WO2001093419A1 - Circuit de protection d'etage de sortie pour amplificateur de puissance - Google Patents
Circuit de protection d'etage de sortie pour amplificateur de puissance Download PDFInfo
- Publication number
- WO2001093419A1 WO2001093419A1 PCT/KR2001/000782 KR0100782W WO0193419A1 WO 2001093419 A1 WO2001093419 A1 WO 2001093419A1 KR 0100782 W KR0100782 W KR 0100782W WO 0193419 A1 WO0193419 A1 WO 0193419A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- output stage
- voltage
- protection circuit
- control part
- elements
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
- H03F3/3069—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor the emitters of complementary power transistors being connected to the output
- H03F3/3076—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor the emitters of complementary power transistors being connected to the output with symmetrical driving of the end stage
Definitions
- the present invention relates in general to an output stage protection circuit for power amplifiers, and more particularly to a protection circuit having a control part comprising a comparator or a high speed operational(OP) amplifier, which prevents output stage elements of a power amplifier from breaking when an overcurrent flows or overload is detected at the output stage.
- a protection circuit having a control part comprising a comparator or a high speed operational(OP) amplifier, which prevents output stage elements of a power amplifier from breaking when an overcurrent flows or overload is detected at the output stage.
- the output stage of power amplifiers typically includes elements such as a transistor, an FET(Field Effect Transistor) and an IGBT(Insulated Gate Bipolar Transistor).
- the power amplifiers are typically classified into four degrees of A, B, C, and H according to their operating capacities, and classified into push-pull amplifiers or SEPP(Single-Ended Push-Pull) amplifiers according to their constructions. In any case, the power amplifiers inevitably require an output stage protection circuit.
- the breakage of the elements of the power amplifier's output stages may result from an unstable circuit construction or operational instability of the output stages.
- breakage is mainly due to an electric overload such as an excessively high voltage, current and power, or a short-circuit of an output terminal.
- various methods for protecting the output stage elements from such breakage have been proposed and used.
- One of the conventional protecting methods is to reduce the drive power, thus preventing an overdrive when a load is short-circuited.
- Such a method is problematic in that it only reduces the output power of the amplifier.
- Another method is to shut down the output stage when a collector current of the output stage is greater than a normal level, thus preventing the collector current from flowing in the output stage.
- Fig. 1 is a circuit diagram showing a conventional output stage protection circuit for power amplifiers.
- a power amplifier including complementarily coupled transistors Q4 and Q5 is connected to a protection circuit having transistors Q6 and Q7.
- the above protection circuit is operated as follows. When an overcurrent flows through the transistors Q4 and Q5, the overcurrent is detected by resistors R3 and R6. At this time, the transistors Q6 and Q7 are turned on, such that the path of the current flowing through the transistors Q4 and Q5 is changed to another path including the transistors Q6 and Q7. Such an overcurrent may flow through the transistors Q4 and Q5 when the output terminal OUT is short-circuited to the ground, or when a speaker with an impedance lower than a normal level is connected to the output terminal OUT.
- the protection circuit when an overload is detected in the output stage elements, the protection circuit can restrict the flow of overcurrent effectively in the case of a constant load variation, but it cannot effectively protect the output stage elements in the case of an instantaneous output signal. Further, when the output stage is short-circuited without an output signal, the protection circuit can effectively protect the output stage elements with respect to an instantaneous short-circuit of the output stage, while it results in a breakage of the output stage elements due to an excessively high Pc(power consumption of a collector) during a constant short-circuit of the output stage.
- tsc of the IGBT which is recently popular used as an output stage element, is several micro-seconds remarkably shorter than that of a conventional transistor or FET.
- tsc of HGTG20N60C3 the IGBT made by Intersil co.Ltd., is about 4 ⁇ s.
- the expected life span of the semiconductor devices has become semipermanent. However, it is impossible to prevent the semiconductor devices from being broken due to an overcurrent or an electric short in its physical characteristics.
- the present invention has been made in view of the above problems, and it is an object of the present invention to provide an output stage protection circuit for power amplifiers, which detects currents flowing through output stage elements, restricts the currents to a level lower than a predetermined level when an overload is detected in the output stage, and restricts the currents within a safe range before breakage of the output stage elements when the output stage is short-circuited.
- an output stage protection circuit for a power amplifier in which currents flowing in output stage elements flow through a load resistor comprising a detection part for detecting an overcurrent at the output stage; and a control part for controlling the currents flowing in the output stage elements in response to the detected overcurrent, wherein the detection part includes a voltage division circuit for dividing a voltage dropped at the load resistor of the output stage, and the control part including a reference voltage generating part controls the current flowing in the output stage elements so that the divided voltage is maintained at the same level as a reference voltage by comparing the divided voltage with the reference voltage.
- control part uses a high speed comparator or high speed OP amplifier having a response time shorter than a short circuit withstand time of the output stage elements.
- the power supply voltage of the control part is applied from a main power supply using a constant current source and a zener diode, or an independent power supply.
- control part can be integrated with an IC package.
- Fig. 1 is a circuit diagram of a conventional output stage protection circuit for power amplifiers
- Figs. 2 through 4 are circuit diagrams of an output stage protection circuit for power amplifiers according to the preferred embodiment of this invention.
- Fig. 5 is a circuit diagram showing an independent power supplying circuit of the output stage protection circuit of this invention.
- Fig. 6 is a circuit diagram of a power amplifier to which the output stage protection circuit is adapted.
- the output stage protection circuit according to the present invention can be adapted to all kinds of power amplifiers.
- an output stage protection circuit used with a complementary power amplifier will be described as a preferred embodiment of this invention.
- the preferred embodiment is an example of output stage protection circuits used with complementary SEPP power amplifiers.
- the complementary SEPP power amplifier includes an upper output stage and a lower output stage, wherein the upper and lower output stages employ elements such as transistors or FETs with the same electric characteristics and different polarities.
- Figs. 2 through 4 are circuit diagrams of an output stage protection circuit for power amplifiers according to the present invention.
- Fig. 2 is an output stage protection circuit using a high speed comparator
- Fig. 3 is an output stage protection circuit using a conventional comparator.
- Fig. 4 is an output stage protection circuit using a high speed operational (OP) amplifier.
- the circuit employs a comparator designated by the reference character "LM319", and is used for protecting the output stage transistors Q4 and Q5.
- the LM319 is a high speed comparator with a response time of about 80ns, which is much shorter than that of transistors as well as IGBTs. Additionally, "AD8598" with a response time of about 7ns can be used as the high speed comparator.
- the output stage protection circuit for power amplifiers comprises a detection part 300, an upper control part 100, a lower control part 200, and a power supplying part 400.
- the detection part 300 detects an overcurrent and overload at the output stage.
- the control parts 100, 200 control currents flowing in the output stages in response to a detected overcurrent.
- the power supplying part 400 supplies a power voltage to the protection circuit.
- the power amplifier shown in Fig. 2 is a complementary SEPP power amplifier, and then the detection part 300, the control parts 100, 200, and the power supplying part 400 are divided into upper and lower parts, respectively.
- the construction and operation of the detection part 300 is similar to the conventional protection circuit. Specifically, resistors R9, R10 branched from the final output stage in the upper part are grounded through a diode D7. Similar to the upper part, resistors Rl l, R12 branched from the final output stage in the lower part are grounded through a diode D8.
- the detection part 300 with the upper and power parts is a typical voltage divider, of which the divided voltage from between the resistors R9, R10 is applied to a fifth pin of the comparator U1A and a ninth pin of the comparator U1B in the upper and lower control parts 100, 200.
- Each of the upper control part 100 and the lower control part 200 employs a high speed comparator UIA, U IB. Because there are not complementary type comparators, a P ⁇ P transistor Q6 is additionally connected to the output terminal of the lower comparator U1B. Typically, a conventional comparator or an OP amplifier is not designed in complementary-type, however, if the circuit of this invention is integrated into a hybrid IC package, a desired output stage protection circuit can be effectively realized only by compact wiring outside the IC package.
- a fourth pin (positive input terminal) of the upper comparator UIA and a tenth pin(negative input terminal) of the lower comparator U1B are terminals for receiving a reference voltage.
- the upper reference voltage generating part is a voltage divider including resistors R3, R4, R5, and a diode D5, which are connected to an upper power voltage.
- the lower reference voltage generating circuit is a voltage divider including resistors R6, R7 and a diode D6, which are connected to a lower power voltage.
- the reference voltage is a factor of determining a control current when the protection circuit of this invention is activated.
- the reference voltage can be generated by another construction as well as the circuit shown in Fig. 2. In this case, because the reference voltage is below several volt(V), maintenance of a precise voltage must be considered while designing the protection circuit.
- the control current of the control part is higher than a bias current. If the control current is lower than the bias current, a DC drift is generated in the output stage elements. On the other hand, if the control current is excessively high, during an activating of the protection circuit, the power consumption of the output stage exceeds the allowable Pc. At this time, if the output stage maintains a short-circuit state constantly, the protection circuit cannot protect the output stage, thereby breaking the output stage elements. For example, providing that both the resistance values of the resistors R15, R16 are 0.33 ⁇ , the bias current is 100mA, and the reference voltage is 0.1V, the control current of only 300mA flows in the circuit when the protection circuit is activated. Further, if the power supply voltage is 100V, the Pc of the output stage reaches 30 W, thus protecting the output stage during a constant short of the output stage.
- a current corresponding to a reference voltage flows through the resistor R15 or R16 in the upper or lower output stage.
- the reference voltage is 0.1V and the resistance values of the resistors R15, R16 are 0.33 ⁇ , the current of 300mA flows in the resistor R15 or R16.
- a control speed of the control part 100 or 200 is faster than t sc of the output stage elements, thus restricting the current flowing the resistor R15 or R16 within a safe range, without a breakage of the output stage elements.
- control speed of the control part is faster than a rise time of the current flowing through the output stage elements, thus restricting the maximum current flowing in elements within the control current.
- the output stage voltage added to the voltage dropped at the resistor R15 is detected and divided by the resistors R9 and RIO, while the output stage voltage added to the voltage dropped at the resistor R16 is detected and divided by the resistors Rl l and R12.
- the output power of the output stage can be limited.
- the power Po of the output stage is calculated as following Equation 1,
- the power Po is 600W and the current I is 17A. Accordingly, if using a load(e.g. speaker) of 2 ⁇ in a power amplifier designed to have a load of 4 ⁇ , the output stage elements will be broken due to an overcurrent during an output of a maximum power.
- a load(e.g. speaker) of 2 ⁇ in a power amplifier designed to have a load of 4 ⁇ the output stage elements will be broken due to an overcurrent during an output of a maximum power.
- Fig. 3 is a circuit diagram of a protection circuit using a conventional comparator
- Fig. 4 is a protection circuit using a conventional high speed OP amplifier.
- the basic constructions of the protection circuits shown in Figs. 3 and 4 remain the same as the protection circuit of Fig. 2.
- the term "conventional comparator” is defined as a comparator with a response time of hundreds of ns.
- the comparator "LM393" has a response time of about 300ns.
- the protection circuit compensates for the slow response time of the comparator LM393 by adding transistors Q6, Q7 and Q8 to the protection circuit.
- the protection circuit using the high speed OP amplifier as shown in Fig. 4 is not substantially different from the protection circuit shown in Fig. 3 in its construction.
- Fig. 6 is a circuit diagram of a power amplifier to which the output stage protection circuit is adapted. Referring to Fig. 6, four pairs of transistors are
- the output stage of the protection circuit is grounded to a reference potentiate. g. GND).
- Two methods may be used to supply a power voltage to the output stage protection circuit.
- the protection circuit employs an independent power supply 400 for the control parts 100, 200.
- the independent power supply 400 comprises a transformer TI, a rectifying diode D9 and smoothing capacitors C4, C5, and generates the separate supply voltages with a positive voltage and a negative voltage.
- the separate voltages are provided to the control parts 100, 200.
- a main power supply circuit consists of constant current sources 1, 2 and zener diodes Dl, D2.
- the power supply voltages of the control parts 100, 200 are supplied through the zener diodes Dl, D2.
- the output stage is grounded, thus supplying a constant voltage to the control parts.
- the method of Figs 2 through 4 is more suitable in a practical point of view.
- the present invention provides an output stage protection circuit for power amplifiers, which detects currents flowing through output stage elements, restricts the currents to a level lower than a predetermined level when an overload is detected in the output stage, and restricts the current within a safe range before a breakage of the output stage elements occurs when the output stage is shorted, thereby safely protecting the output stage against the overcurrent or a short- circuit of the output stage.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Amplifiers (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU56846/01A AU5684601A (en) | 2000-05-30 | 2001-05-15 | Output stage protection circuit for power amplifier |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2000-0029205A KR100394171B1 (ko) | 2000-05-30 | 2000-05-30 | 전력증폭기의 출력단 보호회로 |
KR2000-29205 | 2000-05-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001093419A1 true WO2001093419A1 (fr) | 2001-12-06 |
Family
ID=19670778
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2001/000782 WO2001093419A1 (fr) | 2000-05-30 | 2001-05-15 | Circuit de protection d'etage de sortie pour amplificateur de puissance |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR100394171B1 (fr) |
AU (1) | AU5684601A (fr) |
WO (1) | WO2001093419A1 (fr) |
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004120754A (ja) * | 2002-09-23 | 2004-04-15 | Harman Internatl Industries Inc | 増幅器の出力段のための熱保護システム |
CN106018934A (zh) * | 2016-08-01 | 2016-10-12 | 国网福建省电力有限公司 | 一种可连续调节过流点的igbt过流检测电路及其实现方法 |
WO2020023964A1 (fr) * | 2018-07-27 | 2020-01-30 | Eagle Harbor Technologies, Inc. | Système de puissance de polarisation de tranche variable dans l'espace |
US10847346B2 (en) | 2014-02-28 | 2020-11-24 | Eagle Harbor Technologies, Inc. | High voltage resistive output stage circuit |
US10896809B2 (en) | 2018-08-10 | 2021-01-19 | Eagle Harbor Technologies, Inc. | High voltage switch with isolated power |
US10903047B2 (en) | 2018-07-27 | 2021-01-26 | Eagle Harbor Technologies, Inc. | Precise plasma control system |
US10978955B2 (en) | 2014-02-28 | 2021-04-13 | Eagle Harbor Technologies, Inc. | Nanosecond pulser bias compensation |
US11004660B2 (en) | 2018-11-30 | 2021-05-11 | Eagle Harbor Technologies, Inc. | Variable output impedance RF generator |
US11159156B2 (en) | 2013-11-14 | 2021-10-26 | Eagle Harbor Technologies, Inc. | High voltage nanosecond pulser |
US11171568B2 (en) | 2017-02-07 | 2021-11-09 | Eagle Harbor Technologies, Inc. | Transformer resonant converter |
US11222767B2 (en) | 2018-07-27 | 2022-01-11 | Eagle Harbor Technologies, Inc. | Nanosecond pulser bias compensation |
US11227745B2 (en) | 2018-08-10 | 2022-01-18 | Eagle Harbor Technologies, Inc. | Plasma sheath control for RF plasma reactors |
US11302518B2 (en) | 2018-07-27 | 2022-04-12 | Eagle Harbor Technologies, Inc. | Efficient energy recovery in a nanosecond pulser circuit |
US11387076B2 (en) | 2017-08-25 | 2022-07-12 | Eagle Harbor Technologies, Inc. | Apparatus and method of generating a waveform |
US11404246B2 (en) | 2019-11-15 | 2022-08-02 | Eagle Harbor Technologies, Inc. | Nanosecond pulser bias compensation with correction |
US11430635B2 (en) | 2018-07-27 | 2022-08-30 | Eagle Harbor Technologies, Inc. | Precise plasma control system |
US11502672B2 (en) | 2013-11-14 | 2022-11-15 | Eagle Harbor Technologies, Inc. | High voltage nanosecond pulser with variable pulse width and pulse repetition frequency |
US11527383B2 (en) | 2019-12-24 | 2022-12-13 | Eagle Harbor Technologies, Inc. | Nanosecond pulser RF isolation for plasma systems |
US11532457B2 (en) | 2018-07-27 | 2022-12-20 | Eagle Harbor Technologies, Inc. | Precise plasma control system |
US11539352B2 (en) | 2013-11-14 | 2022-12-27 | Eagle Harbor Technologies, Inc. | Transformer resonant converter |
US11646176B2 (en) | 2019-01-08 | 2023-05-09 | Eagle Harbor Technologies, Inc. | Efficient nanosecond pulser with source and sink capability for plasma control applications |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020065404A (ko) * | 2002-05-24 | 2002-08-13 | 이스타랩(주) | 자동 부하 검출기능을 이용한 오디오 기기의 앰프 출력제어장치 및 그 제어방법 |
KR100900267B1 (ko) | 2007-08-06 | 2009-05-29 | (주)태진기술 | 초저전압 강하형 전압 레귤레이터 |
KR101312546B1 (ko) * | 2012-03-29 | 2013-09-30 | 김남걸 | 파워 앰프 과전류 제한 장치 |
KR101694242B1 (ko) | 2015-12-15 | 2017-01-09 | 현대오트론 주식회사 | 보호 회로를 포함하는 전력 증폭기 |
Citations (3)
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JPS5995710A (ja) * | 1982-11-25 | 1984-06-01 | Pioneer Electronic Corp | エミツタホロワ型sepp回路 |
JPH0567932A (ja) * | 1990-12-27 | 1993-03-19 | Pioneer Electron Corp | 増幅器 |
JPH0865061A (ja) * | 1994-08-24 | 1996-03-08 | Nippon Columbia Co Ltd | アイドリング電流制御回路 |
-
2000
- 2000-05-30 KR KR10-2000-0029205A patent/KR100394171B1/ko not_active IP Right Cessation
-
2001
- 2001-05-15 WO PCT/KR2001/000782 patent/WO2001093419A1/fr active Application Filing
- 2001-05-15 AU AU56846/01A patent/AU5684601A/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5995710A (ja) * | 1982-11-25 | 1984-06-01 | Pioneer Electronic Corp | エミツタホロワ型sepp回路 |
JPH0567932A (ja) * | 1990-12-27 | 1993-03-19 | Pioneer Electron Corp | 増幅器 |
JPH0865061A (ja) * | 1994-08-24 | 1996-03-08 | Nippon Columbia Co Ltd | アイドリング電流制御回路 |
Cited By (34)
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---|---|---|---|---|
JP2004120754A (ja) * | 2002-09-23 | 2004-04-15 | Harman Internatl Industries Inc | 増幅器の出力段のための熱保護システム |
CN100483931C (zh) * | 2002-09-23 | 2009-04-29 | 哈曼国际工业有限公司 | 放大器输出级的热保护系统 |
US11558048B2 (en) | 2013-11-14 | 2023-01-17 | Eagle Harbor Technologies, Inc. | High voltage nanosecond pulser |
US11539352B2 (en) | 2013-11-14 | 2022-12-27 | Eagle Harbor Technologies, Inc. | Transformer resonant converter |
US11502672B2 (en) | 2013-11-14 | 2022-11-15 | Eagle Harbor Technologies, Inc. | High voltage nanosecond pulser with variable pulse width and pulse repetition frequency |
US11159156B2 (en) | 2013-11-14 | 2021-10-26 | Eagle Harbor Technologies, Inc. | High voltage nanosecond pulser |
US10847346B2 (en) | 2014-02-28 | 2020-11-24 | Eagle Harbor Technologies, Inc. | High voltage resistive output stage circuit |
US11631573B2 (en) | 2014-02-28 | 2023-04-18 | Eagle Harbor Technologies, Inc. | High voltage resistive output stage circuit |
US10978955B2 (en) | 2014-02-28 | 2021-04-13 | Eagle Harbor Technologies, Inc. | Nanosecond pulser bias compensation |
US11689107B2 (en) | 2014-02-28 | 2023-06-27 | Eagle Harbor Technologies, Inc. | Nanosecond pulser bias compensation |
CN106018934A (zh) * | 2016-08-01 | 2016-10-12 | 国网福建省电力有限公司 | 一种可连续调节过流点的igbt过流检测电路及其实现方法 |
US11171568B2 (en) | 2017-02-07 | 2021-11-09 | Eagle Harbor Technologies, Inc. | Transformer resonant converter |
US11387076B2 (en) | 2017-08-25 | 2022-07-12 | Eagle Harbor Technologies, Inc. | Apparatus and method of generating a waveform |
US10892140B2 (en) | 2018-07-27 | 2021-01-12 | Eagle Harbor Technologies, Inc. | Nanosecond pulser bias compensation |
US10903047B2 (en) | 2018-07-27 | 2021-01-26 | Eagle Harbor Technologies, Inc. | Precise plasma control system |
US11075058B2 (en) | 2018-07-27 | 2021-07-27 | Eagle Harbor Technologies, Inc. | Spatially variable wafer bias power system |
US11875971B2 (en) | 2018-07-27 | 2024-01-16 | Eagle Harbor Technologies, Inc. | Efficient energy recovery in a nanosecond pulser circuit |
US11222767B2 (en) | 2018-07-27 | 2022-01-11 | Eagle Harbor Technologies, Inc. | Nanosecond pulser bias compensation |
US10991553B2 (en) | 2018-07-27 | 2021-04-27 | Eagle Harbor Technologies, Inc. | Nanosecond pulser thermal management |
US11302518B2 (en) | 2018-07-27 | 2022-04-12 | Eagle Harbor Technologies, Inc. | Efficient energy recovery in a nanosecond pulser circuit |
US11101108B2 (en) | 2018-07-27 | 2021-08-24 | Eagle Harbor Technologies Inc. | Nanosecond pulser ADC system |
US10892141B2 (en) | 2018-07-27 | 2021-01-12 | Eagle Harbor Technologies, Inc. | Nanosecond pulser pulse generation |
US11430635B2 (en) | 2018-07-27 | 2022-08-30 | Eagle Harbor Technologies, Inc. | Precise plasma control system |
US10811230B2 (en) | 2018-07-27 | 2020-10-20 | Eagle Harbor Technologies, Inc. | Spatially variable wafer bias power system |
US11587768B2 (en) | 2018-07-27 | 2023-02-21 | Eagle Harbor Technologies, Inc. | Nanosecond pulser thermal management |
US11532457B2 (en) | 2018-07-27 | 2022-12-20 | Eagle Harbor Technologies, Inc. | Precise plasma control system |
WO2020023964A1 (fr) * | 2018-07-27 | 2020-01-30 | Eagle Harbor Technologies, Inc. | Système de puissance de polarisation de tranche variable dans l'espace |
US10896809B2 (en) | 2018-08-10 | 2021-01-19 | Eagle Harbor Technologies, Inc. | High voltage switch with isolated power |
US11227745B2 (en) | 2018-08-10 | 2022-01-18 | Eagle Harbor Technologies, Inc. | Plasma sheath control for RF plasma reactors |
US11670484B2 (en) | 2018-11-30 | 2023-06-06 | Eagle Harbor Technologies, Inc. | Variable output impedance RF generator |
US11004660B2 (en) | 2018-11-30 | 2021-05-11 | Eagle Harbor Technologies, Inc. | Variable output impedance RF generator |
US11646176B2 (en) | 2019-01-08 | 2023-05-09 | Eagle Harbor Technologies, Inc. | Efficient nanosecond pulser with source and sink capability for plasma control applications |
US11404246B2 (en) | 2019-11-15 | 2022-08-02 | Eagle Harbor Technologies, Inc. | Nanosecond pulser bias compensation with correction |
US11527383B2 (en) | 2019-12-24 | 2022-12-13 | Eagle Harbor Technologies, Inc. | Nanosecond pulser RF isolation for plasma systems |
Also Published As
Publication number | Publication date |
---|---|
KR20010108619A (ko) | 2001-12-08 |
KR100394171B1 (ko) | 2003-08-09 |
AU5684601A (en) | 2001-12-11 |
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