WO2002043123A1 - Dispositif et procede d'alignement et procede de fabrication de dispositif - Google Patents
Dispositif et procede d'alignement et procede de fabrication de dispositif Download PDFInfo
- Publication number
- WO2002043123A1 WO2002043123A1 PCT/JP2001/010184 JP0110184W WO0243123A1 WO 2002043123 A1 WO2002043123 A1 WO 2002043123A1 JP 0110184 W JP0110184 W JP 0110184W WO 0243123 A1 WO0243123 A1 WO 0243123A1
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- WIPO (PCT)
- Prior art keywords
- pattern surface
- detection
- thickness
- light
- pattern
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/7026—Focusing
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
- G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
Definitions
- the present invention relates to an exposure apparatus, an exposure method, and a device manufacturing method. More specifically, the present invention relates to an exposure apparatus, an exposure method, and an exposure method used in the production of semiconductor elements, liquid crystal display elements, etc. The present invention relates to a device manufacturing method to be used. Background art
- the exposure wavelength has been shifted to shorter wavelengths in order to realize high resolution in response to miniaturization of integrated circuits.
- the main wavelength is 2488 nm of KrF excimer laser, but the shorter wavelength of 19.3 nm of ArF excimer laser is entering the practical stage.
- phenomena such as exposure light being absorbed by substances (mainly organic substances) in the air, and organic substances activated by the exposure light adhering to a lens or the like and causing deterioration in transmittance are caused. Occur. For this reason, it is said that it is effective to fill the space in the optical path with air or other gas from which organic substances have been removed in order to remove organic substances from the optical path.
- a pattern surface on which a pattern is formed on a mask or a reticle (hereinafter, collectively referred to as a “reticle”)
- the transmittance of the part decreases, and When the contaminants are transferred onto the wafer, they cause a pattern transfer error. Therefore, it is common practice to cover the pattern surface of the reticle with a film-shaped member called a pellicle to prevent foreign matter such as dust from adhering to the pattern surface and preventing foreign matter from entering the depth of focus. .
- a r F excimer laser from a light source that emits light belonging to the vacuum ultraviolet region of the short wavelength for example, the output wavelength 1 5 7 nm of F 2 laser and, development or suggestion of a projection exposure apparatus has been made to use the a r 2 laser of output wavelength 1 2 6 nm.
- these luminous fluxes in a wavelength range called vacuum ultraviolet have poor transmittance of optical glass, and usable lenses and reticle materials are made of fluoride crystals such as fluorite, magnesium fluoride, and lithium fluoride. Limited.
- these light fluxes are also extremely absorbed by, for example, oxygen, water vapor, and general organic substances (hereinafter referred to as “absorbing gas”).
- the conventional pellicle is formed of a thin film containing an organic substance such as nitrocellulose as a main component. Therefore, when vacuum ultraviolet light is used as the exposure light, the pellicle itself absorbs the exposure light and removes the light from the pellicle. High possibility that gas will cause reduction in exposure light transmittance L
- a relatively thick film made of the above-mentioned fluoride crystal or fluorine-doped quartz having good vacuum ultraviolet light transmittance for example, (Thickness of about 300 to 800 or more) Thick pellicle (hard pellicle) made of a plate member may be adopted.
- Thick pellicle hard pellicle
- a first object of the present invention is to provide a high-precision exposure without being affected by a difference in thickness of a protective member (pellicle) for protecting a pattern surface of a mask.
- a second object of the present invention is to provide an exposure method capable of performing high-precision exposure without being affected by a difference in thickness of a protective member (pericle) for protecting a pattern surface of a mask. Is to do.
- a third object of the present invention is to provide a device manufacturing method capable of improving the yield of highly integrated microdevices and improving the productivity. Disclosure of the invention
- an exposure apparatus for irradiating a mask with an energy beam and transferring a pattern formed on the mask onto a substrate comprising: 9 is a first exposure apparatus including a detection device that detects the thickness of a light-transmitting protective member that protects a surface of the light source.
- the detection device for detecting the thickness of the light-transmitting protection member for protecting the pattern surface of the mask since the detection device for detecting the thickness of the light-transmitting protection member for protecting the pattern surface of the mask is provided, the pattern corresponding to the thickness of the protection member detected by the detection device is provided. Exposure can be performed in consideration of the image formation state of the image or the variation thereof. Accordingly, high-precision exposure can be performed without being affected by the difference in the thickness of the protective member (pellicle) for protecting the pattern surface of the mask.
- the detection device when the light-transmitting protective member is formed of a transparent plate made of a parallel plate, the detection device includes: An irradiation system for irradiating a detection light beam from a direction inclined at a predetermined angle with respect to the reflection surface; first and second reflection light beams from a surface of the transparent plate facing the pattern surface and a surface opposite to the pattern surface. And a calculation device for calculating the thickness of the transparent plate based on the detection signal output from the first photodetector. It can be.
- the opposite surface is an incident surface on which the detection light beam enters the transparent plate, and a surface opposite to the pattern surface is an emission surface from which the detection light beam exits the transparent plate.
- the detection device further includes a second photodetector that receives a third reflected light beam from the pattern surface and outputs a detection signal
- the arithmetic device includes the first light detection device.
- the position of the pattern surface in the normal direction can also be calculated based on the detection signal output from the detector and the detection signal output from the second photodetector.
- the arithmetic unit includes a first calculator that calculates the thickness of the transparent plate based on a detection signal output from the first photodetector, and a first calculator that calculates the thickness of the transparent plate.
- a second calculator for calculating a position of the pattern surface in a normal direction based on the thickness of the transparent plate thus obtained and a detection signal output from the second photodetector. Can be.
- the detection device has first and second photodetectors, and the arithmetic device is configured to determine a normal direction of a pattern surface based on output signals from these photodetectors.
- the detection device further includes a calibration device for calibrating the second photodetector based on a detection signal output from the first photodetector. It can be.
- the calibration device can calibrate the second photodetector by shifting the optical axis of the light beam reflected from the pattern surface.
- the calibration device includes a parallel flat plate that is disposed on an optical path of the reflected light beam from the pattern surface to the second photodetector and that can change a tilt of the reflected light beam with respect to an optical axis. It can be.
- the light-transmitting protective member is formed by a transparent plate made of a parallel plate, and the detection device includes the first photodetector and the arithmetic device.
- a projection optical system which projects the energy beam emitted from the mask onto the substrate, and is arranged so that an optical axis direction thereof is the normal direction;
- a correction device for correcting at least one of the positional relationship between the mask and the substrate and the optical characteristics of the projection optical system based on the thickness of the transparent plate.
- the irradiation system irradiates each of the detection light beams to a plurality of detection points in an area of the pattern surface corresponding to an exposure area of the projection optical system illuminated by the energy beam.
- a plurality of photodetectors are provided corresponding to the respective detection points, and the arithmetic device calculates a thickness distribution of the transparent plate based on detection signals from the plurality of first photodetectors.
- the correction device may adjust an inclination of at least one of the mask and the substrate with respect to a plane orthogonal to the optical axis direction of the projection optical system.
- an exposure apparatus which irradiates a mask with an energy beam and transfers a pattern formed on the mask onto a substrate, wherein the pattern on the mask has the pattern formed thereon.
- An irradiation system for irradiating the pattern surface with a detection light beam at an incident angle ⁇ through a light-transmitting transparent plate having a predetermined thickness for protecting the surface, and receiving the detection light beam reflected from the pattern surface;
- a position detection system comprising: a photodetector that outputs the detection signal and a calculator that calculates a position of the pattern surface in a direction normal to the pattern surface based on an output of the photodetector;
- a projection optical system for projecting the energy beam emitted from the mask onto the substrate, and having the normal direction as an optical axis direction.
- the emission angle in the transparent plate is 8, the maximum angle of incidence of the energy beam with respect to the transparent plate determined by the numerical aperture and the projection magnification of the projection optical system is ⁇ ', the emission angle of the energy beam in the transparent plate Is / 8 ', the incident angle ⁇ is
- the second exposure apparatus is set so as to satisfy the following.
- the energy beam is an F 2 laser beam having a wavelength of 1 5 7 nm
- the incident The angle is preferably set in the range of 30 ° to 50 °, more preferably in the range of 35 ° to 40 °.
- the detection light it is considered Rukoto using light of various wavelengths, for example Enerugibi one ⁇ it is in the F 2 laser beam having a wavelength of 1 5 7 nm, the detecting light beam
- the detection light beam When the incident angle a is set in the range of 30 ° to 50 °, the detection light beam may be red light belonging to a wavelength of 600 nm to 800 nm, and the transparent plate may be fluorine-doped quartz. .
- the projection optical system may be configured based on a thickness t of the transparent plate.
- a correction device for correcting the optical characteristics of the system may be further provided.
- the thickness t may be given by an external input, but may further include a detecting device for detecting the thickness t.
- a detecting device for detecting the thickness t.
- the detection device for example, a device having the above-described first photodetector (and second photodetector) and an arithmetic device can be used.
- an exposure apparatus for irradiating a mask with an energy beam and transferring a pattern formed on the mask onto a substrate, wherein the pattern of the mask is formed.
- An irradiation system for irradiating a detection light beam from a direction inclined at a predetermined angle with respect to the pattern surface through a light-transmitting transparent plate having a predetermined thickness for protecting the butter surface; and a light beam reflected from the pattern surface
- a calibration device for calibrating the position detection device based on the thickness of the transparent plate.
- the position detection device is calibrated by the calibration device based on the thickness of the transparent plate that protects the pattern surface of the mask. Then, when the detection light beam is irradiated from the irradiation system through the transparent plate onto the pattern surface of the mask, the reflected light beam is received by the position detection device subjected to the above-described calibration, and the reflected light beam is irradiated on the pattern surface.
- the position in the normal direction is accurately detected without being affected by the thickness of the transparent plate, that is, regardless of the presence or absence of the transparent plate. Therefore, the positional relationship (including the optical positional relationship) between the pattern surface of the mask and the surface to be exposed of the substrate is set to a desired relationship, and high-precision exposure can be performed.
- an exposure apparatus comprising: exposing a substrate with an energy beam through a mask; and exposing a pattern image formed on the mask on the substrate.
- a correcting step of correcting an image forming state of the pattern image comprising: exposing a substrate with an energy beam through a mask; and exposing a pattern image formed on the mask on the substrate.
- the thickness of the light-transmitting protective member that protects the pattern surface of the mask is detected, and the imaging state of the pattern image formed on the substrate is corrected based on the thickness of the protective member. Therefore, it is possible to perform high-precision exposure in consideration of the image forming state of the pattern image according to the thickness of the protective member or the variation thereof.
- the detecting step includes a direction inclined at a predetermined angle with respect to a normal to the pattern surface via the transparent plate.
- a third reflected light beam from the pattern surface is further received, and in the calculating step, based on a light receiving result of the first, second, and third reflected light beams, The position of the pattern surface in the normal direction may also be calculated.
- the calculation of the position of the pattern surface in the normal direction includes a first calculation step of calculating the thickness of the transparent plate based on a result of receiving the first and second reflected light fluxes, A second calculation step of calculating a position of the pattern surface in a normal direction based on the calculated thickness of the transparent plate and a result of receiving the third reflected light beam may be included.
- an exposure method for irradiating a mask with an energy beam and transferring a pattern formed on the mask onto a substrate via a projection optical system Irradiating the pattern surface with a detection light beam at an incident angle ⁇ via a light-transmitting transparent plate having a predetermined thickness for protecting the pattern surface of the mask on which the pattern is formed; Receiving a reflected light beam of the detected light beam from the pattern surface, and calculating a position of the pattern surface with respect to an optical axis direction of the projection optical system which is a normal direction of the pattern surface based on the received light beam.
- the angle of incidence of the energy beam on the transparent plate determined by the numerical aperture and projection magnification of the projection optical system, is ⁇ ′, When the exit angle in the transparent plate is set to / 3 ', the incident angle ⁇ is
- a detection light beam is applied to the pattern surface at an incident angle a via a light-transmitting transparent plate of a predetermined thickness that protects the pattern surface of the mask, and the detection light beam is reflected from the pattern surface.
- the position of the pattern surface in the direction of the optical axis of the projection optical system, which is the direction of the normal to the transparent plate, is calculated based on the result of the light reception.
- the incident angle a of the detection light beam is the exit angle of the detection light beam in the transparent plate.3)
- the maximum incident angle of the energy beam to the transparent plate determined by the numerical aperture of the projection optical system and the projection magnification.
- the angle is a 'and the exit angle of the energy beam in the transparent plate is ⁇ ', it is set so as to satisfy tan / SZ tanatan iS '/ tana'. Regardless of the difference, the difference between the focus position of the energy beam and the difference between the detection positions of the detection light beam are matched. Therefore, based on the reflected light flux, it is possible to accurately detect the position of the pattern surface of the mask in the optical axis direction or the amount of differential difference without being affected by the transparent plate. Accordingly, by setting the optical positional relationship between the pattern surface of the mask and the exposed surface of the substrate to a desired relationship, it becomes possible to perform highly accurate exposure without defocus.
- a mask is irradiated with an energy beam having a wavelength of 157 nm, and a pattern formed on the mask is formed on a substrate via a projection optical system.
- An exposure method for transferring wherein a pattern surface of the mask on which the pattern is formed is irradiated with a detection light beam at an incident angle in a range of 30 ° to 50 °; and Receiving a reflected light beam from the pattern surface, and calculating a position of the pattern surface in the optical axis direction of the projection optical system based on a result of the light reception.
- the reflected light beam from the pattern surface of the detection light beam irradiated at an incident angle within the range of 30 ° to 50 ° with respect to the pattern surface of the mask is received, and projected based on the light receiving result.
- the position of the pattern surface in the optical axis direction of the optical system is calculated.
- the detection light beam is applied to the pattern surface at an incident angle in the range of 30 ° to 50 °, so that the transparent plate is used.
- the detection error of the position of the pattern surface and the shift of the focal position of the energy beam by the transparent plate are almost equal.
- the detection error of the position of the pattern surface has almost no influence on the exposure accuracy, high-precision exposure can be realized even when performing the same control as when a transparent plate is not provided near the mask pattern. It is possible.
- the incident angle is in the range of 35 ° to 40 °.
- an exposure method for irradiating a mask with an energy beam and transferring a pattern formed on the mask onto a substrate, wherein the pattern of the mask is formed An irradiation step of irradiating a detection light beam from a direction inclined at a predetermined angle with respect to the pattern surface through a light-transmitting transparent plate of a predetermined thickness for protecting the pattern surface; A position detection / correction step of receiving a reflected light beam to detect a position of the pattern surface in a normal direction and correcting a position of the pattern surface in a normal direction based on a thickness of the transparent plate;
- the position detection / correction step includes the step of detecting the thickness of the transparent plate based on the detected thickness of the transparent plate. Is corrected in the normal direction.
- a position of the pattern surface in a normal direction is detected using a position detection device, and the position of the transparent plate is corrected for correction of the position.
- Calibration of the position detecting device may be performed based on the thickness.
- high-precision exposure can be performed by performing exposure using any of the first to third exposure apparatuses of the present invention. It can be manufactured well and its productivity can be improved.
- a pattern can be accurately formed on a substrate by using any one of the first to fourth exposure methods of the present invention, whereby a highly integrated microdevice can be formed. It can be manufactured with a good yield and its productivity can be improved. Therefore, from still another viewpoint of the present invention, a device manufacturing method using any of the first to third exposure apparatuses of the present invention, or a device manufacturing method using any of the first to fourth exposure methods of the present invention is used. It can be said that this is a device manufacturing method.
- FIG. 1 is a view schematically showing a configuration of an exposure apparatus according to the first embodiment of the present invention.
- FIG. 2 is a diagram schematically showing the reticle of FIG. 1 and a reticle AF system.
- FIG. 3 is a diagram for explaining the configuration of the reticle AF system.
- FIG. 4 is a diagram for explaining focus alignment according to the first embodiment.
- FIG. 5 is a diagram schematically showing a configuration of a reticle AF system according to a second embodiment of the present invention.
- 6A to 6C are diagrams for explaining focus alignment according to the second embodiment.
- Figure 7 shows that the incident angle is 0! 7 is a graph showing a relationship between the focal position shift Z.
- FIG. 8 is a flowchart for explaining an embodiment of the device manufacturing method according to the present invention.
- FIG. 9 is a flowchart showing details of step 204 in FIG. BEST MODE FOR CARRYING OUT THE INVENTION
- FIG. 1 schematically shows a configuration of an exposure apparatus 100 according to the first embodiment.
- the exposure apparatus 100 irradiates a reticle R as a mask with exposure illumination light EL as an energy beam in a vacuum ultraviolet region, and scans the reticle R and a wafer W as a substrate in a predetermined scanning direction (
- the pattern of the reticle R is transferred onto the wafer W via the projection optical system PL by synchronously moving in the direction of the ⁇ axis which is the horizontal direction in the plane of the paper in FIG. 1).
- the device the so-called scanning stepper.
- the exposure apparatus 100 includes a light source and an illumination unit ILU, and is used as an illumination system for illuminating the reticle R by exposure illumination light (hereinafter, referred to as “exposure light”) EL, and as a mask stage for holding the reticle R.
- Exposure light exposure illumination light
- Reticle stage RS a projection optical system PL that projects the exposure light EL emitted from the reticle R onto the wafer W
- a wafer stage WST as a substrate stage that holds the wafer W
- a control system therefor. I have.
- the light source wherein the wavelength of about 1 2 0 (1 171 ⁇ about 1 8 0 nm light source emitting light belonging to the vacuum ultraviolet region of, for example, the output wavelength 1 5 7 nm of fluorine laser (F 2 laser) are used
- the light source is connected to one end of an illumination system housing 2 constituting an illumination unit ILU via a light transmission optical system (not shown) partially including an optical axis adjustment optical system called a beam matching unit.
- the light source is actually a low-clean service room separate from the clean room where the exposure unit including the illumination unit ILU and the projection optical system PL is installed, or a utility under the clean room floor. is installed in the space.
- the output wavelength 1 4 6 nm krypton dimer laser such as the output wavelength 1 2 6 nm argon dimer one laser (a r 2 laser) May be used in a vacuum ultraviolet light source, or the output wavelength 1 9 3 nm of A r F excimer laser, it may be used r F excimer one The like of the output wavelength 2 4 8 eta.
- the illumination unit ILU includes an illumination system housing 2 for isolating the interior from the outside, and an optical integrator arranged inside the illumination system housing 2 in a predetermined positional relationship.
- the illumination optical system includes an ND filter, a reticle blind, and a dichroic mirror (all not shown).
- This illumination optical system is disclosed, for example, in Japanese Patent Application Laid-Open No. H10-114243, Japanese Patent Application Laid-Open No. H6-344971, and U.S. Patent Nos. 5,534,9 and 9 corresponding thereto. It has the same configuration as that disclosed in No. 70 or the like. In this embodiment, a fly-eye lens is used for the optical integration.
- the present invention is not limited to this, and a rod integrator (internal reflection type integrator) or a diffractive optical element can be used.
- a rod integrator internal reflection type integrator
- a diffractive optical element can be used.
- a slit-shaped illumination area (a slit-shaped area elongated in the X-axis direction defined by the reticle blind) on the reticle R on which a circuit pattern or the like is formed is substantially exposed to the exposure light EL. Illuminate with uniform illuminance.
- a gas such as oxygen, water vapor, a hydrocarbon-based gas, or an organic substance having a strong absorption characteristic to light in such a wavelength band is used from the optical path.
- a gas such as oxygen, water vapor, a hydrocarbon-based gas, or an organic substance having a strong absorption characteristic to light in such a wavelength band is used from the optical path.
- a specific gas having a characteristic of little absorption of light in the vacuum ultraviolet region for example, nitrogen and a rare gas such as helium, argon, neon, krypton, or the like in the illumination system housing 2 is used.
- low-absorbing gas J As a result, the concentration of the absorbing gas in the illumination system housing 2 is less than several ppm.
- the light path inside the light source and the light transmission optical system is also filled with the low-absorbent gas similarly to the illumination system housing 2.
- the reticle stage R ST holds the reticle R and is disposed in the reticle chamber 15.
- the reticle chamber 15 is covered with a partition 18 that is tightly joined to the illumination system housing 2 and the lens barrel of the projection optical system PL, and the gas inside is isolated from the outside.
- the partition wall 18 of the reticle chamber 15 is made of a material with low degassing such as stainless steel (SUS). .
- a rectangular opening slightly smaller than the reticle R is formed in the ceiling of the partition wall 18 of the reticle chamber 15, and the internal space of the illumination system housing 2 and the reticle R to be exposed are arranged in this opening.
- the transmission window 12 is arranged so as to separate the internal space of the reticle chamber 15 from the reticle chamber 15.
- This transmission window 1 2 Since it is arranged on the optical path of the exposure light EL irradiated to the reticle R, it is formed of a crystalline material such as fluorite having high transparency to the vacuum ultraviolet light as the exposure light EL.
- the reticle stage RST drives the reticle R linearly with a large stroke in the Y-axis direction on a reticle base platen (not shown), and also minutely drives in the X-axis direction and 0z direction (rotation direction around the Z-axis). Is possible.
- the reticle stage RST is a reticle scanning stage 1 driven by a predetermined stroke in the Y-axis direction by a reticle driving system 49 including a linear motor on a reticle base platen (not shown). 4A, and a reticle holder 14B mounted on the reticle scanning stage 14A and holding the reticle R by suction.
- the reticle holder 14B is configured to be capable of minute drive (including rotation) in the XY plane by a reticle drive system 49.
- a low-absorbent gas such as helium gas (or nitrogen gas), is constantly flowing inside the reticle chamber 15. This is because, in an exposure apparatus that uses a vacuum ultraviolet exposure wavelength, it is necessary to replace the vicinity of the reticle R with a low absorption gas in order to avoid absorption of exposure light by an absorption gas such as oxygen. .
- the concentration of the absorptive gas is less than several Ppm.
- one end of an air supply pipe 16 and one end of an exhaust pipe 17 are connected to the partition wall 18 of the reticle chamber 15, respectively.
- the other end of the supply line 16 and the other end of the exhaust line 17 are respectively connected to a helium gas supply device (not shown).
- high-purity helium gas is constantly supplied from the helium gas supply device via the air supply line 16, and the gas inside the reticle chamber 15 is returned to the helium gas supply device via the exhaust line 17. In this way, helium gas is being recycled.
- the helium gas supply device has a built-in gas purification device.
- this gas purification device By the action of this gas purification device, helium gas is circulated for a long time through a circulation path including the helium gas supply device and the inside of the reticle chamber 15. use Even so, the concentration of absorbing gas (oxygen, water vapor, organic matter, etc.) other than helium gas in the reticle chamber 15 can be maintained at a concentration of several ppm or less.
- a sensor such as a pressure sensor or an absorptive gas concentration sensor is provided in the reticle chamber 15. The stop may be appropriately controlled.
- a light transmitting window 71 is provided on the side wall on the Y side of the partition wall 18 of the reticle chamber 15. Similarly, although not shown, a light-transmitting window is also provided on the side wall on the X side of the partition wall 18 (on the back side of the paper in FIG. 1). These light-transmitting windows are configured by attaching a light-transmitting member for closing the window to a window (opening) formed in the partition wall 18, here, general optical glass.
- a metal seal such as indium or copper, or a sealing with a fluororesin (sealing) is used to prevent gas from leaking from a mounting portion of the light transmitting member constituting the light transmitting window 71.
- a Y moving mirror 52 Ry composed of a plane mirror is extended in the X-axis direction.
- a length measurement beam from a ⁇ -axis laser interferometer 37 y arranged substantially perpendicular to the Y movable mirror 52 Ry outside the reticle chamber 15 is projected through a light transmission window 71.
- the reflected light is received by the detector inside the Y-axis laser interferometer 37 R y through the light transmission window 71, and moves in the Y direction with reference to the position of the reference mirror inside the Y-axis laser interferometer 37 R y.
- the position of the mirror 52 Ry that is, the Y position of the reticle R is detected.
- an X-moving mirror composed of a plane mirror extends in the Y-axis direction at the -X side end of the reticle holder 14B. Then, the position of the X movable mirror, that is, the X position of the reticle R is detected by an X-axis laser interferometer (not shown) through the X movable mirror in the same manner as described above. The detected values (measured values) of the above two laser interferometers are supplied to the main controller 50. Position control of reticle stage RST is performed based on the detection values of these laser interferometers.
- the laser interferometer that is, the laser light source, the optical members such as the prism, the detector, and the like are arranged outside the reticle chamber 15, the laser interferometer is used to detect the laser interferometer. Even if a small amount of absorbing gas is generated, this does not adversely affect exposure.
- FIG. 2 shows a reticle R held by the reticle holder 14B.
- a circuit pattern PA is formed on one surface PF of the reticle R (the lower surface in FIGS. 2 and 1).
- the surface on which the circuit pattern PA is formed is referred to as “pattern surface PF”.
- a reticle protection device 25 is attached to the pattern surface PF.
- the reticle protection device 25 includes a rectangular frame-shaped metal frame 26 attached to the pattern surface PF of the reticle R, as viewed from below, and a pattern of the frame 26.
- a hard pellicle 24 is provided as a protection portion W (transparent plate) fixed to the surface opposite to the surface PF.
- the frame 26 can be formed of a glass material similar to or different from a protective member described later.
- the hard pellicle 24 is disposed parallel to the pattern surface PF at a position about 6.3 mm below the pattern surface PF of the reticle R, and has a thickness of, for example, 300 to 80. It is about 0 Atm or more.
- F 2 laser light is used as the exposure light EL.
- Such F 2 laser beam is not only a gas such as oxygen or water vapor, since lower transmittance of the glass and organic matter in the reticle R and a hard pellicles also uses high transparently constant of vacuum ultraviolet light material There is a need.
- the material of the reticle R and the material of the hard pellicle 24 include, for example, a hydroxyl group of 1 O ppm or less. It is assumed that fluorine-doped quartz containing about 1% of fluorine is used.
- the space surrounded by the pattern surface PF, the frame 26, and the protective member (hard pellicle 24, etc.) needs to be replaced with a low-absorbent gas.
- a reticle focal position detection system (hereinafter, referred to as a “reticle AF system”) 20 including a system 20 a and a light receiving system 20 b that receives a reflected light beam from the pattern surface PF or the like is provided.
- the reticle AF system 20 is used to form a detection light beam, that is, a pinhole or slit image on the pattern surface PF of the reticle R via the hard pellicle 24.
- An irradiation system 20a for irradiating an imaging light beam, and a reflected light beam of an imaging light beam emitted from the irradiation system 20a from a lower surface of the hard pellicle 24 and an upper surface of the hard pellicle 24.
- a first photodetector S1 for receiving the light through the light receiving optical system L1, and a reticle of the imaging light flux provided near the light receiving optical system L1 and the first light detector S1, respectively.
- a light receiving system 20b including a second photodetector S2 and the like for receiving the light beam reflected by the R pattern surface PF via the light receiving optical system L2.
- the irradiation system 20a includes, for example, a light source (not shown) such as a light emitting diode that irradiates a red light belonging to a wavelength range of about 600 to 800 nm as a detection light beam, a pinhole or a slit-shaped opening. It is configured to include a formed aperture plate, an irradiation objective lens, and the like, and irradiates the imaging light beam at a predetermined incident angle toward the illumination area IAR on the pattern surface PF of the reticle R.
- a light source such as a light emitting diode that irradiates a red light belonging to a wavelength range of about 600 to 800 nm as a detection light beam, a pinhole or a slit-shaped opening. It is configured to include a formed aperture plate, an irradiation objective lens, and the like, and irradiates the imaging light beam at a predetermined incident angle toward the illumination area IAR on the pattern surface PF of the
- the light receiving optical system L1 includes a light receiving objective lens and other optical elements.
- a line sensor is used as the first photodetector S1 .
- the first photodetector S1 is a component of the imaging light flux irradiated from the irradiation system 20a.
- the luminous flux reflected on the upper surface (the surface facing the pattern surface PF of the reticle R) and the lower surface of the dopellicle 24 is respectively received, and each detection signal is output to the main controller 50. I have.
- the light receiving optical system L2 is configured to include other optical elements including a parallel plate (plane parallel) 69 in addition to the light receiving objective lens.
- a light receiving element capable of detecting a light receiving position such as a two-dimensional CCD or a four-division light receiving element is used.
- the second photodetector S2 receives the reflected light of the image forming light beam irradiated from the irradiation system 20a reflected by the pattern surface PF of the reticle R, and outputs the detection signal to the main controller 5a. Output to 0.
- the parallel plate 69 is disposed in the light receiving optical system L2 so that the inclination of the reflected light beam of the parallel plate 69 with respect to the optical axis is changed so that the second photodetector S This is because the optical axis of the reflected light beam incident on 2 can be shifted, and as a result, the second photodetector S2 is calibrated (origin is reset).
- the inclination angle of the parallel plate 69 is controlled by the main controller 50 via a drive system (not shown) so that the optical axis can be shifted according to the inclination angle.
- the calibration device is configured to include the parallel plate 69, the drive system thereof, and the main control device 50.
- the irradiation system 20 a is formed of the illumination area IAR (projection optical system described later) on the pattern surface PF of the reticle R.
- a plurality of (in this case, three) detection points arranged at predetermined intervals in the non-scanning direction (X-axis direction) within the exposure area (exposure area) of the PL are irradiated with the imaging light flux, respectively.
- the light receiving systems 2 Ob are provided individually corresponding to the respective detection points.
- the irradiation system 20a and the three light receiving systems 20b constitute a multipoint focal position detection system.
- the irradiation system 20a employs a configuration in which light from a single light source is divided into three through an optical system to irradiate the above three imaging light beams. It is also possible to adopt a configuration in which light from three light sources is used as each imaging light flux.
- the irradiation direction and the reflection direction of the imaging light flux are not limited to the ⁇ Z plane as shown in FIG. 3, but also to the XY plane as well as the XZ plane.
- the angle may be set in any plane as long as it intersects at a predetermined angle.
- the projection optical system PL is, for example, a telecentric reduction system on both sides, and includes a plurality of lens elements 70 a, 70 b,... Having a common optical axis in the Z-axis direction.
- the used refractive optical system is used.
- the pupil plane of the projection optical system P L has a positional relationship conjugate with the secondary light source surface formed by the fly-eye lens, and has a Fourier transform positional relationship with the reticle pattern surface.
- the projection optical system PL one having a projection magnification ⁇ of, for example, 14, 15 or 1-6 is used.
- the illumination area IAR on the reticle R is illuminated by the exposure light EL
- the pattern formed on the reticle R is reduced by the projection optical system PL at a projection magnification ⁇ . Is projected and transferred to a slit-shaped exposure area IA on a wafer W on the surface of which a resist (photosensitive agent) is applied.
- a plurality of lens elements including the lens element 70a closest to the reticle R can be driven independently.
- the lens element 70a is supported by a ring-shaped support member 76a, and this support member 76a is a telescopic drive element, for example, a piezo element 74a, 74b, 74c.
- the drive element 74c on the far side of the drawing is not shown), and is supported at three points and communicates with the lens barrel 76b.
- the driving elements 74a, 74b, and 74c allow the three points around the lens element 70a to be independently moved in the optical axis AX direction of the projection optical system PL. I have.
- the lens element 70a can be translated along the optical axis AX according to the displacement of the three driving elements 74a, 74b, 74c, and the optical axis AX Can be arbitrarily inclined with respect to a plane perpendicular to the plane.
- Other drivable lens elements are configured to be minutely driven in the optical axis AX direction and the tilt direction via the same driving mechanism as the driving mechanism of the lens element 70a.
- by driving the lens element 70a or the like it becomes possible to adjust, for example, Seidel's five aberrations (distortion, astigmatism, coma, spherical aberration, field curvature (focus)), and the like. I have. In this case, it is possible to independently correct the imaging characteristics by the number of lens elements that can be driven.
- the voltage applied to the drive element for driving the lens element 70a and the like is controlled by the imaging characteristic correction controller 78 based on a command from the main controller 50, and Thus, the amount of displacement of the drive element is controlled.
- the imaging characteristic correction controller 78 not only adjusts the aberration of the projection optical system PL, but also keeps the aberration constant with respect to fluctuations in the aberration of the projection optical system P due to changes in atmospheric pressure, absorption of illumination light, etc. It also has the function of keeping.
- the optical axis AX of the projection optical system P refers to the optical axis of the lens element 70b fixed to the lens barrel 76b and other lens elements (not shown).
- the light source is, in the present embodiment is a vacuum ultraviolet light source of F 2 laser having a wavelength output 1 5 7 nm, the gas in the optical path in the projection optical system PL, rare helium low absorption for vacuum ultraviolet light It is necessary to replace with gas or nitrogen gas (low absorption gas).
- the material of the lens element of the projection optical system PL is limited to a crystalline material such as fluorite having a large thermal expansion coefficient. Therefore, the temperature rise caused by the absorption of the exposure light EL by the lens element greatly affects the imaging characteristics and the like of the lens element and the projection optical system.
- the reactive gases helium gas, which has a large cooling effect, will be adopted.
- one end of an air supply pipe 30 and one end of an exhaust pipe 31 are connected to the lens barrel of the projection optical system PL.
- Other end Is connected to one end of a gas circulation device (not shown) that supplies helium gas into the lens barrel of the projection optical system PL and exhausts gas inside the lens barrel. It is connected to the other end of the circulation device.
- the gas circulating device always flows the helium gas into the projection optical system PL through the air supply line 30 and the exhaust line 31 so that the gas inside the lens barrel is always replaced with high-purity helium gas. It has become.
- the concentration of the absorptive gas inside the lens barrel is always maintained at a concentration of several Ppm or less.
- the gas circulating device has a built-in gas purifying device (not shown).
- a gas purifying device By the operation of the gas purifying device, helium gas is circulated through a circulation path including the gas circulating device and the inside of the lens barrel of the projection optical system PL. Even when used cyclically for a long time, the concentration of the absorbent gas in the lens barrel can be maintained at a concentration of several ppm or less.
- sensors such as a pressure sensor and an absorptive gas concentration sensor are provided inside the lens barrel, and the operation and stop of the pump incorporated in the gas circulation device is controlled via a control device (not shown) based on the measurement values of the sensors. It may be appropriately controlled.
- the wafer stage WST is arranged in the wafer chamber 40.
- the wafer chamber 40 is covered with a partition wall 41 that is tightly joined to the lens barrel of the projection optical system PL, and the gas inside the chamber 41 is isolated from the outside.
- the partition wall 41 of the wafer chamber 40 is formed of a material with low degassing such as stainless steel (SUS).
- SUS stainless steel
- the wafer stage WST includes an XY stage 34 and a wafer holder 35.
- the XY stage 34 is driven two-dimensionally by a linear motor or the like in the Y-axis direction, which is the scanning direction, and in the X-axis direction, which is orthogonal to the scanning direction (perpendicular to the plane of FIG. 1).
- a wafer holder 35 is mounted on the XY stage 34, and the wafer W is held by the wafer holder 35 by electrostatic suction (or vacuum suction).
- the wafer holder 35 is supported at three points by, for example, three actuators (for example, voice coil motors) and is independently driven in the Z-axis direction, whereby the position of the wafer W in the Z-axis direction ( focus Position) and the inclination with respect to the X ⁇ plane are adjusted.
- a linear motor driving the XY stage 34, an actuator driving the wafer holder 35, and the like are collectively shown as a wafer stage driving unit 56.
- the optical path from the projection optical system PL to the wafer W is also changed to nitrogen or rare in order to avoid absorption of the exposure light by an absorbing gas such as oxygen. It is necessary to replace with gas.
- one end of an air supply pipe 32 and one end of an exhaust pipe 33 are connected to the partition wall 41 of the wafer chamber 40, respectively.
- the other end of the air supply line 32 and the other end of the exhaust line 33 are connected to a helium gas supply device (not shown). Then, high-purity helium gas is constantly supplied from the helium gas supply device via the air supply line 32, and the gas inside the wafer chamber 40 is returned to the helium gas supply device via the exhaust line 33. In this way, helium gas is recycled.
- the helium gas supply device has a built-in gas purification device.
- the helium gas is circulated for a long time through a circulation path including the helium gas supply device and the inside of the wafer chamber 40. Even so, the concentration of absorptive gas (oxygen, water vapor, organic matter, etc.) other than helium gas in the wafer chamber 40 can be maintained at a concentration of several ppm or less.
- a sensor such as a pressure sensor or an absorptive gas concentration sensor is provided in the wafer chamber 40. The start and stop may be appropriately controlled.
- a light transmitting window 38 is provided on the ⁇ Y side wall of the partition wall 41 of the wafer chamber 40. Similarly, although not shown, a light-transmitting window is also provided on the side wall on the 1X side of the partition wall 41 (on the back side of the paper surface in FIG. 1). These light-transmitting windows are configured by attaching a light-transmitting member for closing the window to a window (opening) formed in the partition wall 41, here, general optical glass. In this case, gas leakage does not occur from the mounting portion of the light transmitting member constituting the light transmitting window 38. As described above, the mounting portion is provided with a metal seal such as indium or copper, and a seal made of a fluororesin.
- a Y movable mirror 52 Wy composed of a plane mirror is provided at an end of the wafer holder 35 on the negative side in the X-axis direction.
- a length measuring beam from a Y-axis laser interferometer 37 Wy arranged substantially perpendicular to the Y movable mirror 52 Wy outside the wafer chamber 40 is projected through a light transmission window 38.
- the reflected light is received by the detector inside the Y-axis laser interferometer 37 W y through the light transmission window 38, and moves in the Y direction with reference to the position of the reference mirror inside the Y-axis laser interferometer 37 W y
- the position of the mirror 52 Wy, that is, the Y position of the wafer W is detected.
- an X-moving mirror composed of a plane mirror extends in the Y-axis direction at an end on the ⁇ X side of the wafer holder 35. Then, the position of the X moving mirror, that is, the X position of the wafer W is detected by the X axis laser interferometer (not shown) through the X moving mirror in the same manner as described above.
- the detected values (measured values) of the above two laser interferometers are supplied to the main controller 50.
- the main controller 50 monitors the detected values of these laser interferometers while monitoring the wafer stage drive unit 5
- the position of the wafer stage WST is controlled via 6.
- the laser interferometer that is, the optical member such as the laser light source and the prism, the detector, and the like are arranged outside the wafer chamber 40, a small amount of light is absorbed from the detector or the like. Even if a volatile gas is generated, this does not adversely affect exposure.
- the helium gas supply device of the reticle chamber 15 and the wafer chamber 40 has a configuration in which a gas purification device is incorporated.
- the present invention is not limited to this.
- the exhaust gas exhausted from the reticle chamber 15 and the wafer chamber 40 may be exhausted via factory piping.
- the same configuration may be adopted in the gas circulation device provided in projection optical system PL.
- a fluorine-based resin is coated on the inner surface of the lens barrel of the projection optical system PL, or a hard film (such as a ceramic film or a stainless steel film) with less degassing is formed by plasma spraying. It is desirable to perform a chemical clean treatment by rubbing or electropolishing.
- a chemically clean material such as stainless steel or Teflon (registered trademark) may be used as the material.
- the exposure apparatus 100 of the present embodiment has a light source whose on / off is controlled by the main control unit 50 and is directed toward the image forming plane of the projection optical system PL.
- An oblique incidence type multi-point focal position detection system (hereinafter, referred to as a "wafer AF system”) consisting of a light receiving system 60b that receives the reflected light beam on the W surface and detects the Z position of the wafer W at each detection point 60) are provided.
- the detailed configuration of the multi-point focal position detection system similar to the wafer AF system 60 of the present embodiment is described in, for example, Japanese Patent Application Laid-Open No. Hei 6-284304 and U.S. Pat. 48, 332, etc.
- the output of the wafer AF system 60 is supplied to the main controller 50.
- national laws designated in this international application or selected elected countries the disclosures in the above-mentioned publications and U.S. patents are incorporated herein by reference.
- the control system is mainly constituted by a main controller 50 shown in FIG.
- the main controller 50 includes a so-called microcomputer (or workstation) including a CPU (central processing unit), a ROM (read-only memory), a RAM (random access memory), and the like. Then, in addition to performing the various control operations described above, for example, synchronous scanning of the reticle R and the wafer W, stepping of the wafer W, and the like are controlled so that the exposure operation is accurately performed.
- the main controller 50 controls the reticle R during scanning exposure, for example.
- the position and speed of the reticle stage RST and the wafer stage WS are controlled via the reticle stage drive unit 49 and the wafer stage drive unit 56, respectively.
- the reticle holder 14B is controlled based on the measurement values of the reticle X interferometer and the wafer X interferometer (not shown) so that a positional error does not occur between the reticle R and the wafer W in the X-axis direction. .
- the main controller 50 uses the laser interferometer 37 Wy and a wafer X interferometer (not shown) to measure the position of the wafer stage WST via the wafer stage drive unit 56 based on the measurement values. Control.
- the Z position of the wafer holder 35 and the inclination with respect to the XY plane of the wafer holder 35 are determined based on the detection results of the reticle AF system 20 and the wafer AF system 60.
- the intelligent focus (automatic focusing) and the intelligent leveling are executed.
- main controller 50 sets the detection offset of reticle AF system 20 based on the measurement result of reticle AF system 20 (or uses the offset to calibrate before starting exposure). Or adjust the imaging characteristics of the projection optics PL.
- these points will be described.
- the reason for setting the detection offset in the reticle AF system 20 is, as briefly described above, in the exposure apparatus 100 of the present embodiment, since the hard reticle R 24 is attached to the reticle R as described above, Due to the effect of this hard pellicle 24, reticle This is because the Z position of R cannot be accurately detected.
- the reticle R can be driven independently in the Z-axis direction.
- the hard pellicle 24 does not exist by the initial setting, or a pellicle (soft pellicle) formed of a thin film mainly composed of an organic material that is extremely thinner than the hard pellicle 24 is set.
- the reticle of the projection optical system PL defined by the maximum angle of incidence of the exposure light EL to the pattern surface PF determined by the numerical aperture N. of the projection optical system PL and the projection magnification a.
- the focal point BF on the side (object side) and the image light flux (detection light flux) F from the irradiation system 20 a of the reticle AF system 20 F reflected by the pattern surface PF FB 2 enters the second photodetector S 2 It is assumed that the reticle AF system 20 has been calibrated so that the launch position matches the detection reference point 0.
- the reticle R is dynamic drive upward (+ Zeta direction) by Derutazeta 2, that Do and the position of the pattern surface PF is set to the position of the code PF '.
- the offset ⁇ is added to the detection result of the second photodetector S2 to set a target position for alignment, and the reticle R is driven in the Z-axis direction based on the target value after setting.
- the pattern surface PF of the reticle R can be made coincident with the focal plane PF "on the reticle side of the projection optical system PL moved with the insertion of the hard pellicle 24.
- the relative distance between the projection optical system PL and the reticle R is relatively high. By changing the interval, reticle R having hard pellicle 24 can be used without any trouble.
- the inclination angle of the parallel plate in the light receiving optical system L2 in FIG. 2 is adjusted to correspond to the offset ⁇ as shown by the arrow A in FIG.
- the offset ⁇ Z or the optical axis shift amount ⁇ described above is uniquely determined according to the thickness t of the hard pellicle 24. That is, as described above, the incident angle ⁇ ′ of the exposure light EL, the exit angle in the hard pellicle 24) 8 ′ (this is the refractive index n and the incidence angle ⁇ ′ of the hard pellicle 24 with respect to the exposure light EL) , And is uniquely determined by the law of refraction), and the thickness t,
- the incident angle ⁇ ′ is a known constant
- the exposure light ⁇ Since the refractive index n of fluorine-doped quartz for L (fluorine laser light with a wavelength of 157 nm) is known, the emission angle 'is also a constant that can be easily calculated. Therefore, ⁇ can be expressed as the following equation (2).
- Ki is a proportionality constant determined based on the above ⁇ ′, ⁇ ,.
- K 2 is a proportionality constant determined based on the incident angle ⁇ of the detection light beam and the emission angle ⁇ of the detection light beam in the hard velicle 24.
- the offset ⁇ can be expressed as the following equation (4).
- K-Ki is the proportional constant defined by Ks.
- the first photodetector S1 reflects the reflected light flux of the imaging light flux irradiated from the irradiation system 20a on the upper surface and the lower surface of the hard pellicle 24.
- the respective detection signals are output to the main controller 50, so that the main controller 50 determines the upper surface of the hard pellicle 24 and the upper surface of the hard pellicle 24 based on the detection signal from the first photodetector S1. It is possible to calculate the interval (5 (see FIG. 2)) between the incident point of the light beam reflected on the lower surface and the light receiving surface of the photodetector S1.
- the proportional constant C is obtained in advance and stored in the RAM of the main control device 50 together with the equation (7). Therefore, the main controller 50 calculates (5) based on the detection signal from the first photodetector S1 and calculates
- the reticle AF system 20 can be calibrated by controlling the inclination of the parallel flat plate 69.
- (5 is proportional to the thickness t of the hard pellicle 24, so that measuring ⁇ means measuring the thickness t.
- the reticle R is driven in the Z-axis direction for convenience.
- the exposure apparatus 100 of the present embodiment does not have a Z-axis driving mechanism for the reticle R.
- the main controller 50 performs the above-described calibration of the reticle AF system 20 based on the detection result of the thickness of the hard pellicle 24 prior to the start of exposure. Then, at the time of scanning exposure, the defocus amount of the pattern surface PF of the reticle R is calculated based on the detection result of the second photodetector S2 of the reticle AF system 20 after this carry-brush.
- the reticle R pattern surface
- the wafer W surface
- the exposure of pattern surface PF of reticle R Three detection points (reticle irradiation points) of the reticle AF system 20 are provided in the illumination area irradiated with the light EL. Therefore, when the pattern surface PF is inclined in the non-scanning direction (there is a leveling error in the non-scanning direction), this can be detected. However, when the thickness of the hard pellicle 24 varies in the non-scanning direction, the same detection result as when the pattern surface PF has a leveling error in the non-scanning direction may be obtained.
- the thickness t of the hard pellicle 24 corresponding to each detection point is detected in order to detect the differential amount of the pattern surface PF for each position of each detection point, Based on the detection result, the above-described calibration of the second photodetector S2 (or the setting of the detection offset) is performed.
- the thickness t of the hard pellicle is accurately obtained in advance, it is not necessary to detect the thickness t of the hard pellicle.
- the thickness t of the hard pellicle is measured before the reticle with a hard pellicle is transported to the exposure apparatus, the thickness t of the hard pellicle measured in advance is determined by the exposure apparatus.
- the operator only has to input the data to an input / output device such as a console (not shown).
- the calibration of the second photodetector S2 may be performed based on this input.
- the thickness t of the hard pellicle is stored as barcode information on the reticle, and when the reticle with the hard pellicle is transported into the exposure apparatus, the barcode information is read by a barcode reader.
- a reading configuration may be employed.
- the thickness of the pellicle is determined by an experiment including printing of an actual pattern on the wafer W in advance, measurement of a pattern image via the projection optical system PL, or optical simulation.
- the lens element of the projection optical system PL for correcting each of the above-mentioned aberrations with t as a parameter A relational expression with the driving amount of the ment is obtained in advance and stored in the RAM.
- the main controller 50 sets the pellicle thickness measured before and after the reticle AF system 20 (for example, if the thickness at the three detection points is different, Based on the average value of the thickness at those three detection points, the average value of the thickness at the detection points at both ends, or the thickness at the center detection point), a command is sent to the imaging characteristic correction controller 78.
- the above-mentioned various aberrations of the projection optical system PL are corrected.
- the lens element is driven to correct the imaging characteristics of the projection optical system PL, a focus change occurs as a side effect, but it is assumed to be negligibly small.
- the main controller 50 gives a command to the imaging characteristic correction controller 78 to reduce the number of lens elements 70 a, 70 b, etc. constituting the projection optical system PL. At least one can be driven in the Z-axis direction to adjust the position of the pattern surface PF of the reticle R with respect to the reticle-side focal plane PF "(see Fig. 4).
- the operation of the exposure processing step is started as follows.
- a reticle alignment using a reticle microscope (not shown) and an optics alignment sensor (not shown), and preparation work such as baseline measurement of the alignment sensor are performed.
- the wafer W fine alignment eg, EGA (Enhanced Global) alignment
- the array coordinates of a plurality of shot areas on the wafer W are obtained.
- the main controller 50 determines the Y-axis laser interferometer 37 Wy on the wafer side and the X-axis (not shown) based on the alignment result.
- the wafer stage WST is moved to the scanning start position (acceleration start position) for exposure of the first shot area (first shot area) of the wafer W while monitoring the measured values of the laser interferometer.
- the main controller 50 starts scanning the reticle stage RST and the wafer stage WS in the Y direction, and when both stages RST and WST reach their respective target scanning speeds, the pattern of the reticle R is exposed by the exposure light EL.
- the area begins to be illuminated and scanning exposure begins.
- the main controller 5 0, in particular the moving speed V w in the Y-axis direction of the Y-axis direction of the moving velocity V R and the wafer stage WST reticle stage RST during the above scanning exposure according to the projection magnification ⁇ of the projection optical system PL
- the reticle stage RST and the wafer stage WST are controlled synchronously so that the speed ratio is maintained.
- the main controller 50 moves the wafer stage WST stepwise in the X and Y axes, thereby exposing the second shot area (second shot area).
- the main controller 50 uses the Y-axis laser interferometer 37 Wy on the wafer side and the X-axis laser interferometer to measure the displacement of the wafer stage WST in the X, Y, and 0 ⁇ directions based on the measurement values. Is measured in real time. Based on this measurement result, main controller 50 sets the position displacement to a predetermined state. Controls the position of the WST.
- main controller 50 controls the rotation of reticle holder 14B based on the information on the displacement of wafer stage WST in the 0z direction so as to compensate for the error in the rotational displacement of wafer W side.
- the main controller 50 performs the same scanning exposure on the second shot area as described above.
- the scanning exposure of the shot area on the wafer W and the stepping operation for the exposure of the next shot area are repeatedly performed, and the reticle R is exposed to all the exposure target shot areas on the wafer W. Circuit patterns are sequentially transferred.
- the main controller 50 performs focus-leveling control as follows. That is, the pattern of the reticle R from the detection reference position detected by any one of the second photodetectors S 2 (referred to as “5 2” for convenience) of the reticle AF system 20 after the above-described calibration.
- the displacement of the surface PF is defined as Rz, and a point on or near the wafer W corresponding to the detection point of the photodetector S2 ⁇ is set as a detection point.
- main controller 50 moves wafer holder 35 in the Z-axis direction such that ⁇ F becomes zero for all the detection points of reticle AF system 20, and thus, reticle R and reticle R move. Focus / leveling control is performed to keep the optical positional relationship with the wafer W constant.
- the main control device 50 includes an arithmetic device, and a first calculator and a second calculator that configure the arithmetic device.
- the main controller 50 and the reticle AF system 20 constitute a detection device that detects the thickness of the hard pellicle 24 that protects the pattern surface PF of the reticle R.
- the wafer holder 35, the wafer stage driver 56, and the main control A correction device for correcting the positional relationship between the reticle R and the wafer W is constituted by the device 50, and the optical characteristics of the projection optical system PL are corrected by the imaging characteristic correction controller 78 and the main control device 50.
- a correction device is configured.
- the position of the pattern surface PF of the reticle R in the Z direction can be accurately detected in accordance with the thickness of the hard pellicle 24 detected by the detection device. Exposure is possible in consideration of fluctuations in the image formation state of the image of the circuit pattern PA of the reticle R caused by 24. Therefore, it is possible to perform high-precision exposure without being affected by the thickness (or difference in thickness) of the hard pellicle 24.
- the hard pellicle 24 is formed of a transparent plate made of a parallel plate, and irradiates the pattern surface PF with the detection light beam through the hard pellicle 24 from a direction inclined at a predetermined angle ⁇ with respect to the normal line.
- a first photodetector S 1 that receives reflected light beams from a surface facing the pattern surface PF of the hard pellicle 24 and a surface opposite to the pattern surface PF and outputs respective detection signals
- a main controller 50 that calculates the thickness of the hard pellicle 24 based on the detection signal from the first photodetector S 1 constitutes a detection device. Therefore, the main controller 50 can detect the thickness of the hard pellicle 24 and other pattern protection members when necessary based on the detection signal of the first photodetector S1. .
- the thickness of the hard pellicle 24 is not necessarily set to the same thickness for all the hard pellicles, and a reticle without a pellicle may be used. Since the device 100 itself can detect the thickness of those pellicles, any reticle without pellicle, reticle with hard pellicle of different thickness, or reticle with soft pellicle can be used. It can be used without. Further, in the present embodiment, the detection device includes the second photodetector S2 that receives the reflected light beam from the pattern surface PF and outputs a detection signal, and based on the thickness of the hard pellicle 24, The second photodetector S2 can be calibrated.
- the main controller 50 constituting the detection device calculates the thickness of the pattern protection member such as the hard pellicle 24 based on the detection signal from the first photodetector S1, and calculates the thickness. Based on the measured thickness and the detection signal from the second photodetector S2, the Z position of the true pattern surface PF corrected for the displacement of the pattern surface PF of the reticle R due to the effect of the thickness of the pattern protection member (The position in the normal direction) or the true defocus amount can be calculated.
- a reticle is formed before the exposure based on the thickness of the protective material such as the hard pellicle 24 determined based on the output of the first photodetector S1.
- the AF system 20 is calibrated (or the detection offset is set), and the optical characteristics of the projection optical system are corrected. Also, at the time of scanning exposure, the positional relationship (optical positional relationship) between the reticle R and the wafer W is corrected (adjusted) in consideration of the detected value of the reticle AF system 20 on which the above-described calibration and the like have been performed. ), High-precision exposure is possible without a decrease in exposure accuracy due to defocus.
- the irradiation system 20a irradiates a plurality of detection points in the area of the pattern surface PF corresponding to the exposure area IA of the projection optical system PL with the detection light flux, and photodetector S 1, S 2 are each set vignetting individually corresponding to the respective detection points, the main controller 5 0, hard pellicles 2 4 by a plurality of first detection signals from the photodetector S 1
- the distribution of the thickness of the protective material such as the above is calculated, and the inclination of the wafer W with respect to the surface of the projection optical system PL in a direction perpendicular to the optical axis direction, that is, leveling is adjusted. Therefore, high-precision exposure can be realized without being affected by the distribution of the thickness of the hard pellicle.
- the vacuum ultraviolet region such as wavelength 1 5 7 nm of the F 2 laser beam Since the exposure is performed by the energy beam to which it belongs, the resolution of the projection optical system can be improved, so that a fine pattern can be transferred onto a wafer with high resolution.
- the positional relationship between the reticle and the wafer is adjusted, or the lens element in the projection optical system is driven.
- the present invention is not limited to this, and both adjustments may be combined to perform the adjustments comprehensively.
- the exposure apparatus of the second embodiment differs from the exposure apparatus 10 of the first embodiment in that a reticle AF system 120 shown in FIG. 5 is provided instead of the reticle AF system 20.
- the device configuration and the like are the same except for the point and the control function of the main controller 50 correspondingly slightly different. Therefore, the following description focuses on such differences.
- the reticle AF system 120 is used to form a detection light beam, that is, an image of a pinhole or a slit, on the pattern surface PF of the reticle R via the hard pellicle 24.
- An irradiation system 120 a having the same configuration as the above-described irradiation system 20 a for irradiating an image forming light beam (red light belonging to a wavelength range of about 600 nm to 800 nm).
- a light receiving system 1 including a photodetector S 3 and the like for receiving the light beam reflected from the pattern surface PF of the reticle R of the image light beam emitted from the reticle R via the light receiving optical system L 2 described above. 2 Ob.
- the photodetector S3 receives the light reflected from the pattern surface PF of the reticle R of the imaging light beam emitted from the irradiation system 120a from the irradiation system 120a, and outputs the detection signal to the main controller 50. It is supposed to. Then, based on the detection signal, main controller 50 detects the position of pattern surface PF of reticle R in the optical axis direction. That is, in the present embodiment, the reticle AF system 120 and the main control device 50 constitute a position detection system.
- the irradiation systems 120a are actually arranged at predetermined intervals in the non-scanning direction (X-axis direction) in the above-described illumination area IAR on the pattern surface PF of the reticle R.
- Each of the plurality of detected points is irradiated with an image forming light beam, and a light receiving system 120b is provided for each of the detected points individually.
- the illumination system 120a and the plurality of light receiving systems 120b constitute a multipoint focal position detection system.
- the incident angle ⁇ of the detection light beam (imaging light beam) from the irradiation system 120a is set to an angle within a range of 35 ° to 40 °. It has features. Hereinafter, the reason why the incident angle ⁇ is set in the range of 35 ° to 40 ° will be described.
- the numerical aperture N.A. of the projection optical system PL and the projection magnification are set.
- the focus BF on the reticle side (object plane side) of the projection optical system PL which is defined by the maximum angle of incidence ⁇ 'of the exposure light EL with respect to the pattern plane PF of the exposure light EL determined by r, and the reticle AF system 120 irradiation system 1 2 0 a force these imaging light beam so that the (detection light beam) F 8 1 of the optical detection can S incident position with respect to 3 and the detection reference point 0 of the reflected light beam FB 2 by the pattern surface PF coincides It is assumed that the reticle AF system 120 has been calibrated.
- a hard pellicle (parallel flat glass)
- the focal point BF on the reticle side (object plane side) of the projection optical system PL moves upward (+ Z direction) by ⁇ to the position of BF ′.
- ⁇ is the incident angle ⁇ ′ of the exposure light EL, its exit angle in the hard pellicle 24) 3 ′ (this is based on the refractive index ⁇ of the hard pellicle 24 with respect to the exposure light EL and the incident angle ⁇ ′).
- the amount of change Z in the focusing position of the imaging light flux caused by inserting a parallel plate glass with a thickness t near the object plane (or image plane) is the focal position of the optical system including the parallel plate glass. It is known that the following equation (9) can be used as a general equation to express the deviation.
- 01 is the angle of incidence on the parallel plate of the light beams
- 0 2 is the exit angle of the parallel plate glass of the light beams (light is refracted in the glass). From the law of refraction, the relationship of the angle 0 1 0 2 is as follows, where n is the refractive index of the parallel flat glass.
- ⁇ is the angle of incidence of the detection light beam on the hard pellicle 24, and) 8 is the exit angle of the detection light beam in the hard pellicle 24 (light is refracted inside the glass).
- offset Bok AZ A Zi- ⁇ 2 to be set in the reticle AF system 1 20, the AZi-AZS is satisfied, i.e., when the following equation (1 2) you satisfied, offset Bok It is understood that the setting of is unnecessary.
- the numerical aperture (NA) on the wafer side is usually set in the range of about 0.60 to 0.80, and the numerical aperture on the reticle side is the projection magnification of the numerical aperture on the wafer side. ⁇ times (1/1 of the imaging magnification from the wafer side to the reticle side). Since the projection magnification T is 1/4 or 1 Z5, the numerical aperture on the reticle side is 0.60X15 to 0.80X14, that is, about 0.12 to 0.20.
- a F 2 laser beam of the exposure light EL wavelength 1 57 nm when the material of the hard pellicle 24 is fluorine de one flop quartz, fluorine de - flop quartz F 2 laser beam Has a refractive index of 1.65,
- the detection light of the reticle AF system 120 for detecting the position of the reticle R has a wavelength of 600 nrr! Red light belonging to a wavelength range of about 800 nm is used.
- the refractive index of long wavelength light is lower than that of short wavelength light.
- the refractive index of the red color light belonging to a wavelength region of about 6 00 nm to 8 00 nm is 1.4 5 to 1.4 about 6, 1 of the F 2 laser beam. 6 5 It is smaller than.
- the displacement of the position coincides with the displacement of the detection position of the detection light (red light).
- the above equation (1 2) ′ holds.
- the incident angle ⁇ of the detection light from the irradiation system 120 a constituting the reticle AF system 120 is ⁇ But 3 5. Up to 40 ° (with a refractive index of 1.45-4.6) In this case, the detection error is about 40.0% of the thickness t of the hard pellicle 24.
- FIGS. 6B and 6C show a case where the incident angle ⁇ ′ of the exposure light EL is 11 ° and the incident angle ⁇ of the detection light is 40 ° in order to visually show this fact. I have. As can be seen from FIGS.
- the thickness tt 2 of the hard pellicle 24 can be reduced. Ikagani regardless of value, due to the insertion of the hard pellicle 2 4, so that the deviation of the detected position shift of the focus position and the detected light of the exposure light (F 2 lasers light) (red light) coincide.
- the incident angle ⁇ 3 ⁇ 4 of the detection light within the range of 35 to 40 °, the value of the above-described Z of the exposure light EL and the detection light of the reticle AF system 120 is reduced.
- the conditions are the same, and no error is caused by the thickness variation of the hard pellicle 24.
- the light source F 2 material of the laser and are parallel plate is not necessarily limited to the case of the fluorine-doped silica, for example, A r F excimer laser light source and the quartz hard pellicles or made fluorite, Even when a combination of hard particles is used, the incident angle ⁇ of the detection light under each condition is set so that the above Z becomes equal to the exposure light and the detection light irradiated from the irradiation system.
- the detection value of the reticle R by the detection light of the reticle AF system is not substantially affected by the error due to the thickness of the hard pellicle (or variation in the thickness). You.
- the material of the hard pellicle is not limited to the above-mentioned fluorine-doped quartz, and ordinary quartz, quartz having only a small number of hydroxyl groups, and quartz doped with hydrogen are used. It is also possible. Further, fluoride crystals such as fluorite, magnesium fluoride and lithium fluoride may be used. Further, in the exposure apparatus of the second embodiment, as described above, the three detection points (results) of the reticle AF system 120 are located within the illumination area of the reticle R where the exposure light EL of the pattern surface PF is irradiated. (Irradiation point of the image light beam) is provided.
- Incident angle of the light beam is also set in the range of 35 to 40 °.
- the photodetector S 3 that receives the reflected light flux of any of the detected light fluxes does not need to perform the detection offset setting (or the re-calibration described above) and regardless of the presence of the hard pellicle 24.
- the defocus amount at the corresponding detection point can be accurately detected, and when the pattern surface PF is inclined in the non-scanning direction (there is a leveling error in the non-scanning direction), this can be detected. It is possible to detect.
- the projection optical system PL for correcting each of the above-mentioned aberrations, using the thickness t of the pellicle (pattern protection member) as a parameter, is used.
- a relational expression with the driving amount of the lens element is obtained in advance and stored in the RAM.
- the imaging characteristic correction controller 7 A command is given to 8 to correct the above-mentioned various aberrations of the projection optical system PL.
- the lens element is driven to correct the imaging characteristics of the projection optical system PL, this causes a side effect of a focus change, which is negligibly small.
- the operation of the exposure processing step is performed in the same procedure as in the first embodiment described above, and at that time, during the scanning exposure, the main controller 50 controls the reticle in the same manner as in the first embodiment.
- the main controller 50 controls the reticle in the same manner as in the first embodiment.
- the presence or absence of the pattern protection member such as the hard pellicle 24 or the thickness thereof (or the difference in thickness) does not affect the reticle AF system 1.
- the differential value of the reticle pattern surface can be detected with high precision by using the reticle AF system 20 and the positional relationship between the reticle R and the wafer W (optical Since the correction (adjustment) of the positional relationship is performed, high-precision exposure can be performed without a decrease in exposure accuracy due to defocus.
- the exposure by the energy beam belonging to the vacuum ultraviolet region, such as wavelength 1 5 7 nm of the F 2 laser beam is performed, it is possible to improve the resolution of the projection optical system PL, and fine The pattern can be transferred onto the wafer with high resolution.
- the incident angle ⁇ of the detection light with respect to the reticle R is set in the range of 35 ° to 40 °.
- the present invention is not limited to this. May be set in the range.
- the correction of the fluctuation of the imaging characteristics of the projection optical system is performed by adjusting the thickness t of the hand pellicle 24 input by the operator via the console or the like (not shown) by the operator.
- the thickness of the hard pellicle 24 is measured by using a reticle AF system having the same configuration as the reticle AF system 20 of the first embodiment.
- the fluctuation of the imaging characteristics of the projection optical system may be corrected based on the measured value.
- the wafer W (wafer holder) is driven for the focus control (including the leveling control).
- the present invention is not limited to this, and the reticle R may be driven. .
- a reticle coarse movement stage driven in the scanning direction by a linear motor, and a rectangular frame-like shape that is arranged on the reticle coarse movement stage and can be minutely driven in the X ⁇ ⁇ ⁇ plane by a voice coil motor or the like.
- a reticle fine movement stage and a reticle holder that is supported at three points on the reticle fine movement stage and that can be driven in the Z direction and the tilt direction with respect to the XY plane by an electromagnetic force drive source such as a voice coil motor and holds the reticle R by suction.
- the focus control (including leveling control) described above may be performed by driving the reticle holder.
- the detection offset is set to the reticle AF system or the calibration of the reticle AF system is given according to the thickness of the pattern protection member such as the hard pellicle 24 has been described. However, even if the detection offset is set in the wafer AF system according to the thickness of the pattern protection member such as the hard pellicle 24, the same operation and effect can be obtained.
- the present invention is not limited to this.
- the reticle R itself can be moved up and down within the capture range of the reticle AF system 20 or 120 based on the reticle R to correct the aberration, and the position of the reticle can be used as the reference position of the subsequent reticle. good.
- the correction of the focus position, the correction of the imaging characteristics of the projection optical system PL, and the adjustment of the leveling are separately described. However, these are combined based on the detection result by the reticle AF system. Of course, it is also possible to carry out comprehensively.
- three reticle AF light receiving systems (and irradiation systems) are provided, but the present invention is not limited to this.
- the measurement direction of the distribution of the thickness of the hard pellicle by the plurality of reticle AF systems is set to the non-scanning direction in each of the above embodiments. However, the present invention is not limited to this. The oblique direction may be measured with respect to the non-scanning direction.
- the thickness of the hard veicle may be measured while moving the reticle in the scanning direction with respect to the three light receiving systems of the reticle AF system.
- the space surrounded by the pattern surface PF, the frame 26, and the protective member is also replaced with the low-absorbent gas.
- the wavelength 6 Since red light belonging to the wavelength range of 0 to 800 nm is used, it is not always necessary to replace the inside of the space with a low-absorbing gas.
- the configuration in which the inside of the reticle chamber 15, the inside of the wafer chamber 40, and the inside of the lens barrel of the projection optical system PL is replaced with helium has been described. May be substituted, or only the inside of the barrel of the projection optical system PL may be substituted with helium.
- the light source of the exposure apparatus of the above embodiment, F 2 laser light source, A r F excimer laser light source is not limited like the K r F excimer one laser light source, e.g., an infrared region, which is oscillated from a DFB semiconductor laser or a fiber laser Or single-wavelength laser light in the visible range is amplified by a fiber amplifier doped with, for example, erbium (or both erbium and ytterbium), and then converted to ultraviolet light using a nonlinear optical crystal. Waves may be used.
- the magnification of the projection system may be not only the reduction system but also any one of the same magnification and the enlargement system.
- the present invention is applied to a scanning exposure apparatus such as a step-and-scan method.
- a scanning exposure apparatus such as a step-and-scan method
- the scope of the present invention is not limited to this. That is, the present invention can be suitably applied to a step-and-repeat type reduction projection exposure apparatus.
- a method utilizing a levitation force due to a gas flow instead of magnetic levitation can be used.
- the gas it is desirable to use a low-absorbent gas filled in each stage chamber.
- the illumination optical system and projection optical system composed of multiple lenses are incorporated into the main body of the exposure apparatus, optical adjustment is performed, and the wafer stage (or reticle stage in the case of the scan type) is exposed with many mechanical parts. Attached to the main unit Connect the wires and pipes, assemble the partitions that make up the reticle chamber and wafer chamber, connect the gas piping system, connect each part to the control system, and make comprehensive adjustments (electrical adjustment, operation check, etc.)
- an exposure apparatus according to the present invention such as the exposure apparatus 100 of the above embodiment, can be manufactured. It is desirable that the exposure apparatus be manufactured in a clean room in which the temperature, cleanliness, etc. are controlled.
- FIG. 8 shows a flow chart of an example of manufacturing devices (semiconductor chips such as IC and LSI, liquid crystal panels, CCDs, thin-film magnetic heads, micromachines, etc.).
- a function and performance design of a device for example, a circuit design of a semiconductor device
- a pattern design for realizing the function is performed.
- step 202 mask manufacturing step
- step 203 wafer manufacturing step
- a wafer is manufactured using a material such as silicon.
- step 204 wafer processing step
- step 204 wafer processing step
- step 205 device assembling step
- step 205 includes, as necessary, processes such as a dicing process, a bonding process, and a packaging process (chip encapsulation).
- step 206 the device created in step 205 is inspected for an operation check test, a durability test, and the like. After these steps, the device is completed and shipped.
- FIG. 9 shows a detailed flow example of the above step 204 in the semiconductor device.
- step 211 oxidation step
- step 2 1 CVD step
- step 2 13 electrode formation step
- step 2 14 ion implantation step
- steps 21 1 to 21 4 constitutes a pre-processing step of each stage of wafer processing, and is selected and executed according to a necessary process in each stage.
- step 2 15 register forming step
- step 2 16 exposure step
- step 217 development step
- Step 218 etching step
- step 219 resist removing step
- the exposure apparatus of the above embodiment is used in the exposure step (step 2 16), so that the reticle pattern can be transferred onto the wafer with high accuracy. .
- the productivity (including yield) of highly integrated devices can be improved.
- Industrial applicability As described above, the first to third exposure apparatuses according to the present invention and the first to fourth exposure methods according to the present invention provide the effect of the thickness of the light-transmitting protective member for protecting the pattern surface of the mask. It is suitable for realizing high-precision exposure without receiving light. Further, the device manufacturing method of the present invention is suitable for producing a highly integrated microdevice.
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Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2002224066A AU2002224066A1 (en) | 2000-11-22 | 2001-11-21 | Aligner, aligning method and method for fabricating device |
JP2002544769A JPWO2002043123A1 (ja) | 2000-11-22 | 2001-11-21 | 露光装置、露光方法及びデバイス製造方法 |
KR10-2003-7002448A KR20030051624A (ko) | 2000-11-22 | 2001-11-21 | 노광장치, 노광방법 및 디바이스 제조방법 |
EP01997838A EP1341221A1 (en) | 2000-11-22 | 2001-11-21 | Aligner, aligning method and method for fabricating device |
US10/443,034 US20030197848A1 (en) | 2000-11-22 | 2003-05-22 | Exposure apparatus, exposure method, and device manufacturing method |
Applications Claiming Priority (2)
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JP2000-355447 | 2000-11-22 | ||
JP2000355447 | 2000-11-22 |
Related Child Applications (1)
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US10/443,034 Continuation US20030197848A1 (en) | 2000-11-22 | 2003-05-22 | Exposure apparatus, exposure method, and device manufacturing method |
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WO2002043123A1 true WO2002043123A1 (fr) | 2002-05-30 |
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ID=18827858
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PCT/JP2001/010184 WO2002043123A1 (fr) | 2000-11-22 | 2001-11-21 | Dispositif et procede d'alignement et procede de fabrication de dispositif |
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US (1) | US20030197848A1 (ja) |
EP (1) | EP1341221A1 (ja) |
JP (1) | JPWO2002043123A1 (ja) |
KR (1) | KR20030051624A (ja) |
CN (1) | CN1476629A (ja) |
AU (1) | AU2002224066A1 (ja) |
WO (1) | WO2002043123A1 (ja) |
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WO2003077030A2 (en) * | 2002-03-08 | 2003-09-18 | Canon Kabushiki Kaisha | Detection of position and estimation of surface shape |
US7221434B2 (en) | 2005-03-01 | 2007-05-22 | Canon Kabushiki Kaisha | Exposure method and apparatus |
US7379154B2 (en) | 2003-04-30 | 2008-05-27 | Asml Netherlands, B.V. | Lithographic apparatus, device manufacturing methods, mask and method of characterizing a mask and/or pellicle |
KR20190090871A (ko) * | 2017-02-27 | 2019-08-02 | 후지필름 가부시키가이샤 | 현미경 장치 및 관찰 방법과, 현미경 장치 제어 프로그램 |
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TW594431B (en) | 2002-03-01 | 2004-06-21 | Asml Netherlands Bv | Calibration methods, calibration substrates, lithographic apparatus and device manufacturing methods |
EP1341046A3 (en) * | 2002-03-01 | 2004-12-15 | ASML Netherlands B.V. | Calibration methods, calibration substrates, lithographic apparatus and device manufacturing methods |
US6809794B1 (en) * | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
JP2005051055A (ja) * | 2003-07-29 | 2005-02-24 | Tokyo Electron Ltd | 貼合せ方法および貼合せ装置 |
JP2005085991A (ja) * | 2003-09-09 | 2005-03-31 | Canon Inc | 露光装置及び該装置を用いたデバイス製造方法 |
US20060130767A1 (en) * | 2004-12-22 | 2006-06-22 | Applied Materials, Inc. | Purged vacuum chuck with proximity pins |
EP1689171A1 (en) * | 2005-02-03 | 2006-08-09 | Sony Ericsson Mobile Communications AB | LED flash control |
US20080073596A1 (en) * | 2006-08-24 | 2008-03-27 | Asml Netherlands B.V. | Lithographic apparatus and method |
JP5329520B2 (ja) * | 2007-03-27 | 2013-10-30 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 低角度で入射する補正光を用いる補正光学素子 |
WO2013152031A1 (en) | 2012-04-04 | 2013-10-10 | Kla-Tencor Corporation | Protective fluorine-doped silicon oxide film for optical components |
CN104977809B (zh) * | 2014-04-08 | 2017-06-27 | 上海微电子装备有限公司 | 一种光刻机垂向控制参数校准方法 |
TWI657316B (zh) | 2014-04-23 | 2019-04-21 | 荷蘭商庫力克及索發利特克責任有限公司 | 包含用於影像尺寸控制之投影系統的光微影裝置 |
CN105652598B (zh) * | 2014-11-11 | 2018-03-02 | 上海微电子装备(集团)股份有限公司 | 一种测量光刻机掩模台倾斜度和垂向度的装置及方法 |
US10459354B2 (en) | 2015-04-23 | 2019-10-29 | Asml Netherlands B.V. | Lithographic apparatus and lithographic projection method |
US11906907B2 (en) * | 2017-12-12 | 2024-02-20 | Asml Netherlands B.V. | Apparatus and method for determining a condition associated with a pellicle |
EP3628990B1 (en) * | 2018-09-26 | 2021-08-25 | ams International AG | Integrated optical transducer and method for detecting dynamic pressure changes |
CN116068848A (zh) * | 2021-11-03 | 2023-05-05 | 长鑫存储技术有限公司 | 光罩检测系统及方法 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2003077030A2 (en) * | 2002-03-08 | 2003-09-18 | Canon Kabushiki Kaisha | Detection of position and estimation of surface shape |
WO2003077030A3 (en) * | 2002-03-08 | 2004-06-17 | Canon Kk | Detection of position and estimation of surface shape |
US7379154B2 (en) | 2003-04-30 | 2008-05-27 | Asml Netherlands, B.V. | Lithographic apparatus, device manufacturing methods, mask and method of characterizing a mask and/or pellicle |
JP2008182270A (ja) * | 2003-04-30 | 2008-08-07 | Asml Netherlands Bv | マスク |
US7221434B2 (en) | 2005-03-01 | 2007-05-22 | Canon Kabushiki Kaisha | Exposure method and apparatus |
KR20190090871A (ko) * | 2017-02-27 | 2019-08-02 | 후지필름 가부시키가이샤 | 현미경 장치 및 관찰 방법과, 현미경 장치 제어 프로그램 |
KR102236184B1 (ko) | 2017-02-27 | 2021-04-02 | 후지필름 가부시키가이샤 | 현미경 장치 및 관찰 방법과, 현미경 장치 제어 프로그램 |
Also Published As
Publication number | Publication date |
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US20030197848A1 (en) | 2003-10-23 |
AU2002224066A1 (en) | 2002-06-03 |
CN1476629A (zh) | 2004-02-18 |
KR20030051624A (ko) | 2003-06-25 |
EP1341221A1 (en) | 2003-09-03 |
JPWO2002043123A1 (ja) | 2004-04-02 |
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