WO2002090917A2 - Dispositif de fuite test - Google Patents

Dispositif de fuite test Download PDF

Info

Publication number
WO2002090917A2
WO2002090917A2 PCT/EP2002/004902 EP0204902W WO02090917A2 WO 2002090917 A2 WO2002090917 A2 WO 2002090917A2 EP 0204902 W EP0204902 W EP 0204902W WO 02090917 A2 WO02090917 A2 WO 02090917A2
Authority
WO
WIPO (PCT)
Prior art keywords
silicon oxide
test
membrane
test gas
leak
Prior art date
Application number
PCT/EP2002/004902
Other languages
German (de)
English (en)
Other versions
WO2002090917A3 (fr
Inventor
Ludolf Gerdau
Rudi Widt
Original Assignee
Inficon Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inficon Gmbh filed Critical Inficon Gmbh
Publication of WO2002090917A2 publication Critical patent/WO2002090917A2/fr
Publication of WO2002090917A3 publication Critical patent/WO2002090917A3/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M3/00—Investigating fluid-tightness of structures
    • G01M3/02—Investigating fluid-tightness of structures by using fluid or vacuum
    • G01M3/04—Investigating fluid-tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point
    • G01M3/20—Investigating fluid-tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point using special tracer materials, e.g. dye, fluorescent material, radioactive material
    • G01M3/207—Investigating fluid-tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point using special tracer materials, e.g. dye, fluorescent material, radioactive material calibration arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M3/00—Investigating fluid-tightness of structures
    • G01M3/007—Leak detector calibration, standard leaks

Definitions

  • the invention relates to a test leak device with a test gas storage and a test gas outlet.
  • Test leak devices generate a flow of a test gas, the size of which is known as precisely as possible, the size of which is called the leak rate.
  • Test leak devices are used to check and adjust leak detectors. Mass spectrometers, for example, serve as leak detection devices for detecting the test gas.
  • the test leak device supplies the leak detector with a known test leakage current, the leak rate measurement value output by the leak detector being compared and compared with the known leak rate of the test leak device.
  • a known test leak device is the diffusion test leak device, in which the test gas flows through a gas-permeable membrane with a constant leak rate due to a pressure drop. The leak rate can only be changed by changing the gas pressure difference, which is slow and time-consuming.
  • test leak device which uses a capillary for the defined test gas delivery through which the test gas coexists constant leak rate flows through.
  • the leak rate is largely fixed, whereby there is always the risk that the sensitive capillary clogs and then allows no or only a greatly reduced test gas flow to pass.
  • the object of the invention is to improve the controllability of the test gas flow in a test leak device.
  • the test leak device has a test gas storage and a test gas outlet.
  • the test gas outlet is closed by a membrane • made of silicon oxide, which can be heated by a heating device.
  • Silicon oxide is permeable to small molecular gases, but the gas permeability depends on the temperature of the silicon oxide. While the silicon oxide is almost impermeable to a small molecular test gas at room temperature, it is more ten decades more permeable to such a gas at a temperature of approx. 700 ° C.
  • a test gas flow with a leak rate of 10 -11 to 10 ⁇ 4 mbar'l's -1 can be set over a temperature range of approx. 700 K. When the temperature of the silicon oxide membrane is constant, the test gas flow is also very constant.
  • test gas zero flow can be realized as well as very small constant test gas flows.
  • rapid heating and / or cooling of the silicon oxide membrane can also produce a test gas stream modulated with 1 to 2 Hz.
  • Pure helium is preferably used as the test gas, but other small molecular gases can also be used.
  • the flow rate of the test gas through the silicon oxide membrane depends on the test gas pressure in the test gas storage. finally depends on the temperature of the silicon oxide membrane.
  • the test gas flow rate or the leak rate can thus be controlled and reproduced exactly over a wide range via the temperature of the silicon oxide membrane.
  • the membrane is a silicon oxide wafer which, for reasons of stability, has a basic thickness of 1 to 2 mm and which has a plurality of windows with a material thickness of less than 20 ⁇ m.
  • the gas permeability of silicon oxide with a material thickness of 1 to 2 mm is low, so that the thin-walled windows. must be seen through which the test gas can pass.
  • the supporting structure is formed by the areas with a material thickness of 1 to 2 mm. In this way, by providing a large number of windows, a very large gas-permeable surface can be formed in the mechanically nevertheless stable silicon oxide pane.
  • the window panes are preferably approximately round and have a diameter of less than 2.0 mm.
  • the heating device is preferably an electrical heating coil on the silicon membrane or wafer.
  • the heating coil can be, for example, a heating wire applied to the silicon oxide wafer in a meandering manner. With the electric heating coil, the silicon membrane or disk can be heated up very quickly, so that high temperatures and rapid changes in the test gas flow rate and possibly modulations of the test gas flow can be realized with such a heating device.
  • the heating device can also be in the form of an infrared radiator directed onto the silicon oxide membrane or wafer or as an electron source directed towards the silicon oxide wafer.
  • the formation of the heater as Infrared emitters or as an electron source allow the silicon oxide disk or membrane to be heated evenly and over a large area.
  • a temperature sensor which is connected to a control device and / or a display device for displaying the measured temperature, is preferably arranged on the silicon oxide membrane or wafer.
  • the temperature of the silicon oxide membrane or wafer can be precisely controlled and maintained by the control device, whereby an exactly reproducible and constant test gas leak rate can be realized.
  • FIG. 1 shows a test leak device with a test gas storage and a test gas outlet in longitudinal section
  • Fig. 2 shows the silicon oxide membrane of the test leak device of Fig. 1 in longitudinal section.
  • test leak device 10 which is used to generate a defined gas flow for checking and adjusting highly sensitive leak detection devices, for example sector field mass spectrometers.
  • the test leak device 10 essentially consists of a test gas reservoir 12, a base 14 with a test gas outlet 16 and a control device 18.
  • the test gas storage 12 is formed by a gas-tight cup-shaped storage container 20 which, with its opening pointing downwards, is inserted gas-tight into the upper end of the base 14. sets is.
  • a manometer 22 for displaying the test gas pressure is arranged on the ceiling wall of the storage container 20. 100 to 200 cubic centimeters of helium with an overpressure of 2 to 7 bar are stored as test gas in the storage container 20. However, the gas overpressure can generally be between 0.3 and 100 bar.
  • a closable fill valve 24 is provided on the base 14 for filling the test gas reservoir 12.
  • the metal base body of the base 14 15 has an axially vertical outlet channel 17 which forms the test gas outlet 16. At the end of the outlet channel 17 on the storage container side, an annular step-like shoulder 26 is embedded in the base body 15, in which a membrane 30 made of silicon oxide is supported on an annular insulating body 28.
  • the membrane 30 is a circular disk 32, which consists of silicon oxide and is shown in more detail in FIG. 2.
  • the silicon oxide disc has a diameter of approximately 10 mm and a material thickness of 0.5 mm.
  • the silicon oxide pane 32 has 200 small windows 34 with an average diameter of 0.4 mm, in the area of which the silicon oxide has a thickness of only 5 to 6 ⁇ m. The gas passage of the helium test gas occurs practically exclusively in the area of the windows 34.
  • a meandering electrical heating coil 36 is arranged as a heating device, which is supplied with electrical energy from a control device 18 via supply lines 38 leading to the outside.
  • the heating coil 36 is designed such that the entire surface of the silicon oxide wafer 32 is always heated approximately uniformly.
  • the heating power of the heater can be controlled in a range between 3 to 30 watts.
  • the temperature of the silicon oxide wafer 32 can be up to 700 ° C. at Good thermal conductivity of the insulating body 28, modulation rates of 1 to 2 Hz can be achieved.
  • a temperature sensor 40 is also arranged on the underside of the silicon oxide wafer 32 and continuously measures the intrinsic temperature of the silicon oxide wafer 32.
  • the temperature sensor 40 is also connected to the control device 18 via electrical lines 42.
  • a filter disk 43 with a locking ring 44 is arranged as mechanical protection, which prevents particles from penetrating into the sensitive downstream analysis device, for example silicon oxide bodies if the silicon oxide disk 32 breaks.
  • a fastening flange 46 is provided, which serves to easily mount the test leak device 10 to a subsequent element.
  • the insulation body 28 consists of a good heat-insulating, heat and gas-resistant material and thermally insulates the silicon oxide membrane 30 from the base body 15. As a result, the heat dissipation from the silicon oxide membrane into the base 14 is reduced to a minimum, so that the heating energy required to maintain a certain temperature of the silicon oxide membrane is also kept as low as possible. To achieve high modulation frequencies, however, the insulation body 28 can also consist of a material that is a good conductor of heat.
  • a pressure sensor can be provided within the test gas reservoir 12 or on the inside of the base body 15, which pressure sensor can also be connected to the control device 18. With another pressure sensor connected to the control device 18 in the loading rich of the outlet channel 17, the control device can realize a test gas flow of constant leak rate even with changing pressure conditions by appropriate control of the heating device.
  • leak rates of 10 ⁇ n to 10 "4 mbar"1's _1 can be achieved.
  • test leak device 10 represents, on the one hand, a test gas source that can be precisely adjusted and controlled over a wide leak rate range and is at the same time very reliable since blockages in the outlet channel 17 or the membrane 30 are practically impossible.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Examining Or Testing Airtightness (AREA)
  • Sampling And Sample Adjustment (AREA)

Abstract

Un dispositif de fuite test présente un réservoir de gaz traceur (12) et une sortie de gaz traceur (16) fermée par une membrane (30) en oxyde de silicium. L'invention concerne également un dispositif chauffant permettant de chauffer le disque d'oxyde de silicium (32). S'agissant de l'oxyde de silicium, la perméabilité au gaz à faible poids moléculaire dépend principalement de sa température, si bien que le chauffage de la membrane d'oxyde de silicium permet de modifier et de commander le débit de fuite du dispositif de fuite test.
PCT/EP2002/004902 2001-05-10 2002-05-04 Dispositif de fuite test WO2002090917A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2001122733 DE10122733A1 (de) 2001-05-10 2001-05-10 Testleckvorrichtung
DE10122733.7 2001-05-10

Publications (2)

Publication Number Publication Date
WO2002090917A2 true WO2002090917A2 (fr) 2002-11-14
WO2002090917A3 WO2002090917A3 (fr) 2003-03-20

Family

ID=7684290

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2002/004902 WO2002090917A2 (fr) 2001-05-10 2002-05-04 Dispositif de fuite test

Country Status (2)

Country Link
DE (1) DE10122733A1 (fr)
WO (1) WO2002090917A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011124618A1 (fr) * 2010-04-09 2011-10-13 Inficon Gmbh Membrane sélective aux gaz et procédé de fabrication associé

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1543309B1 (fr) 2002-09-26 2006-09-20 Inficon GmbH Dispositif de fuite de reference pour detecteur renifleur de fuite
DE10308687A1 (de) * 2002-09-26 2004-04-08 Inficon Gmbh Prüfleckeinrichtung für einen Schnüffellecksucher
ITTO20030032A1 (it) * 2003-01-24 2004-07-25 Varian Spa Membrana permeabile selettivamente ai gas e metodo per la sua realizzazione.
DE10353033A1 (de) * 2003-11-13 2005-06-09 Inficon Gmbh Verfahren zum Betrieb eines Wasserstoff-Testlecks
DE102006026125A1 (de) * 2006-06-03 2007-12-06 Inficon Gmbh Gassensor
DE102006028778A1 (de) * 2006-06-23 2007-12-27 Inficon Gmbh Lecksuchgerät
DE102007003290A1 (de) * 2007-01-23 2008-07-24 Bayerische Motoren Werke Aktiengesellschaft Gasdämpfer oder Gasfederdämpfer
CN108844692B (zh) * 2018-06-27 2020-07-28 山东拙诚智能科技有限公司 一种压力差法检测膜式燃气表内泄漏的方法
DE102020100830A1 (de) * 2020-01-15 2021-07-15 Inficon Gmbh Prüfgasapplikator
DE102020116939A1 (de) 2020-06-26 2021-12-30 Inficon Gmbh Prüfleckvorrichtung
DE102021134647A1 (de) 2021-12-23 2023-06-29 Inficon Gmbh Vakuumlecksucher mit Ansprüh-Membran-Testleck und Verfahren

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2979937A (en) * 1956-01-03 1961-04-18 Chausson Usines Sa Device particularly for calibrating equipment for detecting leaks and similar purposes
DE19521275A1 (de) * 1995-06-10 1996-12-12 Leybold Ag Gasdurchlaß mit selektiv wirkender Durchtrittsfläche sowie Verfahren zur Herstellung der Durchtrittsfläche

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2926112A1 (de) * 1979-06-28 1981-01-08 Bosch Gmbh Robert Testleck-sonde
DE4326265A1 (de) * 1993-08-05 1995-02-09 Leybold Ag Testgasdetektor, vorzugsweise für Lecksuchgeräte, sowie Verfahren zum Betrieb eines Testgasdetektors dieser Art
JP2850816B2 (ja) * 1995-12-18 1999-01-27 日本電気株式会社 バンプ接合検査装置及び検査方法
DE19832833C2 (de) * 1998-07-21 2002-01-31 Fraunhofer Ges Forschung Verfahren zur thermographischen Untersuchung eines Werkstückes und Vorrichtung hierfür

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2979937A (en) * 1956-01-03 1961-04-18 Chausson Usines Sa Device particularly for calibrating equipment for detecting leaks and similar purposes
DE19521275A1 (de) * 1995-06-10 1996-12-12 Leybold Ag Gasdurchlaß mit selektiv wirkender Durchtrittsfläche sowie Verfahren zur Herstellung der Durchtrittsfläche

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011124618A1 (fr) * 2010-04-09 2011-10-13 Inficon Gmbh Membrane sélective aux gaz et procédé de fabrication associé
CN102884409A (zh) * 2010-04-09 2013-01-16 英福康有限责任公司 气体选择薄膜及其生产方法
RU2558644C2 (ru) * 2010-04-09 2015-08-10 Инфикон Гмбх Газоселективная мембрана и способ ее изготовления
EP3029446A1 (fr) * 2010-04-09 2016-06-08 Inficon GmbH Membrane à sélectivité gazeuse et son procédé de production

Also Published As

Publication number Publication date
DE10122733A1 (de) 2002-11-14
WO2002090917A3 (fr) 2003-03-20

Similar Documents

Publication Publication Date Title
WO2002090917A2 (fr) Dispositif de fuite test
US6774613B1 (en) Semiconductor gas sensor, gas sensor system and method of gas analysis
EP1456620B1 (fr) Systeme de passage de gaz comprenant des surfaces de passage de gaz agissant de fa on selective
EP2024723B1 (fr) Détecteur de gaz muni d'une membrane chauffante à perméabilité sélective au gaz
Sachtler et al. The Resistance of Nickel Films as Affected by the Adsorption of Hydrogen. Evidence of two adsorption states
DE4308244A1 (en) Heat treatment and sintering in controlled atmos for prodn. of dental prostheses - using oven comprising inverted cup-shaped quartz vessel surrounded by heating coil and insulation and sealed to baseplate by heat-resisting O=rings
AT524248B1 (de) Verfahren zur Züchtung von Kristallen
Bröcker et al. Calorimetric studies of the chemisorption and desorption of hydrogen on nickel films under ultra high vacuum conditions
US4719073A (en) Method of monitoring an article in sintering furnace
DE3887541T2 (de) Thermischer Leitfähigkeitsdetektor.
EP0215302A2 (fr) Système de détermination d'une densité absolue par la méthode de la flottabilité
Geerken et al. Concentration and temperature dependence of the electrical resistivity of quenched PdHx
EP3523637B1 (fr) Microsysteme thermiquement isolant
DE1573263A1 (de) Verfahren und Vorrichtung zum Bestimmen der Reaktionswaerme
US4343176A (en) Long-life leak standard assembly
DE2340055C2 (de) Verfahren und Einrichtung zum Einstellen einer im negativen Temperaturbereich liegenden Temperatur
DE3400458A1 (de) Kalt-probenaufgabesystem fuer die kapillargaschromatographie
Narayana et al. Effect of hydrogen chemisorption on the electrical conductivity of zinc oxide powder
DE112020005398T5 (de) Gaserfassungsvorrichtung, gaserfassungsverfahren und vorrichtung mit gaserfassungsvorrichtung
DE3942664A1 (de) Sensoranordnung
EP0869353B1 (fr) Procédé de fabrication d'un capteur
DE102020123664B4 (de) Vorrichtung zur variablen Temperatureinstellung in einem Durchflusskryostaten
DE2904409A1 (de) Verfahren und vorrichtung zur aufrechterhaltung eines konstanten puffergas-druckes in gaslasern
Flynn et al. Temperature gradients in horizontal tube furnaces
DE1615869A1 (de) Verfahren zur Stabilisierung des Widerstandes von Halbleitern

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TN TR TT TZ UA UG US UZ VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP