WO2002049009A2 - Procede photolithographique permettant de produire des disques, cartes et autres elements optiques originaux pourvus de micro-reliefs et dispositifs microminiaturises - Google Patents

Procede photolithographique permettant de produire des disques, cartes et autres elements optiques originaux pourvus de micro-reliefs et dispositifs microminiaturises Download PDF

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Publication number
WO2002049009A2
WO2002049009A2 PCT/IL2001/001156 IL0101156W WO0249009A2 WO 2002049009 A2 WO2002049009 A2 WO 2002049009A2 IL 0101156 W IL0101156 W IL 0101156W WO 0249009 A2 WO0249009 A2 WO 0249009A2
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WIPO (PCT)
Prior art keywords
photoresist layer
radiation
photoresists
spatial
pattern
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PCT/IL2001/001156
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English (en)
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WO2002049009A3 (fr
Inventor
Eugene Levich
Sergei Magnitskii
Vladimir Kozenkov
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Consellation Trid Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Consellation Trid Inc. filed Critical Consellation Trid Inc.
Priority to AU2002222484A priority Critical patent/AU2002222484A1/en
Priority to AU2002222484A priority patent/AU2002222484A8/en
Publication of WO2002049009A2 publication Critical patent/WO2002049009A2/fr
Publication of WO2002049009A3 publication Critical patent/WO2002049009A3/fr

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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/18Diffraction gratings
    • G02B5/1847Manufacturing methods
    • G02B5/1857Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26Apparatus or processes specially adapted for the manufacture of record carriers
    • G11B7/261Preparing a master, e.g. exposing photoresist, electroforming

Definitions

  • the present invention relates to a modified photolithographic technology for production of micro-relief optical original discs, for instance such as CD-ROM (Compact Disc - Read-Only Memory) or DVD-ROM (Digital Versatile Disc - Readonly Memory) designed for mass replication of optical memory devices for audio-, video- and other information widely used at home and in industry.
  • CD-ROM Compact Disc - Read-Only Memory
  • DVD-ROM Digital Versatile Disc - Readonly Memory
  • the invention relates to methods for checking writing modes and adjusting the quality of information recorded in real time on the original disc using the DRAW (Direct-Read-After- Write) procedure and/or optimization of development regimes for the exposed photoresist layer of the original disc through obseivation in the process or immediately thereafter of the latent image of information pit precursors formed in the layer.
  • DRAW Direct-Read-After- Write
  • the present invention also relates to photolithographic production of generally diverse diffractive optical original elements and original micro- miniaturized devices with a relief microstructure that are further used to produce stampers therefrom and mass replication of said elements and microdevices by known methods such as injection compression moulding or photopolymerization "2P" process.
  • the micro-relief pattern can be formed in the photoresist layer by
  • Micro-relief optical discs like CD ROM and DVD ROM owing to their cheapness and simplicity have found wide application for mass replication of domestic audio- and videoinformation like pieces of music, films or TV programs for a large number of users.
  • the process for fabricating a micro-relief original disc plays an important role determining the quality of reproducible video- and audio-information and economic aspects of the ROM production process [G. Bouwhuis et al., "Principles of Optical Disc Systems", Adam Hilger Ltd., Bristol and Boston].
  • first original disc is produced as a glass substrate with a micro-relief (information pits) in the developed photoresist layer
  • said OD is converted to a master disc by chemical or vacuum metallic coating with subsequent replication of said master disc through production of daughter metal copies (stampers) to be used for OD mass replication by means of injection compression moulding [P.E.J. Legierse, Trans. Inst. Met. Finish., 65 (1985), 13] or photopolymerization "2P' process [Haverkorn van Rijsewijk et al., Philips Tech. Rev., 40 (1982), 287; Kloosterboer et al., Philips Tech. Rev., 40 (1982), 298]. Therefore, the OD production process significantly defines the quality of the information reproduced from plastic copies and economic aspects of the entire production process at the initial stage of the process cycle.
  • ODs are produced by photolithographic process using as a rule positive photoresists as a recording medium [P.L.M. Put et al., Proc. SPIE-Int. Soc. Opt. Eng., 1663 (1992), 38]. Said OD process is multistage. It involves cleaning of the glass
  • a thin layer of silver or nickel is then applied onto the OD micro-relief surface using wet chemical or vacuum procedure to generate a master disc with subsequent quality control of said master disc through reflection reading thereof. In case of positive control results, said master disc is used to produce stampers.
  • the quality control of information pits of the generated OD is performed upon completion of writing, development and metal coating thereof, i.e. after a master disc is produced. This prevents a possibility of active intruding in (adjustment of) the process of data writing and photoresist developing resulting in a potential significant reduction in the yield of good products and increasing the net cost thereof.
  • the photolithographic process used in OD production is significantly different from the well-known process of optical microlithography applied for mass production of integrated circuits.
  • high-quality diffraction-limited optics with a numerical aperture of up to 0.8 is required. Said optics can ensure formation of the reading spot in the plane of the light-sensitive photoresist layer with a diameter of the order of 0.3-0.35 ⁇ m at half power against the power in the spot center. This necessitates precision of generation and adjustment of the recording laser beam.
  • the time of exposing one information element or pit does not exceed 100 ns while radiation power density measures units of MW/cm 2 .
  • the photoresist layer thickness in OD (130-150 nm) is approximately of the order of magnitude less than that generally used in standard IC techniques.
  • Rigid allowances are imposed not only on the absolute size of the layer thickness but on spatial surface fluctuations of said thickness as well. Said thickness fluctuations along with deviations in exposure and development regime parameters can lead to deformations in the size of information pits generated in the photosensitive layer resulting in occurrence of noises at reading that distort the information signal.
  • the signal-to-noise ratio is restricted by the surface roughness and deviations in geometrical size of nanometer-sized information pits [J.P. J. Heemskerk,
  • a possible nondestructive method to control data recording can be an extra irradiation of the exposed OD by chemically inactive monochromatic X-ray or hard UV radiation with the wavelength ranging from decimal fractions to hundreds of Angstroms and registration of intensity of the secondary electron flux [U.S. Patent No 4,670,650 (1987)].
  • Said procedure is based on the electron (photoelectron) spectroscopy widely used in analytical chemistry for determining substance composition.
  • positive photoresists based on photosensitive substances, for instance naphthoquinone diazides are exposed to activating radiation with the wavelength less than 500 nm, there occurs photodestruction of the latter with the release of molecular nitrogen diffusing from the layer.
  • the latent image is formed as different concentrations of nitrogen atoms in exposed and non-exposed regions in the photoresist layer.
  • the known method allows a contactless control of topology of the pattern generated in the photoresist layer but is difficult for practical realization as it requires application of high-resolution electron spectrometers.
  • said method is applicable only to the photolithographic technology using photoresists capable of changing their chemical composition, such as naphthoquinone-diazide-based photoresists. Said method is not applicable to photolithographic processes using for instance such negative photoresists as polyvinyl
  • the present invention relates to a modified photolithographic technology for production of micro-relief optical original discs of for example CD- or DVD-ROM- type, as well as in a broader sense to a photolithographic technology for production of various micro-relief diffraction optical elements and micro-miniaturized instruments with a micro-relief microstructure used to obtain stampers therefrom and further mass replication of said optical elements by known techniques, such as compression moulding or photo polymerization.
  • the purpose of the invention is to develop a contactless nondestructive procedure for controlling and adjusting the quality of recorded information as a spatial volumetric topology of a latent image of OD information pit precursors or other micro-relief regions of diverse diffraction elements and micro-miniaturized devices formed in the photoresist layer as differences in optical properties manifested in exposed and non- exposed regions of the photoresist layer.
  • the aim is achieved by that in the proposed method including exposure of the photoresist layer to scanning across its surface by focused photochemically active radiation carrying recorded information and reading of the generated thereby latent image of precursors of information pits or micro-relief regions by means of irradiation of the disc surface by focused photochemically inactive radiation scanned synchronously with the recording radiation, exposure and reading are done by polaiized radiation using at the final stage of an extra polarizer disposed between the OD or other product being generated and the photodetector recording the reading radiation incident on said photodetector.
  • a pattern of information pit or micro-relief microregions is generated as a latent anisotropic phase (birefringent) spatially modulated pattern on the isotropic background.
  • the invention provides a bit-by-bit quality control of the recorded information directly in the process of photolithographic formation of the original product in real time scale by means of the DRAW technology used for WORM (Write-Once/Read- Many) optical disc writing.
  • the invention provides control and adjustment of the quality of recorded information through converting the latent phase, spatially modulated pattern by means of polarized photochemically inactive radiation into an amplitude, spatially intensity- modulated pattern using a polarizer-analyzer disposed between the generated original product and the photodetector.
  • the subject of the invention is use of precisely measured parameters of latent phase pattern to ensure a feedback for adjusting the power of recording radiation, waveshaping thereof (pit exposure profiles) and the quality of focusing of the objective lens.
  • the invention provides use of data obtained from quality control of recorded information, following computer processing, to optimize development regimes (selection of component composition for the developer, temperature and time of development, etc.) for the photoresist layer of the original product to produce a preset spatial volumetric profile for information pits of OD and other original microrelief products being formed.
  • the invention provides polarization writing of original products by means of contact or projection printing via a photomask.
  • the subject of the invention is use of a CCD camera for a selection or total quality control of spatial topology of the latent image of the phase pattern of data recorded on the surface of original products upon completion of recording and prior to development of the photoresist layer.
  • the subject of the invention is use of data obtained from control of latent image topology using a CCD camera to optimize the photoresist layer development regime.
  • the subject of the invention is use as photoresists of positive photoresists from the naphthoquinone diazide classes, negative photoresists from the class of polyvinyl cinnamate and derivatives thereof, azides like 2,6-bis(4-azidobenzilidene)- 4-methylcyclohexanone and derivatives thereof, and negative inorganic photoresists like amorphous chalcogenide semiconductors of As 2 Se 3 .
  • the invention provides doping said organic photoresists with special photosensitive substances, for instance azo dyes, absorbing in the photosensitivity range of photoresists and manifesting an effect of photoinduced birefringence under the action of activating radiation.
  • special photosensitive substances for instance azo dyes
  • Fig. 1 is schematic view illustrating production of a master disc using a prior art (a) process and the proposed (b) technology.
  • Fig. 2 is an absorption spectrum of the FP-383 positive photoresist prior (Curve 1) and following (Curves 2 and 3) radiation by polarized light (405 nm).
  • Fig. 3 is kinetics of bleaching (T) of the FP-383 photoresist layer at 405 nm following polarized light radiation at the same wavelength (Curve 1) and respective
  • Fig. 4 is birefringence induction kinetics in polyvinyl cinnamate derivative films (Curve 1) and amorphous chalcogenide semiconductor As 2 Se 3 (Curve 2).
  • Fig. 5 is a cross-sectional view of the exposed to polarized radiation OD with a photoresist.
  • Fig. 6 is a photograph of a latent polarization image generated in the photoresist layer.
  • Fig. 7 is an embodiment of the device for data writing on a micro-relief OD in real time.
  • Fig. 8 is an embodiment of the device for OD writing quality control enabling checking spatial topology of the latent image of precursors of written information pits prior to the OD development.
  • Fig. 9 is a schematic representation of the correlation between one- dimensional spatial profile of exposure energy distribution at writing of an information pit in the photoresist layer (A), profile of latent anisotropic image of the information pit precursor (B), profile of spatial concentration distribution for products of photochemical reaction (C) following exposure and one-dimensional geometric profile of respective developed information pit (D).
  • Fig. 1 shows process stages for fabricating a master disk using the prior-art (a) and the proposed (b) technologies. It can be seen that the known process utilizing a photoresist as a recording medium to check the quality of information written on an OD demands preliminary development and metallic coating of the photoresist layer after completing data writing thereon. It allows no adjustment of the writing quality of the information pit immediately in the writing process or quality control of the filly exposed (written) OD prior to development thereof in order to optimize the regimes of the latter. In compliance with the proposed technology, non-destructive control of the latent image of information pit precursors is possible directly in the process of data writing on the OD enabling an active intervention in the writing process and correction thereof. In addition, a partial or complete computer analysis of the latent image quality of future information pits in order to optimize development regimes of the recorded OD.
  • Figs.2-8 explain practicability of said process.
  • the amount of anisotropy induced in the layer depends on the exposure energy while the direction of the optical axis is determined by the direction of the polarization vector of activating radiation (as a rale, perpendicular to the polarization vector) or propagation direction thereof for non-polarized radiation.
  • photosensitive anisotropic substances for instance azo dyes, absorbing in the range of said organic photoresists and manifesting the effect of photoinduced anisotropy can be added thereto.
  • BR Birefringence
  • OD recording quality control is performed by means of photochemically inactive polarized radiation through converting the latent phase image of information pit precursors to an amplitude pattern using a polarizer-analyzer disposed between the OD and the photodetector.
  • Spatial intensity distribution of the reading radiation (I(x,y)) transmitted through the latent image of the information pit precursor and the analyzer is defined by the magnitude of BR induced in the process of writing:
  • Io is intensity of reading radiation incident on the OD
  • Const Io x ( ⁇ d/ ⁇ ) 2 and X ,Y are space coordinates in the plane of the photoresist layer.
  • Figure 3 also shows a kinetic curve of the photoresist layer transmission (T) variation during irradiation at the activation wavelength (Curve 2) unambiguously characterizing the kinetic process of accumulation of products of photochemical reaction (Nfp) and the function of the depth of etching in the layer ( ⁇ d) (Curve 3) measured for certain regimes of layer formation, exposure and development. It can be seen from Fig. 2, Curves 2 and 3; Fig. 3, Curve 2).
  • T photoresist layer transmission
  • Nfp unambiguously characterizing the kinetic process of accumulation of products of photochemical reaction
  • ⁇ d the function of the depth of etching in the layer
  • FIG. 9 schematically illustrates correlation between a one-dimensional spatial profile of exposure energy distribution H(x) of information pits normalized to the exposure level in the center of laser writing spot (A), profile of the latent anisotropic image of the information pit precursor as induced in the layer BR ⁇ n (x) (B) and profile of spatial concentration distribution for products of the photochemical reaction Nfp (x) formed under the action of said writing spot (C).
  • Fig. 4 provides a cross-sectional view of an OD with a photoresist layer exposed to polarized activating radiation.
  • Arrow 1 indicates direction of the optical axis in the exposed and nondeveloped area (information pit precursor) 2 of the photoresist layer 3 on the glass substrate 4, while isotropic, nonexposed areas 5 are shown by crossing arrows 6.
  • Fig. 4 provides a cross-sectional view of an OD with a photoresist layer exposed to polarized activating radiation.
  • Arrow 1 indicates direction of the optical axis in the exposed and nondeveloped area (information pit precursor) 2 of the photoresist layer 3 on the glass substrate 4, while isotropic, nonexposed areas 5 are shown by crossing arrows 6.
  • Fig. 5 provides a cross-sectional view of an OD with a photoresist layer exposed to polarized activating radiation.
  • Arrow 1 indicates direction of the optical axis in the exposed and nondeveloped area (information pit precursor) 2 of the photoresist layer 3 on the glass substrate 4, while
  • FIG. 6 exemplifies a photograph of the latent polarized image of the transparency written by polarized photochemically active radiation (the wavelength is less than 450 nm) on the FP-383 positive photoresist and visualized via the analyzer by polarized photochemically inactive visible radiation (the wavelength is more than 550 nm).
  • Figs. 7 and 8 represent a schematic illustration of two possible embodiments of the system for micro-relief OD recording on a photoresist using the proposed method for control and adjustment of the quality of information pits. The embodiment presented in Fig. 7 enables control and adjustment of the bit- by-bit writing mode by means of DRAW data retrieval in real time scale.
  • modulator 13 modulates the polarized by polarizer 12 laser beam 11 by means of information signal 14.
  • Modulated writing beam 15 is focused by objective lens 16 on the photoresist layer 17 applied onto the surface of a glass disk 18 rotating at a certain speed.
  • objective lens 16 As shown earlier, there occurs an anisotropic photochemical reaction in the photoresist layer and in the exposed microregion precursors of information pits are generated as a birefringent space-modulated pattern against the isotropic background.
  • phase information pit precursors are determined by the magnitude and spatial distribution of the recording pulse energy. (Dependence of the BR size on exposure energy is illustrated in Figs. 3 and 4.) The latter is determined by the appropriate modulation code 14 and the quality of the focusing optics 16.
  • the latent image of these phase information pit precursors is read bit by bit, in real time scale by focused photochemically inactive laser radiation 19 (for instance, from a He-Ne laser 20 with the wavelength of 632.8 nm).
  • the reading beam 19 is converted by means of polarizer 21 to a linearly polarized beam 22 and passing through a dichroic mirror 23 is focused by means of the objective lens 16 in the focusing area of the writing beam 15 on the photoresist layer 17.
  • the linearly polarized reading beam 22 Having passed through the OD micro-region with the latent anisotropic image of information pit precursor recorded therein, the linearly polarized reading beam 22 converts to an elliptically polarized beam 24 that partly passes through the analyzer 25.
  • the objective lens 26 projects the visualized image of the information pit precursor onto the photoelectric detector 27.
  • the detected playback signal 28 provides real-time information of critical mastering parameters, such as, HF amplitudes, asymmetry, and after decoding, digital error rate.
  • the real-time information is used to create a closed-loop feedback system, such that appropriate record power laser 29 and pit exposure profiles (objective lens 16) are used during the mastering process.
  • the proposed method for precision measurement of real-time latent image parameters of information pit precursors allows a feedback by means of adjustment the power of recording radiation, waveshaping thereof (pit exposure profiles) and the quality of focusing of the objective lens 16.
  • the OD writing quality control data can be also used to optimize OD development regimes (developer composition, temperature, time of development, etc.). This is possible because at development kinetics of accumulation of products of the photochemical reaction and the size of BR induced in the photoresist layer, as well as the etching depth thereof are unambiguously dependent on the exposure energy for preset parameters of exposure (relative ambient humidity, power density of the activating radiation, etc.) and development regimes (Fig. 9).
  • Fig. 8 illustrates another embodiment of the proposed method wherein a CCD camera 30 is used as a photodetector 27.
  • a possibility is provided for a selection or, if necessary, total control of the spatial topology quality of latent images of information pit precursors on the surface of OD 31 upon completion of writing thereof.
  • the scheme of retrieval illustrated in Fig. 8 is identical to the one given in Fig. 7 and also comprises a polarizer 21 and analyzer 25 while the objective lens 16 simultaneously reads a few thousand latent images of information pit precursors which by means of objective lens 26 are projected in the plane of the CCD camera 30. If necerney, the entire surface of the OD 31 can be controlled in this way.
  • Said possibility of analysis of 28 latent images of information pit precursors prior to the development enables optimization of OD development conditions (developer composition, temperature, time of development, etc.) after recording with taking into consideration of, for instance, regimes of baking of the photoresist layer prior to exposure, averaged exposure radiation intensity data, spatial radiation distribution (topology) in the focused exposure spot and corresponding size and spatial distribution (topology) of birefringence in precursors of information pits.
  • OD development conditions developer composition, temperature, time of development, etc.
  • the present invention relates to photolithographic production of diverse diffractive optical original elements and micro-miniaturized original devices with a micro-relief structure applied for fabricating stampers therefrom and further replication of said elements and micro- devices using known methods, for instance injection compression moulding.
  • the micro-relief pattern can be formed in the photoresist layer by either scanning by specified law of photochemically active radiation focused across the photoresist surface and contact or projection exposure of the photoresist layer via an appropriate photomask.
  • Diffractive optical elements originals of which can be fabricated by the method proposed in this invention, are in particular exemplified by kinoforms, synthetic surface relief holograms, phase gratings and binary optics that replace or improve conventional optical components in various application fields, such as projection LC displays in military aircraft, optical storage devices, optoelectronic modules for data communications, laser systems, ophthalmic products for the vision impaired, et al.
  • Micro-miniaturized devices with a relief microstructure are exemplified by microcuvettes used in pharmaceutical industry for drug formulation and testing. Quality control or even adjustment for the latent image of said elements or microdevices could be realized either in real time as illustrated, for instance in Fig. 7, or upon completing the process of exposure using a CCD camera, as illustrated in Fig. 8.
  • the proposed invention allows one to obtain in advance statistical data on correlation between the geometric size and spatial profile of latent pattern images generated in the photoresist layer, the geometric size and spatial profile of the relief patterns obtained after the development of the photoresist layer and development conditions thereof.
  • This invention enables automatic control of the photolithographic process through establishing a dynamic connection between the precision control of photoresist application, annealing, exposure and development regimes. This ensures proper size of the products formed, fast readjustment of photolithographic equipment to produce another product, higher yield of effective products and reduction of prices thereof at the expense of reduced material consumption and production time.

Abstract

La présente invention concerne un procédé non destructif et sans contact permettant de vérifier et de régler la qualité d'une topologie volumétrique spatiale de l'image modèle latente servant de modèle spatial de micro-cuvettes d'informations de précurseurs originaux de disque optique ou de modèle de précurseurs de régions à micro-reliefs de divers éléments optiques à diffraction et de dispositifs originaux microminiaturisés qui sont produits par voie photolithographique dans une couche de résine photosensible et sont conçus pour une production ultérieure de matrices de ceux-ci et pour une reproduction en masse mettant en oeuvre un moulage par injection ou une photopolymérisation. Ce procédé consiste à éclairer la couche de résine photosensible en utilisant un rayonnement polarisé chimiquement actif, qui porte des informations concernant la future microstructure spatiale de divers produits originaux à micro-reliefs, puis à reproduire la topologie spatiale produite dans la couche avant le développement de la couche exposée, en utilisant un rayonnement à nouveau polarisé, mais cette fois non chimiquement actif.
PCT/IL2001/001156 2000-12-12 2001-12-12 Procede photolithographique permettant de produire des disques, cartes et autres elements optiques originaux pourvus de micro-reliefs et dispositifs microminiaturises WO2002049009A2 (fr)

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AU2002222484A AU2002222484A1 (en) 2000-12-12 2001-12-12 Photolithographic method including measurement of the latent image
AU2002222484A AU2002222484A8 (en) 2000-12-12 2001-12-12 Photolithographic method including measurement of the latent image

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US25453900P 2000-12-12 2000-12-12
US60/254,539 2000-12-12

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EP1564734A1 (fr) * 2002-11-20 2005-08-17 Sony Corporation Procede pour produire une matrice utilisee pour la production d'un disque optique, et procede de production de disque optique
WO2006045332A1 (fr) * 2004-10-27 2006-05-04 Singulus Mastering B.V. Processus de masterisation utilisant des materiaux a changement de phase
US20100136468A1 (en) * 2007-03-02 2010-06-03 Josephus Marinus Wijn Diffraction order measurement
US8119043B2 (en) * 2003-01-09 2012-02-21 Sony Corporation Method of making master for manufacturing optical disc and method of manufacturing optical disc
US9275671B2 (en) 2011-06-09 2016-03-01 Case Western Reserve University Optical information storage medium

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EP1564734A1 (fr) * 2002-11-20 2005-08-17 Sony Corporation Procede pour produire une matrice utilisee pour la production d'un disque optique, et procede de production de disque optique
EP1564734A4 (fr) * 2002-11-20 2007-10-31 Sony Corp Procede pour produire une matrice utilisee pour la production d'un disque optique, et procede de production de disque optique
US7648671B2 (en) 2002-11-20 2010-01-19 Sony Corporation Method of making master for manufacturing optical disc and method of manufacturing optical disc
US8119043B2 (en) * 2003-01-09 2012-02-21 Sony Corporation Method of making master for manufacturing optical disc and method of manufacturing optical disc
WO2006045332A1 (fr) * 2004-10-27 2006-05-04 Singulus Mastering B.V. Processus de masterisation utilisant des materiaux a changement de phase
US20100136468A1 (en) * 2007-03-02 2010-06-03 Josephus Marinus Wijn Diffraction order measurement
US9275671B2 (en) 2011-06-09 2016-03-01 Case Western Reserve University Optical information storage medium

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AU2002222484A8 (en) 2012-02-02
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