WO2002097900A3 - Integrierte, abstimmbare kapazität - Google Patents

Integrierte, abstimmbare kapazität Download PDF

Info

Publication number
WO2002097900A3
WO2002097900A3 PCT/DE2002/001995 DE0201995W WO02097900A3 WO 2002097900 A3 WO2002097900 A3 WO 2002097900A3 DE 0201995 W DE0201995 W DE 0201995W WO 02097900 A3 WO02097900 A3 WO 02097900A3
Authority
WO
WIPO (PCT)
Prior art keywords
regions
tunable capacitor
semiconductor body
integrated tunable
distinctly
Prior art date
Application number
PCT/DE2002/001995
Other languages
English (en)
French (fr)
Other versions
WO2002097900A2 (de
Inventor
Judith Maget
Original Assignee
Infineon Technologies Ag
Judith Maget
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Judith Maget filed Critical Infineon Technologies Ag
Priority to EP02745102A priority Critical patent/EP1390985A2/de
Publication of WO2002097900A2 publication Critical patent/WO2002097900A2/de
Publication of WO2002097900A3 publication Critical patent/WO2002097900A3/de
Priority to US10/724,905 priority patent/US6864528B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

Es ist eine integrierte, abstimmbare Kapazität angegeben, welche bezüglich herkömmlichen CMOS-Varaktoren dahingehend weitergebildet ist, dass anstelle üblicher Source-/Drain-Anschlussgebiete Anschlussgebiete mit einer deutlich grösseren Tiefe in den Halbleiterkörper hinein (A, 1) vorgesehen sind. Hierzu können beispielsweise wannenförmige Gebiete oder Kollektortiefimplantationsgebiete (10, 6) vorgesehen sein, mit denen die bei grossen Abstimmspannungen auftretenden verarmten Gebiete deutlich weiter in den Halbleiterkörper (1) hineinreichen. Der erfindungsgemässe Varaktor mit grossem Abstimmbereich ist ohne zusätzlichen Aufwand in Massenherstellungsverfahren produzierbar und beispielsweise in Phasenregelschleifen einsetzbar.
PCT/DE2002/001995 2001-05-30 2002-05-29 Integrierte, abstimmbare kapazität WO2002097900A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP02745102A EP1390985A2 (de) 2001-05-30 2002-05-29 Integrierte, abstimmbare kapazität
US10/724,905 US6864528B2 (en) 2001-05-30 2003-12-01 Integrated, tunable capacitor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10126328.7 2001-05-30
DE10126328A DE10126328A1 (de) 2001-05-30 2001-05-30 Integrierte, abstimmbare Kapazität

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/724,905 Continuation US6864528B2 (en) 2001-05-30 2003-12-01 Integrated, tunable capacitor

Publications (2)

Publication Number Publication Date
WO2002097900A2 WO2002097900A2 (de) 2002-12-05
WO2002097900A3 true WO2002097900A3 (de) 2003-02-20

Family

ID=7686637

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/001995 WO2002097900A2 (de) 2001-05-30 2002-05-29 Integrierte, abstimmbare kapazität

Country Status (4)

Country Link
US (1) US6864528B2 (de)
EP (1) EP1390985A2 (de)
DE (1) DE10126328A1 (de)
WO (1) WO2002097900A2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005083880A1 (en) * 2004-02-20 2005-09-09 Gct Semiconductor, Inc. Improvement of the coarse tuning time in pll with lc oscillator
EP1633005A1 (de) * 2004-09-03 2006-03-08 Infineon Technologies AG Monolithisch integrierter Kondensator
US9070791B2 (en) * 2006-11-15 2015-06-30 International Business Machines Corporation Tunable capacitor
US7821053B2 (en) 2006-11-15 2010-10-26 International Business Machines Corporation Tunable capacitor
US8450832B2 (en) * 2007-04-05 2013-05-28 Globalfoundries Singapore Pte. Ltd. Large tuning range junction varactor
US20080299195A1 (en) * 2007-05-31 2008-12-04 Brent Blackburn Use of ranolazine for elevated brain-type natriuretic peptide
US7741187B2 (en) * 2007-09-20 2010-06-22 Chartered Semiconductor Manufacturing, Ltd. Lateral junction varactor with large tuning range
US10115835B2 (en) 2016-08-29 2018-10-30 Qualcomm Incorporated Variable capacitor based on buried oxide process

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2138206A (en) * 1983-02-23 1984-10-17 Clarion Co Ltd Variable capacitor element
JPH03147376A (ja) * 1989-11-02 1991-06-24 Nissan Motor Co Ltd 可変容量素子
EP0902483A1 (de) * 1997-09-11 1999-03-17 Telefonaktiebolaget Lm Ericsson Elektrische Anordnung mit einer spannungsabhängiger Kapazität und Verfahren zur Herstellung
US5965912A (en) * 1997-09-03 1999-10-12 Motorola, Inc. Variable capacitor and method for fabricating the same
EP1024538A1 (de) * 1999-01-29 2000-08-02 STMicroelectronics S.r.l. MOS Varaktor, insbesondere für Radiofrequenzsender-Empfänger

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4092619A (en) * 1976-12-27 1978-05-30 Intel Corporation Mos voltage controlled lowpass filter
SE515783C2 (sv) * 1997-09-11 2001-10-08 Ericsson Telefon Ab L M Elektriska anordningar jämte förfarande för deras tillverkning
US6320474B1 (en) * 1998-12-28 2001-11-20 Interchip Corporation MOS-type capacitor and integrated circuit VCO using same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2138206A (en) * 1983-02-23 1984-10-17 Clarion Co Ltd Variable capacitor element
JPH03147376A (ja) * 1989-11-02 1991-06-24 Nissan Motor Co Ltd 可変容量素子
US5965912A (en) * 1997-09-03 1999-10-12 Motorola, Inc. Variable capacitor and method for fabricating the same
EP0902483A1 (de) * 1997-09-11 1999-03-17 Telefonaktiebolaget Lm Ericsson Elektrische Anordnung mit einer spannungsabhängiger Kapazität und Verfahren zur Herstellung
EP1024538A1 (de) * 1999-01-29 2000-08-02 STMicroelectronics S.r.l. MOS Varaktor, insbesondere für Radiofrequenzsender-Empfänger

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 015, no. 371 (E - 1113) 18 September 1991 (1991-09-18) *

Also Published As

Publication number Publication date
US6864528B2 (en) 2005-03-08
EP1390985A2 (de) 2004-02-25
DE10126328A1 (de) 2002-12-12
US20040114302A1 (en) 2004-06-17
WO2002097900A2 (de) 2002-12-05

Similar Documents

Publication Publication Date Title
WO2002097900A3 (de) Integrierte, abstimmbare kapazität
EP1261126A3 (de) Differentieller spannungsgesteuerter Oszillator mit Varaktoren und umschaltbaren Frequenzbändern
WO2000067325A8 (en) Method and apparatus for digitally controlling the capacitance of an integrated circuit device using mos field-effect transistors
US6798011B2 (en) Multi-terminal MOS varactor
US8902009B1 (en) Tuning circuit for inductor capacitor (LC) tank digitally controlled oscillator
US7253073B2 (en) Structure and method for hyper-abrupt junction varactors
EP1282227A3 (de) Abstimmbares Filter und Verfahren zu seiner Abstimmung
WO2005004331A3 (en) Differential charge pump phase lock loop (pll) synthesizer with adjustable tuning voltage range
EP1292034A3 (de) Frequenzsynthetisierer
WO2005015731A3 (en) Tunable frequency, low phase noise and low thermal drift oscillator
CA2245739A1 (en) Output stage for a low-current charge pump and demodulator integrating such a pump
EP0893878A3 (de) Hochfrequenz-Oszillatorschaltung
US8035456B1 (en) Multi-phase signal generator and voltage-controlled oscillator thereof
EP0863605A3 (de) Schaltungsanordnung zum Vermeiden von parasitären Oszillatorbetriebszuständen in einer Oszillatorschaltung
Herzel et al. Integrated CMOS wideband oscillator for RF applications
WO2005057790A3 (en) Integrated low noise microwave wideband push-push vco
WO2000057454A3 (en) Improved integrated oscillators and tuning circuits
ES2317648T3 (es) Dispositivo electrico que comprende una capacitancia o capacidad depe ndiente del voltaje o tension y metodo de fabricacion del mismo.
EP1786096A3 (de) Preiswerter Ozillator mit einem mehroktavigen Abstimmbereich und geringem und konstantem Phasenrauschen
WO2002097899A3 (de) Integrierte, abstimmbare kapazität
EP1239583A3 (de) Oberflächenwellenoszillator und Betriebsverfahren dafür
WO2002082548A3 (de) Integrierte, abstimmbare kapazität
EP0915528A3 (de) Hochfrequenzfilter und Verfahren zur Regelung seiner Frequenzcharakteristika
JP2006042338A (ja) 線形容量を有する電圧制御発振器
ATE294991T1 (de) Niobium-pulver für kondensatoren daraus, gesinterter körper und kondensator mit einem solchen gesinterten körper

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP KR US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
AK Designated states

Kind code of ref document: A3

Designated state(s): JP KR US

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 2002745102

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 10724905

Country of ref document: US

WWP Wipo information: published in national office

Ref document number: 2002745102

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP

WWW Wipo information: withdrawn in national office

Ref document number: 2002745102

Country of ref document: EP