WO2002082184A1 - Silicon-containing acetal protected polymers and photoresists compositions thereof - Google Patents

Silicon-containing acetal protected polymers and photoresists compositions thereof Download PDF

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Publication number
WO2002082184A1
WO2002082184A1 PCT/US2002/010639 US0210639W WO02082184A1 WO 2002082184 A1 WO2002082184 A1 WO 2002082184A1 US 0210639 W US0210639 W US 0210639W WO 02082184 A1 WO02082184 A1 WO 02082184A1
Authority
WO
WIPO (PCT)
Prior art keywords
polymer
hydroxystyrene
monomer
monomer unit
silicon
Prior art date
Application number
PCT/US2002/010639
Other languages
English (en)
French (fr)
Inventor
Andrew Joseph Blakeney
Sanjay Malik
Stephanie Dilocker
John Ferri
Jeffery Eisele
Original Assignee
Arch Specialty Chemicals, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arch Specialty Chemicals, Inc. filed Critical Arch Specialty Chemicals, Inc.
Priority to JP2002579890A priority Critical patent/JP2004519734A/ja
Priority to EP02717772A priority patent/EP1299773A4/en
Publication of WO2002082184A1 publication Critical patent/WO2002082184A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/42—Block-or graft-polymers containing polysiloxane sequences
    • C08G77/442—Block-or graft-polymers containing polysiloxane sequences containing vinyl polymer sequences
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
PCT/US2002/010639 2001-04-04 2002-04-04 Silicon-containing acetal protected polymers and photoresists compositions thereof WO2002082184A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002579890A JP2004519734A (ja) 2001-04-04 2002-04-04 ケイ素含有アセタール保護ポリマーおよびそのフォトレジスト組成物
EP02717772A EP1299773A4 (en) 2001-04-04 2002-04-04 SILICLE-CONTAINING ACETAL PROTECTIVE POLYMERS AND PHOTORESISTAL COMPOSITIONS THEREOF

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US28129501P 2001-04-04 2001-04-04
US60/281,295 2001-04-04

Publications (1)

Publication Number Publication Date
WO2002082184A1 true WO2002082184A1 (en) 2002-10-17

Family

ID=23076695

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/010639 WO2002082184A1 (en) 2001-04-04 2002-04-04 Silicon-containing acetal protected polymers and photoresists compositions thereof

Country Status (5)

Country Link
US (1) US6783917B2 (US06783917-20040831-C00023.png)
EP (1) EP1299773A4 (US06783917-20040831-C00023.png)
JP (1) JP2004519734A (US06783917-20040831-C00023.png)
KR (1) KR20030076225A (US06783917-20040831-C00023.png)
WO (1) WO2002082184A1 (US06783917-20040831-C00023.png)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1457822A2 (en) * 2003-03-04 2004-09-15 Fuji Photo Film Co., Ltd. Positive resist composition
US6941381B2 (en) 2001-03-31 2005-09-06 Redback Networks Inc. Method and apparatus for sync hunting signals
EP1795963A1 (en) * 2005-12-09 2007-06-13 Fujifilm Corporation Positive resist composition and pattern forming method using the same
EP1795961A1 (en) 2005-12-09 2007-06-13 Fujifilm Corporation Positive resist composition and pattern making method using the same
EP2031446A1 (en) * 2007-08-30 2009-03-04 Fujitsu Limited Resist composition for immersion exposure and method for manufacturing a semiconductor device using the same
WO2013007442A1 (en) * 2011-07-08 2013-01-17 Asml Netherlands B.V. Lithographic patterning process and resists to use therein

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003031566A (ja) * 2001-07-16 2003-01-31 Fujitsu Ltd 低誘電率絶縁膜形成用組成物、これを用いる絶縁膜形成方法、及びそれにより得られた絶縁膜を有する電子部品
US6989224B2 (en) * 2001-10-09 2006-01-24 Shipley Company, L.L.C. Polymers with mixed photoacid-labile groups and photoresists comprising same
TWI307819B (en) * 2002-05-28 2009-03-21 Arch Spec Chem Inc Acetal protected polymers and photoresist compositions thereof
ATE446530T1 (de) * 2003-03-31 2009-11-15 Fujifilm Corp Positiv arbeitende resistzusammensetzung
JP4798938B2 (ja) * 2003-04-11 2011-10-19 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． フォトレジストシステム
US7141692B2 (en) 2003-11-24 2006-11-28 International Business Machines Corporation Molecular photoresists containing nonpolymeric silsesquioxanes
US7399581B2 (en) * 2005-02-24 2008-07-15 International Business Machines Corporation Photoresist topcoat for a photolithographic process
US7875415B2 (en) * 2005-12-30 2011-01-25 Intel Corporation Helical pixilated photoresist
EP2197840B1 (en) 2007-10-10 2013-11-06 Basf Se Sulphonium salt initiators
US8778278B2 (en) * 2009-07-15 2014-07-15 General Electric Company Non bio-adhesive polymer coating composition, articles and devices thereof
CN102781911B (zh) 2010-02-24 2015-07-22 巴斯夫欧洲公司 潜酸及其用途
KR102160791B1 (ko) * 2014-02-03 2020-09-29 삼성디스플레이 주식회사 블록 공중합체 및 이를 사용한 패턴 형성 방법
WO2016124493A1 (en) 2015-02-02 2016-08-11 Basf Se Latent acids and their use
US9857684B2 (en) * 2016-03-17 2018-01-02 Taiwan Semiconductor Manufacturing Co., Ltd. Silicon-containing photoresist for lithography
JP7349887B2 (ja) * 2019-10-31 2023-09-25 東京応化工業株式会社 ハードマスク形成用組成物及び電子部品の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09236920A (ja) * 1996-02-28 1997-09-09 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
US6136502A (en) * 1997-10-08 2000-10-24 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
US6359078B1 (en) * 1998-08-18 2002-03-19 3M Innovative Properties Company Polymers having silicon-containing acetal or ketal functional groups

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
JP3030672B2 (ja) 1991-06-18 2000-04-10 和光純薬工業株式会社 新規なレジスト材料及びパタ−ン形成方法
EP0659781A3 (de) 1993-12-21 1995-09-27 Ciba Geigy Ag Maleinimidcopolymere, insbesonder für Photoresists.
US5558971A (en) 1994-09-02 1996-09-24 Wako Pure Chemical Industries, Ltd. Resist material
US5478899A (en) * 1994-10-27 1995-12-26 Shell Oil Company Alkoxy silyl capping agents for making terminally functionalized polymers
DE69515163D1 (de) 1994-12-20 2000-03-30 Olin Microelectronic Chem Inc Fotolackzusammensetzungen
DE69516101T2 (de) 1994-12-20 2001-01-11 Arch Speciality Chemicals Inc Vernetzte Polymere
US5593812A (en) 1995-02-17 1997-01-14 International Business Machines Corporation Photoresist having increased sensitivity and use thereof
EP0738744B1 (en) 1995-04-21 2002-11-27 Arch Specialty Chemicals, Inc. Cross-linked polymers
US5886119A (en) 1995-08-08 1999-03-23 Olin Microelectronic Chemicals, Inc. Terpolymers containing organosilicon side chains
EP0780732B1 (en) 1995-12-21 2003-07-09 Wako Pure Chemical Industries Ltd Polymer composition and resist material
US5861231A (en) 1996-06-11 1999-01-19 Shipley Company, L.L.C. Copolymers and photoresist compositions comprising copolymer resin binder component
US5985524A (en) 1997-03-28 1999-11-16 International Business Machines Incorporated Process for using bilayer photoresist
US6159653A (en) 1998-04-14 2000-12-12 Arch Specialty Chemicals, Inc. Production of acetal derivatized hydroxyl aromatic polymers and their use in radiation sensitive formulations
JP3798552B2 (ja) 1998-04-23 2006-07-19 東京応化工業株式会社 化学増幅型ホトレジスト
US6146793A (en) 1999-02-22 2000-11-14 Arch Specialty Chemicals, Inc. Radiation sensitive terpolymer, photoresist compositions thereof and 193 nm bilayer systems
US6323287B1 (en) 1999-03-12 2001-11-27 Arch Specialty Chemicals, Inc. Hydroxy-amino thermally cured undercoat for 193 NM lithography
US6054248A (en) 1999-03-12 2000-04-25 Arch Specialty Chemicals, Inc. Hydroxy-diisocyanate thermally cured undercoat for 193 nm lithography
US6165682A (en) 1999-09-22 2000-12-26 Arch Specialty Chemicals, Inc. Radiation sensitive copolymers, photoresist compositions thereof and deep UV bilayer systems thereof
JP3736606B2 (ja) 1999-10-21 2006-01-18 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP2001154359A (ja) * 1999-11-29 2001-06-08 Fuji Photo Film Co Ltd ポジ型レジスト積層物
JP3839218B2 (ja) * 2000-03-31 2006-11-01 信越化学工業株式会社 珪素含有化合物、レジスト組成物およびパターン形成方法
JP2002062660A (ja) * 2000-08-16 2002-02-28 Fuji Photo Film Co Ltd 平版印刷版原版

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09236920A (ja) * 1996-02-28 1997-09-09 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
US6136502A (en) * 1997-10-08 2000-10-24 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
US6359078B1 (en) * 1998-08-18 2002-03-19 3M Innovative Properties Company Polymers having silicon-containing acetal or ketal functional groups

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1299773A4 *

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6941381B2 (en) 2001-03-31 2005-09-06 Redback Networks Inc. Method and apparatus for sync hunting signals
EP1457822A3 (en) * 2003-03-04 2004-09-22 Fuji Photo Film Co., Ltd. Positive resist composition
EP1457822A2 (en) * 2003-03-04 2004-09-15 Fuji Photo Film Co., Ltd. Positive resist composition
US8697329B2 (en) 2005-12-09 2014-04-15 Fujifilm Corporation Positive resist composition and pattern forming method using the same
EP1795963A1 (en) * 2005-12-09 2007-06-13 Fujifilm Corporation Positive resist composition and pattern forming method using the same
EP1795961A1 (en) 2005-12-09 2007-06-13 Fujifilm Corporation Positive resist composition and pattern making method using the same
US7368220B2 (en) 2005-12-09 2008-05-06 Fujifilm Corporation Positive resist composition and pattern forming method using the same
US7504194B2 (en) 2005-12-09 2009-03-17 Fujifilm Corporation Positive resist composition and pattern making method using the same
US7790351B2 (en) 2005-12-09 2010-09-07 Fujifilm Corporation Positive resist composition and pattern making method using the same
TWI453541B (zh) * 2005-12-09 2014-09-21 Fujifilm Corp 正型光阻組成物及使用它之圖案製作方法
EP2031446A1 (en) * 2007-08-30 2009-03-04 Fujitsu Limited Resist composition for immersion exposure and method for manufacturing a semiconductor device using the same
WO2013007442A1 (en) * 2011-07-08 2013-01-17 Asml Netherlands B.V. Lithographic patterning process and resists to use therein
US9261784B2 (en) 2011-07-08 2016-02-16 Asml Netherlands B.V. Lithographic patterning process and resists to use therein

Also Published As

Publication number Publication date
US6783917B2 (en) 2004-08-31
EP1299773A1 (en) 2003-04-09
EP1299773A4 (en) 2006-06-21
US20030065101A1 (en) 2003-04-03
JP2004519734A (ja) 2004-07-02
KR20030076225A (ko) 2003-09-26

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