WO1999017382A1 - Procede de fabrication d'un dispositif a effet josephson coplanaire - Google Patents

Procede de fabrication d'un dispositif a effet josephson coplanaire Download PDF

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Publication number
WO1999017382A1
WO1999017382A1 PCT/JP1998/004379 JP9804379W WO9917382A1 WO 1999017382 A1 WO1999017382 A1 WO 1999017382A1 JP 9804379 W JP9804379 W JP 9804379W WO 9917382 A1 WO9917382 A1 WO 9917382A1
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WO
WIPO (PCT)
Prior art keywords
junction
josephson
ions
ion beam
oxide superconductor
Prior art date
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PCT/JP1998/004379
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English (en)
Japanese (ja)
Inventor
Yoichi Okabe
Yoshihisa Soutome
Original Assignee
Yoichi Okabe
Yoshihisa Soutome
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yoichi Okabe, Yoshihisa Soutome filed Critical Yoichi Okabe
Priority to AU91876/98A priority Critical patent/AU9187698A/en
Publication of WO1999017382A1 publication Critical patent/WO1999017382A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0884—Treatment of superconductor layers by irradiation, e.g. ion-beam, electron-beam, laser beam or X-rays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices
    • H10N60/0941—Manufacture or treatment of Josephson-effect devices comprising high-Tc ceramic materials

Definitions

  • the present invention relates to a Josephson device, and more particularly, to a Josephson device using an oxide high-temperature superconductor having a coplanar structure.
  • a Josephson device using an oxide high-temperature superconductor is expected to operate at a higher temperature than a Josephson device using a conventional metal-based superconductor, but at a liquid nitrogen temperature of 77 K (Kelvin),
  • the IcRn product (Ic: critical current value of the device, Rn: resistance in the normal conduction state of the device), which is a measure of the magnitude of the signal output of the device, is smaller and larger than the value of the metal superconductor, Josephson device.
  • the challenge is to create a Josephson device with a product.
  • a superconductor film is grown on a bicrystal substrate in which two substrates for superconducting thin films with different crystal orientations are bonded together, Bicrystal bonding ( Figure 2), which uses weakly conductive grain boundaries as a junction, or etching a superconducting thin film to form a flat slope, on which a barrier material such as metal and a superconducting thin film are deposited in that order There is a ramp edge type junction (Fig. 3).
  • the arrangement of elements is limited, and it is difficult to create a complicated circuit.
  • the arrangement of elements for the ramp-edge type junction it is necessary to deposit and etch four thin films to form the junction, which complicates the process steps and reduces the thickness of the barrier layer.
  • control was very difficult.
  • the superconductivity of the oxide high-temperature superconductor thin film is sensitive to oxygen content, crystallinity deterioration, impurities, etc. in the thin film, and may be affected by damage to the substrate surface or ions injected into the thin film.
  • the ions implanted into the superconductor film diffuse laterally in the film.
  • the width (junction length) of the weak coupling region is increased. Therefore, conventionally, it has been difficult to control the bonding length. Since the junction length affects the amount of Ic, it is desirable to be able to precisely control the width of the weakly bonded portion.
  • the ions implanted into the superconductor film diffuse laterally in the film, resulting in a non-uniform concentration distribution, with the highest concentration at the implantation center, and a gradual decrease in concentration as one moves away from it.
  • the so-called Gaussian distribution The spread of ions in the lateral direction substantially increases the junction length and blurs the boundary between the superconducting and weakly coupled parts, making precise control of the junction length impossible.
  • an object of the present invention is to provide a method for manufacturing a Josephson element in which the junction width can be easily controlled and a stable and uniform junction can be obtained.
  • Another object of the present invention is to provide a method of manufacturing a Josephson device, which has a high degree of freedom in a manufacturing process and can form a joint at an arbitrary position.
  • the inventor of the present invention has proposed a method of forming an oxide superconducting material on a substrate and then penetrating an oxide superconducting material film at a portion where a Josephson junction is to be formed.
  • the invention according to claim 1 irradiates a superconducting material layer with an ion beam, It is characterized in that a region having no superconductivity or a region having superconductivity weaker than the surroundings is provided in the conductive material layer.
  • the invention according to claim 2 irradiates an ion beam having a speed that penetrates the oxide superconductor layer, and the region where the oxide superconducting material layer has no superconductivity or the superconductivity is weaker than the surroundings It is characterized in that an area is provided.
  • the method for manufacturing a Josephson element in the method for manufacturing a Josephson element, a portion of the oxide superconductor layer where a Josephson junction is to be provided is irradiated with a focused ion beam, and the oxide superconductor at the portion is deteriorated.
  • the method includes a step of providing a region having no superconductivity or a region having superconductivity weaker than the surroundings.
  • the invention according to claim 4 is a method for manufacturing a Josephson device, comprising: a step of growing a layer of an oxide superconductor on a substrate for a superconducting thin film; Forming and irradiating a focused ion beam to a portion of the patterned oxide superconductor layer where a Josephson junction is to be formed, thereby transforming the oxide superconductor layer to improve the superconductivity. Providing a region having no superconductivity or a region having superconductivity weaker than the surroundings.
  • the invention according to claim 5 is characterized in that, in the invention according to claim 3 or 4, the ions constituting the focused ion beam have velocity energy enough to penetrate the oxide superconductor layer.
  • the ion beam or the focused ion beam is mainly made of beryllium ions.
  • FIG. 1 is a diagram showing a Josephson device having a co-planar structure.
  • FIG. 2 is a diagram showing a Josephson device having a bicrystal junction.
  • FIG. 3 is a diagram showing a Josephson device having a lampage type junction.
  • FIG. 4 is a view showing one step of a method for manufacturing a Josephson device according to the present invention.
  • 1 indicates a substrate for a superconducting thin film
  • 2 indicates an oxide superconductor thin film.
  • FIG. 5 is a view showing one step of a method for manufacturing a Josephson device according to the present invention.
  • 1 indicates a substrate for a superconducting thin film
  • 2 indicates an oxide superconductor thin film.
  • FIG. 6 is a diagram showing a locus of heavy ions implanted in the YBCO film.
  • FIG. 7 is a diagram showing the locus of light ions implanted in the YBCO film.
  • FIG. 8 is a view showing one step of a method for manufacturing a Josephson device according to the present invention.
  • FIG. 9 is a view showing one step of a method for manufacturing a Josephson device according to the present invention.
  • FIG. 10 is a view showing one step of a method for manufacturing a Josephson device according to the present invention.
  • 1 indicates a substrate for a superconducting thin film
  • 2 indicates an oxide superconductor thin film
  • 3 indicates a region having no superconductivity or weaker than the surroundings (weak coupling region).
  • FIG. 11 is a diagram showing current-voltage characteristics of a Josephson junction manufactured by the method of the present invention.
  • FIG. 12 is a diagram showing current-voltage characteristics of a Josephson junction manufactured by the method of the present invention.
  • FIG. 13 is a diagram showing microwave characteristics of a Josephson junction manufactured by the method of the present invention.
  • FIG. 14 is a diagram showing temperature characteristics of a Josephson junction manufactured by the method of the present invention.
  • FIG. 15 is a diagram showing magnetic field characteristics of a Josephson junction manufactured by the method of the present invention.
  • FIG. 16 is a diagram showing magnetic field characteristics of a Josephson junction manufactured by the method of the present invention.
  • FIG. 17 is a diagram showing a change in the temperature characteristic of the critical current value of the Josephson junction manufactured by the method of the present invention depending on the ion irradiation dose.
  • FIGS. 4 to 9 show the steps of manufacturing the Josephson device according to the present invention.
  • a substrate 1 for superconducting thin film for growing an oxide superconductor thin film is prepared.
  • the superconducting carrying film substrate generally MgO substrate is used, but other materials or Ranaru substrate, for example, S rT I_ ⁇ 3, YS Z, LaA10 3, NdGaO, L a S r G a 4, S i May be.
  • the oxide superconductor used in the present invention is preferably YBazCiiaO ?, but other so-called oxide high-temperature superconductors, namely Bi 2 S T 1 2 B a 2Ca2Cu 3 0.os T lBa 2 Ca 4 Cu 4 0 or the like.
  • oxide high-temperature superconductors namely Bi 2 S T 1 2 B a 2Ca2Cu 3 0.os T lBa 2 Ca 4 Cu 4 0 or the like.
  • the thickness of the grown oxide superconductor is preferably about 100 nm to about 300 nm, but is not particularly limited to a certain value.
  • the oxide superconductor thin film on the substrate is etched to form the circuit pattern of the Josephson device, typically a device pattern with a bridge structure (Fig. 5). This is usually done by a common photolithography technique.
  • the patterning of the oxide superconductor thin film can be performed by a known method. However, this circuit pattern formation step can be performed after the later described Josephson junction formation step. This will be described in detail later.
  • the formation of the Josephson junction by the conventional ion irradiation method involves:
  • Relatively heavy ions or electron beams such as A s, ⁇ and S i were used.
  • the mechanism by which these ions create a weak junction is not well understood, but generally the elements that make up the superconducting material are replaced by the implanted ions, or the formation of lattice defects, It is thought to be due to amorphization and local annealing.
  • the problems associated with the formation of weak bonds by this conventional method are that, as already explained, it is difficult to control the bond width (joint length) of the weak bond, or it is not possible to obtain a uniform injection distribution.
  • ions are implanted from the left side of the figure, and the horizontal axis shows the depth of implantation. The more to the right, the deeper the injection.
  • Velocity energy of each ion is 1 0 0 K e V, Note Quantity of ions 2 0 0, the target was set boss to YB a 2 C u 3 ⁇ 7 (density 6. 5 4 g / cm 3 ) .
  • the penetration depth of ions and the diffusion distance in the lateral direction are almost the same, and the implantation depth is about 40 nm at the center and about 80 nm at the deepest.
  • the ions are implanted very deeply, and the center of the implantation depth is estimated to be 230 nm.
  • the implanted ions go almost straight in the shallow part, and there is little lateral diffusion but deeper. Later, the diffusion in the lateral direction increases, and a lateral extension with a radius of about 40 nm is calculated at the center of the implantation depth.
  • FIG. 8 is a cross-sectional view showing a step of implanting ions into a YBa 2 Cu 3 ⁇ 7 thin film and a substrate using a focused ion beam.
  • the focused ion beam is applied to the portion of the patterned oxide superconductor thin film where the junction is to be formed, damaging the thin film and forming a weakly bonded portion to form a junction.
  • Be 2 + ions are used for the focused ion beam.
  • the invention is not restricted to B e 2 + ions, Be + ions, or other relatively light ions.
  • the acceleration voltage 100 KV, beam current 4 pA, after only B e 2 + ions were selected by the use of an alloy ion beam Au-S i-Be of E x B Masufiru evening, the B e 2 + ions
  • the beam is converged to a beam diameter of about 50 nm using an electromagnetic lens.
  • the conditions for ion beam irradiation should be changed depending on the type of ions used, the type and thickness of the oxide superconductor thin film to be used as a target, and are limited to the above settings. is not.
  • the accelerating voltage may be within a range where the irradiated ions damage and substantially penetrate the oxide superconductor thin film to be a target, and in the case of Be 2 + ions, it is from about 60 kV. A range of 120 kV is considered practical.
  • B e 2 + ions are implanted into the substrate through the YB a 2 Cii3_rei 7 films.
  • Be ions diffuse in the substrate Becomes, the diffusion in YB a 2 Cu 3 ⁇ 7 in the thin film is small. Therefore, it is considered as a region that YBa 2 Cu 3 0 7 thin film B e 2 + ions damage is substantially equal to the width of the focused ion beam.
  • the Be 2 + ions implanted into the substrate will remain in the substrate thereafter, but this will have little effect on the bonding characteristics. This is because the formation of the weak junction according to the present invention is solely due to damage to the superconducting material during the passage of ions.
  • FIG. 9 is a perspective view showing an example of the step of forming the weak junction.
  • YB a 2 C u 3 0 7 thin film patterned on a substrate is shown, pattern the H-type is the one unit of Josephson device.
  • the constricted part (horizontal bar of H) in the figure is the place where a Josephson junction called a bridge should be formed.
  • the focused ion beam is deflected using an electromagnetic lens or the like, and is scanned across the constricted part as shown in the figure.
  • B e 2 + ions into a convergent YB a 2 Cu 3 0 7 thin film portion irradiated with the ion beam is damaged.
  • ions can be penetrated to an arbitrary position of the thin film deposited on the substrate, and a junction can be formed.
  • the positioning of the irradiation spot of the focused ion beam is generally performed by a scanning technique using a mechanical stage and / or a lens, but it is now possible to specify the irradiation spot while viewing the pattern with an electron microscope. These techniques are already known and will not be described in detail. When multiple devices are to be formed on the same substrate, positioning is performed for each device and focused ion irradiation is repeated. Also, the element By changing the ion irradiation amount for each device, the amount of damage to the thin film can be changed, and the junction Ic can be controlled for each device.
  • FIG. 10 is a model diagram of a cross section of the completed Josephson device.
  • electrodes (not shown) are added to the superconductor thin film on both sides by a vacuum deposition method or the like, or connected to another element by wiring on the substrate. It is understood that a weakly-coupled portion, that is, a Josephson junction, is formed in the oxide superconductor film deposited on the substrate by irradiation of the focused ion beam, thereby obtaining a Josephson device having a coplanar structure.
  • a weakly-coupled portion that is, a Josephson junction
  • the method for manufacturing the Josephson device according to the present invention is not limited to the above-described example.
  • the oxide superconducting thin film was patterned before the formation of the weak coupling portion.
  • the weak coupling portion was first formed on the oxide superconducting thin film deposited on the substrate. It can be formed and then patterned. In this case, a focused ion beam is scanned at a predetermined position on the thin film to form a weakly-bonded portion in advance, and the weakly-bonded portion is included in the patterning process by a photolithography technique.
  • the Josephson device is formed by patterning the oxide superconducting thin film.
  • a method of controlling the length of the junction there is a method of changing the method of scanning the focused ion beam in addition to a method of changing the irradiation amount of ions.
  • a weakly-bonded portion that is, a junction, having an arbitrary width can be formed by scanning the bridge portion with a focused ion beam so that the bridge portion does not overlap a plurality of times and with a small overlap.
  • the Josephson device that was measured was first placed on a MgO substrate for about 100 nm.
  • FIG. 11 shows the current-voltage characteristics of the Josephson junction at the dose of 5 ⁇ 10 15 / cm 2 .
  • the measurement temperature is 40K (unit: Kelvin)
  • the X-axis represents 0.1 [mV / div]
  • the Y-axis represents 0.1 [mA / div].
  • FIG. 12 shows the current-voltage characteristics when the irradiation amount is 9 ⁇ 10 15 particles / cm 2 .
  • the measured temperature is 6.5 K
  • the X-axis represents 0.2 [mV / div]
  • the Y-axis represents 20 [ ⁇ A / div].
  • the current-voltage characteristics of this Josephson device show the characteristics of a Flux-flow device at low temperatures, but change to those represented by the RSJ model as the temperature increases.
  • the change starts at a lower temperature as the irradiation dose is larger, and as shown in FIG. 12, at an irradiation dose of 9 ⁇ 10 15 particles / cm 2 , it shows RSJ-like characteristics even at a low temperature of 10 K or less.
  • the IcRn product slightly changed depending on the irradiation dose, a value of 0.5 mV to 2.2 mV was obtained at 6.3 K.
  • FIG. 13 shows the microwave characteristics when the irradiation amount is 5 10 15 pieces / cm 2 .
  • the measurement temperature is 45K
  • the frequency is 8.9GHz
  • the X axis is 0.02 [mV / div]
  • the Y axis is 50 [A / div].
  • Ic critical current
  • Rn junction resistance
  • the junction resistance is a resistance value when a microwave is applied to set the critical current value of the junction to zero.
  • the critical current increases exponentially near the junction Tc with decreasing temperature, and then increases linearly.
  • the junction resistance is almost constant below the junction Tc, gradually increases above the junction Tc, and increases rapidly near the thin film Tc. This sharp increase is due to the normal conduction transition of the thin film itself. It is. Since the junction resistance does not change below the junction TC, YBCO completely loses superconductivity due to the damage caused by ion collision and exhibits metallic properties, indicating that an SNS-like junction is formed. Similar trends are shown for other irradiation doses.
  • FIG. 5 is a 6 0 K
  • Y axis indicates 40 [ ⁇ A / div]
  • the measured temperature in Figure 16 is 30 K
  • the X axis is 0.8 [Gauss / div]
  • the Y axis is 250 [ A / div]
  • the degree of modulation of the critical current value due to the magnetic field increases as the temperature approaches the junction temperature Tc, and a degree of modulation of about 10% at 4.2K and a maximum of 80% is obtained.
  • Tc junction temperature
  • a metal film such as Au is deposited on the oxide superconductor thin film to form an extremely fine pattern.
  • a metal film such as Au is deposited on the oxide superconductor thin film to form an extremely fine pattern.
  • Example: Groove of about 10 ⁇ m Patterned by a photolithography technique using an electron beam or the like that can form a metal protective layer, and then using a normal ion beam that is not a focused ion beam It is possible to perform ion implantation in the same manner as in the above embodiment.
  • the metal protective layer is Industrial applicability
  • the junction length can be easily controlled, and a uniform junction can be formed.
  • the method for manufacturing a Josephson device of the present invention can form a junction at an arbitrary position and can form a junction before and after patterning of the oxide superconductor thin film. It has the advantage of a high degree of freedom.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un dispositif à effet Josephson coplanaire consistant à implanter des ions présentant une masse relativement plus légère que celle des ions utilisés dans le cadre d'une implantation ionique classique dans une zone où l'on souhaite former une jonction Josephson, à une vitesse suffisamment importante pour que les ions pénètrent à travers un film de matériau supraconducteur renfermant un oxyde formé sur le substrat. On a ainsi la possibilité d'obtenir un niveau de contrôle élevé quant à la longueur de la jonction, une jonction uniforme, et une grande liberté dans le processus.
PCT/JP1998/004379 1997-09-30 1998-09-29 Procede de fabrication d'un dispositif a effet josephson coplanaire WO1999017382A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU91876/98A AU9187698A (en) 1997-09-30 1998-09-29 Method for manufacturing coplanar josephson device

Applications Claiming Priority (2)

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JP9/282701 1997-09-30
JP28270197A JP2002134803A (ja) 1997-09-30 1997-09-30 共プレーナ型ジョセフソン素子の製造方法

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017175155A (ja) * 2011-03-30 2017-09-28 アンバチュア インコーポレイテッド 非常に低い抵抗材料で形成された、電気的デバイス、機械的デバイス、コンピュータデバイス、および／または、他のデバイス
CN115332433A (zh) * 2022-08-26 2022-11-11 天津大学 一种平面约瑟夫森结的制备方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6489573A (en) * 1987-09-30 1989-04-04 Nec Corp Pattern formation of superconductor circuit
JPH01114084A (ja) * 1987-10-28 1989-05-02 Hitachi Ltd 超電導パターン形成方法
JPH01199489A (ja) * 1988-02-04 1989-08-10 Canon Inc 超伝導回路の作製方法
JPH02137785A (ja) * 1988-11-18 1990-05-28 Sanyo Electric Co Ltd 酸化物超電導体の加工方法
JPH02154485A (ja) * 1988-12-06 1990-06-13 Nec Corp ジヨセフソン素子
JPH02186683A (ja) * 1988-09-14 1990-07-20 Hitachi Ltd 弱結合ジョセフソン接合の形成法及びこれを用いた超電導素子
JPH04132279A (ja) * 1990-09-21 1992-05-06 Nippondenso Co Ltd 超伝導薄膜素子の製造方法
JPH05102545A (ja) * 1990-06-29 1993-04-23 Sanyo Electric Co Ltd 超電導薄膜の加工方法及びジヨセフソン接合素子の製造方法
JPH05152625A (ja) * 1991-11-27 1993-06-18 Nippondenso Co Ltd 超電導ジヨセフソン接合素子

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6489573A (en) * 1987-09-30 1989-04-04 Nec Corp Pattern formation of superconductor circuit
JPH01114084A (ja) * 1987-10-28 1989-05-02 Hitachi Ltd 超電導パターン形成方法
JPH01199489A (ja) * 1988-02-04 1989-08-10 Canon Inc 超伝導回路の作製方法
JPH02186683A (ja) * 1988-09-14 1990-07-20 Hitachi Ltd 弱結合ジョセフソン接合の形成法及びこれを用いた超電導素子
JPH02137785A (ja) * 1988-11-18 1990-05-28 Sanyo Electric Co Ltd 酸化物超電導体の加工方法
JPH02154485A (ja) * 1988-12-06 1990-06-13 Nec Corp ジヨセフソン素子
JPH05102545A (ja) * 1990-06-29 1993-04-23 Sanyo Electric Co Ltd 超電導薄膜の加工方法及びジヨセフソン接合素子の製造方法
JPH04132279A (ja) * 1990-09-21 1992-05-06 Nippondenso Co Ltd 超伝導薄膜素子の製造方法
JPH05152625A (ja) * 1991-11-27 1993-06-18 Nippondenso Co Ltd 超電導ジヨセフソン接合素子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017175155A (ja) * 2011-03-30 2017-09-28 アンバチュア インコーポレイテッド 非常に低い抵抗材料で形成された、電気的デバイス、機械的デバイス、コンピュータデバイス、および／または、他のデバイス
CN115332433A (zh) * 2022-08-26 2022-11-11 天津大学 一种平面约瑟夫森结的制备方法

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AU9187698A (en) 1999-04-23

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