JP2001006605A - Focusing ion beam processing device and processing method for specimen using focusing ion beam - Google Patents
Focusing ion beam processing device and processing method for specimen using focusing ion beamInfo
- Publication number
- JP2001006605A JP2001006605A JP11171801A JP17180199A JP2001006605A JP 2001006605 A JP2001006605 A JP 2001006605A JP 11171801 A JP11171801 A JP 11171801A JP 17180199 A JP17180199 A JP 17180199A JP 2001006605 A JP2001006605 A JP 2001006605A
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- focused ion
- sample
- processing apparatus
- image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 80
- 238000003672 processing method Methods 0.000 title 1
- 230000001678 irradiating effect Effects 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 10
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 6
- 229910052753 mercury Inorganic materials 0.000 claims description 6
- 229910001338 liquidmetal Inorganic materials 0.000 claims description 4
- 238000003384 imaging method Methods 0.000 claims description 3
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 claims description 2
- 229910052805 deuterium Inorganic materials 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000002047 photoemission electron microscopy Methods 0.000 description 15
- 150000002500 ions Chemical class 0.000 description 11
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000001886 ion microscopy Methods 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は集束イオンビーム加
工装置に係わり、特に試料の観察と加工位置の決定に関
する。The present invention relates to a focused ion beam processing apparatus, and more particularly to observation of a sample and determination of a processing position.
【０００２】[0002]
【従来の技術】集束イオンビーム加工装置は、主に液体
金属イオンを用いたイオン源から引き出して３０ｋｅＶ
程度に加速させたイオンビームを静電レンズ及びアパー
チャにより集束させ、その集束イオンビームを試料表面
の所定の位置で走査することにより試料表面のスパッタ
加工を行う装置であり、イオンビーム加工の終点検出方
法等の発明（例えば特開平６−２６０１３０号公報）が
されてきた。従来、イオンビーム加工位置の決定には集
束イオンビームの照射及び走査によって放出される粒子
の強度分布から得られる像（ＳＩＭ：Ｓｃａｎｎｉｎｇ
Ｉｏｎ Ｍｉｃｒｏｓｃｏｐｙ）を用いている（特開
平６−２９５０５５号公報）。2. Description of the Related Art A focused ion beam processing apparatus is mainly used for extracting 30 keV from an ion source using liquid metal ions.
This device focuses an ion beam accelerated to a certain degree by an electrostatic lens and an aperture, and performs sputtering processing of the sample surface by scanning the focused ion beam at a predetermined position on the sample surface. Inventions such as methods (for example, JP-A-6-260130) have been made. 2. Description of the Related Art Conventionally, to determine an ion beam processing position, an image (SIM: Scanning) obtained from an intensity distribution of particles emitted by irradiation and scanning of a focused ion beam.
Ion Microscopy) (JP-A-6-295055).
【０００３】また、試料観察には同一チャンバに走査電
子顕微鏡（ＳＥＭ：ＳｃａｎｎｉｇＥｌｅｃｔｒｏｎ
Ｍｉｃｒｏｓｃｏｐｙ）を備えた集束イオンビーム加工
装置も開示されている（特公平８−７１２１号公報）。In order to observe a sample, a scanning electron microscope (SEM: Scanning Electron) is placed in the same chamber.
A focused ion beam processing apparatus equipped with a Microscope is also disclosed (Japanese Patent Publication No. 8-7121).
【０００４】[0004]
【発明が解決しようとする課題】特開平６−２９５０５
５号公報に開示された発明では、集束イオンビームによ
るＳＩＭ観察をビーム電流の下げた状態で行うが、試料
表面はイオンビームによるスパッタで破壊され、試料を
薄片化させるに連れてＳＩＭ観察による試料へのダメー
ジが懸念される。Problems to be Solved by the Invention Japanese Patent Laid-Open No. 6-29505
In the invention disclosed in Japanese Patent Application Publication No. 5 (1999) -2002, SIM observation using a focused ion beam is performed with a reduced beam current, but the sample surface is destroyed by sputtering with an ion beam, and as the sample is thinned, the sample obtained by SIM observation is used. There is concern about the damage to.
【０００５】また、特公平８−７１２１号公報に開示さ
れた発明は試料観察にＳＥＭを備えた集束イオンビーム
加工装置では、試料に対する走査電子線の入射方向や二
次電子の検出方向によって試料の見え方が異なること
や、ＳＥＭを同一の真空チャンバに備えることによって
装置の大型化、試料周りの自由度に制限がかかるという
問題がある。The invention disclosed in Japanese Patent Publication No. 8-7121 discloses a focused ion beam processing apparatus equipped with a SEM for observing a sample. There are problems that the appearance is different and that the SEM provided in the same vacuum chamber increases the size of the device and limits the degree of freedom around the sample.
【０００６】[0006]
【課題を解決するための手段】上記課題を解決する本発
明は、イオンビームを発生させる手段と、前記イオンビ
ームを集束させ試料表面で走査する手段と、前記集束イ
オンビーム照射によって試料表面から放出された二次電
子を検出する手段と、前記検出された二次電子の信号強
度を前記集束イオンビームの走査と同期して表示する手
段と、且つ紫外線を照射する手段と、前記紫外線によっ
て試料表面から放出される光電子を結像及び拡大する手
段と、検出器によって光電子像を得るための手段を有す
ることを特徴とする集束イオンビーム加工装置である。SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention comprises a means for generating an ion beam, a means for focusing the ion beam and scanning the surface of the sample, and a method for irradiating the focused ion beam from the sample surface. Means for detecting the detected secondary electrons, means for displaying the signal intensity of the detected secondary electrons in synchronization with the scanning of the focused ion beam, and means for irradiating ultraviolet rays, and the sample surface is irradiated with the ultraviolet rays. 1. A focused ion beam processing apparatus comprising: means for imaging and enlarging photoelectrons emitted from a device; and means for obtaining a photoelectron image by a detector.
【０００７】そして、上記本発明の集束イオンビーム加
工装置は、さらなる特徴として、「イオンビームを集束
させるレンズ系及び光電子像を結像させるレンズ系及び
光電子像を得る検出器を同軸に配置した」こと、「集束
イオンビーム、光電子に用いる同軸に配置されたレンズ
系を一部共有化して用いる」こと、「検出器にＭＣＰ
（Ｍｉｃｒｏ Ｃｈａｎｎｅｌ Ｐｌａｔｅ）とＰＳＤ
（Ｐｏｓｉｔｉｏｎ Ｓｅｎｓｉｔｉｖｅ Ｄｅｔｅｃ
ｔｏｒ）を組み合わせて用いる」こと、「イオンビーム
を発生させる手段は、液体金属によるイオン源と、静電
レンズで集束させる手段を有する」こと、「紫外線源に
水銀ランプまたは重水素ランプを用いた」こと、を含む
ものである。Further, the focused ion beam processing apparatus of the present invention has a further feature that "a lens system for focusing an ion beam, a lens system for forming a photoelectron image, and a detector for obtaining a photoelectron image are coaxially arranged." That "the coaxially arranged lens system used for the focused ion beam and the photoelectrons is partially shared and used";
(Micro Channel Plate) and PSD
(Position Sensitive Detect
using a mercury lamp or a deuterium lamp as the ultraviolet light source. "," The means for generating an ion beam has a liquid metal ion source and a means for focusing with an electrostatic lens. " ”.
【０００８】また、本発明の集束イオンビーム装置は、
試料表面に集束イオンビームを照射及び走査する手段と
紫外線を照射する手段を有し、前記イオンビームの走査
により得られる試料の二次電子像と前記紫外線照射によ
り得られる試料の光電子像を対応させ、前記光電子像に
基づき前記イオンビームによる加工位置を決定する手段
を備えることを特徴とする。Further, the focused ion beam apparatus of the present invention comprises:
A means for irradiating and scanning a focused ion beam on the sample surface and a means for irradiating ultraviolet light, and making a secondary electron image of the sample obtained by scanning the ion beam correspond to a photoelectron image of the sample obtained by irradiation of the ultraviolet light; Means for determining a processing position by the ion beam based on the photoelectron image.
【０００９】さらに、本発明は、集束イオンビームによ
り試料表面を加工する方法において、集束イオンビーム
の走査により得られる二次電子像と紫外線照射により得
られる光電子像が一致するように予めレンズ系の調整を
行った後、レンズ系の調整値に基づき光電子像から加工
位置を決定することを特徴とする集束イオンビームを用
いる試料の加工方法に関する。Further, according to the present invention, in a method of processing a sample surface with a focused ion beam, a lens system is preliminarily adjusted so that a secondary electron image obtained by scanning with the focused ion beam and a photoelectron image obtained by irradiating ultraviolet rays coincide with each other. The present invention relates to a method for processing a sample using a focused ion beam, wherein a processing position is determined from a photoelectron image based on an adjustment value of a lens system after the adjustment.
【００１０】[0010]
【作用】本発明の集束イオンビーム加工装置は、試料に
紫外線を照射する手段と、紫外線照射によって試料表面
から放出される光電子を結像させるレンズ系と、光電子
像を得る二次元の位置検出器を備えたもので、それらを
用いた光電子顕微鏡（ＰＥＥＭ：Ｐｈｏｔｏ Ｅｌｅｃ
ｔｒｏｎ Ｅｍｉｓｓｉｏｎ Ｍｉｃｒｏｓｃｏｐｙ）
による試料観察により前記の課題を解決する。すなわ
ち、ＰＥＥＭは試料表面から放出される光電子を加速
し、レンズで結像及び拡大することで表面像を得、表面
を観察する方法であり、非破壊な試料観察を行うことが
できるものである。The focused ion beam processing apparatus of the present invention comprises a means for irradiating a sample with ultraviolet light, a lens system for forming photoelectrons emitted from the sample surface by the irradiation of ultraviolet light, and a two-dimensional position detector for obtaining a photoelectron image. And a photoelectron microscope (PEEM: Photo Elec) using them.
Tron Emission Microscopy)
The above-mentioned problem is solved by the sample observation by the above. That is, PEEM is a method of accelerating photoelectrons emitted from the sample surface, forming and enlarging the image with a lens to obtain a surface image, and observing the surface, which enables nondestructive sample observation. .
【００１１】したがって、本発明の集束イオンビーム加
工装置によれば、集束イオンビーム加工において、試料
観察を紫外線照射による光電子像観察により、試料にダ
メージを与えること無く試料観察ができる。Therefore, according to the focused ion beam processing apparatus of the present invention, in the focused ion beam processing, the sample can be observed without damaging the sample by observing the photoelectron image by irradiating ultraviolet rays.
【００１２】また、ＰＥＥＭを集束イオンビーム加工装
置と同軸に配置させ、イオンビームの集束レンズ系の一
部をＰＥＥＭの結像レンズとして共有化を図ることで、
コンパクトな光学系ができ、試料ステージ周辺の自由度
を確保することができる。Further, by arranging the PEEM coaxially with the focused ion beam processing apparatus and sharing a part of the focusing lens system of the ion beam as a PEEM imaging lens,
A compact optical system can be obtained, and the degree of freedom around the sample stage can be secured.
【００１３】また、紫外線照射方向に関わらず試料の光
電子像はＳＩＭ像と同じ方向からの観察像となるため、
イオンビーム加工位置の決定が簡易となる。Further, since the photoelectron image of the sample is an observation image from the same direction as the SIM image regardless of the irradiation direction of the ultraviolet light,
The determination of the ion beam processing position is simplified.
【００１４】紫外線照射によるＰＥＥＭは、空間分解能
はＳＥＭに比べて劣るが、拡大率は光学顕微鏡よりは高
く、また、電子線などの荷電粒子の照射を避けたい試料
にとって有効である。[0014] PEEM by ultraviolet irradiation is inferior in spatial resolution to SEM, but has a higher magnification than an optical microscope, and is effective for a sample in which it is desired to avoid irradiation of charged particles such as electron beams.
【００１５】[0015]
【発明の実施の形態】以下、本発明の実施形態を具体的
な実施例に基づいて説明するが、本発明はこれらの実施
例に限定されるものではない。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described based on specific examples, but the present invention is not limited to these examples.
【００１６】[0016]
【実施例】本発明の実施例について図１を用いて説明す
る。１は試料、２は粗動及び微動が可能な５軸（Ｘ−Ｙ
−Ｚ方向並進、ティルト、面内回転）の試料ステージ、
３は水銀ランプを用いた紫外線照射装置、４はＳＩＭ観
察用の二次電子検出器である。ＰＥＥＭ及び集束イオン
ビーム加工の静電レンズ系として、静電レンズ５，ＰＥ
ＥＭ用の対物絞り６、静電レンズ７、偏向電極８、静電
レンズ９，ＰＥＥＭ用の検出器１０がレンズ鏡筒部１１
内に同軸配置されている。尚、検出器１０はφ４０ｍｍ
のＭＣＰ（Ｍｉｃｒｏ Ｃｈａｎｎｅｌ Ｐｌａｔｅ）
とＰＳＤ（Ｐｏｓｉｔｉｏｎ Ｓｅｎｓｉｔｉｖｅ Ｄ
ｅｔｅｃｔｏｒ）で構成され、中心にはφ０．５ｍｍの
スリットを設け、イオンビームが通過できるようになっ
ている。そして、イオン銃は従来の集束イオンビーム加
工装置と同様に、固定絞り１２、ブランキング電極１
３、可動絞り１４、ビーム集束用コンデンサレンズ１
５、引き出し電極１６、Ｇａ等の液体金属によるイオン
源１７で構成され、レンズ鏡筒部１１内に配置されてい
る。以上１〜１７の各装置は紫外線照射用の石英ポート
１８を備えた真空チャンバ１９内で構成されており、レ
ンズ鏡筒部１１は差動排気により真空が維持されてい
る。尚、レンズ鏡筒部１１とイオン源１７は試料１に対
してそれぞれ数十ｋＶの電位差を与えられるように構成
されている。An embodiment of the present invention will be described with reference to FIG. 1 is a sample, 2 is a 5-axis (X-Y) capable of coarse movement and fine movement
-Sample stage with -Z translation, tilt, in-plane rotation)
3 is an ultraviolet irradiation device using a mercury lamp, and 4 is a secondary electron detector for SIM observation. As an electrostatic lens system for PEEM and focused ion beam processing, an electrostatic lens 5, PE
The objective aperture 6 for EM, the electrostatic lens 7, the deflection electrode 8, the electrostatic lens 9, and the detector 10 for PEEM are a lens barrel 11
It is coaxially arranged inside. The detector 10 has a diameter of 40 mm.
MCP (Micro Channel Plate)
And PSD (Position Sensitive D)
and a slit having a diameter of 0.5 mm is provided at the center so that an ion beam can pass therethrough. The ion gun has a fixed aperture 12 and a blanking electrode 1 as in a conventional focused ion beam processing apparatus.
3, movable aperture 14, condenser lens 1 for beam focusing
5, an extraction electrode 16, an ion source 17 made of a liquid metal such as Ga, etc., and arranged in the lens barrel 11. Each of the above devices 1 to 17 is configured in a vacuum chamber 19 provided with a quartz port 18 for ultraviolet irradiation, and the lens barrel 11 is maintained in vacuum by differential evacuation. The lens barrel 11 and the ion source 17 are configured so that a potential difference of several tens kV can be given to the sample 1.
【００１７】ＰＥＥＭ観察の実施例を図１を用いて説明
する。先ず、放出される光電子を加速させるために、レ
ンズ鏡筒部１１は接地された試料１及び真空チャンバ１
９に対して数ｋＶ〜数十ｋＶの電圧を印加しておく。次
に、水銀ランプを用いた紫外線照射装置３で紫外線を石
英ポート１８を通して試料１に照射する。尚、照射のＯ
Ｎ／０ＦＦには真空チャンバ１９の外に設けたシャッタ
ー（不図示）によって行う。An embodiment of the PEEM observation will be described with reference to FIG. First, in order to accelerate the emitted photoelectrons, the lens barrel 11 is connected to the grounded sample 1 and the vacuum chamber 1.
A voltage of several kV to several tens kV is applied to 9. Next, the sample 1 is irradiated with ultraviolet rays through the quartz port 18 by the ultraviolet irradiation device 3 using a mercury lamp. The irradiation O
The N / OFF is performed by a shutter (not shown) provided outside the vacuum chamber 19.
【００１８】使用する紫外線には本実施例の水銀ランプ
のようにエネルギーの低い白色光を用い、低エネルギー
電子を重点に放出させる。低エネルギー電子の放出は表
面の仕事関数や表面形状に敏感なため、表面状態を反映
させた像が得られ、高エネルギーの紫外線照射に比べて
表面像の空間分解能が向上される。As the ultraviolet rays to be used, low-energy white light is used as in the mercury lamp of this embodiment, and low-energy electrons are mainly emitted. Since the emission of low-energy electrons is sensitive to the work function and surface shape of the surface, an image reflecting the surface state is obtained, and the spatial resolution of the surface image is improved as compared with the irradiation of high-energy ultraviolet rays.
【００１９】そして、試料１とレンズ鏡筒部１１の間で
放出された光電子を数ｋｅＶ〜数十ｋｅＶに加速させ
る。加速させた光電子は静電レンズ５、対物絞り６、静
電レンズ７、偏向電極８、静電レンズ９により、検出器
１０に拡大及び結像される。尚、静電レンズ５は対物レ
ンズとして試料に対するフォーカス、静電レンズ７は中
間レンズとして倍率調整、偏向電極８は像のシフト、静
電レンズ９は投影レンズとして検出器１０に対するフォ
ーカスを行う。検出器１０に到達した光電子はＭＣＰで
増幅され、ＰＳＤで位置検出し、１０２４×１０２４ピ
クセルのデジタル画像としてコンピューター（不図示）
で観察及び記録を行う。尚、ＰＥＥＭ観察と集束イオン
ビーム加工と組み合わせて使用する場合、イオンビーム
をブランキング電極１３により固定絞り１２を通らない
よう偏向させておく必要があり、更にレンズ鏡筒部１１
とイオン源１７の電位が同じ場合ではイオンビームが引
き出されなくて済む。Then, the photoelectrons emitted between the sample 1 and the lens barrel 11 are accelerated to several keV to several tens keV. The accelerated photoelectrons are enlarged and imaged on the detector 10 by the electrostatic lens 5, the objective aperture 6, the electrostatic lens 7, the deflecting electrode 8, and the electrostatic lens 9. The electrostatic lens 5 focuses on a sample as an objective lens, the electrostatic lens 7 adjusts magnification as an intermediate lens, the deflection electrode 8 shifts an image, and the electrostatic lens 9 focuses on a detector 10 as a projection lens. The photoelectrons that have reached the detector 10 are amplified by the MCP, position-detected by the PSD, and converted into a digital image of 1024 × 1024 pixels by a computer (not shown).
Observe and record with. When PEEM observation and focused ion beam processing are used in combination, it is necessary to deflect the ion beam by the blanking electrode 13 so as not to pass through the fixed stop 12.
When the potential of the ion source 17 is the same as that of the ion source 17, the ion beam need not be extracted.
【００２０】本装置の空間分解能はシリコンウエハ上に
ストライプ状の金パターンを蒸着したものを試料１とし
て用いチェックした。先ず試料１とレンズ鏡筒部間１１
に電圧１５ｋＶを印加し、放出光電子の加速電圧を設定
する。紫外線は水銀ランプを用いた紫外線照射装置３で
石英ポート１８から試料１に照射した。得られた像か
ら、金ストライプのエッジプロファイルのコントラスト
差が２０％〜８０％の距離を空間分解能として定義し測
定した結果、空間分解能約１００ｎｍが得られた。The spatial resolution of the apparatus was checked using a sample 1 obtained by depositing a stripe-shaped gold pattern on a silicon wafer. First, between the sample 1 and the lens barrel 11
Is applied to set the acceleration voltage of the emitted photoelectrons. The sample 1 was irradiated with ultraviolet rays from the quartz port 18 by an ultraviolet irradiation device 3 using a mercury lamp. From the obtained image, a distance where the contrast difference of the edge profile of the gold stripe was 20% to 80% was defined and measured as a spatial resolution. As a result, a spatial resolution of about 100 nm was obtained.
【００２１】集束イオンビーム加工の実施例を図２を用
いて説明する。先ず、イオンビームの引き出し及び加速
のために、イオン源１７に３０ｋＶの電圧を印加し、レ
ンズ鏡筒部１１は接地された試料１及び真空チャンバ１
９と同電位にしておく。次に、Ｇａイオンビームはイオ
ン源１７から引き出し３０ｋｅＶに加速し、コンデンサ
レンズ１５で一旦集束させ、可動絞り１４及び固定絞り
１２で適当なビーム径に絞り、対物レンズとして使用す
る静電レンズ７で試料表面に集束させる。集束イオンビ
ームは試料表面で偏向電極８によるＸ−Ｙ方向の走査及
び照射しスパッタ加工を行う。そして、ＳＩＭ像の観察
では上記のように走査イオンビームの照射により試料表
面から放出される二次電子を二次電子検出器４により検
出し、走査と同期して二次電子強度を表し、二次電子像
を得る。An embodiment of focused ion beam processing will be described with reference to FIG. First, a voltage of 30 kV is applied to the ion source 17 for extracting and accelerating the ion beam, and the lens barrel 11 is connected to the grounded sample 1 and the vacuum chamber 1.
The same potential as 9 is set. Next, the Ga ion beam is extracted from the ion source 17, accelerated to 30 keV, once focused by the condenser lens 15, reduced to an appropriate beam diameter by the movable diaphragm 14 and the fixed diaphragm 12, and then reduced by the electrostatic lens 7 used as an objective lens. Focus on the sample surface. The focused ion beam scans and irradiates the sample surface in the X and Y directions by the deflection electrode 8 to perform sputtering. In the observation of the SIM image, the secondary electrons emitted from the sample surface by the irradiation of the scanning ion beam are detected by the secondary electron detector 4 as described above, and the secondary electron intensity is expressed in synchronization with the scanning. Obtain a secondary electron image.
【００２２】試料観察及び集束イオンビーム加工位置の
決定はＰＥＥＭにより行う。ＰＥＥＭ像を用いた加工位
置の決定には、各倍率においてＰＥＥＭ像と集束イオン
ビームの走査範囲を一致させる必要がある。先ず、加工
とは関係のない場所においてＰＥＥＭ像及びＳＩＭ像を
得、一致する二点の座標から倍率及び像のズレを求め
る。そしてコンピューター（不図示）によりそのズレを
補正するようにＰＥＥＭ使用時での静電レンズ７及び偏
向電極８に電圧補正を加える。尚、試料加工時における
加工部分の観察には加工ビームによるＳＩＭ像を用い
る。The observation of the sample and the determination of the focused ion beam processing position are performed by PEEM. In order to determine the processing position using the PEEM image, it is necessary to match the scanning range of the focused ion beam with the PEEM image at each magnification. First, a PEEM image and a SIM image are obtained at a place irrelevant to the processing, and the magnification and the image deviation are obtained from the coordinates of two coincident points. Then, voltage correction is applied to the electrostatic lens 7 and the deflecting electrode 8 when using PEEM so that the deviation is corrected by a computer (not shown). Note that a SIM image using a processing beam is used for observation of a processing portion during sample processing.
【００２３】本発明では、紫外線を石英ポート１８から
試料１に照射しているが、これに限らず本発明の要旨を
変更しない範囲で紫外線照射方法を変えても差し支えな
く、例えば図３のようにレンズ鏡筒部１１内に穴の空い
た反射ミラー２０を同軸配置し、紫外線照射装置３から
紫外線をその反射ミラー２０で反射させて試料１に照射
する方法が挙げられる。In the present invention, the sample 1 is irradiated with ultraviolet rays from the quartz port 18. However, the present invention is not limited to this, and the method of irradiating ultraviolet rays may be changed without departing from the scope of the present invention. For example, as shown in FIG. There is a method in which a reflecting mirror 20 having a hole is coaxially arranged in the lens barrel 11, and ultraviolet light from the ultraviolet irradiation device 3 is reflected by the reflecting mirror 20 to irradiate the sample 1.
【００２４】また、図４のように試料表面から放出され
る光電子にグリッドによるエネルギーフィルター２１を
二次電子検出器１０の直前に設置し、試料表面の状態に
関する像を得ることも可能となる。As shown in FIG. 4, it is also possible to install an energy filter 21 using a grid immediately before the secondary electron detector 10 on the photoelectrons emitted from the sample surface to obtain an image relating to the state of the sample surface.
【００２５】[0025]
【発明の効果】本発明により、集束イオンビーム加工に
おいて、試料ヘダメージを与えるＳＩＭ観察をすること
無く試料観察が可能となる。そして、光電子顕微鏡と集
束イオンビーム加工装置を同軸配置することでＳＩＭ像
と同様に加工位置の決定ができる。また、同軸配置によ
り試料ステージ回りの自由度を損なうことがない。According to the present invention, in focused ion beam processing, sample observation can be performed without performing SIM observation that damages the sample. Then, by arranging the photoelectron microscope and the focused ion beam processing device coaxially, the processing position can be determined similarly to the SIM image. Further, the coaxial arrangement does not impair the degree of freedom around the sample stage.
【図１】本発明の実施例を説明する集束イオンビーム加
工装置の概略図で、ＰＥＥＭ観察を示す。FIG. 1 is a schematic view of a focused ion beam processing apparatus for explaining an embodiment of the present invention, showing a PEEM observation.
【図２】本発明の実施例を説明する集束イオンビーム加
工装置の概略図で、集束イオンビーム加工とＳＩＭ観察
を示す。FIG. 2 is a schematic view of a focused ion beam processing apparatus illustrating an embodiment of the present invention, showing focused ion beam processing and SIM observation.
【図３】本発明の実施例を説明する他の形態の集束イオ
ンビーム加工装置の概略図である。FIG. 3 is a schematic view of another form of a focused ion beam processing apparatus for explaining an embodiment of the present invention.
【図４】本発明の実施例を説明する他の形態の集束イオ
ンビーム加工装置の概略図である。FIG. 4 is a schematic view of another form of a focused ion beam processing apparatus for explaining an embodiment of the present invention.
１ 試料 ２ 試料ステージ ３ 紫外線照射装置 ４ 二次電子検出器 ５ 静電レンズ ６ 対物絞り ７ 静電レンズ ８ 偏向電極 ９ 静電レンズ １０ 検出器 １１ レンズ鏡筒部 １２ 固定絞り １３ ブランキング電極 １４ 可動絞り １５ コンデンサレンズ １６ 引き出し電極 １７ イオン源 １８ 石英ポート １９ 真空チャンバ ２０ 反射ミラー ２１ エネルギーフィルター REFERENCE SIGNS LIST 1 sample 2 sample stage 3 ultraviolet irradiation device 4 secondary electron detector 5 electrostatic lens 6 objective aperture 7 electrostatic lens 8 deflection electrode 9 electrostatic lens 10 detector 11 lens barrel 12 fixed aperture 13 blanking electrode 14 movable Aperture 15 Condenser lens 16 Leader electrode 17 Ion source 18 Quartz port 19 Vacuum chamber 20 Reflector mirror 21 Energy filter
Claims (8)
イオンビームを集束させ試料表面で走査する手段と、前
記集束イオンビーム照射によって試料表面から放出され
た二次電子を検出する手段と、前記検出された二次電子
の信号強度を前記集束イオンビームの走査と同期して表
示する手段と、且つ紫外線を照射する手段と、前記紫外
線によって試料表面から放出される光電子を結像及び拡
大する手段と、検出器によって光電子像を得るための手
段を有することを特徴とする集束イオンビーム加工装
置。A means for generating an ion beam; a means for focusing the ion beam to scan on a sample surface; a means for detecting secondary electrons emitted from the sample surface by the focused ion beam irradiation; Means for displaying the signal intensity of the secondary electrons in synchronization with the scanning of the focused ion beam, and means for irradiating ultraviolet rays, and means for imaging and enlarging photoelectrons emitted from the sample surface by the ultraviolet rays. And a means for obtaining a photoelectron image by a detector.
光電子像を結像させるレンズ系及び光電子像を得る検出
器を同軸に配置したことを特徴とする請求項１に記載の
集束イオンビーム加工装置。2. The focused ion beam processing apparatus according to claim 1, wherein a lens system that focuses the ion beam, a lens system that focuses the photoelectron image, and a detector that obtains the photoelectron image are coaxially arranged.
に配置されたレンズ系を一部共有化して用いることを特
徴とする請求項２に記載の集束イオンビーム加工装置。3. The focused ion beam processing apparatus according to claim 2, wherein a coaxially disposed lens system used for the focused ion beam and the photoelectrons is partially used.
ｎｅｌ Ｐｌａｔｅ）とＰＳＤ（Ｐｏｓｉｔｉｏｎ Ｓ
ｅｎｓｉｔｉｖｅ Ｄｅｔｅｃｔｏｒ）を組み合わせて
用いることを特徴とする請求項３に記載の集束イオンビ
ーム加工装置。4. An MCP (Micro Chan) is used as a detector.
nel Plate) and PSD (Position S)
The focused ion beam processing apparatus according to claim 3, wherein the focused ion beam processing apparatus is used in combination with an intrinsic detector.
金属によるイオン源と、静電レンズで集束させる手段を
有することを特徴とする請求項１〜４のいずれかに記載
の集束イオンビーム加工装置。5. A focused ion beam processing apparatus according to claim 1, wherein the means for generating an ion beam includes an ion source made of a liquid metal and a means for focusing by an electrostatic lens. .
プを用いたことを特徴とする請求項１〜５のいずれかに
記載の集束イオンビーム加工装置。6. The focused ion beam processing apparatus according to claim 1, wherein a mercury lamp or a deuterium lamp is used as an ultraviolet light source.
走査する手段と紫外線を照射する手段を有し、前記イオ
ンビームの走査により得られる試料の二次電子像と前記
紫外線照射により得られる試料の光電子像を対応させ、
前記光電子像に基づき前記イオンビームによる加工位置
を決定する手段を備えることを特徴とする集束イオンビ
ーム加工装置。7. A method for irradiating and scanning a focused ion beam on a sample surface and a means for irradiating an ultraviolet ray, wherein a secondary electron image of the sample obtained by scanning the ion beam and a sample of the sample obtained by the ultraviolet irradiation are provided. Correspond to the photoelectron image,
A focused ion beam processing apparatus comprising: means for determining a processing position by the ion beam based on the photoelectron image.
する方法において、集束イオンビームの走査により得ら
れる二次電子像と紫外線照射により得られる光電子像が
一致するように予めレンズ系の調整を行った後、レンズ
系の調整値に基づき光電子像から加工位置を決定するこ
とを特徴とする集束イオンビームを用いる試料の加工方
法。8. A method for processing a sample surface with a focused ion beam, wherein a lens system is adjusted in advance so that a secondary electron image obtained by scanning with the focused ion beam and a photoelectron image obtained by irradiating ultraviolet rays coincide with each other. A method of processing a sample using a focused ion beam, wherein a processing position is determined from a photoelectron image based on an adjustment value of a lens system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11171801A JP2001006605A (en) | 1999-06-18 | 1999-06-18 | Focusing ion beam processing device and processing method for specimen using focusing ion beam |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11171801A JP2001006605A (en) | 1999-06-18 | 1999-06-18 | Focusing ion beam processing device and processing method for specimen using focusing ion beam |
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| Publication Number | Publication Date |
|---|---|
| JP2001006605A true JP2001006605A (en) | 2001-01-12 |
Family
ID=15929977
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11171801A Withdrawn JP2001006605A (en) | 1999-06-18 | 1999-06-18 | Focusing ion beam processing device and processing method for specimen using focusing ion beam |
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| Country | Link |
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| JP (1) | JP2001006605A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007103108A (en) * | 2005-10-03 | 2007-04-19 | Sii Nanotechnology Inc | Processing method by focusing ion beam |
| KR100795963B1 (en) | 2005-05-17 | 2008-01-21 | 광운대학교 산학협력단 | Measurement ?-focused ion beam system and method of ion induced secondary electron emission parameter |
| WO2013081195A1 (en) * | 2011-11-28 | 2013-06-06 | 한국기초과학지원연구원 | Anion generating and electron capture dissociation apparatus using cold electrons |
| JP2021002507A (en) * | 2019-06-25 | 2021-01-07 | 株式会社荏原製作所 | Method for evaluating secondary optical system of electron beam inspection device |
| CN112432933A (en) * | 2019-08-26 | 2021-03-02 | 北京大学 | Ultrahigh time-space resolution imaging system and method of multi-excitation light source photoelectron microscope |
-
1999
- 1999-06-18 JP JP11171801A patent/JP2001006605A/en not_active Withdrawn
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100795963B1 (en) | 2005-05-17 | 2008-01-21 | 광운대학교 산학협력단 | Measurement ?-focused ion beam system and method of ion induced secondary electron emission parameter |
| JP2007103108A (en) * | 2005-10-03 | 2007-04-19 | Sii Nanotechnology Inc | Processing method by focusing ion beam |
| US7576340B2 (en) | 2005-10-03 | 2009-08-18 | Sii Nano Technology Inc. | Focused ion beam processing method |
| WO2013081195A1 (en) * | 2011-11-28 | 2013-06-06 | 한국기초과학지원연구원 | Anion generating and electron capture dissociation apparatus using cold electrons |
| US9230791B2 (en) | 2011-11-28 | 2016-01-05 | Korea Basic Science Institute | Anion generating and electron capture dissociation apparatus using cold electrons |
| JP2021002507A (en) * | 2019-06-25 | 2021-01-07 | 株式会社荏原製作所 | Method for evaluating secondary optical system of electron beam inspection device |
| JP7157708B2 (en) | 2019-06-25 | 2022-10-20 | 株式会社荏原製作所 | METHOD FOR EVALUATING SECONDARY OPTICAL SYSTEM OF ELECTRON BEAM INSPECTION SYSTEM |
| CN112432933A (en) * | 2019-08-26 | 2021-03-02 | 北京大学 | Ultrahigh time-space resolution imaging system and method of multi-excitation light source photoelectron microscope |
| CN112432933B (en) * | 2019-08-26 | 2021-11-19 | 北京大学 | Ultrahigh time-space resolution imaging system and method of multi-excitation light source photoelectron microscope |
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