WO1999025007A1 - Mandrin electrostatique a plusieurs electrodes, dote de fusibles dans des cavites creuses - Google Patents

Mandrin electrostatique a plusieurs electrodes, dote de fusibles dans des cavites creuses Download PDF

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Publication number
WO1999025007A1
WO1999025007A1 PCT/US1998/023834 US9823834W WO9925007A1 WO 1999025007 A1 WO1999025007 A1 WO 1999025007A1 US 9823834 W US9823834 W US 9823834W WO 9925007 A1 WO9925007 A1 WO 9925007A1
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WO
WIPO (PCT)
Prior art keywords
fuse
electrodes
electrode
insulator
electrostatic chuck
Prior art date
Application number
PCT/US1998/023834
Other languages
English (en)
Inventor
You Wang
Jon T. Clinton
Surinder S. Bedi
Shamouil Shamouilian
Ananda H. Kumar
Mark S. Contreras
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to JP2000519911A priority Critical patent/JP2001523042A/ja
Publication of WO1999025007A1 publication Critical patent/WO1999025007A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Definitions

  • the present invention is related to electrostatic chucks for holding substrates in process environments.
  • Electrostatic chucks are used to hold substrates, such as a silicon wafers, during processing of the substrate in a process chamber.
  • a typical electrostatic chuck includes an insulated electrode that is electrically biased with respect to the substrate by an electrical voltage.
  • process gas is introduced into the process chamber, and in certain processes, an electrically charged plasma is formed from the process gas.
  • monopolar chucks the electrical voltage applied to the electrode and the charged plasma species above the substrate induce opposing electrostatic charge in the electrode and substrate that results in an attractive electrostatic force that electrostatically holds the substrate to the chuck.
  • bipolar chucks two or more electrodes are maintained at different electrical potentials to electrostatically hold the substrate in both plasma and non- plasma processes.
  • the electrostatic chuck comprises a metal electrode covered by a thin insulator layer that maximizes electrostatic attractive forces.
  • the thin insulator layer can be punctured by sharp edged substrate fragments, or eroded in the process environment to expose the electrode of the chuck. Such puncturing is particularly likely to occur when the insulator is composed of a soft polymeric material that has low puncture resistance. Exposure of the electrode at even a single pinhole in the insulator can cause arcing between the electrode and plasma and require replacement of the entire chuck. Failure of the electrostatic chuck during processing of a substrate can result in loss of the entire substrate at a significant cost.
  • One solution to the puncturing problem is to make the chuck resistant to failure from erosion of the insulator by the use of a plurality of fuses, each fuse electrically connecting at least one electrode in series to a power bus that supplies the voltage to the electrodes of the chuck, as disclosed in commonly assigned U.S. Patent No. 5,751 ,357, by Kumar et al.
  • the fuses burn-out and electrically disconnect the electrodes from the power bus when the insulator punctures and exposes the electrodes to the plasma process environment because of the plasma discharge current that flows through the fuses.
  • the burned-out fuses can result in a link of conductive residue that can form a weak conductive pathway between the electrode and the power bus.
  • the residual conductive pathway allows the plasma to continue to discharge through the fuse, causing plasma instabilities in the chamber that result in non-uniform processing of the substrate and/or movement of the substrate by weakening the electrostatic force holding the substrate.
  • an electrostatic chuck that is resistant to failure from puncturing by substrate fragments, and from failure by erosion in erosive process environments. It is also desirable for the chuck to be tolerant to punctures to allow the chuck to continue holding a substrate even with multiple punctures in the insulator layer. It is further desirable to have an electrostatic chuck that tolerates erosion or failure of portions of an insulator covering the electrode without allowing plasma currents to continue to discharge through the electrode.
  • the present invention provides a failure resistant electrostatic chuck for holding a substrate in a process environment, that tolerates failure of electrodes without allowing plasma to continue to discharge through the failed electrodes of the chuck.
  • One version of the chuck comprises an insulator having a surface for receiving a substrate thereon. Embedded in the insulator is (i) an electrode for electrostatically holding a substrate upon application of voltage to the electrode; (ii) an electrical power bus comprising an output terminal for conducting the voltage to the electrode, and (iii) a fuse connecting in series the electrode to the output terminal from the power bus, the fuse positioned within an enclosed hollow cavity in the insulator.
  • the fuse comprises an amperage rating sufficiently low to electrically disconnect the electrode from the output terminal, when the insulator punctures to expose the electrode to the plasma process environment thereby causing a current discharge from the plasma to flow through the fuse.
  • the hollow cavity surrounding the fuse comprises a surface area sized sufficiently large to receive debris from burn-out of the fuse without forming a conductive pathway between the electrode and the output terminal of the power bus.
  • the electrostatic chuck comprises a plurality of electrodes, output terminals, fuses, and hollow cavities embedded within the insulator, to provide a redundancy of electrodes that continue to hold the substrate even if some of the electrodes are disconnected by the fuses.
  • the insulator of the chuck comprises multiple layers including a cover layer and a support layer.
  • the support layer supports the electrodes, electrical power bus, and fuses.
  • the upper surface of the cover layer comprises insulator for insulating the electrodes, and the lower surface of the cover layer comprising hollow cavities positioned around the fuses on the support layer.
  • the electrostatic chuck comprises at least one first insulator layer comprising a plurality of electrodes for electrostatically holding a substrate upon application of a voltage to the electrodes, the upper surface of the insulator layer adapted to receive a substrate thereon.
  • One or more second insulator layers further comprise an electrical power bus having a plurality of output terminals for conducting the voltage to the electrodes, and a plurality of fuses positioned in hollow cavities in the insulator layers, each fuse provided for connecting in series at least one electrode to an output terminal of the power bus.
  • the first and second insulator layers can be joined together to form a unitary structure or can be separate and non-contiguous from one another.
  • the present invention comprises a method for forming the failure resistant electrostatic chuck comprising electrodes connected via fuses enclosed in hollow cavities to output terminals from an electrical power bus.
  • the method comprises the steps of (a) forming electrodes, electrical power buses, and fuses on an insulating support layer, (b) forming hollow cavities in an insulating cover layer, and (c) joining the insulating cover layer to the insulating support layer so that each hollow cavity is aligned or positioned over a fuse.
  • the cover layer can comprise one or more of adhesive and insulating layer.
  • layers of electrical conductor and resistor material are deposited on the insulating support layer, and etched to form a plurality of electrodes, each electrode connected to an output terminal from a power bus via a fuse.
  • Figure 1 is a partial sectional schematic side view of an embodiment of the electrostatic chuck according to the present invention.
  • Figure 2 is a partial sectional schematic side view of a process chamber showing operation of a monopolar electrostatic chuck according to the present invention
  • Figure 3a is a partial sectional schematic top view of a hollow cavity in the insulator of the chuck of the present invention
  • Figure 3b is a partial sectional schematic side view of an electrostatic chuck of the present invention showing a plurality of layers forming the insulator and a hemispherical hollow cavity in the insulator
  • Figure 3c is a partial sectional schematic side view of an electrostatic chuck of the present invention showing a plurality of layers forming the insulator and a cylindrical hollow cavity in the insulator;
  • Figure 4 is a partial sectional schematic side view of a process chamber showing operation of a bipolar electrostatic chuck of the present invention
  • Figure 5 is a cross-sectional schematic side view of another embodiment of an electrostatic chuck according to the present invention.
  • Figure 6 is a cross-sectional schematic side view of another embodiment of an electrostatic chuck according to the present invention showing an electrical power bus below the electrodes;
  • Figure 7 is a cross-sectional schematic side view of another embodiment of an electrostatic chuck according to the present invention showing a first insulator having a plurality of electrodes and a second insulator covering the fuses;
  • Figure 8 is a cross-sectional schematic side view of another embodiment of an electrostatic chuck according to the present invention.
  • Figures 9a to 9g are sectional schematic side views showing successive steps in the fabrication of an electrostatic chuck according to the present invention.
  • Figure 10a is a schematic top view of an electrode, power bus, and fuse assembly of an electrostatic chuck manufactured using the process illustrated in Figures 9a to 9g;
  • Figure 10b is an enlarged schematic view of the inset box 10b of Figure 10a showing details of the electrode, power bus, and fuse assembly;
  • Figure 1 1 is a schematic top view of a bipolar electrostatic chuck according to the present invention having two semicircular groups of electrodes;
  • Figure 1 2 is a schematic top view of another bipolar electrostatic chuck according to the present invention having a double ring electrode configuration;
  • Figure 1 3 is a partial sectional schematic side view of another version of the electrostatic chuck of the present invention showing a plurality of adhesive and polymeric layers forming the insulator and a cylindrical hollow cavity in the insulator layers;
  • Figure 14 is a flow chart illustrating the steps of forming one version of the electrostatic chuck of the present invention.
  • Figures 1 5a to 1 5f are sectional schematic side views showing successive steps in the fabrication of a version of the electrostatic chuck according to the present invention.
  • the present invention is useful for multi-electrode structures, such as capacitors, batteries, and electrostatic chucks.
  • multi-electrode structures such as capacitors, batteries, and electrostatic chucks.
  • electrostatic chucks useful for holding substrates in process environments
  • many other versions of the invention should be apparent to those skilled in the art, without deviating from the scope of the invention. Therefore, the spirit and scope of the present invention should not be limited to the description of the preferred versions contained herein.
  • an electrostatic chuck 20 of the present invention comprises a plurality of electrodes 25a-h, such as monopolar or bipolar electrodes, which are embedded in or covered by insulator 30.
  • the electrodes 25a-h electrostatically hold a substrate 35 when a voltage is applied to the electrodes 25a-h.
  • Either a single electrical potential or bias is applied to each individual segment of the electrode 25a-h, as shown in Figure 1 , or a different potential or bias is applied to each individual segment of the electrode, such as in a bipolar electrostatic chuck.
  • the electrodes 25 are biased in any variation of the above, i.e., a group of electrodes is supplied with one electrical potential and at least one other group of electrodes is supplied with a different potential.
  • An electrical power bus 40 comprises one or more output terminals 45a-h for conducting voltage to the electrodes 25a-h.
  • One or more fuses 50a-h are each positioned within enclosed hollow cavities 55a-h in the insulator 30.
  • Each fuse (for example, fuse 50a) connects at least one electrode 25a in series to an output terminal 45a and electrically disconnects the electrode 25a from the output terminal 45a when the insulator 30 on the electrode punctures and exposes the electrode 25a to the plasma process environment causing a current to discharge from the plasma and flow through the electrode 25a and fuse 50a.
  • each of the hollow cavities 55a-h in the insulator 30 is aligned over a fuse and comprises a surface area sized sufficiently large to receive or contain debris from burn-out of a fuse 50a-h without forming a conductive pathway between the electrode 25a-h and the output terminal 45a-h of the power bus 40.
  • the electrostatic chuck 20 is secured on a support 60 in a process chamber 65 that forms an enclosure for processing the substrate 35.
  • the electrostatic chuck 20 comprises a base 80 with a bore 85 therethrough, that is useful for supporting the electrodes 25a-c and insulator 30.
  • An electrical connector 90 electrically connects the power bus 40 to a voltage supply.
  • the electrical connector 90 comprises (i) an electrical lead 95 that extends through the bore 85 of the base 80, and (ii) an electrical contact 100 that electrically engages a voltage supply terminal 105 at the interface between the base 80 and the support 60.
  • a first voltage supply 1 10 provides an electrical voltage to the voltage supply terminal 105 for operating the chuck 20.
  • the first voltage supply 1 10 typically includes a circuit which comprises a high voltage DC source of about 100 to 3000 volts, connected to a high voltage readout, through a 10 M ⁇ resistor.
  • a 1 M ⁇ resistor in the circuit limits current flowing through the circuit, and a 500 pF capacitor is provided as an alternating current filter.
  • a second voltage supply 1 15 is connected to the support 60 in the process chamber 65. At least a portion of the support 60 is typically electrically conductive and functions as a process electrode, or cathode, for forming a plasma in the chamber 65.
  • the second voltage supply 1 15 electrically biases the support 60 with respect to an electrically grounded surface 120 in the chamber 65, to form an electric field that generates or energizes a plasma formed from the process gas in the chamber 65.
  • An insulative flange 125 is disposed between the support 60 and the grounded surface 120 to electrically isolate the support 60 from the grounded surface 120.
  • the second voltage supply 1 15 comprises an RF impedance that matches the impedance of the process chamber 65 to the impedance of the line voltage, in series with an isolation capacitor.
  • the process chamber 65 is evacuated and maintained at a sub-atmospheric pressure.
  • a substrate 35 is placed on the chuck 20, and the electrodes 25a-c of the chuck 20 are electrically biased with respect to the substrate 35 by the first voltage supply 1 10.
  • process gas is introduced into the chamber 65 via the gas inlet 70, and plasma is formed from the process gas by activating the second voltage supply 1 15 or by using alternative plasma generator sources, such as inductor coils (not shown).
  • the voltage applied to the electrodes 25a-c causes electrostatic charge to accumulate in the electrodes 25a-c, and the plasma in the chamber 65 provides electrically charged species having opposing polarity which accumulate in the substrate 35.
  • the accumulated opposing electrostatic charge results in an attractive electrostatic force that electrostatically holds the substrate 35 to the chuck 20.
  • a heat transfer fluid source 140 can be used to supply heat transfer fluid to grooves 145 in the insulator 30 of the chuck.
  • the substrate 35 held on the chuck 20 covers and seals the grooves 145 and prevents the heat transfer fluid from leaking out.
  • the heat transfer fluid in the grooves 145 can be used to heat or cool the substrate 35 to regulate the temperature of the substrate 35 and maintain the substrate 35 at constant temperatures during processing.
  • the grooves 145 form a pattern of intersecting channels extending through the insulator 30.
  • the heat transfer fluid is typically a gas such as helium which is held at a pressure of about 1 to 10 Torr in the grooves.
  • the multi-electrode chuck 20 of the present invention is resistant to failures occurring from erosion or puncture of the insulator 30 on the electrodes 25a-c.
  • a sharp-edged fragment punctures the portion of the insulator 30 that covers a particular electrode (for example electrode 25a)
  • the electrostatic charge in the substrate 35 flows through the exposed electrode 25a and through the fuse 50a connected to the electrode.
  • the current flowing through the fuse 50a as a result of the electrostatic discharge causes the fuse 50a to automatically switch-off in a relatively short time to electrically disconnect the electrode 25a from the output terminal 45a of the electrical power bus 40.
  • each assembly of a fuse 50a and a corresponding electrode 25a functions as an independently operated micro electrostatic chuck having a small contact area, and obtains its power supply from an independently powered output terminal 45 of the power bus 40.
  • the electrostatic chuck 20 of the present invention provides significant advantages by continuing to hold the substrate 35 and resisting catastrophic failure even when the portion of an insulator 30 covering an electrode 25 is punctured or eroded.
  • the fuses 50 are positioned within the hollow cavities 55 in the insulator layer 30. Without hollow cavities 55 around the location of the fuses 50, the fuses burn-out to form debris particles or molten liquid in the insulator 30 that remain in close contact to form conducting pathways that lead to arcing across the debris even when the debris is only slightly conductive.
  • the hollow cavities 55 enclose the fuses 50 and comprise a volume having a surface area sized sufficiently large to receive debris from burn-out or melting of the fuse 50 without forming a conductive pathway between the electrode 25 and the output terminal 45 of the power bus 40.
  • the hollow cavities 55 comprise volumes having a width (which could be any dimension including a diameter, height, depth or width) of about 0.25 to about 5 times the length of the fuses 50, and more preferably from about 0.5 to about 2 times the length of the fuse.
  • the surface area of the cavities 55 should be sufficiently large to receive fuse debris over a spread out surface region that reduces the possibility of conducting linkages from forming in the debris.
  • the hollow cavities 55 in the insulator 30 can comprise a cylinder having a diameter about equal to the length of the fuse 50 and a height equal to the half the combined thickness of the top insulator layers 30b and 30c; or a hemispherical or spherical shape having a radius equal to about half the fuse length (as shown in Figure 3b).
  • the insulator 30 preferably comprises a plurality of layers including first and second layers.
  • a first support layer 30a supports the electrodes 25, power bus 40, output terminals 45, and fuses 50.
  • a second cover layer 30b covers the electrodes 25, power bus 40, output terminals 45, and fuses 50, and comprises the plurality of hollow cavities 55 in the insulator layer that are positioned around the fuses 50.
  • the advantage of this version is to allow the fuses 50 and electrodes 25 to be formed directly on the unbroken planar surface of the support layer 30a; while the cavities 55 can be formed in the cover layer 30b.
  • the layers can be fabricated from different materials or in different thicknesses, to provide different dielectric, semiconducting or insulating properties in the two layers.
  • one of the cover layers 30c can be fabricated from a semiconducting ceramic material to form Johnsen-Rahbek-type electrostatic chucks in which the electrostatic charge leaks from the electrode 25 and accumulates in the ceramic material to form electrostatic charge below the surface of the chuck 20; while the lower layer 30b is fabricated from a more insulating material.
  • a second cover layer 30b having the plurality of hollow cavities 55 positioned around fuses 50 comprises an adhesive layer that joins a third insulating layer 30c covering the adhesive layer 30b to the support layer 30a.
  • the chuck 20 comprises an insulator 30 covering a first group of electrodes 146 and a second group of electrodes 148 that are sized and configured to serve as bipolar electrodes.
  • the groups of electrodes 146, 148 are capable of electrostatically holding a substrate 35 when a voltage is applied to the electrodes.
  • a first power bus 40a having a first set of output terminals 45a provides voltage to the first group of electrodes 146.
  • a second power bus 40b having a second set of output terminals 45b provides voltage to the second group of electrodes 148.
  • a plurality of fuses 50a electrically connect electrodes 25a in series to output terminals 45a from power buses 40a and 40b.
  • Each fuse 50a is positioned within an enclosed hollow cavity 55a in the insulator 30, and electrically disconnects the electrodes 25a from the output terminals 45a when the insulator 30 on an electrode punctures and exposes the electrode to the process environment causing a plasma discharge current to flow through the electrode and the associated fuse 50.
  • the first voltage supply 1 10 provides a differential electrical voltage to the first and second power buses 40a and 40b.
  • the first voltage supply 1 10 comprises two DC power supplies that provide a negative voltage to the first electrodes 146 and a positive voltage to the second electrodes 148 to maintain the electrodes at a differential electric potential relative to one another.
  • the opposing electric potentials of the groups of electrodes 146 and 148 induce opposing electrostatic charges in the groups of electrodes 146 and 148, and in the substrate 35 held to the chuck 20, without use of a plasma in the process chamber 65, causing the substrate 35 to be electrostatically held to the chuck 20.
  • Bipolar electrode configurations are advantageous for non-plasma processes in which there are no charged plasma species to serve as charge carriers for electrically biasing the substrate 35.
  • the electrical power bus 40 comprises a planar conductive layer spaced apart from the electrodes 25 that provides a voltage for operating all of the electrodes 25.
  • Each fuse 50 electrically connects, in series, at least one electrode segment 25 to the power bus 40.
  • the fuses 50 comprise a resistive coating 150 on a hole 155 that extends between an electrode 25 and the planar conductive layer, the resistive coating 150 comprising, for example, a thin coating of a conductive or resistive material that serves as a resistor element.
  • This version has certain advantages of fabrication, because the resistive fuse elements can be easily fabricated by depositing the resistive coating 150 on holes 155 formed in an insulator 30 layer covering the planar conductive layer; and the holes can be shaped and sized sufficiently large to prevent burned-out or melted residue from the fuse 50 to coagulate into conductive linkages.
  • the output terminals 45 of the electrical power bus 40 are substantially coplanar with the electrodes 25.
  • the electrodes 25 are coplanar so that the electrostatic contact area of the electrodes 25 lie in a single plane.
  • the output terminals 45 are positioned coplanar to the electrode plane, between, and spaced apart from, the electrodes 25. This arrangement allows the fuses 50 to be positioned in between the electrodes 25, thereby reducing the total thickness of the electrode 25 and insulator layer 30, and maximizing the attractive electrostatic force of the chuck 20.
  • the chuck 20 comprises (i) one or more peripheral electrodes 25a in a periphery of the insulator 30, and (ii) one or more central electrodes 25b in central portion of the insulator 30.
  • a first power bus 40a having a first set of output terminals 45a provides voltage to the peripheral electrodes 25a
  • the second power bus 40b having a second set of output terminals 45b provides voltage to the central electrodes 25b.
  • Fuses 50a-b electrically connect the electrodes 25a-b in series to output terminals 45a-b from the power buses 40a and 40b, as shown.
  • the fuse 50a electrically disconnects the peripheral electrode 25a from the power bus 40a when any one peripheral electrode 25a is exposed to the process environment.
  • This version shown in Figure 8 allows separate monitoring and supplying of voltage to the peripheral electrodes 25a and central electrodes 25b.
  • the peripheral electrodes 25a are particularly important when heat transfer fluid is used to regulate the temperatures of the substrate 35 held on the chuck 20, because the peripheral electrodes 25a seal the periphery of the chuck preventing leakage of heat transfer fluid.
  • the peripheral electrodes 25a fail, the heat transfer fluid held below the substrate leaks out, causing excessive ' heating and resultant damage to the periphery of the substrate.
  • This chuck configuration allows application of higher voltage to the peripheral electrodes 25a to provide increased electrostatic holding force at the periphery of the chuck 20, or replacement of the chuck, if one or more of the peripheral electrodes 25a is exposed to the plasma environment.
  • the electrostatic chuck 20 can comprise at least one first insulator 30a having a plurality of electrodes 25a-b for electrostatically holding a substrate upon application of a voltage to the electrodes.
  • the upper surface of the insulator 30a is a flat surface shaped and sized to receive a substrate thereon.
  • One or more second insulators 30b further comprise a single or multiple electrical power buses 40a and 40b each of which comprises a plurality of output terminals 45a-b that conduct voltage to the electrodes.
  • a plurality of fuses 50a-b are positioned in hollow cavities in the second insulator 30b.
  • Each fuse 50a-b connects in series at least one electrode 25a-b to an output terminal 45a-b of the power buses 40a and 40b.
  • the first insulator 30a and second insulator 30b can be joined together to form a unitary structure or can be separate and non-contiguous structures.
  • a current detector 175 is electrically connected in series to the electrical power bus 40, as shown in Figure 1 , to detect the flow of current through the fuses 50a-h.
  • a current detector 175 detects the current before the fuse 50a electrically disconnects the electrode 25a from the output terminal 45a of the power bus 40.
  • a suitable current detector 175 comprises an ammeter connected in series to the electrical power bus 40.
  • the current detector 175 can be used to provide early warning of the failure of one or more electrodes 25, to allow replacement of the chuck before catastrophic failure occurs during a processing cycle.
  • an electrical counter 180 is connected to the current detector 175 to count the number of current surges through the current detector 175 to provide an estimate of the number of electrodes 25a-h exposed to the process environment, or the number of disconnected electrodes 25a-h.
  • the counter 180 can be a conventional counter capable of counting the number of current discharges through the current detector 175.
  • a counter typically comprises a register that counts the impulses generated by an analog-to-digital convertor and generates a position reading.
  • an analog-to-digital convertor 185 is used in series before the counter 180 to convert the analog current output to a digital current output.
  • a typical analog-to-digital convertor 185 comprises an electronic circuit that receives a magnitude-scaled analog voltage and generates a binary-coded number proportional to the analog input.
  • the analog-to-digital convertor 185 provides the binary output indicative of the analog input at precise repetitive time intervals.
  • Conventional electrical counters and analog-to-digital converters can be used.
  • separate current detectors 175a and 175b are used to detect current flow in the peripheral electrodes 25a and central electrodes 25b of the chuck 20, respectively.
  • the use of two current detectors allows separate detection of failure of the peripheral electrodes 25a and central electrodes 25b.
  • the current detector 175a can be used to provide early warning of the failure of one or more peripheral electrodes 25a, to allow replacement of the chuck before the chuck 20 fails during a processing cycle.
  • the base 80 of the chuck 20, which is used to support the electrodes 25a-c and insulator 30, is typically shaped and sized to correspond to the shape and size of the substrate 35 to maximize heat transfer and provide a wide holding surface.
  • the substrate 35 is disk " shaped, a right cylindrically shaped base 80 is preferred.
  • the base 80 is of aluminum and has a cylindrical shape with a diameter of about 100 mm to 225 mm, and a thickness of about 1 .5 cm to 2 cm.
  • the top and bottom surfaces of the plate are ground using conventional grinding techniques, until the surface roughness of the plate is less than 1 ⁇ m, so that the base 80 can uniformly contact the support 60 and the substrate 35, to allow efficient thermal transfer between the substrate 35 and the support 60.
  • the base 80 also has bores sized sufficiently large to insert the electrical connector 90 therethrough with minimal clearance, a suitable clearance being less than about 5 mm.
  • the insulator 30 can be a unitary insulator 30 sheet sized sufficiently large to cover and enclose all the electrodes 25a-c, fuses 50a-c, output terminals 45a-c, and the electrical power bus 40 of the chuck 20 as shown in Figure 1 .
  • the insulator could be formed from a plurality of layers as shown in Figures 3b-c.
  • the resistivity of the insulator 30 should be (i) sufficiently low to allow rapid electrostatic charge accumulation and dissipation to provide a rapid response time, and (ii) sufficiently high to prevent leakage of the voltage applied to the electrodes 25a-c which can damage the devices formed on the substrate 35.
  • the insulator 30 has a resistivity ranging from about 10 13 ⁇ cm to 10 20 ⁇ cm, and a dielectric constant of at least about 3, and more preferably at least about 4.
  • a suitable thickness of the insulator 30 depends on the electrical resistivity and dielectric constant of the insulator. For example, when the insulator 30 has a dielectric constant of about 3.5, the thickness of the insulator 30 is typically about 10 ⁇ m to about 500 //m, and more typically from about 100 ⁇ m to about 300 ⁇ m.
  • Suitable insulator 30 materials have dielectric breakdown strengths of typically at least about 3.9 volts/micron (100 volts/mil), and more typically at least about 39 volts/micron ( 1000 volts/mil).
  • the insulator 30 comprises a two layer laminate structure, that includes (i) a first insulator layer 30a below the electrodes 25, and (ii) a second layer insulator 30b over the electrodes 25, as illustrated in Figures 9a to 9g.
  • each insulator layer 30a-b has a substantially equivalent thicknesses ranging from about 50 ⁇ m to about 100 ⁇ m.
  • the insulator 30 comprises an electrically insulative polymeric material, such as polyimide, polyketone, polyetherketone, polysulfone, polycarbonate, polystyrene, nylon, polyvinylchloride, polypropylene, poiyethersulfone, polyethylene terephthalate, fluoroethylene propyiene copolymers, cellulose, triacetates, silicone, and rubber. More preferably, the insulator 30 comprises polyimide having a high dielectric breakdown strength, ranging from about 200 to about 400 volts/ ⁇ m (5,000 to 10,000 volts/mil), which allows use of thin insulator 30 layers thereby maximizing electrostatic attractive force.
  • an electrically insulative polymeric material such as polyimide, polyketone, polyetherketone, polysulfone, polycarbonate, polystyrene, nylon, polyvinylchloride, polypropylene, poiyethersulfone, polyethylene terephthalate, fluoroethylene propyiene cop
  • polyimide is resilient enough to deform slightly under the electrostatic clamping pressure to provide enhanced heat transfer when a heat transfer fluid is introduced in the microscopic gap between the substrate 35 and the resilient polyimide.
  • Polyimide dielectric layers are typically formed by spin coating or bonding of a polyimide film over an electrode 25.
  • the insulator 30 can comprise a ceramic material, including (i) oxides such as Al 2 0 3 , BeO, Si0 2 , Ta 2 0 5 , Zr0 2 , CaO, MgO, Ti0 2 , BaTi0 3 , (ii) nitrides such as AIN, TiN, BN, Si 3 N 4 ), (iii) borides such as ZrB 2 , TiB 2 , VB 2 , W 2 B 3 , LaB 6 , (iv) suicides such as MoSi 2 , and (v) diamond.
  • the ceramic insulator is typically formed by either sputtering, flame spraying, CVD, or by solution coating, a thin ceramic film onto the electrode surface.
  • the ceramic insulator can be formed by sintering a ceramic block with the electrodes 25 embedded therein.
  • the insulator 30 is resistant to temperatures in excess of 50°C, and more preferably in excess of 100°C, so that the chuck 20 can be used for high temperature processes.
  • the insulator 30 has a high thermal conductivity so that heat generated in the substrate 35 during processing can dissipate through the chuck 20, a suitable thermal conductivity being at least about 0.10 Watts/m/K.
  • a protective coating (not shown) can be applied on the insulator 30 to protect the insulator 30 from chemical erosion when the chuck 20 is used in erosive processing environments.
  • the electrodes 25 are made from an electrically conductive material, such as for example, metals such as copper, nickel, chromium, aluminum, and alloys thereof.
  • the thickness of the electrodes 25 is from about 1 ⁇ m to about 100 ⁇ m, and more typically from 1 ⁇ m to 50 ⁇ m.
  • each electrode 25 comprises a contact area of from about 10 '4 to 10 "1 times the area of the substrate 35.
  • each segment of the electrode 25 comprises a contact area of at least about 20 mm 2 , and more preferably from about 50 to about 1000 mm 2 .
  • the shape and size of the area covered by the electrodes 25 varies according to the size and shape of the substrate 35.
  • the segments of the electrodes 25 are arranged in a disk shaped configuration to maximize the total area of the electrode 25 below the substrate 35.
  • the electrodes 25 cover a total area of about 50 to about 500 cm 2 , and more typically from 80 to 380 cm 2 .
  • each group of electrodes 146 and 148 are substantially equivalent and coplanar to one another, so that the electrodes generate equivalent electrostatic clamping forces on the substrate 35.
  • the total contact area of each group of electrodes (or electrode segments) is from about 50 to about 250 cm 2 , and more preferably from about 100 to about 200 cm 2 .
  • the first group of electrodes 146 and second group electrodes 148 can each comprise a semicircular area, as shown in Figure 1 1 .
  • the first group of electrodes 146 can comprise at least one inner ring of electrodes
  • the second group of electrode 148 can comprise at least one outer ring of electrodes, as shown in Figure 1 2.
  • Electrical isolation voids 190 are used to electrically isolate the groups of electrodes 146, 148 from one another.
  • the electrical isolation voids 190 are sized and configured to serve as grooves for holding heat transfer fluid for regulating the temperature of the substrate 35 on the chuck 20.
  • the grooves can be formed in the isolation voids 190 by cutting through the insulator 30 overlying the isolation void so that the grooves extend partially through the insulator 30, or the insulator 30 can recede into the isolation voids 190 to form grooves positioned between the electrodes 25a-c as shown in Figure 2.
  • Electrical connectors 90 are used to electrically connect the electrical power bus 40, or the first and second power buses 40a, 40b, to the first voltage supply 1 10.
  • electrical connectors 90 are used to separately electrically connect the first group of electrodes 146 to the first power bus 40a, and connect the second group of electrodes 148 to the second power bus 40b.
  • the electrical connectors 90 are substantially identical, and to avoid repetition will only be described once.
  • the electrical connector 90 comprises an electrical lead 95 that extends through the bore 85 in the base 80, and an electrical contact 100.
  • the length of the electrical lead 95 is from about 10 mm to about 50 mm, and the width of the electrical lead 95 is from about 2 mm to about 10 mm.
  • the electrical contact 100 is disk-shaped with an exposed area sized to directly contact and electrically engage a voltage supply terminal 105, the area preferably being from about 50 to about 400 mm 2 .
  • Each fuse 50 is self-operating and capable of electrically disconnecting at least one electrode 25 from an output terminal of the power bus when a current exceeding the amperage rating of the fuse flows through the electrode 25 and contiguous fuse 50.
  • the fuses 50 are current-sensitive elements capable of automatically electrically disconnecting the electrode 25 from the output terminal 45 during large current surges that arise from discharge of plasma when the insulator 30 punctures and exposes an electrode 25 to the process environment. Discharge of the plasma through the electrode 25 and contiguous fuse 50 causes the fuse to switch- off, for example by melting or burning out.
  • each fuse comprises a conductor having a reduced cross-section surrounded by an insulator.
  • the ampere rating of the fuse 50 is the current the fuse can carry without burning-out, melting, or exceeding specific temperature rise limits.
  • the interrupting rating of the fuse 50 is the maximum short-circuit current that a fuse can safely interrupt. An instantaneous rise in current causes the fuse to switch-off usually in less than a quarter of a cycle.
  • each fuse 50 is capable of electrically disconnecting an electrode 25 from an output terminal 45 when a current of at least about 300 microamps, more typically at least about 500 microamps, and most typically at least about 1 milliamp, flows through the fuse 50.
  • the fuse should be constructed to burn-out quickly in less than about 100 milliseconds, and more preferably in less than 10 milliseconds.
  • each fuse 50 comprises a resistive wire or layer between the electrode and power bus, that has a resistance of at least about 100 ⁇ , more preferably from about 1 00 to 3000 ⁇ , and most preferably about 300 ⁇ .
  • the resistor can comprise a thin lead or layer of a resistive material connecting an electrode 25 to an output terminal 45 of power bus 40.
  • R p x (l/A)
  • the resistor can comprise a conductive metal, such as copper or aluminum, formed as a very thin lead or layer connecting an electrode 25 to an output terminal 45.
  • the resistor can be fabricated from conventional resistive materials, including carbon, nickel, phosphorous, chromium, tin, and mixtures thereof.
  • the resistor material is fabricated from nickel-phosphorous, nickel-chromium, chromium, or tin, which are highly current sensitive materials.
  • the shape and size of the fuse 50 namely the length, width, diameter, or thickness of the fuse is dependent upon the fuse material and the amperage of the current flowing through the fuse.
  • a suitable thickness for a resistor fuse 50 constructed from a resistive material such as nickel-phosphorous, nickel-chromium, chromium or tin, and having an ampere rating of about 50 mA is from about 0.005 to about 1 ⁇ m, and more preferably from about 0.01 to about 0.2 ⁇ m.
  • the fuse comprises a thin lead of resistive material connecting an electrode 25 to an output terminal 45 over a power bus 40.
  • the thin lead burns out or melts when the ampere rating of the current flowing through the resistive lead exceeds the maximum current that the fuse can conduct without burning out or melting, as described above. Furthermore, for fuses having thicknesses of the about 0.01 to about 0.2 ⁇ m, a preferred width is from about 0.1 to about 1 mm, and more preferably from 0.1 to 0.3 mm (0.005 to 0.01 2 inch); and a preferred length is from about 0.1 to 5 mm, and more preferably, from 0.5 to 2.5 mm (0-02 to 0.1 inch).
  • the resistive fuse element 50 can be embedded in the insulator 30 surrounding the electrodes 25, or can be constructed as a separate insulated fuse assembly, as described in more detail below.
  • the electrical power bus 40 is embedded in insulator and can comprise an electrical conductor wire or layer spaced apart from the electrodes 25.
  • the electrical power bus 40 has output terminals 45 or junctions that provide electrical voltage to the electrodes 25.
  • the output terminals 45 of the electrical power bus 40 can be positioned below the electrodes 25, as shown in Figure 5, or positioned coplanar to and between the electrodes 25, as shown in Figure 6.
  • the output terminals 45 and the electrical power bus 40 can be located in a different structure, or remote from the chuck 20, as shown in Figure 7.
  • the chuck is shaped as a laminate composed of insulator 30 and having the electrodes 25, electrical power bus 40, and fuses 50 embedded therein.
  • a composite layer is formed by (i) selecting a first insulator support layer 30a; (ii) depositing a resistor layer 200 on the first insulator layer 30a to form the fuses therefrom; and (iii) depositing a patterned electrical conductor layer 205 over the resistor layer 200, to form the electrodes 25 and power bus 40.
  • the support layer 30a can comprise commercially available polymer films such as "KAPTON,” a polyimide film manufactured by DuPont de Nemours Co., in Wilmington, Delaware; “APIQUEO” fabricated by Kanegafuchi Chemical Indus., Japan; “UPILEX” manufactured by Ube Indus. Ltd., Japan; “NITOMID” fabricated by Nitto Electric Indus. Co. Ltd., Japan; or “SUPERIOR FILM” fabricated by Mitsubishi Plastics Indus. Ltd., Japan.
  • KAPTON a polyimide film manufactured by DuPont de Nemours Co., in Wilmington, Delaware
  • APIQUEO fabricated by Kanegafuchi Chemical Indus., Japan
  • UPILEX manufactured by Ube Indus. Ltd., Japan
  • NITOMID Nitto Electric Indus. Co. Ltd.
  • SUPERIOR FILM fabricated by Mitsubishi Plastics Indus. Ltd., Japan.
  • the resistor layer 200 can be formed by depositing a thin layer of a conductive or resistive material, preferably, nickel-phosphorous, nickel- chromium, chromium, or tin, on the first insulator layer 30a, as shown in Figure 9a.
  • the thickness of the resistor layer is from about 0.005 to about 1 ⁇ m.
  • a first patterned resist layer 215 is formed on the resistor layer 200, the resist layer 215 being patterned to the electrode 25 and electrical power bus 40 configurations, as shown in Figure 9b.
  • the resist can comprise hard mask or photoresist materials, such as "RISTON" fabricated by DuPont de Nemours Chemical Co., Wilmington, Delaware.
  • the electrical conductor layer 205 can also be deposited by sputtering a copper layer on the insulator film with a chromium oxide bonding layer therebetween.
  • the vapor deposition method is advantageous by allowing deposition of a thin electrode layer that has a thickness of less than about 500 nm, and more preferably less than 250 nm.
  • residual photoresist is stripped from the composite layer using a conventional acid or oxygen plasma stripping process to obtain the structure shown in Figure 9c.
  • a second patterned resist layer 220 is formed on the resistor layer 200, as shown in Figure 9d, the patterned resist features corresponding to the desired fuse 50 configuration. Exposed portions of the resistor layer 200 are then etched using conventional etching methods to form resistive fuses 50 connecting the electrodes 25 to the electrical power bus 40, as shown in Figure 9e.
  • Conventional wet or dry chemical etching methods can be used to etch the resistor layer 200.
  • a suitable wet chemical etching method comprises immersing the composite film into an etchant such as ferric chloride, sodium persulfate, or an acid or base, until the film is etched. Suitable dry etching processes are described in Silicon Processing. Chapter 16, supra, which is incorporated herein by reference.
  • a cover layer 30b is formed with hollow cavities 55a, 55b sized and configured to be disposed over the fuses 50 as shown in Figure 9f.
  • the cover layer 30b can comprise one or more layers of adhesive and/or insulation.
  • the hollow cavities in the cover layer 30b can be formed by machining, stamping, casting or a photolithography and etching process similar to that described above form the fuses 50.
  • the electrical connector 90 of the electrostatic chuck 20 is typically formed as an integral extension of the electrodes 25 by stamping, punching, or pressing out the electrical connector 90 from the laminate. Preferably, the electrical connector 90 is cut out so that the electrical lead 95 and contact 100 are disposed within one of the grooves 145.
  • the insulator 30 on the electrical contact is removed to expose the underlying electrically conductor layer 205 which forms the electrical contact 100.
  • the electrical lead 95 and electrical contact 100 are inserted through the bore in the base 80 so that the electrical contact 100 is disposed below the base 80 as shown in Figure 2.
  • the chuck laminate structure is adhered to the base 80 of the chuck 20, using conventional pressure or temperature sensitive adhesives, such as polyimides.
  • a top view of the resultant chuck 20 is shown in Figures 10a and 10b.
  • a commercially available composite multi-layer film comprising a first insulator layer 30 having thereon (i) a resistor layer 200, and (ii) an electrical conductor layer 205, can also be used.
  • a suitable multilayer film comprises a "R/FLEX 1 100" film fabricated by Rogers Corporation, Chandler, Arizona, comprising a 1 25 ⁇ m thick polyimide insulator layer 30a; a 0.1 ⁇ m resistor layer 200; and a 25 ⁇ m electrically conductive copper layer 205.
  • Another suitable multilayer film is "81 G3365" film fabricated by IBM Corporation, of Endicott, New York.
  • the resistor layer 200 is etched or milled to form the resistive fuses 50, and the copper layer is etched or milled to form the electrodes 25, the integral electrical connector 90, and electrical power bus 40, as described above. Thereafter, a second insulator layer 30b is adhered over the etched laminate structure to form the chuck 20.
  • the electrostatic chuck 20 having features of the present invention has several advantages.
  • the chuck is resistant to failures occurring from erosion or puncture of the insulator 30 on the electrodes 25.
  • the current flowing through a fuse 50 as a result of the electrostatic discharge through an exposed electrode 25 causes the fuse 50 to electrically disconnect the exposed electrode 25 in a relatively short time. This allows the remaining insulated electrodes 25 (or electrode segments) to continue to operate and electrostatically hold the substrate 35.
  • each fuse 50 and electrode 25 assembly of the present invention functions as an independently operated micro chuck.
  • the electrostatic chuck 20 of the present invention resists catastrophic failure even when insulator 30 covering an electrode 25 is punctured or eroded.
  • the enclosed cavities 55 surrounding the fuses reduce the possibility of burn-out residue or melt residue from the fuses to form conducting pathways or linkages between the electrode 25 and the output terminal of the power bus.
  • the present invention provides a system for early detection, and optional counting, of the number of electrode 25 failures using a current detector 175, and optional counter 180, electrically connected in series to the electrical power bus 40 to detect flow of current through the fuses 50.
  • Monitoring of the current surges through the current detector 175 provides an indication of the number of electrodes 25 exposed to the process environment or the number of disconnected electrodes 25.
  • the current detector 175 and counter 180 can be used to provide early warning of the failure of one or more electrodes 25, to allow replacement of the chuck before the chuck catastrophically fails during a processing cycle.
  • the following comparative examples show the advantages of a failure resistant electrostatic chuck 20 of the present invention in which a fuse 50 was enclosed in a hollow cavity 55 in the insulator 30.
  • the fuse 50 was made of a 0.2 ⁇ m thick nickel-phosphorous, and the length of the fuse were varied from about 0.3 to about 3 mm (- 0.01 to 0.1 inches).
  • the copper electrode 25 and power bus 40 structure were fabricated by a subtractive etch process from a copper layer 18 ⁇ m thick deposited on a 50 ⁇ m thick supporting dielectric layer.
  • the power bus 40 was connected to one terminal of a DC power supply while the copper electrode 25 was electrically contacted with a needle probe that pierced the supporting dielectric layer 30a and was connected to the other terminal of the power supply.
  • the first example demonstrates the effect of continued application of DC voltage on a fuse structure in which the fuse 50 was not enclosed in a hollow cavity 55.
  • the electrode and fuse patterns were covered with a single, solid, polyimide layer about 50 ⁇ m thick.
  • potentials of between 1000 and 2000 volts DC were applied between the power bus 40 and copper electrode 25 (to replicate the discharge of a plasma in a plasma process) a large current flowed through the fuse 50.
  • the large current load caused the fuse 50 to burn-out.
  • an electrostatic chuck 20 was fabricated according to Figure 3a and 3c.
  • the fuse 50 elements, electrodes 25 and polyimide dielectrics were identical to those of the preceding example with the following exception.
  • the cover layer was made of two 25 ⁇ m thick polyimide layers 30b-c, and of these, the polyimide layer closest to the fuse had a hole having a diameter about the same size as the fuse length.
  • the fuse 50 was made of nickel-phosphorous and comprised a thickness of about 0.2 ⁇ m (- 0.01 mils), and a length of about 1 mm ( ⁇ * 40 mils).
  • the shape and size of the fuse was selected to electrically disconnect the electrode from the output terminal of the power bus when a current of at least about 10 mA flows through the fuse.
  • the copper electrode 25 and power bus 40 structure were fabricated by a subtractive etch process from a thin sheet of multilayer foil 195 having a thickness of from about 1 .8 to about 1 85 ⁇ m ( ⁇ * 0.07 to 7.1 mil) joined to a supporting layer 30a having a thickness of from about 5 to about 500 ⁇ m ( 0.2 to 20 mil).
  • the power bus 40 was connected to one terminal of a DC power supply while the copper electrode 25 was electrically contacted with a needle probe that pierced the supporting dielectric layer 30a and was connected to the other terminal of the power supply.
  • the electrostatic chuck 20 comprises a plurality of insulating layers 30a-c and adhesive layers 220a, b.
  • the insulator 30 comprises a support layer 30a which supports the electrodes 25, power bus 40, and fuses 50.
  • a cover layer 30b comprising a plurality of hollow cavities 55 is bonded over the electrodes 25, power bus 40, output terminals 45, and fuses 50, by an adhesive layer 220a.
  • a second adhesive layer 220b bonds a third insulating layer 30c to the cover layer 30b.
  • a laminate is formed of a support layer 30a, an electrical conductor layer 205, and a resistor layer 200.
  • the laminate shown in Figure 1 5a, is formed by selecting a support layer 30a; placing a multilayer foil 195 comprising a resistor layer 200 and an electrical conductor layer 205 on the support layer 30a; and applying pressure and heat to join the resistor layer 200 and the electrical conductor layer 205 to the support layer 30a.
  • the pressure is applied using a pressure forming apparatus, such as an autoclave, platen press, or isostatic press.
  • a pressure of from about 700 to about 2000 kPa, and a temperature of from about 100 to about 400°C is applied to the assembled layers for about 60 minutes.
  • the support layer 30a can comprise commercially available polymer films such as described above.
  • a resist layer 215 is deposited on the foil 195 and patterned to correspond to the configurations of the electrodes 25 and electrical power bus 40, as shown in Figure 1 5b.
  • a wet etching process is used to partially remove the electrical conductor layer 205 between the resist coated portions to form the electrodes 25 and the electrical power bus 40.
  • the resistor layer 200 is partially removed in a second etch step 245.
  • the remnant resist is removed in a stripping step 250 to clean the exposed surface of the electrical conductor layer 205 and the support layer 30a, as shown in Figure 1 5c.
  • the exposed surface of the electrical conductor layer 205 can then be treated in an oxide forming step 255 to form a brown oxide layer 275.
  • the brown oxide layer 275 is desirable to enhance the adhesion of the overlying layers to the electrical conductor layer 205.
  • a cover layer 30b having cavities 55 formed therein is joined to the support layer 30a in a second lamination step 260 using the adhesion layer 220a and the lamination process described above.
  • the hollow cavities in the cover layer 30b can be formed by machining, stamping, casting, photolithography, or etching processes.
  • the underlying foil 195 exposed by the cavities 55 is then etched in a wet etch step 265 to form resistive fuses 50 having the desired size and shape, and which connect the electrodes 25 to the electrical power bus 40, as shown in Figure 1 5e.

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Abstract

Ce mandrin électrostatique (20), résistant aux défaillances et destiné à maintenir un substrat (35) lors du traitement de celui-ci, comprend une ou plusieurs électrodes (25) recouvertes d'un isolant (30) et qui peuvent maintenir un substrat (25) de manière électrostatique lorsqu'on leur applique une tension. Un bus d'alimentation électrique (40) comprend une ou plusieurs bornes de sortie (45), lesquelles apportent la tension aux électrodes (25). Les fusibles (50) sont placés dans des cavités creuses (55) de l'isolant (30) et ils connectent électriquement les électrodes (25) en série, aux bornes de sortie (45) du bus d'alimentation (40). Chaque fusible (50) peut déconnecter électriquement une électrode (25) à partir d'une borne de sortie (45), lorsque l'isolant (30) couvrant l'électrode (25) se perfore et expose l'électrode (25) à un environnement de processus au plasma, provoquant ainsi l'écoulement d'une décharge de courant de plasma à travers le fusible (50).
PCT/US1998/023834 1997-11-06 1998-11-06 Mandrin electrostatique a plusieurs electrodes, dote de fusibles dans des cavites creuses WO1999025007A1 (fr)

Priority Applications (1)

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JP2000519911A JP2001523042A (ja) 1997-11-06 1998-11-06 中空キャビティ内にヒューズを有する多電極静電チャック

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US96512197A 1997-11-06 1997-11-06
US08/965,121 1997-11-06

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000028588A1 (fr) * 1998-11-06 2000-05-18 Applied Materials Inc Mandrin electrostatique a plusieurs electrodes, dote de fusibles dans des cavites creuses
EP1852907A1 (fr) * 1999-05-25 2007-11-07 Toto Ltd. Mandrin électrostatique et appareil de traitement

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004233672A (ja) * 2003-01-30 2004-08-19 Shin-Etsu Engineering Co Ltd 基板貼り合わせ装置
DE102008013031B4 (de) * 2008-03-07 2019-07-25 Osram Oled Gmbh Optoelektronisches Bauelement
JP7184712B2 (ja) * 2019-07-30 2022-12-06 日本特殊陶業株式会社 半導体製造装置用セラミック部品、および静電チャック

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03145151A (ja) * 1989-10-31 1991-06-20 Toshiba Corp 静電チャック装置
EP0805487A2 (fr) * 1996-05-02 1997-11-05 Applied Materials, Inc. Mandrin électrostatique multi-électrodes avec fusibles

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03145151A (ja) * 1989-10-31 1991-06-20 Toshiba Corp 静電チャック装置
EP0805487A2 (fr) * 1996-05-02 1997-11-05 Applied Materials, Inc. Mandrin électrostatique multi-électrodes avec fusibles

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 015, no. 367 (E - 1112) 17 September 1991 (1991-09-17) *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000028588A1 (fr) * 1998-11-06 2000-05-18 Applied Materials Inc Mandrin electrostatique a plusieurs electrodes, dote de fusibles dans des cavites creuses
EP1852907A1 (fr) * 1999-05-25 2007-11-07 Toto Ltd. Mandrin électrostatique et appareil de traitement

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