JPS6473617A - Aligning method of projection system - Google Patents

Aligning method of projection system

Info

Publication number
JPS6473617A
JPS6473617A JP62230393A JP23039387A JPS6473617A JP S6473617 A JPS6473617 A JP S6473617A JP 62230393 A JP62230393 A JP 62230393A JP 23039387 A JP23039387 A JP 23039387A JP S6473617 A JPS6473617 A JP S6473617A
Authority
JP
Japan
Prior art keywords
pattern
light beam
substrate
passing
linearly polarized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62230393A
Other languages
Japanese (ja)
Inventor
Ensuke Ishibashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JFE Steel Corp
Original Assignee
Kawasaki Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kawasaki Steel Corp filed Critical Kawasaki Steel Corp
Priority to JP62230393A priority Critical patent/JPS6473617A/en
Publication of JPS6473617A publication Critical patent/JPS6473617A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To form an accurate pattern by passing a linearly polarized light beam through a reticle formed in a pattern of a magnetic film, further passing it through a device which can pass only the beam polarized in a specific direction, and then exposing it on a substrate. CONSTITUTION:An aligner 1 has a polarizing illumination system 2 to generate a linearly polarized light beam. Here, the system 2 passes the light beam radiated from an exposure illumination system 3 through a condensing lens 4 and then a polarizer 5 to obtain a linearly polarized light beam. Then, the beam passes a reticle 7 formed in a pattern on the surface of a magnetic film 6 on the surface and then a polarizer 8 provided as a device which can pass only the light beam polarized in a specific direction. Further, the beam is contracted in its pattern when passing a projection optical system 9, then projected on a substrate 11 mounted on a stage 10 to form a pattern on the substrate 11. Since the beam of the substrate 11 is not irradiated to a resist 12, it can be accurately patterned.
JP62230393A 1987-09-14 1987-09-14 Aligning method of projection system Pending JPS6473617A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62230393A JPS6473617A (en) 1987-09-14 1987-09-14 Aligning method of projection system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62230393A JPS6473617A (en) 1987-09-14 1987-09-14 Aligning method of projection system

Publications (1)

Publication Number Publication Date
JPS6473617A true JPS6473617A (en) 1989-03-17

Family

ID=16907173

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62230393A Pending JPS6473617A (en) 1987-09-14 1987-09-14 Aligning method of projection system

Country Status (1)

Country Link
JP (1) JPS6473617A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4950832A (en) * 1987-07-29 1990-08-21 Nikki Chemical Co., Ltd. Method for preparation of dialkylnaphthalenes and catalyst for the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4950832A (en) * 1987-07-29 1990-08-21 Nikki Chemical Co., Ltd. Method for preparation of dialkylnaphthalenes and catalyst for the same

Similar Documents

Publication Publication Date Title
US4952060A (en) Alignment method and a projection exposure apparatus using the same
KR970049048A (en) Exposure method for manufacturing semiconductor device and exposure device using same
JPS57142612A (en) Alignment optical system of projection type exposure device
EP0496891A4 (en) Method and device for optical exposure
JPS56110234A (en) Projection printing device
KR930001310A (en) Polarizing exposure apparatus and polarizing mask manufacturing method using a polarizer
US4493555A (en) High sensitivity focal sensor for electron beam and high resolution optical lithographic printers
JPS647618A (en) Method and apparatus for exposing semiconductor
US4498009A (en) Optical lithographic system having a dynamic coherent optical system
KR940000904B1 (en) Mask alignment system
JPS6468926A (en) Measurement of image distortion in projection optical system
JPS6473617A (en) Aligning method of projection system
AU2002222484A8 (en) Photolithographic method including measurement of the latent image
KR970004421B1 (en) Photolithography apparatus in semiconductor
JPS6489325A (en) Aligner
JPS5612729A (en) ?alignmening device for ic projection exposure equipment
JPS57200029A (en) Exposing device
KR960026075A (en) Wafer alignment method and device therefor by oblique illumination of alignment light in wafer stepper
JPS5768023A (en) Mask alignment device
JPS5612727A (en) Aligning device for ic projection exposure apparatus
JPS6216526A (en) Projection exposure apparatus
JPH06325994A (en) Pattern forming method, pattern forming device and mask
KR100605507B1 (en) Apparatus and Method for Evaluating Polarization of Light
JPH02309626A (en) Aligner
JPS6467914A (en) Exposure device