WO2001040875A1 - Appareil et procede de lithographie a deux etages - Google Patents

Appareil et procede de lithographie a deux etages Download PDF

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Publication number
WO2001040875A1
WO2001040875A1 PCT/US2000/042336 US0042336W WO0140875A1 WO 2001040875 A1 WO2001040875 A1 WO 2001040875A1 US 0042336 W US0042336 W US 0042336W WO 0140875 A1 WO0140875 A1 WO 0140875A1
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WO
WIPO (PCT)
Prior art keywords
data collection
substrate
exposure
station
stage
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Application number
PCT/US2000/042336
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English (en)
Inventor
Stephen Roux
Todd Joseph Bednarek
Original Assignee
Silicon Valley Group, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicon Valley Group, Inc. filed Critical Silicon Valley Group, Inc.
Priority to AU32718/01A priority Critical patent/AU3271801A/en
Publication of WO2001040875A1 publication Critical patent/WO2001040875A1/fr

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70733Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask

Definitions

  • This invention relates to an improved lithography apparatus. More specifically, this invention relates to a lithography apparatus capable of high throughput, as well as a method of performing lithography.
  • Lithography is a process used to create features on the surface of substrates.
  • substrates can include those used in the manufacture of flat panel displays, circuit boards, various integrated circuits, and the like.
  • a frequently used substrate for such applications is a semiconductor wafer. While this description is written in terms of a semiconductor wafer for illustrative pu ⁇ oses, one skilled in the art would recognize that this description also applies to other types of substrates known to those skilled in the art.
  • lithography a wafer, which is disposed on a wafer stage, is exposed to an image projected onto the surface of the wafer by exposure optics located within a lithography apparatus. While exposure optics are used in the case of photolithography, a different type of exposure apparatus may be used depending on the particular application. For example, x-ray, ion, electron, or photon lithographies each may require a different exposure apparatus, as is known to those skilled in the art. The particular example of photolithography is discussed here for illustrative purposes only.
  • the projected image produces changes in the characteristics of a layer, for example photoresist, deposited on the surface of the wafer. These changes correspond to the features projected onto the wafer during exposure. Subsequent to exposure, the layer can be etched to produce a patterned layer. The pattern corresponds to those features projected onto the wafer during exposure. This patterned layer is then used to remove exposed portions of underlying structural layers within the wafer, such as conductive, semiconductive. or insulative layers. This process is then repeated, together with other steps, until the desired features have been formed on the surface of the wafer.
  • a layer for example photoresist
  • Substrate alignment (sometimes referred to as characterization) is the process in which data is collected by an overhead alignment camera for the purposes of, for example, target mapping and wafer flatness mapping as well as other calibration functions.
  • data collection is meant to encompass all types of wafer alignment and calibration functions. Thus, while particular types of data collection are described, anything that aids the process of superimposing a subsequent layer more accurately onto the substrate is covered by the phrase data collection as used herein.
  • This data is then used by the exposure optics to ensure that the projected images are accurately focused and projected onto the correct location of the wafer. Once aligned, the wafer is then exposed under the projection optics.
  • the highly sophisticated projection optics include such components as may be necessary in, for example, step-and-scan type tools.
  • Step-and-scan technology works in conjunction with a projection optics system that has a narrow imaging field.
  • This narrow imaging field is unable to project the entire reticle field onto the wafer at once and therefore requires that the wafer and reticle be simultaneously scanned across the imaging area to allow the full reticle pattern to be exposed on the wafer.
  • the wafer stage must be asynchronously stepped between field exposures to allow multiple copies of the reticle pattern to be exposed over the wafer surface. In this manner, the sharpness of the image projected onto the wafer is maximized.
  • minimum feature size is but one measure of a lithography tool's utility. Another critical measure is throughput.
  • Throughput refers to the number of wafers per hour that can be processed by a lithography tool.
  • the time needed to process a given wafer includes both overhead time and exposure time.
  • Overhead time refers to the time needed to perform data collection as well as the loading and unloading of the wafers at the wafer stage.
  • Exposure time refers to the time the wafer is located under the exposure optics.
  • McEachern appears to describe a structure in which overhead time and exposure time can overlap through the use of lithography tool including a platen large enough to accommodate two substrate stages.
  • McEachern' s structure appears to include a single exposure station as well as a single load, unload, and align station.
  • McEachern it appears that if one stage ceases to function, the tool cannot be operated. That is, since both stages move in a circular pattern, if one stage stops it is in the way of the remaining stage, halting operation.
  • Loopstra appears to describe a lithographic tool that includes first and second displacement units as well as first and second object holders.
  • Loopstra' s structure appears to achieve an increase in throughput since alignment and exposure can overlap in time.
  • Loopstra' s structure requires a time-consuming object holder exchange.
  • the present invention increases lithography tool throughput while simultaneously increasing the volume of alignment data collected through the use of two substrate stages.
  • Each substrate stage has associated load/unload and data collection stations.
  • the load/unload and data collection stations are located on either side of an exposure station.
  • the substrate stages are mounted on a common rail such that as a first stage moves away from the exposure station, a second stage can immediately move in to take its place under the exposure apparatus. Through this arrangement, use of the exposure apparatus is maximized.
  • the compromised wafer alignment strategies sometimes employed to increase throughput need not be used. In fact, the parallel nature of the instant invention allows for greater data collection without a corresponding decrease in throughput.
  • the instant invention since the instant invention includes two data collection stations, the complicated wafer exchanges used by the arrangements discussed above under the heading "Related Art" are unnecessary. Furthermore, since each substrate stage works independently of the other substrate stage within its associated load/unload and data collection stations, the lithography tool is capable of operation with only one functioning substrate stage. This results in throughput levels comparable with conventional tools even when the tool of the instant invention has a non-functional substrate stage.
  • a lithography apparatus comprises an exposure station and a plurality of substrate stages, each of the substrate stages having an associated data collection station separate from a data collection station associated with other of the plurality of substrate stages.
  • Each of the plurality of substrate stages is movable from the associated data collection station to the exposure station.
  • each of the plurality of substrate stages is alternately moved from its associated data collection station to the exposure station such that data collection of a first of the plurality of substrate stages can occur at the same time a second of the plurality of substrate stages is undergoing exposure at the exposure station.
  • the lithography apparatus can further be characterized as including first and second data collection cameras disposed over first and third positions within the apparatus.
  • the exposure apparatus being disposed over a second position within the lithography apparatus.
  • the first and second substrate stages being movable from the first position to said second position and from the third position to the second position, respectively.
  • the disclosed lithography apparatus can further be characterized as comprising a rail, to which the first and second substrate stages are movably mounted.
  • the rail can be of a length such that each data collection station overlaps with the exposure station.
  • Such an apparatus would include a stage controller capable of controlling correlated stage movement.
  • a method of performing lithography In one embodiment of the disclosed method, a first substrate is aligned at a first location. Next, the first substrate is exposed at an exposure station. In the disclosed method, while the first substrate is being exposed, a second substrate is aligned at a second location. Once data collection of the second substrate is complete, the second substrate is exposed at the exposure station after the first substrate is moved away from the exposure station.
  • Figures 1 A and IB illustrate first and second views of an embodiment of the present invention.
  • Figure 2 is a diagram spatially illustrating the exposure apparatus and data collection stations of an embodiment of the present invention.
  • Figures 3A and 3B are flow charts illustrating steps in a lithography process according to the present invention.
  • FIG. 1 A and IB illustrate first and second views of an embodiment of the present invention.
  • Data collection and exposure structure 100 includes a first wafer stage 1 10 and a second wafer stage 120.
  • the first and second wafer stages are depicted in the figures as having wafers 1 1 1 and 121 mounted thereon.
  • Wafer stage 1 10 is mounted via sub-stages 1 12 and 1 13 to rail 130.
  • Sub-stage 1 13 is movably mounted to sub-stage 1 12 to permit stage movement in a direction perpendicular to rail 130.
  • substages 1 12 & 1 13 can include components of a linear brushless motor of the type known to those skilled in the art to effectuate this movement.
  • Motors 131 and 132 propel sub-stage 1 13 along the rail 130.
  • Motors 131 and 132 can also be linear brushless motors of the type known to those skilled in the art.
  • wafer stage 120 is mounted to rail 130 via sub-stages 122 and 123. Motors 131 and 132 also propel sub-stage 123 along rail 130.
  • sub-stages 112 & 113 an additional motor components are included within sub-stages 122 & 123 to effectuate stage movement in a direction perpendicular to rail 130.
  • interferometers (not shown) are disposed within the structure to accurately determine the location of wafer stages 1 10 and 120 on rail 130 and along an axis perpendicular to 130. These interferometers work together with a control system, discussed below, to control stage movement.
  • wafer stages 1 10 and 120 can each comprise a precision stage.
  • a precision stage is capable of small and highly accurate motions relative to the sub-stage on which the wafer stage is mounted. These motions may include up to six degrees of freedom. These degrees of motion include motion in directions parallel to an X, Y, and Z axis as well as pivotable motion about axes parallel to each of the X, Y, and Z axes.
  • the implementation of such a precision stage within the instant invention is within the level of skill in the art given this disclosure.
  • Data collection and exposure structure 100 works together with first and second data collection cameras 140 and 150, respectively. These cameras are mounted to a structure separate from the data collection and exposure apparatus.
  • the first and second data collection cameras are mounted above regions referred to herein respectively as first and second data collection stations.
  • the term data collection station is meant to refer to a region along rail 130 where wafer data collection occurs during operation and is not meant to be limited a single particular wafer stage location within the structure.
  • the data collection station associated with each data collection camera is larger in area than its associated wafer stage since each wafer stage moves within its associated data collection station during the data collection process.
  • Data collection cameras 140 and 150 communicate with the control system, discussed below.
  • Data collection and exposure structure 100 further works together with exposure apparatus 160. While exposure optics are used in the case of photolithography, a different type of exposure apparatus may be used depending on the particular application. For example, x-ray, ion, electron, or photon lithographies each may require a different exposure apparatus, as is known to those skilled in the art. The particular example of photolithography is discussed here for illustrative purposes only. Exposure optics 160 are mounted to the same structure, separate from the data collection and exposure apparatus, to which data collection cameras 140 and 150 are mounted, as discussed above. Exposure optics are of the type known to those skilled in the art as being capable of lithographic exposure functions.
  • Exposure optics 160 is disposed above a region referred to herein as the exposure station.
  • the term exposure station is meant to refer to a region along rail 130 where wafer exposure occurs during operation and is not meant to be limited to a singe particular wafer stage location within the structure.
  • the exposure station is larger in area than a single one of the wafer stages since the wafer stage being exposed moves within the exposure station during the wafer exposure process.
  • the exposure station is located between the first and second data collection stations. While the first and second data collection stations are separated by the exposure station, each of the data collection stations can overlap with the exposure station.
  • the load/unload robot can be located to the side of rail 130.
  • the load/unload robot may include and extendable arm capable of loading a wafer, or other substrate, onto either of the first and second wafer stages when these stage are located within associated, respective, first and second load/unload stations.
  • two load/unload robots may be included within the lithography apparatus, one for each of the associated wafer stages.
  • the term load/unload station is meant to refer to a location along the rail 130 where a wafer, or other substrate, can be loaded onto, and unloaded from, an associated wafer stage.
  • each of the first and second load/unload stations is not critical, as long as the they are located in regions reachable by the load/unload robot. Furthermore, the first and second load/unload stations can overlap partially, or completely, with the associated first and second data collection stations, discussed above.
  • control system Also located within the lithography apparatus of the instant invention, though not shown in the figures, is a control system.
  • the control system receives location information from highly accurate sensors located within the apparatus.
  • these sensors comprise interferometers, though one skilled in the art would recognize that other position feedback devices could be used without departing from the scope of this disclosure.
  • linear encoders could be used to provide location information. This location information is used by the control system to monitor the position on rail 130 where each wafer stage is located at any given moment.
  • the control system further receives data from the first and second data collection cameras for performing the necessary alignment functions. During operation, the control system controls stage motion and can control precision stage motion if such precision stages are included in the apparatus. Likewise, the control system also controls the motors in the sub-stages that serve to move the stages in a direction perpendicular to the rail.
  • the control syste further includes collision avoidance functions.
  • collision avoidance functions are included because both wafer stages can occupy the same location along the rail at different times during operation, as discussed more fully below.
  • the control system prevents collisions between the wafer stages as they move along the rail.
  • the particular design and implementation of the control system is not critical and can be done in any number of ways which are within the level of ordinary skill in the art, given this disclosure.
  • the collision avoidance function can ensure a specific separation between the wafer stages during operation. Given this disclosure, one skilled in the art could determine an appropriate collision avoidance separation depending on the specific application.
  • interferometers can be used in conjunction with the control system to measure the precise location of the wafer stages at any given time.
  • the interferometers use lasers to measures distances with high levels of accuracy and are of the type known to those skilled in the art.
  • the error associated with these interferometers while small, is related to the distance measured. At greater distances, the error increases.
  • the alignment accuracy is related to the overall distances the stages travel during operation. This relationship is not limited to structures which include interferometers but exists whenever position error increase with the distance measured. Based on the above discussion, it is apparent that there can be a trade-off between alignment accuracy and stage mobility. A longer rail will provide greater room within which the stages can move.
  • Figure 2 is a diagram spatially illustrating the exposure and data collection stations of an embodiment of the present invention.
  • the figure illustrates exposure apparatus 200.
  • Below exposure apparatus 200 is a region corresponding to the exposure station 210.
  • Below this region are regions corresponding to first and second data collection stations 230 and 240, respectively.
  • Figure 2 includes a representation of a typical substrate diameter 220. It should be noted that the instant invention is scalable to accommodate any desired substrate size or shape. For example, given this disclosure, one skilled in the art would understand that the instant invention would be equally advantageous for
  • the data collection stations each overlap partially with the exposure station.
  • Such an overlap means that the overall length of the rail used can be reduced by an amount corresponding the sum of the lengths of the overlapping regions.
  • the rail would need to be as long as the sum of the lengths of the data collection and exposure stations.
  • shorter rail length means that collisions between stages are possible while a first stage is at its respective data collection station and a second stage is at the exposure station.
  • a collision could occur while the stage subject to exposure remained within the exposure station and the stage subject to data collection remained at the data collection station.
  • the stage subject to data collection remained at the data collection station.
  • the two stages would collide.
  • Correlated stage movement is meant to refer to the movement of a first stage that is related to the location and movement of a second stage within the lithography apparatus.
  • stage movement freedom By correlating the movements of the stages, a shorter rail can be used. as discussed above. Stage movement during operation is correlated such that the two stages can move somewhat in step with each other along the length of the rail if this is necessary to avoid a collision. The stage located under its corresponding data collection camera is moved to accommodate the stage undergoing exposure thereby optimizing the exposure function which, in turn, increases throughput. Correlated stage movement is controlled by the control system discussed above.
  • the correlated stage movement function of the control system is within the level of skill in the art given this disclosure. Furthermore, the instant inventors have discovered that such correlation can take place without decreasing wafer throughput. Thus, a shorter rail can be used thereby increasing alignment precision while still benefitting from plural wafer stages.
  • FIG. 3A is a process flow diagram illustrating the process upon initial start-up of the lithography apparatus according to an embodiment of the instant invention.
  • the first and second wafer stages are referred to as stage A and stage B, respectively.
  • neither wafer stage is loaded with a wafer.
  • a wafer is loaded onto stage A.
  • the load/unload robot can then load a second wafer onto stage B, while the first wafer undergoes data collection and is moved to the exposure station, as illustrated in a step 320.
  • data collection of the second wafer proceeds while the first wafer is moved to the exposure station.
  • wafer 1 can be exposed while data collection of the second wafer continues at stage B, as illustrated in a step 330.
  • stage A moves away from the exposure station, as illustrated in a step 340.
  • stage B moves to the exposure station.
  • the first wafer is unloaded from stage A and a third wafer is loaded onto stage A, while the second wafer undergoes exposure at the exposure station.
  • data collection of the third wafer begins while the second wafer remains at the exposure station.
  • FIG. 3B is a process flow diagram illustrating a series of repeating steps that occur during a lithography process according to the instant invention. The steps illustrated in Figure 3B involve four wafers from within a continuing process numbered: n-2, n-1 , n, and n+1.
  • n-2 wafers from within a continuing process numbered: n-2, n-1 , n, and n+1.
  • n-1 wafer n-1 is exposed on stage A while the previously exposed wafer, n-2, is unloaded from stage B. While the exposure of wafer n-1 is ongoing, the next wafer, n, is loaded onto stage B where data collection occurs.
  • stage A moves away from the exposure station while stage B moves to the exposure station, as illustrated in a step 370.
  • the second wafer, n-1 is unloaded from stage A and the fourth wafer, n+1, is loaded onto stage A where data collection takes place.
  • wafer n is exposed at the exposure station.
  • stage A is moved to the exposure station and stage B is moved away from the exposure station.
  • the step of exposing a wafer on one of the stages occurs simultaneously with the unloading of a previous wafer and the loading and data collection of a subsequent wafer on a second stage, step 360, for example.
  • the other stage can continue to move through the process. Either stage can move through the complete process so long as the other station is positioned away from the exposure station. This allows the lithography apparatus of the instant invention to operate with the same throughput as a conventional single-stage lithography apparatus.
  • lithography throughput can be increased over a conventional single-stage lithography apparatus by virtue of the parallel data collection and exposure capabilities of the instant invention.
  • loading, data collection, exposure, and unloading occur in series.
  • throughput time is based, in part, on the sum of the times required to complete these steps.
  • data collection time is a function of the desired precision of a particular lithographic process. As precision increases, so to does data collection time. In a conventional lithographic apparatus, increased data collection time means decreased throughput. In the instant invention, throughput is not directly related to data collection time. Thus, as lithographic precision increases, the throughput improvement realized by the present invention will also increase.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

Cette invention se rapporte à un appareil de lithographie à deux étages ayant un rendement accru et qui est capable d'exécuter simultanément les fonctions de collecte de données et d'exposition. Dans un mode de réalisation, cet appareil (100) comprend un premier et un second étage (110, 120) de substrat, ayant chacun des stations (140, 150) correspondantes de chargement/déchargement et de collecte de données. Cet appareil comprend une station (160) optique de projection située entre les stations de chargement/déchargement et de collecte de données associées à chaque étage. Ainsi, la collecte des données du second étage se produit simultanément à l'exposition du premier étage. Une fois que les deux processus sont terminés, les deux étages se déplacent linéairement, ce qui permet une transition simple et rapide des étages sous l'appareil d'exposition. Cette invention concerne également un procédé de lithographie, dans lequel un premier substrat est exposé, pendant qu'une seconde plaquette est alignée simultanément.
PCT/US2000/042336 1999-11-30 2000-11-29 Appareil et procede de lithographie a deux etages WO2001040875A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU32718/01A AU3271801A (en) 1999-11-30 2000-11-29 Dual-stage lithography apparatus and method

Applications Claiming Priority (2)

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US44963099A 1999-11-30 1999-11-30
US09/449,630 1999-11-30

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WO2001040875A1 true WO2001040875A1 (fr) 2001-06-07

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Cited By (16)

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EP1353229A1 (fr) * 2002-04-09 2003-10-15 ASML Netherlands B.V. Appareil lithographique, procédé pour la fabrication d un dispositif et dispositif fabriqué par ce procédé
EP1353233A2 (fr) * 2002-04-09 2003-10-15 ASML Netherlands B.V. Appareil lithographique et méthode pour la fabrication d'un dispositif
EP1367444A2 (fr) * 2002-05-29 2003-12-03 ASML Holding, N.V. Système catadioptrique pour la lithographie avec porte-objets pour masque et plaquette dans plans mutuellement orthogonaux
SG118190A1 (en) * 2002-06-10 2006-01-27 Nikon Corp Exposure apparatus and stage device and device manufacturing method
WO2007118376A1 (fr) * 2006-04-14 2007-10-25 Shanghai Micro Electronics Equipment Co., Ltd. Système à deux étages de positionnement commutation destiné à une machine lithographique à balayage progressif
US7298459B2 (en) 2001-10-19 2007-11-20 Asml Holding N.V. Wafer handling method for use in lithography patterning
WO2008011766A1 (fr) * 2006-07-18 2008-01-31 Shanghai Micro Electronics Equipment Co., Ltd. Système de positionnement de précision pour exposition à commutation à deux étages
CN100456136C (zh) * 2005-12-02 2009-01-28 上海微电子装备有限公司 一种步进扫描投影光刻机多总线时序同步控制方法
WO2009078473A1 (fr) * 2007-12-14 2009-06-25 Nikon Corporation Appareil d'exposition, procédé d'exposition et procédé de fabrication de dispositif
US7670530B2 (en) * 2006-01-20 2010-03-02 Molecular Imprints, Inc. Patterning substrates employing multiple chucks
US7670529B2 (en) 2005-12-08 2010-03-02 Molecular Imprints, Inc. Method and system for double-sided patterning of substrates
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EP2192445A1 (fr) * 2008-11-28 2010-06-02 NEC Electronics Corporation Dispositif d'exposition et procédé de fabrication de dispositif semi-conducteur.
CN103268073A (zh) * 2013-05-28 2013-08-28 哈尔滨工业大学 一种基于虚拟现实技术的双工件台半物理仿真系统
CN112099320A (zh) * 2020-09-29 2020-12-18 广东华恒智能科技有限公司 一种双工位曝光设备

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Cited By (26)

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Publication number Priority date Publication date Assignee Title
US7298459B2 (en) 2001-10-19 2007-11-20 Asml Holding N.V. Wafer handling method for use in lithography patterning
EP1353229A1 (fr) * 2002-04-09 2003-10-15 ASML Netherlands B.V. Appareil lithographique, procédé pour la fabrication d un dispositif et dispositif fabriqué par ce procédé
EP1353233A2 (fr) * 2002-04-09 2003-10-15 ASML Netherlands B.V. Appareil lithographique et méthode pour la fabrication d'un dispositif
EP1353233A3 (fr) * 2002-04-09 2007-10-03 ASML Netherlands B.V. Appareil lithographique et méthode pour la fabrication d'un dispositif
SG110038A1 (en) * 2002-04-09 2005-04-28 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and device manufactured thereby
US7046331B2 (en) 2002-04-09 2006-05-16 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
US6977716B2 (en) 2002-05-29 2005-12-20 Asml Holding N.V. Catadioptric lithography system and method with reticle stage orthogonal to wafer stage
EP1367444A3 (fr) * 2002-05-29 2005-06-15 ASML Holding N.V. Système catadioptrique pour la lithographie avec porte-objets pour masque et plaquette dans plans mutuellement orthogonaux
US6757110B2 (en) 2002-05-29 2004-06-29 Asml Holding N.V. Catadioptric lithography system and method with reticle stage orthogonal to wafer stage
EP1367444A2 (fr) * 2002-05-29 2003-12-03 ASML Holding, N.V. Système catadioptrique pour la lithographie avec porte-objets pour masque et plaquette dans plans mutuellement orthogonaux
US7068350B2 (en) 2002-06-10 2006-06-27 Nikon Corporation Exposure apparatus and stage device, and device manufacturing method
SG118190A1 (en) * 2002-06-10 2006-01-27 Nikon Corp Exposure apparatus and stage device and device manufacturing method
US7727453B2 (en) 2002-07-11 2010-06-01 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US7691313B2 (en) 2002-11-13 2010-04-06 Molecular Imprints, Inc. Method for expelling gas positioned between a substrate and a mold
CN100456136C (zh) * 2005-12-02 2009-01-28 上海微电子装备有限公司 一种步进扫描投影光刻机多总线时序同步控制方法
US8109753B2 (en) * 2005-12-08 2012-02-07 Molecular Imprints, Inc. Double-sided nano-imprint lithography system
US7670529B2 (en) 2005-12-08 2010-03-02 Molecular Imprints, Inc. Method and system for double-sided patterning of substrates
US7670530B2 (en) * 2006-01-20 2010-03-02 Molecular Imprints, Inc. Patterning substrates employing multiple chucks
WO2007118376A1 (fr) * 2006-04-14 2007-10-25 Shanghai Micro Electronics Equipment Co., Ltd. Système à deux étages de positionnement commutation destiné à une machine lithographique à balayage progressif
US8027028B2 (en) 2006-07-18 2011-09-27 Shanghai Micro Electronics Equipment Co., Ltd. Precise positioning system for dual stage switching exposure
WO2008011766A1 (fr) * 2006-07-18 2008-01-31 Shanghai Micro Electronics Equipment Co., Ltd. Système de positionnement de précision pour exposition à commutation à deux étages
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