WO2001083852A1 - Procede et dispositif de distribution de gaz dans une chambre de traitement de plasma a densite elevee garantissant la formation d'un plasma uniforme - Google Patents

Procede et dispositif de distribution de gaz dans une chambre de traitement de plasma a densite elevee garantissant la formation d'un plasma uniforme Download PDF

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Publication number
WO2001083852A1
WO2001083852A1 PCT/US2001/011733 US0111733W WO0183852A1 WO 2001083852 A1 WO2001083852 A1 WO 2001083852A1 US 0111733 W US0111733 W US 0111733W WO 0183852 A1 WO0183852 A1 WO 0183852A1
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WO
WIPO (PCT)
Prior art keywords
processing chamber
plasma processing
gas
arms
plasma
Prior art date
Application number
PCT/US2001/011733
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English (en)
Inventor
Wayne L. Johnson
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to AU2001255309A priority Critical patent/AU2001255309A1/en
Publication of WO2001083852A1 publication Critical patent/WO2001083852A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45589—Movable means, e.g. fans
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

Definitions

  • 60/144,880 filed July 20, 1999, entitled “Electron Density Measurement And Plasma Process Control System Using A Microwave Oscillator Locked To An Open Resonator Containing the Plasma”; U.S. Provisional Application Serial No. 60/144,833, filed July 21, 1999, entitled “Electron Density Measurement And Plasma Process Control System Using Changes In The Resonate Frequency Of An Open Resonator Containing The Plasma”; U.S. Provisional Application Serial No. 60/144,878, filed July 20, 1999, entitled “Electron Density Measurement And Control System Using Plasma-Induced Changes In The Frequency Of A Microwave Oscillator”; U.S. Provisional Application Serial No.
  • the present invention generally relates to the production of semiconductor wafers and more particularly, to a method of and apparatus for distributing a gas within a high density plasma process chamber to improve the uniformity of a plasma applied to the surface of a semiconductor wafer.
  • a number of steps in the manufacture of semiconductor wafers may use plasma processing. For instance, resist-stripping, etching, depositing, and passivating, may use plasma processing to produce integrated circuits (hereinafter "ICs") on a semiconductor wafer. Because the features of the ICs are so small, a uniform plasma density is required for satisfactory resolution thereof. A high plasma density is also necessary in order to maintain process throughputs within a commercially viable range.
  • ICs integrated circuits
  • RF radio frequency
  • inductive coupling elements include conductive, helical, and solenoidal coils that are place outside of, but in close proximity to, the walls of the process chamber and surround a cylindrically-shaped process chamber.
  • the inductor may also be a planar coil of wire or tubing so as to be placed against the flat top of the cylindrically-shaped process chamber as disclosed in U.S. Patent No. 5,280,154 issued to Cuomo et al.
  • the coils may be excited by a radio-frequency (RF) source such that a time varying magnetic field, in accordance with Faraday's Law, becomes associated therewith.
  • RF radio-frequency
  • the time varying magnetic field produces an electric field that accelerates electrons and it is the acceleration of the electrons which makes the establishment of the plasma possible as disclosed in U.S. Patent No. 4,431,898 issued to Reinberg et al.
  • the contents of the five above-mentioned patents are herein incorporated by reference.
  • a RF field may be produced between a pair of opposed electrodes, wherein the electrodes are nominally parallel to the surface of the semiconductor wafer or wafers to be processed.
  • the semiconductor wafer(s) to be processed are often located on one of the electrodes.
  • Plasma processors often require feed gas or gases to be introduced into the plasma processing chamber.
  • feed gas or gases are introduced into the plasma chamber through gas inlet tubes which are located around the periphery of the region in which the plasma is to be established.
  • a distribution manifold may also be used to introduce gas into a plasma processing chamber. Examples of such plasma processors are disclosed in the '357 patent, U.S. Patent No. 5,624,498 issued to Lee et al. , U.S. Patent No. 5,614,026 issued to Williams, and U.S. Patent Nos. 5,614,055 and 5,976,308 both issued to Fairburn et al.
  • the gas distribution systems of the prior art plasma processors discussed above have a number of drawbacks. More particularly, the feed gas distribution systems of prior art plasma processors are typically fixed with respect to the plasma processing chambers.
  • the gas distributor is immersed in the plasma and is located in relatively close proximity to the semiconductor wafer or wafers to be processed.
  • the gas distributor allows the at least one gas to be introduced into the plasma processing chamber.
  • plural gases it is possible to limit the number of collisions with electrons, ions, atoms, or molecules sustained by the atoms or molecules of one of those gases before the electrons, ions, atoms, or molecules impinge upon the surface of the at least one semiconductor wafer.
  • the spacing between the plural arms of the gas distributor and the semiconductor wafer additionally may be adjusted.
  • the gas distributor is electrically insulated from the rest of the plasma processing chamber and is otherwise designed to facilitate RF biasing so it may be cleaned in situ by RF means.
  • FIG. 1 is a schematic showing the plasma processing chamber of the present invention, including an apparatus for introducing gas into the plasma processing chamber to maintain a uniform plasma flux on the surface of the semiconductor wafer to be processed;
  • FIG. 2 is a bottom plan view of the apparatus for introducing gas into the process chamber to maintain a uniform plasma flux on the surface of the semiconductor wafer to be processed;
  • FIG. 3 is a side elevational view of the apparatus for introducing gas into the process chamber to maintain a uniform plasma flux on the surface of the semiconductor wafer to be processed.
  • FIG. 1 illustrates a plasma processing system including a plasma source 10 and a process chamber 20.
  • a gas is supplied to the process chamber 20 via a shaft 115 and a gas distributor 100 that helps to maintain a uniform plasma flux on the surface of the semiconductor wafer 70 to be processed.
  • the gas distributor 100 is a multi-armed, rotatable, gas dispenser-diffuser.
  • the gas distributor 100 is located within the process chamber 20 to enable the gases to be couple to the RF power.
  • a RF power source 30 is shown on the left-hand side of FIG. 1.
  • the RF power source 30 has an output impedance Rs.
  • the radio-frequency (RF) power source 30 is for supplying radio-frequency (RF) power to a helical coil 40 acting as an inductive coupling element.
  • the coil 40 couples energy into the gas and excites it into a plasma within a plasma region 50 of the process chamber 20.
  • the plasma and energetic and/or reactive particles produced by the plasma e.g., ions, atoms, or molecules
  • FIG. 2 illustrates the underside (i.e. , the side facing a semiconductor wafer 70 to be processed) of the gas distributor 100.
  • the gas distributor 100 is typically mounted above the semiconductor wafer or wafers 70 to be processed within an inductively coupled plasma (hereinafter 'TCP") processor.
  • the ICP processor includes at least one of an electrostatic shield and a bias shield.
  • the gas distributor 100 of the present invention is used to introduce a feed gas into the process chamber 20 in relatively close proximity to the semiconductor wafer or wafers 70 to be processed.
  • the gas distributor 100 includes a number of radially outwardly extending arms 105.
  • the gas distributor 100 illustrated in FIG. 2 has four arms 105.
  • the number of arms 105 may be adjusted according to different design constraints. It is desirable that the number of arms 105 be kept small enough so that the plasma flux at the surface of the semiconductor wafer or wafers 70, when in the presence of the gas distributor 100, is between 60% and 90% (and preferably not less than about 70%) of the plasma flux that would exist in the absence of the gas distributor 100. Applicants believe that four to six symmetrically spaced arms 105 represent the preferred embodiment.
  • Each of the plural arms 105 of the gas distributor 100 shown in FIG. 2 is represented as being rectangular in cross-section, but alternate embodiments use other cross-sections.
  • Each of the plural arms 105 has a predetermined area 120, which is shown in FIG. 2 as being shaded and as delineated by the dashed lines 125.
  • This predetermined area 120 includes a plurality of orifices (not shown individually). The plurality of orifices allow a feed gas to enter the plasma process chamber 20.
  • the orifices need not be of the same size, nor need they be uniformly distributed throughout the predetermined areas 120, shown as being trapezoidal solely for illustrative purposes in FIG. 2.
  • the size, shape, spacing and distribution of the orifices are determined by the requirement that processing be uniform over the entire surface of the semiconductor wafer or wafers 70. It is to be expected that details of the design of the gas dispenser-diffuser apparatus 100 will depend on the particulars of either the inductively coupled plasma (ICP) processor or the electrostatically shielded radio-frequency (ESRF) processor in which the gas distributor apparatus 100 is to operate.
  • ICP inductively coupled plasma
  • ESRF electrostatically shielded radio-frequency
  • the size and spacing of the orifices in the arms 105 of the gas distributor 100 is important to establishing and maintaining a uniform plasma flux. Therefore, the size and spacing of the orifices are chosen so that the feed gas emerging from the orifices provides a uniform plasma flux at the surface of the semiconductor wafer or wafers 70.
  • the gas distributor 100 also includes a hub 110.
  • the hub 110 distributes process gas or gases to the arms 105 so that the process gas or gases may then be dispensed/diffused through the orifices thereof to create a uniform plasma flux that contacts the surface of the semiconductor wafer or wafers 70.
  • the gas distributor 100 connects to a shaft 115 (e.g. , a hollow cylindrical sleeve).
  • the shaft 115 facilitates mounting of the gas distributor 100 on a drive system 200 (see FIG. 1).
  • the drive system 200 may include a motor and a drive train or assembly for rotating the shaft 115 in at least one direction.
  • process gases enter the gas distributor 100 through the shaft 115 and leave the arms 105 of the gas distributor 100 via the plurality of orifices in each arm 105.
  • At least a portion of the shaft 115 may be rotated by the drive system 200 in either clockwise or counterclockwise directions 116.
  • the gas distributor 100 is oriented with the plane of the arms 105 being horizontal and the orifices on the underside of the arms 105.
  • the shaft 115 extends upwardly from the plane of the arms 105.
  • the drive shaft is suspended from a bearing of a type chosen to minimize the generation of particulates (e.g. , a Ferrofluidic ® bearing).
  • the drive system 200 rotates the gas distributor 100 about an axis in either a clockwise or counterclockwise direction 116, as is represented in FIG. 2 by the curved arc with an arrow head at each end.
  • the axis of rotation of the gas distributor 100 is usually vertical and usually coincident with the center of the plasma process chamber 20.
  • the speed of rotation of the gas distributor 100 is not critical to maintaining a uniform distribution of the plasma. Satisfactory performance of the system has been obtained with rotational speeds of approximately 100 revolutions per minute.
  • the drive system 200 is also capable of making the gas distributor 100 translate in an up and down direction (i.e. , the vertical line 130 with an arrow head at each end in FIG. 3) by increasing or decreasing the distance between the gas distributor 100 and a surface of the semiconductor wafer or wafers 70 to be processed.
  • the gas distributor 100 may be fabricated from any one or a combination of the following: (1) a metal (e.g. , aluminum, having an untreated surface, except if necessary to ensure cleanliness); (2) a metal coated with a non-conducting surface film (e.g. , aluminum with an anodized surface); or (3) a non-conducting material.
  • a metal e.g. , aluminum, having an untreated surface, except if necessary to ensure cleanliness
  • a metal coated with a non-conducting surface film e.g. , aluminum with an anodized surface
  • a non-conducting material e.g., aluminum with an anodized surface
  • the gas distributor 100 of the present invention is advantageous for use in both etch and deposition steps related to plasma processing.
  • etch processes which use an electrostatically shielded radio-frequency (hereinafter "ESRF") high density plasma processor at pressures in the order of 1-10 mTorr
  • the plasma densities are typically greater than the plasma densities associated with capacitively excited plasma processors by a factor of 50 to 100.
  • the high densities are necessary to achieve a commercially viable etch rate.
  • the high densities assure a sufficiently great ion flux at the bottom of small features (e.g., ⁇ 0.5 micrometer) of the IC formed from the semiconductor wafer 70.
  • the high plasma densities have the drawback that any atom or molecule that enters the plasma processing chamber 20 through either a typical gas inlet tube or a conventional gas distribution manifold and that impinges on the surface of a semiconductor wafer will have experienced 50 tolOO times the number of collisions that an atom or molecule traversing a similar path through the less dense plasma of a capacitively coupled plasma processor would have experienced.
  • the relative concentration of the atoms, molecules, and ions arising from the feed gas, which impinge upon the surface of the semiconductor wafer 70 (or the wall of other substrates), will not be the same as the relative concentration of the atoms, molecule, and ions arising from the feed gas in a plasma processor that operates at a lower pressure.
  • the dissociation of molecules in the feed gas subjected to the higher plasma densities will be many times greater than the dissociation of molecules in the feed gas in plasma processors operating at lower pressures. Thus, the plasma processing done at higher plasma densities may not to proceed in the optimum way.
  • One way to reduce the number of electron collisions that the feed gas atoms or molecules undergo before impinging on the substrate, and consequently improving the efficacy of the plasma processing, is by introducing the feed gas closer to the wafer surface, although still within the plasma, by using the gas distributor 100 of the present invention.
  • the same above-described considerations with respect to atoms and molecules in the etching process apply to the atoms and molecules in the deposition processes.
  • the molecules in a molecular feed gas are substantially dissociated in the plasma before those molecules impinge upon the surface of the semiconductor wafer 70.
  • Estimates predict (and measurements confirm) that in ESRF plasma processors operating at high plasma densities (e.g. , those approximately greater than 10 12 cm 3 ) and at low pressures (e.g. , those less than 10 mTorr), more than 80% of the molecules in the molecular feed gas will be dissociated before impinging upon the surface of the semiconductor wafer 70.
  • the molecules that become deposited have a low surface mobility after landing on the surface of the semiconductor wafer. This is because the chemical groups that tend to inhibit incorporation of the molecule into the surface of the semiconductor wafer 70 are removed when the molecular bond is broken. The reduced surface mobility results in a deposited layer containing a greater concentration of defects.
  • the problem of a deposition layer containing a greater concentration of defects can be alleviated by injecting the feed gas closer to the surface of the semiconductor wafer 70, although still within the plasma, using the adjustable gas distributor 100 according to the present invention.
  • the gas distributor 100 is electrically insulated from the rest of the process chamber 20 and is otherwise designed to accommodate a suitable RF biasing so that the gas distributor 100 may be cleaned in situ by RF power at the same time that the rest of the process chamber 20 is being cleaned. In other words, only a single cleaning procedure is necessary for the entire process chamber 20 and its contents.
  • Alternate embodiments of the plasma source 10 include at least two gas distributors 100.
  • each gas distributor 100 rotates about a shaft laterally displaced from the other, wherein the amount of displacement is either fixed or dynamically variable.
  • Plural sets of arms 105 can likewise be rotated by plural concentric shafts 115, either rotated in the same or opposite directions.
  • the speed of rotation of each set of arms 105 need not be the same as every other set of arms 105.
  • the number of arms 105 and the sites and locations of the orifices may be different in different sets of arms 105.

Abstract

L'invention concerne une chambre de traitement de plasma améliorée (20) comprenant plusieurs bras rotatifs (105). Chaque bras rotatif (105) de cette pluralité de bras rotatifs (105) comporte plusieurs orifices servant à distribuer au moins un gaz de traitement dans la chambre de traitement de plasma (20). Dans un mode de réalisation, le distributeur de gaz (100) est immergé dans le plasma et placé à proximité relative d'une tranche à semi-conducteur (70) ou de tranches à traiter. Dans un autre mode de réalisation, l'espacement entre le distributeur de gaz (100) et la tranche (70) peut en outre être réglé. Dans un mode de réalisation alternatif, le distributeur de gaz (100) est isolé électriquement du reste de la chambre de traitement de plasma (20). Il contribue par ailleurs à faciliter la polarisation HF de façon à pouvoir être nettoyé in situ par une unité HF (30).
PCT/US2001/011733 2000-04-28 2001-04-27 Procede et dispositif de distribution de gaz dans une chambre de traitement de plasma a densite elevee garantissant la formation d'un plasma uniforme WO2001083852A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001255309A AU2001255309A1 (en) 2000-04-28 2001-04-27 Method and apparatus for distributing gas within high density plasma process chamber to ensure uniform plasma

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US20035400P 2000-04-28 2000-04-28
US60/200,354 2000-04-28

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Publication Number Publication Date
WO2001083852A1 true WO2001083852A1 (fr) 2001-11-08

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1693880A3 (fr) * 2005-02-16 2006-09-27 Applied Materials, Inc. Support par gravité pour diffuseur
JP2010013733A (ja) * 2004-09-20 2010-01-21 Applied Materials Inc 拡散器重力支持体
US8956456B2 (en) 2009-07-30 2015-02-17 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Apparatus and method for atomic layer deposition
US9200368B2 (en) 2004-05-12 2015-12-01 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US9297077B2 (en) 2010-02-11 2016-03-29 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Method and apparatus for depositing atomic layers on a substrate
US9416449B2 (en) 2010-02-18 2016-08-16 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Continuous patterned layer deposition
US9580804B2 (en) 2007-06-22 2017-02-28 Applied Materials, Inc. Diffuser support
US9761458B2 (en) 2010-02-26 2017-09-12 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Apparatus and method for reactive ion etching
US11549180B2 (en) 2008-08-27 2023-01-10 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Apparatus and method for atomic layer deposition

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5009738A (en) * 1989-04-28 1991-04-23 Leybold Aktiengesellschaft Apparatus for plasma etching
JPH0621007A (ja) * 1992-07-01 1994-01-28 Seiko Epson Corp ドライエッチング装置
JPH0936046A (ja) * 1995-07-19 1997-02-07 Fujitsu Ltd 気相化学処理装置及び方法
WO1999019526A2 (fr) * 1997-10-15 1999-04-22 Tokyo Electron Limited Appareil et procede de reglage de la distribution densimetrique d'un plasma

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5009738A (en) * 1989-04-28 1991-04-23 Leybold Aktiengesellschaft Apparatus for plasma etching
JPH0621007A (ja) * 1992-07-01 1994-01-28 Seiko Epson Corp ドライエッチング装置
JPH0936046A (ja) * 1995-07-19 1997-02-07 Fujitsu Ltd 気相化学処理装置及び方法
WO1999019526A2 (fr) * 1997-10-15 1999-04-22 Tokyo Electron Limited Appareil et procede de reglage de la distribution densimetrique d'un plasma

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10262837B2 (en) 2004-05-12 2019-04-16 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US9200368B2 (en) 2004-05-12 2015-12-01 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US10312058B2 (en) 2004-05-12 2019-06-04 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
JP2010013733A (ja) * 2004-09-20 2010-01-21 Applied Materials Inc 拡散器重力支持体
EP1693880A3 (fr) * 2005-02-16 2006-09-27 Applied Materials, Inc. Support par gravité pour diffuseur
US9580804B2 (en) 2007-06-22 2017-02-28 Applied Materials, Inc. Diffuser support
US11549180B2 (en) 2008-08-27 2023-01-10 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Apparatus and method for atomic layer deposition
US8956456B2 (en) 2009-07-30 2015-02-17 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Apparatus and method for atomic layer deposition
US9297077B2 (en) 2010-02-11 2016-03-29 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Method and apparatus for depositing atomic layers on a substrate
US9803280B2 (en) 2010-02-11 2017-10-31 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Method and apparatus for depositing atomic layers on a substrate
US10676822B2 (en) 2010-02-11 2020-06-09 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Method and apparatus for depositing atomic layers on a substrate
US9416449B2 (en) 2010-02-18 2016-08-16 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Continuous patterned layer deposition
US9761458B2 (en) 2010-02-26 2017-09-12 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Apparatus and method for reactive ion etching

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