JP4451041B2 - 多軸電子レンズを用いたマルチビーム露光装置、複数の電子ビームを集束する多軸電子レンズ、半導体素子製造方法 - Google Patents

多軸電子レンズを用いたマルチビーム露光装置、複数の電子ビームを集束する多軸電子レンズ、半導体素子製造方法 Download PDF

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JP4451041B2
JP4451041B2 JP2001573529A JP2001573529A JP4451041B2 JP 4451041 B2 JP4451041 B2 JP 4451041B2 JP 2001573529 A JP2001573529 A JP 2001573529A JP 2001573529 A JP2001573529 A JP 2001573529A JP 4451041 B2 JP4451041 B2 JP 4451041B2
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Prior art keywords
lens
electron
electron beam
unit
magnetic conductor
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Expired - Fee Related
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JP2001573529A
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English (en)
Japanese (ja)
Inventor
新一 濱口
岳士 原口
洋 安田
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Advantest Corp
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Advantest Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06341—Field emission
    • H01J2237/0635—Multiple source, e.g. comb or array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/1205—Microlenses

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
JP2001573529A 2000-04-04 2001-03-22 多軸電子レンズを用いたマルチビーム露光装置、複数の電子ビームを集束する多軸電子レンズ、半導体素子製造方法 Expired - Fee Related JP4451041B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000102619 2000-04-04
JP2000251885 2000-08-23
JP2000342655 2000-10-03
PCT/JP2001/002280 WO2001075946A1 (fr) 2000-04-04 2001-03-22 Appareil d'exposition a faisceau multiple comprenant un objectif electronique a axes multiples, objectif electronique a axes multiples pour mettre au point le faisceau electronique multiple, et procede de production d'un appareil a semi-conducteur

Publications (1)

Publication Number Publication Date
JP4451041B2 true JP4451041B2 (ja) 2010-04-14

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Family Applications (1)

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JP2001573529A Expired - Fee Related JP4451041B2 (ja) 2000-04-04 2001-03-22 多軸電子レンズを用いたマルチビーム露光装置、複数の電子ビームを集束する多軸電子レンズ、半導体素子製造方法

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Country Link
JP (1) JP4451041B2 (ko)
KR (1) KR20020084291A (ko)
TW (1) TW495814B (ko)
WO (1) WO2001075946A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002110534A (ja) * 2000-10-03 2002-04-12 Advantest Corp 半導体素子製造システム、電子ビーム露光装置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4535602B2 (ja) * 2000-11-13 2010-09-01 株式会社アドバンテスト 電子ビーム露光装置及び電子レンズ
EP1956631B1 (en) 2002-12-17 2012-06-20 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Lens system for a plurality of charged particle beams
WO2005112073A1 (en) * 2004-05-17 2005-11-24 Mapper Lithography Ip B.V. Charged particle beam exposure system
JP2007019192A (ja) * 2005-07-06 2007-01-25 Canon Inc 荷電ビームレンズ、及び荷電ビーム露光装置
EP3906578A1 (en) * 2018-12-31 2021-11-10 ASML Netherlands B.V. Multi-beam inspection apparatus
US11869746B2 (en) * 2019-07-25 2024-01-09 Nuflare Technology, Inc. Multi-beam writing method and multi-beam writing apparatus
US11562879B2 (en) * 2020-09-15 2023-01-24 Nuflare Technology, Inc. Low-blur electrostatic transfer lens for multi-beam electron gun
JP7105022B1 (ja) 2022-03-31 2022-07-22 株式会社Photo electron Soul 電子銃、電子線適用装置およびマルチ電子ビームの形成方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05251315A (ja) * 1991-11-14 1993-09-28 Fujitsu Ltd 電子ビーム装置
JPH05275322A (ja) * 1992-01-31 1993-10-22 Fujitsu Ltd 電子ビーム装置
JPH08191042A (ja) * 1995-01-11 1996-07-23 Hitachi Ltd 電子線描画装置およびその調整方法
JPH1187206A (ja) * 1997-09-02 1999-03-30 Canon Inc 電子ビーム露光装置及び該装置を用いたデバイス製造方法
JPH11317357A (ja) * 1998-02-24 1999-11-16 Nikon Corp 電子線描画装置及びその描画方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0518633B1 (en) * 1991-06-10 1997-11-12 Fujitsu Limited Pattern inspection apparatus and electron beam apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05251315A (ja) * 1991-11-14 1993-09-28 Fujitsu Ltd 電子ビーム装置
JPH05275322A (ja) * 1992-01-31 1993-10-22 Fujitsu Ltd 電子ビーム装置
JPH08191042A (ja) * 1995-01-11 1996-07-23 Hitachi Ltd 電子線描画装置およびその調整方法
JPH1187206A (ja) * 1997-09-02 1999-03-30 Canon Inc 電子ビーム露光装置及び該装置を用いたデバイス製造方法
JPH11317357A (ja) * 1998-02-24 1999-11-16 Nikon Corp 電子線描画装置及びその描画方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002110534A (ja) * 2000-10-03 2002-04-12 Advantest Corp 半導体素子製造システム、電子ビーム露光装置
JP4601146B2 (ja) * 2000-10-03 2010-12-22 株式会社アドバンテスト 電子ビーム露光装置

Also Published As

Publication number Publication date
TW495814B (en) 2002-07-21
WO2001075946A1 (fr) 2001-10-11
KR20020084291A (ko) 2002-11-04

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