WO2002019438A1 - Detecteur de position a revetement de filtre optique et procede de fabrication de ce dernier - Google Patents

Detecteur de position a revetement de filtre optique et procede de fabrication de ce dernier Download PDF

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Publication number
WO2002019438A1
WO2002019438A1 PCT/SE2001/001877 SE0101877W WO0219438A1 WO 2002019438 A1 WO2002019438 A1 WO 2002019438A1 SE 0101877 W SE0101877 W SE 0101877W WO 0219438 A1 WO0219438 A1 WO 0219438A1
Authority
WO
WIPO (PCT)
Prior art keywords
filter
substrate
detector
position sensitive
wavelength selective
Prior art date
Application number
PCT/SE2001/001877
Other languages
English (en)
Inventor
Jan Wipenmyr
Original Assignee
Imego Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imego Ab filed Critical Imego Ab
Priority to AU2001282831A priority Critical patent/AU2001282831A1/en
Publication of WO2002019438A1 publication Critical patent/WO2002019438A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02024—Position sensitive and lateral effect photodetectors; Quadrant photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors

Definitions

  • the present invention relates to a method and arrangement relating to optical sensors and specially position sensitive sensors, comprising an analogue photo-diode for sensing the position of an incidence light spot on its active surface.
  • a Position Sensitive Detector can be used in for distance measurement, gauging, alignment and similar applications. Usually, it is possible to choose the properties of the light used for the measurement, specially the wavelength, power, and the modulation.
  • optical or electrical filtration To reduce the influence of additional light sources than the light to be measured, usually two techniques are used: optical or electrical filtration.
  • the electrical filtration involves amplitude modulation of the measured light, such as the sunlight or a low modulated light, such as light from fluorescent tubes.
  • optical filtration can be used, which implies that only light with same wavelength as the measured light is allowed to fall onto the PSD.
  • disadvantageous involved such as:
  • PSD is described in WO9608702, which relates to a photodetector for measuring the position of an incident light beam on an active surface area of the detector includes an inactive area and a concentric stray light absorbing area, both of which outwardly surround the light- absorbing active area. All light incident on the stray light-absorbing area and the inactive area will generate a photoelectric current, which is conducted to an earth ground via an electrode in the stray-light area. An electrical signal from the active area representing a position of the measured light in the active area will be unaffected by any stray light incident on the detector externally of the active area.
  • an infrared photodetector sensitive to the wavelength in the 0.8 to 1.1 ⁇ m range comprises a silicon substrate with high sensitivity, a diffusion layer defining a PN junction, and a CdTe layer, as filter, placed on the face close to the PN junction, for stopping radiations of wave lengths shorter than 0.8 ⁇ m.
  • a monocrystal (1) undergoes a treatment of mechanical and chemical polishing. Impurities of N type, phosphorus in the present case, are then diffused. The face intended to receive the radiation is masked and a chemical attack is affected, then the masking layer is removed. A PN junction (3) is thus obtained.
  • the contacts are then made by evaporation.
  • the contacts (4) and the end contact (5) of the face exposed to the radiation are in comb form in order to represent the minimum surface, whilst the opposite face bears a continuous contact (6).
  • the end contact (5) is masked and a layer (7) of CdTe is deposited on the face exposed to radiation. This deposit is affected by a technique such as thermal evaporation or cathodic sputtering.
  • a non-reflecting layer (8) of oxide is then deposited on the layer of CdTe, in order to reduce the losses by reflection in the useful spectral range and thus to improve the spectral response.
  • the mask of the contact (5) is finally removed.
  • US 4,871,118 discloses a light-sensitive device comprising: at least one light-sensitive element having a surface for receiving an incident light, and at least one colour filter made from a polyamide resin mixed with an organic pigment, applied on the light-receiving surface of the light-sensitive element.
  • a manufacturing method of a light-sensitive device having one or more light-sensitive regions comprising the steps of: applying at least one colour filter layer on the light-receiving surface of a light-sensitive region formed on a wafer of a semiconductor material, said layer being made from a polyamide resin containing an organic pigment; dicing said wafer into individual chips; bonding one of said chips to a lead frame member having electrical lead means; bonding electrical wires between the chip and said electrical lead means of said lead frame member for the connection to at least one external device; and moulding said chip bonded to said lead frame members with a resin.
  • a color image sensor of the type that reads color images with the aid of filters that absorb light of different colors (e.g. red, green and blue) and that are provided over arrays of light-receiving devices formed in a plurality of rows on a common substrate.
  • filters that absorb light of different colors (e.g. red, green and blue) and that are provided over arrays of light-receiving devices formed in a plurality of rows on a common substrate.
  • the color image sensor includes a substrate, light-receiving devices formed on the substrate, thin- film transistors that are connected to the light-receiving devices and that are formed on the substrate, an insulating layer that covers the thin-film transistors and the light-receiving devices, a color filter formed on the insulating layer in such a position that it covers the light-receiving devices, and a light-shielding layer formed on the insulating layer in such a position that it covers the thin-film transistors.
  • color filters (34a-34c) for different colors are arranged spaced apart from the sensor electrodes (21, 23) by means of a protective layer (33a, 33b).
  • the filter material consists of a clear photosensitive resin provided with an organic pigment.
  • a color photosensor which includes a plurality of closely arranged sensor units, is disclosed in US 5,274,250.
  • Each sensor includes a color filter provided at a position corresponding to that of a photoreceptor.
  • the color filter comprises at least one of coloring matter layers selected from the following groups (A), (B) and (C):
  • a red coloring matter layer including, as a main component, perylenetetracarboxylic acid derivatives selected from the following structural formulas (I) and (II): (I) (II) where Rl denotes hydrogen, an alkyl group or an allyl group;
  • B) a green coloring matter layer including, as a main component, phthalocyanine coloring matter, a combination of phthalocyanine coloring matter and isoindolenone coloring matter, or a combination of phthalocyanine coloring matter and authraquinone coloring matter;
  • C a blue coloring matter layer including, as a main component, phthalocyanine coloring matter, or a combination of
  • the main object of the present invention is to provide a filtering arrangement, which solves above-mentioned problems related with conventional optical and electrical filtrations.
  • the present invention a non-organic (hard) material is used as a wave selective filter or band pass filter, while the prior art uses organic material as colour filter.
  • the advantages are that using the nonorganic material a better protection of the sensor elements is achieved.
  • the wave selective filter according to the present invention is applied directly on the sensor while the prior art uses a protective layer and thus an additional manufacturing step.
  • the position sensitive detector comprising a substrate having an area provided with a photosensitive surface and electrical contacts, further comprises an optical filter coating, constituting a wavelength selective filter for a special wavelength made of a nonorganic, directly applied on said photosensitive surface.
  • the optical filter consists of one or several of silicon oxide (SiO 2 ), titanium oxide (TiO 2 ), dielectric oxides, being one of Nb 2 O 5 , Ta 2 O 5 , ZrO 2 , WO 3 and Al 2 O 3 , Fluorides or different types of metals for different filter layers.
  • the substrate is made of silicon on which said photosensitive area is doped with boron; preferably the silicon is n-type with high-resistance.
  • the invention also relates to a position sensitive detector arrangement comprising at least two position sensitive detectors arranged on a substrate and each comprising an area provided with a photosensitive surface and electrical contacts.
  • Each of said detectors further comprises a corresponding optical filter coating made of a nonorganic, each constituting a wavelength selective filter for a special wavelength, directly applied on said photosensitive surfaces.
  • a method of filtering unwanted wavelengths is provided according to the invention in a position sensitive detector comprising a substrate having an area provided with a photosensitive surface and electrical contacts.
  • the method comprises applying directly on said photosensitive surface an optical filter coating made of a nonorganic, constituting a wavelength selective filter for a special wavelength.
  • a method of manufacturing a position sensitive detector comprising the steps of: for each layer of wavelength selective filter material to be deposited on said photosensitive area: bringing said substrate provided with said photo sensitive area in a vacuum chamber, containing a wavelength selective filter material, using an electron gun is to split atoms from said wavelength selective filter material to be deposited as the filter on the photosensitive surface, and providing ion plasma in said chamber contributing with energy to the reaction, which result in a more dense attachment of the filter material onto the silicon wafer and denser coating.
  • Fig. 1 is a schematic cross-section through an embodiment according to prior art
  • Fig. 2 illustrates a schematic cross-section through an embodiment according to the invention
  • Fig. 3 illustrates a schematic view from above of another embodiment according to the invention.
  • the basic idea behind the invention is to apply the coating, which constitutes the wavelength selective filter for a special wavelength, directly onto the PSD active surface.
  • the coating is provided as a moment under the manufacturing process of the silicon wafer being arranged with the PSD.
  • the patterns can be made trough lift-off, Reactive Ion Etching (RIE) or Ion Assisted Deposition (IAD).
  • Fig. 2 shows a cross-sectional view through a PSD arrangement 20 provided with an optical filter according to the invention.
  • the arrangement comprises a PSD chip 21 comprising a silicon substrate 22 arranged with a light sensitive surface 23.
  • Contact pads 24 are arranged in connection with the active surface 23.
  • the edges of the chip are provided with silicon oxide 25.
  • a contact plate 26 is arranged under the substrate 22.
  • the substrate is arranged on a carrier 27.
  • the optical filter 28 is provided directly on the active light sensitive surface 23.
  • IAD is suitable for hard and compact filters.
  • the material to be coated for example, a silicon wafer provided with the photodiodes is placed in a vacuum chamber, which also contains the filter material.
  • An electron gun is used to split atoms from the material to be deposited as the filter on the photodiode active surface.
  • In the chamber is also an ion source, such as argon (Ar), oxygen (O), nitrogen (N) etc.
  • the ion plasma contributes energy to the reaction, which result in a more dense attachment of the filter material onto the silicon wafer and denser coating.
  • Each material is exposed for the electron gun and the ion plasma under an adequate time period to build a layer with suitable thickness.
  • the filter material may consist of silicon oxide (SiO 2 ) or titanium oxide (TiO 2 ), other dielectric oxides such as Nb2O5, Ta 2 O 5 , ZrO 2 , WO 3 and Al 2 O , Fluorides and different types of metals for different layers.
  • the photodiode active surface can be provided with passivator and anti-reflex coating made of silicon oxide. A thicker layer of silicon oxide can also be applied to the inactive area of the substrate.
  • connector material can be any conductive material, specially aluminium (Al) or gold (preferably in combination with chromium or NiCr as attachment material between the gold and the substrate).
  • the substrate may, for example, be made of silicon (e.g. n-type with high-resistance), on which the active area is doped with boron (p-type).
  • the silicon chip with the photodiode can be mounted on a ceramic substrate or in a package, made of metal, plastics, ceramic etc., provided with contact pads.
  • FIG. 3 shows one embodiment of a PSD arrangement 30 comprising two PSDs 31 A and 3 IB, each having a set of connector pads 34. However, each PDS 31 A, 3 IB is provided with an optical filter 38 A and 38B, respectively, for different wavelengths.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Optical Transform (AREA)
  • Light Receiving Elements (AREA)

Abstract

La présente invention concerne un détecteur de position (20) comprenant un substrat (21) dont une région comporte une surface photosensible (23) et des contacts électriques (24,26). Le détecteur de l'invention (20) est muni d'un revêtement de filtre optique (28) réalisé dans une matière non organique, qui constitue un filtre de sélection de longueur d'onde pour une longueur d'onde particulière et qui est directement appliqué sur la surface photosensible précitée (23).
PCT/SE2001/001877 2000-09-01 2001-09-03 Detecteur de position a revetement de filtre optique et procede de fabrication de ce dernier WO2002019438A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001282831A AU2001282831A1 (en) 2000-09-01 2001-09-03 A position sensitive detector with optical filter-coating and method of manufacturing

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE0003102A SE0003102L (sv) 2000-09-01 2000-09-01 Positionskänslig detektor
SE0003102-1 2000-09-01

Publications (1)

Publication Number Publication Date
WO2002019438A1 true WO2002019438A1 (fr) 2002-03-07

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PCT/SE2001/001877 WO2002019438A1 (fr) 2000-09-01 2001-09-03 Detecteur de position a revetement de filtre optique et procede de fabrication de ce dernier

Country Status (3)

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AU (1) AU2001282831A1 (fr)
SE (1) SE0003102L (fr)
WO (1) WO2002019438A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012173999A3 (fr) * 2011-06-17 2013-07-04 Kla-Tencor Corporation Spectromètre au niveau de plaquette
CN103956403A (zh) * 2014-04-03 2014-07-30 苏州北鹏光电科技有限公司 光电探测器制备方法及制备的广角光电探测器
US9360302B2 (en) 2011-12-15 2016-06-07 Kla-Tencor Corporation Film thickness monitor
CN107230743A (zh) * 2017-06-06 2017-10-03 芜湖乐知智能科技有限公司 一种新型光电位置敏感传感器

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0042326A1 (fr) * 1980-06-13 1981-12-23 Societe Anonyme De Telecommunications (S.A.T.) Photodétecteur rapide de grande surface sensible dans la gamme 0,8 - 1,1 micro-m.
US4700080A (en) * 1984-07-31 1987-10-13 Canon Kabushiki Kaisha Color photosensor utilizing color filters
US5274250A (en) * 1991-07-12 1993-12-28 Fuji Xerox Co., Ltd. Color image sensor with light-shielding layer
US5536964A (en) * 1994-09-30 1996-07-16 Green; Evan D. H. Combined thin film pinhole and semiconductor photodetectors
JP2001015797A (ja) * 1999-06-29 2001-01-19 Hitachi Denshi Ltd 光入射位置検出用半導体装置およびその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0042326A1 (fr) * 1980-06-13 1981-12-23 Societe Anonyme De Telecommunications (S.A.T.) Photodétecteur rapide de grande surface sensible dans la gamme 0,8 - 1,1 micro-m.
US4700080A (en) * 1984-07-31 1987-10-13 Canon Kabushiki Kaisha Color photosensor utilizing color filters
US5274250A (en) * 1991-07-12 1993-12-28 Fuji Xerox Co., Ltd. Color image sensor with light-shielding layer
US5536964A (en) * 1994-09-30 1996-07-16 Green; Evan D. H. Combined thin film pinhole and semiconductor photodetectors
JP2001015797A (ja) * 1999-06-29 2001-01-19 Hitachi Denshi Ltd 光入射位置検出用半導体装置およびその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012173999A3 (fr) * 2011-06-17 2013-07-04 Kla-Tencor Corporation Spectromètre au niveau de plaquette
US9140604B2 (en) 2011-06-17 2015-09-22 Kla-Tencor Corporation Wafer level spectrometer
US9964440B2 (en) 2011-06-17 2018-05-08 Kla-Tencor Corporation Wafer level spectrometer
US9360302B2 (en) 2011-12-15 2016-06-07 Kla-Tencor Corporation Film thickness monitor
CN103956403A (zh) * 2014-04-03 2014-07-30 苏州北鹏光电科技有限公司 光电探测器制备方法及制备的广角光电探测器
CN107230743A (zh) * 2017-06-06 2017-10-03 芜湖乐知智能科技有限公司 一种新型光电位置敏感传感器
CN107230743B (zh) * 2017-06-06 2019-06-14 南京云耕信息科技有限公司 一种光电位置敏感传感器

Also Published As

Publication number Publication date
SE0003102D0 (sv) 2000-09-01
SE0003102L (sv) 2002-03-02
AU2001282831A1 (en) 2002-03-13

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