JP4451041B2 - 多軸電子レンズを用いたマルチビーム露光装置、複数の電子ビームを集束する多軸電子レンズ、半導体素子製造方法 - Google Patents
多軸電子レンズを用いたマルチビーム露光装置、複数の電子ビームを集束する多軸電子レンズ、半導体素子製造方法 Download PDFInfo
- Publication number
- JP4451041B2 JP4451041B2 JP2001573529A JP2001573529A JP4451041B2 JP 4451041 B2 JP4451041 B2 JP 4451041B2 JP 2001573529 A JP2001573529 A JP 2001573529A JP 2001573529 A JP2001573529 A JP 2001573529A JP 4451041 B2 JP4451041 B2 JP 4451041B2
- Authority
- JP
- Japan
- Prior art keywords
- lens
- electron
- electron beam
- unit
- magnetic conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/063—Electron sources
- H01J2237/06325—Cold-cathode sources
- H01J2237/06341—Field emission
- H01J2237/0635—Multiple source, e.g. comb or array
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/10—Lenses
- H01J2237/12—Lenses electrostatic
- H01J2237/1205—Microlenses
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000102619 | 2000-04-04 | ||
JP2000251885 | 2000-08-23 | ||
JP2000342655 | 2000-10-03 | ||
PCT/JP2001/002280 WO2001075946A1 (fr) | 2000-04-04 | 2001-03-22 | Appareil d'exposition a faisceau multiple comprenant un objectif electronique a axes multiples, objectif electronique a axes multiples pour mettre au point le faisceau electronique multiple, et procede de production d'un appareil a semi-conducteur |
Publications (1)
Publication Number | Publication Date |
---|---|
JP4451041B2 true JP4451041B2 (ja) | 2010-04-14 |
Family
ID=27342982
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001573529A Expired - Fee Related JP4451041B2 (ja) | 2000-04-04 | 2001-03-22 | 多軸電子レンズを用いたマルチビーム露光装置、複数の電子ビームを集束する多軸電子レンズ、半導体素子製造方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4451041B2 (ko) |
KR (1) | KR20020084291A (ko) |
TW (1) | TW495814B (ko) |
WO (1) | WO2001075946A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002110534A (ja) * | 2000-10-03 | 2002-04-12 | Advantest Corp | 半導体素子製造システム、電子ビーム露光装置 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4535602B2 (ja) * | 2000-11-13 | 2010-09-01 | 株式会社アドバンテスト | 電子ビーム露光装置及び電子レンズ |
EP1956631B1 (en) | 2002-12-17 | 2012-06-20 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Lens system for a plurality of charged particle beams |
WO2005112073A1 (en) * | 2004-05-17 | 2005-11-24 | Mapper Lithography Ip B.V. | Charged particle beam exposure system |
JP2007019192A (ja) * | 2005-07-06 | 2007-01-25 | Canon Inc | 荷電ビームレンズ、及び荷電ビーム露光装置 |
EP3906578A1 (en) * | 2018-12-31 | 2021-11-10 | ASML Netherlands B.V. | Multi-beam inspection apparatus |
US11869746B2 (en) * | 2019-07-25 | 2024-01-09 | Nuflare Technology, Inc. | Multi-beam writing method and multi-beam writing apparatus |
US11562879B2 (en) * | 2020-09-15 | 2023-01-24 | Nuflare Technology, Inc. | Low-blur electrostatic transfer lens for multi-beam electron gun |
JP7105022B1 (ja) | 2022-03-31 | 2022-07-22 | 株式会社Photo electron Soul | 電子銃、電子線適用装置およびマルチ電子ビームの形成方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05251315A (ja) * | 1991-11-14 | 1993-09-28 | Fujitsu Ltd | 電子ビーム装置 |
JPH05275322A (ja) * | 1992-01-31 | 1993-10-22 | Fujitsu Ltd | 電子ビーム装置 |
JPH08191042A (ja) * | 1995-01-11 | 1996-07-23 | Hitachi Ltd | 電子線描画装置およびその調整方法 |
JPH1187206A (ja) * | 1997-09-02 | 1999-03-30 | Canon Inc | 電子ビーム露光装置及び該装置を用いたデバイス製造方法 |
JPH11317357A (ja) * | 1998-02-24 | 1999-11-16 | Nikon Corp | 電子線描画装置及びその描画方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0518633B1 (en) * | 1991-06-10 | 1997-11-12 | Fujitsu Limited | Pattern inspection apparatus and electron beam apparatus |
-
2001
- 2001-03-22 WO PCT/JP2001/002280 patent/WO2001075946A1/ja not_active Application Discontinuation
- 2001-03-22 KR KR1020027013246A patent/KR20020084291A/ko not_active Application Discontinuation
- 2001-03-22 JP JP2001573529A patent/JP4451041B2/ja not_active Expired - Fee Related
- 2001-04-04 TW TW090108170A patent/TW495814B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05251315A (ja) * | 1991-11-14 | 1993-09-28 | Fujitsu Ltd | 電子ビーム装置 |
JPH05275322A (ja) * | 1992-01-31 | 1993-10-22 | Fujitsu Ltd | 電子ビーム装置 |
JPH08191042A (ja) * | 1995-01-11 | 1996-07-23 | Hitachi Ltd | 電子線描画装置およびその調整方法 |
JPH1187206A (ja) * | 1997-09-02 | 1999-03-30 | Canon Inc | 電子ビーム露光装置及び該装置を用いたデバイス製造方法 |
JPH11317357A (ja) * | 1998-02-24 | 1999-11-16 | Nikon Corp | 電子線描画装置及びその描画方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002110534A (ja) * | 2000-10-03 | 2002-04-12 | Advantest Corp | 半導体素子製造システム、電子ビーム露光装置 |
JP4601146B2 (ja) * | 2000-10-03 | 2010-12-22 | 株式会社アドバンテスト | 電子ビーム露光装置 |
Also Published As
Publication number | Publication date |
---|---|
TW495814B (en) | 2002-07-21 |
WO2001075946A1 (fr) | 2001-10-11 |
KR20020084291A (ko) | 2002-11-04 |
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