JP2001077058A - 集束イオンビームを用いた加工方法 - Google Patents

集束イオンビームを用いた加工方法

Info

Publication number
JP2001077058A
JP2001077058A JP25491499A JP25491499A JP2001077058A JP 2001077058 A JP2001077058 A JP 2001077058A JP 25491499 A JP25491499 A JP 25491499A JP 25491499 A JP25491499 A JP 25491499A JP 2001077058 A JP2001077058 A JP 2001077058A
Authority
JP
Japan
Prior art keywords
ion beam
focused ion
sample
generated
focused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP25491499A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001077058A5 (fr
Inventor
Tetsuji Nishimura
哲司 西村
Toshiaki Fujii
利昭 藤井
Yasuhiko Sugiyama
安彦 杉山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP25491499A priority Critical patent/JP2001077058A/ja
Priority to PCT/JP2000/005975 priority patent/WO2001018844A1/fr
Priority to TW89118358A priority patent/TW465036B/zh
Publication of JP2001077058A publication Critical patent/JP2001077058A/ja
Publication of JP2001077058A5 publication Critical patent/JP2001077058A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3005—Observing the objects or the point of impact on the object

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
JP25491499A 1999-09-08 1999-09-08 集束イオンビームを用いた加工方法 Withdrawn JP2001077058A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP25491499A JP2001077058A (ja) 1999-09-08 1999-09-08 集束イオンビームを用いた加工方法
PCT/JP2000/005975 WO2001018844A1 (fr) 1999-09-08 2000-09-01 Procede de traitement mettant en oeuvre un faisceau ionique focalise
TW89118358A TW465036B (en) 1999-09-08 2000-09-07 Method of machining using concentrated ion beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25491499A JP2001077058A (ja) 1999-09-08 1999-09-08 集束イオンビームを用いた加工方法

Publications (2)

Publication Number Publication Date
JP2001077058A true JP2001077058A (ja) 2001-03-23
JP2001077058A5 JP2001077058A5 (fr) 2005-10-27

Family

ID=17271618

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25491499A Withdrawn JP2001077058A (ja) 1999-09-08 1999-09-08 集束イオンビームを用いた加工方法

Country Status (3)

Country Link
JP (1) JP2001077058A (fr)
TW (1) TW465036B (fr)
WO (1) WO2001018844A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007513465A (ja) * 2003-10-31 2007-05-24 ロート・ウント・ラウ・アクチェンゲゼルシャフト 表面をイオンビーム加工するための方法及び装置
JP2010520465A (ja) * 2007-03-06 2010-06-10 ライカ ミクロジュステーメ ゲーエムベーハー 電子顕微鏡検鏡用試料の作製法
US20130008779A1 (en) * 2010-02-17 2013-01-10 Oleg Victor Kolosov Method and apparatus for ion beam polishing

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4734158A (en) * 1987-03-16 1988-03-29 Hughes Aircraft Company Molecular beam etching system and method
JPH02288144A (ja) * 1989-04-28 1990-11-28 Mitsubishi Electric Corp 集束イオンビーム照射装置
JPH04272642A (ja) * 1991-02-26 1992-09-29 Shimadzu Corp 集束イオンビーム装置
JPH04373125A (ja) * 1991-06-21 1992-12-25 Hitachi Ltd 集束イオンビーム装置およびそれによる加工方法
JP3353535B2 (ja) * 1995-05-15 2002-12-03 株式会社日立製作所 集束イオンビーム加工装置
JPH10223574A (ja) * 1997-02-12 1998-08-21 Hitachi Ltd 加工観察装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007513465A (ja) * 2003-10-31 2007-05-24 ロート・ウント・ラウ・アクチェンゲゼルシャフト 表面をイオンビーム加工するための方法及び装置
JP4786541B2 (ja) * 2003-10-31 2011-10-05 ロート・ウント・ラウ−マイクロ・システムズ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング 表面をイオンビーム加工するための方法及び装置
JP2010520465A (ja) * 2007-03-06 2010-06-10 ライカ ミクロジュステーメ ゲーエムベーハー 電子顕微鏡検鏡用試料の作製法
US20130008779A1 (en) * 2010-02-17 2013-01-10 Oleg Victor Kolosov Method and apparatus for ion beam polishing
US9082587B2 (en) * 2010-02-17 2015-07-14 Lancaster University Business Enterprises Limited Method and apparatus for ion beam polishing

Also Published As

Publication number Publication date
TW465036B (en) 2001-11-21
WO2001018844A1 (fr) 2001-03-15

Similar Documents

Publication Publication Date Title
EP1053562B1 (fr) Systeme a faisceaux de particules focalises avec une colonne basculee et procedes utilisant ledit systeme
US6322672B1 (en) Method and apparatus for milling copper interconnects in a charged particle beam system
JP3730263B2 (ja) 荷電粒子ビームを用いた自動基板検査の装置及び方法
US7700367B2 (en) Method of making lamina specimen
JP5600371B2 (ja) 荷電粒子ビーム処理のための保護層のスパッタリング・コーティング
US20110163068A1 (en) Multibeam System
US20130180843A1 (en) Directed multi-deflected ion beam milling of a work piece and determining and controlling extent thereof
JPH10223574A (ja) 加工観察装置
US6949756B2 (en) Shaped and low density focused ion beams
US20110240602A1 (en) High-voltage gas cluster ion beam (gcib) processing system
JP2006054074A (ja) 荷電粒子ビームカラム
JP2006252995A (ja) 荷電粒子ビーム装置
US10636615B2 (en) Composite beam apparatus
JP5695818B2 (ja) 断面加工方法及び断面観察試料の製造方法
JP2010055756A (ja) 荷電粒子線の照射方法及び荷電粒子線装置
JP2008123891A (ja) 荷電ビーム装置、及びその鏡体
JP2000500265A (ja) 高分解能透過電子顕微鏡におけるイオン薄肉化方法および装置
JP2004079511A (ja) ビームシステムのビームカラムを傾動する方法とその装置並びにビームシステム
JP4543047B2 (ja) 荷電ビーム装置および欠陥修正方法
KR20210117188A (ko) 입자 빔 장치 및 복합 빔 장치
JPH1145679A (ja) 断面観察装置
JPS63500899A (ja) イオン線装置及びイオン線装置を使用して基体を変更する方法
JP2001077058A (ja) 集束イオンビームを用いた加工方法
JP2007103107A (ja) 荷電粒子ビーム装置及び荷電粒子ビームの照射方法
WO2005091328A1 (fr) Appareil et procede permettant de diriger un gaz vers un specimen

Legal Events

Date Code Title Description
RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20040302

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20040526

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050711

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050711

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080701

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20080807