WO1999060599A1 - Structure d'electrodes amelioree pour dispositifs organiques a diodes electroluminescentes - Google Patents

Structure d'electrodes amelioree pour dispositifs organiques a diodes electroluminescentes Download PDF

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Publication number
WO1999060599A1
WO1999060599A1 PCT/US1999/003900 US9903900W WO9960599A1 WO 1999060599 A1 WO1999060599 A1 WO 1999060599A1 US 9903900 W US9903900 W US 9903900W WO 9960599 A1 WO9960599 A1 WO 9960599A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
light emitting
work function
emitting diode
organic light
Prior art date
Application number
PCT/US1999/003900
Other languages
English (en)
Inventor
Gary W. Jones
Webster E. Howard
Original Assignee
Fed Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fed Corporation filed Critical Fed Corporation
Priority to JP2000550128A priority Critical patent/JP2002516459A/ja
Priority to KR1020007012865A priority patent/KR20010071276A/ko
Priority to EP99909560A priority patent/EP1088320A1/fr
Publication of WO1999060599A1 publication Critical patent/WO1999060599A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode

Definitions

  • the present invention relates to electrode structures for an organic light emitting diode (OLED) device.
  • the present invention relates to an improved anode structure for an OLED device.
  • Fig. 1 discloses a known OLED device 10.
  • the OLED device 10 includes a glass substrate 11.
  • a transparent hole-injecting anode or electrode 12 formed of indium-tin oxide (ITO) is located on the glass substrate 11.
  • An organic stack 13 is located on the anode 12.
  • the anode 12 forms the first or bottom layer of the stack 13.
  • a metal cathode 14 is located on top of the organic stack 13. In the device 10, light is emitted in a downward direction through the electrode 12 and the glass substrate 11.
  • ITO indium-tin oxide
  • OLED require two electrodes, an anode 12 and a cathode 14, at least one of which must be transparent to allow light to escape.
  • the anode 12, which must supply holes to the emitting region, is usually formed from a material with high work function, since this will lead to a low energy for hole injection.
  • the cathode 14, which must supply electrons to the emitting region, is usually formed from a material with low work function, which will facilitate electron injection.
  • ITO Indium tin oxide
  • ITO injection efficiency of ITO, and consequently the luminescent efficiency of the OLED, is enhanced by pretreating the ITO with an oxygen plasma, which ensures that there is an excess of oxygen at the interface with the organic stack 13.
  • the excess of oxygen appears to contribute to the instability of such OLEDs because the oxygen can migrate and react with the organic materials.
  • ITO has also been used in conjunction with thin metal interlayers to form cathode contacts, where the thin metal is of a low work function material to provide electron injection.
  • the present invention is directed to an improved organic light emitting diode device.
  • the organic light emitting diode device includes a first electrode, a second electrode, and an
  • stack may include hole transport materials located on one side of the stack and electron
  • the improvement includes a thin
  • the organic light emitting diode device according to the present invention has
  • the thin layer of high work function material may be formed from a material selected
  • the thin layer of high work function is selected from the group consisting of Mo and alloys of Mo.
  • the thin layer of high work function is selected from the group consisting of Mo and alloys of Mo.
  • material may be formed from a material selected from the group consisting of W and alloys
  • the thin layer of high work function material may be formed from a
  • thin layer of the high work function material may have a thickness of less than 100 A.
  • the first electrode may be a transparent electrode and the second electrode may be
  • the second electrode may be formed from a low work function material.
  • the present invention is also directed to an improved electrode structure for an
  • the electrode may comprise an electrode layer, and a thin
  • the thin layer of a high work function material located adjacent the electrode layer.
  • high work function material may be formed from a material selected from the group
  • the thin layer of high work function material may be any material consisting of Mo and alloys of Mo.
  • the thin layer of high work function material may be any material consisting of Mo and alloys of Mo.
  • layer of high work function material may be formed from a material selected from the group
  • the electrode structure may be an
  • the anode may be a transparent anode.
  • the thin layer of the high work function material has a thickness of less than 100 A.
  • the electrode structure may be a
  • the present invention is also directed to an organic light emitting diode device having
  • the device includes an anode layer formed from a high work function
  • the anode layer may be formed from a material selected from the group consisting of:
  • the anode layer may be formed from a material selected
  • the anode layer may be formed from a
  • Fig. 1 is a schematic view of a known organic light emitting diode device
  • Fig. 2 is a schematic view of an organic light emitting diode device in accordance
  • Fig.2 discloses an organic light emitting diode device 20 according to an embodiment
  • the OLED device 20 includes a substrate 21.
  • a first electrode 22 is provided on the substrate 21.
  • An intermediate layer 24 is located on the organic stack 23.
  • second electrode 25 is located on top of the intermediate layer 24.
  • the second electrode 25 is an anode and is formed from ITO. It, however, is
  • IZO IZO
  • the intermediate layer 24 is provided
  • the layer 24 reduces oxygen migration from the second electrode 25 and
  • the intermediate layer 24 is preferably a thin layer of high work function material.
  • the layer 24 is preferably formed from Mo or alloys of Mo.
  • the present invention however,
  • These materials include, but are not limited to W, Nb, Zr, Co, Zn, Tc, Hf, Ta, Cr,
  • Oxides and nitrides of these materials may also be used to improve
  • the second electrode 25 formed from ITO is used only for its
  • the intermediate layer 24 must be sufficiently thin (e.g. a thickness of than 100 A) to permit light to escape through the second electrode and for
  • Oxides and nitrides are often insulating so the thickness must be controlled so
  • the first electrode 22 may then be opaque.
  • the second electrode 25 is not transparent. Accordingly, the
  • first electrode 21 which functions as a cathode, must be transparent or semitransparent to

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un dispositif (20) organique à diodes électroluminescentes qui comprend une première électrode (25), une seconde électrode (22) et un empilement organique (23) intercalé entre la première électrode (25) et la seconde électrode (22). Cet empilement organique (23) peut comprendre des matériaux de transport de trous placés sur un côté de l'empilement et des matériaux de transport de trous placés sur l'autre côté de l'empilement. L'amélioration est caractérisée par une fine couche (24) de matériau hautement fonctionnel intercalé entre la première électrode (25) et l'empilement organique (23). La stabilité du dispositif organique à diodes électroluminescentes (20) s'en trouve améliorée.
PCT/US1999/003900 1998-05-18 1999-02-24 Structure d'electrodes amelioree pour dispositifs organiques a diodes electroluminescentes WO1999060599A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000550128A JP2002516459A (ja) 1998-05-18 1999-02-24 有機発光ダイオード素子のための改良された電極構造体
KR1020007012865A KR20010071276A (ko) 1998-05-18 1999-02-24 유기 발광 다이오드용의 개선된 전극 구조
EP99909560A EP1088320A1 (fr) 1998-05-18 1999-02-24 Structure d'electrodes amelioree pour dispositifs organiques a diodes electroluminescentes

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US8591098P 1998-05-18 1998-05-18
US60/085,910 1998-05-18

Publications (1)

Publication Number Publication Date
WO1999060599A1 true WO1999060599A1 (fr) 1999-11-25

Family

ID=22194790

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1999/003900 WO1999060599A1 (fr) 1998-05-18 1999-02-24 Structure d'electrodes amelioree pour dispositifs organiques a diodes electroluminescentes

Country Status (5)

Country Link
EP (1) EP1088320A1 (fr)
JP (1) JP2002516459A (fr)
KR (1) KR20010071276A (fr)
CN (1) CN1321325A (fr)
WO (1) WO1999060599A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1134817A2 (fr) 2000-03-15 2001-09-19 Sony Corporation Dispositif émetteur de lumière et son usage

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108598868B (zh) * 2018-05-22 2019-12-06 西北核技术研究所 一种用于气体火花开关的电极结构及设计方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5714838A (en) * 1996-09-20 1998-02-03 International Business Machines Corporation Optically transparent diffusion barrier and top electrode in organic light emitting diode structures
US5820996A (en) * 1996-01-31 1998-10-13 Sharp Kabushiki Kaisha Electroluminescence device and method of manufacturing same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5820996A (en) * 1996-01-31 1998-10-13 Sharp Kabushiki Kaisha Electroluminescence device and method of manufacturing same
US5714838A (en) * 1996-09-20 1998-02-03 International Business Machines Corporation Optically transparent diffusion barrier and top electrode in organic light emitting diode structures

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1134817A2 (fr) 2000-03-15 2001-09-19 Sony Corporation Dispositif émetteur de lumière et son usage

Also Published As

Publication number Publication date
CN1321325A (zh) 2001-11-07
JP2002516459A (ja) 2002-06-04
KR20010071276A (ko) 2001-07-28
EP1088320A1 (fr) 2001-04-04

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