JPH02309626A - Aligner - Google Patents
AlignerInfo
- Publication number
- JPH02309626A JPH02309626A JP1132278A JP13227889A JPH02309626A JP H02309626 A JPH02309626 A JP H02309626A JP 1132278 A JP1132278 A JP 1132278A JP 13227889 A JP13227889 A JP 13227889A JP H02309626 A JPH02309626 A JP H02309626A
- Authority
- JP
- Japan
- Prior art keywords
- lens system
- resist film
- projection lens
- shutter
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 14
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052753 mercury Inorganic materials 0.000 abstract description 4
- 238000005286 illumination Methods 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
- G03F7/70891—Temperature
Abstract
Description
【発明の詳細な説明】
〔概 要〕
露光装置の光線の露光を制御するシャッタの配設位置の
改良に関し、
簡単且つ容易に行えるシャッタの配設位置の変更により
、露光光吸収による光学系のピント面の移動及び投影倍
率の変動が生じるのを防止することが可能となる露光装
置の提供を目的とし、光源から放射され、フライアイレ
ンズ及びコンデンサレンズを透過し、レチクルの透明部
を透過した光線を、投影レンズ系により縮小し、ステー
ジの上に搭載した半導体基板の表面に形成したレジスト
膜に照射する露光装置であって、前記光線の前記レジス
ト膜への照射を制御するシャッタを、前記投影レンズ系
と前記半導体基板の表面に形成した前記レジスト膜との
間に具備するよう構成する。[Detailed Description of the Invention] [Summary] Regarding the improvement of the placement position of the shutter that controls the exposure of the light beam of the exposure device, by simply and easily changing the placement position of the shutter, it is possible to improve the optical system by absorbing the exposure light. The purpose of this is to provide an exposure device that can prevent movement of the focus plane and fluctuations in projection magnification. An exposure apparatus that reduces a light beam by a projection lens system and irradiates a resist film formed on the surface of a semiconductor substrate mounted on a stage, the shutter controlling the irradiation of the light beam to the resist film. The projection lens system is configured to be provided between the projection lens system and the resist film formed on the surface of the semiconductor substrate.
本発明は、露光装置に係り、光線の露光を制御するシャ
ッタの配設位置の改良に関するものである。The present invention relates to an exposure apparatus, and relates to an improvement in the arrangement position of a shutter that controls exposure of light beams.
近年の線幅が0.5μm程度に微細化した電子デバイス
の製造工程におけるリソグラフィ一工程に、おいては、
電子回路パターンを形成する場合の露光装置の解像度及
び露光時の重ね合わせ精度に対する性能の向上が不可欠
となってきている。In the lithography process in the manufacturing process of electronic devices, where the line width has become finer in recent years to about 0.5 μm,
It has become essential to improve the performance of exposure apparatuses in terms of resolution and overlay accuracy during exposure when forming electronic circuit patterns.
このように微細化した線幅の電子回路パターンの露光に
対してはピント面の許容誤差は±0.3μm以下であり
、投影倍率を±3 ppm以下に安定させることが必要
である。For exposure of electronic circuit patterns with such fine line widths, the tolerance of the focus plane is ±0.3 μm or less, and it is necessary to stabilize the projection magnification at ±3 ppm or less.
以上のような状況から、微細化した電子デバイスのパタ
ーンの露光を行うことが可能な露光装置が要望されてい
る。Under the above circumstances, there is a demand for an exposure apparatus that can expose patterns of miniaturized electronic devices.
従来の露光装置を第2図により詳細に説明する。 A conventional exposure apparatus will be explained in detail with reference to FIG.
従来の露光装置の概略構造は第2図に示すように、光源
、例えば水銀ランプ1から放射された光線1aはフライ
アイレンズ2を透過し、コンデンサレンズ3で照明光線
となり、レチクル4の透明部を透過した光線1aは投影
レンズ系5により縮小されて、ステージ7に搭載されて
いる半導体基板8の表面に形成したレジスト膜9の、通
常は15重層角の領域に照射される。このような露光装
置においては、光線1aを遮断し、露光時に光線1aを
透過させるシャッタ16はフライアイレンズ2とコンデ
ンサレンズ3の間に設けられている。The schematic structure of a conventional exposure apparatus is shown in FIG. 2. A light beam 1a emitted from a light source, for example, a mercury lamp 1, passes through a fly's eye lens 2, becomes an illumination beam at a condenser lens 3, and is illuminated by a transparent portion of a reticle 4. The light beam 1a that has passed through is reduced by the projection lens system 5 and irradiated onto a region of a resist film 9 formed on the surface of a semiconductor substrate 8 mounted on a stage 7, which is normally 15 times thicker. In such an exposure apparatus, a shutter 16 is provided between the fly's eye lens 2 and the condenser lens 3 to block the light beam 1a and to transmit the light beam 1a during exposure.
このような露光装置において、光学系の開口数(NA)
がさほど大きくない場合には、ピント面の焦点深度は±
2μmであり、投影倍率は重ね合わせ精度の製造許容値
±0.30μmの範囲内にはいっており、電子デバイス
の製造工程においては問題がなかった。In such exposure equipment, the numerical aperture (NA) of the optical system
If is not very large, the depth of focus at the focal plane is ±
The projection magnification was within the manufacturing tolerance of ±0.30 μm for overlay accuracy, and there were no problems in the manufacturing process of electronic devices.
しかしながら、光源の波長が短波長になり、光学系の開
口度が大きくなったので高解像力を有するようになり、
高精度の位置合わせを行うことができるようになった最
近の露光装置においては、その高度の性能を充分に発揮
させるためには、上記のピント面の移動と投影倍率の変
動との二点を無視することが出来なくなってきている。However, as the wavelength of the light source became shorter and the aperture of the optical system became larger, it became possible to have high resolution.
In recent exposure equipment that has become capable of high-precision positioning, in order to fully demonstrate its advanced performance, the two points mentioned above, movement of the focal plane and fluctuation of projection magnification, must be maintained. It has become impossible to ignore it.
以上説明した従来の露光装置においては、シャッタがフ
ライアイレンズとコンデンサレンズとの間に設けられて
いるので、水銀ランプから放射された光線は非露光時に
はフライアイレンズを透過してシャッタによって遮られ
ており、露光時にシャッタが開かれている間のみ光線が
コンデンサレンズ、レチクル、投影レンズ系を透過して
ステージ上の半導体基板の表面に形成したレンズ(・膜
に照射される。In the conventional exposure apparatus described above, the shutter is provided between the fly-eye lens and the condenser lens, so the light rays emitted from the mercury lamp pass through the fly-eye lens during non-exposure and are blocked by the shutter. Only while the shutter is open during exposure, the light beam passes through the condenser lens, reticle, and projection lens system and is irradiated onto the lens (film) formed on the surface of the semiconductor substrate on the stage.
このように、投影レンズ系には常時光線が透過していな
いために投影レンズ系の露光光吸収量が時間的に変動し
ており、それに伴って投影レンズ系の各要素に露光光吸
収による屈折率の変化及び光線の熱による膨張収縮が起
きるので、ピント面の移動及び投影倍率の変動が生じる
という問題点があった。In this way, since light does not pass through the projection lens system at all times, the amount of exposure light absorbed by the projection lens system fluctuates over time. There is a problem in that the focal plane shifts and the projection magnification changes due to changes in the ratio and expansion and contraction of the light beam due to heat.
本発明は以上のような状況からFJ 栄且つ容易に行え
るシャッタの配設位置の変更により、露光光吸収による
光学系のピント面の移動及び投影倍率の変動が生じるの
を防止することが可能となる露光装置の提供を目的とし
たものである。The present invention was developed based on the above-mentioned circumstances, and it is possible to prevent movement of the focal plane of the optical system and fluctuation of projection magnification due to absorption of exposure light by changing the placement position of the shutter, which can be done easily and easily. The purpose of the present invention is to provide an exposure apparatus with the following characteristics.
本発明の露光装置は、光源から放射され、フライアイレ
ンズ及びコンデンサレンズを透過し、レチクルの透明部
を透過した光線を、投影レンズ系により縮小し、ステー
ジの上に搭載した半導体基板の表面に形成したレジスト
膜に照射する露光装置であって、この光線のこのレジス
ト膜・\の照射を制御するシャッタを、投影レンズ系と
半導体基板の表面に形成したレジスト膜との間に具備す
るよう構成する。The exposure apparatus of the present invention reduces light beams emitted from a light source, passes through a fly-eye lens and a condenser lens, and passes through a transparent part of a reticle using a projection lens system, and projects the light beams onto the surface of a semiconductor substrate mounted on a stage. An exposure device for irradiating the formed resist film, and configured to include a shutter for controlling the irradiation of the resist film with the light beam between the projection lens system and the resist film formed on the surface of the semiconductor substrate. do.
即ち本発明においては、シャッタを投影レンズ系とステ
ージ上の半導体基板の表面に形成したレジスト膜との間
に配設するので、投影レンズ系には光線が常時透過して
おり、投影レンズ系を熱的平衡状態に保つことができる
ので、シャッタの開閉にかかわらずピント面の移動及び
投影倍率の変動を最小に抑えることが可能となる。That is, in the present invention, since the shutter is disposed between the projection lens system and the resist film formed on the surface of the semiconductor substrate on the stage, light rays are constantly transmitted through the projection lens system. Since a thermal equilibrium state can be maintained, movement of the focal plane and fluctuations in projection magnification can be minimized regardless of whether the shutter is opened or closed.
以下本発明による一実施例の露光装置を第1図により詳
細に説明する。An exposure apparatus according to an embodiment of the present invention will be explained in detail below with reference to FIG.
本実施例の露光装置の概略構造は第1図に示すようなも
のであり、光線1aを遮断するシャッタ6の配設位置が
投影レンズ系5と、ステージ7上の半導体基板8の表面
に形成したレジスト膜9との間であること以外は従来の
露光装置と同じである。The schematic structure of the exposure apparatus of this embodiment is as shown in FIG. The exposure apparatus is the same as the conventional exposure apparatus except that it is between the exposed resist film 9 and the exposed resist film 9.
このような露光装置においては、光源としては波長が4
36nmのg !fIAを放射する水銀ランプ1を用い
、光学系の開口数が0.45で、レジスト膜9上の露光
領域が15龍角で、通常の投影レンズ系5への露光量が
lOO〜200 m J / cutの場合、従来の露
光装置において、ピント面の変動Δfが±1〜2μmで
あり、投影倍率の変動ΔMが±5〜loppmであった
ものが、本実施例においてはΔrを±0.3μm、投影
倍率の変動ΔMを±3ppm以下に低減することが可能
である。In such an exposure apparatus, the light source has a wavelength of 4.
36nm g! A mercury lamp 1 that emits fIA is used, the numerical aperture of the optical system is 0.45, the exposure area on the resist film 9 is 15 angles, and the exposure amount to the normal projection lens system 5 is lOO~200 mJ. / cut, in the conventional exposure apparatus, the variation Δf of the focus plane was ±1 to 2 μm and the variation ΔM of the projection magnification was ±5 to loppm, but in this embodiment, the variation Δr is ±0. 3 μm, and it is possible to reduce the projection magnification variation ΔM to ±3 ppm or less.
新作の露光装置においては、シャッタ6を投影レンズ系
5の最下面に配設し、投影レンズ系5とシャック6とを
一体化させて内蔵することが可能であり、現用の露光装
置においてては、投影レンズ系5とステージ7上の半導
体基板8の表面に形成したレジスト膜9との間隔が約1
0 amであるから、既設の露光装置の投影レンズ系5
に対してもシャッタ6を追加して設けることも可能であ
る。In the new exposure equipment, the shutter 6 is arranged at the bottom surface of the projection lens system 5, and the projection lens system 5 and the shack 6 can be integrated and built in. , the distance between the projection lens system 5 and the resist film 9 formed on the surface of the semiconductor substrate 8 on the stage 7 is about 1
0 am, the projection lens system 5 of the existing exposure equipment
It is also possible to additionally provide a shutter 6 for the same.
以上の説明から明らかなように本発明によれば、シャッ
タの配設位置を変更し、光線を常時投影レンズ系に入射
させて透過させておくことにより、投影レンズ系を熱的
平衡状態に保持することが可能となる利点があり、著し
い経済的及び、信頼性向上の効果が期待できる露光装置
の提供が可能である。As is clear from the above description, according to the present invention, the projection lens system is maintained in a thermal equilibrium state by changing the arrangement position of the shutter and allowing the light beam to enter the projection lens system at all times and pass through it. Therefore, it is possible to provide an exposure apparatus that can be expected to have significant economic and reliability effects.
第1図は本発明による一実施例の露光装置の概略構造を
示す側面図、
第2図は従来の露光装置の概略構造を示す側面図、
である。
図において、
lは水i艮うンプ、
1aは光線、
2はフライアイランプ、
3はコンデンサレンズ、
4はレチクル、
5は投影レンズ系、
6はシャッタ、
7はステージ、
8は半導体基板、
ミ
」
シ
本発明による一実施例の露光装置の概略構造を示す側面
図第1図FIG. 1 is a side view showing a schematic structure of an exposure apparatus according to an embodiment of the present invention, and FIG. 2 is a side view showing a schematic structure of a conventional exposure apparatus. In the figure, l is a water pump, 1a is a light beam, 2 is a fly-eye lamp, 3 is a condenser lens, 4 is a reticle, 5 is a projection lens system, 6 is a shutter, 7 is a stage, 8 is a semiconductor substrate, FIG. 1 is a side view showing a schematic structure of an exposure apparatus according to an embodiment of the present invention.
Claims (1)
コンデンサレンズ(3)を透過し、レチクル(4)の透
明部を透過した光線(1a)を、投影レンズ系(5)に
より縮小し、ステージ(7)の上に搭載した半導体基板
(8)の表面に形成したレジスト膜(9)に照射する露
光装置であって、 前記光線(1a)の前記レジスト膜(9)への照射を制
御するシャッタ(6)を、前記投影レンズ系(5)と前
記半導体基板(8)の表面に形成した前記レジスト膜(
9)との間に具備することを特徴とする露光装置。[Claims] A projection lens system (1a) emits a light beam (1a) emitted from a light source (1), passes through a fly-eye lens (2) and a condenser lens (3), and passes through a transparent part of a reticle (4). 5) and irradiates the resist film (9) formed on the surface of the semiconductor substrate (8) mounted on the stage (7), the exposure apparatus comprising: ) is provided with a shutter (6) for controlling irradiation onto the projection lens system (5) and the resist film (8) formed on the surface of the semiconductor substrate (8).
9) An exposure apparatus characterized by being provided between.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1132278A JPH02309626A (en) | 1989-05-24 | 1989-05-24 | Aligner |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1132278A JPH02309626A (en) | 1989-05-24 | 1989-05-24 | Aligner |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02309626A true JPH02309626A (en) | 1990-12-25 |
Family
ID=15077545
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1132278A Pending JPH02309626A (en) | 1989-05-24 | 1989-05-24 | Aligner |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02309626A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5629805A (en) * | 1993-11-15 | 1997-05-13 | Nec Corporation | Aligner equipped with annular illumination system for annular illumination light with large illuminance |
EP1081553A2 (en) * | 1999-09-01 | 2001-03-07 | Canon Kabushiki Kaisha | Exposure method and scanning exposure apparatus |
-
1989
- 1989-05-24 JP JP1132278A patent/JPH02309626A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5629805A (en) * | 1993-11-15 | 1997-05-13 | Nec Corporation | Aligner equipped with annular illumination system for annular illumination light with large illuminance |
EP1081553A2 (en) * | 1999-09-01 | 2001-03-07 | Canon Kabushiki Kaisha | Exposure method and scanning exposure apparatus |
EP1081553A3 (en) * | 1999-09-01 | 2004-08-11 | Canon Kabushiki Kaisha | Exposure method and scanning exposure apparatus |
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