WO2001018844A1 - Procede de traitement mettant en oeuvre un faisceau ionique focalise - Google Patents

Procede de traitement mettant en oeuvre un faisceau ionique focalise Download PDF

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Publication number
WO2001018844A1
WO2001018844A1 PCT/JP2000/005975 JP0005975W WO0118844A1 WO 2001018844 A1 WO2001018844 A1 WO 2001018844A1 JP 0005975 W JP0005975 W JP 0005975W WO 0118844 A1 WO0118844 A1 WO 0118844A1
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WO
WIPO (PCT)
Prior art keywords
ion beam
focused ion
sample
processing
focused
Prior art date
Application number
PCT/JP2000/005975
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English (en)
Japanese (ja)
Inventor
Tetsuji Nishmura
Toshiaki Fujii
Yasuhiko Sugiyama
Original Assignee
Seiko Instruments Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc. filed Critical Seiko Instruments Inc.
Publication of WO2001018844A1 publication Critical patent/WO2001018844A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3005—Observing the objects or the point of impact on the object

Definitions

  • the present invention relates to a processing method for performing a sputtering etching process or a deposition process for forming a thin film on a sample surface such as a semiconductor integrated circuit or a ceramic substrate using a focused ion beam processing apparatus.
  • the focused ion beam processing device scans the sample surface with the focused ion beam, detects secondary electrons and secondary ions generated from the sample surface, and can observe the sample surface enlargedly from the distribution.
  • the focused ion beam can be scanned on the surface of the sample, and the sample surface can be etched by sputtering.
  • deposition gas can be deposited on the sample surface by scanning a focused ion beam on the sample surface while introducing gas, which is a raw material for the thin film, into the sample chamber and spraying the gas on the sample surface.
  • the focused ion beam processing apparatus can perform cross-section processing and observation for observing the laminated structure of the sample using these processings. Further, as described in Japanese Patent Application Laid-Open No. H02-2123749, a method is known in which a plurality of focused ion beam barrels are attached, and a focused ion beam barrel and an electron beam barrel are used.
  • one focused ion beam column is used for processing and the other is used for observation.
  • the focused ion beam column is used for processing and the electron beam column is used for observation.
  • the side of the hole drilled by the sputter etching process was observed with an observation lens barrel.
  • the sample is irradiated at the same time with the focused ion beam from the multiple focused ion beam column, and the sputtering is performed.
  • the time required for the etching process is determined by the amount of ions irradiated to the workpiece, that is, the dose. Therefore, by simultaneously irradiating a focused ion beam with a plurality of focused ion beam barrels, the dose that can be achieved by each focused ion beam barrel can be double the number of focused ion beam barrels used.
  • Figure 1 shows the focused ion beam column and the control power supply.
  • FIG. 2 shows an example of an apparatus used in the present invention.
  • FIG. 3 is an explanatory diagram relating to observation image adjustment.
  • FIG. 4 is an explanatory diagram relating to observation image adjustment.
  • FIG. 5 shows an embodiment of the present invention.
  • FIG. 6 shows another embodiment of the present invention.
  • FIG. 7 shows another embodiment of the present invention.
  • FIG. 8 is a graph illustrating the relationship between the incident angle of the focused ion beam and the processing volume.
  • FIG. 1 shows an example of a focused ion beam column used in the present invention.
  • the focusing ion beam column mainly includes an ion source 1, a condenser lens 2, a blanking electrode 3, a movable diaphragm 4, a deflection electrode 5, and an objective lens 6.
  • an optical axis correction electrode and an astigmatism correction electrode are also shown.
  • liquid metal gallium is used as the ion source.
  • the liquid metal gum stored in the reservoir is supplied to the needle-shaped emitter by surface tension.
  • reservoirs and emitters can be overheated by filament.
  • An electric field is applied to the emitter part by one or more electrodes, and gallium accumulated in the emitter part is extracted as an ion beam.
  • the emitter is accelerated by this electric field because a high voltage of +5 to +30 kV is applied to the ground potential.
  • the ion beam is focused by the condenser lens 2 and focused on the surface of the sample 25 by the objective lens 6.
  • Figure 1 shows an Einzeln-type lens that connects high voltage and ground potential to three electrodes. However, this is only an example, and other types of lenses may be used.
  • the objective lens 6 is arranged at a position closest to the sample 25, but the position can be changed according to the required performance and function.
  • the movable diaphragm 4 has a plurality of through-holes having different diameters.
  • the position of the through-hole is controlled by the diaphragm control unit 10, and the through-hole to be used is switched.
  • the amount of the ion beam reaching the sample 25, that is, the sample current can be changed.
  • the position of the through hole can be adjusted so as to match the center of the ion beam.
  • the blanking electrode 3 can generate a large electric field between the two electrodes.
  • the same potential usually the ground potential
  • the ion beam reaches the sample 25.
  • a large electric field is generated by applying a signal having a large potential difference to each of the blanking electrodes 3, the ion beam is largely deflected, hits a shield such as the movable diaphragm 4, and the ion beam does not reach the sample 25.
  • the deflecting electrode 5 is composed of at least two pairs of electrodes facing each other, and the trajectory of the ion beam is two-dimensionally controlled by an electric field generated between the electrodes.
  • a power supply for generating a signal applied to each of these electrodes and the movable diaphragm 4 is controlled by a computer. Further, signals applied to the blanking electrode 3 and the deflection electrode 5 are generated from the scanning signal generator 9. This makes it possible to determine whether or not to irradiate the sample 25 with the beam depending on the ion beam irradiation position of the sample.
  • the output signal of the detector 27 is input to the scanning signal generator 9 and processed. The detector 27 detects the ion beam irradiation position and the secondary charged particles generated by the ion beam irradiation at the irradiation position, and stores the output signal as an electric signal together. 25 You can observe the surface.
  • FIG. 2 shows an example of an apparatus for implementing the present invention.
  • Two focused ion beam columns described in FIG. 1 are mounted in the sample chamber 23.
  • the first focused ion beam column 21 is installed at a position where the ion beam is vertically incident on the sample 25 installed horizontally.
  • the second focusing ion beam column 22 is installed at different angles. In the example of Fig. 2, it is installed at a position inclined 60 degrees. And, the center of the ion beam of each focusing ion beam column crosses the surface of the sample 25 placed on the sample stage 24.
  • the sample stage 24 is movable in at least three axes of horizontal X, ⁇ , and vertical Z.
  • the horizontal X and Y axes are used for observing the sample 25 and determining the processing position.
  • the Z-axis is required so that the height of the sample surface is always at the intersection of the focused ion beams emitted from the two focused ion beam columns.
  • the movement of the sample stage 24 in the Z-axis direction is essential.
  • it can have an inclined T axis, a rotating R axis, etc.
  • the detector 27 detects secondary charged particles (electrons or ions) generated by irradiating the sample 25 with the focused ion beam.
  • the gas introduction device 28 includes a container for storing a gas or a raw material of gas, a nozzle for blowing gas onto the surface of the sample 25, and a container and a nozzle. It consists of a pipe that connects the chisel, and a valve that opens and closes the pipe in the middle of the pipe.
  • Gas is the raw material for deposition film formation by the beam assisted CVD method.
  • the beam system CVD method it is generally a molecular gas containing the material of the thin film deposited on the sample surface.
  • the gas blown to the sample surface is adsorbed on the sample surface.
  • the kinetic energy decomposes the molecular gas.
  • the decomposed gas component is exhausted outside the sample chamber by the vacuum pump 26, and the solid component remains as a thin film on the sample surface.
  • the focused ion beam is being sputter-etched simultaneously with the deposition. Therefore, it is necessary to control the introduction amount of the source gas and the irradiation amount of the focused ion beam so that the thin film formation speed by the deposition is higher than the processing speed of the super etching.
  • the gas introduced into the sample chamber 23 by the gas introduction device 28 is sprayed onto the sample surface simultaneously with the irradiation of the focused ion beam, so that the etching gas is used to improve the processing speed of the sputtering.
  • the etching assist gas generally reacts chemically with the workpiece sputtered by the focused ion beam irradiation to form a molecular gas combined with the workpiece, and the etching assist gas is supplied by the vacuum pump 26. It is exhausted out of the sample chamber 23.
  • the etching assist gas chemically reacts with a specific substance, it is possible to perform selective etching utilizing the fact that the processing speed is different between substances that do not react chemically and substances that do not react. Also, a gas that reacts with a specific sample and suppresses the progress of the sputtering process is known. Selective etching using the difference in the processing speed depending on the material is possible.
  • gas introduction device 28 Although only one gas introduction device 28 is shown in the figure, multiple gas introduction devices 28 and pipes corresponding to multiple gas storage containers are used so that the appropriate gas can be used properly. Alternatively, a gas introduction device 28 having a valve and a valve may be used.
  • the sample chamber 23 and the focused ion beam column are evacuated by a vacuum pump 26.
  • a load port chamber for taking in and out the sample 25 without setting the sample chamber 23 to the atmosphere can be provided.
  • control power supply is not shown, but is assumed to be attached to each lens barrel. However, it is assumed that one device control computer 12 is shared by one device. Further, the output signal of the detector 27 is input to both the scanning signal generators 9. In this way, the sample surface can be magnified and observed by irradiating only the focused ion beam of one focused ion beam column. In addition, even when the focused ion beam is irradiated on the sample surface by two focused ion beam columns at the same time, it is possible to perform scanning at independent locations by independent scanning methods.
  • the sample 25 is observed with the first focused ion beam column 21.
  • Sample 25 is placed horizontally, and the focused ion beam is perpendicular to Sample 25. It shall be incident.
  • the sample 25 has a clear shape and size, such as a mesh in which a square is arranged on the grid.
  • the aspect ratio and the squareness of the observation image are adjusted so that the desired shape of the sample 25 already known is observed on the observation screen.
  • the sample 25 is observed with the second focused ion beam column 22. Since the sample 25 is placed horizontally, the focused ion beam of the second focused ion beam column has a 60 ° inclination with respect to the sample surface normal if the configuration shown in Fig. 2 is used. Incident on the surface. Therefore, as shown in Fig. 4, in the first focused ion beam column that irradiates the focused ion beam perpendicularly to the sample 25, the focused ion beam emitted from point A is centered on point 0 on the sample surface. A focused ion beam is applied to a range from point B to point C.
  • the focused ion beam emitted from the point X has an incident angle of 90 ° on the sample surface of the focused ion beam. If it is tilted to a degree, the focused ion beam is irradiated in the range from point Y to point Z. This range coincides with the range from point B to point C. However, in fact, since the sample has a slope, it is irradiated from the point Y1 to the point Z1 on the sample surface. At this time, in the normal direction of the sample surface in FIG.
  • the irradiation range of the focused ion beam does not change for both the first and second focused ion beam columns.
  • the image observed by the second focused ion beam has a distorted aspect ratio. Therefore, in the second focused ion beam column 22, the scanning signal applied to the polarizing electrode is adjusted so that the focused ion beam is irradiated in a range from the point B to the point C around the sample surface point 0. adjust. Further, in this state, the observation position and the perpendicularity of the observation image are adjusted so that the specimen 25 looks the same as the observation image when observed by the first focused ion beam column 21.
  • the ratio adjustment function is linked to the tilt angle of the sample stage 24.
  • the images observed by the first focused ion beam column 21 and the second focused ion beam column 22 always remain on the sample 25 within the tilt angle range of the sample stage.
  • it is equivalent to that observed in the same field of view as when the focused ion beam was incident vertically.
  • FIG. 5 shows a first working example in which the same working area is subjected to sputter etching.
  • the processing speed is faster when the focused ion beam is incident on the corner of the sample than when it is incident on a flat sample.
  • the processing by the second focused ion beam column 22 proceeds faster and the corners are etched. Therefore, compared to Fig. 5, the corners are actually etched and smoother.
  • FIG. 6 shows a second working example in which different working areas are sputter-etched. This is the cross-sectional shape when the beam is applied by irradiating a focused ion beam to the adjacent processing area. At this time, the machining area is It can be seen that by selecting 1 / sin ((where (is the angle of incidence of the focused ion beam on the sample surface; the inclination from the normal.)), Processing for cross-sectional observation can be efficiently performed.
  • the sputtering etching by the first and second focused ion beam columns 21 and 22 proceeds at the same processing speed, in actuality, as described above, the focused ion beam incident obliquely on the sample is However, because the processing speed of the sputtering etching is high, 1 the first focused ion beam irradiation amount should be relatively larger than the second focused ion beam irradiation amount. 3 After processing, perform finishing processing using the first focused ion beam, etc., and correct the shape distortion due to the difference in processing speed.
  • FIG. 7 shows a third processing example in which different processing regions are etched.
  • a large processing area by the first focused ion beam irradiation and an overlapping and narrow processing area by the second focused ion beam irradiation are set.
  • This is an example used when performing deep sputtering etching on a wide area.
  • the processing speed of the sputter etching process using the second focused ion beam that is incident on the sample surface with an inclination is compared with the processing speed using the first focused ion beam that is perpendicularly incident on the sample surface. They take advantage of being fast.
  • the sample is tilted, and the first and second focused ion beams are irradiated with the sample surface inclined to the sample surface. May be. A higher processing speed can be realized than when either one is perpendicularly incident on the sample.
  • one processing hole is formed by overlapping or adjacent processing regions, but completely different regions may be processed independently of each other.
  • the sputter etching processing Assist gas that supports may be used.
  • the assist gas reacts chemically with the workpiece to speed up the etching process. In general, chemical reactions are selective with respect to the material of the workpiece.
  • the second focused ion beam By irradiating the first and second focused ion beams while spraying the deposition source gas on different regions of the sample surface, thin films are formed on different regions of the sample surface.
  • the second focused ion beam into which the focused ion beam is incident while being inclined with respect to the sample, is subjected to the sputter etching process, which proceeds simultaneously with the deposition, and proceeds rapidly. Therefore, the deposition speed can be maintained by reducing the beam current amount or the irradiation time for irradiating one pixel.
  • deposition can be performed in the same region on the sample surface.
  • (1) Do not irradiate the other focused ion beam near the pixel irradiated by one focused ion beam.
  • 2 Do not irradiate the pixels irradiated by one focused ion beam with the other focused ion beam for a certain period of time. Irradiate a focused ion beam based on the rules described above.
  • the first rule stated above is that the focused ion beam applied to one pixel has an effect on the deposition source gas not only on that pixel but also on the surrounding pixels. This is to prevent irradiation of the beam with the result of suppressing the effect.
  • the second rule is that the chemical reaction for the deposition proceeds for a certain time after the irradiation of the focused ion beam. Irradiating the focused ion beam more than necessary during this time is intended to prevent the effect from being suppressed.
  • a plurality of focused ion beam columns are mounted in one sample chamber, and the focused ion beams of each focused ion beam column intersect at one point, and the sample surface is located at the intersection. I do.

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

Un dispositif classique qui possède une pluralité de barillets d'objectif à faisceaux ioniques focalisés montés dans une chambre à échantillon, met en oeuvre un barillet d'objectif pour l'observation et un autre pour le traitement, ce qui permet de nécessiter le même temps de traitement que celui nécessaire à un dispositif à faisceau ionique focalisé dans lequel un barillet d'objectif à faisceau ionique focalisé est monté. L'invention concerne un nouveau procédé de traitement mettant en oeuvre un faisceau ionique focalisé, selon lequel une pluralité de barillets d'objectif à faisceaux ioniques focalisés montés dans une chambre à échantillon sont mis en oeuvre en vue du traitement et en même temps un échantillon est irradié avec un faisceau ionique focalisé, ce qui permet de réduire le temps de traitement.
PCT/JP2000/005975 1999-09-08 2000-09-01 Procede de traitement mettant en oeuvre un faisceau ionique focalise WO2001018844A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11/254914 1999-09-08
JP25491499A JP2001077058A (ja) 1999-09-08 1999-09-08 集束イオンビームを用いた加工方法

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WO2001018844A1 true WO2001018844A1 (fr) 2001-03-15

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Publication number Priority date Publication date Assignee Title
DE10351059B4 (de) * 2003-10-31 2007-03-01 Roth & Rau Ag Verfahren und Vorrichtung zur Ionenstrahlbearbeitung von Oberflächen
EP2132550B1 (fr) * 2007-03-06 2012-11-07 Leica Mikrosysteme GmbH Procédé de fabrication d'un échantillon pour la microscopie électronique
GB201002645D0 (en) * 2010-02-17 2010-03-31 Univ Lancaster Method and apparatus for ion beam polishing

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1988007261A1 (fr) * 1987-03-16 1988-09-22 Hughes Aircraft Company Systeme et procede d'attaque par faisceaux moleculaires
JPH02288144A (ja) * 1989-04-28 1990-11-28 Mitsubishi Electric Corp 集束イオンビーム照射装置
JPH04272642A (ja) * 1991-02-26 1992-09-29 Shimadzu Corp 集束イオンビーム装置
JPH04373125A (ja) * 1991-06-21 1992-12-25 Hitachi Ltd 集束イオンビーム装置およびそれによる加工方法
JPH08315764A (ja) * 1995-05-15 1996-11-29 Hitachi Ltd 集束イオンビーム加工装置
JPH10223574A (ja) * 1997-02-12 1998-08-21 Hitachi Ltd 加工観察装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1988007261A1 (fr) * 1987-03-16 1988-09-22 Hughes Aircraft Company Systeme et procede d'attaque par faisceaux moleculaires
JPH02288144A (ja) * 1989-04-28 1990-11-28 Mitsubishi Electric Corp 集束イオンビーム照射装置
JPH04272642A (ja) * 1991-02-26 1992-09-29 Shimadzu Corp 集束イオンビーム装置
JPH04373125A (ja) * 1991-06-21 1992-12-25 Hitachi Ltd 集束イオンビーム装置およびそれによる加工方法
JPH08315764A (ja) * 1995-05-15 1996-11-29 Hitachi Ltd 集束イオンビーム加工装置
JPH10223574A (ja) * 1997-02-12 1998-08-21 Hitachi Ltd 加工観察装置

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TW465036B (en) 2001-11-21

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