WO2000016397A1 - Dispositif electronique - Google Patents

Dispositif electronique Download PDF

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Publication number
WO2000016397A1
WO2000016397A1 PCT/JP1998/004159 JP9804159W WO0016397A1 WO 2000016397 A1 WO2000016397 A1 WO 2000016397A1 JP 9804159 W JP9804159 W JP 9804159W WO 0016397 A1 WO0016397 A1 WO 0016397A1
Authority
WO
WIPO (PCT)
Prior art keywords
flow path
cooling
semiconductor
downstream
water
Prior art date
Application number
PCT/JP1998/004159
Other languages
English (en)
Japanese (ja)
Inventor
Atsuo Nishihara
Noriyuki Ashiwake
Akio Idei
Takahiro Daikoku
Original Assignee
Hitachi, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd. filed Critical Hitachi, Ltd.
Priority to PCT/JP1998/004159 priority Critical patent/WO2000016397A1/fr
Publication of WO2000016397A1 publication Critical patent/WO2000016397A1/fr

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16—Constructional details or arrangements
    • G06F1/20—Cooling means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2200/00—Indexing scheme relating to G06F1/04 - G06F1/32
    • G06F2200/20—Indexing scheme relating to G06F1/20
    • G06F2200/201—Cooling arrangements using cooling fluid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to electronic equipment, and more particularly to cooling of a semiconductor element mounted inside an electronic equipment.
  • Computers so-called computers, can be roughly divided into three groups. It is a personal computer used by individuals, a workstation used for technical calculations and relatively small database management, and a large general-purpose computer used for managing large databases such as customer data of banks and telephone companies.
  • a method of cooling the semiconductor elements mounted on these computers some personal computers use natural air cooling without using a blower, while other personal computers, workstations and large computers
  • forced air cooling is generally used to cool the heating elements directly with wind from the blower.
  • high-performance large computers use a water-cooling system that uses heat exchange with water for cooling. The present invention was invented based on the result of studying cooling of a large computer by water.
  • Semiconductors are more suitable for maintaining their performance as they are cooled, but when extremely low-temperature cooling water is used, the inside of the computer housing is cooled, and conversely, the semiconductors are bonded to the semiconductor.
  • the cooling water temperature is set at a lower limit of, for example, 25 ° C to suppress the occurrence of dew condensation, since the serious problem of dew formation may occur.
  • a large-scale computer is provided with a plurality of semiconductor elements such as a memory and a control unit in addition to the central processing unit as described above.
  • a means of cooling for example, “Hitachi Review” VOL. 73 No. 2 (1991) 4 Page 1 Page 48 “Hardware technology of the ultra-large processor group“ HITACM-880 ”” Some are described. This conventional cooling structure will be described with reference to FIGS. 1, 2, 3, and 4. FIG.
  • FIG. 1 is a diagram illustrating a cooling device for a large computer.
  • reference numeral 1 denotes a processor housing, and a semiconductor module is mounted inside the housing 1.
  • Reference numeral 2 denotes a cooling device for cooling water for cooling the semiconductor, which cools the water to a certain temperature, and circulates the cooled water to the housing 1 side by a pump.
  • Reference numeral 3 denotes a semiconductor module to which a water pipe from the water cooling device 2 is connected. The semiconductor module 3 is fixed to the processor board 4.
  • Reference numeral 5 denotes a pipe for supplying water to the semiconductor module 3.
  • Reference numeral 6 denotes a casing side pipe connected to the pipe 5.
  • Reference numeral 7 denotes a power supply, and a blower 8 for cooling the power supply 7 is provided below.
  • Reference numeral 9 denotes a floor-side pipe disposed under the floor where the processor 1 housing 1 and the water cooling device 2 are installed.
  • Reference numeral 10 denotes a pump for supplying water to the pipes 5, 6, and 9.
  • 11 is a heat exchanger for cooling the heated water after cooling the semiconductor.
  • Reference numeral 12 denotes a blower for cooling the heat exchanger 11.
  • FIG. 2 is an oblique view of a portion of the processor 1 board 4 shown in FIG. 1, in which a semiconductor module and a semiconductor are extracted.
  • a plurality of semiconductor modules 3 are mounted on a processor board 4.
  • a pipe 5 is attached to each of the semiconductor modules 3.
  • the pipe 5 branches off from the casing-side pipe 6 described in FIG.
  • a plurality of semiconductors 13 are mounted on the substrate 14 inside the semiconductor module 3.
  • a central processing unit is constituted by a set of the plurality of semiconductors 13.
  • 3a is a channel for water circulation. This waterway 3a is top lid 3b
  • the lower lid 3c. 3d is a heat transfer means for thermally bringing the semiconductor 13 into contact with the Shimana 3c.
  • the heat transfer means 3 d is not fixed to the lower lid 3 c so that even if a positional change between the semiconductor 13 and the lower lid 3 c occurs due to a thermal change, the deviation can be absorbed.
  • . 3e is a plurality of fins provided in the waterway 3a.
  • Reference numeral 5 denotes a pipe connection portion attached to the upper lid 3b, which serves as an inlet and an outlet for introducing water into the water channel 3a.
  • FIG. 3 is a diagram illustrating a water channel in a semiconductor module.
  • water flowing in from the pipe connection part 5a flows while meandering in a water channel formed in a meandering shape by the weir 3f.
  • Fins 3e are provided in the waterway between the weirs 3f to promote heat exchange.
  • the water is discharged out of the water channel 3a from the discharge port of the pipe connection portion 5a.
  • the widths Wl, W2, W3, and W4 of the meandering channel 3a formed by the weir 3f are all the same width.
  • the water extruded by the pump 10 passes through the pipe 9 under the floor, flows from the pipe connection part 5 a into the water channel 3 a, cools the semiconductor 13, and then cools the semiconductor 13. It is returned into the pipe 5 again from the discharge port of a.
  • the water returning from the pipe 5 to the casing side pipe 6 passes through the pump 10 through the pipe 9 under the floor, is circulated to the heat exchanger 11 by the pump 10, and is cooled by the blower 12. By repeating this cycle, the semiconductor is cooled.
  • FIG. 4 is a longitudinal sectional view of the semiconductor module 13.
  • reference numeral 14 denotes a substrate on which the semiconductor 13 is mounted.
  • the board 14 is provided with a plurality of connection pins 15 on the side opposite to the side where the semiconductor 13 is mounted, and the connection pins 15 are inserted into the processor board.
  • the water flowing in from the pipe connection part 5a flows through the water channel 3a, and heat exchanges with the fins 3e in the water channel 3a to cool the semiconductor 13.
  • the heat of the semiconductor 13 is transmitted to the fin 3e via the heat conducting member 3d.
  • Japanese Patent Application Laid-Open No. 3-85757 discloses a method of locally increasing the cooling capacity of a semiconductor element located on the downstream side in an electronic device without deteriorating the computer's compatibility.
  • This known document discloses a technique in which a substrate on which a heating element is mounted is installed in a non-parallel manner from upstream to downstream to reduce the cross-sectional area of the coolant flow path toward the downstream side, thereby accelerating the flow of the coolant. I have. Thereby, the flow of the medium in the flow path is increased on the downstream side, and the cooling effect of the heating element mounted on the downstream side is enhanced.
  • An object of the present invention is to provide a semiconductor device comprising a plurality of semiconductors mounted on a substrate, and a housing which is in thermal contact with the semiconductor, and which is formed by circulating a fluid in a flow path which bends inside the housing.
  • it is achieved by changing the volume of the channel from a dog to a small volume from an upstream side to a downstream side.
  • FIG. 1 is a diagram illustrating a conventional cooling device for a large computer.
  • FIG. 2 is a diagram illustrating a conventional semiconductor module cooling structure.
  • FIG. 3 is a diagram illustrating a water circulation path of a conventional semiconductor module cooling device.
  • FIG. 4 is a view illustrating the structure of a conventional semiconductor module cooling device.
  • FIG. 5 is a diagram illustrating a water circulation path of the semiconductor module cooling device of the present invention.
  • FIG. 6 is a view for explaining another embodiment of the present invention.
  • FIG. 7 is a diagram for explaining the relationship between the flow velocity of water, the pressure loss, and the thermal resistance of the cooling device in the cooling device of the present invention.
  • FIG. 8 is a diagram for explaining a procedure for assembling the cooling device of the present invention.
  • FIG. 9 is a view for explaining another embodiment of the present invention.
  • FIG. 10 is a view for explaining another embodiment of the present invention.
  • FIG. 11 is a view for explaining another embodiment of the present invention.
  • FIG. 5 is a diagram illustrating a water channel of the semiconductor module.
  • the channel 3a is partitioned by a weir 3f, and the widths of the upstream, middle, and lower channels of the channel are Wl, W2, and W3, respectively.
  • the width of the channel 3a has a relationship of Wl> W2> W3 so that the volume of the channel becomes smaller as it proceeds downstream.
  • the semiconductor 13 shown by a dotted line in the channel 3a is arranged in order in the traveling direction of water.
  • 3 e are fins provided in parallel with the traveling direction of water.
  • the overall shape of the waterway 3a is substantially S-shaped.
  • Reference numeral 16 denotes an upstream waterway, and water flowing from the pipe connection part 5a starts cooling from the upstream waterway 16 as shown by an arrow.
  • Reference numeral 17 denotes a first bent portion, and the water that has passed through the upstream water channel 16 is changed in its course by the bent portion 17 to flow to the intermediate water channel 18.
  • the water that has cooled the semiconductor 13 in the intermediate channel 18 is deflected by the second bent portion 19, flows to the downstream channel 20, and cools the semiconductor located on the downstream side. After that, it flows out of the water channel from the pipe connection 5a.
  • the cooling water flows in the order of the upstream channel 16, the intermediate channel 18, and the downstream channel 20, but the flow rate of the water is constant, but as the channel progresses downstream, Since the volume of the water channel has become smaller, the flow velocity of the water increases in the downstream direction in inverse proportion to the change in the volume, and at the same time, the cooling water flows downstream while absorbing the heat released from the semiconductor.
  • the water temperature rises downstream. That is, the flow velocity is low and the ripening rate is low in the upstream water channel 16, and the water temperature is low instead.
  • the water flow increases in the downstream flow channel 20 instead of increasing the flow velocity and promoting heat transfer.
  • the cooling capacity of the upstream, middle, and downstream channels becomes almost equal by setting the cooling channel width so that the effects of the two just cancel each other. At this time, cooling can be performed without wasting pressure loss by supplying a sufficient flow of cooling water to cool the semiconductor mounted on the substrate.
  • FIG. 6 is a partial cross-sectional view of the semiconductor module shown in FIG.
  • the cooling water flowing from the pipe connection part 5a flows to the fin 3e side attached to the lower lid 3c as shown by the arrow, and passes through the gap between the fins 3e. Cooling water proceeds further downstream Then, the semiconductor is cooled through the gap between the fins 3e on the downstream side. The cooling water that has passed through such a path is discharged from the pipe connection part 5a.
  • FIG. 7 shows the relationship between the flow rate of the cooling water, the thermal resistance, and the pressure loss in this embodiment.
  • the flow velocity is inversely proportional to the cross-sectional area of the flow path.Therefore, the ratio of the flow velocity in the upstream canal to the middle canal and the downstream canal is 0.75: 1: 1.25. Become.
  • the heat transfer coefficient is considered to be proportional to the 0.8th power of the flow velocity, so the thermal resistance of the cooling body is marked in Fig. 7 (1).
  • the upstream channel is the largest, the downstream channel is small, and the intermediate channel has an intermediate value.
  • the width of each channel becomes 1.044 with reference to the intermediate water channel of the present embodiment. Since the heat transfer coefficients of the three channels are equal, in order to achieve the same cooling capacity as the structure of the present embodiment, the thermal resistance in the downstream channel where the temperature of the water rises most is the same as that of the present embodiment. In the same way, the cooling water must flow at the flow velocity shown by the seal in Fig. 7 (1). The flow rate at this time is 1.31 based on the case of the present embodiment.
  • the pressure loss of each channel is equal to the value of the mark as shown in Fig. 7 (2). Value.
  • the upstream, middle, and downstream values are as indicated by the triangles in Fig. 7 (2), respectively, and the total pressure loss is like the sum of the signs. It can be seen that the pressure loss is small compared to the case of the equal width flow path.
  • FIG. 7 (1) shows an example of the temperature rise of the refrigerant in the module per heat generation of the semiconductor, which is shown as ⁇ ⁇ / q.
  • the semiconductor located at the most downstream comes into contact with the refrigerant having a temperature higher by ⁇ than the semiconductor located at the most upstream.
  • the cooling power for each semiconductor on the substrate is equal
  • the element at the most upstream is cooled to a temperature lower by ⁇ than the element at the most downstream.
  • the target thermal resistance of the cooling capacity differs by ⁇ T / q between the most upstream semiconductor and the most downstream semiconductor.
  • the target thermal resistance of the most upstream element is R1
  • the target thermal resistance of the most downstream element is R4. Therefore, as shown in Fig.
  • the cooling capacity can be adjusted so that the thermal resistance of each of the upstream, center, and downstream channels is R2, R3, and R4, respectively. If this is the case, it is possible to compensate for the amount of increase in the temperature of the refrigerant, which is likely to be due to the difference in the cooling capacity of each channel. At this time, the temperature of the semiconductor located on the upstream side in each channel is low, and the temperature of the semiconductor located on the downstream side is high, and the temperature difference is ⁇ TZ 3.
  • ATZN Q / NVCp
  • FIG. 8 shows an assembling procedure of the cooling device of the present embodiment.
  • a waterway 3a is configured by combining a lower lid 3c and an upper lid 3d integrally provided with cooling fins 3e.
  • the joint between the cooling fin 3 e and the upper lid 3 d needs to be welded or bolted via an O-ring to seal so that cooling water does not leak from the gap between the lower lid 3 c and the upper lid 3 d .
  • the cooling fins 3e are simply provided at equal intervals in the water channel 3a.
  • the upper lid 3d is provided with a weir 3f that forms a flow path.When the lower lid 3c and the upper lid 3d are combined, the weir 3f contacts the front edge and the rear edge of the cooling fin 3e without gap.
  • each flow path can be divided.
  • the flow path widths Wl, W2, and W3 described above can be set to a desired ratio.
  • a seal may be provided between the flow paths to prevent the cooling water from leaking between the flow paths.
  • the top of the cooling fin 3e located in the middle of each flow path is welded to the inner surface of the upper lid 3d, or a 0 ring is inserted between the top of the fin 3e and the inner surface of the upper lid 3d and fastened. There is.
  • FIG. 1 a second embodiment of the present invention is shown in FIG.
  • the cross-sectional areas of the upstream water channel 16, the central water channel 18, and the downstream water channel 20 are the same, but the pitch of the cooling fins 3 e becomes narrower toward the downstream.
  • the pressure loss to the flow also increases as the pitch becomes smaller. Therefore, in the second embodiment as well, in the upstream flow path 16, the fins are coarse and the cooling capacity is low, but the water temperature is low instead of the cooling capacity. In the downstream flow path 20, the fins 3 e are fine and the cooling capacity is high t. The water temperature rises. Again, by designing the two effects to cancel each other, cooling can be performed without wasting pressure loss. Further, the operation of the processor can be stabilized by reducing the temperature difference between the semiconductors on the substrate.
  • FIG. 10 is a longitudinal sectional view of the cooling device cut in a direction perpendicular to the flow of the cooling water.
  • the cross-sectional areas of the upstream waterway 16, intermediate waterway 18 and downstream waterway 20 are equal, but the width of the flow path gradually decreases toward the downstream, while the height of the flow path increases. And the height of the fins is gradually increased toward the downstream side.
  • the flow velocity in each flow path is equal, and the heat transfer coefficient on the fin surface is almost the same.However, the fin surface area per the bottom area of the cooling body increases toward the downstream side, so that the heat resistance increases as the flow path on the downstream side increases. Becomes smaller.
  • the temperature rise of the cooling water can be compensated, and the load of heat generated by the semiconductor can be concentrated in the upstream flow path having a large cooling capacity.
  • the pressure loss in the upstream and downstream water channels is almost equal to that in the central channel, and the total pressure loss is almost the same as in the first embodiment.
  • the effect of reducing the pressure loss as compared with the width channel structure is the same.
  • FIG. 11 is a vertical sectional view of a substrate, a semiconductor, and a cooling device cut in a direction perpendicular to a flow of cooling water.
  • FIG. 11 shows a configuration in which seal portions for preventing leakage of cooling water are provided between the water channels 16, 18, and 20.
  • seal portions for preventing leakage of cooling water are provided between the water channels 16, 18, and 20.
  • the upstream waterway 20 is provided on the two rows of semiconductors on the right side shown in FIG. 11, and the middle waterway 18 and the downstream waterway 16 are each provided with one row of semiconductors. It is provided above.
  • the weir 3 f which is the boundary between the water channels 16, 18, and 20, is located in the gap between the semiconductors.
  • the intermediate waterway 18 in order to make a difference between the capacity of the intermediate waterway 18 and the waterway of the downstream waterway 16, the intermediate waterway 18 is raised by raising the weir 3 f and the downstream waterway 1 The capacity is larger than the capacity of 6.
  • the gap between the weir 3f and the upper lid 3d is sealed by an O-ring 21 to prevent the cooling water from leaking downstream in the middle of the flow path.
  • the semiconductor side facing the weir 3 f has poor heat transfer, so that the seal portion is provided between the rows of semiconductors. It is desirable to install. As described in the first embodiment, it is desirable to gradually reduce the volumes of the upstream waterway 16, the intermediate waterway 18, and the downstream waterway 20, but the intermediate waterway 18 and the downstream waterway Since the width is equal to the width of one row of semiconductors, in the fourth embodiment shown in FIG. 11, the volume of the intermediate channel 18 is intermediate with respect to the volume of the upstream channel and the downstream channel. The volume is expanded by raising the weir 3 f.
  • the pressure loss of the cooling water can be suppressed to a small value while the semiconductor package is efficiently cooled with a large heat value L. Also, since the cooling capacity of the upstream water channel and the downstream water channel can be equalized inside the cooling device, the temperature difference between the semiconductor mounted on the upstream side of the substrate and the semiconductor mounted on the downstream side is reduced. it can. Since the temperature of the semiconductor affects the signal delay, the operation of the computer can be stabilized by reducing the temperature difference between the semiconductors.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • General Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

On régule la distribution de manière à concentrer la charge de refroidissement du côté amont (16) du passage pour eau tandis que l'on réduit la résistance thermique dans un passage pour eau de refroidissement du côté aval (20) par rapport au côté amont (16); on diminue successivement la capacité du passage entre le passage (16) pour fluide caloporteur amont et le passage (20) aval en réduisant la perte de pression dans la totalité de l'appareil de refroidissement tout en refroidissant tous les éléments (13) semi-conducteurs à une température suffisamment basse par utilisation d'un corps de refroidissement planaire ayant une configuration dans laquelle une pluralité de passages parallèles pour fluide caloporteur sont connectés les uns aux autres au moyen d'un passage courbe; et l'on connecte le passage (16) amont à un plus grand nombre d'éléments (13) semi-conducteurs que le passage (20) aval tout en faisant en sorte que le débit du fluide caloporteur dans le passage (20) aval soit plus important que dans le passage (16) amont.
PCT/JP1998/004159 1998-09-16 1998-09-16 Dispositif electronique WO2000016397A1 (fr)

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Application Number Priority Date Filing Date Title
PCT/JP1998/004159 WO2000016397A1 (fr) 1998-09-16 1998-09-16 Dispositif electronique

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Application Number Priority Date Filing Date Title
PCT/JP1998/004159 WO2000016397A1 (fr) 1998-09-16 1998-09-16 Dispositif electronique

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WO2000016397A1 true WO2000016397A1 (fr) 2000-03-23

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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002098454A (ja) * 2000-07-21 2002-04-05 Mitsubishi Materials Corp 液冷ヒートシンク及びその製造方法
JP2002368169A (ja) * 2001-06-08 2002-12-20 Honda Motor Co Ltd ヒートシンクの製造方法
WO2006115073A1 (fr) * 2005-04-21 2006-11-02 Nippon Light Metal Company, Ltd. Chemise a refroidissement liquide
JP2008171840A (ja) * 2007-01-05 2008-07-24 T Rad Co Ltd 液冷ヒートシンクおよびその設計方法
JP2009260371A (ja) * 2009-07-24 2009-11-05 Sanyo Denki Co Ltd 電子部品冷却装置
WO2013039026A1 (fr) * 2011-09-15 2013-03-21 住友重機械工業株式会社 Machine de travail
JP2013098530A (ja) * 2011-11-04 2013-05-20 Samsung Electro-Mechanics Co Ltd ヒートシンク
WO2013118809A1 (fr) * 2012-02-09 2013-08-15 日産自動車株式会社 Dispositif de refroidissement de semi-conducteurs
JP2013232614A (ja) * 2012-04-06 2013-11-14 Toyota Industries Corp 半導体装置
JP2015169091A (ja) * 2014-03-05 2015-09-28 三菱自動車工業株式会社 エンジンのピストン冷却構造
WO2018055923A1 (fr) * 2016-09-23 2018-03-29 住友精密工業株式会社 Dispositif de refroidissement
JPWO2018055668A1 (ja) * 2016-09-20 2018-12-27 三菱電機株式会社 電力変換装置
EP4092728A1 (fr) * 2021-05-20 2022-11-23 Shenzhen Envicool Technology Co., Ltd Plaque à refroidissement liquide et dispositif informatique électronique

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0563119B2 (fr) * 1986-11-28 1993-09-09 Ibm
JPH079865A (ja) * 1993-06-28 1995-01-13 Showa Alum Corp 電気自動車用放熱器

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0563119B2 (fr) * 1986-11-28 1993-09-09 Ibm
JPH079865A (ja) * 1993-06-28 1995-01-13 Showa Alum Corp 電気自動車用放熱器

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002098454A (ja) * 2000-07-21 2002-04-05 Mitsubishi Materials Corp 液冷ヒートシンク及びその製造方法
JP2002368169A (ja) * 2001-06-08 2002-12-20 Honda Motor Co Ltd ヒートシンクの製造方法
JP4503202B2 (ja) * 2001-06-08 2010-07-14 本田技研工業株式会社 ヒートシンクの製造方法
WO2006115073A1 (fr) * 2005-04-21 2006-11-02 Nippon Light Metal Company, Ltd. Chemise a refroidissement liquide
JP2008171840A (ja) * 2007-01-05 2008-07-24 T Rad Co Ltd 液冷ヒートシンクおよびその設計方法
JP2009260371A (ja) * 2009-07-24 2009-11-05 Sanyo Denki Co Ltd 電子部品冷却装置
WO2013039026A1 (fr) * 2011-09-15 2013-03-21 住友重機械工業株式会社 Machine de travail
JP2013098530A (ja) * 2011-11-04 2013-05-20 Samsung Electro-Mechanics Co Ltd ヒートシンク
WO2013118809A1 (fr) * 2012-02-09 2013-08-15 日産自動車株式会社 Dispositif de refroidissement de semi-conducteurs
JP2013232614A (ja) * 2012-04-06 2013-11-14 Toyota Industries Corp 半導体装置
JP2015169091A (ja) * 2014-03-05 2015-09-28 三菱自動車工業株式会社 エンジンのピストン冷却構造
JPWO2018055668A1 (ja) * 2016-09-20 2018-12-27 三菱電機株式会社 電力変換装置
US10888035B2 (en) 2016-09-20 2021-01-05 Mitsubishi Electric Corporation Power conversion device
WO2018055923A1 (fr) * 2016-09-23 2018-03-29 住友精密工業株式会社 Dispositif de refroidissement
CN109691251A (zh) * 2016-09-23 2019-04-26 住友精密工业株式会社 冷却装置
US11284534B2 (en) 2016-09-23 2022-03-22 Sumitomo Precision Products Co., Ltd. Cooling device
EP4092728A1 (fr) * 2021-05-20 2022-11-23 Shenzhen Envicool Technology Co., Ltd Plaque à refroidissement liquide et dispositif informatique électronique

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