WO1998052101B1 - Gray scale mask and depth pattern transfer technique using inorganic chalcogenide glass - Google Patents
Gray scale mask and depth pattern transfer technique using inorganic chalcogenide glassInfo
- Publication number
- WO1998052101B1 WO1998052101B1 PCT/US1998/009373 US9809373W WO9852101B1 WO 1998052101 B1 WO1998052101 B1 WO 1998052101B1 US 9809373 W US9809373 W US 9809373W WO 9852101 B1 WO9852101 B1 WO 9852101B1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- chalcogenide glass
- gray scale
- substrate
- resist
- Prior art date
Links
- 239000005387 chalcogenide glass Substances 0.000 title claims abstract 35
- 238000000034 method Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims abstract 18
- 229910052709 silver Inorganic materials 0.000 claims abstract 10
- 239000004332 silver Substances 0.000 claims abstract 10
- 238000005530 etching Methods 0.000 claims abstract 8
- 230000000051 modifying Effects 0.000 claims abstract 6
- BQCADISMDOOEFD-UHFFFAOYSA-N silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 9
- 150000004770 chalcogenides Chemical class 0.000 claims 6
- 238000000151 deposition Methods 0.000 claims 5
- 230000001678 irradiating Effects 0.000 claims 4
- 230000003278 mimic Effects 0.000 claims 1
- -1 selenium germanium Chemical compound 0.000 abstract 5
- 229920002120 photoresistant polymer Polymers 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 1
Abstract
A method of producing a high resolution expanded analog gray scale mask is described. Using an inorganic chalcogenide glass, such as a selenium germanium, coated with a thin layer of silver, a gray scale mask may be produced with accurate control of the size, uniformity and variance of the pixels. The selenium germanium glass is composed of column structures arranged perpendicularly to the substrate giving a possible edge precision of 100 Å. The column structures also prevent undercutting during the etching process, thus permitting pixels to be placed close together. Accordingly, selenium germanium may be used as a high resolution gray scale mask with an expanded analog gray scale. The gray scale mask may be used to impress information as a modulated thickness on a selenium germanium photoresist layer on an inorganic substrate. The selenium germanium photoresist layer may then transfer the gray scale to the substrate.
Claims
AMENDED CLAIMS
[received by the International Bureau on 17 November 1998 (17.11.98); original claims 12-26 replaced by amended claims 12-27 (4 pages)] chalcogenide glass resist and into said second substrate .
11. A method comprising: producing a gray scale mask, said step of producing comprising: depositing a chalcogenide glass on a first substrate; irradiating said chalcogenide glass in a gray scale pattern; and etching said chalcogenide glass until the irradiated chalcogenide glass in said gray scale pattern is removed, leaving a layer of chalcogenide glass on said first substrate representing said gray scale pattern.
12. The method of Claim 11 further comprising: transferring a depth pattern, said step of transferring comprising: depositing a chalcogenide glass resist on a second substrate; placing said first substrate with said layer of chalcogenide glass over said chalcogenide glass resist;
illuminating said chalcogenide glass resist through said gray scale pattern; etching said chalcogenide glass resist in an alkaline solution, such that a modulated thickness of chalcogenide glass resist remains; and transferring a representation of said modulated thickness into said second substrate by etching through said modulated thickness of chalcogenide glass resist and into said second substrate.
13. The method of Claim 11 further comprising: transferring a depth pattern, said step of transferring comprising: depositing a chalcogenide glass resist on a second substrate; depositing a second layer containing silver on said chalcogenide glass resist; placing said first substrate with said layer of silver-diffused chalcogenide glass over said second layer containing silver; illuminating said second layer containing silver through said gray scale pattern, such that said illuminated silver is diffused into said chalcogenide glass resist as a function of said gray scale pattern; etching said second layer containing silver wherein the removal of silver uncovers said chalcogenide glass resist and the silver diffused into said chalcogenide glass is not removed;
32
subjecting said silver-containing layer to radiation comprising ultraviolet light, x-rays or an e-beam to thereby write profile information into said chalcogenide glass layer; removing said silver-containing layer; and etching said chalcogenide glass layer to form a profile in said chalcogenide glass layer representing the pattern written with said radiation.
19. Method of claim 18 further comprising the step of transferring the pattern into said chalcogenide glass layer into said substrate.
20. Method of claim 19 wherein said substrate comprises a Ge layer on a transparent layer, whereby after said step of transferring, the remaining portion of said Ge layer represents a gray scale mask.
21. Method of claim 18 wherein at the end of said step of etching said chalcogenide glass profile mimics the intensity of said radiation.
22. Method comprising the steps of: depositing a chalcogenide glass layer on a substrate; selectively irradiating said chalcogenide glass; etching said chalcogenide glass to form a three- dimensional pattern in said chalcogenide glass; and transferring the three-dimensional pattern in said chalcogenide glass to said substrate.
33
23. Method of claim 22 wherein said substrate is transparent, and said three-dimensional pattern causes said substrate to act as a lens .
24. Method for using a gray scale mask, said gray scale mask comprising a thickness modulated chalcogenide glass layer, said method comprising irradiating a resist layer through said thickness modulated chalcogenide glass layer to thereby transfer the thickness pattern in said chalcogenide glass layer to said resist layer.
25. Method of claim 24 wherein said resist layer is another chalcogenide glass layer.
26. Method for using a gray scale mask, said gray scale mask comprising a chalcogenide layer in which portions of said chalcogenide layer have been selectively removed, said method comprising the step of irradiating a resist layer through said chalcogenide layer to thereby transfer gray scale information in said chalcogenide layer to said resist layer.
27. Method of claim 26 wherein said gray scale information is encoded in said chalcogenide layer by providing pixels in said chalcogenide layer.
34
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP98923353A EP0914629A1 (en) | 1997-05-16 | 1998-05-15 | Gray scale mask and depth pattern transfer technique using inorganic chalcogenide glass |
| JP10549320A JP2000514933A (en) | 1997-05-16 | 1998-05-15 | Grayscale mask and depth pattern transfer technology using inorganic chalcogenide glass |
| US09/228,910 US6033766A (en) | 1997-05-16 | 1999-01-11 | Gray scale mask and depth pattern transfer technique using inorganic chalcogenide glass |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/857,324 | 1997-05-16 | ||
| US08/857,324 US5998066A (en) | 1997-05-16 | 1997-05-16 | Gray scale mask and depth pattern transfer technique using inorganic chalcogenide glass |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US08/857,324 Continuation-In-Part US5998066A (en) | 1997-04-11 | 1997-05-16 | Gray scale mask and depth pattern transfer technique using inorganic chalcogenide glass |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US09/228,910 Continuation US6033766A (en) | 1997-05-16 | 1999-01-11 | Gray scale mask and depth pattern transfer technique using inorganic chalcogenide glass |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO1998052101A1 WO1998052101A1 (en) | 1998-11-19 |
| WO1998052101B1 true WO1998052101B1 (en) | 1998-12-30 |
Family
ID=25325738
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US1998/009373 WO1998052101A1 (en) | 1997-05-16 | 1998-05-15 | Gray scale mask and depth pattern transfer technique using inorganic chalcogenide glass |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US5998066A (en) |
| EP (1) | EP0914629A1 (en) |
| JP (1) | JP2000514933A (en) |
| WO (1) | WO1998052101A1 (en) |
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-
1997
- 1997-05-16 US US08/857,324 patent/US5998066A/en not_active Expired - Fee Related
-
1998
- 1998-05-15 EP EP98923353A patent/EP0914629A1/en not_active Withdrawn
- 1998-05-15 JP JP10549320A patent/JP2000514933A/en active Pending
- 1998-05-15 WO PCT/US1998/009373 patent/WO1998052101A1/en not_active Application Discontinuation
-
1999
- 1999-01-11 US US09/228,910 patent/US6033766A/en not_active Expired - Fee Related
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