A7 465036 ___—____B7______ 五、發明說明（1 ) 枝術領域 本發明係有關使用集中離子束加工裝置，於半導體積 體電路、陶瓷基板等之試料表面上進行濺射蝕刻加工、形 成薄膜之沈積加工等加工方法。 背景技術 集中離子束加工裝置可將集中離子束掃描於試料表面 ，檢測自試料表面產生之二次電子、二次離子，由其分佈 ，進行試料表面之擴大觀察。復可將集中離子束掃描於試 料表面，對試料表面進行濺射蝕刻加工。進一步，可將構 成薄膜原料之氣體導入試料室，一面將其噴塗於試料表面 ，一面於試料表面掃描集中離子束，進行形成薄膜於試料 表面之沈積加工。 集中離子束加工裝置用於此類加工，可進行觀察試料 之層疊構造之截面加工、観察。復如特開平 0 2 — 1 2 3 7 4 9所揭露，巳知有安裝複數集中離子束 鏡筒，使用集中離子束鏡简及電子束鏡筒之方法。 於安裝複數集中離子束鏡筒之裝置情形下，一部份集 中離子束鏡筒供加工用’另一部份供觀察用。又，在安裝 集中離子束鏡筒及電子束鏡筒情形下’集中離子束鏡筒供 加工用，離子束鏡筒供觀察用。 於任一情形下，均以觀察用鏡筒觀察藉由濺射蝕刻開 出之孔之側面。 如此，對試料表面進行濺射鈾刻加工’露出截面1確 -17---\-------裝--------訂· (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作杜印製 本紙張尺度適用中國國家標準（CNS)A4規格（2〗〇 x 297公爱） "4 - 46 50 36 A7 B7 五、發明說明（2〉 認試料層疊構造之程序逐漸微細化’使得製程複雜之最新 半導體積體電路、陶瓷製感測器等變成必要而不可或缺。 惟，濺射蝕刻加工所需時間雖隨著集中離子束鏡筒之 性能增進而逐漸縮短，卻仍然佔程序全體時間中的絕大比 率。 在製造.檢查程序縮短方面縮短濺射蝕刻加工所需時 間成爲須將之解決之課題。 發明槪要 同時將安裝複數個之集中離子朿鏡筒之集中離子束照 射於試料，進行濺射蝕刻加工。 一般來說，濺射蝕刻加工所需之時間依照射於被加-x-物之離子量，亦即劑量而定。因此，藉由以複數集中離子 束鏡筒同時照射集屮離子束，可成爲使用能藉各集中離子 束鏡筒實現之劑量之集中離子束鏡简之台數倍° ----------»-, S--------訂. (請先閱讀背面之注意事項再填寫本頁) 明 說 單 簡 之 式 圓 經濟部智慧財產局員工消費合作社印製 。 電 圖圖 ί Π4 HQ 帋 明甲 控。說說 及例之之。 。 。 筒置整整例例例 鏡裝調調施施施 束用像像實實實 子所察察 一 i i 離明觀觀之另另， 中發關關明明明 集本有有發發發 示示示示本本本 顯顯顯顯係係係 1 2 3 4 5 6 7 圖圖 圖圖圖圖圖 適 度 尺 張 紙 本 格 規 M s) N (c 準 標 f' 釐 公 97 2 A7 465036 五、發明說明（3) 圖8係說明集中離子束之入射角度與加工體積關係之 圖表。 (請先閱讀背面之注意事項再填寫本頁) 主要元件對照表 1 離子源部 2 聚光透鏡 3 遮沒電極 4 可動光圈 5 偏轉電極 6 對物透鏡 9 掃描信號產生部 10 光圈控制部 2 1 第1集中離子束鏡筒 2 2 第2集中離子束鏡筒 2 3 試料室 2 4 試料台 2 5 試料 2 6 真空泵 經濟部智慧財產局員工消費合作社印製 2 7 檢測器 28 氣體導入裝置 用以實施發明之最佳形態 圖1顯示本發明所用集中離子束鏡筒之一例子。 集中離子束鏡筒主要由離子源部1、聚光透鏡2、遮 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -6- Λ7 4 6 5 0 3 6 B7__ 五、發明說明（4) 沒電極3、可動光圈4、偏轉電極5、對物透鏡6構成。 此外，雖未圖示，有光軸校正電極'像散校正電極等。 (請先閱讀背面之注意事項再填寫本頁) 一般使用液態金屬鎵來作爲離子源。貯積於貯液槽之 液態金屬鎵藉由表面張力供至針狀發射器u 又，貯存槽、發射器配置成可藉燈絲加熱。於發射器 部份藉一個或複數電極形成電場’貯積於發射器部份之鎵 被拉出成爲離子束。由於發射器相對於接地電位施加+ 5 至+ 3 0 k V之高電壓，故於此電場下加速。 離子束藉聚光透鏡2聚焦’藉對物透鏡6對準焦點於 試料2 5表面。圖1固然顯示接通高電壓及接地電位於三 個電極之艾恩雪倫型透鏡，惟此爲·-例子，使用其他類型 之透鏡亦無妨。又，固然將對物透鏡6配置於最接近試料 2 5之位置，惟此位置亦可隨所求性能、功能變更。 於可動光圈4有複數個直徑不同之貫通孔，藉光圈控 制部1 0控制貫通孔之位置，切換所用貫通孔《藉由使離 子束通過各個貫通孔，可變更到達試料2 5之離子束量， 亦即試料電流。復可調整此位置，俾貫通孔之位置與離子 束之中心_-致。 經濟部智慧財產局員Η消費合作社印製 遮沒電極3配置成可於二電極間產生大電場。一施加 相同電位，通常一施加接地電位於各電極，離子束即到達 試料2 5。惟若施加電位差大之信號於遮沒電極3之各電 極，產生大的電場，離子束即作大的偏轉，碰到可動光圈 4等之遮蔽物，離子束不會到達試料2 5。 偏轉電極5至少由相對向之二電極構成之二組電極構 本紙張尺度適用中國國家標準（CNS)A4規格（210 x297公釐） Λ7 465036 __B7_____ 五、發明說明（5 ) 成’藉發生於各電極間之電場’二次元控制離子束之軌道 〇 (請先閱讀背面之注意事項再填寫本頁) 發生施加於此各個電極、可動光圈4之電源藉電腦控 制。又，施加於遮沒電極3及偏轉電極之信號自掃描信號 產生部9產生。藉此，可依離子束之試料照射位置決定是 否照射離子束於試料2 5。又，檢測器2 7之輸出信號輸 入掃描信號產生部9加以處理。以檢測器2 7檢測離子束 之照射位置，以及於此照射位置因照射離子朿產生之二次 帶電粒子，核對、記憶成爲電氣信號之輸出信號，藉此， 可作試料2 5表面之觀察。 圖2顯不實施本發明之·一裝置例。 圖1所說明之集中離子束鏡筒安裝於二試料室2 3。 第1集中離子束鏡筒2 1相對於水平設置之試料2 5 ，設置在離子束垂直入射之位置。第2集中離子束鏡筒 2 2設置於不同角度。圖2之例子安裝在6 0度傾斜之位 置。並且，設置成，在載置於試料台2 4上之試料2 5之 表面，各集中離子束鏡筒之離子束中心交义。 經濟部智慧財產局員工消費合作社印製 試料台2 4至少可沿水平軸X、Y及垂直軸三軸移動 。水平方向之X、Y軸用於試料2 5之觀察、加工裝置之 決定=又，於Z軸上，試料表面之高度有必要經常保持於 自二集中離子束鏡筒發射之集中離子束之交點位置。藉由 維持試料表面之高度於集中離子束之交點’可使二集中離 子束鏡筒之集中離子束照射位置處於試料表面之同一·位置 u且，後文固然述及有關二集中離子束鏡筒之集中離子束 本紙張尺度適用ΐ國國家標準（CNS)A4規格（2]0 X 297公釐） -8- 經濟部智慧財產局員工消費合作社印製 α 6 5 0 3 6 Λ7 Β7 五、發明說明（6) 照射位置調整之利用電氣方法所作微調’惟若與試料台 2 4上預定位置不一致，即會超出微調範圍。因此，須作 試料台2 4之Z軸方向移動。另外’亦可具有傾斜T軸' 旋轉R軸等。 檢測器2 7檢測照射集中離子束於試料2 5所產生之 二次電帶粒子（電子或離子）。 氣體導入裝置2 8固然未詳細圖示，惟包括貯存氣體 或氣體原料之容器 '噴塗氣體於試料2 5表面之噴嘴、連 接容器與噴嘴之管路以及位於管路途中，啓閉管路之路徑 之閥。 氣體係利用光束輔肋之C V D (化學蒸汽沈積）法形 成沈積膜之原料。光束輔助之C V D法一般使用含有沈積 於試料表面之薄膜之材料之分子氣體。 噴塗於試料表面之氣體吸附於試料表面。於此狀態下 ，若照射集中離子束’分子氣體即會在此運動能下分解。 此時，分解之氣體成份藉真空泵2 6排出試料室外，固體 成分變成薄膜，殘留於試料表面。此時，集中離子束亦與 沈積同時進行濺射蝕刻。因此’沈積形成薄膜之速度會高 於濺射蝕刻之加工速度’有必要控制原料氣體之導入量及 集中離子束之照射量。 又’氣體導入裝置2 8導入試料室2 3之氣體亦可爲 藉由與集中離子束照射同時噴塗於試料表面，提高濺射触 刻之加工速度之蝕刻輔助氣體。 蝕刻輔助氣體一般與藉由集中離子束照射職射之被加 I —---ΊΙΓΙ — i i--------訂· (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） -9 - 465036 A7 B7 五、發明說明（7) 工物起化學反應，形成與被加工物結合之分子氣體，藉此 ，以真空泵2 6排出試料室2 3外。 通常，微觀察濺射蝕刻加工，即發現濺射蝕刻加工之 被加工物會落下、再附著於試料表面，因此須反覆進行濺 射鶊、刻。 由於可藉由使用蝕刻輔助氣體，抑制再附著，故可縮 短濺射蝕刻加工之加工時間u 一般說來，由於蝕刻輔助氣體會與特定物質起化學反 應，故亦可能藉不起化學反應之物質，利用加工速度不同 ，作選擇性蝕刻。又，與特定試料起反應，抑制濺射蝕刻 加工進展之氣體亦業已周知°可利用材料所造成之加工速 度之不同作選擇性蝕刻。 且，圖1固然僅圖示一氣體導入裝置2 8 ’惟亦可使 用按目的分開使用氣體之複數氣體導入裝置2 8 ’使用具 有對應複數氣體貯藏容器之管路及閥之氣體導入裝置2 8 II---,丨丨‘---^ i--------訂 (請先閲讀背面之注意事項再填寫本頁) 空 3 直；2 6 室 2料 泵試 空入 真充 藉氣 6 大 2 將 筒不 鏡可 束亦 子 惟 離 ’ 中示 集圖 及未 3 然 2 固 室， 料又 試。 氣 bh 經濟部智慧財產局員工消費合作社印製 然 ο 筒 鏡 個 各 於 設 。附 写-其 緊ί 閉’ 載源 裝萆 之制 入控 出示 5 圖 2未 料然 試固 供 2 置圖 設 出描 輸掃 之射 7 照 2 僅 器可 淑 ’ 檢此 ’ 如 又[13 -t J ο 蔌 2 0 一—I 〇"! 腦部 電生 制產 控號 置信 裝描 台掃 一 二 有入 共輸 , 號 而信 察於 觀束 大子 擴離 之中 面集 表射 料照 試時 作同 ’ 筒 束鏡 子束 離 f 中離 集中 之集 筒二 鏡以 束在 子使 隹 P 葡 艮 中， 集又 4〇 50 36 A7 _____ 五、發明說明（8 ) 試料表面上情形下，亦可於獨立場所’進行獨立掃描方法 □ 其次就用來使二集中離子朿鏡筒之集中離子束照射位 置於同處所之調整方法加以說明u 首先，以第1集中離子束鏡筒2 1觀察試料2 5。試 料2 5水平放置，集中離子柬相對於試料2 5垂直入射。 此時，試料2 5例如爲正方形配置於網格上之網目等，其 以形狀尺寸分明者較佳。如圖3所示，已知試料2 5之企 望形狀調整於觀察畫面上待觀察之觀察像之縱橫比及直角 度。 經濟部智慧財產局員工消費合作社印製 接著以第2集中離子束鏡筒2 2觀察試料2 5。由於 試料2 5水平置放，故若第2集中離子束鏡筒之集中離子 束如圖2構成，即相對於試料表面法線，成6 0度之傾斜 •入射於試料表面。因此，如圖4所示。垂直於試料2 5 照射集中離子束之第1集中離子束鏡筒照射集中離子束於 自點A發射之集中離子束以試料表面之點〇爲中心，自點 B至點C之範圍。因此，若相對於試料2 5具有傾斜度， 照射集中離子束之第2集中離子束鏡筒2 2傾斜成，自點 X發射之集中離子束相對於試料表面，集中離子束之入射 角度爲9 0度，即照射集中離子束於自點γ至點z之範圍 。並且’此範圍與點B至點c之範圍-.致°由於具有傾斜 度’故實際上照射在自試料表面之點γ 1至點Z 1之範圍 。此時’圖4之試料表面法線方向於第1與第2集中離子 朿鏡筒之集中離子束照射範圍內不變^結果’可知，第2 -11 - <請先閱讀背面之注意事項再填寫本頁} 本紙張尺㈣針®國家標準（CNS)A4規格（2：1〇 X 297公爱） 465036 Λ7 B7 五、發明說明（9) (請先閱讀背面之注意事項再填寫本頁) 集中離子束之觀察像之縱橫比偏斜。因此’第2集中離子 束鏡筒2 2調整施加於偏轉電極之掃描信號’調整成，集 中離子束照射於以試料表面點0爲中心自點B至點C之範 圍。進一步，於此狀態下，試料2 5調整與以第1集中離 子束鏡筒2 1觀察時之觀察像相同之觀察像之觀察位置及 直角度。 且，若觀察像縱橫比之調整機能可與試料台2 4之傾 斜角度連動而變更，於試料台之傾斜角度範圍内，第1集 中離子束鏡筒2 1及第2集中離子束鏡筒2 2之觀察像即 經常與集中離子束相對於試料2 5垂直入射之相同視野下 觀察者相等。此時，若觀察像之觀察位置及直角度可進一 步與試料台2 4之傾斜連動而變更，即亦可校正試料台 2 4所具有的機械誤差。 茲藉如此調整之集中離子束裝置說明本發明第一實施 例之加工方法。 圖5顯示對同一加工區域濺射蝕刻之第1加工實施例 0 經濟部智慧財產局員工消費合作社印製 其係藉由照射第1及第2離子束於同一處所加工時之 剖面形狀。由於係簡單的仿畫，故未正確顯示剖面形狀， 僅呈現大槪形狀。惟，就濺射蝕刻加工而言，①集中離子 束相對於試料之入射角傾斜者之加工速度較快》圖8顯示 離子束之入射角度與單位電荷之加工堆積R v之關係。由 此可知，入射角度爲8 0度’加工速度最快。相較於②集 中離子束入射於平坦試料時，入射於試料角部者之加工速 -12- 本紙張尺度適用尹國國家標準（CNS)A4規格（210 x 2耵公釐） 465036 Α7 Β7 經濟部智慧財產局員工消費合作社印製 五、發明說明（1Q) 度較快。由於具有所述性質，故實際上，利用第2集中離 子束鏡筒2 2加工者進行速度較快而蝕刻角部。因此，相 較於圖5，實際上成角度之蝕刻較平滑之形狀。 圖6顯示對不同加工區域濺射蝕刻之第2加工實施例 。其成藉由照射集中離子朿於鄰接之加工區域予以加工時 之剖面形狀。此時，藉由相對於深度方向選擇加工區域爲 1 / s i η (惟係集中離子束之試料表面入射角度。相對 於法線之傾斜度），可使用於剖面觀察之加工具有效率。 此時’固然假設第1及第2集中離子束鏡筒2 1、2 2之 濺射蝕刻加工以相同加工速度進行，惟由於實際上如前述 ，相對於試料傾斜入射之集中離子束之濺射蝕刻加工速度 較快’故相對地，①第1集中離子束照射量較第2集中離 子束照射量多。②加工位置不密接而分離配置。③加工結 束後，藉第1集中離子束進行精加工。進行諸如此類處理 ，修正因加工速度不同造成之形狀歪斜。 7顯示對不同加工區域濺射蝕刻之第3加工實施例 。此例設定寬廣的第1集中離子束照射之加工區域，復設 定狹窄之第2集中離子束照射之加工區域。此係用於對寬 廣區域進行深濺射蝕刻加工情形之例子。其利用相對於試 料表面傾斜入射之第2集中離子束之濺射蝕刻加工速度較 相對於試料表面垂直入射之第1集中離子束之加工速度快 之事實。 又，固然未運用圖式說明，惟於同一加工區域及不同 加工區域情形下，亦可使試料傾斜，對試料表面傾斜照射 ----------^---』.^--------訂· <請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公楚） -13- 465036 Α7 Β7 五、發明說明（） 第1及第2集中離子束。任一方均可實現較對試料垂直照 射情形更快之加工速度ϋ (請先閱讀背面之注意事項再填寫本頁) 又，於截至目前爲止之說明中，固然藉由重疊、鄰接 加工區域來製作一加工穴，惟亦可雙方無關，對完全另一 區域加工。 並且，於實施上述加工之際，亦可使用協助濺射蝕刻 之輔助氣體。輔助氣體與被加工物起化學反應，使濺射蝕 刻加工高速化。又，--般說來，化學反應對被加工物質而 言有選擇性。 其次就沈積加工加以說明。 藉由一面噴塗沈積原料氣體於試料表面之不同區域， —面照射第1及第2集中離子束，形成薄膜於試料表面之 不同區域。此時，對試料傾斜入射集中離子束之第2集中 離子束快速進行與沈積同時進行之濺射蝕刻加工。因此， 藉由減小離子束電流量，縮短照射於一像素之照射時間， 可維持沈積速度。 經濟部智慧財產局員工消費合作社印製 又，亦可於試料表面之同一區域進行沈積。不在①照 射-集中離子束之像素近傍，對區域內配置於網格上之像 素照射另一集中離子束。不對②照射一集中離子束之像素 照射一定時間之另一集中離子束。根據此法則，照射集中 離子束。 由於上述第…法則對照射於一像素之集中離子束之沈 積原料氣體之影響不止對此像素，亦對周邊像素有效果， 故爲求無抑制此效果之結果，照射必要以上之集中離子束 -14- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 4650 36 Λ7 B7 五、發明說明（12) 〇 又，就上述第二法則而言，用於沈積之化學反應於集 中離子束照射後進行一定時問。藉由於此期間照射必要以 上之集中離子束，達到無抑制此效果之結。 產業上可利用性 如上述，安裝複數集中離子束於一試料室，各個集中 離子束鏡筒之集中離子束交叉於一點，使試料表面位於此 父叉處所。並且，藉由同時照射集中離子束於同.一加了 域或不同加工區域，可用較單一集中離子束鏡筒加工更矢 3 之時間加工。 --------— II ' --------訂. ~ t (請先閱讀背面之注音？事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 適 度 尺 張 紙 本 格 規 4 )A s) N (c 準 0 家 J釐 公 97A7 465036 ___—____ B7______ 5. Description of the invention (1) Field of the invention The present invention relates to the use of a concentrated ion beam processing device to perform sputter etching processing on the surface of samples of semiconductor integrated circuits, ceramic substrates, etc. to form a thin film deposition process. And other processing methods. BACKGROUND A concentrated ion beam processing device can scan a concentrated ion beam on the surface of a sample, detect secondary electrons and secondary ions generated from the surface of the sample, and use the distribution to perform an enlarged observation of the surface of the sample. The complex ion beam can be scanned on the surface of the sample, and the surface of the sample can be sputter-etched. Further, the gas constituting the raw material of the thin film can be introduced into the sample chamber, while spraying it on the surface of the sample, and scanning the concentrated ion beam on the surface of the sample to perform a deposition process for forming a thin film on the surface of the sample. The centralized ion beam processing device is used for this type of processing, and can perform cross-section processing and inspection of the laminated structure of the observation sample. As disclosed in Japanese Patent Application Laid-Open No. Hei 0 2 — 1 2 3 7 4 9, there is no known method of installing a plurality of concentrated ion beam lens barrels, using a concentrated ion beam lens, and an electron beam lens barrel. In the case of a device in which a plurality of concentrated ion beam barrels are installed, a part of the concentrated ion beam barrels are used for processing 'and another part is used for observation. When a concentrated ion beam barrel and an electron beam barrel are installed, the concentrated ion beam barrel is used for processing, and the ion beam barrel is used for observation. In either case, the side of the hole opened by sputtering etching was observed with an observation lens barrel. In this way, the surface of the sample is sputtered with uranium engraving and the exposed section is confirmed. -17 --- \ ------- installation -------- Please read the precautions on the back before filling (This page) The consumer cooperation of the Intellectual Property Bureau of the Ministry of Economic Affairs Du printed this paper The size of the paper applies the Chinese National Standard (CNS) A4 specification (2) 0x 297 public love) " 4-46 50 36 A7 B7 V. Description of the invention (2 〉 The process of recognizing the laminated structure of the sample is gradually miniaturized, making the latest semiconductor integrated circuits and ceramic sensors with complex manufacturing processes necessary and indispensable. However, although the time required for the sputtering etching process is concentrated with the ion beam mirror The performance of the tube is gradually shortened, but it still accounts for a large proportion of the entire program time. In terms of manufacturing and inspection procedures, shortening the time required for sputtering and etching processing has become a problem that must be solved. Inventions must simultaneously install multiple installations The concentrated ion beam of each concentrated ion chirped lens barrel is irradiated to the sample to perform the sputtering etching process. Generally, the time required for the sputtering etching process is based on the amount of ions that are incident on the -x- substance, ie, the dose Therefore, by repeating Concentrated ion beam cylinders can simultaneously illuminate the thallium ion beam, which can become several times as much as the concentration ion beam mirrors that can be used to achieve the dose achieved by each concentrated ion beam cylinder ° ---------- »-, S -------- Order. (Please read the notes on the back before filling out this page.) The statement is printed in a simple form by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Electrogram ί Π4 HQ 帋 明 甲Control. Talking about the example ... The whole example of the tube set. Mirror installation, adjustment, application, application, application, and application. The image is inspected by the real person. The collection has issued instructions to show the display of the display of the display of the display of the system is 1 2 3 4 5 6 7 Figures Figures Figures Figures Figure Moderate paper rule format M s) N (c quasi standard f 'centimeter 97 2 A7 465036 V. Description of the invention (3) Figure 8 is a graph illustrating the relationship between the incident angle of the concentrated ion beam and the processing volume. (Please read the precautions on the back before filling this page) Main component comparison table 1 Ion source section 2 Condensing lens 3 Masking electrode 4 Movable aperture 5 Deflecting electrode 6 Objective lens 9 Scanning signal generating section 10 Aperture control Manufacturing department 2 1 The first concentrated ion beam tube 2 2 The second concentrated ion beam tube 2 3 Sample chamber 2 4 Sample table 2 5 Sample 2 6 Vacuum pump Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economy 2 7 Detector 28 Gas The best form of the introduction device for implementing the invention Figure 1 shows an example of the concentrated ion beam lens barrel used in the present invention. The concentrated ion beam barrel is mainly composed of the ion source unit 1, the condenser lens 2, and the paper size. (CNS) A4 specification (210 X 297 mm) -6- Λ7 4 6 5 0 3 6 B7__ 5. Description of the invention (4) No electrode 3, movable diaphragm 4, deflection electrode 5, and objective lens 6. In addition, although not shown, there are optical axis correction electrodes, astigmatism correction electrodes, and the like. (Please read the precautions on the back before filling out this page) Generally, liquid metal gallium is used as the ion source. The liquid metal gallium stored in the liquid storage tank is supplied to the needle-shaped emitter u by surface tension, and the storage tank and the emitter are configured to be heated by the filament. An electric field is formed by one or a plurality of electrodes in the emitter part, and the gallium stored in the emitter part is pulled out into an ion beam. Since the transmitter applies a high voltage of + 5 to + 30 k V with respect to the ground potential, it accelerates under this electric field. The ion beam is focused by the condenser lens 2 ', and the objective lens 6 is focused on the surface of the sample 25. Figure 1 shows an Alnxon lens with high voltage and ground at three electrodes, but this is an example, and other types of lenses may be used. In addition, although the objective lens 6 is arranged at the position closest to the sample 25, this position may be changed according to the required performance and function. The movable aperture 4 has a plurality of through-holes with different diameters. The position of the through-holes is controlled by the aperture control unit 10, and the through-holes used are switched by changing the amount of the ion beam reaching the sample 25 by passing the ion beam through each of the through-holes. , Which is the sample current. You can adjust this position, the position of the through hole and the center of the ion beam are the same. Printed by a member of the Intellectual Property Bureau of the Ministry of Economic Affairs and a Consumer Cooperative, the masking electrode 3 is configured to generate a large electric field between the two electrodes. As soon as the same potential is applied, usually as soon as a ground is applied to each electrode, the ion beam reaches sample 25. However, if a signal with a large potential difference is applied to the electrodes of the shielding electrode 3 to generate a large electric field, the ion beam is deflected greatly, and when it comes to a shield such as the movable aperture 4, the ion beam will not reach the sample 25. The deflection electrode 5 is composed of at least two sets of opposite electrode electrodes. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 x 297 mm). Λ7 465036 __B7_____ V. Description of the invention (5) Included in each The electric field between the electrodes' secondary element controls the orbit of the ion beam (please read the precautions on the back before filling this page). The power applied to each electrode and the movable aperture 4 is controlled by a computer. The signals applied to the shielding electrode 3 and the deflection electrode are generated from the scanning signal generating section 9. Thereby, whether to irradiate the ion beam to the sample 25 can be determined according to the sample irradiation position of the ion beam. The output signal from the detector 27 is input to the scanning signal generating section 9 for processing. The detector 27 is used to detect the irradiation position of the ion beam, and the secondary charged particles generated by the irradiation of the ion beam at this irradiation position. The output signal of the electrical signal can be checked and memorized, thereby making it possible to observe the surface of the sample 25. Fig. 2 shows an example of a device in which the present invention is not implemented. The concentrated ion beam lens barrel illustrated in FIG. 1 is installed in the two sample chambers 23. The first concentrated ion beam lens barrel 2 1 is disposed at a position where the ion beam is incident perpendicularly to the horizontally disposed sample 2 5. The second concentrated ion beam barrel 22 is set at different angles. The example in Figure 2 is installed at a 60-degree tilt. In addition, on the surface of the sample 25 placed on the sample table 24, the ion beam centers of the concentrated ion beam barrels are arranged to intersect. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The sample table 2 4 can be moved along at least three axes of the horizontal axis X, Y and vertical axis. The X and Y axes in the horizontal direction are used for the observation of the sample 25 and the determination of the processing device. Also, on the Z axis, the height of the sample surface must always be maintained at the intersection of the concentrated ion beam emitted from the two concentrated ion beam lens barrels. position. By maintaining the height of the sample surface at the intersection of the concentrated ion beam, the concentrated ion beam irradiation position of the two concentrated ion beam barrels can be at the same position and position of the sample surface. Concentrated ion beam The size of this paper is applicable to the national standard (CNS) A4 (2) 0 X 297 mm. -8- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs α 6 5 0 3 6 Λ7 Β7 V. Invention Explanation (6) Fine adjustment of the adjustment of the irradiation position by electrical method. However, if it is not consistent with the predetermined position on the sample table 24, it will exceed the fine adjustment range. Therefore, it is necessary to move the Z-axis direction of the sample table 24. In addition, 'it may have a tilted T-axis' and a rotated R-axis. The detector 27 detects the secondary electric band particles (electrons or ions) generated by irradiating the concentrated ion beam on the sample 25. Although the gas introduction device 28 is not shown in detail, it includes a container for storing gas or gas raw materials, a nozzle for spraying gas on the surface of the sample 25, a pipeline connecting the container and the nozzle, and a path in the middle of the pipeline to open and close the pipeline. valve. The gas system uses the C V D (chemical vapor deposition) method of beam auxiliary ribs to form raw materials for depositing films. The beam-assisted C V D method generally uses a molecular gas containing a material of a thin film deposited on the surface of a sample. The gas sprayed on the surface of the sample is adsorbed on the surface of the sample. In this state, if a concentrated ion beam 'molecular gas is irradiated, it will decompose under this kinetic energy. At this time, the decomposed gas component is discharged out of the sample chamber by the vacuum pump 26, and the solid component becomes a thin film and remains on the surface of the sample. At this time, the concentrated ion beam is also sputter-etched simultaneously with the deposition. Therefore, it is necessary to control the introduction amount of the source gas and the irradiation amount of the concentrated ion beam because the speed of the 'deposition forming film will be higher than the processing speed of the sputter etching'. The gas introduced into the sample chamber 23 by the gas introduction device 28 may be an etching auxiliary gas which is sprayed on the surface of the sample simultaneously with the irradiation of the concentrated ion beam to increase the processing speed of the sputtering etch. Etching auxiliary gas is generally added by irradiation with concentrated ion beam. — —-ΊΙΓΙ — i i -------- Order (Please read the precautions on the back before filling this page) This paper Standards apply to Chinese National Standard (CNS) A4 specifications (210 X 297 public love) -9-465036 A7 B7 V. Description of the invention (7) The chemical reaction between the work material and the formation of molecular gas that is combined with the processed object. The vacuum pump 2 6 is discharged out of the sample chamber 2 3. Normally, if we observe the sputtering etching process, it is found that the workpiece to be sputter-etched will fall down and then adhere to the surface of the sample. Therefore, it is necessary to repeatedly perform sputtering and engraving. Since the use of an etching assist gas can suppress the re-attachment, the processing time of the sputter etching process can be shortened u Generally speaking, since the etching assist gas will chemically react with specific substances, it may not be able to afford chemically reactive substances Using different processing speeds for selective etching. In addition, a gas which reacts with a specific sample and suppresses the progress of the sputter etching process is also known. The difference in processing speed caused by the material can be used for selective etching. Moreover, FIG. 1 shows only one gas introduction device 2 8 ′, but a plurality of gas introduction devices 2 8 which use gases separately according to the purpose may be used. 2 ′ A gas introduction device having pipes and valves corresponding to a plurality of gas storage containers is used. 2 8 II ---, 丨 丨 '--- ^ i -------- Order (Please read the precautions on the back before filling this page) Empty 3 straight; 2 6 room 2 pump test empty true charging Lending Qi 6 big 2 will not be a mirror can beam Yizi Weili 'in the set picture and Wei 3 Ran 2 solid room, and try again. Gas bh Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Attachment-its tightly closed 'Load source decoration system's control display 5 Figure 2 Unexpectedly test the supply 2 Set the map to set up the scan 7 7 Photo 2 Only Ke Keshu' check this' if again [ 13 -t J ο 蔌 2 0 一 —I 〇 "! Brain Electron Production Control No. Confidence Equipment Scanning Platform Scans One or Two to Enter and Lose No., and the Investigate is in the middle of the expansion of Guanshu The surface shots are tested in the same way as the tube beam mirror. The tube two mirrors in the middle of the focus set are bundled in the sub-puppet, P 4040, 36 A7 _____ V. Description of the invention (8) Samples On the surface, an independent scanning method can also be performed at a separate location. □ Secondly, the adjustment method used to make the concentrated ion beam irradiation positions of the two concentrated ion beams in the same place will be explained. First, the first concentrated ion beam Lens tube 2 1 Observe sample 2 5. Sample 25 was placed horizontally, and the concentrated ion beam was incident perpendicularly with respect to sample 25. At this time, the sample 25 is, for example, a mesh or the like arranged on a grid in a square shape, and it is preferable that the shape and size are clear. As shown in FIG. 3, the desired shape of the known sample 25 is adjusted to the aspect ratio and right angle of the observation image to be observed on the observation screen. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Then observe the sample 2 5 with the second concentrated ion beam lens barrel 2 2. Because the sample 25 is placed horizontally, if the concentrated ion beam of the second concentrated ion beam lens barrel is constituted as shown in FIG. 2, it is inclined at 60 degrees with respect to the normal of the sample surface. • Incident on the sample surface. Therefore, as shown in FIG. 4. The first concentrated ion beam irradiating the concentrated ion beam perpendicularly to the sample 2 5 irradiates the concentrated ion beam. The concentrated ion beam emitted from point A is centered on point 0 on the surface of the sample and ranges from point B to point C. Therefore, if there is an inclination with respect to the sample 25, the second concentrated ion beam barrel 22 that irradiates the concentrated ion beam is inclined so that the concentrated ion beam emitted from the point X with respect to the sample surface has an incident angle of the concentrated ion beam of 9 0 degree, that is, the concentrated ion beam is irradiated in a range from the point γ to the point z. In addition, "this range and the range from point B to point c-. Because ° has an inclination", it actually irradiates the point γ 1 to the point Z 1 on the surface of the sample. At this time, 'the normal direction of the surface of the sample in FIG. 4 does not change within the concentrated ion beam irradiation range of the first and second concentrated ion beam lens barrels ^ result', it can be seen that Sections 2 -11-< Please read the precautions on the back first Refill this page} This paper Ruler Needle® National Standard (CNS) A4 specification (2: 10 × 297 public love) 465036 Λ7 B7 V. Description of the invention (9) (Please read the precautions on the back before filling this page ) The aspect ratio of the observed image of the focused ion beam is skewed. Therefore, the "second concentrated ion beam lens barrel 22 adjusts the scanning signal applied to the deflection electrode" so that the concentrated ion beam is irradiated in a range from point B to point C centered on point 0 of the sample surface. Further, in this state, the sample 25 adjusts the observation position and the right angle of the observation image which are the same as the observation image when the first focused ion beam lens barrel 21 is observed. Moreover, if the adjustment function of the aspect ratio of the observation image can be changed in conjunction with the inclination angle of the sample table 24, the first concentrated ion beam lens barrel 2 and the second concentrated ion beam lens barrel 2 can be changed within the range of the inclination angle of the sample table. The observation image of 2 is often equal to the observer in the same field of view where the concentrated ion beam is incident perpendicular to the sample 25. At this time, if the observation position and the right angle of the observation image can be further changed in conjunction with the tilt of the sample table 24, the mechanical error of the sample table 24 can also be corrected. The processing method according to the first embodiment of the present invention will be described by using the concentrated ion beam apparatus thus adjusted. Fig. 5 shows a first processing example of sputtering etching of the same processing area. 0 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. It is a cross-sectional shape when the first and second ion beams are processed at the same place. Because it is a simple imitation, the cross-sectional shape is not displayed correctly, and only the large ridge shape is displayed. However, in terms of sputtering etching processing, ① the processing speed of a concentrated ion beam with a relatively inclined incident angle with respect to the sample is faster. FIG. 8 shows the relationship between the incident angle of the ion beam and the processing stack R v per unit charge. From this, it can be seen that the incident angle is 80 degrees and the processing speed is the fastest. Compared with ② when the concentrated ion beam is incident on a flat sample, the processing speed of those incident on the corner of the sample is -12- This paper size applies to the national standard (CNS) A4 (210 x 2 mm) 465036 Α7 Β7 Economic The Ministry of Intellectual Property Bureau's Employee Cooperatives printed five. The invention description (1Q) was faster. Because of the above-mentioned properties, in fact, the processor using the second concentrated ion beam lens barrel 22 performs a faster speed and etches the corners. Therefore, compared to FIG. 5, the angled etching is actually a smoother shape. FIG. 6 shows a second processing example of sputtering etching to different processing regions. It is formed into a cross-sectional shape when it is processed by irradiating concentrated ions on adjacent processing areas. At this time, by selecting the processing area relative to the depth direction as 1 / s i η (but the angle of incidence of the sample surface of the concentrated ion beam. Inclination with respect to the normal), the processing for section observation can be made efficient. At this time, although it is assumed that the sputter etching process of the first and second concentrated ion beam barrels 2 1 and 2 2 is performed at the same processing speed, in fact, as described above, the sputtering of the concentrated ion beam incident at an oblique incidence with respect to the sample is performed as described above. The etching processing speed is relatively high. Therefore, ① the first concentrated ion beam irradiation amount is larger than the second concentrated ion beam irradiation amount. ② The processing positions are not tightly separated and arranged separately. ③ After the processing is completed, the first concentrated ion beam is used for finishing. Perform such processing to correct the distortion of the shape caused by the different processing speed. 7 shows a third processing example of sputtering etching to different processing regions. In this example, a wide processing area irradiated by the first concentrated ion beam is set, and a narrow processing area irradiated by the second concentrated ion beam is set. This is an example of a case where a deep-sputter etching process is performed on a wide area. It utilizes the fact that the sputtering etching processing speed of the second concentrated ion beam incident obliquely to the sample surface is faster than the processing speed of the first concentrated ion beam incident perpendicularly to the sample surface. Also, although no illustration is used, in the case of the same processing area and different processing areas, the sample can also be tilted and the surface of the sample can be tilted and irradiated. -------- ^^ ------- Order · < Please read the notes on the back before filling in this page) This paper size is applicable to China National Standard (CNS) A4 (210 X 297 Gongchu) -13- 465036 Α7 Β7 V. DESCRIPTION OF THE INVENTION () First and second concentrated ion beams. Either party can achieve a faster processing speed than the case where the sample is irradiated vertically (please read the precautions on the back before filling this page). In the description so far, of course, it is made by overlapping and adjacent processing areas. One processing point can be processed in completely another area regardless of the two parties. In addition, when performing the above-mentioned processing, an auxiliary gas that assists sputtering etching may be used. The auxiliary gas reacts chemically with the workpiece, which accelerates the sputter etching process. And, in general, chemical reactions are selective for the substance being processed. The deposition process is explained next. By spraying and depositing the raw material gas on different areas of the sample surface, the first and second concentrated ion beams are irradiated on one surface to form thin films on different areas of the sample surface. At this time, the second concentrated ion beam incident on the sample at an oblique incidence of the concentrated ion beam is rapidly subjected to a sputtering etching process simultaneously with the deposition. Therefore, by reducing the amount of ion beam current and shortening the irradiation time for one pixel, the deposition speed can be maintained. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. It can also be deposited on the same area of the sample surface. Not in the vicinity of the irradiated-concentrated ion beam pixels, the pixels arranged on the grid in the area are irradiated with another concentrated ion beam. Pixels irradiated with ② one concentrated ion beam are not irradiated with another concentrated ion beam for a certain time. According to this rule, a concentrated ion beam is irradiated. Since the above-mentioned principle of ... affects the deposition source gas of a concentrated ion beam irradiated on a pixel, it has an effect not only on this pixel, but also on surrounding pixels. Therefore, in order to prevent the effect of suppressing this effect, irradiate the concentrated ion beam more than necessary- 14- This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 4650 36 Λ7 B7 V. Description of the invention (12) 〇 In terms of the second rule above, the chemical reaction used for deposition is After the focused ion beam is irradiated for a certain period of time. By irradiating more concentrated ion beams than necessary during this period, the effect of not suppressing this effect is achieved. Industrial Applicability As described above, a plurality of concentrated ion beams are installed in a sample chamber, and the concentrated ion beams of the respective concentrated ion beam barrels intersect at one point, so that the sample surface is located at the parent fork space. In addition, by simultaneously irradiating the concentrated ion beam to the same plus one field or different processing regions, it can be processed in a shorter time than a single concentrated ion beam barrel. --------— II '-------- Order. ~ T (Please read the phonetic on the back? Matters before filling out this page) The Intellectual Property Bureau of the Ministry of Economic Affairs, the Consumer Cooperatives, prints an appropriate ruler Paper rule 4) A s) N (c quasi 0 J centimeter 97