WO2002097899A3 - Integrierte, abstimmbare kapazität - Google Patents

Integrierte, abstimmbare kapazität Download PDF

Info

Publication number
WO2002097899A3
WO2002097899A3 PCT/DE2002/001993 DE0201993W WO02097899A3 WO 2002097899 A3 WO2002097899 A3 WO 2002097899A3 DE 0201993 W DE0201993 W DE 0201993W WO 02097899 A3 WO02097899 A3 WO 02097899A3
Authority
WO
WIPO (PCT)
Prior art keywords
tunable capacitor
integrated
integrated tunable
regions
quality
Prior art date
Application number
PCT/DE2002/001993
Other languages
English (en)
French (fr)
Other versions
WO2002097899A2 (de
Inventor
Judith Maget
Original Assignee
Infineon Technologies Ag
Judith Maget
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Judith Maget filed Critical Infineon Technologies Ag
Priority to EP02748561A priority Critical patent/EP1390986A2/de
Priority to JP2003500982A priority patent/JP4191028B2/ja
Publication of WO2002097899A2 publication Critical patent/WO2002097899A2/de
Publication of WO2002097899A3 publication Critical patent/WO2002097899A3/de
Priority to US10/712,664 priority patent/US6906904B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H01L27/0808—Varactor diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

Es ist eine integrierte, abstimmbare Kapazität angegeben, bei der die Güte dadurch verbessert ist, daß anstelle von Source-/Drain-Gebieten hochdotierte Wannenanschlußgebiete (6) von großer Tiefe, beispielsweise als Kollektortiefimplantationsgebiete ausgebildet, vorgesehen sind. Hierdurch ist der Serienwiderstand der abstimmbaren Kapazität verringert. Die integrierte, abstimmbare Kapazität ist beispielsweise in integrierten, spannungsgesteuerten Oszillatorschaltungen anwendbar, bei denen eine hohe Güte gefordert ist.
PCT/DE2002/001993 2001-05-29 2002-05-29 Integrierte, abstimmbare kapazität WO2002097899A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP02748561A EP1390986A2 (de) 2001-05-29 2002-05-29 Integrierte, abstimmbare kapazität
JP2003500982A JP4191028B2 (ja) 2001-05-29 2002-05-29 集積型可調静電容量
US10/712,664 US6906904B2 (en) 2001-05-29 2003-11-13 Integrated, tunable capacitance

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10126116A DE10126116A1 (de) 2001-05-29 2001-05-29 Integrierte, abstimmbare Kapazität
DE10126116.0 2001-05-29

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/712,664 Continuation US6906904B2 (en) 2001-05-29 2003-11-13 Integrated, tunable capacitance

Publications (2)

Publication Number Publication Date
WO2002097899A2 WO2002097899A2 (de) 2002-12-05
WO2002097899A3 true WO2002097899A3 (de) 2003-03-13

Family

ID=7686504

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/001993 WO2002097899A2 (de) 2001-05-29 2002-05-29 Integrierte, abstimmbare kapazität

Country Status (5)

Country Link
US (1) US6906904B2 (de)
EP (1) EP1390986A2 (de)
JP (1) JP4191028B2 (de)
DE (1) DE10126116A1 (de)
WO (1) WO2002097899A2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6879003B1 (en) * 2004-06-18 2005-04-12 United Microelectronics Corp. Electrostatic discharge (ESD) protection MOS device and ESD circuitry thereof
US7619273B2 (en) * 2004-10-06 2009-11-17 Freescale Semiconductor, Inc. Varactor
KR101146224B1 (ko) * 2005-11-16 2012-05-15 매그나칩 반도체 유한회사 Ｍｏｓ 바랙터 및 그를 포함하는 전압 제어 발진기
US20090102341A1 (en) * 2007-10-23 2009-04-23 Slam Brands, Inc. Cable management apparatus, system, and furniture structures

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5965912A (en) * 1997-09-03 1999-10-12 Motorola, Inc. Variable capacitor and method for fabricating the same
US6034388A (en) * 1998-05-15 2000-03-07 International Business Machines Corporation Depleted polysilicon circuit element and method for producing the same
US6172378B1 (en) * 1999-05-03 2001-01-09 Silicon Wave, Inc. Integrated circuit varactor having a wide capacitance range

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03147376A (ja) * 1989-11-02 1991-06-24 Nissan Motor Co Ltd 可変容量素子
US5894163A (en) * 1996-04-02 1999-04-13 Motorola, Inc. Device and method for multiplying capacitance

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5965912A (en) * 1997-09-03 1999-10-12 Motorola, Inc. Variable capacitor and method for fabricating the same
US6034388A (en) * 1998-05-15 2000-03-07 International Business Machines Corporation Depleted polysilicon circuit element and method for producing the same
US6172378B1 (en) * 1999-05-03 2001-01-09 Silicon Wave, Inc. Integrated circuit varactor having a wide capacitance range

Also Published As

Publication number Publication date
WO2002097899A2 (de) 2002-12-05
US6906904B2 (en) 2005-06-14
US20040094824A1 (en) 2004-05-20
DE10126116A1 (de) 2002-08-22
JP2004530305A (ja) 2004-09-30
JP4191028B2 (ja) 2008-12-03
EP1390986A2 (de) 2004-02-25

Similar Documents

Publication Publication Date Title
WO2005017607A3 (en) Opto-electronic feedback for stabilizing oscillators
EP0216052A3 (de) Abnehmbares Seitenwandabstandstück zur Bildung eines niedrigdotierten Drains mittels zweier Maskierungsstufen
WO2004081989A3 (en) Angled implant for trench isolation
WO2006066265A3 (en) Drain extended pmos transistors and methods for making the same
DE60036410D1 (de) Methoden zur herstellung einer feldeffekttransistor-struktur mit teilweise isolierten source/drain-übergängen
TW200501786A (en) Method for a radiotelephone to search for higher priority networks
WO2006073943A3 (en) Method for forming a one mask hyperabrupt junction varactor using a compensated cathode contact
WO2005016879A3 (en) Cyclic pyrazinoylguanidine sodium channel blockers
WO2002012190A3 (en) Non-imidazole aryloxypiperidines as h3 receptor ligands
CA2523831A1 (en) 5,7-diaminopyrazolo[4,3-d]pyrimidines useful in the treatment of hypertension
DE602004015898D1 (de) Spannungsgesteuerter Oszillator mit abstimmbaren MOS-Kondensatoren
WO2002074748A8 (en) Metalloproteinase inhibitors
DE60238693D1 (de) Leistungs-mosfet mit graben-gateelektrode und verfahren zu dessen herstellung
TW200516799A (en) MEMS type resonator, method for manufacturing the same, and communication device
WO2006026055A3 (en) Mos varactor using isolation well
AU2002353084A1 (en) Varactor with improved tuning range
WO2004032257A3 (de) Folie mit organischen halbleitern
TW200620485A (en) Source/drain structure for high performance sub 0.1 micron transistors
WO2002097899A3 (de) Integrierte, abstimmbare kapazität
CA2245739A1 (en) Output stage for a low-current charge pump and demodulator integrating such a pump
WO2003015182A3 (de) Steg-feldeffekttransistor und verfahren zum herstellen eines steg-feldeffekttransistors
DE602005023762D1 (de) Niobpulver, niobgranulat, niobsinterkörper und kondensator und herstellungsverfahren dafür
WO2002043722A3 (en) Copper chelators for treating ocular inflammation
WO2005060693A3 (en) 9-desoxoerythromycin compounds as prokinetic agents
WO2002096420A3 (en) Method for treating nerve injury caused by surgery

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
AK Designated states

Kind code of ref document: A3

Designated state(s): JP US

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 2002748561

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 10712664

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 2003500982

Country of ref document: JP

WWP Wipo information: published in national office

Ref document number: 2002748561

Country of ref document: EP