WO1999028957A1 - Appareil de maintien de substrat et appareil d'exposition l'utilisant - Google Patents
Appareil de maintien de substrat et appareil d'exposition l'utilisant Download PDFInfo
- Publication number
- WO1999028957A1 WO1999028957A1 PCT/JP1998/005349 JP9805349W WO9928957A1 WO 1999028957 A1 WO1999028957 A1 WO 1999028957A1 JP 9805349 W JP9805349 W JP 9805349W WO 9928957 A1 WO9928957 A1 WO 9928957A1
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- WIPO (PCT)
- Prior art keywords
- substrate
- thermal expansion
- exposure apparatus
- wafer
- base material
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7007—Alignment other than original with workpiece
- G03F9/7015—Reference, i.e. alignment of original or workpiece with respect to a reference not on the original or workpiece
Definitions
- the present invention relates to a substrate holding apparatus and an exposure apparatus using the apparatus.
- the present invention relates to a substrate holding method suitable for various manufacturing apparatuses used in a photolithography process for manufacturing a microphone port device such as a semiconductor device, a liquid crystal display device, an imaging device (CCD, etc.), a thin film magnetic head, and the like.
- the present invention relates to a substrate holding apparatus for holding a photosensitive substrate applied to an exposure apparatus for transferring a mask pattern onto a photosensitive substrate (such as a semiconductor wafer or a glass plate having a photoresist layer formed on its surface).
- a photosensitive substrate such as a semiconductor wafer or a glass plate having a photoresist layer formed on its surface.
- the invention also relates to an exposure apparatus for producing a microphone opening device as described above.
- a wafer holder for holding a wafer is made of porous ceramics as a base material, and a relatively thick coating is formed on a wafer mounting surface. After coating and coating, a final surface finish has been used.
- the heat generated by the wafer exposure is intended to be released to the lower part of the wafer holder as quickly as possible.
- a material having good heat conductivity is selected as a base material of the wafer holder. ing.
- the amount of heat that will be applied to the wafer during exposure recently tends to increase, and no matter how good the heat conductive material is used as the base material, the holder expands before the heat escapes to the outside of the holder. Not only deforms As a result, the possibility that the wafer mounted on the holder expands has become a reality.
- the final surface finishing is performed after the coating as described above, but the thickness of the coating layer in the conventional wafer holder is relatively large. At most, it was on the order of tens of ⁇ m, and the final surface finishing work required great precision and was difficult.
- the ⁇ stepper flood shadow exposure apparatus which projects a reduced size of the mask pattern in the shot Bok area on the wafer which (stepper) are widely used, collectively exposing a mask pattern to shots area on the wafer, sequentially Synchronize the mask with the wafer from a step-and-repeat system, which moves the wafer and repeats batch exposure for other shot areas, or recently from the viewpoint of expanding the exposure range and improving the exposure performance It moves, scans and illuminates with rectangular or other slit light, and sequentially exposes the shot area on the wafer, Move the following wafers are also developed ones repeated return step 'and' Sukiyan scheme scanning and exposure for the other shots region, has become so that the practically
- the wafer to be exposed is held by suction on a wafer holder placed on the wafer table.
- a fiducial mark standard The reference mark member on which the mark is formed is physically fixed ⁇
- the wafer table is moved by a linear motor or the like in the X and ⁇ directions (two axes in a plane substantially perpendicular to the optical axis of the projection optical system).
- Direction Force
- the moving mirror (reflector) of the laser interferometer for detecting its position is fixed integrally on the wafer table.
- the baseline is defined by an off-axis alignment sensor.
- the amount of heat applied to the wafer on the wafer table increases when the specified alignment base line or the distance between the alignment position and the exposure position based on the base line is near as described above. For this reason, the wafer table is deformed due to thermal expansion of various members installed on the table, and warpage occurs due to a difference in thermal expansion coefficient between the members, and the like. Since the relative positional relationship between the members changes and the errors included in the various measurement values increase, the pattern transfer cannot be performed with high accuracy, resulting in high quality and high reliability.
- a first object of the present invention is to provide a substrate holding device that does not expand or deform even when irradiation heat is generated during exposure.
- a second object of the present invention is to provide a substrate holding device in which a processing operation is easier.
- a third object of the present invention is to provide an exposure apparatus capable of manufacturing a high-quality and highly reliable microdevice even when the exposure light irradiation power is increased.
- the above-mentioned object is achieved by deciding on the concept of the prior art that quickly releases the irradiation heat generated by the irradiation of the exposure light and selecting a material that does not expand or deform even when the irradiation heat is generated. It was a change in thinking.
- the substrate holding device according to the first aspect of the present invention that achieves the first and second objects has a low thermal expansion ceramic having a thermal expansion coefficient of 0 to 0.5 ppm at room temperature as a base material, and has a predetermined shape. After the surface finishing, a coating of a material having a hardness higher than that of the base material is applied.
- the finishing of the coating material is not performed after the surface finish of the base material, so that the processing of the substrate mounting surface is facilitated and the flatness thereof can be improved.
- the substrate mounting portion hardly thermally expands. While the mask pattern is sequentially transferred to each of a plurality of partitioned areas on the photosensitive substrate in an AND-repeat method (particularly called a step-and-scan method in a scanning exposure apparatus), the heat of the photosensitive substrate is increased. Deformation can be almost suppressed.
- the mask pattern and each of the plurality of partitioned areas can be accurately positioned, and when the pattern of the mask is superimposed on the pattern formed in each partitioned area and transferred, the two patterns are used. Further it is possible to accurately superimpose over its entire surface, when the transfer by connecting a plurality of Masukupa turns on the photosensitive substrate can be tailored precisely connecting the plurality of mask patterns ⁇
- the difference in the thermal expansion coefficient between the base material and the base material is 5 ppm or less.
- the substrate mounting surface is coated with the following material. This facilitates the processing of the substrate mounting surface and improves its flatness.
- the alignment of the mask pattern with the photosensitive substrate, the mask pattern and the photosensitive substrate Overlap with the defined area (pattern) or multiple masks on the photosensitive substrate It is possible to accurately connect patterns and the like.
- the substrate holding device is particularly suitable for an exposure device that transfers a pattern of a mask onto a photosensitive substrate.
- the substrate holding device that attracts and holds the photosensitive substrate moves the photosensitive substrate relative to the mask.
- the exposure apparatus of the present invention for achieving the third object includes a substrate holder and a reference member on which a reference mark is formed on a substrate table, and a pattern from a mask illuminated by an illumination optical system.
- the substrate table, the substrate holder, and the reference member have a thermal expansion coefficient substantially equal to each other.
- the substrate table, the substrate holder, and the reference member are formed of a low thermal expansion material. Therefore, even if the temperature rises due to the heat generated by the exposure light irradiation, the thermal expansion of each of the substrate table, the substrate holder, and the reference member is small, and the position between these members is small. Changes in relationships are small.
- the substrate table, the substrate holder and the reference member are formed of materials having substantially equal thermal expansion coefficients, the difference in the coefficient of thermal expansion between the substrate table and the substrate holder, and between the substrate table and the reference member.
- the low thermal expansion ceramics used in the present invention can be made of ultra-precision glass ceramics, and some of them are cordierite-based or alumina-based ceramics. Preferably, it is a ceramic.
- the ultra-precision glass ceramics are composed of a crystallized phase and a glassy phase.
- the coating material is DLC, Tic, or Tin, and its thickness is preferably 1 to 10 ⁇ m.
- FIG. 1 is a perspective view showing the overall shape of the wafer holder according to the first embodiment of the present invention.
- Fig. 2 is an enlarged view of part A in Fig. 1.
- Figure 3 is a third embodiment of a schematic diagram showing the overall configuration of the second embodiment is ⁇
- Figure 4 ⁇ 5 is a perspective view showing a main configuration of a second embodiment of the present invention is the invention of the present invention is a perspective view showing a configuration of a main part of embodiment ⁇ embodiment
- FIG. 1 is a perspective view showing the appearance of a wafer holder 1 as a first embodiment of a substrate holding device of the present invention.
- the overall appearance of the wafer holder 1 is the same as that of the conventional wafer holder, i.e., the main body 2 of the wafer holder 1 has a substantially circular side 2b except for a part of the flat side 2a.
- the wafer mounting surface 3 holds the wafer (not shown) on the wafer holder 1 by suction.
- a number of substantially concentric grooves 4 are formed. Each groove 4 is formed by two adjacent parallel convex portions 4a and 4b as shown in FIG. (Not shown) from the back side (lower side) of the holder to the negative pressure source.
- the wafer can almost be adsorbed and held on the wafer mounting surface 2 of the wafer holder 1 over the entire surface, and is flatness correction ⁇
- the base material that forms the wafer holder main body is selected in consideration of the fact that the heat generated by the irradiation of the exposure light to the wafer mounted on the wafer holder is released below the wafer holder via the wafer holder main body. It has been.
- a low thermal expansion ceramic having a thermal expansion coefficient (linear expansion coefficient) of 0 to 0.5 ppm was selected.
- the low thermal expansion ceramics include glass ceramics or cordierite-based or alumina-based ceramics.Glass ceramics are nonporous inorganic substances, and the crystallization phase and the glass phase are mixed. It is preferable to use ultra-precision glass ceramitas containing 70 to 78% of a crystallized phase having a high quartz structure, for example, commercially available as Zerodur (trade name). Coefficient can be zero, or even slightly negative
- the coating layer is preferably of good conductivity to prevent static electricity on the wafer holder.
- the coating material is, for example, preferably DLC, T iC or T iN, and a thickness of 1 to 10 ⁇ m is sufficient.
- VD Chroxa 1 V aper Deposition
- the wafer holder according to the present embodiment has little thermal expansion or thermal deformation of the wafer holder irrespective of the heat generation due to the irradiation light to the wafer, and thus, despite the increase in the amount of heat generated due to the increase in the irradiation energy of the exposure light. Accurate exposure can be achieved.
- the coefficient of linear expansion of the low thermal expansion ceramic selected as the base material is set to 0 to ⁇ ⁇ 5 ppm, but the coefficient of linear expansion is slightly reduced, for example, as in Zeguchi Dua. Since there are materials that can be used, low-thermal-expansion-number ceramitas suitable as a base material is suitable if the absolute value of its linear expansion coefficient is 0.5 ppm or less.
- a material having a hardness higher than that of the base material is used as the coating material.
- the coefficient of linear expansion with the base material is reduced. If the difference (absolute value) is less than about 5 ppm, it can be used as a coating material. If the difference in linear expansion coefficient exceeds 5 ppm, it becomes extremely difficult to coat the base material. .
- the present embodiment it is only necessary to form a wafer mounting surface on the base material, finish the surface, and then apply the coating to the wafer mounting surface: '' There is no need to finish the surface of the coating layer. As a result, the processing of the wafer holder is facilitated, and the thickness of the coating layer can be reduced.
- the coating layer is at least a portion of the wafer mounting surface that is in contact with the wafer (for example, the convex portion 4a in FIG. 2). , 4b) only need to be formed on the top surface, In consideration of this, it is desirable to form a coating layer on the entire surface of the wafer mounting surface.
- the thickness of the coating layer formed on the base material for example, 3 0 to 5 0 mu to about m, but it may also be performed for the surface finish of the coating layer ⁇ this case, necessary to perform the surface finishing of the base material Disappears.
- the shape of the convex portion on which the wafer is placed is not limited to the ring-like shape (concentric shape) as shown in FIG. 1, but may be any shape.
- a scanning type exposure apparatus for example, a scanning 'stepper'
- a plurality of linear projections extending in a direction orthogonal to a scanning direction (moving direction) of the wafer are formed in the moving direction.
- the present invention can also be applied to a so-called pin chuck holder in which a large number of pin-shaped protrusions are formed.
- the present invention is more effective if the wafer holder as described above is used, and if a material having a thermal expansion coefficient close to zero is also used for the table for supporting the wafer holder and the moving mirror for position detection. .
- the exposure apparatus for transferring the pattern of the mask (or reticle) onto the semiconductor wafer and the wafer holder provided on the stage for moving the semiconductor wafer relative to the mask have been described.
- the present invention can be applied to a substrate holding device for holding, for example, a glass plate on which a liquid crystal display is formed or a ceramics wafer on which a thin-film magnetic head is formed.
- the substrate holding apparatus is an exposure apparatus (mirror projection apparatus) used in a photolithography process for manufacturing a micro device such as a semiconductor device, a liquid crystal display device, an imaging device (CCD), or a thin film magnetic head. Chillon aligner, stepper, scanning 'stepper, etc.) Although it is preferable, a laser beam is applied to a fuse of a circuit pattern formed on a semiconductor wafer, for example, to cut the fuse by using various manufacturing apparatuses used in the photolithographic process. 3 that can be applied to such Rezari pair device
- Exposure illumination light used in steppers and scanning 'steppers is a bright line emitted from a mercury lamp (eg, g-line, ⁇ -line), a KrF excimer laser (wavelength: 248 nm), an ArF excimer laser. (wavelength 1 9 3 nm), F 2 excimer laser (wavelength 1 5 7 nm), or Y AG LES may be any of the harmonics, such as single the addition, for example. 5 to 1 5 nm (soft X-ray region
- the E-V (Extreme 1 tra V iolet) light which has an oscillation spectrum, is used as the illumination light for exposure, and the illuminated area on the reflection mask is defined as an arc-shaped slit.
- the substrate holding device is also used for the E-V It can be applied to the location
- expansion or deformation does not matter regardless of an increase in irradiation energy of exposure light.
- the final shape finishing step for obtaining the flatness of the wafer mounting surface as a wafer holder may be performed before the formation of the surface coating layer, and the shape finishing is easy to perform. It is sufficient to make the thickness of the tinting layer as thin as 1 to 10 ⁇ m.
- FIG. 3 is a schematic configuration diagram of a step-and-repeat type reduction projection type exposure apparatus as an embodiment of the exposure apparatus of the present invention
- FIG. 4 is an enlarged perspective view of a main part thereof.
- an illumination optical system 11 is composed of an exposure light source for emitting excimer laser light, an optical integrator (homogenizer) such as a fly-eye lens or an aperture integrator for uniformizing the illuminance distribution, and an illumination system aperture stop. It consists of a reticle blind (variable field stop), and a condenser lens system.
- the reticle R as a photomask on which the pattern to be transferred is formed is held by suction on the reticle stage 12, and the exposure light I is transmitted to the reticle R on the reticle stage 12 by the illumination optical system 11. Irradiated.
- the image of the pattern in the illumination area of the reticle R is projected through the projection optical system PL at a reduction ratio of 1 / H (for example, 5 or 4 etc.), and a wafer coated with a photo resist as an exposure target.
- the ⁇ axis is projected parallel to the optical axis AX of the projection optical system PL, the X axis is parallel to the paper plane of Fig. 3 in a plane perpendicular to the Z axis, and the paper plane of Fig. 3 And the Y axis.
- the reticle stage 12 positions the reticle R sucked and held thereon on the XY plane.
- the position of the reticle stage 12 is measured by a laser interferometer (not shown).
- the operation of the reticle stage 12 is controlled by the control information, while the wafer W is held on the wafer holder (substrate holder) WH by vacuum suction, and the wafer holder WH is also evacuated on the wafer table (substrate table) 14.
- the wafer table 14 which is detachably held by being attracted is set on the XY stage 15 via a plurality of actuators displaced in the Z direction.
- the wafer tape 14 can be used to project the surface of the wafer W onto the image plane of the projection optical system P.
- the XY stage 15 is installed on the base 16 via a rear monitor. Position wafer table 14 (wafer W) in the Y and Y directions.
- the movable table (reflecting mirror) 17 of the laser interferometer is fixed to the wafer table 14, and the laser interferometer (main body) 1 that is disposed opposite to the movable mirror 17 and the movable mirror 17 is fixed.
- the X coordinate, the ⁇ coordinate, and the rotation angle of the wafer table 14 are measured by 8, and the measured values are supplied to the stage control system 19 and the main control system 13.
- the operation of the linear motor of the stage 15 is controlled based on the measurement value of the interferometer 18 and the control information from the main control system 13.
- a wafer holder WH On the wafer table 14 are provided a wafer holder WH, a reference mark member F-M, and a movable mirror 17 (17X, 17Y), each of which is formed from a material having low thermal expansion, which will be described later.
- the movable mirror 17 is composed of a movable mirror 17 for measuring the position in the X-axis direction and a movable mirror 17 Y for measuring the position in the X-axis direction, as shown in Fig. 4.
- Moving mirror 17X has its mirror surface oriented in the + X direction and its longitudinal direction is along the Y axis.
- Movable mirror 17Y has its mirror surface oriented in the + Y direction.
- Each is integrally fixed to the upper end of the wafer table 14 by, for example, screws so that the longitudinal direction is along the X axis.
- the wafer holder WH is a substantially disc-shaped member, and is detachably held at a predetermined position on the wafer table 14 by vacuum suction.
- the wafer holder WH holds the wafer W on the wafer mounting surface on the upper surface thereof.
- ⁇ each groove is substantially concentric circular multiple concave grooves are formed in communication with the vacuum source without illustrated through hole penetrating in the thickness direction of the wafer holder WH, the wafer holder WH Has a plurality of through-holes (not shown) that support the wafer W at three points during wafer replacement and that form three vertical pins that make up and down the wafer vertical movement mechanism.
- Wafer The wafer W is mounted on the wafer holder WH by the wafer vertical movement mechanism, and the negative pressure source is operated, so that the wafer W is suction-held on the mounting surface of the wafer holder WH and can be flattened.
- the wafer holder WH is preferably the one described above as the substrate holding device with reference to FIGS. 1 and 2.
- the reference mark member FM is integrally fixed on the wafer table 14 in the vicinity of the wafer holder WH by a screw or the like.
- the reference mark member FM is made of a light-transmitting member, and has an X-direction on its upper surface. At a predetermined interval, for example, a pair of cross-shaped reference marks 20 A and 2 ⁇ ⁇ B are formed.
- the lower part of the reference mark member FM of the wafer table 14 is exposed from the exposure light IL.
- An illumination system that illuminates the reference marks 20 0 and 20 ⁇ on the projection optical system PL side with the branched illumination light is installed. At the time of alignment of the reticle R, the reference mark member is driven by driving the stage 15.
- the reference marks 2 OA and 2 OB are positioned such that the centers of the reference marks 2 OA and 20 B on F ⁇ ⁇ substantially coincide with the optical axis AX of the projection optical system PL.
- two cross-shaped alignment marks 21 A and 21 B are formed so as to sandwich the pattern area on the pattern surface (lower surface) of reticle R in the X direction.
- the distance between the reference marks 2 OA and 2 OB is set substantially equal to the distance between the reduced images of the alignment marks 21 A and 21 B by the projection optical system PL.
- the reference mark member FM is illuminated with illumination light of the same wavelength as the exposure light IL from underneath the reference mark member FM, so that the reference marks 2 ⁇ A, 2 Enlarged images of the 0B projection optical system PL are formed near the alignment marks 21A and 21B of the reticle R, respectively.
- Mirrors 22A, 22B for reflecting the illumination light from the projection optical system PL in the ⁇ X direction are arranged above the alignment marks 21A, 21B. It is provided with an alignment sensor 23, 23, which is a TR (through-the-reticle) method and an image processing method so as to receive the illumination light reflected by the mirrors 22 ⁇ , 22 ⁇ .
- Each of the alignment sensors 23 ⁇ and 23 3 is provided with an imaging system and a two-dimensional imaging device such as a CCD camera, and the imaging devices are provided with alignment marks 21A and 2IB and corresponding reference marks 2OA. , 2OB, and the image signal is supplied to the alignment signal processing system 24 in FIG.
- the alignment signal processing system 24 performs image processing on the imaging signal to determine the amount of displacement of the alignment marks 21 A and 21 B with respect to the images of the reference marks 20 A and 20 B in the X and Y directions.
- the main control system 13 supplies these two sets of positional deviation amounts to the main control system 13 .
- the main control system 13 controls the reticle stage 12 so that the two sets of positional deviation amounts are symmetrical to each other and within a predetermined range.
- the center (exposure center) of the reduced image of the pattern of the reticle R by the projection optical system PL is substantially positioned at the center of the reference marks 2 ⁇ A and 2OB (substantially the optical axis AX), and the contour of the pattern
- the orthogonal sides of (the outline of the pattern area) are set in parallel to the X axis and the Y axis, respectively.
- the main control system 13 in FIG. 1 stores the coordinates of the wafer table 14 in the X and Y directions measured by the laser interferometer 18, thereby completing the alignment of the reticle R. Thereafter, any point on the wafer table 14 can be moved to the exposure center of the pattern.
- an alignment sensor 25 of an off-axis type and an image processing type is also provided on the side surface of the projection optical system PL in order to detect the position of the mark on the wafer W.
- the target mark is illuminated with broadband illumination light that is insensitive to the photoresist, the image of the target mark is imaged with a two-dimensional image sensor such as a CCD camera, and the image signal is processed as an alignment signal processing system.
- Supply 2 to 4. The distance (baseline amount) between the detection center of the alignment sensor 25 and the center of the projected image of the reticle R pattern (center of exposure) is obtained using the reference mark on the reference mark member F-M. It is stored in the main control system 13
- the alignment mark on the wafer W is measured using a wafer alignment sensor (not shown), and the whole or each shot area is measured.
- the shot area to be exposed on the wafer W is sequentially positioned at the exposure position, and then the pattern area of the reticle R is exposed to the excimer laser beam or the like from the illumination optical system 11.
- the light IL By irradiating the light IL, an image obtained by reducing the pattern in the pattern area at a reduction ratio of 1 / ⁇ is transferred to the shot area. In this manner, the pattern is applied to each shot area on the wafer W.
- the wafer W is developed, and processes such as etching are performed.
- ⁇ circuit pattern Ya are formed
- the above-mentioned wafer table 14, wafer honoreda WH, reference mark member FV1, and movable mirrors 17X and 17Y are formed of the same material having a very small coefficient of thermal expansion.
- a low thermal expansion ceramic having a thermal expansion coefficient (linear expansion coefficient) of 0.1 ppm or less is used, but as in the first embodiment, 0.5 ppm is used. Any of the following may be used.
- glass ceramics or cordierite-based or alumina-based ceramics can be used.
- the crystallization phase and the glass phase And ultra-precision glass ceramics containing about 70-78% of a crystallized phase having a high quartz structure, such as “Zerodur”
- Glass phase has positive thermal expansion property, and crystallized phase has negative thermal expansion property, so crystallization conditions are appropriately controlled.
- the coefficient of linear thermal expansion can be arbitrarily set within a specific temperature range, and the coefficient of thermal expansion can be made extremely small or zero (or minus). Because.
- Such glass-ceramics have a non-directional, porosity-free surface, and have almost the same chemical properties and strength as ordinary glass, so they can be machined using the same machines and tools used to machine ordinary glass. It is possible and convenient from that aspect
- the wafer holder WH is prepared by finishing such a low thermal expansion ceramic base material into a predetermined shape and then using a material having a hardness higher than that of the ceramic. Apply a uniform coating over the entire area of the wafer mounting surface. It is preferable that the coating layer has good conductivity in order to prevent generation of static electricity on the wafer holder WH.
- the coating material may be, for example, DLC, TIC or TiN is preferred, and a thickness of 1 to 10 ⁇ m is sufficient.
- CVD CericalVaperDePositio n
- a long and thin plate-shaped base material is formed using the ceramic material with low thermal expansion as described above, and the mirror surface is polished ultra-precisely.
- a material having a high light reflectivity such as silver or aluminum was deposited by vacuum evaporation method, y is further prepared by Runado to form a protective film on the surface thereof, the reference mark member FM is above
- a plate-shaped base material is formed using a ceramic material with low thermal expansion as described above, the surface of which is polished ultra-precisely, and one surface (upper surface) of which is formed by photolithography.
- reference marks 20 A and 20 B made of a light-shielding thin film such as chrome
- the wafer table 14, the wafer holder WH, the reference mark member FM, and the moving mirrors 17X and 17Y of the laser interferometer are each formed of a material having low thermal expansion, the exposure light IL Even when the temperature rises due to the heat associated with the radiation absorption of the wafer, the thermal expansion of each of the wafer table 14, the wafer holder WH, the reference mark member FM, and the movable mirrors 17X and 17Y is small. Since the wafer table 14, the wafer holder WH, the reference mark member, and the moving mirrors 17X and 17Y are formed using the same material, that is, the material having the same thermal expansion coefficient, the wafer table 14 is used. Between the wafer holder WH, between the wafer table 14 and the reference mark member FM, and between the wafer table 14 and the moving mirrors 17X, 17Y. Less
- the thermal expansion of the wafer holder WH itself is so small that the wafer W may be deformed due to the thermal expansion of the wafer holder WH.
- the deformation of the wafer W can be reduced because the wafer holder WH restrains it.
- the distance between the marks 2 OA and 2 OB and the fluctuation of the position can be reduced, and even if the temperature rises, the alignment error can be reduced.
- the movable mirrors 17 X and 17 Y Since the deformation is small, the measurement error by the laser interferometer 18 can be reduced.
- Quasi-mark member FM, ⁇ The change of the relative position between the wafer holder WH and the moving mirrors 17X and 17Y can be reduced, and various measurement errors can be reduced.
- the pattern can be transferred with high precision, and as a result, a high-quality microdevice with good characteristics can be manufactured.
- the wafer table 14, the wafer holder WH, the reference mark member FM, and the moving mirrors 17X and 17Y do not necessarily need to be formed of the same material. For example, they can be formed using different materials.
- the movable mirrors 17X and 17Y separately manufactured on the wafer table 14 are integrally fixed by screws or the like.
- the moving mirrors 17X and 17Y are omitted, and, for example, as shown in FIG. 5, an end face corresponding to a portion where the moving mirrors 17X and 17Y of the wafer table 14 were installed.
- (Side) 14 X and 14 Y are polished ultra-precisely, and a material with high light reflectivity such as silver or aluminum is deposited by vacuum deposition, etc., and a protective film is formed on the surface.
- the surface can be made a mirror surface by the above method. Since the coefficient of thermal expansion of the wafer table 14 is extremely small, such an integrated structure can be obtained, and not only the accuracy can be improved but also the structure can be simplified and simplified.
- the moving mirrors 17X and 17Y are integrated with the end surface of the wafer table 14 as a mirror image, but also the upper surface of the wafer table 14 is processed so that at least the wafer holder WH and the reference mark member FM It is also possible to integrate one side,
- the reference mark member FM is illuminated from below. Therefore, at least the formation areas of the reference marks 20A and 20B are light-transmitting, but the alignment sensors 23A and 23B are aligned with the alignment marks 21A and 21B on the reticle R.
- the entire reference mark member FM can be made of a material with low thermal expansion.
- the exposure target of the exposure apparatus to which the present invention is applied is not limited to a semiconductor wafer, and for example, a glass plate on which a liquid crystal display is formed or a ceramic wafer on which a thin-film magnetic head is formed is exposed.
- the substrate holder it is possible to set the substrate holder to hold the substrate (glass plate, ceramic wafer) at least in such a manner that the substrate holder has a negative expansion property to offset the thermal expansion of the substrate. By doing so, it is possible to reduce the deformation as a whole.
- the projection exposure apparatus shown in Fig. 3 is a step-and-repeat type reduced projection type exposure apparatus, but the step-and-scan type reduced projection type exposure apparatus can also be applied to a step-and-scan type.
- the reticle R and the wafer W are scanned synchronously with the projection optical system PL at a reduction ratio.
- the present invention can be applied to a mirror projection aligner.
- the exposure illumination light used for the stepper, the scanning stepper, and the like is the same as that described in the first embodiment with reference to FIGS. 1 and 2 in the form of a bright line (eg, g-line, i-line) emitted from a mercury lamp.
- a bright line eg, g-line, i-line
- K r F excimer laser wavelength 248 nm
- a r F excimer laser wavelength 1 93 nm.
- F 2 excimer laser (wavelength 1 5 7 nm), or may be any of the harmonics of a YAG laser
- E-V (EX treme Ultra Vio 1 et) light having an oscillation spectrum in the range of 5 to 15 nm (soft X-ray region) is used as the illumination light for exposure, and the illumination region on the reflection mask is used.
- Arc In addition to defining a lit-shape, it has a reduced projection optical system consisting of only a plurality of reflective optical elements (mirrors), and synchronously moves the reflection mask and wafer at a speed ratio according to the magnification of the reduced projection optical system.
- the present invention can also be applied to an EUV exposure apparatus that transfers the pattern of a reflection mask onto a wafer by using the method.
- the present invention can be applied to an electron beam exposure apparatus, a proximity type scanning X-ray exposure apparatus, and the like.
- the projection optical system PL may be any one of a reduction system, a unit magnification system, and an enlargement system. Further, the projection optical system PL is not limited to a dioptric system including only a plurality of dioptric optical elements, but includes a catadioptric system having a dioptric optical element and a reflective optical element (such as a concave mirror), or a reflective optical element only.
- a catadioptric projection optical system an optical system having at least a beam splitter and a concave mirror as a reflective optical element, and a beam splitter as a reflective optical element without using a beam splitter can be used.
- An optical system having a concave mirror and a mirror and as disclosed in U.S. Pat.Nos. 5,031,976, 5,787,229, and 5,717,518.
- the present invention is not limited to a micro device such as a semiconductor element, but is also used for manufacturing a reticle or a mask used in an optical exposure apparatus, an EUV exposure apparatus, an X-ray exposure apparatus, an electron beam exposure apparatus, and the like.
- a reticle or a mask used in an optical exposure apparatus, an EUV exposure apparatus, an X-ray exposure apparatus, an electron beam exposure apparatus, and the like.
- here 3 can also be applied to an exposure apparatus for transferring a circuit pattern on such a substrate or silicon N'weha
- DUV is (far ultraviolet) light or VUV (vacuum ultraviolet) generally in exposure apparatus using such a light transmissive type reticle is used
- As the reticle substrate quartz glass, quartz glass doped with fluorine, fluorite, magnesium fluoride, quartz, or the like is used.
- a reflective mask is used in an EUV exposure apparatus or the like, and a proximity type X-ray exposure apparatus or Transmissive masks (stencil masks, membrane masks) are used in the sagittal beam exposure equipment, and silicon wafers are used as the mask substrate.
- Transmissive masks stencil masks, membrane masks
- the illumination optical system composed of multiple optical elements and the projection optical system are incorporated into the main body of the exposure apparatus to perform the optical adjustment, and the wafer holder and the wafer table described in the above-described embodiment are provided with a low expansion property.
- the reticle stage and the wafer stage which are made of materials and consist of many mechanical parts including these, are attached to the exposure apparatus body, wiring and piping are connected, and overall adjustments (electrical adjustment, operation confirmation, etc.) are performed.
- the exposure apparatus of the above embodiment can be manufactured. It is desirable that the manufacture of the exposure apparatus be performed in a clean room where the temperature, cleanliness, etc. are controlled.
- the semiconductor device includes a step of designing the function and performance of the device, a step of manufacturing a reticle based on the design step, a step of manufacturing a wafer from a silicon material, and a pattern of the reticle by the exposure apparatus of the above-described embodiment. It is manufactured through the steps of exposing a wafer to a wafer, device assembly steps (including dicing, bonding, and packaging processes), and inspection steps.
- the present invention is configured as described above, deformation of the substrate table, substrate holder and reference member due to thermal expansion is prevented even if the irradiation power of the exposure light is increased, and a high-quality and highly reliable microdevice is manufactured. It is possible to provide an exposure apparatus capable of performing the above.
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU12616/99A AU1261699A (en) | 1997-11-28 | 1998-11-27 | Substrate retaining apparatus and exposure apparatus using the same |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9/341959 | 1997-11-28 | ||
JP34195997 | 1997-11-28 | ||
JP10/155566 | 1998-06-04 | ||
JP15556698 | 1998-06-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1999028957A1 true WO1999028957A1 (fr) | 1999-06-10 |
Family
ID=26483530
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP1998/005349 WO1999028957A1 (fr) | 1997-11-28 | 1998-11-27 | Appareil de maintien de substrat et appareil d'exposition l'utilisant |
Country Status (2)
Country | Link |
---|---|
AU (1) | AU1261699A (ja) |
WO (1) | WO1999028957A1 (ja) |
Cited By (8)
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JP2002015977A (ja) * | 2000-06-29 | 2002-01-18 | Kyocera Corp | 基板ホルダー |
JP2004343106A (ja) * | 2003-05-06 | 2004-12-02 | Asml Netherlands Bv | リソグラフィ装置、デバイス製造方法およびそれにより製造したデバイス |
JP2005228875A (ja) * | 2004-02-12 | 2005-08-25 | Canon Inc | 露光装置、デバイスの製造方法 |
US7061579B2 (en) * | 2003-11-13 | 2006-06-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2007311787A (ja) * | 2006-05-15 | 2007-11-29 | Asml Netherlands Bv | リソグラフィ装置およびデバイス製造方法 |
US7354699B2 (en) * | 2001-11-06 | 2008-04-08 | Hitachi Metals, Ltd. | Method for producing alignment mark |
JP2010010695A (ja) * | 2003-11-05 | 2010-01-14 | Asml Netherlands Bv | リソグラフィ装置及び物品サポート構造体 |
CN109686695A (zh) * | 2018-12-25 | 2019-04-26 | 上海致领半导体科技发展有限公司 | 一种晶圆承载盘的标记识别装置及方法 |
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JPH0483328A (ja) * | 1990-07-26 | 1992-03-17 | Canon Inc | ウエハチャック |
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- 1998-11-27 AU AU12616/99A patent/AU1261699A/en not_active Abandoned
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JPH03194948A (ja) * | 1989-12-22 | 1991-08-26 | Tokyo Electron Ltd | 静電チャック |
JPH0483328A (ja) * | 1990-07-26 | 1992-03-17 | Canon Inc | ウエハチャック |
JPH04360512A (ja) * | 1991-06-07 | 1992-12-14 | Canon Inc | ウエハチャックの製造方法 |
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Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002015977A (ja) * | 2000-06-29 | 2002-01-18 | Kyocera Corp | 基板ホルダー |
US7354699B2 (en) * | 2001-11-06 | 2008-04-08 | Hitachi Metals, Ltd. | Method for producing alignment mark |
JP2004343106A (ja) * | 2003-05-06 | 2004-12-02 | Asml Netherlands Bv | リソグラフィ装置、デバイス製造方法およびそれにより製造したデバイス |
JP2010010695A (ja) * | 2003-11-05 | 2010-01-14 | Asml Netherlands Bv | リソグラフィ装置及び物品サポート構造体 |
US7061579B2 (en) * | 2003-11-13 | 2006-06-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7130019B2 (en) | 2003-11-13 | 2006-10-31 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2005228875A (ja) * | 2004-02-12 | 2005-08-25 | Canon Inc | 露光装置、デバイスの製造方法 |
JP4537087B2 (ja) * | 2004-02-12 | 2010-09-01 | キヤノン株式会社 | 露光装置、デバイスの製造方法 |
JP2007311787A (ja) * | 2006-05-15 | 2007-11-29 | Asml Netherlands Bv | リソグラフィ装置およびデバイス製造方法 |
US7978308B2 (en) | 2006-05-15 | 2011-07-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2013042157A (ja) * | 2006-05-15 | 2013-02-28 | Asml Netherlands Bv | リソグラフィ装置およびデバイス製造方法 |
US9019476B2 (en) | 2006-05-15 | 2015-04-28 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN109686695A (zh) * | 2018-12-25 | 2019-04-26 | 上海致领半导体科技发展有限公司 | 一种晶圆承载盘的标记识别装置及方法 |
Also Published As
Publication number | Publication date |
---|---|
AU1261699A (en) | 1999-06-16 |
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