WO2001079810A1 - Appareil a faisceaux d'ions focalises et procede de detachement d'un morceau d'echantillon - Google Patents

Appareil a faisceaux d'ions focalises et procede de detachement d'un morceau d'echantillon Download PDF

Info

Publication number
WO2001079810A1
WO2001079810A1 PCT/JP2001/003173 JP0103173W WO0179810A1 WO 2001079810 A1 WO2001079810 A1 WO 2001079810A1 JP 0103173 W JP0103173 W JP 0103173W WO 0179810 A1 WO0179810 A1 WO 0179810A1
Authority
WO
WIPO (PCT)
Prior art keywords
sample
ion beam
focused ion
small pieces
pickup
Prior art date
Application number
PCT/JP2001/003173
Other languages
English (en)
Japanese (ja)
Inventor
Toshiaki Fujii
Toshio Kodama
Original Assignee
Seiko Instruments Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc. filed Critical Seiko Instruments Inc.
Publication of WO2001079810A1 publication Critical patent/WO2001079810A1/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/02—Devices for withdrawing samples
    • G01N1/04—Devices for withdrawing samples in the solid state, e.g. by cutting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components

Definitions

  • the present invention relates to a focused ion beam processing apparatus, which performs a bright sputter etching process on a sample surface such as a semiconductor integrated circuit or a ceramic substrate, and a small sample from the sample surface.
  • the method relates to a method of separating a separated sample and removing a separated small sample.
  • TEM transmission electron microscope
  • the first conventional fabrication method is Microscopy of Semiconducting Material Conferenc e, Oxford, 1989, pp. 501-506.
  • a chip with a length of several mm and a width of 100 to 500 ⁇ is cut out using a dicing saw, attached to a standard mesh for TEM observation, and then focused. It is processed to a desired thickness by ion beam sputter etching.
  • dicing is used to reduce the size of the sample, but due to mechanical processing, it can only be processed from a width of about 100 to 500 Aim.
  • the width must be at least about 1 ⁇ or less, and focus to that width. It must be processed by an ion beam. Therefore, it took a long time to prepare the sample.
  • a technique for overcoming the drawback of the first conventional manufacturing method there is a technique disclosed in Japanese Patent Application Laid-Open No. 5-52721.
  • a focused ion beam 1 is irradiated from at least two different angles to sputter-etch around the TEM observation piece 3 including the observation target 2.
  • the needle 4 for picking up is brought into contact with the small piece 3 for TEM observation without separating from the sample by leaving the remaining portion 5.
  • a thin film is formed by a deposition function of the focused ion beam apparatus so that the needle 4 and the TEM observation small piece 3 are connected, and the needle 4 and the TEM observation small piece 3 are attached.
  • the remaining portion 5 is subjected to sputter etching to separate the sample from the small piece 3 for TEM observation.
  • the sputter etching process using the focused ion beam 1 to be performed to produce the small pieces 3 for TEM observation has been greatly shortened.
  • the production of small pieces for TEM observation using an actual focused ion beam system involves rough digging to separate the small pieces from the sample substrate, and finishing to make the small pieces even thinner so that a specified location can be observed by TEM.
  • Can be roughly divided into Rough digging does not require much processing precision because it is sputter-etched at a location distant from the TEM observation site, but generally requires a long processing time because the volume removed by sputter-etching is large.
  • the finishing time is shorter than that of rough digging because the volume of sputter etching is small. Therefore, rough digging, which does not require much processing precision, is performed by unmanned operation, such as at night, to devise ways to reduce the time required for human processing. In addition, with the improvement of the processing accuracy of the equipment, finishing processing has also been performed automatically.
  • an object of the present invention is to provide an apparatus and a method for removing small pieces for TEM observation that have been subjected to predetermined processing and mechanically separated from a sample substrate.
  • a sample chamber which is a vacuum vessel, a sample stage on which a sample substrate is placed and which can move at least in a horizontal direction and can be tilted,
  • a focused ion beam column comprising an ion source for generating a beam, an ion beam optical system for focusing and deflecting and scanning the ion beam generated from the ion source, and focused ions generated from the focused ion beam column on a sample substrate Detects secondary charged particles generated when irradiating a beam.
  • a focused ion beam processing device consisting of a detector and a detector that uses a focused ion beam to cut out small pieces from a sample using a sputtering ring etching function
  • the first step determining the processing positions of a plurality of small pieces to be cut out from the sample, and sequentially sputtering the periphery of each of the small pieces to be cut out.
  • a third step of cutting out the plurality of small pieces to be cut out from the sample In the first step of determining the processing positions of a plurality of small pieces to be cut out from the sample, and sequentially sputtering the periphery of each of the small pieces to be cut out.
  • a second step of performing a cutting process, and inclining the sample stage on which the sample is placed, and sequentially s
  • a sample chamber which is a vacuum vessel, a sample stage on which a sample substrate is placed and which can move at least in a horizontal direction and can be tilted, an ion source for generating a light beam, and A focused ion beam column composed of an ion beam optical system for focusing and deflecting and scanning an ion beam generated from an ion source; and a sample substrate irradiated with a focused ion beam generated from the focused ion beam column.
  • a detector that detects the secondary charged particles generated, and a focused ion beam device consisting of a pickup that picks up small pieces separated from the surface of the sample substrate by sputter etching of the focused ion beam
  • the processing positions of multiple small pieces cut out from the sample are determined.
  • the sample chamber is mounted on a sample holder consisting of a vacuum chamber and a sample holder consisting of a sample holder and a holder for holding a plurality of small pieces taken out of the sample.
  • a sample stage that can move and tilt in the direction, an ion source that generates an ion beam, and a focused ion beam column that includes an ion beam that focuses and deflects and scans the ion beam generated from the ion source.
  • the secondary generated when the sample substrate is irradiated with the focused ion beam generated from the focused ion beam column Using a focused ion beam device consisting of a detector that detects charged particles and a sputter etching process of a focused ion beam from the surface of the sample substrate that picks up small pieces separated by using a focused ion beam, sputtering using a focused ion beam.
  • a first step of determining processing positions of a plurality of small pieces to be cut out of the sample a second step of sequentially performing a sputtering process around each of the small pieces to be cut out, and an etching process
  • a third step of inclining the mounted sample stage and sequentially sputtering and etching the bottom of each of the small pieces to be cut out and the tip end position of the pickup by operating one of the small pieces to be cut out by operating the sample stage. Ij, and take out one of the small pieces to be cut out by the pickup.
  • a sample chamber which is a vacuum vessel and a sample holder including a sample holding portion for holding a sample and a plurality of small pieces taken out from the sample are attached and mounted.
  • a sample stage that can be placed and moved at least in a horizontal direction and can be tilted, a ion source that generates an ion beam, and an ion beam optical system that focuses, deflects and scans the ion beam generated from the ion source
  • the present invention proposes a focused ion beam processing apparatus characterized in that the tip of the cup is composed of two claws, and these claws move to pick up the small piece by sandwiching the small piece.
  • the pickup device is attached to a sample chamber, which is a vacuum chamber, and a sample holder including a sample holding portion and a holding portion for holding a plurality of small pieces extracted from the sample.
  • a sample stage that can be mounted and at least horizontally moved and tilted, an ion source that generates an ion beam, and an ion beam optic that focuses and scans the ion beam generated from the ion source.
  • a focused ion beam column made of a system, a detector for detecting secondary charged particles generated when the sample substrate is irradiated with the focused ion beam generated from the focused ion beam column, and a focused ion from the surface of the sample substrate.
  • the tip of the flop is composed of two claws, by sandwiching the piece is moving these claws proposes collecting beam ion beam processing apparatus characterized by taking up the pieces.
  • two of the pick-up tips are movable claws, one of which is a movable claw and is connected to the other fixed claw by a rotating shaft.
  • the present invention proposes a mode in which the movable claw moves in a rotational direction about a rotation axis, and the movable claw is controlled by a piezoelectric actuator provided between the movable claw and the fixed claw.
  • the material is a shape memory alloy
  • a heater for controlling the temperature of the shape memory alloy portion of the claw is provided, and the claw is opened and closed by the temperature control by the heater.
  • the nail is made of a conductive material, and a power source is connected between the nail and the sample held in the test holder, An embodiment is proposed in which a current flowing when the nail and the sample come into contact is detected to avoid collision between the tip of the nail and the sample. Further, the first and second embodiments may be combined with the third embodiment.
  • a sample chamber which is a vacuum vessel, and a sample holder comprising a sample holding section and a holding section ′ for holding a plurality of small pieces taken out of the sample, are mounted.
  • a sample stage capable of moving and tilting at least in a horizontal direction; a source for generating an ion beam; and an ion beam optical system for converging and scanning the ion beam generated from the ion source.
  • a focused ion beam apparatus comprising a pickup for picking up small pieces separated by using a sputtering process
  • the tip of the pick-up Has a needle shape, and picks up the small piece by attaching the small piece to the tip of the needle-shaped pick-up.
  • a tip is proposed in which the tip is a needle made of an insulator, and the small piece is attracted and picked up by static electricity generated by charging the tip of the needle. .
  • a means for rubbing against another insulator to charge ⁇ 'As a second means for charging the tip, by irradiating a focused ion beam Means for charging the needle tip is proposed.
  • an electron beam irradiation device is attached to the sample chamber, and the tip of the needle is charged by irradiating the tip of the needle with the electron beam of the electron beam irradiation device.
  • a sample chamber which is a vacuum vessel
  • a sample holder which is provided with a sample holding portion and a holding portion for holding a plurality of small pieces taken out of the sample, are mounted and placed.
  • a sample stage that can move and tilt at least in a horizontal direction, an ion source that generates an ion beam, and a focused ion beam that includes an ion beam optical system that focuses and deflects and scans the ion beam generated from the ion source
  • a pick-up for picking up small pieces separated by using a chucking process, and a deposit on the sample surface at the same time as the focused ion beam irradiation in the sample chamber.
  • a gas introduction device for depositing a conductive deposit in the focused ion beam irradiation area by spraying a gas serving as a raw material is attached, and the tip of the pickup is made of a needle made of a conductive material.
  • a power supply is connected between the sample substrates, and the needle and the small piece separated from the sample substrate are brought into close contact with each other, and a conductive substance is deposited so as to connect the needle and the small piece.
  • the output current value of the power source exceeds a certain value, the deposition of the conductive substance is terminated, and the small piece is taken out by utilizing the fact that the needle and the small piece are connected.
  • a mode is proposed in which a second operation of moving between the position and a second position that is out of the field of view for observation processing with a normal focused ion beam is possible.
  • the present invention proposes a mode in which the direction of movement of the tip of the pickup coincides with the horizontal and vertical directions on the observation image.
  • a sample chamber which is a vacuum vessel
  • a sample holder which includes a sample holding portion for holding a sample and a holding portion for holding a plurality of small pieces extracted from the sample
  • a sample stage that can be placed and moved at least in the horizontal direction and can be tilted, an ion source that generates an ion beam, and an ion beam optical system that focuses, deflects, and scans the ion beam generated from the ion source.
  • a focused ion beam column a detector for detecting secondary charged particles generated when the sample substrate is irradiated with the focused ion beam generated from the focused ion beam column, and a focused ion beam from the surface of the sample substrate.
  • a focused ion beam system consisting of a pickup that picks up small pieces separated by using a spa
  • a sample transporter for taking out a sample held in a sample container, placing the sample on the sample holder 13 of the sample holder placed outside the sample chamber, and being attached to the sample chamber.
  • a load lock chamber having a gate valve for opening and closing between the atmosphere side door and the vacuum chamber; and transferring the sample holder from outside the sample chamber to the sample stage of the sample chamber through the load lock chamber.
  • the sample holder transporter Holding the sample holder transporter, taking out the sample held in the sample container by the sample transporter, placing the sample holder in the sample holder of the sample holder placed outside the sample chamber, The sample holder holding the sample is transported to the load lock chamber at atmospheric pressure by the sample holder transporter, and the air lock side door of the load lock chamber is closed.
  • the load lock chamber is evacuated, the degree of vacuum in the ⁇ '-drop chamber is made substantially equal to the degree of vacuum in the sample chamber, the gate valve is opened, and the sample placed in the load lock chamber is opened.
  • the holder is transferred to the sample stage in the sample chamber by the sample holder transporter, and One or a plurality of small pieces are cut out from the sample by irradiating a bundle ion beam, the small pieces are picked up by the pickup, transferred to the small piece holder on the sample holder, and the sample holder is transferred to the sample holder transporter.
  • a focused ion beam application method wherein the sample held in the sample holder on the sample holder by the sample transporter is transferred to the sample container.
  • a device is proposed. BRIEF DESCRIPTION OF THE FIGURES
  • Figure 1 shows an example of processing in the second conventional manufacturing method.
  • Figure 2 shows the focused ion beam column and control power supply.
  • FIG. 3 is a conceptual diagram relating to the tilt axis of the sample stage used in the focused ion beam device of the present invention.
  • FIG. 4 shows a conceptual diagram of the 'pickup' used in the present invention.
  • FIG. 5 shows a processing example in the present invention.
  • FIG. 6 shows an embodiment of the pickup.
  • FIG. 7 shows an embodiment in addition to the pickup.
  • FIG. 8 is an explanatory view of the moving direction of the tip of the pickup.
  • FIG. 9 shows an embodiment of the sample holder.
  • FIG. 10 shows a configuration example of the device according to the present invention.
  • FIG. 2 shows an example of a focused ion beam column used in the present invention.
  • Focused ion beam column mainly consists of ion source section 11 and condenser lens 1 2, consisting of a blanking electrode 13, a movable diaphragm 14, a deflection electrode 15, and an objective lens 16.
  • a blanking electrode 13 a blanking electrode 13
  • a movable diaphragm 14 a deflection electrode 15
  • an objective lens 16 a lens for focusing a beam of light.
  • a liquid metal gallium is generally used as the ion source 11.
  • the liquid metal gallium stored in the reservoir is supplied to the needle-shaped emitter by surface tension.
  • reservoirs and emitters can be overheated by filaments.
  • An electric field is applied to the emitter section by one or more electrodes, and gallium stored in the emitter section is extracted as an ion beam.
  • the emitter is accelerated by this electric field because a high voltage of about +30 kV is applied to the ground potential.
  • FIG. 2 shows an Einzel's-type lens in which a low voltage and a ground potential are connected to three electrodes, but this is only an example, and other evening lenses may be used.
  • the objective lens 16 is arranged at the position closest to the sample, the position can be changed according to the required performance and function.
  • the movable aperture 14 has a plurality of through-holes having different diameters.
  • the aperture control section controls the position of the through-hole, and the used through-hole is switched. By passing the ion beam through each through hole, the amount of the ion beam reaching the sample, that is, the sample current can be changed. In addition, the position of the through hole can be adjusted so that the position matches the center of the ion beam.
  • the blanking electrode 13 can generate a large electric field between the two electrodes.
  • the same potential usually ground potential
  • the ion beam reaches the sample.
  • a large electric field is generated by applying a signal with a large potential difference to each of the blanking electrodes 13,
  • the on-beam is largely deflected, hits a shield such as a movable diaphragm, and the ion beam does not reach the sample.
  • the deflecting electrode 15 is composed of at least two pairs of electrodes facing each other, and the trajectory of the ion beam is two-dimensionally controlled by the electric field generated between the electrodes.
  • the ion source, each electrode, and the movable diaphragm are controlled by an ion source control power supply 18, a capacitor lens control power supply 19, a blanking signal and scanning signal generator 20, an objective lens control power supply 22, and a movable diaphragm control power supply 21. .
  • Each control power supply is controlled by a computer 17 '.
  • signals applied to the blanking electrode and the deflection electrode are generated from the scanning signal generator 20. This makes it possible to determine whether or not to irradiate the sample with the ion beam according to the sample irradiation position.
  • the output signal of the detector is input to the scanning signal generator 20 and processed. Observation of the sample surface by detecting the ion beam irradiation position and secondary charged particles generated by ion beam irradiation at the irradiation position with a detector and storing the output signal as an electric signal together Can be.
  • Figure 3 shows a conceptual diagram of the sample stage of the proposed device.
  • the sample stage 31 is movable in at least two axes, horizontal X and Y, and can tilt the sample surface. Further, it may be movable in the vertical Z-axis.
  • the mechanism for tilting is under the function of driving the horizontal and vertical axes. Therefore, when the sample is tilted, the X and Y axes move parallel to the inclined plane, and Z moves in the normal direction to the inclined plane.
  • the detector detects secondary charged particles (electrons or ions) generated by irradiating the sample with the focused ion beam.
  • the gas introduction device is not shown in detail, a container for storing gas or gas raw material, a nozzle for blowing gas onto the sample surface, and a connection between the container and nozzle
  • the gas is the raw material for the deposition film formation by the beam assisted CVD method.
  • the sample is used in the beam assisted CVD method.
  • it is a molecular gas containing the material of the thin film deposited on the surface
  • the gas blown to the sample surface is adsorbed on the sample surface
  • the molecular gas is decomposed by the kinetic energy, and the decomposed gas components are exhausted to the outside of the sample chamber by the vacuum pump, and the solid components remain as a thin film on the sample surface.
  • the sputter etching is performed, so that the deposition rate of the thin film is higher than the sputter etching rate.
  • Cormorants it is necessary to control the introduction amount of the raw material gas, the irradiation amount of the focused ion beam.
  • a plurality of gas introduction devices may be used, or a gas introduction device a having pipes and valves corresponding to a plurality of gas storage containers may be used so that gases can be properly used according to purposes.
  • the sample chamber and the focused ion beam column are evacuated by a vacuum pump.
  • the sample chamber may be provided with a load lock chamber for taking the sample in and out of the chamber without rubbing.
  • FIG. 4 shows the basic configuration of the pickup of the present invention.
  • the tip 41 of the pickup has three axes: an X axis 42 for moving the tip left and right, a Y axis 43 for moving the tip back and forth, and a Z axis 44 for moving the tip up and down.
  • Stage 45 This stage 45 is located in a vacuum chamber, and its control is performed by an actuator or knob located on the atmospheric side (not shown).
  • the case 46 on which this stage 45 is installed is attached to the sample chamber of the focused ion beam device, but the distance between the case 46 and the sample chamber can be changed by the bellows structure 47.
  • an operating position for picking up the small pieces for TEM observation and a retracting position for escaping from the irradiation area of the focused ion beam can be switched by a pickup or a pneumatic device (not shown).
  • the rod 48 connecting the pickup and the stage for moving the peak is supported by the pod support 49 of the case 46, ensuring position repeatability when returning from the retracted position to the operating position. F) and so on.
  • the case 46 and the sample chamber are connected through a large hole so that the vacuum evacuation in the case 46 can be performed without interruption.
  • the pickup tip 41 is made of a conductive material, an insulating material is used for the fixing part 50 to electrically separate the pickup tip 41.
  • the fixing portion 50 since the fixing portion 50 has a very fine shape at the tip portion 41 of the pickup, it can be easily replaced.
  • the conductive pickup tip 41 is electrically connected to a sample 53 via a power source 51 and a current source 52. When the tip 41 of the pickup contacts the surface of the sample 53, a current flows. By detecting the current with the current detector 52, the contact between the pickup end 41 and the sample 53 can be confirmed.
  • Figure 5 shows an example of rough digging by focused ion beam and sputter etching to separate a small piece for TEM observation from a sample substrate.
  • the cross section of the sample substrate is to be observed by TEM.
  • all sides are subjected to a sputtering etching process so as to surround a desired sectional observation region.
  • the sample stage is tilted, and a sputter etching process is performed to separate the small pieces for TEM observation from the sample substrate obliquely.
  • This rough digging process has a large processing volume to be sputter-etched. Therefore, unmanned driving is performed at night or on holidays.
  • the processing frame is determined so as to leave the desired TEM observation area, and a mark whose position relative to the processing frame is clear is determined. At this time, if there is no appropriate mark, It is manufactured by the processing function of the focused ion beam device. As a result, the position of the mark and the relative position of the mark and the processing frame are stored.
  • unmanned automatic processing starts. The sample stage first moves to the mark position, and confirms the mark position by the pattern recognition function.
  • a processing frame whose position relative to the mark position is clear is arranged, and processing is performed according to a predetermined order.
  • the process of separating the sample substrate and the small piece for TEM observation is the last step of manufacturing each small piece for TEM observation, but may be performed for each small piece, or only the processing for separation may be left at the end . If left at the end, the specimen for TEM observation remains with only the processing to be separated. In this state, processing to tilt and separate the sample stage is performed. In this case, since the sample stage can be tilted only once, the time required for processing can be reduced.
  • the first embodiment has a tweezer structure shown in FIG.
  • the tip of the pickup has two parts, a fixed part 61 and a movable part 62.
  • the fixing part 61 has a structure connected to the pickup body.
  • the movable part 62 is connected to the fixed part 61 via a rotating shaft 63.
  • the movable part 62 is controlled by an actuator 64. By controlling the actuator 64, a small sample can be inserted.
  • the fixing portion 61 is made of a conductive material, and the fixing portion 61 is connected to a power source different from the power source of the actuator 64. The other end of this power supply is connected to the sample
  • the surface of the sample substrate 53 is brought into contact with the tip portion 41 of the pickup at the mark processing position.
  • collision between the sample substrate 53 and the pickup distal end portion 41 is avoided by detecting a current flowing when the sample substrate 53 and the pickup distal end portion 41 are electrically connected to each other. Then, by re-confirming the three-dimensional position of the pickup distal end portion 41, it is possible to more reliably pick up the small sample for TEM observation. In addition, it can be performed automatically without using a focused ion beam observation function.
  • a needle made of an insulating material is used at the tip of the pickup.
  • a focused ion beam is applied to the needle made of an insulating material to cause a chuck.
  • the small pieces for TEM observation have high resistance because they are separated from the sample substrate, and are attracted to the needle by electrostatic force.
  • the sample stage is perpendicular to the needle or tilted at an angle suitable for operation. With the tip of the pickup and the TEM sample piece in contact, move the sample stage in the direction normal to this inclined surface. The sample is taken up. Actually, the position of the TEM sample piece does not change and the sample substrate side is separated.
  • a needle made of a conductive material is used at the tip of the pickup.
  • a conductive film is formed so as to connect the needle and the small piece for TEM observation.
  • both ends of one power supply are connected to the needle and the sample surface.
  • the load resistance of the power supply is reduced, and the output current is increased.
  • the current value exceeds a certain value it indicates that the cross-sectional area of the formed conductive film is sufficient to support a small piece for TEM observation. Therefore, the deposition is terminated.
  • the power supply may be DC or AC, but the optimum conditions are determined in consideration of the impedance between the sample substrate, the TEM observation piece, and the tip of the pickup. If the DC resistance is large, use an AC signal to handle it.
  • the tip of the pickup has a pin set portion 65 made of a shape memory alloy and a heater 66 for changing the temperature of the tweezer portion 65 and a temperature setting of the heater 66.
  • Row Control power supply 67 In the example of FIG. 7A, the pin set section 65 is closed because the control power supply 67 'is in the stopped state.
  • FIG. 7 (b) when the control power supply 67 is in a movable state, the tweezers 65 is set to a predetermined temperature by the heater 66 and is opened.
  • the method of moving the sample stage for picking up the TEM observation sample is the same as in the first and second embodiments.
  • the horizontal movement XY axis of the sample 72 is arranged along the vertical and horizontal directions of the observation image. Therefore, can the movement of the sample 72 be intuitively recognized in the observation image? ing.
  • the horizontal movement XY axis of the pickup tip 71 is different in angle from the horizontal movement axis of the sample 72. So, Pickup Tip 7
  • the observation image is rotated, and the length and width of the observation image are aligned with the horizontal movement axis of the pick-up tip 71. By doing so, the operator can intuitively move the pick-up tip position while watching the observation image.
  • FIG. 9 shows an example of a sample holder used in the present invention.
  • the sample holder 81 includes a sample holding section 83 for holding a sample 82 and a small piece holding section 85 for holding a plurality of small pieces 84.
  • the bottom surface of the sample holder 81 is flat like a semiconductor wafer.
  • the handler can be provided with an adsorption function such as an electrostatic chuck so that it can be automatically transferred.
  • the sample is held on the sample holder and placed on the sample stage, or the wafer set in the wafer cassette is taken out and transported by an e-handler or the like, and transported to the sample stage. It is common to place them on
  • the sample holder shown in Fig. 9 can be handled with a wafer handler for semiconductor wafers by setting it in a dedicated cassette.
  • the sample holding unit 83 is a TEM / sample holder for fixing a TEM sample.
  • an adhesive is prepared in advance on the holding surface.
  • a deposition film using a focused ion beam is held as a substitute for the adhesive.
  • FIG. 10 shows a configuration of a focused ion beam apparatus using the sample holder 81 shown in FIG. Place the cassette 92 on which the wafer 90 is set in the cassette holder 91 of the equipment.
  • the wafer 90 is taken out from the wafer cassette 92 by the wafer handler 93 and set in the sample holder 83 of the sample holder 81 placed on the atmosphere side. ⁇
  • the sample holder 81 set in the wafer 90 is moved to the low pressure Transfer to lock room 95. 'Open the door 96 on the atmosphere side of the lock chamber 95 and evacuate it by the evacuation system (not shown).
  • the gate valve 97 between the load lock chamber 95 and the sample chamber 98 is opened.
  • the sample holder 81 is set on the sample stage 99 by the sample transport system 94, and the gate valve 97 is closed. Subsequently, the small piece 84 is taken out from the wafer 90 by the above-described method and transferred to the small piece holding portion 85 on the sample holder 81. After the work is completed, the gate valve 97 is opened again, the sample holder 81 is moved to the load lock chamber 95 by the sample transfer system 94, and the gate valve 97 is closed. After the load lock 95 is opened to the atmosphere, the air side door 96 is opened, and the sample holder 81 is taken out of the lock chamber by the sample transfer system 94.
  • the wafer 90 set in the sample holder 83 of the sample holder 81 is picked up by the handler 18 and returned to the cassette 92. Subsequently, the small piece transferred to the small piece holding portion 85 on the sample holder 81 is observed and analyzed by an observation-analyzer such as a TEM (1).
  • an observation-analyzer such as a TEM (1).
  • the apparatus and the method according to the present invention it is possible to sequentially take out a plurality of pieces for TEM observation which have been subjected to observation processing and fence processing from a sample in advance. Since the rough digging after deposition for picking up, which is a disadvantage of the conventional method, is eliminated, the ratio of unmanned machining during the process can be increased.
  • the second conventional manufacturing method it is possible to avoid another problem in the second conventional manufacturing method, that is, the problem of consumption of the pickup.
  • the second conventional manufacturing method a small piece is taken out using a deposition as in the third embodiment of the present invention, but the tip of the needle is sputter-etched to separate it. Therefore, there was a problem that the tip of the needle was worn.
  • the methods of the first, second and fourth embodiments of the present invention there is an effect that this problem can be avoided.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Sampling And Sample Adjustment (AREA)

Abstract

L'invention porte sur un appareil et un procédé de détachement d'un morceau séparé d'un substrat échantillon par gravure par rayonnement cathodique au moyen d'un faisceau ionique focalisé. Dans un procédé traditionnel de détachement d'un morceau séparé d'un substrat échantillon, le morceau est fixé à une pince avant d'être totalement séparé du substrat échantillon, la séparation intervenant ensuite naturellement dans la suite du traitement. Il en résulte qu'il est difficile d'automatiser le perçage d'avant-trou pour séparer le morceau du substrat échantillon et que le processus d'usinage ne peut être efficace. Selon cette invention, un échantillon est placé sur un porte-échantillon et les morceaux sont détachés de l'échantillon par un faisceau ionique focalisé, et sont retirés un par un par une pince et transférés sur un porte-pièce du porte-échantillon.
PCT/JP2001/003173 2000-04-13 2001-04-12 Appareil a faisceaux d'ions focalises et procede de detachement d'un morceau d'echantillon WO2001079810A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000-112483 2000-04-13
JP2000112483 2000-04-13

Publications (1)

Publication Number Publication Date
WO2001079810A1 true WO2001079810A1 (fr) 2001-10-25

Family

ID=18624641

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/003173 WO2001079810A1 (fr) 2000-04-13 2001-04-12 Appareil a faisceaux d'ions focalises et procede de detachement d'un morceau d'echantillon

Country Status (2)

Country Link
TW (1) TW494533B (fr)
WO (1) WO2001079810A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI808133B (zh) * 2018-03-30 2023-07-11 日商日立高新技術科學股份有限公司 帶電粒子束裝置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995023960A1 (fr) * 1994-03-01 1995-09-08 Government Of The United States, Represented By The Secretary Of The Department Of Health And Human Services Isolement de materiel cellulaire sous microscope
JPH10340699A (ja) * 1997-06-09 1998-12-22 Jeol Ltd ホルダ搬送装置
JPH11108813A (ja) * 1997-10-03 1999-04-23 Hitachi Ltd 試料作製方法および装置
EP0927880A1 (fr) * 1997-07-22 1999-07-07 Hitachi, Ltd. Procede et dispositif de preparation d'echantillons

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995023960A1 (fr) * 1994-03-01 1995-09-08 Government Of The United States, Represented By The Secretary Of The Department Of Health And Human Services Isolement de materiel cellulaire sous microscope
JPH10340699A (ja) * 1997-06-09 1998-12-22 Jeol Ltd ホルダ搬送装置
EP0927880A1 (fr) * 1997-07-22 1999-07-07 Hitachi, Ltd. Procede et dispositif de preparation d'echantillons
JPH11108813A (ja) * 1997-10-03 1999-04-23 Hitachi Ltd 試料作製方法および装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI808133B (zh) * 2018-03-30 2023-07-11 日商日立高新技術科學股份有限公司 帶電粒子束裝置

Also Published As

Publication number Publication date
TW494533B (en) 2002-07-11

Similar Documents

Publication Publication Date Title
US10283317B2 (en) High throughput TEM preparation processes and hardware for backside thinning of cross-sectional view lamella
JP5090255B2 (ja) 原位置でのｓｔｅｍサンプル作製方法
JP5600371B2 (ja) 荷電粒子ビーム処理のための保護層のスパッタリング・コーティング
US7297965B2 (en) Method and apparatus for sample formation and microanalysis in a vacuum chamber
JP5350605B2 (ja) サンプルの作製
US7423263B2 (en) Planar view sample preparation
US20060261270A1 (en) Method for preparing a sample for electron microscopic examinations, and sample supports and transport holders used therefor
JP5442417B2 (ja) 荷電粒子線装置及び試料観察方法
US20020166976A1 (en) Beam as well as method and equipment for specimen fabrication
JP2708547B2 (ja) デバイス移植方法
JP2018201022A (ja) 基板接合装置および基板接合方法
WO2001041181A9 (fr) Appareil de lissage par faisceau d'ions en grappes gazeuses
US6870161B2 (en) Apparatus for processing and observing a sample
US20120071003A1 (en) Vacuum Processing Apparatus, Vacuum Processing Method, and Micro-Machining Apparatus
US12007344B2 (en) Method for cross-section sample preparation
JP2004087174A (ja) イオンビーム装置およびイオンビーム加工方法
US7951303B2 (en) Method of fabricating grabbing face of sample grabbing portion
JP3851464B2 (ja) マニピュレータおよびそれを用いたプローブ装置、試料作製装置
US20150075972A1 (en) Detaching Probe from TEM Sample during Sample Preparation
JP3851640B2 (ja) マニピュレータおよびそれを用いたプローブ装置、試料作製装置
WO2001079810A1 (fr) Appareil a faisceaux d'ions focalises et procede de detachement d'un morceau d'echantillon
JP7299812B2 (ja) 複数のリフトアウト針を含むチップ、マイクロマニピュレータ及びマイクロマニピュレータを調製するためのシステム
JP2002334818A (ja) 半導体製造装置、および半導体装置の製造方法
JP2004309499A (ja) 試料作製装置および試料作製方法
JPH0376122A (ja) デバイス移植装置

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): JP KR US

NENP Non-entry into the national phase

Ref country code: JP