JP3161394B2 - Plasma CVD equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma CVD apparatus having an intermediate mesh plate electrode for separating a plasma generation region and a substrate process region, and more particularly to the suppression of floating of particles deposited on components in a chamber and separation of film fragments. It is about.

[0002]

2. Description of the Related Art One of plasma CVD methods for forming a film on a substrate while suppressing plasma damage is a remote plasma CVD method for spatially separating a plasma generation region and a substrate to be deposited. It is an important technology as a thin film forming method capable of producing a highly reliable device or a high performance device. As a remote plasma CVD apparatus capable of coping with a large substrate thin film forming process such as a switching transistor forming process and a driving circuit transistor forming process of a large area flat panel display, and a large diameter silicon wafer process,
For example, as disclosed in JP-A-5-21393, a mesh plate electrode having a plurality of holes is installed between a high-frequency application electrode and a counter electrode on which a substrate to be deposited is installed in a parallel plate plasma CVD apparatus. A parallel plate remote plasma CVD apparatus for confining plasma between the intermediate mesh plate electrode and the high frequency application electrode is known. This parallel plate remote plasma CVD apparatus includes a silicon oxide film or a silicon nitride film serving as a gate insulating film in a thin film transistor on a large glass substrate, an amorphous silicon film serving as an active layer or a gate electrode in a thin film transistor on a large glass substrate, and a large Si film. It is particularly useful for a silicon oxide film, a silicon nitride film, or the like that becomes an interlayer insulating film in a transistor element on a substrate.

[0003]

FIG. 28 is a schematic view of a conventional parallel plate remote plasma CVD apparatus, which explains how silicon oxide powder particles are generated and adhered when a silicon oxide film is formed. In the remote plasma CVD apparatus, for example, when the silicon oxide film 4 is formed using the monosilane gas 9 and the oxygen gas 5 as the material gases, as shown in FIG. 28, the material gas injector 8 for introducing the monosilane gas 9 and the like as well as the inner wall of the chamber. A silicon oxide film is also deposited on the intermediate mesh plate electrode 11. Here, the reaction between the monosilane gas 9 and the oxygen radicals 7 diffused in the vicinity of the material gas injector 8 is intense, and the film thickness of silicon oxide deposited on the material gas injector 8 and the intermediate mesh plate electrode 11 located near the material gas injector is increased. Thicker than the substrate 3, the film tends to contain the silicon oxide powder particles 12. Further, in the conventional remote plasma CVD apparatus, the material gas injector 8 and the intermediate mesh plate electrode 1
The temperature 1 is at most 70 ° C. even considering the radiant heat from the heater of the substrate-side counter electrode 2 including the heater, and the lower the temperature, the more the deposited film becomes powdery. Note that a silicon oxide film and other CVD films generally have a property of easily becoming powdery under low-temperature, high-speed deposition, and high-pressure deposition conditions.

The powdery particles 12 float and adhere to the substrate 3 on which a device is to be formed. When a film is formed on the silicon oxide powdery particles 14 adhered to the substrate 3, the particles The attached portion has very low insulating properties, and becomes unsuitable for a gate insulating film or an interlayer insulating film of a MOS device.

FIG. 29 is a schematic view of a conventional material gas injector, in which the attached silicon oxide film is thickened.
The manner in which the film pieces are separated will be described. As shown in FIG.
The material gas injector 22 is usually made of stainless steel,
Due to the difference in thermal expansion coefficient between the silicon oxide film and the stainless steel, cracks 17 enter the deposited silicon oxide thick film 18 due to a change in the chamber temperature, and the silicon oxide film piece 21 peels off from the stainless steel material gas injector 22. When the release film piece 21 adheres to the substrate to be deposited at the time of film formation and a film is formed thereon, the MO particles are removed similarly to the case of the powdery particles.
It becomes unsuitable as a gate insulating film or an interlayer insulating film of the S element.

In order to avoid the above problems, there is a method of frequently performing dry etching cleaning and wet etching cleaning of chamber components, but this method reduces productivity.

Japanese Patent Application Laid-Open No. Hei 5-291240 discloses a technique for preventing a deposit at the bottom of a reaction chamber from separating or floating to deposit on a substrate as particles. In this technique, a plasma CVD film is formed while flowing nitrogen or an inert gas into a reaction chamber from a number of small holes formed in the bottom of the reaction chamber. Accordingly, even if excess gas reacts and falls to the bottom of the reaction chamber, the gas is exhausted without adhering to the bottom because nitrogen gas or the like is blown out.

In the microfilm of Japanese Utility Model Application No. 61-55174 (Japanese Utility Model Application Laid-Open No. 62-166627), a partition is provided on the ion source side of the chamber, and the side wall of the sub-chamber formed by the partition is provided. There is disclosed a technique in which a rare gas introduction port for introducing a rare gas is provided, and a rare gas is introduced from a direction orthogonal to a flow of dust which has entered with ion plasma or particles. As a result, the rare gas collides with the dust and the dust is scattered, so that the dust does not directly reach the wafer.

However, even in these publications, it is not possible to prevent the film from being deposited on the material gas injector or the intermediate mesh plate electrode.

An object of the present invention is to provide a plasma CVD apparatus capable of suppressing deposition of powdery particles on a chamber component and peeling of a film from the chamber component due to a difference in thermal expansion coefficient.

[0011]

SUMMARY OF THE INVENTION In order to achieve the above object, the present invention provides a plasma CVD method having an intermediate mesh plate electrode for plasma separation provided with a plurality of holes between a plasma generation chamber and a substrate processing chamber. In the apparatus or the plasma CVD apparatus having a material gas injector between an intermediate mesh plate and a substrate, the following means is adopted. (1) A mechanism for suppressing the reaction of the material gas near the intermediate mesh plate electrode. In a plasma CVD apparatus having a material gas injector, the reaction of the material gas near the material gas injector is suppressed. Specifically, this can be achieved by having a mechanism for injecting an inert gas between the plasma generation chamber and the substrate processing chamber.

By providing a mechanism for injecting an inert gas, rapid generation of a film precursor near the material gas injector and the intermediate mesh plate electrode can be suppressed. Particles are suppressed or prevented from adhering to the mesh plate electrode. Therefore, it is possible to suppress or prevent particles from floating from the material gas injector or the intermediate mesh plate electrode and adhere to the substrate to be deposited, and to form a gate insulating film or an interlayer insulating film of a defect-free MOS device. Become.

The mechanism for ejecting the inert gas is as follows.
Configurations such as (2) to (5) are possible. (2) An inert gas injector is provided between the intermediate mesh plate electrode and the material gas injector. (3) The intermediate mesh plate electrode has holes through which radicals generated in the plasma generation region pass and holes through which inert gas is injected. (4) The intermediate mesh plate electrode has a hole through which radicals generated in the plasma generation region pass, a hole through which a material gas is injected, and a hole through which an inert gas is injected. (5) The gas injector has a hole through which radicals generated in the plasma generation region pass, a hole through which a material gas is injected, and a hole through which an inert gas is injected.

Another means for solving the above problems is as follows. (6) Means are provided for preventing the film deposited on the intermediate mesh plate electrode (the intermediate mesh plate electrode or the material gas injector when having a material gas injector) from peeling off. Therefore, at least the difference in thermal expansion coefficient between the material on the surface of the intermediate mesh plate electrode and the film-forming material (and / or at least the difference in thermal expansion coefficient between the material on the material gas injector surface and the film-forming material) increases the thermal expansion coefficient between stainless steel and the film-forming material. It is characterized by being smaller than the coefficient difference.

In the above-mentioned intermediate mesh plate electrode or material gas injector, when the temperature of the CVD chamber changes, the difference in thermal expansion coefficient between the film and the film forming material is small. Is prevented or prevented, and the film pieces are separated or floated from the material gas injector or the intermediate mesh plate electrode and are prevented or adhered to the substrate to be deposited. An insulating film or an interlayer insulating film can be formed.

When the film forming material is silicon oxide, polycrystalline silicon or amorphous silicon, the coefficient of thermal expansion of stainless steel is 14.7 × 10 ⁻⁶ / ° C., and the coefficient of thermal expansion of silicon oxide is 0. 4 to 1 × 10 ^-6 / ° C, 0.5 × silicon
Since the thermal expansion coefficient is 10 ⁻⁶ / ° C., the intermediate mesh plate electrode or the material gas injector is formed of a material whose thermal expansion coefficient difference is smaller than these differences, or the intermediate mesh plate electrode or the material gas is formed of these materials. What is necessary is just to cover an injector. Materials suitable for such coating include the following.

Material Thermal expansion coefficient (× 10 ⁻⁶ / ° C.) Quartz 0.4-0.55 Soda-lime glass 8-9 Titanium oxide 9 Alumina 8.3 Titanium 8.4 Silicon 5 Molybdenum 4.9 Tungsten 4.6 Tantalum 6.5 Of these materials, quartz and alumina are particularly excellent.

When preparing the intermediate mesh plate electrode and the material gas injector itself, among the above materials, soda-lime glass, titanium, molybdenum, tungsten,
Tantalum is suitable.

As a configuration of such a CVD apparatus,
Configurations such as (7) to (10) are conceivable. (7) The material gas injector is formed of a material in which the difference in thermal expansion coefficient between the material gas injector material and the film forming material is smaller than the difference in thermal expansion coefficient between stainless steel and the film forming material. (8) The material gas injector is coated with a material in which the difference in thermal expansion coefficient between the coating material of the material gas injector and the film forming material is smaller than the difference in thermal expansion coefficient between stainless steel and the film forming material. (9) The intermediate mesh plate electrode is formed of a material in which the difference in thermal expansion coefficient between the intermediate mesh plate electrode material and the film forming material is smaller than the difference in thermal expansion coefficient between stainless steel and the film forming material. (10) The intermediate mesh plate electrode is coated with a material in which the difference in thermal expansion coefficient between the coating material of the mesh plate and the film forming material is smaller than the difference in thermal expansion coefficient between stainless steel and the film forming material.

When the inert gas injector as described in (2) above is provided, the coefficient of thermal expansion between the inert gas injector and the film forming material is smaller than the difference between the coefficient of thermal expansion between stainless steel and the film forming material. Such a material can be used to coat the inert gas injector, or the inert gas injector can be made from such a material.

Other means for solving the above problems include the following. (11) The structure is such that the intermediate mesh plate electrode or the material gas injector can have a temperature of 100 ° C. or more so as to suppress the deposition of silicon oxide powdery particles on the intermediate mesh plate electrode or the material gas injector. It is characterized by:

In the above-mentioned intermediate mesh plate electrode or material gas injector, the surface temperature is 100
Since the temperature is kept at not less than ° C., the film adhering to the intermediate mesh plate electrode or the material gas injector becomes a dense film, and the adhesion of the particle-like film can be suppressed or prevented. Therefore, it is possible to suppress or prevent particles from floating from the intermediate mesh plate electrode or the material gas injector and adhere to the substrate to be deposited, and to form a gate insulating film or an interlayer insulating film of a defect-free MOS device. Become.

As a configuration of such a CVD apparatus, (1)
2) to (17) are possible. (12) The material gas injector includes a heating element. (13) The intermediate mesh plate electrode is configured to include the heating element. (14) The material gas injector is connected to the heating element. (15) The intermediate mesh plate electrode is connected to the heating element. (16) The material gas injector has a distance of 120 mm or less from the substrate installation-side electrode including the heater. (17) The distance between the intermediate mesh plate and the substrate installation-side electrode including the heater is 120 mm or less.

In the case where the inert gas injector has the inert gas injector as described in the above (2), the inert gas injector includes a heating element, is connected to the heating element, or has a heater. The object is achieved when the distance from the provided substrate installation side electrode is 120 mm or less.

Further, in the above-mentioned apparatus, the intermediate mesh plate electrode can be made square. In recent years, the size of a substrate has been increased, and the use of a conventional circular intermediate mesh plate has further increased the size of a plasma CVD apparatus. By making the intermediate mesh plate electrode square in accordance with the shape of the substrate, the size of the device can be reduced.

[0026]

An embodiment of the present invention will be described with reference to the drawings.

(Embodiment 1) A first embodiment of the present invention will be described in detail with reference to FIGS. 1 to 4, taking a silicon oxide film formation by parallel plate remote plasma CVD as an example. FIG. 1 is a schematic view of a parallel plate remote plasma CVD apparatus according to this embodiment, and shows a state of silicon oxide film formation. FIG. 2 is a bottom view of the ring-shaped gas injector of this device. FIG. 3 is a bottom view of the inert gas planar injector of the device. FIG. 4 is a sectional view of FIG.

As shown in FIG. 1, the parallel plate remote plasma CVD apparatus according to the present invention basically has a vacuum chamber capable of evacuating, a high-frequency application electrode 1 including a gas shower head, and a substrate-side counter electrode 2 including a heater. , An intermediate mesh plate electrode 11, a ring-shaped material gas injector 8, and a ring-shaped inert gas injector 23. FIG. 2 shows an example of the shape of the ring-shaped material gas injector 8. The shape of the ring-shaped inert gas injector 23 is the same as the shape of the ring-shaped material gas injector 8 in FIG. In addition, the mesh plate hole diameter of the intermediate mesh plate electrode 11 is approximately the same as the Debye length of the generated oxygen plasma so that the oxygen plasma generated between the intermediate mesh plate electrode 11 and the high-frequency application electrode 1 can be efficiently confined. It has become.

The method for forming the silicon oxide film is as follows.
In the evacuated CVD chamber, an oxygen gas 5 is introduced into the high-frequency application electrode 1 including the gas shower head, and a glow discharge is caused between the high-frequency application electrode 1 and the intermediate mesh plate electrode 11. The generated oxygen plasma 6 is applied to the high-frequency application electrode 1.
And between the intermediate mesh plate electrodes 11 efficiently. As a result, while the plasma density in the oxygen plasma 6 is about 10 ¹⁰ cm ⁻³ , the plasma density between the intermediate mesh plate electrode 11 and the substrate-side counter electrode 2 is 10 ⁵ to 10 ⁶ cm ^−3. It has become about.
Oxygen ions, electrons, and excited neutral oxygen radicals are present in the oxygen plasma. The oxygen ions and electrons are directed toward the substrate 3 by electric field and diffusion, and the oxygen radicals 7 are diffused by the diffusion. Head in the direction of. However, the flux of oxygen ions toward the substrate 3 is
Since it is outside the plasma, the flux is very small compared to the flux of oxygen radicals 7, and thus the contribution of oxygen radicals 7 is dominant in silicon oxide formation. The diffused oxygen radicals 7 react with the monosilane gas 9 injected from the material gas injector 8 to form the silicon oxide precursor 10 and form the silicon oxide film 4 on the substrate 3 to be deposited.

As described above, since the plasma density between the intermediate mesh plate electrode 11 and the substrate-side counter electrode 2 is very low, ordinary parallel plate plasma CVD is used.
The plasma damage to the deposition target substrate 3 is lower than that of the method. This effect is remarkable when the substrate surface is a silicon surface forming a MOS interface, and when an SiO ₂ film is formed on a single crystal silicon substrate by a normal parallel plate plasma CVD method, the MOS interface state density is reduced. While it is 10 ¹¹ to 10 ¹² cm ^-2 eV ^-1 near the mid gap,
When an SiO ₂ film is formed by a parallel plate remote plasma CVD method, the interface state density is as low as 10 ¹⁰ cm ⁻² eV ⁻¹ .

The feature of this embodiment is that the ring-shaped inert gas injector 2 that supplies an inert gas 24 such as helium gas between the intermediate mesh plate electrode 11 and the ring-shaped material gas injector 8 that supplies the monosilane gas 9.
3 is provided. When the inert gas 24 is supplied from the ring-shaped inert gas injector 23, the monosilane gas 9 supplied from the material gas injector 8
Is hardly diffused to the intermediate mesh plate electrode 11 side, and adhesion of particles of silicon oxide powder to the intermediate mesh plate electrode 11, which has conventionally been a problem, is prevented or suppressed. Further, the reaction between the monosilane gas 9 and the oxygen radicals 7 in the vicinity of the material gas injector 8 is suppressed due to the presence of the inert gas 24, so that the adhesion of the silicon oxide powdery particles to the material gas injector 8 is also prevented or suppressed. Is done. Here, the inert gas 24 may be a helium gas, other inert gas such as an argon gas or a neon gas, or a combination of these inert gases.

In the above embodiment, the inert gas injector 23 has a ring shape, but may be a flat injector as shown in FIG. 3 and 4 show a top view and a side view of the flat injector. When a planar injector is used, an oxygen radical passage hole 25 through which oxygen radicals and the like passing through the intermediate mesh plate electrode pass is provided. The oxygen radical passage hole 25 and the inert gas injection hole 28 are independent holes.

As described above, the inert gas injector in the above-described embodiment does not deviate from the gist of the present invention as long as the position of the gas injection hole is located between the intermediate mesh plate electrode and the material gas injector. so,
It can be shaped as needed.

(Embodiment 2) A second embodiment of the present invention will be described in detail with reference to FIGS. 5 to 7, taking a silicon oxide film formation by a parallel plate remote plasma CVD method as an example. FIG. 5 is a schematic view of a parallel plate remote plasma CVD apparatus according to the second embodiment, and shows a state of silicon oxide film formation. FIG. 6 is a bottom view of the intermediate mesh plate electrode of this device. FIG. 7 is a diagram illustrating an example of the oxygen radical passage hole of the intermediate mesh plate electrode.

As shown in FIG. 5, the parallel plate remote plasma CVD apparatus according to the present invention basically has a vacuum chamber capable of evacuating, a high-frequency application electrode 1 including a gas shower head, and a substrate-side counter electrode 2 including a heater. An intermediate mesh plate electrode 29 having an inert gas injection hole,
It is constituted by a ring-shaped material gas injector 8.

The method for forming the silicon oxide film is as follows.
In the evacuated CVD chamber, an oxygen gas 5 is introduced into the high-frequency application electrode 1 including the gas shower head, and an intermediate mesh plate electrode 29 having an inert gas injection hole is introduced.
A glow discharge is caused between them. Here, the diameter of the oxygen radical passage hole 30 of the intermediate mesh plate electrode 29 is
The oxygen plasma generated has a length substantially equal to the Debye length of the plasma in the generated oxygen plasma so as to efficiently confine the generated oxygen plasma with the high frequency application electrode 1 (FIG. 6). Radical 7 diffused through passage hole 30
Reacts with a monosilane gas 9 injected from a ring-shaped material gas injector 8 to form a silicon oxide precursor 10 and form a silicon oxide film 4 on the substrate 3 to be deposited.

As shown in FIG. 7, the oxygen radical passage hole 30 in the above embodiment has a mesh plate 32 or the like capable of confining the generated plasma in the hole 30 as shown in FIG. The diameter need not be a dimension for confining the plasma.

The feature of this embodiment is that the intermediate mesh plate electrode 29 has an inert gas injection hole 28 as shown in FIGS. When the inert gas 24 is injected from the inert gas injection holes 28, the monosilane gas 9 supplied from the material gas injector 8 becomes difficult to diffuse toward the intermediate mesh plate 29, and the intermediate mesh plate electrode, which has conventionally been a problem, Adhesion of silicon oxide powder particles to 29 is prevented or suppressed. Here, the inert gas 24 may be a helium gas, other inert gas such as an argon gas or a neon gas, or a combination of these inert gases.

(Embodiment 3) A third embodiment of the present invention will be described in detail with reference to FIGS. 8 to 10 by taking a silicon oxide film formation by parallel plate remote plasma CVD as an example. FIG. 8 is a schematic view of a parallel plate plasma CVD apparatus according to the third embodiment, and shows a state of silicon oxide film formation. FIG. 9 is a bottom view of the intermediate mesh plate electrode of this apparatus, and FIG. 10 is a sectional view of FIG.

As shown in FIG. 8, the parallel plate remote plasma CVD apparatus according to the present invention basically has a vacuum chamber capable of evacuating, a high-frequency application electrode 1 including a gas shower head, and a substrate-side counter electrode 2 including a heater. And an intermediate mesh plate electrode 26 having an oxygen radical passage hole, a monosilane injection hole, and an inert gas injection hole which can be confined in plasma on the same surface. Here, the intermediate mesh plate electrode 26 also functions as a material gas injector.

The method for forming the silicon oxide film is as follows.
In the evacuated CVD chamber, the oxygen gas 5 is introduced into the high frequency application electrode 1 including the gas shower head, and a glow discharge is caused between the high frequency application electrode 1 and the intermediate mesh plate electrode 26. Here, the diameter of the oxygen radical passage hole 30 of the intermediate mesh plate electrode 26 is set equal to the Debye length of the generated oxygen plasma so that the oxygen plasma generated between the intermediate mesh plate electrode 26 and the high-frequency application electrode 1 can be efficiently confined. It is about the same length. The radicals 7 diffused through the oxygen radical passage holes 30 react with the monosilane gas 9 injected from the monosilane injection holes 27 of the intermediate mesh plate electrode 26 to form a silicon oxide precursor 10 and oxidize on the substrate 3 to be deposited. A silicon film 4 is formed.

Incidentally, as shown in FIG. 7 of the second embodiment, the oxygen radical passage hole 30 in the above embodiment is
As long as a mesh plate 32 or the like capable of confining the generated plasma is provided in the hole 30, the diameter of the hole 30 may not be a dimension for confining the plasma.

The feature of this embodiment is that the intermediate mesh plate electrode 26 has an oxygen radical passage hole 30, a monosilane injection hole 27 and an inert gas injection hole 28 on the same surface as shown in FIGS. FIGS. 9 and 10
As shown in (1), the oxygen radical passage hole 30, the monosilane injection hole 27, and the inert gas injection hole 28 are independent of each other. Since the inert gas is present so as to surround each of the oxygen radical passage hole 28 and the monosilane passage hole 27, the reaction between the oxygen radical 7 and the monosilane 9 near the intermediate mesh plate electrode 26 is significantly suppressed. For this reason, adhesion of powdery silicon oxide particles to the intermediate mesh plate electrode and the gas injector, which has conventionally been a problem, is prevented or suppressed. Here, in addition to the helium gas, the inert gas 24 is an argon gas,
Other inert gases such as neon gas and combinations of these inert gases may be used.

(Embodiment 4) A fourth embodiment of the present invention will be described in detail with reference to FIGS. 11 and 12, taking a silicon oxide film formation by parallel plate remote plasma CVD as an example. FIG. 11 is a schematic view of a parallel plate remote plasma CVD apparatus according to the fourth embodiment, and shows a state of silicon oxide film formation. FIG. 12 is a bottom view of the flat injector of this device.

As shown in FIG. 11, the parallel plate remote plasma CVD apparatus of the present invention basically has a vacuum chamber capable of evacuating, a high-frequency application electrode 1 including a gas shower head, and a substrate-side counter electrode 2 including a heater. , An intermediate mesh plate electrode 11, an oxygen radical passage hole, a monosilane injection hole, and an inert gas injection hole on the same plane.

The method for forming the silicon oxide film is as follows.
In the evacuated CVD chamber, an oxygen gas 5 is introduced into the high-frequency application electrode 1 including the gas shower head, and a glow discharge is caused between the high-frequency application electrode 1 and the intermediate mesh plate electrode 11. The plasma confinement between the high-frequency application electrode 1 and the intermediate mesh plate electrode 11 is the same as in the first embodiment. The diffused oxygen radicals 7 pass through the oxygen radical passage holes 25 of the plane injector 31 and react with the monosilane gas 9 injected from the plane injector 31 to form a silicon oxide precursor 10. The film 4 is formed.

The feature of this embodiment is that, as shown in FIG. 11, an oxygen radical passage hole, a monosilane injection hole, and an inert gas injection hole are provided on the same surface between the intermediate mesh plate electrode 11 and the substrate-side counter electrode 2. That is, the flat injector 31 is provided, and the oxygen radical passage hole 25, the monosilane injection hole 27, and the inert gas injection hole 28 in the flat injector 31 are independently provided as shown in FIG. Since the inert gas is present so as to surround each of the oxygen radical passage hole 28 and the monosilane injection hole 27, the reaction between the oxygen radical 7 and the monosilane 9 near the plane injector 31 is significantly suppressed. Therefore, adhesion of silicon oxide powder particles to the gas injector, which has conventionally been a problem, is prevented or suppressed. In addition, since monosilane hardly diffuses to the plasma generation region side in the planar injector, adhesion of silicon oxide powder particles to the intermediate mesh plate electrode 11 is also prevented or suppressed. Here, the inert gas 24 may be a helium gas, other inert gas such as an argon gas or a neon gas, or a combination of these inert gases.

(Embodiment 5) A fifth embodiment of the present invention will be described in detail with reference to FIG.

The configuration of the parallel plate remote plasma CVD apparatus of the present invention is basically the same as that of the conventional parallel plate remote plasma CVD apparatus shown in FIG. 28 except for the material gas injector material. , The parallel plate remote plasma CVD device in the second embodiment, the parallel plate remote plasma CVD device in the fourth embodiment, and the like.

The feature of this embodiment lies in the material of the material gas injector for supplying a material gas such as monosilane.
The difference in thermal expansion coefficient between the material gas injector material and the film forming material is smaller than the difference in thermal expansion coefficient between stainless steel and the film forming material. When the film forming material is silicon oxide, quartz is suitable as the material as described above.
May be made of quartz.

FIG. 13 is a longitudinal sectional view of the quartz material gas injector 33 in this embodiment. The injector is made of quartz and has a monosilane gas injection hole 1
9 is opened. Even if the silicon oxide film adheres to the material gas injector and becomes thicker, the thermal expansion coefficient of the silicon oxide thick film 18 and the material gas injector 33 made of quartz are almost the same, so that cracks due to a thermal change do not occur. Therefore, peeling of the film piece from the material gas injector does not occur.

(Embodiment 6) A sixth embodiment of the present invention will be described in detail with reference to FIGS.

The configuration of the parallel plate remote plasma CVD apparatus according to this embodiment is the same as that of the fifth embodiment.

This embodiment is characterized in that the material gas injector that supplies a material gas such as monosilane is coated, and that the material to be coated is coated. And a material smaller than the difference in thermal expansion coefficient between the film forming materials.
When the film forming material is silicon oxide, quartz is suitable as the above-mentioned material. For example, the material gas injector 22 made of stainless steel in FIG. 28 may be covered with a silicon oxide film having a strong adhesive force.

FIG. 14 is a longitudinal sectional view of the material gas injector in this embodiment, and FIG. 15 is a radial sectional view of the material gas injector. The injector body is made of, for example, stainless steel 35, and the outer surface of the stainless steel is covered with silicon oxide having strong adhesive force. Examples of the coating method include forming a film on a stainless steel surface at a high temperature, or covering a stainless steel with a quartz processed product. By forming a desired monosilane gas injection hole 19 in the two-layer material, a material gas injector is obtained. Even if the silicon oxide film adheres to the material gas injector and becomes thicker, the thermal expansion coefficients of the silicon oxide thick film 18 and the silicon oxide film 34 are almost the same, so that cracks due to thermal change do not occur. Therefore, peeling of the film piece from the material gas injector does not occur.

(Embodiment 7) A seventh embodiment of the present invention will be described in detail with reference to FIG.

The configuration of the parallel plate remote plasma CVD apparatus according to the present embodiment is basically the same as the conventional parallel plate remote plasma CVD apparatus shown in FIG. 28 except for the intermediate mesh plate. Parallel plate remote plasma CVD device in the second embodiment, parallel plate remote plasma CVD device in the second embodiment,
Parallel plate remote plasma C in the third embodiment
The present invention can be applied to a VD apparatus, a parallel plate remote plasma CVD apparatus in the fourth embodiment, and the like.

The feature of this embodiment lies in the material of the intermediate mesh plate electrode for confining the plasma, and the difference in the thermal expansion coefficient between the intermediate mesh plate electrode material and the film forming material is as follows.
The material is smaller than the difference in thermal expansion coefficient between stainless steel and the film forming material. When the film forming material is silicon oxide, quartz is suitable as the above-mentioned material, and for example, the intermediate mesh plate electrode 11 in FIG. 28 may be made of quartz.

FIG. 16 is a sectional view of an intermediate mesh plate electrode in this embodiment. The intermediate mesh plate electrode 42 is made of quartz, and is provided with an oxygen radical passage hole 30 having a structure capable of confining oxygen plasma. The oxygen radical passage hole 30 having a structure capable of confining oxygen plasma has a mesh plate having a passage hole having a diameter similar to the Debye length of generated plasma or a hole having a size similar to the Debye length of generated plasma. And the like.

Even if a silicon oxide film adheres to this intermediate mesh plate electrode and becomes thick, the silicon oxide thick film 18
And the intermediate mesh plate electrode 42 made of quartz have substantially the same thermal expansion coefficient, so that cracks and the like due to thermal change do not occur. Therefore, peeling of the film piece from the quartz intermediate mesh plate electrode 42 does not occur.

(Eighth Embodiment) An eighth embodiment of the present invention will be described in detail with reference to FIG.

The configuration of the parallel plate remote plasma CVD apparatus of this embodiment is basically the same as that of the conventional parallel plate remote plasma CVD apparatus shown in FIG. 28 except for the intermediate mesh plate. Parallel plate remote plasma CVD device in the second embodiment, parallel plate remote plasma CVD device in the second embodiment,
Parallel plate remote plasma C in the third embodiment
The present invention can be applied to a VD apparatus, a parallel plate remote plasma CVD apparatus in the fourth embodiment, and the like.

The feature of this embodiment lies in the coating of the intermediate mesh plate electrode for plasma confinement and the material to be coated. The difference between the thermal expansion coefficient of the intermediate mesh plate coating material and that of the film forming material is different from that of stainless steel. The material is smaller than the difference in thermal expansion coefficient between the film materials. When the film forming material is silicon oxide, quartz is suitable as the above-mentioned material. For example, the intermediate mesh plate electrode 11 in FIG. 28 may be covered with a silicon oxide film having a strong adhesive force.

FIG. 17 is a sectional view of an intermediate mesh plate electrode in this embodiment. The intermediate mesh plate main body is made of, for example, stainless steel 35, and at least the surface of the stainless steel surface on the material gas injector side is covered with a silicon oxide film having a strong adhesive force. The silicon oxide film with strong adhesion is formed by high temperature CVD or high pressure CVD.
It can be formed by a method. The coating may be performed on the entire surface of the stainless steel. However, when only the surface on the material gas injector side is coated, stable plasma confinement can be performed. Examples of the coating method include forming a film on a stainless steel surface and covering a stainless steel with a quartz processed product. By providing an oxygen radical passage hole 30 having a structure capable of confining oxygen plasma in this two-layer material, an intermediate mesh plate electrode is obtained. The oxygen radical passage hole 30 having a structure capable of confining oxygen plasma has a mesh plate having a passage hole having a diameter similar to the Debye length of generated plasma or a hole having a size similar to the Debye length of generated plasma. And the like.

Even if a silicon oxide film adheres to the intermediate mesh plate electrode and becomes thick, the silicon oxide thick film 18
Since the thermal expansion coefficients of the silicon oxide film 34 and the silicon oxide film 34 are substantially the same, no crack or the like due to a thermal change occurs. Therefore, peeling of the film piece from the quartz intermediate mesh plate electrode 42 does not occur.

(Embodiment 9) A ninth embodiment of the present invention will be described in detail with reference to FIGS.

The configuration of the parallel plate remote plasma CVD apparatus according to the present embodiment is basically the same as the conventional parallel plate remote plasma CVD apparatus shown in FIG. 28 except for the material gas injector. Parallel plate remote plasma CVD device in the second embodiment, parallel plate remote plasma CVD device in the second embodiment,
Parallel plate remote plasma C in the third embodiment
The present invention can be applied to a VD apparatus, a parallel plate remote plasma CVD apparatus in the fourth embodiment, and the like.

The feature of the present embodiment is that the material gas injector includes a heating element.

FIGS. 18 to 20 show examples of a material gas injector including a heating element, and show radial sectional views in the case of a tubular gas injector, respectively.

The gas injector shown in FIG. 18 is composed of stainless steel 35 and boron nitride ceramics 36 / graphite 37 /
A three-layer ceramic heater made of boron nitride ceramics 36 is coated, and the outermost surface is coated with silicon oxide 34 to prevent contamination. The ceramics heater utilizes heat generated by energizing graphite, and the boron nitride ceramics 36 plays a role of electrical insulation. Since the boron nitride ceramics 36 and the graphite 37 can be formed by a high-temperature chemical vapor deposition method (CVD method),
Formation on a tubular gas injector as shown is also possible. In FIG. 18, the stainless steel 35 may be another material such as quartz, and the silicon oxide film 34 may not be provided. Further, there is no limitation on the material of the heater, and any heater can be used as long as it can be formed by covering the injector.

The gas injector shown in FIG. 19 is basically a tubular gas injector in which a silicon oxide film 34 is applied to a stainless steel 35, and has a rod-shaped heater 38 in the tube. Examples of the rod-shaped heater 38 include a magnesium oxide insulating sheath type flexible micro heater. Since the micro heater can be manufactured with a diameter of about 1 mm, it is suitable for the structure of FIG. In FIG. 19, the stainless steel 35 may be made of another material such as quartz, and the silicon oxide film 34 may not be provided. There is no limitation on the material or structure of the heater, and any heater may be used as long as it is a rod-shaped heater having a diameter smaller than the pipe diameter so that the heater can be installed in the injector pipe.

The gas injector shown in FIG. 20 is basically a tubular gas injector in which a stainless steel 35 is coated with a silicon oxide film 34, and has a rod-shaped heater 38 on the outer surface of the tube. The configuration of the rod-shaped heater 38 is the same as the example in FIG. In FIG. 20, the stainless steel 35 may be made of another material such as quartz, and the silicon oxide film 34 may not be provided. There is no restriction on the material or structure of the heater.

Although only the tubular gas injector has been described in the above example, the present invention can be applied to a flat plate-shaped gas injector as shown in the third and fourth embodiments.

As described above, by configuring the gas injector including the heating element, the surface temperature of the gas injector can be kept high. When the silicon oxide film is formed without heating the injector, the reaction near the monosilane gas injector is fast and the temperature is low, so the silicon oxide powder particles adhere to the material gas injector and the adhesion is weak. However, if the particles are heated to about 100 ° C., the particles become very fine particles, and the adhesive force increases. And one more
When the material gas injector is heated to about 50 to 200 ° C., film-like silicon oxide adheres to the material gas injector, and the particles do not float.

(Embodiment 10) A tenth embodiment of the present invention will be described in detail with reference to FIGS.

The configuration of the parallel plate remote plasma CVD apparatus of this embodiment is basically the same as that of the conventional parallel plate remote plasma CVD apparatus shown in FIG. 28 except for the intermediate mesh plate electrode. Parallel plate remote plasma CVD apparatus according to the embodiment, parallel plate remote plasma CVD apparatus according to the second embodiment, parallel plate remote plasma CVD apparatus according to the third embodiment, and parallel plate remote plasma CVD apparatus according to the fourth embodiment It can also be applied to

The feature of this embodiment is that the intermediate mesh plate electrode is configured to include a heating element.

FIGS. 21 and 22 show examples of an intermediate mesh plate electrode including a heating element, and show respective sectional views.

The intermediate mesh plate electrode shown in FIG. 21 is formed by coating a stainless steel 35 with a three-layer ceramic heater of boron nitride ceramics 36 / graphite 37 / boron nitride ceramics 36, and furthermore, silicon oxide 34 on the outermost surface to prevent contamination. Coated. In FIG. 21, the reason why the plasma generation region is not covered with the heater and the silicon oxide is to stabilize the plasma, and both surfaces may be covered with the heater and the silicon oxide. Since boron nitride ceramics 36 and graphite 37 can be formed by high temperature chemical vapor deposition (CVD), they have the advantage that heaters of various structures can be formed. In FIG. 21, the silicon oxide film 34 may not be provided, and there is no limitation on the heater material, as long as the heater can be formed by covering the intermediate mesh plate electrode.

In the intermediate mesh plate electrode shown in FIG. 22, a rod-shaped heater is formed in a net shape, and the heater itself functions to confine plasma. Bar heater 38
Examples thereof include a magnesium oxide insulating sheath type flexible micro heater. Since the micro heater can be manufactured with a diameter of about 1 mm and has high flexibility, it is suitable for the structure shown in FIG.
The hole diameter of the mesh plate formed by the rod-shaped heater is approximately the same as the Debye length of the generated plasma, and the plasma can be efficiently confined. There is no limitation on the material or structure of the rod-shaped heater 38, and any rod-shaped heater may be used as long as it can perform both functions of confining plasma and generating heat.

As described above, by configuring the intermediate mesh plate electrode including the heating element, the surface temperature of the intermediate mesh plate electrode can be kept high. When a silicon oxide film is formed without heating the intermediate mesh plate electrode, powdered silicon oxide particles adhere to the intermediate mesh plate electrode due to the diffused monosilane gas, and the adhesive force is weak, so that the silicon oxide film is formed in the chamber. It floats. Here, the intermediate mesh plate electrode is set to 100
When heated to about ℃, it becomes very fine particles,
Adhesion also increases. Further heating to about 150 to 200 [deg.] C. causes the film-like silicon oxide to adhere to the intermediate mesh plate electrode and eliminates particle floating.

(Embodiment 11) An eleventh embodiment of the present invention will be described in detail with reference to FIGS.

The configuration of the parallel plate remote plasma CVD apparatus according to the present invention is basically the same as that of the conventional parallel plate remote plasma CVD apparatus shown in FIG. 28 except for the material gas injector and its related parts. Parallel plate remote plasma CVD apparatus in the embodiment,
Parallel plate remote plasma C according to the second embodiment
The present invention can be applied to a VD apparatus, a parallel plate remote plasma CVD apparatus according to the third embodiment, a parallel plate remote plasma CVD apparatus according to the fourth embodiment, and the like.

A feature of the present invention is that the material gas injector is connected to the heating element.

FIGS. 23 and 24 show examples of a material gas injector connected to a heating element. FIG. 23 shows the position of the heating element in a schematic cross-sectional view of a remote plasma CVD apparatus, and FIG. 24 shows a ring-shaped material gas injector. FIG. 3 shows a schematic diagram when viewed from the lower surface of the apparatus. As a heating element,
Any heater, such as a sheath heater or a ceramic heater, may be used as long as it can generate heat of about 200 ° C. and suppresses chamber contamination from the heating element.

As shown in FIGS. 23 and 24, since the heating element 39 is connected to the material gas injector at a position other than the main function part of the material gas injector 8, the material gas injector has a structure including at least metal. It is necessary that the heating element 39 be in contact with the metal. When the heating element 39 is connected to the metal, heat is conducted to the entire material gas injector via the metal. By disposing the heating element at a position other than the main function part of the gas injector, there is an advantage that the function as CVD is not restricted at all.

As described above, by connecting the gas injector to the heating element, the temperature of the gas injector can be kept high. When the silicon oxide film is formed without heating the injector, the reaction near the monosilane gas injector is fast and the temperature is low, so the silicon oxide powder particles adhere to the material gas injector and the adhesion is weak. However, if the particles are heated to about 100 ° C., the particles become very fine particles, and the adhesive force increases. And further 150-20
If the material gas injector is heated to about 0 ° C., film-like silicon oxide will adhere to the material gas injector, and particles will not float.

(Embodiment 12) A twelfth embodiment of the present invention will be described in detail with reference to FIGS.

The configuration of the parallel plate remote plasma CVD apparatus of this embodiment is basically the same as that of the conventional parallel plate remote plasma CVD apparatus shown in FIG. 28 except for the intermediate mesh plate electrode and its related parts. Parallel plate remote plasma CV according to one embodiment
The present invention can be applied to a D apparatus, a parallel plate remote plasma CVD apparatus according to the second embodiment, a parallel plate remote plasma CVD apparatus according to the third embodiment, a parallel plate remote plasma CVD apparatus according to the fourth embodiment, and the like.

The feature of this embodiment is that the intermediate mesh plate electrode is connected to the heating element.

FIGS. 25 and 26 show examples of the intermediate mesh plate electrode connected to the heating element. FIG. 25 shows the position of the heating element in the schematic cross-sectional view of the remote plasma CVD apparatus, and FIG. 26 shows the intermediate mesh plate electrode. FIG. 3 shows a schematic diagram when viewed from the lower surface of the apparatus. As the heating element, 2
Such a heater such as a sheath heater or a ceramic heater may be used as long as it can generate heat of about 00 ° C. and suppresses chamber contamination from the heating element.

As shown in FIGS. 25 and 26, since the heating element 39 is connected to the material gas injector at a position other than the main function part of the intermediate mesh plate electrode 11,
The intermediate mesh plate electrode has a structure including at least a metal, and the heating element 39 needs to be in contact with the metal. When the heating element 39 is connected to the metal, heat is conducted to the entire mesh plate. In the example of FIG. 26, the heating element 39 is connected to the entire outer periphery of the mesh plate 11, but may be partially connected. By providing the heating element at a position other than the main function part of the intermediate mesh plate electrode, there is an advantage that the function as CVD is not restricted at all.

As described above, by connecting the intermediate mesh plate electrode to the heating element, the temperature of the intermediate mesh plate electrode can be maintained at, for example, 100 ° C. or 200 ° C. When a silicon oxide film is formed without heating the intermediate mesh plate electrode, powdered silicon oxide particles adhere to the intermediate mesh plate electrode due to the diffused monosilane gas, and the adhesive force is weak, so that the silicon oxide film is formed in the chamber. It floats. Here, if the intermediate mesh plate electrode is heated to about 100 ° C., it becomes very fine particles, and the adhesive force becomes strong. Further 150 ~
When heating to about 200 ° C., the film-like silicon oxide adheres to the intermediate mesh plate electrode, and the particles do not float.

(Thirteenth Embodiment) A thirteenth embodiment of the present invention will be described in detail with reference to FIG.

The configuration of the parallel plate remote plasma CVD apparatus in this embodiment is basically the same as the conventional parallel plate remote plasma CVD apparatus shown in FIG.
Parallel plate remote plasma C according to the first embodiment
The present invention can be applied to a VD device, a parallel plate remote plasma CVD device in the second embodiment, a parallel plate remote plasma CVD device in the third embodiment, a parallel plate remote plasma CVD device in the fourth embodiment, and the like.

The feature of the present embodiment is that the distance between the substrate-side counter electrode including the heater and the material gas injector and the distance between the substrate-side counter electrode including the heater and the intermediate mesh plate electrode are set to be equal to or smaller than the specified distance.

FIG. 27 shows the distance between the substrate-side counter electrode 2 including a heater and the material gas injector 8 and the substrate-side counter electrode 2 including a heater and the intermediate mesh plate electrode 11 in a basic parallel plate remote plasma CVD apparatus.
Of the distance.

The distance 40 between the substrate-side counter electrode 2 including the heater and the material gas injector 8 and the distance 41 between the substrate-side counter electrode 2 including the heater and the intermediate mesh plate electrode 11 shown in FIG. The electrode 2 is easily heated by the influence of radiant heat from the heater and conduction heat. Further, the higher the pressure in the chamber and the higher the temperature of the heater of the substrate-side counter electrode 2, the easier it is to heat. A typical plasma CVD method has a pressure of 13 to 130 Pa and a heater temperature of 200 to 350 ° C. Within this range, the material gas injector or the intermediate mesh plate electrode is most easily heated at a pressure of 130 Pa and a heater temperature of 350 Pa.
Temperature, the most difficult to heat is pressure 13Pa,
The condition is a heater temperature of 200 ° C. In order to set the temperature of the material gas injector 8 or the intermediate mesh plate electrode 11 to 100 ° C. or more under the former condition, the distance 40 or the distance 41 may be 0 to 120 mm. In order to set the temperature of the material gas injector 8 or the intermediate mesh plate electrode 11 to 100 ° C. or more under the latter condition, the distance 40 or the distance 41 may be 0 to 60 mm.

As described above, the distance between the material gas injector 8 and the intermediate mesh plate electrode 11 and the substrate-side counter electrode 2 including the heater is set to a specified distance or less, and the radiant heat and conduction heat of the heater of the substrate-side counter electrode 2 are used. Allows the material gas injector 8 without adding a special structure.
In addition, the intermediate mesh plate electrode 11 can be kept at a high temperature.

When the silicon oxide film is formed without heating the material gas injector and the intermediate mesh plate electrode, silicon oxide powder particles adhere to the material gas injector and the intermediate mesh plate electrode,
It floats in the chamber due to weak adhesion. However, if the material gas injector and the intermediate mesh plate electrode are heated to about 100 ° C., very fine particles or film-like silicon oxide are formed, and the adhesion becomes strong, so that the particle floating is drastically reduced.

In the above embodiments, the present invention has been described with reference to the example of forming a silicon oxide film using monosilane and oxygen. However, instead of monosilane, higher-order silane such as disilane or TEOS (tetraethoxysilane) is used.
liquid Si raw material such as lane, or nitrous oxide, nitric oxide or the like may be used instead of oxygen.

In the embodiments of the present invention, the formation of a silicon oxide film has been described as an example. However, the formation of a silicon nitride film by the reaction of monosilane and ammonia, the formation of an amorphous silicon film by the decomposition of monosilane, and the like are also described. The same effect can be obtained for the plasma CVD film formation of the above material.

Further, in all the embodiments, an example using a parallel plate remote plasma CVD apparatus has been described. However, the present invention relates to a plasma separation apparatus having a plurality of holes provided between a plasma generation chamber and a substrate processing chamber. Plasma CVD apparatus having an intermediate mesh plate electrode for plasma CV using microwave plasma, electron cyclotron resonance plasma, inductively coupled plasma, helicon wave plasma
The present invention is applicable to any type of device such as the D device.

[0104]

According to the present invention, adhesion of powdery silicon oxide particles to the material gas injector and the intermediate mesh plate electrode is prevented or suppressed, and peeling of a film piece from the material gas injector and the intermediate mesh plate electrode is prevented. Alternatively, the adhesion of the silicon oxide powder particles to the substrate and the adhesion of the silicon oxide film pieces to the substrate are prevented or suppressed, and the MOS
A silicon oxide film suitable for a gate insulating film or an interlayer insulating film of an element can be formed.

[Brief description of the drawings]

FIG. 1 is a schematic view of a parallel plate remote plasma CVD apparatus according to a first embodiment of the present invention.

FIG. 2 is a bottom view of a ring-shaped gas injector of the parallel plate remote plasma CVD apparatus according to the first embodiment of the present invention.

FIG. 3 is a bottom view of an inert gas planar injector of the parallel plate remote plasma CVD apparatus according to the first embodiment of the present invention.

FIG. 4 is a side sectional view of an inert gas planar injector of the parallel plate remote plasma CVD apparatus according to the first embodiment of the present invention.

FIG. 5 is a schematic view of a parallel plate remote plasma CVD apparatus according to a second embodiment of the present invention.

FIG. 6 is a bottom view of an intermediate mesh plate electrode of a parallel plate remote plasma CVD apparatus according to a second embodiment of the present invention.

FIG. 7 is a view showing an example of an oxygen radical passage hole of an intermediate mesh plate electrode in a parallel plate remote plasma CVD apparatus according to a second embodiment of the present invention.

FIG. 8 is a schematic view of a parallel plate remote plasma CVD apparatus according to a third embodiment of the present invention.

FIG. 9 is a bottom view of an intermediate mesh plate electrode of a parallel plate remote plasma CVD apparatus according to a third embodiment of the present invention.

FIG. 10 is a side sectional view of an intermediate mesh plate electrode of a parallel plate remote plasma CVD apparatus according to a third embodiment of the present invention.

FIG. 11 is a schematic view of a parallel plate remote plasma CVD apparatus according to a fourth embodiment of the present invention.

FIG. 12 is a bottom view of a flat injector of a parallel plate remote plasma CVD apparatus according to a fourth embodiment of the present invention.

FIG. 13 is a longitudinal sectional view of a material gas injector of a parallel plate remote plasma CVD apparatus according to a fifth embodiment of the present invention.

FIG. 14 is a longitudinal sectional view of a material gas injector of a parallel plate remote plasma CVD apparatus according to a sixth embodiment of the present invention.

FIG. 15 is a radial cross-sectional view of a material gas injector of a parallel plate remote plasma CVD apparatus according to a sixth embodiment of the present invention.

FIG. 16 is a sectional view of an intermediate mesh plate electrode of a parallel plate remote plasma CVD apparatus according to a seventh embodiment of the present invention.

FIG. 17 is a sectional view of an intermediate mesh plate electrode of a parallel plate remote plasma CVD apparatus according to an eighth embodiment of the present invention.

FIG. 18 is a radial cross-sectional view of a first example of a material gas injector of a parallel plate remote plasma CVD apparatus according to a ninth embodiment of the present invention.

FIG. 19 is a radial cross-sectional view of a second example of the material gas injector of the parallel plate remote plasma CVD apparatus according to the ninth embodiment of the present invention.

FIG. 20 is a radial cross-sectional view of a third example of the material gas injector of the parallel plate remote plasma CVD apparatus according to the ninth embodiment of the present invention.

FIG. 21 is a cross-sectional view of a first example of an intermediate mesh plate electrode in a parallel plate remote plasma CVD apparatus according to a tenth embodiment of the present invention.

FIG. 22 is a sectional view of a second example of an intermediate mesh plate electrode in the parallel plate remote plasma CVD apparatus according to the tenth embodiment of the present invention.

FIG. 23 is a schematic view of a parallel plate remote plasma CVD apparatus according to an eleventh embodiment of the present invention.

FIG. 24 is a diagram showing a bottom view of a material gas injector and an intermediate mesh plate electrode in a parallel plate remote plasma CVD apparatus according to an eleventh embodiment of the present invention.

FIG. 25 is a schematic view of a parallel plate remote plasma CVD apparatus according to a twelfth embodiment of the present invention.

FIG. 26 is a diagram showing a bottom view of an intermediate mesh plate electrode together with a material gas injector in a parallel plate remote plasma CVD apparatus according to a twelfth embodiment of the present invention.

FIG. 27 is a schematic diagram of a parallel plate remote plasma CVD apparatus showing a relationship between a material gas injector, an intermediate mesh plate electrode, and a substrate-side counter electrode including a heater in the thirteenth embodiment and the thirteenth embodiment of the present invention. FIG.

FIG. 28 is a schematic view of a conventional parallel plate remote plasma CVD apparatus.

FIG. 29 is a schematic view of a conventional material gas injector.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 High frequency application electrode including a gas shower head 2 Substrate side counter electrode including a heater 3 Substrate to be deposited 4 Silicon oxide film 5 Oxygen gas 6 Oxygen plasma 7 Oxygen radical 8 Ring-shaped material gas injector 9 Monosilane gas 10 Silicon oxide precursor 11 Intermediate mesh Plate electrode 12 Silicon oxide powder particles 13 Floating silicon oxide powder particles 14 Silicon oxide powder particles adhering to the substrate to be deposited 15 Vacuum exhaust port 16 Chamber wall 17 Crack due to thermal expansion 18 Silicon oxide thick film 19 Monosilane gas injection hole 20 Film stripping 21 Silicon oxide stripping film piece 22 Stainless steel material gas injector 23 Ring-shaped inert gas injector 24 Inert gas 25 Oxygen radical passage hole 26 Plasma-confined oxygen radical passage Intermediate mesh plate electrode having holes, monosilane injection holes and inert gas injection holes on the same surface 27 Monosilane injection holes 28 Inert gas injection holes 29 Intermediate mesh plate electrode having inert gas injection holes 30 Passage of oxygen radicals capable of confining plasma Holes 31 Planar injector having oxygen radical passage holes, monosilane injection holes, and inert gas injection holes on the same surface 32 Mesh plate in oxygen radical passage holes capable of confining plasma 33 Material gas injector made of quartz 34 Silicon oxide film 35 Stainless steel 36 Boron nitride ceramics 37 Graphite 38 Bar heater 39 Heating element 40 Distance between material gas injector and substrate installation side electrode provided with heater 41 Intermediate mesh plate electrode and substrate installation side electrode provided with heater Distance 42 quartz intermediate mesh plate electrodes

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 21/31 C23C 16/455 C23C 16/509 H01L 21/205

Claims (21)

(57) [Claims] 1. A remote plasma CVD apparatus having an intermediate mesh plate electrode for plasma separation provided with a plurality of holes between a plasma generation chamber and a substrate processing chamber.
A plasma CV having a mechanism for suppressing a reaction between radicals passing through the intermediate mesh plate electrode and a material gas in the vicinity of the intermediate mesh plate electrode.
D device. 2. An intermediate mesh plate electrode for plasma separation having a plurality of holes provided between a plasma generation chamber and a substrate processing chamber, and a material gas injector is provided between the intermediate mesh plate electrode and the substrate. remote in the plasma CVD apparatus, wherein the intermediate mesh plate electrodes of the radicals and the material gas which has passed through the plasma CVD apparatus characterized by having a mechanism of inhibiting reaction with the material gas injector near with. 3. An intermediate mesh plate electrode for plasma separation provided with a plurality of holes between a plasma generation chamber and a substrate processing chamber, and a material gas injector is provided between the intermediate mesh plate electrode and the substrate. remote in the plasma CVD apparatus, a plasma CVD apparatus characterized by comprising an inert gas injector between said intermediate mesh plate electrode and the material gas injector having. 4. An intermediate mesh plate electrode for plasma separation provided with a plurality of holes between a plasma generation chamber and a substrate processing chamber, and a material gas injector is provided between the intermediate mesh plate electrode and the substrate. in the remote plasma CVD apparatus having the intermediate mesh plate electrodes, and a hole for passing the radicals generated in the plasma generation region, the plasma CVD apparatus characterized by having a hole for injecting an inert gas. 5. A remote plasma CVD apparatus having a plasma separation intermediate mesh plate electrode provided with a plurality of holes between a plasma generation chamber and a substrate processing chamber.
A plasma CVD apparatus, wherein the intermediate mesh plate electrode has a hole through which radicals generated in a plasma generation region pass, a hole through which a material gas is injected, and a hole through which an inert gas is injected. 6. An intermediate mesh plate electrode for plasma separation provided with a plurality of holes between a plasma generation chamber and a substrate processing chamber, and a gas injector between the intermediate mesh plate electrode and the substrate. Remote plasma CV
The plasma CVD apparatus according to claim D, wherein the gas injector has a hole through which radicals generated in a plasma generation region pass, a hole through which a material gas is injected, and a hole through which an inert gas is injected. 7. An intermediate mesh plate electrode for plasma separation provided with a plurality of holes between a plasma generation chamber and a substrate processing chamber, and a material gas injector is provided between the intermediate mesh plate electrode and the substrate. In the plasma CVD apparatus, the material gas injector is formed of a material in which a difference in thermal expansion coefficient between the material gas injector material and the film forming material is smaller than a difference in thermal expansion coefficient between stainless steel and the film forming material. Plasma CVD apparatus. 8. An intermediate mesh plate electrode for plasma separation provided with a plurality of holes between a plasma generation chamber and a substrate processing chamber, and a material gas injector is provided between the intermediate mesh plate electrode and the substrate. The material gas injector is coated with a coating material, and a difference in thermal expansion coefficient between the coating material and the film forming material is smaller than a difference in thermal expansion coefficient between stainless steel and the film forming material. A plasma CVD apparatus characterized by being coated. 9. A plasma separation intermediate mesh plate electrode provided with a plurality of holes between a plasma generation chamber and a substrate processing chamber, and a material gas injector is provided between the intermediate mesh plate electrode and the substrate. In the plasma CVD apparatus having, the intermediate mesh plate electrode has a difference in thermal expansion coefficient between the intermediate mesh plate electrode material and the film forming material,
A plasma CVD apparatus comprising a material having a smaller thermal expansion coefficient difference between stainless steel and a film forming material. 10. A plasma separation intermediate mesh plate electrode having a plurality of holes provided between a plasma generation chamber and a substrate processing chamber, and a material gas injector is provided between the intermediate mesh plate electrode and the substrate. Having plasma CVD
In the apparatus, the intermediate mesh plate electrode is coated with a coating material, and the thermal expansion coefficient difference between the coating material and the film forming material is coated with a material smaller than the thermal expansion coefficient difference between stainless steel and the film forming material. A plasma CVD apparatus characterized in that: 11. The plasma CVD apparatus according to claim 3, wherein at least a difference between the thermal expansion coefficient of the material on the surface of the inert gas injector and that of the film forming material is smaller than that of stainless steel and the film forming material. Characteristic plasma CVD apparatus. 12. The method according to claim 12, wherein said intermediate mesh plate electrode is 100
The plasma CVD apparatus according to any one of claims 3 to 6, wherein the apparatus has a structure capable of having a temperature of not less than ° C. 13. The plasma CVD according to claim 3, wherein the material gas injector has a structure capable of having a temperature of 100 ° C. or more. apparatus. 14. The material gas injector, claims 3 to 6, characterized in that it is configured to include a heating element
The plasma CVD apparatus according to any one of the above . 15. The method of claim 14, wherein the intermediate mesh plate electrodes, according to claim 3乃, characterized in that it is configured to include a heating element
7. The plasma CVD apparatus according to any one of items 6 to 6 . 16. The material gas injector, claim 3, 4, 6 Neu, characterized in that it is connected to the heating element
2. The plasma CVD apparatus according to claim 1. 17. The method according to claim 3, wherein said intermediate mesh plate electrode is connected to a heating element .
The plasma CVD apparatus according to claim 1. 18. The plasma CVD apparatus according to claim 3, wherein said material gas injector has a structure capable of having a temperature of 100 ° C. or higher. 19. The material gas injectors are all paddle one of claims 3, 4 and 6 where the distance between the substrate holding side electrode comprises a heater and wherein the at 120mm or less
3. The plasma CVD apparatus according to 1. 20. An intermediate mesh plate electrode for plasma separation provided with a plurality of holes between a plasma generation chamber and a substrate processing chamber, and a material gas injector is provided between the intermediate mesh plate electrode and the substrate. Having plasma CVD
The plasma CVD apparatus according to any one of claims 3 to 6, wherein a distance between an intermediate mesh plate of the apparatus and a substrate installation side electrode having a heater is 120 mm or less. 21. The method according to claim 1, wherein the shape of the intermediate mesh plate electrode is quadrangular .
Item 2. The plasma CVD apparatus according to item 1 .