WO2002037541A3 - Etch chamber for etching dielectric layer with expanded process window - Google Patents

Etch chamber for etching dielectric layer with expanded process window Download PDF

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Publication number
WO2002037541A3
WO2002037541A3 PCT/US2001/046012 US0146012W WO0237541A3 WO 2002037541 A3 WO2002037541 A3 WO 2002037541A3 US 0146012 W US0146012 W US 0146012W WO 0237541 A3 WO0237541 A3 WO 0237541A3
Authority
WO
WIPO (PCT)
Prior art keywords
liner
chamber
thermally
fluid
plasma
Prior art date
Application number
PCT/US2001/046012
Other languages
French (fr)
Other versions
WO2002037541A2 (en
Inventor
James D Carducci
Hamid Noorbakhsh
Evans Y Lee
Bryan Y Pu
Hongqing Shan
Claes Bjorkman
Siamak Salimian
Paul E Luscher
Michael D Welch
Jingbao Liu
Takehiko Komatsu
Kenny L Doan
Melody Chang
Zhuxu Wang
Yunsang Kim
Ruiping Wang
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/704,867 external-priority patent/US6403491B1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to EP01993018A priority Critical patent/EP1334514A2/en
Priority to JP2002540195A priority patent/JP2004513516A/en
Publication of WO2002037541A2 publication Critical patent/WO2002037541A2/en
Publication of WO2002037541A3 publication Critical patent/WO2002037541A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

A thermally controlled plasma etch chamber with an expanded processing window has a thermally controlled chamber liner, thermally differentiated gas inlets, a high evacuation capability, a magnetic confinement and adhesion improving surface textures. The internal wall surfaces of the chamber are conditioned according to one or several surface texturing treatments adapted to improve by-product adhesion thereon. The expanded flow capability enables short residence. A fluid through the one or more fluid passages formed at least partially in the chamber liner may comprise a first liner, a second liner or both a first liner and a second liner. A plurality of gas nozzles or mini-distribution plates having a small thermal mass and thermally differentiated from the temperature controlled liner or liners is introduce process gases in to the processing chamber. A plasma confinement system prevents plasma and by products from extering the pumping channel or exhaust system components. The substrate support includes an electrostatic chuck, dual zone backside cooling, and a robust electrode. The support comprises a ceramic substrate support of predetermined resistivity, a support plate having a fluid channel, and a thermally conductive layer inbetween which may comprise a presure sensitive acrylic adhesive and a metal or metal alloy.
PCT/US2001/046012 2000-11-01 2001-11-01 Etch chamber for etching dielectric layer with expanded process window WO2002037541A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP01993018A EP1334514A2 (en) 2000-11-01 2001-11-01 Dielectric etch chamber with expanded process window
JP2002540195A JP2004513516A (en) 2000-11-01 2001-11-01 Dielectric etch chamber with extended process window

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US70497200A 2000-11-01 2000-11-01
US09/704,972 2000-11-01
US09/704,867 2000-11-01
US09/704,867 US6403491B1 (en) 2000-11-01 2000-11-01 Etch method using a dielectric etch chamber with expanded process window

Publications (2)

Publication Number Publication Date
WO2002037541A2 WO2002037541A2 (en) 2002-05-10
WO2002037541A3 true WO2002037541A3 (en) 2002-10-10

Family

ID=27107394

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/046012 WO2002037541A2 (en) 2000-11-01 2001-11-01 Etch chamber for etching dielectric layer with expanded process window

Country Status (5)

Country Link
EP (1) EP1334514A2 (en)
JP (1) JP2004513516A (en)
KR (1) KR100887014B1 (en)
TW (1) TW588401B (en)
WO (1) WO2002037541A2 (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100468203B1 (en) * 2002-08-16 2005-01-26 어댑티브프라즈마테크놀로지 주식회사 Apparatus and Method for controlling temperature of dome in Plasma etching system
US7140374B2 (en) 2003-03-14 2006-11-28 Lam Research Corporation System, method and apparatus for self-cleaning dry etch
US7009281B2 (en) * 2003-03-14 2006-03-07 Lam Corporation Small volume process chamber with hot inner surfaces
US20050230350A1 (en) * 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US7959984B2 (en) * 2004-12-22 2011-06-14 Lam Research Corporation Methods and arrangement for the reduction of byproduct deposition in a plasma processing system
US20070257686A1 (en) * 2006-05-01 2007-11-08 Oscar Beijert Integrated circuit probe card analyzer
US7718029B2 (en) * 2006-08-01 2010-05-18 Applied Materials, Inc. Self-passivating plasma resistant material for joining chamber components
US8597462B2 (en) * 2010-05-21 2013-12-03 Lam Research Corporation Movable chamber liner plasma confinement screen combination for plasma processing apparatuses
US20130105085A1 (en) * 2011-10-28 2013-05-02 Applied Materials, Inc. Plasma reactor with chamber wall temperature control
US20140116622A1 (en) * 2012-10-31 2014-05-01 Semes Co. Ltd. Electrostatic chuck and substrate processing apparatus
TWI480417B (en) 2012-11-02 2015-04-11 Ind Tech Res Inst Air showr device having air curtain and apparatus for depositing film using the same
KR101542905B1 (en) * 2013-04-26 2015-08-07 (주)얼라이드 테크 파인더즈 Semiconductor device
US9384948B2 (en) * 2013-06-13 2016-07-05 Lam Research Corporation Hammerhead TCP coil support for high RF power conductor etch systems
US9597701B2 (en) * 2013-12-31 2017-03-21 Lam Research Ag Apparatus for treating surfaces of wafer-shaped articles
US10741425B2 (en) * 2017-02-22 2020-08-11 Lam Research Corporation Helium plug design to reduce arcing
US10381200B2 (en) 2017-03-08 2019-08-13 Applied Materials, Inc. Plasma chamber with tandem processing regions
CN111370281B (en) 2018-12-26 2023-04-28 中微半导体设备(上海)股份有限公司 Plasma etching device
CN111446144B (en) * 2019-01-17 2024-04-19 东京毅力科创株式会社 Control method of electrostatic adsorption part and plasma processing device
KR102217452B1 (en) * 2019-07-05 2021-02-22 세메스 주식회사 Apparatus for controlling temperature of top module and system for treating substrate with the apparatus
JP7370228B2 (en) * 2019-11-22 2023-10-27 東京エレクトロン株式会社 plasma processing equipment
US11686208B2 (en) 2020-02-06 2023-06-27 Rolls-Royce Corporation Abrasive coating for high-temperature mechanical systems
US11499223B2 (en) 2020-12-10 2022-11-15 Applied Materials, Inc. Continuous liner for use in a processing chamber
KR102646591B1 (en) * 2022-05-13 2024-03-12 세메스 주식회사 Substrate processing apparatus

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0512936A1 (en) * 1991-05-02 1992-11-11 International Business Machines Corporation Temperature cycling ceramic electrostatic chuck
US5753132A (en) * 1994-01-31 1998-05-19 Applied Materials, Inc. Method of making electrostatic chuck with conformal insulator film
US5788799A (en) * 1996-06-11 1998-08-04 Applied Materials, Inc. Apparatus and method for cleaning of semiconductor process chamber surfaces
JPH10209257A (en) * 1997-01-22 1998-08-07 Tomoegawa Paper Co Ltd Electrostatic chuck device and its manufacture
US5798016A (en) * 1994-03-08 1998-08-25 International Business Machines Corporation Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability
US5886863A (en) * 1995-05-09 1999-03-23 Kyocera Corporation Wafer support member
JPH11176920A (en) * 1997-12-12 1999-07-02 Shin Etsu Chem Co Ltd Electrostatic chuck device
EP0942060A1 (en) * 1996-12-04 1999-09-15 Nitto Denko Corporation Thermally conductive pressure-sensitive adhesive, adhesive sheet containing the same, and method for fixing electronic part to heat-radiating member with the same
US6166897A (en) * 1997-01-22 2000-12-26 Tomoegawa Paper Co., Ltd. Static chuck apparatus and its manufacture

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0512936A1 (en) * 1991-05-02 1992-11-11 International Business Machines Corporation Temperature cycling ceramic electrostatic chuck
US5753132A (en) * 1994-01-31 1998-05-19 Applied Materials, Inc. Method of making electrostatic chuck with conformal insulator film
US5798016A (en) * 1994-03-08 1998-08-25 International Business Machines Corporation Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability
US5886863A (en) * 1995-05-09 1999-03-23 Kyocera Corporation Wafer support member
US5788799A (en) * 1996-06-11 1998-08-04 Applied Materials, Inc. Apparatus and method for cleaning of semiconductor process chamber surfaces
EP0942060A1 (en) * 1996-12-04 1999-09-15 Nitto Denko Corporation Thermally conductive pressure-sensitive adhesive, adhesive sheet containing the same, and method for fixing electronic part to heat-radiating member with the same
JPH10209257A (en) * 1997-01-22 1998-08-07 Tomoegawa Paper Co Ltd Electrostatic chuck device and its manufacture
US6166897A (en) * 1997-01-22 2000-12-26 Tomoegawa Paper Co., Ltd. Static chuck apparatus and its manufacture
JPH11176920A (en) * 1997-12-12 1999-07-02 Shin Etsu Chem Co Ltd Electrostatic chuck device
US6122159A (en) * 1997-12-12 2000-09-19 Shin Etsu-Chemical Co., Ltd. Electrostatic holding apparatus

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 12 29 October 1999 (1999-10-29) *

Also Published As

Publication number Publication date
EP1334514A2 (en) 2003-08-13
KR20020081240A (en) 2002-10-26
WO2002037541A2 (en) 2002-05-10
KR100887014B1 (en) 2009-03-04
TW588401B (en) 2004-05-21
JP2004513516A (en) 2004-04-30

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