WO2001045169A1 - Module transistor de puissance, amplificateur de puissance, et procedes de fabrication associes - Google Patents

Module transistor de puissance, amplificateur de puissance, et procedes de fabrication associes Download PDF

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Publication number
WO2001045169A1
WO2001045169A1 PCT/SE2000/002500 SE0002500W WO0145169A1 WO 2001045169 A1 WO2001045169 A1 WO 2001045169A1 SE 0002500 W SE0002500 W SE 0002500W WO 0145169 A1 WO0145169 A1 WO 0145169A1
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WO
WIPO (PCT)
Prior art keywords
module
power transistor
conductor pattern
chip
transistor
Prior art date
Application number
PCT/SE2000/002500
Other languages
English (en)
Inventor
Lars-Anders Olofsson
Bengt Ahl
Original Assignee
Telefonaktiebolaget L M Ericsson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefonaktiebolaget L M Ericsson filed Critical Telefonaktiebolaget L M Ericsson
Priority to AU24154/01A priority Critical patent/AU2415401A/en
Priority to JP2001545368A priority patent/JP2003517212A/ja
Priority to EP00987883A priority patent/EP1238428A1/fr
Publication of WO2001045169A1 publication Critical patent/WO2001045169A1/fr

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    • HELECTRICITY
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    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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  • Engineering & Computer Science (AREA)
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  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
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  • Amplifiers (AREA)
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Abstract

L'invention concerne un module transistor de puissance (101, 301, 401, 501) destiné à des application de radiofréquence, notamment à un étage d'amplificateur d'une station de base radio, ou d'un émetteur, au sol, de télévision ou de radio. Ce module transistor de puissance comprend des moyens de support (107, 115, 307, 407), sur lesquels on a monté une puce de transistor de puissance (109, 609, 709), des connexions électriques extérieures (131, 133, 533) saillant du module, ainsi que des connexions électriques intérieures reliées entre la puce et les connexions extérieures, l'une au moins de ces connexions électriques extérieures comprenant un premier motif conducteur agencé sur une feuille métallique souple (120, 520). L'invention concerne en outre un amplificateur de puissance comprenant ce module transistor de puissance, un procédé de fabrication d'un tel amplificateur consistant à connecter électriquement le module à une plaquette de circuit (105) montée au niveau d'un dissipateur thermique (103), et à agencer ce module au niveau du dissipateur thermique. L'invention concerne enfin un amplificateur de puissance fabriqué selon ce procédé.
PCT/SE2000/002500 1999-12-15 2000-12-12 Module transistor de puissance, amplificateur de puissance, et procedes de fabrication associes WO2001045169A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU24154/01A AU2415401A (en) 1999-12-15 2000-12-12 Power transistor module, power amplifier and methods in the fabrication thereof
JP2001545368A JP2003517212A (ja) 1999-12-15 2000-12-12 電力用トランジスタモジュール、電力用増幅器、及びそれらの製造方法(2)
EP00987883A EP1238428A1 (fr) 1999-12-15 2000-12-12 Module transistor de puissance, amplificateur de puissance, et procedes de fabrication associes

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9904595-7 1999-12-15
SE9904595A SE517455C2 (sv) 1999-12-15 1999-12-15 Effekttransistormodul, effektförstärkare samt förfarande för framställning därav

Publications (1)

Publication Number Publication Date
WO2001045169A1 true WO2001045169A1 (fr) 2001-06-21

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Application Number Title Priority Date Filing Date
PCT/SE2000/002500 WO2001045169A1 (fr) 1999-12-15 2000-12-12 Module transistor de puissance, amplificateur de puissance, et procedes de fabrication associes

Country Status (8)

Country Link
US (1) US6580316B2 (fr)
EP (1) EP1238428A1 (fr)
JP (1) JP2003517212A (fr)
CN (1) CN1210796C (fr)
AU (1) AU2415401A (fr)
SE (1) SE517455C2 (fr)
TW (1) TW561801B (fr)
WO (1) WO2001045169A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1995776A1 (fr) * 2006-03-10 2008-11-26 Kabushiki Kaisha Toshiba Appareil de montage de paquet semiconducteur
CN102573374A (zh) * 2010-11-10 2012-07-11 富士通光器件株式会社 电子设备、用于安装器件的方法、以及光通信设备
WO2022238733A1 (fr) * 2021-05-12 2022-11-17 Telefonaktiebolaget Lm Ericsson (Publ) Boîtier de circuit pour applications de puissance

Families Citing this family (22)

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AU2415401A (en) 2001-06-25
CN1409873A (zh) 2003-04-09
TW561801B (en) 2003-11-11
SE517455C2 (sv) 2002-06-11
US6580316B2 (en) 2003-06-17
SE9904595L (sv) 2001-06-16
US20010038310A1 (en) 2001-11-08
EP1238428A1 (fr) 2002-09-11
JP2003517212A (ja) 2003-05-20
SE9904595D0 (sv) 1999-12-15
CN1210796C (zh) 2005-07-13

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