WO2002049009A3 - Procede photolithographique permettant de produire des disques, cartes et autres elements optiques originaux pourvus de micro-reliefs et dispositifs microminiaturises - Google Patents

Procede photolithographique permettant de produire des disques, cartes et autres elements optiques originaux pourvus de micro-reliefs et dispositifs microminiaturises Download PDF

Info

Publication number
WO2002049009A3
WO2002049009A3 PCT/IL2001/001156 IL0101156W WO0249009A3 WO 2002049009 A3 WO2002049009 A3 WO 2002049009A3 IL 0101156 W IL0101156 W IL 0101156W WO 0249009 A3 WO0249009 A3 WO 0249009A3
Authority
WO
WIPO (PCT)
Prior art keywords
latent image
measurement
method including
photolithographic method
including measurement
Prior art date
Application number
PCT/IL2001/001156
Other languages
English (en)
Other versions
WO2002049009A2 (fr
Inventor
Eugene Levich
Sergei Magnitskii
Vladimir Kozenkov
Original Assignee
Consellation Trid Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Consellation Trid Inc. filed Critical Consellation Trid Inc.
Priority to AU2002222484A priority Critical patent/AU2002222484A1/en
Priority to AU2002222484A priority patent/AU2002222484A8/en
Publication of WO2002049009A2 publication Critical patent/WO2002049009A2/fr
Publication of WO2002049009A3 publication Critical patent/WO2002049009A3/fr

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/18Diffraction gratings
    • G02B5/1847Manufacturing methods
    • G02B5/1857Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26Apparatus or processes specially adapted for the manufacture of record carriers
    • G11B7/261Preparing a master, e.g. exposing photoresist, electroforming

Abstract

La présente invention concerne un procédé non destructif et sans contact permettant de vérifier et de régler la qualité d'une topologie volumétrique spatiale de l'image modèle latente servant de modèle spatial de micro-cuvettes d'informations de précurseurs originaux de disque optique ou de modèle de précurseurs de régions à micro-reliefs de divers éléments optiques à diffraction et de dispositifs originaux microminiaturisés qui sont produits par voie photolithographique dans une couche de résine photosensible et sont conçus pour une production ultérieure de matrices de ceux-ci et pour une reproduction en masse mettant en oeuvre un moulage par injection ou une photopolymérisation. Ce procédé consiste à éclairer la couche de résine photosensible en utilisant un rayonnement polarisé chimiquement actif, qui porte des informations concernant la future microstructure spatiale de divers produits originaux à micro-reliefs, puis à reproduire la topologie spatiale produite dans la couche avant le développement de la couche exposée, en utilisant un rayonnement à nouveau polarisé, mais cette fois non chimiquement actif.
PCT/IL2001/001156 2000-12-12 2001-12-12 Procede photolithographique permettant de produire des disques, cartes et autres elements optiques originaux pourvus de micro-reliefs et dispositifs microminiaturises WO2002049009A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2002222484A AU2002222484A1 (en) 2000-12-12 2001-12-12 Photolithographic method including measurement of the latent image
AU2002222484A AU2002222484A8 (en) 2000-12-12 2001-12-12 Photolithographic method including measurement of the latent image

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US25453900P 2000-12-12 2000-12-12
US60/254,539 2000-12-12

Publications (2)

Publication Number Publication Date
WO2002049009A2 WO2002049009A2 (fr) 2002-06-20
WO2002049009A3 true WO2002049009A3 (fr) 2012-01-05

Family

ID=22964665

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IL2001/001156 WO2002049009A2 (fr) 2000-12-12 2001-12-12 Procede photolithographique permettant de produire des disques, cartes et autres elements optiques originaux pourvus de micro-reliefs et dispositifs microminiaturises

Country Status (2)

Country Link
AU (2) AU2002222484A8 (fr)
WO (1) WO2002049009A2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004047096A1 (fr) 2002-11-20 2004-06-03 Sony Corporation Procede pour produire une matrice utilisee pour la production d'un disque optique, et procede de production de disque optique
DE60336928D1 (de) * 2003-01-09 2011-06-09 Sony Corp Herstellungsprozess für einen originalen datenträger zur herstellung eines optischen datenträgers unger
WO2006045332A1 (fr) * 2004-10-27 2006-05-04 Singulus Mastering B.V. Processus de masterisation utilisant des materiaux a changement de phase
EP1965383A1 (fr) * 2007-03-02 2008-09-03 Singulus Mastering B.V. Mesure d'ordre de diffraction
CA2838842C (fr) 2011-06-09 2019-09-24 Case Western Reserve University Support de stockage d'information optique

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3920457A (en) * 1974-03-04 1975-11-18 Eastman Kodak Co Photographic leuco-dye compositions containing reductones as stabilizers
US4200463A (en) * 1975-12-19 1980-04-29 Motorola, Inc. Semiconductor device manufacture using photoresist protective coating
US4777111A (en) * 1985-06-03 1988-10-11 Fairmount Chemical Company, Inc. Photographic element with diazo contrast enhancement layer and method of producing image in underlying photoresist layer of element
US5283141A (en) * 1992-03-05 1994-02-01 National Semiconductor Photolithography control system and method using latent image measurements
US5376227A (en) * 1992-11-12 1994-12-27 Goldstar Electron Co., Ltd. Multilevel resist process
US5581531A (en) * 1989-08-02 1996-12-03 Hitachi, Ltd. Method of making optical disk master and an optical disk
US5674652A (en) * 1991-02-28 1997-10-07 University Of New Mexico Diffracted light from latent images in photoresist for exposure control
US5703692A (en) * 1995-08-03 1997-12-30 Bio-Rad Laboratories, Inc. Lens scatterometer system employing source light beam scanning means
US5968693A (en) * 1991-03-04 1999-10-19 Lucent Technologies Inc. Lithography tool adjustment utilizing latent imagery
US6025118A (en) * 1998-05-12 2000-02-15 Sony Corporation Glassmastering photoresist read after write method and system
US6051349A (en) * 1997-01-30 2000-04-18 Tokyo Electron Limited Apparatus for coating resist and developing the coated resist

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3920457A (en) * 1974-03-04 1975-11-18 Eastman Kodak Co Photographic leuco-dye compositions containing reductones as stabilizers
US4200463A (en) * 1975-12-19 1980-04-29 Motorola, Inc. Semiconductor device manufacture using photoresist protective coating
US4777111A (en) * 1985-06-03 1988-10-11 Fairmount Chemical Company, Inc. Photographic element with diazo contrast enhancement layer and method of producing image in underlying photoresist layer of element
US5581531A (en) * 1989-08-02 1996-12-03 Hitachi, Ltd. Method of making optical disk master and an optical disk
US5674652A (en) * 1991-02-28 1997-10-07 University Of New Mexico Diffracted light from latent images in photoresist for exposure control
US5968693A (en) * 1991-03-04 1999-10-19 Lucent Technologies Inc. Lithography tool adjustment utilizing latent imagery
US5283141A (en) * 1992-03-05 1994-02-01 National Semiconductor Photolithography control system and method using latent image measurements
US5376227A (en) * 1992-11-12 1994-12-27 Goldstar Electron Co., Ltd. Multilevel resist process
US5703692A (en) * 1995-08-03 1997-12-30 Bio-Rad Laboratories, Inc. Lens scatterometer system employing source light beam scanning means
US6051349A (en) * 1997-01-30 2000-04-18 Tokyo Electron Limited Apparatus for coating resist and developing the coated resist
US6025118A (en) * 1998-05-12 2000-02-15 Sony Corporation Glassmastering photoresist read after write method and system

Also Published As

Publication number Publication date
AU2002222484A1 (en) 2002-06-24
AU2002222484A8 (en) 2012-02-02
WO2002049009A2 (fr) 2002-06-20

Similar Documents

Publication Publication Date Title
US5807649A (en) Lithographic patterning method and mask set therefor with light field trim mask
TW357262B (en) Method for the measurement of aberration of optical projection system, a mask and a exposure device for optical project system
EP1162507A3 (fr) Méthode d'alignement, méthode d'inspection d'erreurs de recouvrement, et photomasque
WO2005114095A3 (fr) Appareils et procedes de mesure de recouvrements, de marques d'alignement et de dimensions critiques faisant appel a l'interferometrie optique
CN108292108A (zh) 计量目标、方法和设备、计算机程序和光刻系统
US7411651B2 (en) PSM alignment method and device
CA2207864A1 (fr) Photoresines ameliorees et methode de fabrication de plaques d'impression
WO2005005121A3 (fr) Procede de fabrication d'un moule pour produire une surface optique, procede de production de lentilles de contact et dispositif utilise selon ces procedes
JPS647618A (en) Method and apparatus for exposing semiconductor
WO2002049009A3 (fr) Procede photolithographique permettant de produire des disques, cartes et autres elements optiques originaux pourvus de micro-reliefs et dispositifs microminiaturises
JPH11327123A (ja) エアリアル像測定ツ―ルを用いた位相測定
WO2001098836A3 (fr) Procede de reduction des defauts apres developpement dans et autour des orifices formees dans le photoresist par une exposition non matricee
JPS6468926A (en) Measurement of image distortion in projection optical system
Erdmann et al. Simulation of optical lithography
EP1280006A3 (fr) Méthode pour la production d une plaque d impression lithographique
GB9515230D0 (en) Method of manufacturing a photo mask for manufacturing a semiconductor device
JP2005175383A5 (fr)
MY129503A (en) Method of forming mother for use in optical disc
KR960002243B1 (ko) 광조사로 레지스트 마스크 패턴을 형성하는 방법
Honda et al. What determines the ultimate resolution? The critical relationship between exposure tools and photoresists
JPS6473617A (en) Aligning method of projection system
KR950012588A (ko) 반도체 장치의 제조방법
Vollenbroek et al. Promote processing with JSR-7750 positive photoresist
Nölscher et al. Search for the optimum numerical aperture
JPH0365889B2 (fr)

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SI SK SL TJ TM TN TR TT TZ UA UG US UZ VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: "NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 69 (1) EPC (EPO FORM 1205A DATED 10/12/03)"

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP