WO2002021612A1 - Organischer gleichrichter, schaltung, rfid-tag und verwendung eines organischen gleichrichters - Google Patents
Organischer gleichrichter, schaltung, rfid-tag und verwendung eines organischen gleichrichters Download PDFInfo
- Publication number
- WO2002021612A1 WO2002021612A1 PCT/DE2001/003369 DE0103369W WO0221612A1 WO 2002021612 A1 WO2002021612 A1 WO 2002021612A1 DE 0103369 W DE0103369 W DE 0103369W WO 0221612 A1 WO0221612 A1 WO 0221612A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- organic
- rectifier
- conductive
- circuit
- semiconducting
- Prior art date
Links
- 239000004020 conductor Substances 0.000 claims description 10
- 239000003990 capacitor Substances 0.000 claims description 6
- 239000011368 organic material Substances 0.000 claims description 6
- 230000005669 field effect Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 10
- 229920003023 plastic Polymers 0.000 abstract description 4
- 239000004033 plastic Substances 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/20—Organic diodes
- H10K10/23—Schottky diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/20—Organic diodes
- H10K10/26—Diodes comprising organic-organic junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/115—Polyfluorene; Derivatives thereof
Definitions
- the invention relates to an organic rectifier, for example one via which the energy supply of an organic integrated circuit (plastic integrated circuit) takes place.
- OFETs organic field-effect transistors
- RFID tags radio frequency identification - tags
- the energy supply in these systems takes place via an antenna, which picks up electromagnetic radiation from a base station and / or a transmitter and converts it into alternating current.
- WO 99/30432 From WO 99/30432 it is known that at least one diode is used which converts the alternating current into direct current.
- This diode consists of a specially connected transistor (cf. FIG. 2 there). This arrangement limits the frequency that can be picked up by the diode, since the organic transistors that are used here as rectifiers generally switch much more slowly ( ⁇ 100 kHz) than the transmission frequency of the corresponding base stations (typically radio frequency) 13MHz).
- the object of the invention is therefore to improve the state of the art in such a way that a rectifier made of essentially organic materials and an RFID tag, comprising a plurality of organic field-effect transistors, is created which comprises a diode which rectifies radio frequencies. can.
- the object of the invention is to specify several possible uses for an organic rectifier.
- the invention relates to a rectifier based on at least one organic diode with at least one conductive and one semiconducting layer, at least one of the two layers comprising conductive and / or semiconducting organic material.
- the invention also relates to a circuit in which an organic rectifier is integrated.
- the subject of the invention is the use of an organic rectifier and, ultimately, an organic RFID tag with an integrated organic rectifier is the subject of the invention.
- Integrated is understood here to mean that the rectifier is part of the integrated circuit.
- the “organic rectifier” according to the invention, at least one of the p / n-doped conductive layers of a conventional pn-semiconductor diode is supplemented and / or replaced by an organic conductive material a conventional metal / semiconductor diode (Schottky diode) at least one layer can be replaced by an organic layer.
- a conventional metal / semiconductor diode Schottky diode
- both conductive layers are replaced by organic conductive material in both diodes.
- a rectifier can only be a single diode, comprise several diodes and / or additionally have a capacitor.
- organic diode as a rectifier for an ID tag and / or an RFID tag is in the foreground of the invention, but the invention is not intended to be restricted to this.
- the rectifier preferably comprises a capacitor so that the voltage that arrives pulsating behind the rectifier is smoothed.
- Known circuits in which e.g. a capacitor C is connected in parallel to the load resistor.
- the switching frequency of the rectifier can be set via the choice of the dimension, the capacitive area of the rectifier, preferably a dimension is selected which allows the highest possible switching frequency (for example in the MHz range). This can be achieved, for example, by a thick intermediate layer, which lowers the capacity. At the same time, the capacitive area is designed in such a way that it is suitable for mass production and sufficient current flow. Likewise, the connection of a rectifier bridge with charging capacitor and / or load resistor is conceivable, in particular for the extraction of larger direct currents.
- the organic rectifier consists of at least two organic rectifier molecules
- an undoped semiconducting layer can be inserted, which reduces the capacitance and thus enables higher frequencies.
- organic material here encompasses all types of organic, organometallic and / or inorganic
- Plastics which e.g. are referred to as "plastics". These are all types of substances with the exception of the semiconductors which form the classic diodes (germanium, silicon) and the typical metallic conductor. A limitation in the dogmatic sense to organic material as carbon-containing material Accordingly, it is not intended, but rather the broad use of, for example, silicones is also contemplated. Furthermore, the term should not be restricted to polymeric or oligomeric materials, but the use of "small molecules” is also conceivable.
- the material for the organic conductive materials e.g. Polyaniline (PANI) or PEDOT (polyethylene dioxythiophene) can be used.
- Suitable materials for the organic semiconducting materials are e.g. Polythiophenes or polyfluorenes.
- the organic semiconducting or semiconducting material is adapted to the organic semiconducting material in such a way that the structure of the rectifier gives a typical diode characteristic when a voltage is applied, the current flows only in one direction and is largely blocked in the other direction.
- Figure 1 shows a schematic structure of a rectifier.
- Rectifier diode The supply line 1 through which alternating current reaches the cathode 2 can be seen. At positive voltage, electrons from the cathode 2 enter the organic conductor material 3 and from there into the semiconducting material 4 and through the conductor material layer 5 to the anode 6.
- the lead 7 then receives the electrons.
- the rectifier closes and the semiconducting material blocks the current flow.
- the semiconductor layer should not be too thin, for example with layer thicknesses of 50 to 2000 nm.
- the layer thickness of the conductor materials is not so relevant, in order to have a contact as low as possible, should they be thicker than the semiconductor layers.
- the structure described in Figure 1 shows only a simple example. Additional layers can be added for optimization (e.g. to adjust the work function).
- the conductor materials must be adapted to the semiconductor material in such a way that the structure gives a diode characteristic, in other words that the current only flows in one direction and is largely blocked in the other.
- the ratio of the currents at least 10/1 if possible should be> 10 5/1, however. Almost the entire available current should flow in the forward direction even at the lowest possible voltages.
- the organic rectifier should have such a small dimension (capacitive area) that a switching frequency of at least 10 Hz is achieved, but if possible in the MHz range.
- a typical frequency for RfID tags is 13.56 MHz, this is preferably achieved with the rectifier.
- Organic rectifiers can be used in a variety of ways. For example, in
- Integrated circuits in general • "Ident systems” (ident tags, RFID (radio frequency ident tags) e.g. for
Landscapes
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Rectifiers (AREA)
- Near-Field Transmission Systems (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002525926A JP2004508731A (ja) | 2000-09-11 | 2001-09-03 | 有機整流器、回路、rfidタグ、および有機整流器の使用 |
EP01978087A EP1323194A1 (de) | 2000-09-11 | 2001-09-03 | Organischer gleichrichter, schaltung, rfid-tag und verwendung eines organischen gleichrichters |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10044842A DE10044842A1 (de) | 2000-09-11 | 2000-09-11 | Organischer Gleichrichter, Schaltung, RFID-Tag und Verwendung eines organischen Gleichrichters |
DE10044842.9 | 2000-09-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002021612A1 true WO2002021612A1 (de) | 2002-03-14 |
Family
ID=7655780
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2001/003369 WO2002021612A1 (de) | 2000-09-11 | 2001-09-03 | Organischer gleichrichter, schaltung, rfid-tag und verwendung eines organischen gleichrichters |
Country Status (5)
Country | Link |
---|---|
US (1) | US20030178620A1 (de) |
EP (1) | EP1323194A1 (de) |
JP (1) | JP2004508731A (de) |
DE (1) | DE10044842A1 (de) |
WO (1) | WO2002021612A1 (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004086514A2 (de) * | 2003-03-28 | 2004-10-07 | Siemens Aktiengesellschaft | Elektrooptischer dünnschicht-mikrowellen-detektor |
WO2012069480A1 (en) * | 2010-11-23 | 2012-05-31 | Acreo Ab | Diode, use thereof, and a method for producing the same |
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DE10043204A1 (de) * | 2000-09-01 | 2002-04-04 | Siemens Ag | Organischer Feld-Effekt-Transistor, Verfahren zur Strukturierung eines OFETs und integrierte Schaltung |
US7204425B2 (en) * | 2002-03-18 | 2007-04-17 | Precision Dynamics Corporation | Enhanced identification appliance |
DE10349028A1 (de) * | 2003-10-22 | 2005-06-02 | Siemens Ag | Transponder mit einem organischen Elektronikchip und metallischer Antenne sowie Verfahren zu dessen Herstellung |
US20050156656A1 (en) * | 2004-01-15 | 2005-07-21 | Rotzoll Robert R. | Non-quasistatic rectifier circuit |
DE102004040831A1 (de) * | 2004-08-23 | 2006-03-09 | Polyic Gmbh & Co. Kg | Funketikettfähige Umverpackung |
DE102004059465A1 (de) * | 2004-12-10 | 2006-06-14 | Polyic Gmbh & Co. Kg | Erkennungssystem |
DE102004059467A1 (de) * | 2004-12-10 | 2006-07-20 | Polyic Gmbh & Co. Kg | Gatter aus organischen Feldeffekttransistoren |
DE102004059464A1 (de) * | 2004-12-10 | 2006-06-29 | Polyic Gmbh & Co. Kg | Elektronikbauteil mit Modulator |
DE102004063435A1 (de) | 2004-12-23 | 2006-07-27 | Polyic Gmbh & Co. Kg | Organischer Gleichrichter |
DE102005009820A1 (de) * | 2005-03-01 | 2006-09-07 | Polyic Gmbh & Co. Kg | Elektronikbaugruppe mit organischen Logik-Schaltelementen |
DE102005009819A1 (de) | 2005-03-01 | 2006-09-07 | Polyic Gmbh & Co. Kg | Elektronikbaugruppe |
DE102005017655B4 (de) | 2005-04-15 | 2008-12-11 | Polyic Gmbh & Co. Kg | Mehrschichtiger Verbundkörper mit elektronischer Funktion |
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DE102005031448A1 (de) | 2005-07-04 | 2007-01-11 | Polyic Gmbh & Co. Kg | Aktivierbare optische Schicht |
DE102005035589A1 (de) | 2005-07-29 | 2007-02-01 | Polyic Gmbh & Co. Kg | Verfahren zur Herstellung eines elektronischen Bauelements |
US7176053B1 (en) * | 2005-08-16 | 2007-02-13 | Organicid, Inc. | Laser ablation method for fabricating high performance organic devices |
DE102005044306A1 (de) | 2005-09-16 | 2007-03-22 | Polyic Gmbh & Co. Kg | Elektronische Schaltung und Verfahren zur Herstellung einer solchen |
DE102005059608B4 (de) * | 2005-12-12 | 2009-04-02 | Polyic Gmbh & Co. Kg | Organisches elektronisches Bauelement mit verbesserter Spannungsstabilität und Verfahren zur Herstellung dazu |
DE102007028236A1 (de) | 2007-06-20 | 2009-01-02 | Siemens Ag | Halbleitendes Material und organische Gleichrichterdiode |
US20090004368A1 (en) * | 2007-06-29 | 2009-01-01 | Weyerhaeuser Co. | Systems and methods for curing a deposited layer on a substrate |
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Cited By (5)
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WO2004086514A2 (de) * | 2003-03-28 | 2004-10-07 | Siemens Aktiengesellschaft | Elektrooptischer dünnschicht-mikrowellen-detektor |
WO2004086514A3 (de) * | 2003-03-28 | 2005-02-10 | Siemens Ag | Elektrooptischer dünnschicht-mikrowellen-detektor |
WO2012069480A1 (en) * | 2010-11-23 | 2012-05-31 | Acreo Ab | Diode, use thereof, and a method for producing the same |
CN103262252A (zh) * | 2010-11-23 | 2013-08-21 | 德拉鲁国际公司 | 二极管,其用途,及其制备方法 |
US9508840B2 (en) | 2010-11-23 | 2016-11-29 | Acreo Swedich Ict Ab | Diode, use thereof, and a method for producing the same |
Also Published As
Publication number | Publication date |
---|---|
US20030178620A1 (en) | 2003-09-25 |
EP1323194A1 (de) | 2003-07-02 |
JP2004508731A (ja) | 2004-03-18 |
DE10044842A1 (de) | 2002-04-04 |
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