WO2001075946A1 - Appareil d'exposition a faisceau multiple comprenant un objectif electronique a axes multiples, objectif electronique a axes multiples pour mettre au point le faisceau electronique multiple, et procede de production d'un appareil a semi-conducteur - Google Patents

Appareil d'exposition a faisceau multiple comprenant un objectif electronique a axes multiples, objectif electronique a axes multiples pour mettre au point le faisceau electronique multiple, et procede de production d'un appareil a semi-conducteur Download PDF

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Publication number
WO2001075946A1
WO2001075946A1 PCT/JP2001/002280 JP0102280W WO0175946A1 WO 2001075946 A1 WO2001075946 A1 WO 2001075946A1 JP 0102280 W JP0102280 W JP 0102280W WO 0175946 A1 WO0175946 A1 WO 0175946A1
Authority
WO
WIPO (PCT)
Prior art keywords
multiaxis
electron lens
electron
lens
exposure apparatus
Prior art date
Application number
PCT/JP2001/002280
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Shinichi Hamaguchi
Takeshi Haraguchi
Hiroshi Yasuda
Original Assignee
Advantest Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corporation filed Critical Advantest Corporation
Priority to JP2001573529A priority Critical patent/JP4451041B2/ja
Priority to KR1020027013246A priority patent/KR20020084291A/ko
Publication of WO2001075946A1 publication Critical patent/WO2001075946A1/ja

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06341—Field emission
    • H01J2237/0635—Multiple source, e.g. comb or array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/1205—Microlenses

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
PCT/JP2001/002280 2000-04-04 2001-03-22 Appareil d'exposition a faisceau multiple comprenant un objectif electronique a axes multiples, objectif electronique a axes multiples pour mettre au point le faisceau electronique multiple, et procede de production d'un appareil a semi-conducteur WO2001075946A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001573529A JP4451041B2 (ja) 2000-04-04 2001-03-22 多軸電子レンズを用いたマルチビーム露光装置、複数の電子ビームを集束する多軸電子レンズ、半導体素子製造方法
KR1020027013246A KR20020084291A (ko) 2000-04-04 2001-03-22 다축전자렌즈를 이용한 멀티빔 노광장치, 복수의 전자빔을집속하는 다축전자렌즈, 반도체소자 제조방법

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2000102619 2000-04-04
JP2000-102619 2000-04-04
JP2000251885 2000-08-23
JP2000-251885 2000-08-23
JP2000-342655 2000-10-03
JP2000342655 2000-10-03

Publications (1)

Publication Number Publication Date
WO2001075946A1 true WO2001075946A1 (fr) 2001-10-11

Family

ID=27342982

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/002280 WO2001075946A1 (fr) 2000-04-04 2001-03-22 Appareil d'exposition a faisceau multiple comprenant un objectif electronique a axes multiples, objectif electronique a axes multiples pour mettre au point le faisceau electronique multiple, et procede de production d'un appareil a semi-conducteur

Country Status (4)

Country Link
JP (1) JP4451041B2 (ko)
KR (1) KR20020084291A (ko)
TW (1) TW495814B (ko)
WO (1) WO2001075946A1 (ko)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002150989A (ja) * 2000-11-13 2002-05-24 Advantest Corp 電子ビーム露光装置及び電子レンズ
JP2007019192A (ja) * 2005-07-06 2007-01-25 Canon Inc 荷電ビームレンズ、及び荷電ビーム露光装置
US7576917B2 (en) 2002-12-17 2009-08-18 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi-axis lens, beam system making use of the compound lens, and method of manufacturing the compound lens
JP4856073B2 (ja) * 2004-05-17 2012-01-18 マッパー・リソグラフィー・アイピー・ビー．ブイ． 荷電粒子ビーム露光システム
JP7105022B1 (ja) 2022-03-31 2022-07-22 株式会社Photo electron Soul 電子銃、電子線適用装置およびマルチ電子ビームの形成方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4601146B2 (ja) * 2000-10-03 2010-12-22 株式会社アドバンテスト 電子ビーム露光装置
EP3906578A1 (en) * 2018-12-31 2021-11-10 ASML Netherlands B.V. Multi-beam inspection apparatus
US11869746B2 (en) * 2019-07-25 2024-01-09 Nuflare Technology, Inc. Multi-beam writing method and multi-beam writing apparatus
US11562879B2 (en) * 2020-09-15 2023-01-24 Nuflare Technology, Inc. Low-blur electrostatic transfer lens for multi-beam electron gun

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0518633A1 (en) * 1991-06-10 1992-12-16 Fujitsu Limited Pattern inspection apparatus and electron beam apparatus
JPH05275322A (ja) * 1992-01-31 1993-10-22 Fujitsu Ltd 電子ビーム装置
JPH08191042A (ja) * 1995-01-11 1996-07-23 Hitachi Ltd 電子線描画装置およびその調整方法
JPH1187206A (ja) * 1997-09-02 1999-03-30 Canon Inc 電子ビーム露光装置及び該装置を用いたデバイス製造方法
US6014200A (en) * 1998-02-24 2000-01-11 Nikon Corporation High throughput electron beam lithography system

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3238487B2 (ja) * 1991-11-14 2001-12-17 富士通株式会社 電子ビーム装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0518633A1 (en) * 1991-06-10 1992-12-16 Fujitsu Limited Pattern inspection apparatus and electron beam apparatus
JPH05275322A (ja) * 1992-01-31 1993-10-22 Fujitsu Ltd 電子ビーム装置
JPH08191042A (ja) * 1995-01-11 1996-07-23 Hitachi Ltd 電子線描画装置およびその調整方法
JPH1187206A (ja) * 1997-09-02 1999-03-30 Canon Inc 電子ビーム露光装置及び該装置を用いたデバイス製造方法
US6014200A (en) * 1998-02-24 2000-01-11 Nikon Corporation High throughput electron beam lithography system

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002150989A (ja) * 2000-11-13 2002-05-24 Advantest Corp 電子ビーム露光装置及び電子レンズ
JP4535602B2 (ja) * 2000-11-13 2010-09-01 株式会社アドバンテスト 電子ビーム露光装置及び電子レンズ
US7576917B2 (en) 2002-12-17 2009-08-18 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi-axis lens, beam system making use of the compound lens, and method of manufacturing the compound lens
US8158954B2 (en) 2002-12-17 2012-04-17 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi-axis lens, beam system making use of the compound lens, and method of manufacturing the compound lens
JP4856073B2 (ja) * 2004-05-17 2012-01-18 マッパー・リソグラフィー・アイピー・ビー．ブイ． 荷電粒子ビーム露光システム
JP2007019192A (ja) * 2005-07-06 2007-01-25 Canon Inc 荷電ビームレンズ、及び荷電ビーム露光装置
JP7105022B1 (ja) 2022-03-31 2022-07-22 株式会社Photo electron Soul 電子銃、電子線適用装置およびマルチ電子ビームの形成方法
JP2023149751A (ja) * 2022-03-31 2023-10-13 株式会社Photo electron Soul 電子銃、電子線適用装置およびマルチ電子ビームの形成方法

Also Published As

Publication number Publication date
JP4451041B2 (ja) 2010-04-14
KR20020084291A (ko) 2002-11-04
TW495814B (en) 2002-07-21

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