TW465036B - Method of machining using concentrated ion beam - Google Patents

Method of machining using concentrated ion beam Download PDF

Info

Publication number
TW465036B
TW465036B TW89118358A TW89118358A TW465036B TW 465036 B TW465036 B TW 465036B TW 89118358 A TW89118358 A TW 89118358A TW 89118358 A TW89118358 A TW 89118358A TW 465036 B TW465036 B TW 465036B
Authority
TW
Taiwan
Prior art keywords
ion beam
concentrated ion
sample
concentrated
lens barrel
Prior art date
Application number
TW89118358A
Other languages
English (en)
Chinese (zh)
Inventor
Tetsuji Nishimura
Toshiaki Fujii
Yasuhiko Sugiyama
Original Assignee
Seiko Instr Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instr Inc filed Critical Seiko Instr Inc
Application granted granted Critical
Publication of TW465036B publication Critical patent/TW465036B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3005—Observing the objects or the point of impact on the object

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
TW89118358A 1999-09-08 2000-09-07 Method of machining using concentrated ion beam TW465036B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25491499A JP2001077058A (ja) 1999-09-08 1999-09-08 集束イオンビームを用いた加工方法

Publications (1)

Publication Number Publication Date
TW465036B true TW465036B (en) 2001-11-21

Family

ID=17271618

Family Applications (1)

Application Number Title Priority Date Filing Date
TW89118358A TW465036B (en) 1999-09-08 2000-09-07 Method of machining using concentrated ion beam

Country Status (3)

Country Link
JP (1) JP2001077058A (fr)
TW (1) TW465036B (fr)
WO (1) WO2001018844A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10351059B4 (de) * 2003-10-31 2007-03-01 Roth & Rau Ag Verfahren und Vorrichtung zur Ionenstrahlbearbeitung von Oberflächen
EP2132550B1 (fr) * 2007-03-06 2012-11-07 Leica Mikrosysteme GmbH Procédé de fabrication d'un échantillon pour la microscopie électronique
GB201002645D0 (en) * 2010-02-17 2010-03-31 Univ Lancaster Method and apparatus for ion beam polishing

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4734158A (en) * 1987-03-16 1988-03-29 Hughes Aircraft Company Molecular beam etching system and method
JPH02288144A (ja) * 1989-04-28 1990-11-28 Mitsubishi Electric Corp 集束イオンビーム照射装置
JPH04272642A (ja) * 1991-02-26 1992-09-29 Shimadzu Corp 集束イオンビーム装置
JPH04373125A (ja) * 1991-06-21 1992-12-25 Hitachi Ltd 集束イオンビーム装置およびそれによる加工方法
JP3353535B2 (ja) * 1995-05-15 2002-12-03 株式会社日立製作所 集束イオンビーム加工装置
JPH10223574A (ja) * 1997-02-12 1998-08-21 Hitachi Ltd 加工観察装置

Also Published As

Publication number Publication date
WO2001018844A1 (fr) 2001-03-15
JP2001077058A (ja) 2001-03-23

Similar Documents

Publication Publication Date Title
US7160475B2 (en) Fabrication of three dimensional structures
EP1210723B1 (fr) Faisceaux ioniques focalises modeles et a faible densite
TW418457B (en) Processing/observing instrument
KR910007533B1 (ko) X선 마스크의 결함 수정 방법 및 그 장치
US20040065826A1 (en) System for imaging a cross-section of a substrate
US20040129351A1 (en) Method and system for fabricating three-diemensional microstructure
TWI803572B (zh) 帶電粒子束裝置、試料加工觀察方法
EP1280192B1 (fr) Installation pour former des nanostructures a la surface de plaquettes de semi-conducteur par faisceaux d'ions
JP2000500265A (ja) 高分解能透過電子顕微鏡におけるイオン薄肉化方法および装置
JPS62195662A (ja) マスクリペア方法及び装置
TWI507680B (zh) 帶電粒子束成像技術之電荷釋放方式
TW465036B (en) Method of machining using concentrated ion beam
US7592604B2 (en) Charged particle beam apparatus
US20100006756A1 (en) Charged particle beam apparatus and method for generating charged particle beam image
US4902530A (en) Method of correcting a pattern film
TWI288424B (en) Inspection apparatus and inspection method
US7009177B1 (en) Apparatus and method for tilted particle-beam illumination
JP3051909B2 (ja) パターン膜修正方法とその装置
JP4446826B2 (ja) 電子線投影露光用メンブレンマスクの欠陥修正方法および装置
JP2001006605A (ja) 集束イオンビーム加工装置及び集束イオンビームを用いる試料の加工方法
JP2012241779A (ja) 真空接続装置、荷電粒子ビーム描画装置および排気装置の荷電粒子ビーム描画装置への取付方法
US20240170248A1 (en) Particle beam system
JPH0261066A (ja) パターン形成方法
JP2001077058A5 (fr)
JP2001243904A (ja) 走査形電子顕微鏡

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees