate), polymethacrylates (for example polymethylmethacrylate and polymers of hydroxyethylmethacrylate), polyepoxides, polysulphones, polyphenylenes, polyetherketones, polyimides, polyamides, polystyrenes, phenolic, epoxy and melamine-formaldehyde resins, and blends and copolymers thereof.
• thermoplastics such as polyolefins e.g. polyethylene, and polypropylene, polycarbonates, polyurethanes, polyvinylchloride, polyesters (for example polyalkylene terephthalates, particularly polyethylene terephthalate), polymethacryl
• the substrate may be in the form of synthetic and/or, natural fibres, woven or non-woven fibres, powder.
• the substrate may be of the type described in the applicant's co-pending application WO 01/40359, which was published after the priority date of the present invention, wherein the substrate comprises a blend of an organic polymeric material and an organosilicon-containing additive which is substantially non-miscible with the organic polymeric material.
• the organic polymeric material may be any of those listed above, the organosilicon-containing additive are preferably linear organopolysiloxanes. In the case of such substrates the organosilicon-containing additive migrates to the surface of the mixture and as such is available for reaction or where deemed necessary plasma or corona treatment.
• substantially non-miscible means that the organosilicon-containing additive and the organic material have sufficiently different interaction parameters so as to be non-miscible in equilibrium conditions. This will typically, but not exclusively, be the case when the Solubility Parameters of the organosilicon- containing additive and the organic material differ by more than 0.5 MPal'2.
• the size of the substrate is limited by the dimensions of the area within which the atmospheric pressure plasma discharge is generated, i.e. the distance between the electrodes of the means for generating the plasma.
• the plasma is generated within a gap of from 5 to 50mm, for example 10 to 25mm.
• One means of enhancing the size of the substrate is by having the substrate attached to two reels, such that at the start of one cycle the substantial majority of the substrate is wound around a first reel and during the cycle is passed through the area of the electrodes and is subsequently wound onto the second reel. In this case the cycle may finish either once the single run is complete or if desired, for example, after the reverse run so that the cycle is always completed with the substrate wound around the first reel. If this type of method is used it is essential to ensure that each cycle is of the same duration.
• Substrates coated by the method of the present invention may have various utilities.
• coatings may increase hydrophobicity, oleophobicity, fuel and soil resistance, water resistance and/or the release properties of the substrate; and may enhance the softness of fabrics to touch.
• the utilisation of multiple layered coated substrates appear to enhance the advantages observed.
• Polyethylene film substrates were prepared by ultrasonic cleaning for 30 seconds in a 1 :1 mixture of propan-2-ol and cyclohexane. One polyethylene sample was then activated using DBD apparatus in air (voltage up to 11 kV, 328 Hz, 2mm inter-electrode gap, 10 seconds treatment). A second polyethylene sample was exposed to the reagent without prior activation.
• Polyethylene film substrates were prepared by ultrasonic cleaning for 30 seconds in a 1 : 1 mixture of pro ⁇ an-2-ol and cyclohexane. One polyethylene sample was then activated using DBD apparatus in air (voltage up to 11 kV, 328 Hz, 2mm inter-electrode gap, 10 seconds treatment). A second polyethylene sample was exposed to the grafting reagent without prior activation.
• DPR effectively grafts both to an activated and non activated polyethylene surface to produce a siloxane coating.
• Low levels of CI indicate hydrolysis of the residual Si- Cl bonds within the coating, based on the following reaction at Si-Cl bonds. (Si-Cl + H 2 O — ⁇ Si-OH + HC1)
• Example 3 Grafting of Direct Process Residue to polyethylene in air
• Polyethylene film substrates were prepared by ultrasonic cleaning for 30 seconds in a 1 : 1 mixture of propan-2-ol and cyclohexane. One polyethylene sample was then activated using DBD apparatus in air (up to 1 lkV, 328 Hz, 2mm inter-electrode gap, 10 seconds freatment). A second polyethylene sample was exposed to the grafting reagent without prior activation.
• DPR effectively grafts both to an activated and non activated polyethylene surface to produce a siloxane coating. Low levels of CI are retained when grafting and washing is carried out in ambient conditions.
• DPR effectively grafts both to an activated and non-activated polyethylene substrate in ambient conditions to produce a siloxane coating.
• Low levels of CI indicate hydrolysis of the residual Si-Cl bonds within the coating. In this case the CI results are particularly low due to exposure to atmospheric moisture during both the grafting and washing steps.
• Example 4 DBD Oxidation of grafted layers produced in Examples 1 and 3
• Coatings derived from DPR described in the Example 1 and Example 3 above were further oxidised by treatment with dielectric barrier discharge apparatus in air (up to 11 kV, 328 Hz, 2mm inter-electrode gap, 60 seconds treatment). The oxidised samples were then analysed using XPS and the results are shown in Table 4.
• Example 5 The APGD oxidation of grafted layers produced in Examples 1 and 3
• Coatings derived from DPR described in the Example 1 and Example 3 above were further oxidised by treatment with atmospheric pressure glow discharge apparatus (1800sccm total flow rate, 5% oxygen 95% helium, 60 seconds treatment). The oxidised samples were then analysed using XPS and the results are shown in Table 5.
• Example 6 The preparation of multilayer films derived from direct Process Residues (DPR) using DBD.
• Polyethylene film subsfrate was prepared by ultrasonic cleaning for 30 seconds in a 1 : 1 mixture of propan-2-ol and cyclohexane.
• the polyethylene subsfrate was then activated using DBD apparatus in air (up to 11 kV, 328 Hz, 2mm inter-electrode gap, 10 seconds treatment).
• the polyethylene substrate was sealed in 60 cm- vessels containing 0.02 ml of DPR with samples elevated on a platform. After exposure to the DPR vapour for 1 hour the samples were removed and washed for one minute in dry toluene.
• the films derived from DPR on polyethylene substrates were then treated using DBD apparatus in air (up to 11 kV, 328 Hz, 2mm inter-electrode gap, 60 seconds treatment). Repeating the coating and oxidation procedure 10 times formed multilayers.
• the oxygen gas barrier performance of the films derived from DPR was then evaluated. Gas transport through the coated films was measured by mass spectrometry, and the barrier improvement factor calculated as [coated substrate gas permeation] / [reference sample gas permeation]. The results are shown in Table 6.
• a polyethylene film substrate was prepared by ultrasonic cleaning for 30 seconds in a 1 : 1 mixture of propan-2-ol and cyclohexane.
• the polyethylene substrate was then activated using DBD apparatus in air (up to 11 kV, 328 Hz, 2mm inter-electrode gap, 10 seconds treatment).
• the polyethylene substrate was sealed in 60 cm ⁇ vessels containing 0.02 ml of DPR with samples elevated on a platform. After exposure to the DPR vapour for 1 hour the samples were removed and washed for one minute in dry toluene.
• the films derived from DPR on polyethylene substrates were then treated using APGD apparatus (1800sccm total flow rate, 5% oxygen 95% helium, 60 seconds treatment).
• Example 8 The preparation of multilayer films derived from direct process residue using APGD (10 minutes grafting time)
• Polyethylene film substrate was prepared by ultrasonic cleaning for 30 seconds in a 1:1 mixture of propan-2-ol and cyclohexane.
• the polyethylene subsfrate was then activated using DBD apparatus in air (up to 11 kV, 328 Hz, 2mm inter-electrode gap, 10 seconds freatment).
• the polyethylene substrate was sealed in 60 cm ⁇ vessels containing 0.02 ml of DPR with samples elevated on a platform. After exposure to the DPR vapour for 10 minutes the samples were removed and washed for one minute in dry toluene.
• the films derived from DPR on polyethylene substrates were then treated using APGD apparatus (1800sccm total flow rate, 5% oxygen 95% helium, 60 seconds freatment).
• Polyethylene film subsfrate was prepared by ultrasonic cleaning for 30 seconds in a 1 : 1 mixture of propan-2-ol and cyclohexane.
• the polyethylene substrate was then activated using DBD apparatus in air (up to 11 kV, 328 Hz, 2mm inter-electrode gap, 10 seconds treatment).
• Polystyrene substrates were prepared by ultrasonic cleaning for 30 seconds in propan-2-ol. Polystyrene samples were then treated using DBD apparatus in air (up to 11 kV, 328 Hz, 2mm inter-electrode gap, 10 seconds treatment). The polystyrene substrate was then coated with chlorine terminated PDMS polymer (with typical degree of polymerisation 6-8) from a dropping pipette and left for 40 minutes. The coated polystyrene substrate was then washed for two minutes in heptane.
• the films derived from chlorine terminated PDMS on polystyrene substrates were then treated using DBD apparatus in air (up to 11 kV, 328 Hz, 2mm inter-electrode gap, 10 seconds treatment). The coating, washing and oxidation procedure was repeated to form thicker layers. The oxidised samples were then analysed using XPS. The results are shown in Table 9.

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• 2001
  • 2001-06-06 GB GBGB0113751.2A patent/GB0113751D0/en not_active Ceased
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