WO1999038198A1 - Dispositif et procede pour le traitement de substrats - Google Patents

Dispositif et procede pour le traitement de substrats Download PDF

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Publication number
WO1999038198A1
WO1999038198A1 PCT/EP1998/008469 EP9808469W WO9938198A1 WO 1999038198 A1 WO1999038198 A1 WO 1999038198A1 EP 9808469 W EP9808469 W EP 9808469W WO 9938198 A1 WO9938198 A1 WO 9938198A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrates
treatment fluid
dimensions
lifting
wafers
Prior art date
Application number
PCT/EP1998/008469
Other languages
German (de)
English (en)
Inventor
Michael Storz
Lutz Rebstock
Aurelia Fingerholz
Original Assignee
Steag Microtech Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Steag Microtech Gmbh filed Critical Steag Microtech Gmbh
Priority to EP98966678A priority Critical patent/EP1050069A1/fr
Priority to JP2000528999A priority patent/JP2002502111A/ja
Priority to KR1020007008012A priority patent/KR20010024876A/ko
Publication of WO1999038198A1 publication Critical patent/WO1999038198A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning

Definitions

  • the present invention relates to an apparatus and to a method for treating substrates in a basin containing a treatment fluid, with a lowering and lifting device for the substrates.
  • devices for wet treatment of substrates in a container containing a treatment fluid are described, in which the substrates can be inserted into the container together with a substrate carrier are.
  • the substrates e.g. B. semiconductor wafers
  • the substrates are brought into the container containing the treatment fluid via a lowering and lifting device and then treated with the treatment fluid.
  • the semiconductor wafers are moved out of the treatment fluid by means of a knife-like device and dried, for example according to the Marangoni method known from EP-B-0 385 536, in order subsequently to be received in a hood located above the container.
  • the basins are each for the treatment of substrates with certain dimensions, such as. B. semiconductor wafers with diameters of 65 mm, 84 mm, 95 mm, 130 mm or 200 mm.
  • the lowering and raising of the substrates is always constant and the substrates are always lowered for treatment to a specified point near the bottom of the container.
  • this is also possible, wherein of course only substrates can be treated in a device whose dimensions are smaller or equal to the dimensions of the substrates for which the device is designed.
  • semiconductor wafers with smaller diameters as well as semiconductor wafers with larger diameters would be lowered into the container and lifted out of it at a constant speed, specifically from the previously specified position. The lowering as well as the lifting takes place in a certain time regardless of the dimensions of the substrate carrier.
  • JP 10-12587 A shows a steam drying process for semiconductor wafers, in which the semiconductor wafer is moved out of a saturated vapor layer of isopropyl alcohol (IPA) at a low speed.
  • the slow movement of the wafers out of the IPA layer is intended to prevent droplets from forming on the wafer surface.
  • a slow movement of wafers out of a treatment fluid is also known from US Pat. No. 4,722,752 and EP 0 310 922 A2, in which wafers are rinsed in a water bath and dried by slowly lifting the wafers out of the water bath.
  • the present invention is therefore based on the object of providing a simple and efficient device and a method for treating substrates with different dimensions in a basin containing a treatment fluid, in which the times for introducing the substrates into the basin and for lifting the substrates out be optimized from the pool.
  • the invention solves this problem in that the lifting speed of the lowering and lifting device can be changed depending on the dimensions of the substrates. This has the advantage that substrates with different dimensions can be lowered and raised in the basin at different speeds according to the respective requirements. In particular, the lifting times for substrates with smaller dimensions can be optimized.
  • the substrates are advantageously raised at a higher speed than when the substrates are subsequently moved out of the treatment fluid. While the substrates are covered by the treatment fluid, the substrates can be raised as quickly as desired without this having disadvantages with regard to the treatment and, in particular, drying of the substrates, whereas when the substrates are subsequently moved out of the treatment fluid, it is important that they are also a certain, relatively slow and constant speed are lifted out of the treatment fluid in order to achieve a uniform and complete drying of the substrates.
  • the object of the invention is further achieved in that the lifting height of the lowering and lifting device can be changed depending on the dimensions of the substrates. This has the advantage that substrates with different dimensions can be lowered to different depths into the basin containing the treatment fluid.
  • the substrates are only lowered into the treatment fluid until they are completely removed from the
  • Treatment fluid are covered. This enables a complete treatment of the substrates and especially at Substrates with smaller dimensions have a smaller stroke and thus save time when inserting and removing the substrates.
  • the dimensions of the substrates are sensed with a sensor in order in particular to be able to carry out the necessary settings and controls with regard to the lifting speed and / or lifting height automatically.
  • the substrates are received by at least one hood located above the basin, wherein different hoods are advantageously provided for substrates with different dimensions.
  • the provision of different hoods for substrates with different dimensions results in a simple possibility of receiving the substrates and transporting them to or from the basin.
  • hoods are advantageously marked with respect to their use for substrates with different dimensions, so that the dimensions of the substrates can be determined on the basis of the marking on the hood without the substrates themselves having to be sensed.
  • the marking is advantageously a bar code which enables automatic recognition.
  • the dimensions of the substrates are automatically determined and the lifting speed or lifting height is automatically set in order to ensure complete automation of the device and thereby the saving of operating personnel and to avoid incorrect operation.
  • the object on which the invention is based is also achieved by a method in which the lifting speed and / or lifting height is changed as a function of the dimensions of the substrates.
  • the device 1 has a basin 3 with a semicircular base 5 and adjoining side walls 6 and 7. At the bottom 5, an inlet and / or outlet 9 is formed, via which a treatment fluid 10 can be supplied or removed.
  • a lifting or lowering device 20 for a substrate carrier 30 and a knife-like element 25 for lifting the wafers which is simply referred to below as a knife 25.
  • Such a lifting and lowering device is described, for example, in DE-A-197 37 802, which did not prepublish and goes back to the same applicant. In order to avoid repetitions, the content of DE-A-197 37 802 is made the subject of this application.
  • a plurality of wafers 32 (only one of which can be seen in the figure) are received in succession in a substrate carrier 30 in the viewing direction.
  • the substrate carrier 30 is carried by the lifting and lowering device 20 and is moved up and down by this in the basin.
  • the Knife 25 is in contact with the lowest point of the wafers 32 accommodated in the substrate carrier 30 and serves, in the manner described in DE-A-197 37 802, the wafers 32 out of the substrate carrier 30 and into a hood 35 described below to move in.
  • the basin 3 there is the hood 35 with lateral guides 36 in its interior for receiving the wafers 32. How the wafers are accommodated in the hood 35 is shown in FIG.
  • a feed 37 for IPA, a gas or a gas mixture which is provided for drying the wafers 32 in accordance with the Marangoni process known from EP-B-0 385 536 mentioned above.
  • the hood 35 shown in the figure has internal dimensions that are suitable for holding wafers 32 with certain dimensions. To accommodate wafers 32 with different dimensions, different hoods, not shown, are provided, each of which is designed such that they fit on the basin 3.
  • a bar code 40 is provided on the outside of the hood 35, which serves to identify the internal dimensions of the hood 35 and thus indirectly to identify the dimensions of the wafers that can be accommodated therein and thus the wafer itself.
  • a control device 45 serves to control the lifting and lowering device 20 and is connected to it via a line 46. Furthermore, a bar code reader 48 is provided for reading the bar code 40 located on the hood 35.
  • the bar code reader 48 is connected via a line 50 to the control device 45 to give it the hood type and thus indirectly communicating the dimensions of the wafers 32.
  • the control device 45 then controls the lifting and lowering device 20 on the basis of this information.
  • wafers 32 with different dimensions are transported to and from the basin 3 with different hoods 35. While the respective hood 35 with wafers of a certain dimension or a certain diameter is above the basin 3, the bar code reader 48 is activated in order to
  • Read bar code and forward the information regarding the dimensions of the substrates to the control device 45 via the line 50.
  • the control device controls the lifting and lowering device 20 in order to lower the wafers 32 into the basin 3.
  • the basin 3 is usually filled with treatment fluid 10.
  • the wafers 32 are only lowered into the treatment fluid 10 until they are completely covered by the treatment fluid 10. This means that in the case of wafers 32 with a small diameter, the lifting and lowering device 20 is not lowered as much as with wafers 32 with a larger diameter. This results in a time saving when introducing the wafers 32 into the basin 3.
  • the treatment process is started, for example by introducing pressure treatment fluid 10 into the basin 3 via nozzles (not shown) in order to to rinse the wafers 32.
  • the raisable raises .. and lowering device 20 After treatment, the raisable raises .. and lowering device 20, the wafer 32 from the tank 3 out, the move-out of the wafer 32 from the treatment fluid 10 takes place slowly and continuously, while a gas or gas mixture is supplied via the hood 35 in order to dry the wafers according to the Marangoni method. Since the lifting and lowering device 20 has only lowered the wafers 32 until they are completely covered by the treatment fluid, the wafers 32 are lifted continuously and evenly from the beginning, since the wafers 32 already shortly after the start of the lifting emerge from the treatment fluid 10 with its upper edge, ie penetrate the fluid surface. Since wafers 32 with a smaller diameter are not lowered as much as wafers with larger diameters, time is also saved when the wafers 32 are lifted out of the basin 3, so that the treatment time is reduced and productivity is increased.
  • all wafers, regardless of their dimensions, are lowered to a lowest fixed point in the basin 3.
  • This procedure has advantages in that the aforementioned, not shown, nozzles, with which the treatment liquid is introduced, are set in such a way that they produce an optimal effect when the lifting and lowering device 20 is in a certain position.
  • the lifting and lowering device 20 is controlled via the control device 45, which is supplied with information regarding the dimensions of the wafers via the bar code reader 48.
  • the invention was previously explained on the basis of a preferred exemplary embodiment. However, numerous modifications and refinements are possible for the person skilled in the art without thereby departing from the inventive idea.
  • the dimensions of the wafers 32 can be determined directly by e.g. sensor located in basin 3 can be sensed instead of being derived from bar code 40 on hood 35. Markings other than the exemplary bar code 40 on the hood 35 can also be used to identify the dimensions of the wafers accommodated therein.
  • Other types of hoods e.g. those that hold the wafers together with a substrate carrier are used.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Weting (AREA)

Abstract

L'invention concerne un dispositif et un procédé pour le traitement de substrats dans un réservoir contenant un fluide de traitement et comportant un système d'abaissement et de soulèvement des substrats. On optimise les temps d'introduction et d'extraction des substrats soit en modifiant la vitesse de course du système d'abaissement et de soulèvement en fonction des dimensions des substrats, soit en modifiant la hauteur de course du système d'abaissement et de soulèvement en fonction des dimensions des substrats.
PCT/EP1998/008469 1998-01-23 1998-12-28 Dispositif et procede pour le traitement de substrats WO1999038198A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP98966678A EP1050069A1 (fr) 1998-01-23 1998-12-28 Dispositif et procede pour le traitement de substrats
JP2000528999A JP2002502111A (ja) 1998-01-23 1998-12-28 基板を処理する装置および方法
KR1020007008012A KR20010024876A (ko) 1998-01-23 1998-12-28 기판을 처리하기 위한 장치 및 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19802579.3 1998-01-23
DE19802579A DE19802579A1 (de) 1998-01-23 1998-01-23 Vorrichtung und Verfahren zur Behandlung von Substraten

Publications (1)

Publication Number Publication Date
WO1999038198A1 true WO1999038198A1 (fr) 1999-07-29

Family

ID=7855502

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP1998/008469 WO1999038198A1 (fr) 1998-01-23 1998-12-28 Dispositif et procede pour le traitement de substrats

Country Status (6)

Country Link
EP (1) EP1050069A1 (fr)
JP (1) JP2002502111A (fr)
KR (1) KR20010024876A (fr)
DE (1) DE19802579A1 (fr)
TW (1) TW447032B (fr)
WO (1) WO1999038198A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2365624A (en) * 2000-02-25 2002-02-20 Nec Corp Wet processing device and method
JP2003031549A (ja) * 2001-07-16 2003-01-31 Toshiba Ceramics Co Ltd 半導体ウェーハのエッチング装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4722752A (en) * 1986-06-16 1988-02-02 Robert F. Orr Apparatus and method for rinsing and drying silicon wafers
JPS63250130A (ja) * 1987-04-07 1988-10-18 Toshiba Corp 半導体ウエハ処理装置
EP0385536A1 (fr) * 1989-02-27 1990-09-05 Koninklijke Philips Electronics N.V. Procédé et dispositif pour sécher des substrats après traitement dans un liquide

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2656041B2 (ja) * 1987-07-06 1997-09-24 ティーディーケイ株式会社 圧電磁器分極方法及び装置
DE3733670C1 (de) * 1987-10-05 1988-12-15 Nukem Gmbh Verfahren und Vorrichtung zum Reinigen insbesondere von scheibenfoermigen oxidischen Substraten

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4722752A (en) * 1986-06-16 1988-02-02 Robert F. Orr Apparatus and method for rinsing and drying silicon wafers
JPS63250130A (ja) * 1987-04-07 1988-10-18 Toshiba Corp 半導体ウエハ処理装置
EP0385536A1 (fr) * 1989-02-27 1990-09-05 Koninklijke Philips Electronics N.V. Procédé et dispositif pour sécher des substrats après traitement dans un liquide

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 013, no. 062 (E - 715) 13 February 1989 (1989-02-13) *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2365624A (en) * 2000-02-25 2002-02-20 Nec Corp Wet processing device and method
GB2365624B (en) * 2000-02-25 2002-08-21 Nec Corp Wet processing device
JP2003031549A (ja) * 2001-07-16 2003-01-31 Toshiba Ceramics Co Ltd 半導体ウェーハのエッチング装置

Also Published As

Publication number Publication date
JP2002502111A (ja) 2002-01-22
KR20010024876A (ko) 2001-03-26
DE19802579A1 (de) 1999-07-29
TW447032B (en) 2001-07-21
EP1050069A1 (fr) 2000-11-08

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