WO2002041076A3 - Photolithographische maske - Google Patents

Photolithographische maske Download PDF

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Publication number
WO2002041076A3
WO2002041076A3 PCT/DE2001/004263 DE0104263W WO0241076A3 WO 2002041076 A3 WO2002041076 A3 WO 2002041076A3 DE 0104263 W DE0104263 W DE 0104263W WO 0241076 A3 WO0241076 A3 WO 0241076A3
Authority
WO
WIPO (PCT)
Prior art keywords
openings
wafer
auxiliary openings
auxiliary
opening
Prior art date
Application number
PCT/DE2001/004263
Other languages
English (en)
French (fr)
Other versions
WO2002041076A2 (de
Inventor
Uwe Griesinger
Mario Hennig
Juergen Knobloch
Rainer Pforr
Manuel Vorwerk
Original Assignee
Infineon Technologies Ag
Uwe Griesinger
Mario Hennig
Juergen Knobloch
Rainer Pforr
Manuel Vorwerk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Uwe Griesinger, Mario Hennig, Juergen Knobloch, Rainer Pforr, Manuel Vorwerk filed Critical Infineon Technologies Ag
Priority to JP2002542940A priority Critical patent/JP3943020B2/ja
Priority to EP01996769A priority patent/EP1334406A2/de
Priority to KR1020037006489A priority patent/KR100564171B1/ko
Publication of WO2002041076A2 publication Critical patent/WO2002041076A2/de
Publication of WO2002041076A3 publication Critical patent/WO2002041076A3/de
Priority to US10/438,370 priority patent/US6838216B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/29—Rim PSM or outrigger PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

Den auf einen Wafer zu übertragenden Öffnungen (1) auf einer Maske sind Hilfsöffnungen (2) zugeordnet. Diese besitzen eine Vorzugsweise zwischen 160° und 200° liegende phasenschiebende Eigenschaft gegenüber den Öffnungen (1), sowie einen unterhalb der Grenzdimension (31) für das Printing des Projektionsapparates liegenden Querschnitt (21), so daß die Hilfsöffnungen (2) selbst nicht auf den Wafer geprintet werden. Gleichzeitig verstärken sie aber den Kontrast des Luftbildes insbesondere einer zugeordneten isolierten oder halbisolierten Öffnung (1) auf dem Wafer. In einer Ausführungsform besitzen die Hilfsöffnungen (2) einen oberhalb der Auflösungsgrenze des Projektionsapparates liegenden Abstand von der Öffnung (1), welche aber kleiner als die Kohärenzlänge des für die Projektion benutzten Lichtes ist. Ihre Wirkung besteht in einer phasenbezogenen Ausnutzung des optischen Proximity-Effektes, welches bei Einrichtung der Hilfsöffnungen (2) in einer Vorzugsrichtung zur Erzeugung elliptischer Strukturen (1') auf einem Wafer auf quadratischen Öffnungen (1) auf der Maske ausgenutzt werden kann. Die Folge ist eine erhebliche Vergrößerung des Prozeßfensters für die Projektion, insbesondere von Substratkontaktierungsebenen auf einen Wafer.
PCT/DE2001/004263 2000-11-14 2001-11-14 Photolithographische maske WO2002041076A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002542940A JP3943020B2 (ja) 2000-11-14 2001-11-14 フォトリソグラフィーマスク
EP01996769A EP1334406A2 (de) 2000-11-14 2001-11-14 Photolithographische maske
KR1020037006489A KR100564171B1 (ko) 2000-11-14 2001-11-14 포토리소그래피 마스크 및 프로젝션 장치에서의 웨이퍼노출 방법
US10/438,370 US6838216B2 (en) 2000-11-14 2003-05-14 Photolithographic mask and methods for producing a structure and of exposing a wafer in a projection apparatus

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE10056262 2000-11-14
DE10056262.0 2000-11-14
DE10126838 2001-06-01
DE10126838.6 2001-06-01

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/438,370 Continuation US6838216B2 (en) 2000-11-14 2003-05-14 Photolithographic mask and methods for producing a structure and of exposing a wafer in a projection apparatus

Publications (2)

Publication Number Publication Date
WO2002041076A2 WO2002041076A2 (de) 2002-05-23
WO2002041076A3 true WO2002041076A3 (de) 2003-01-03

Family

ID=26007651

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2001/004263 WO2002041076A2 (de) 2000-11-14 2001-11-14 Photolithographische maske

Country Status (6)

Country Link
US (1) US6838216B2 (de)
EP (1) EP1334406A2 (de)
JP (1) JP3943020B2 (de)
KR (1) KR100564171B1 (de)
TW (1) TW574602B (de)
WO (1) WO2002041076A2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1334406A2 (de) * 2000-11-14 2003-08-13 Infineon Technologies AG Photolithographische maske
DE10136291B4 (de) 2001-07-25 2008-05-08 Qimonda Ag Photolithographische Maske
DE10203358A1 (de) * 2001-08-31 2003-04-03 Infineon Technologies Ag Photolithographische Maske
DE10327613B4 (de) * 2003-06-18 2007-10-31 Infineon Technologies Ag Verfahren zur Bildung einer Öffnung auf einer alternierenden Phasenmaske
US6905975B2 (en) * 2003-07-03 2005-06-14 Micron Technology, Inc. Methods of forming patterned compositions
KR100546119B1 (ko) * 2003-10-23 2006-01-24 주식회사 하이닉스반도체 어레이 콘텍의 일정성과 정렬 정확성을 향상시킬 수 있는ｅｄｇｅ ｃｏｒｒｅｃｔｉｏｎ 방법
JP4585197B2 (ja) * 2003-12-22 2010-11-24 ルネサスエレクトロニクス株式会社 レイアウト設計方法およびフォトマスク
US7575852B2 (en) * 2004-08-20 2009-08-18 Macronix International Co., Ltd. Method of optically transferring a pattern from a mask having advanced oriented assist features for integrated circuit hole patterns
DE102004058813A1 (de) * 2004-12-07 2006-06-08 Infineon Technologies Ag Maske und Belichtungseinrichtung
US20080305409A1 (en) * 2007-06-08 2008-12-11 Palmer Shane R Lithographic mask and method for printing features using the mask
US20090191468A1 (en) * 2008-01-29 2009-07-30 International Business Machines Corporation Contact Level Mask Layouts By Introducing Anisotropic Sub-Resolution Assist Features
US20090250760A1 (en) * 2008-04-02 2009-10-08 International Business Machines Corporation Methods of forming high-k/metal gates for nfets and pfets
US7975246B2 (en) * 2008-08-14 2011-07-05 International Business Machines Corporation MEEF reduction by elongation of square shapes
WO2010086850A2 (en) 2009-01-29 2010-08-05 Digiflex Ltd. Process for producing a photomask on a photopolymeric surface
US8765329B2 (en) * 2010-11-05 2014-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. Sub-resolution rod in the transition region
USD776664S1 (en) * 2015-05-20 2017-01-17 Chaya Coleena Hendrick Smart card
TWI704647B (zh) * 2015-10-22 2020-09-11 聯華電子股份有限公司 積體電路及其製程
CN112946993A (zh) * 2019-11-26 2021-06-11 中芯国际集成电路制造(上海)有限公司 光学邻近修正、光掩膜版制作及图形化方法
CN112631068B (zh) * 2020-12-25 2024-01-09 上海华力集成电路制造有限公司 版图Dense-3Bar-Dense结构的修正方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229230A (en) * 1990-12-18 1993-07-20 Mitsubishi Denki Kabushiki Kaisha Photomask
US5578422A (en) * 1991-07-11 1996-11-26 Hitachi, Ltd. Manufacturing method or an exposing method for a semiconductor device or a semiconductor integrated circuit device and a mask used therefor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1334406A2 (de) * 2000-11-14 2003-08-13 Infineon Technologies AG Photolithographische maske

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229230A (en) * 1990-12-18 1993-07-20 Mitsubishi Denki Kabushiki Kaisha Photomask
US5578422A (en) * 1991-07-11 1996-11-26 Hitachi, Ltd. Manufacturing method or an exposing method for a semiconductor device or a semiconductor integrated circuit device and a mask used therefor

Also Published As

Publication number Publication date
KR100564171B1 (ko) 2006-03-27
JP3943020B2 (ja) 2007-07-11
US20040038135A1 (en) 2004-02-26
JP2004514171A (ja) 2004-05-13
WO2002041076A2 (de) 2002-05-23
US6838216B2 (en) 2005-01-04
TW574602B (en) 2004-02-01
EP1334406A2 (de) 2003-08-13
KR20040005859A (ko) 2004-01-16

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