WO2002024570A1 - Systemes micro electro-mecaniques - Google Patents
Systemes micro electro-mecaniques Download PDFInfo
- Publication number
- WO2002024570A1 WO2002024570A1 PCT/GB2001/004271 GB0104271W WO0224570A1 WO 2002024570 A1 WO2002024570 A1 WO 2002024570A1 GB 0104271 W GB0104271 W GB 0104271W WO 0224570 A1 WO0224570 A1 WO 0224570A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- wafers
- layers
- material layers
- layer
- optical
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/0841—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting element being moved or deformed by electrostatic means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/04—Optical MEMS
- B81B2201/047—Optical MEMS not provided for in B81B2201/042 - B81B2201/045
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/019—Bonding or gluing multiple substrate layers
Definitions
- This invention relates to micro electro-mechanical systems (MEMS) and more particularly to a method of fabricating such devices. More especially, although not exclusively, the invention concerns a tuneable optical filter for use in wavelength division multiplex (WDM) optical telecommunications system and a method for making the same.
- MEMS micro electro-mechanical systems
- WDM wavelength division multiplex
- MEMS are becoming more complex, particularly where such devices also contain an optical function (MOEMS) such as for example micro-machined tiltable mirrors for use in optical cross connects in optical telecommunications, wavelength tuneable filters in the form of single etalon structures for selecting wavelength channels within wavelength division multiplex (WDM) optical signals, optical switches and variable optical attenuators for use in WDM optical telecommunications systems to name but a few examples.
- MOEMS optical function
- MOEMS optical function
- the tolerances on dimensions, flatness, positional accuracy and parallelism of optical surfaces are crucial to the performance of the device.
- To accommodate the increasing complexity of these systems it is becoming necessary to fabricate the device from a number of wafers which are micro-machined and joined to form a layered assembly.
- the cavities, or spaces, within or between the layers may need to be of the order of a few microns and up to 1 mm but with a tolerance that might be of the order of nanometres.
- Such accurate spaces over these relatively large dimensions cannot be easily defined using conventional spacing techniques like glue preforms or solder bonds. Neither can they be achieved by the deposition of materials by evaporation, sputtering or electroplating, which are either only capable of thickness' of a few microns or impossible to control with sufficient accuracy in greater thickness'.
- MOEMS are fabricated using silicon micro-machining to provide the selected gaps between various thin film materials.
- silicon micro-machining multiple layers of different materials are selectively deposited onto a flat substrate, such as a silicon wafer, such that the gaps separating each material are defined by the thickness of the intervening material.
- one or more of the intervening materials can be selectively removed (typically by chemical etching) to create an air gap of a distance defined by the removed material.
- the membranes are required to be of exceptional flatness (sub nanometre) and to be aligned with exceptional parallelism relative to one another such that the gap can be adjusted with sub nanometre control by, for example, the application of an electrostatic or piezoelectric force.
- an SOI wafer comprises a first layer of silicon, often termed handle layer, for handling the wafer during processing, an insulating layer, most often an oxide such as silicon dioxide, which acts as a buried etch stop when the wafer is used in the fabrication of a MEMS (rather than providing an electrically insulating layer as required in the fabrication of semiconductor devices) and a further silicon layer usually termed a device layer in which the device is formed.
- SOI silicon on insulator
- SOI wafers There are several methods of fabricating SOI wafers. One of the most common is to join two silicon wafers together in which one of the wafers is coated with silicon dioxide. Fusing of the wafers is achieved by firstly ensuring that both wafers are exceptionally flat and then pressing them together while being heated to an elevated temperature. This results, in a continuous bond between the silicon oxide coated silicon wafer and the pure silicon wafer. The silicon on one side of the silicon oxide barrier is then lapped and polished away to leave a thin layer ( ⁇ 2 ⁇ m - 100 ⁇ m) on one side (device layer) and a relatively thick layer on the other (handle layer).
- SOI wafers have the advantage that the individual silicon layers are single crystal and substantially free of stress and that they may be readily etched in either a liquid or vapour, which has a high specificity for the silicon but very poor etching rate of the silicon oxide. Similarly the silicon oxide can be etched with chemical constituents which have a very poor etch rate for pure silicon. By careful use of photolithographic masks, very precise structures can be machined into the silicon/silicon oxide layers.
- WDM optical communication In wavelength division multiplexed (WDM) optical communication a number of channels of information are carried on a single beam of light by combining a number of closely spaced wavelength channels.
- the conventional C band for instance has a bandwidth of 40 nm (1520 - 1560 nm) containing 32 channels of information each channel being 0.8 nm wide.
- WDM wavelength division multiplexed
- the conventional C band for instance has a bandwidth of 40 nm (1520 - 1560 nm) containing 32 channels of information each channel being 0.8 nm wide.
- it is required to select one or more channels and re-route them elsewhere. At present this is achieved by splitting the beam to pass into a number of separate optical fibres and providing a fixed wavelength filter at the output of each fibre which allows only one of the wavelength channels to pass.
- each route can select only one channel.
- filters which are tuneable across the wavelength band of interest so that any one channel can be chosen from a single fibre providing optical flexibility.
- a single cavity etalon filter As is known such a device comprises two mirrors which are separated by a gap which is selected to be a finite number of wavelengths. For a given wavelength this gap is such that an optical resonance is created within the cavity between the two mirrors and that wavelength is able to pass through the mirrors. It is possible to tune the wavelength by varying the optical path length of the gap between the two mirrors either by modifying the refractive index of the medium between the two mirrors or by physically adjusting the gap between the two mirrors.
- the medium between the mirrors may be a liquid, gas or vacuum provided it is substantially transparent at the wavelengths of interest. For the current and future spacing of the WDM channels this would require a cavity whose gap is very precisely defined and which can be adjusted with nanometre accuracy.
- the optical characteristics of an etalon filter can be improved by using a double cavity in which three mirrors are separated by two optical cavities.
- the optical shape of the filter can be significantly improved. This is achieved by the outer two mirrors being moveable.
- such a filter enables any wavelength channel to be selected without needing to scan through intermediate channels.
- the present invention arose in an endeavour to provide a method of fabricating a double cavity optical filter.
- a method of fabricating a micro electro-mechanical system device comprises: providing at least two layered wafers; selectively etching layers of said wafers and joining the etched wafers to form the device; characterised by one or more of said wafers comprising at least two material layers which when selectively etched form a part of the assembled device, said material layers having a layer of a different material therebetween which is resistant to an etchant of said material layers and wherein at least one of said material layers is of a pre-selected thickness which is used to define a spacing member for determining a distance between layers of the etched wafers when they are joined.
- the material layers comprises silicon
- the etchant resistant layer comprises silicon dioxide.
- a micro electro-mechanical system device of a type comprising two or more layered .wafers which have been selectively etched and joined together to form the device is characterised in that one or more of said wafers comprises at least two material layers which when selectively etched form a part of the assembled device, said material layers having a layer of a different material therebetween which is resistant to an etchant of said material layers and wherein at least one of said material layers is of a pre-selected thickness which is used to define a spacing member for determining a distance between layers of the etched wafers when they are joined.
- the one or more wafers comprises further material and etchant resistant layers and in which the further material layer is used to provide mechanical strength to the wafer and or assembled device.
- the material layers comprise silicon and the etchant resistant layer comprises silicon dioxide.
- the present invention finds particular application for devices which also involve an optical interaction and in a preferred embodiment the distance between layers defines an optical cavity.
- Figure 1 is a schematic isometric representation of a tuneable filter in accordance with the invention
- Figure 2 is a cross section through the filter of Figure 1 through a line "AA"; and Figures 3a - 3j illustrate various steps in the fabrication of the filter of Figures 1 and 2.
- FIG. 1 there is shown a tuneable optical filter 1 in accordance with the invention for use within a WDM optical telecommunication system for selecting a given wavelength channel.
- the filter 2 comprises a three layered structure in which the respective layers, denoted "layer 1", 2 and 3 in the Figure, are bonded together to form a filter assembly.
- the filter comprises a double cavity etalon structure which is defined by a fixed central mirror 4 and two outer moveable mirrors 6 and 8.
- the fixed central mirror 4 is fabricated as part of layer 2 whilst the moveable mirrors 6 and 8 are formed as part of layers 1 and 3 respectively.
- each is mounted on a respective moveable support frame 10 which is formed as an integral part of the surrounding material and which is resiliently and deformably attached to the surrounding material by four flexible linkage arms 12 which have been formed by selectively etching through the material ( Figure 1).
- Movement of the mirrors can be effected using a piezoelectric transducer which is conveniently deposited as a thin film and positioned on the linkage arms or using the electrostatic force generated between respective pairs of electrodes positioned on the support frames for the fixed and moveable mirrors.
- a piezoelectric transducer which is conveniently deposited as a thin film and positioned on the linkage arms or using the electrostatic force generated between respective pairs of electrodes positioned on the support frames for the fixed and moveable mirrors.
- 8 four piezoelectric transducers or electrode pairs are provided for moving each mirror.
- a silicon on oxide (SOI) wafer 14 which is used to fabricate the layers 1 and 3 of the filter. Layers 1 and 3 are identical and the following process steps accordingly apply to the production of both layers.
- the wafer 14 comprises a layered structure comprising, in order, a handle layer 16 of silicon (Si) which is used during fabrication to manipulate (handle) the wafer and to provide mechanical strength once the wafer has been processed; a buried silicon dioxide layer 18 (SiO 2 ) which acts as an etch stop during micro-machining of the wafer and a device layer 20 of silicon in which the moveable support frame 10 and flexible linkage arms are to be formed.
- the device layer 20 is of a selected thickness with a very precise tolerance which is between 5 and 100 microns thick.
- the handle layer 16 can be any thickness appropriate to give mechanical support to the device and is typically 250 microns.
- the silicon layers 16, 20 and oxide layers are substantially stress free and each have a very high tolerance on their thickness and parallelism.
- the moveable mirror 6, 8 is selectively deposited onto the surface of the device layer 20.
- the mirror is a multilayer dielectric thin film material which is deposited using for example sputter deposition or other deposition technique.
- the handle layer 16 is selectively etched to form a perimeter frame 22 which provides mechanical strength during subsequent processing of the wafer and allow acces to the buried oxide layer 18 for the next stage of fabrication.
- the frame 22 also provides a mechanical support for the completed filter such that it can be mounted and interconnected into a suitable package. It will be readily appreciated by those skilled in the art that any of the known micro-machining techiques can used during the processing of the wafers such as for example wet (chemical) or dry (plasma) etching.
- the oxide layer 18 and device layer 20 are selectively etched through their entire thickness to form the moveable support 10 and linkage arms 12.
- the four piezoelectric actuators (not shown), in the form of a PZT film, are deposited on the linkage arms together with any metal layers required to allow electrical connection to the actuators.
- the support frame is moved electrostaically using elctrodes which are located around the perimeter of the support frame 10.
- Figure 3d represents the completed layers 1 and 3 of the filter.
- FIG. 3e there is shown a second SOI wafer 24 which is used to fabricate layers 2 of the filter which includes the fixed mirror 4.
- the wafer 24 unlike the known SOI wafers comprises a plurality of silicon device layers, three in the embodiment described, which are separated by a respective oxide layer.
- the wafer 24 comprises: a handle layer 26 of silicon which is used during fabrication to manipulate (handle) the wafer; a first buried silicon dioxide layer 28 which acts as an etch stop during micro-machining of the wafer; a first device layer 30 of silicon into which spacing members (stand offs) will be formed for precisely defining the the dimension of the first cavity when layers 1 and 3 are subsequently joined; a second buried silicon dioxide layer 32 which acts as an etch stop during micro-machining of the wafer; a second device layer 34 of silicon in which a support frame for the fixed mirror 4 is formed; a third buried silicon dioxide layer 36 which acts as an etch stop during micro- machining of the wafer and a third device layer 38 of silicon in which spacing members (stand offs) will be formed for precisely defining the the dimension of the second cavity when the layer 1 is joined to the assembly.
- each of the device layers 30, 34, 38 are of a selected thickness of a very precise tolerance and are substantially stress free.
- the device layer 38 of the second wafer is selectively etched to leave spacing members 40 (stand offs) extending from the surface of the wafer.
- the spacing members 40 which can comprise a frame or a number of elements, extends from the wafer by an amount corresponding to the original thickness of the layer 38.
- the fixed mirror 4 is deposited in the form of a multi-layer dielectric film onto the surface of the third etch stop layer 36. Any electrical contacts as would be necessary for a filter which is to be operated electrostatically are appropriately deposited on the etch stop layer 36.
- the partially processed second wafer (Figure3f) is inverted and joined to the processed layer 3 ( Figure 3d) to provide essentially a single wafer for further processing. All further processing of the wafer assembly is conducted on the exposed surfaces of the second wafer and the perimeter frame 22 of layer 3 is used as the handle layer.
- the two wafers are joined together by means of an adhesive joint 42 around the periphery of the spacing members 40 though a solder joint could alternatively be used provided suitable wetting surfaces are provided.
- a solder joint could alternatively be used provided suitable wetting surfaces are provided.
- Whatever bonding technique it should ideally provide a tensile bond which pulls the two wafers together until the spacing members abut the surface of the layer 3.
- the second device and oxide layers 32, 34 are selectively etched through their entire thickness to define a frame which supports the fixed mirror 4. At this stage appropriate contacts can be set down as required especially where it is intended to operate the filter electrostatically.
- the completed layer 1 (Figure 3d) is inverted and bonded on top of the processed wafer assembly ( Figure 3i) by means of adhesive joints 46 to form the finished optical filter assembly 2.
- the gap between the opposing surfaces of the fixed mirror 4 and moveable mirror 8 (second optical cavity) is determined by the dimension of the spacing members 44.
- the present invention is not limited to the optical filter described and that variations can be made which are within the scope of the invention.
- the method of using a layered wafer, most preferably an SOI wafer, having two or more device layers with a buried etch stop layer in between and micro-machining one or more of those device layers to provide spacing members such as to define very precise cavities and/or distances between layers of the machined wafers when the wafrs are subsequently joined is considered inventive in its own right and can accordingly be can be applied in the fabrication of any MEMS device.
- the present invention provides a method of fabricating and assembling a number of wafers such that gaps or spaces between or within layers of the wafers are created that have a very well defined dimension, tolerance and parallelism.
- the thickness of the device layers of the SOI wafer are preselected when the wafer is made, this allows the spacing members and hence cavities to be created which have very precise dimensions.
- the thickness of the device layer used to create the spacing members could be as little as a fraction of a micron to many hundreds of microns, in either case the tolerence on the thickness being less than a micron across the entire wafer (up to 8 or more inches).
- This has a number of advantges in that thousands of identical devices all of which have the same dimensions and tolerances can be fabricated on a single wafer.
- Such dimensional accuracy is essential in applications in which the device operates at radio frequencies or involves optical interactions which can require accuracy in these dimensions which are a fraction of the wavelength of the radiation.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Micromachines (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2001287936A AU2001287936A1 (en) | 2000-09-25 | 2001-09-25 | Micro electro-mechanical systems |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0023477.3 | 2000-09-25 | ||
GB0023477A GB2371119A (en) | 2000-09-25 | 2000-09-25 | Micro electro-mechanical systems |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002024570A1 true WO2002024570A1 (fr) | 2002-03-28 |
Family
ID=9900084
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/GB2001/004271 WO2002024570A1 (fr) | 2000-09-25 | 2001-09-25 | Systemes micro electro-mecaniques |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU2001287936A1 (fr) |
GB (1) | GB2371119A (fr) |
WO (1) | WO2002024570A1 (fr) |
Cited By (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003089957A2 (fr) * | 2002-04-17 | 2003-10-30 | M2N Inc. | Microactionneur piezoelectrique et son procede de fabrication |
WO2006036435A1 (fr) * | 2004-09-27 | 2006-04-06 | Idc, Llc | Maitrise du comportement electromecanique de structures a l'interieur d'un dispositif de systemes micro electromecaniques |
WO2006036385A1 (fr) * | 2004-09-27 | 2006-04-06 | Idc, Llc | Dispositif mems fabrique sur un substrat preconfigure |
EP1780521A1 (fr) * | 2005-11-01 | 2007-05-02 | Olympus Corporation | Dispositif étalon et son procédé de fabrication. |
US7706050B2 (en) | 2004-03-05 | 2010-04-27 | Qualcomm Mems Technologies, Inc. | Integrated modulator illumination |
US7710632B2 (en) | 2004-09-27 | 2010-05-04 | Qualcomm Mems Technologies, Inc. | Display device having an array of spatial light modulators with integrated color filters |
US7807488B2 (en) | 2004-09-27 | 2010-10-05 | Qualcomm Mems Technologies, Inc. | Display element having filter material diffused in a substrate of the display element |
US7813026B2 (en) | 2004-09-27 | 2010-10-12 | Qualcomm Mems Technologies, Inc. | System and method of reducing color shift in a display |
US7928928B2 (en) | 2004-09-27 | 2011-04-19 | Qualcomm Mems Technologies, Inc. | Apparatus and method for reducing perceived color shift |
US8040588B2 (en) | 2004-09-27 | 2011-10-18 | Qualcomm Mems Technologies, Inc. | System and method of illuminating interferometric modulators using backlighting |
US8059326B2 (en) | 1994-05-05 | 2011-11-15 | Qualcomm Mems Technologies Inc. | Display devices comprising of interferometric modulator and sensor |
WO2012003529A1 (fr) * | 2010-07-05 | 2012-01-12 | Newsouth Innovations Pty Limited | Système d'actionnement de lentille micro-électro-mécanique à base de piézoélectrique |
CN102928977A (zh) * | 2012-10-24 | 2013-02-13 | 无锡微奥科技有限公司 | 一种mems微镜双稳态结构的制作方法及光开关 |
US8693084B2 (en) | 2008-03-07 | 2014-04-08 | Qualcomm Mems Technologies, Inc. | Interferometric modulator in transmission mode |
US8736939B2 (en) | 2011-11-04 | 2014-05-27 | Qualcomm Mems Technologies, Inc. | Matching layer thin-films for an electromechanical systems reflective display device |
US8848294B2 (en) | 2010-05-20 | 2014-09-30 | Qualcomm Mems Technologies, Inc. | Method and structure capable of changing color saturation |
US8872085B2 (en) | 2006-10-06 | 2014-10-28 | Qualcomm Mems Technologies, Inc. | Display device having front illuminator with turning features |
US8941631B2 (en) | 2007-11-16 | 2015-01-27 | Qualcomm Mems Technologies, Inc. | Simultaneous light collection and illumination on an active display |
US8964280B2 (en) | 2006-06-30 | 2015-02-24 | Qualcomm Mems Technologies, Inc. | Method of manufacturing MEMS devices providing air gap control |
US8963159B2 (en) | 2011-04-04 | 2015-02-24 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
US8970939B2 (en) | 2004-09-27 | 2015-03-03 | Qualcomm Mems Technologies, Inc. | Method and device for multistate interferometric light modulation |
US8971675B2 (en) | 2006-01-13 | 2015-03-03 | Qualcomm Mems Technologies, Inc. | Interconnect structure for MEMS device |
US8979349B2 (en) | 2009-05-29 | 2015-03-17 | Qualcomm Mems Technologies, Inc. | Illumination devices and methods of fabrication thereof |
US9001412B2 (en) | 2004-09-27 | 2015-04-07 | Qualcomm Mems Technologies, Inc. | Electromechanical device with optical function separated from mechanical and electrical function |
US9019590B2 (en) | 2004-02-03 | 2015-04-28 | Qualcomm Mems Technologies, Inc. | Spatial light modulator with integrated optical compensation structure |
US9019183B2 (en) | 2006-10-06 | 2015-04-28 | Qualcomm Mems Technologies, Inc. | Optical loss structure integrated in an illumination apparatus |
US9025235B2 (en) | 2002-12-25 | 2015-05-05 | Qualcomm Mems Technologies, Inc. | Optical interference type of color display having optical diffusion layer between substrate and electrode |
NO336140B1 (no) * | 2009-09-18 | 2015-05-26 | Sintef | Aktuator for mikro optisk enhet |
US9057872B2 (en) | 2010-08-31 | 2015-06-16 | Qualcomm Mems Technologies, Inc. | Dielectric enhanced mirror for IMOD display |
US9086564B2 (en) | 2004-09-27 | 2015-07-21 | Qualcomm Mems Technologies, Inc. | Conductive bus structure for interferometric modulator array |
US9097885B2 (en) | 2004-09-27 | 2015-08-04 | Qualcomm Mems Technologies, Inc. | Device having a conductive light absorbing mask and method for fabricating same |
US9134527B2 (en) | 2011-04-04 | 2015-09-15 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
EP2823351A4 (fr) * | 2012-03-07 | 2016-01-06 | Univ Singapore | Diaphragme à iris mems destiné à un système optique, et procédé pour ajuster la taille d'une ouverture de ce diaphragme |
CN109883602A (zh) * | 2019-03-13 | 2019-06-14 | 中国电子科技集团公司第四十九研究所 | 一种基于soi的自补偿硅微谐振式压力敏感芯片 |
US10488256B2 (en) | 2017-05-26 | 2019-11-26 | California Institute Of Technology | Spectral filter having controllable spectral bandwidth and resolution |
US20210302231A1 (en) * | 2020-03-27 | 2021-09-30 | Nanohmics, Inc. | Tunable notch filter |
US11287322B2 (en) | 2019-02-06 | 2022-03-29 | California Institute Of Technology | Compact hyperspectral mid-infrared spectrometer |
US11313722B2 (en) | 2019-11-08 | 2022-04-26 | California Institute Of Technology | Infrared spectrometer having dielectric-polymer-based spectral filter |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2900400B1 (fr) * | 2006-04-28 | 2008-11-07 | Tronic S Microsystems Sa | Procede collectif de fabrication de membranes et de cavites de faible volume et de haute precision |
JP6496973B2 (ja) * | 2013-08-07 | 2019-04-10 | セイコーエプソン株式会社 | 光フィルター、光学モジュール、電子機器 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5129983A (en) * | 1991-02-25 | 1992-07-14 | The Charles Stark Draper Laboratory, Inc. | Method of fabrication of large area micromechanical devices |
EP0502222A1 (fr) * | 1989-07-27 | 1992-09-09 | Honeywell Inc. | Accéléromètre et son procédé de fabrication |
US5344523A (en) * | 1992-05-12 | 1994-09-06 | The Foxboro Comany | Overpressure-protected, polysilicon, capacitive differential pressure sensor and method of making the same |
WO1995026567A1 (fr) * | 1994-03-28 | 1995-10-05 | I/O Sensors, Inc. | Procede de fabrication d'elements de suspension pour capteurs micro-usines |
US5488862A (en) * | 1993-10-18 | 1996-02-06 | Armand P. Neukermans | Monolithic silicon rate-gyro with integrated sensors |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19757197A1 (de) * | 1997-12-22 | 1999-06-24 | Bosch Gmbh Robert | Herstellungsverfahren für mikromechanische Vorrichtung |
US5914804A (en) * | 1998-01-28 | 1999-06-22 | Lucent Technologies Inc | Double-cavity micromechanical optical modulator with plural multilayer mirrors |
WO1999052006A2 (fr) * | 1998-04-08 | 1999-10-14 | Etalon, Inc. | Modulation interferometrique de rayonnement |
US6014240A (en) * | 1998-12-01 | 2000-01-11 | Xerox Corporation | Method and apparatus for an integrated laser beam scanner using a carrier substrate |
US6836366B1 (en) * | 2000-03-03 | 2004-12-28 | Axsun Technologies, Inc. | Integrated tunable fabry-perot filter and method of making same |
-
2000
- 2000-09-25 GB GB0023477A patent/GB2371119A/en not_active Withdrawn
-
2001
- 2001-09-25 AU AU2001287936A patent/AU2001287936A1/en not_active Abandoned
- 2001-09-25 WO PCT/GB2001/004271 patent/WO2002024570A1/fr active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0502222A1 (fr) * | 1989-07-27 | 1992-09-09 | Honeywell Inc. | Accéléromètre et son procédé de fabrication |
US5129983A (en) * | 1991-02-25 | 1992-07-14 | The Charles Stark Draper Laboratory, Inc. | Method of fabrication of large area micromechanical devices |
US5344523A (en) * | 1992-05-12 | 1994-09-06 | The Foxboro Comany | Overpressure-protected, polysilicon, capacitive differential pressure sensor and method of making the same |
US5488862A (en) * | 1993-10-18 | 1996-02-06 | Armand P. Neukermans | Monolithic silicon rate-gyro with integrated sensors |
WO1995026567A1 (fr) * | 1994-03-28 | 1995-10-05 | I/O Sensors, Inc. | Procede de fabrication d'elements de suspension pour capteurs micro-usines |
Cited By (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8059326B2 (en) | 1994-05-05 | 2011-11-15 | Qualcomm Mems Technologies Inc. | Display devices comprising of interferometric modulator and sensor |
WO2003089957A3 (fr) * | 2002-04-17 | 2003-12-04 | M2N Inc | Microactionneur piezoelectrique et son procede de fabrication |
WO2003089957A2 (fr) * | 2002-04-17 | 2003-10-30 | M2N Inc. | Microactionneur piezoelectrique et son procede de fabrication |
US9025235B2 (en) | 2002-12-25 | 2015-05-05 | Qualcomm Mems Technologies, Inc. | Optical interference type of color display having optical diffusion layer between substrate and electrode |
US9019590B2 (en) | 2004-02-03 | 2015-04-28 | Qualcomm Mems Technologies, Inc. | Spatial light modulator with integrated optical compensation structure |
US7706050B2 (en) | 2004-03-05 | 2010-04-27 | Qualcomm Mems Technologies, Inc. | Integrated modulator illumination |
US7880954B2 (en) | 2004-03-05 | 2011-02-01 | Qualcomm Mems Technologies, Inc. | Integrated modulator illumination |
US9097885B2 (en) | 2004-09-27 | 2015-08-04 | Qualcomm Mems Technologies, Inc. | Device having a conductive light absorbing mask and method for fabricating same |
WO2006036385A1 (fr) * | 2004-09-27 | 2006-04-06 | Idc, Llc | Dispositif mems fabrique sur un substrat preconfigure |
US7710632B2 (en) | 2004-09-27 | 2010-05-04 | Qualcomm Mems Technologies, Inc. | Display device having an array of spatial light modulators with integrated color filters |
US7807488B2 (en) | 2004-09-27 | 2010-10-05 | Qualcomm Mems Technologies, Inc. | Display element having filter material diffused in a substrate of the display element |
US7813026B2 (en) | 2004-09-27 | 2010-10-12 | Qualcomm Mems Technologies, Inc. | System and method of reducing color shift in a display |
US7587104B2 (en) | 2004-09-27 | 2009-09-08 | Idc, Llc | MEMS device fabricated on a pre-patterned substrate |
US7928928B2 (en) | 2004-09-27 | 2011-04-19 | Qualcomm Mems Technologies, Inc. | Apparatus and method for reducing perceived color shift |
US8040588B2 (en) | 2004-09-27 | 2011-10-18 | Qualcomm Mems Technologies, Inc. | System and method of illuminating interferometric modulators using backlighting |
WO2006036435A1 (fr) * | 2004-09-27 | 2006-04-06 | Idc, Llc | Maitrise du comportement electromecanique de structures a l'interieur d'un dispositif de systemes micro electromecaniques |
US9086564B2 (en) | 2004-09-27 | 2015-07-21 | Qualcomm Mems Technologies, Inc. | Conductive bus structure for interferometric modulator array |
US8285089B2 (en) | 2004-09-27 | 2012-10-09 | Qualcomm Mems Technologies, Inc. | MEMS device fabricated on a pre-patterned substrate |
US8970939B2 (en) | 2004-09-27 | 2015-03-03 | Qualcomm Mems Technologies, Inc. | Method and device for multistate interferometric light modulation |
US7664345B2 (en) | 2004-09-27 | 2010-02-16 | Qualcomm Mems Technologies, Inc. | MEMS device fabricated on a pre-patterned substrate |
US9001412B2 (en) | 2004-09-27 | 2015-04-07 | Qualcomm Mems Technologies, Inc. | Electromechanical device with optical function separated from mechanical and electrical function |
EP1780521A1 (fr) * | 2005-11-01 | 2007-05-02 | Olympus Corporation | Dispositif étalon et son procédé de fabrication. |
US7474412B2 (en) | 2005-11-01 | 2009-01-06 | Olympus Corporation | Etalon device and manufacturing method thereof |
US8971675B2 (en) | 2006-01-13 | 2015-03-03 | Qualcomm Mems Technologies, Inc. | Interconnect structure for MEMS device |
US8964280B2 (en) | 2006-06-30 | 2015-02-24 | Qualcomm Mems Technologies, Inc. | Method of manufacturing MEMS devices providing air gap control |
US8872085B2 (en) | 2006-10-06 | 2014-10-28 | Qualcomm Mems Technologies, Inc. | Display device having front illuminator with turning features |
US9019183B2 (en) | 2006-10-06 | 2015-04-28 | Qualcomm Mems Technologies, Inc. | Optical loss structure integrated in an illumination apparatus |
US8941631B2 (en) | 2007-11-16 | 2015-01-27 | Qualcomm Mems Technologies, Inc. | Simultaneous light collection and illumination on an active display |
US8693084B2 (en) | 2008-03-07 | 2014-04-08 | Qualcomm Mems Technologies, Inc. | Interferometric modulator in transmission mode |
US9121979B2 (en) | 2009-05-29 | 2015-09-01 | Qualcomm Mems Technologies, Inc. | Illumination devices and methods of fabrication thereof |
US8979349B2 (en) | 2009-05-29 | 2015-03-17 | Qualcomm Mems Technologies, Inc. | Illumination devices and methods of fabrication thereof |
NO336140B1 (no) * | 2009-09-18 | 2015-05-26 | Sintef | Aktuator for mikro optisk enhet |
US9250418B2 (en) | 2009-09-18 | 2016-02-02 | Sintef | Fabry-perot interferometer with piezoelectric actuator contracting in radial direction on membrane |
US9329360B2 (en) | 2009-09-18 | 2016-05-03 | Sintef | Actuator having two piezoelectric elements on a membrane |
US8848294B2 (en) | 2010-05-20 | 2014-09-30 | Qualcomm Mems Technologies, Inc. | Method and structure capable of changing color saturation |
CN103180239A (zh) * | 2010-07-05 | 2013-06-26 | 艾伦·迈克 | 基于压电的微机电透镜致动系统 |
WO2012003529A1 (fr) * | 2010-07-05 | 2012-01-12 | Newsouth Innovations Pty Limited | Système d'actionnement de lentille micro-électro-mécanique à base de piézoélectrique |
US8866364B2 (en) | 2010-07-05 | 2014-10-21 | Aron Michael | Piezo-electric based micro-electro-mechanical lens actuation system |
US9057872B2 (en) | 2010-08-31 | 2015-06-16 | Qualcomm Mems Technologies, Inc. | Dielectric enhanced mirror for IMOD display |
US9134527B2 (en) | 2011-04-04 | 2015-09-15 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
US8963159B2 (en) | 2011-04-04 | 2015-02-24 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
US8736939B2 (en) | 2011-11-04 | 2014-05-27 | Qualcomm Mems Technologies, Inc. | Matching layer thin-films for an electromechanical systems reflective display device |
US9081188B2 (en) | 2011-11-04 | 2015-07-14 | Qualcomm Mems Technologies, Inc. | Matching layer thin-films for an electromechanical systems reflective display device |
EP2823351A4 (fr) * | 2012-03-07 | 2016-01-06 | Univ Singapore | Diaphragme à iris mems destiné à un système optique, et procédé pour ajuster la taille d'une ouverture de ce diaphragme |
CN102928977A (zh) * | 2012-10-24 | 2013-02-13 | 无锡微奥科技有限公司 | 一种mems微镜双稳态结构的制作方法及光开关 |
US10488256B2 (en) | 2017-05-26 | 2019-11-26 | California Institute Of Technology | Spectral filter having controllable spectral bandwidth and resolution |
US11287322B2 (en) | 2019-02-06 | 2022-03-29 | California Institute Of Technology | Compact hyperspectral mid-infrared spectrometer |
US11629996B2 (en) | 2019-02-06 | 2023-04-18 | California Institute Of Technology | Compact hyperspectral mid-infrared spectrometer |
CN109883602A (zh) * | 2019-03-13 | 2019-06-14 | 中国电子科技集团公司第四十九研究所 | 一种基于soi的自补偿硅微谐振式压力敏感芯片 |
US11313722B2 (en) | 2019-11-08 | 2022-04-26 | California Institute Of Technology | Infrared spectrometer having dielectric-polymer-based spectral filter |
US20210302231A1 (en) * | 2020-03-27 | 2021-09-30 | Nanohmics, Inc. | Tunable notch filter |
US11788887B2 (en) * | 2020-03-27 | 2023-10-17 | Nanohmics, Inc. | Tunable notch filter |
Also Published As
Publication number | Publication date |
---|---|
AU2001287936A1 (en) | 2002-04-02 |
GB0023477D0 (en) | 2000-11-08 |
GB2371119A (en) | 2002-07-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2002024570A1 (fr) | Systemes micro electro-mecaniques | |
US6711317B2 (en) | Resiliently packaged MEMs device and method for making same | |
US6574026B2 (en) | Magnetically-packaged optical MEMs device | |
US6519075B2 (en) | Packaged MEMS device and method for making the same | |
US6995495B2 (en) | 2-D actuator and manufacturing method thereof | |
US6445841B1 (en) | Optomechanical matrix switches including collimator arrays | |
US6453083B1 (en) | Micromachined optomechanical switching cell with parallel plate actuator and on-chip power monitoring | |
JP3801099B2 (ja) | チューナブルフィルタ、その製造方法、及びそれを使用した光スイッチング装置 | |
US6449406B1 (en) | Micromachined optomechanical switching devices | |
US6704475B2 (en) | Mirror for use with a micro-electro-mechanical system (MEMS) optical device and a method of manufacture therefor | |
US7190854B1 (en) | Methods for forming an array of MEMS optical elements | |
US6747784B2 (en) | Compliant mechanism and method of forming same | |
US20050094931A1 (en) | Optical switch and production method therefor, information transmission device using it | |
US6618184B2 (en) | Device for use with a micro-electro-mechanical system (MEMS) optical device and a method of manufacture therefor | |
US6442307B1 (en) | Solder-packaged optical MEMs device and method for making the same | |
US6275324B1 (en) | Micromachined tunable optical filter with controllable finesse and passband wavelength position | |
US7203393B2 (en) | MEMS micro mirrors driven by electrodes fabricated on another substrate | |
US6445840B1 (en) | Micromachined optical switching devices | |
JP2005519784A (ja) | 絶縁物質に具現されたmemsコームアクチュエータとその製造方法 | |
JP2005031326A (ja) | 光フィルター | |
US20230023348A1 (en) | Fabrication of a micro-mirror with reduced moment of inertia and mems devices | |
US20040161193A1 (en) | Optical resonator, fabrication of concave mirror thereof, and optical filter using the same | |
US7269325B2 (en) | Tunable optical device | |
US7016128B2 (en) | Method of making a high reflectivity micro mirror and a micro mirror | |
JP4559744B2 (ja) | 櫛歯型アクチュエータおよび光制御素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PH PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
122 | Ep: pct application non-entry in european phase | ||
NENP | Non-entry into the national phase |
Ref country code: JP |