WO1998045089A1 - Procede de fabrication, procede de polissage, et dispositif de polissage pour dispositifs semi-conducteurs - Google Patents

Procede de fabrication, procede de polissage, et dispositif de polissage pour dispositifs semi-conducteurs Download PDF

Info

Publication number
WO1998045089A1
WO1998045089A1 PCT/JP1998/001621 JP9801621W WO9845089A1 WO 1998045089 A1 WO1998045089 A1 WO 1998045089A1 JP 9801621 W JP9801621 W JP 9801621W WO 9845089 A1 WO9845089 A1 WO 9845089A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
polishing pad
workpiece
scraping
pad
Prior art date
Application number
PCT/JP1998/001621
Other languages
English (en)
Japanese (ja)
Inventor
Tetsuo Ookawa
Hiroyuki Kojima
Hidemi Sato
Takashi Nishiguchi
Original Assignee
Hitachi, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd. filed Critical Hitachi, Ltd.
Publication of WO1998045089A1 publication Critical patent/WO1998045089A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents

Definitions

  • the present invention relates to a method for manufacturing a semiconductor device, a polishing method, and a polishing apparatus.
  • the working surface of the polishing pad In the polishing step using a polishing pad, the working surface of the polishing pad generally deteriorates as the processing time increases. When the work surface of the polishing pad deteriorates, the actual polishing amount becomes smaller than the set polishing amount. Therefore, in the past, con- crete dressing and the like were implemented to prevent the work surface of the polishing pad from deteriorating.
  • con- crete dressing and the like were implemented to prevent the work surface of the polishing pad from deteriorating.
  • concurrent dressing a workpiece to be polished and a grindstone for dressing the polishing pad are placed on a rotating polishing pad to polish the workpiece and remove the polishing pad. Dressing will proceed at the same time.
  • Such concurrent dressing can be done by CMP It is also commonly used in equipment.
  • the polishing pad is greatly consumed by the dressing, and the polishing pad must be replaced in an early cycle. In this case, the cost of the polishing pad is increased, and the burden on the operator is increased.
  • the reason for the high consumption of the polishing pad is that, in concurrent dressing, the surface of the polishing pad is removed together with the deposits using a diamond whetstone.
  • the wear of the grinding wheel is severe, and the grinding wheel must be replaced in a fast cycle. In this case, the cost of the grinding wheel is increased, and the burden on the operator is increased.
  • the cause of the high wear of the grinding wheel is that the diamond abrasive grains fixed on the surface of the grinding wheel are worn.
  • interval dressing it is not necessary to install a wafer and a grindstone on the polishing pad at the same time, so the polishing pad can be downsized.However, deposits on the polishing pad surface during polishing are possible. As the polishing time elapses, the polishing efficiency decreases with the passage of polishing time, and the distribution of the polishing amount in the wafer surface fluctuates. You. This is an important issue related to the quality of semiconductor devices.
  • the wafer surface When the wafer surface is cut using a force or a byte that grinds the wafer surface using a grindstone, or when the wafer surface is wrapped using a polishing platen, the wafer surface is scratched using a polishing pad. When removing the wafer, the wafer needs to be polished.
  • the wafer is primarily polished using a polishing pad with a high elastic modulus to remove this scratch, and then a polishing pad with a lower elastic modulus is used. It is necessary to perform secondary polishing using
  • an object of the present invention is to provide a method of manufacturing a semiconductor device, a polishing method, and a polishing apparatus, which can obtain a stable polishing efficiency and reduce the consumption of a polishing pad. It is in. Disclosure of the invention
  • a method for manufacturing a semiconductor device comprising: supplying a slurry to a polishing pad to polish a substrate; The particles for scraping off the deposits on the surface and the slurry are supplied to the polishing pad surface separately or as a mixture, and the surface to be processed of the substrate and the polishing pad surface are relatively positioned.
  • a method for manufacturing a semiconductor device which comprises polishing a substrate to be moved.
  • a method of manufacturing a semiconductor device having a step of polishing a substrate, wherein a grinding fluid or a slurry is supplied to the surface of the grindstone.
  • the first polishing is performed on the substrate by relatively moving the grindstone and the substrate, and the particles and the slurry for removing the deposits for removing the deposits on the surface of the polishing pad are formed.
  • a method of manufacturing a semiconductor device having a step of polishing a substrate, wherein the slurry is formed on a surface of a polishing plate made of metal or resin.
  • the first polishing is performed on the substrate by moving the polishing platen and the substrate relatively to each other, and the particles and slurry for removing the deposits for scraping the deposits on the surface of the polishing pad are supplied.
  • the second polishing is performed on the substrate by supplying the polishing pad surface separately or as a mixture to the polishing pad surface and relatively moving the polishing pad surface and the processed surface of the substrate.
  • a method for manufacturing a conductive device is provided.
  • a semiconductor device manufacturing method for supplying a slurry to a polishing pad and polishing a substrate.
  • the particles for scraping out the deposits on the polishing pad surface and the slurry are supplied separately or as a mixture to the polishing pad surface, and the work surface of the substrate and the polishing pad surface are compared with each other.
  • the first polishing is applied to the substrate, and the polishing pad used in the first polishing step is also subjected to the second polishing using the second polishing pad having a small surface rigidity.
  • the particles for removing deposits for removing deposits on the surface of the polishing pad and the slurry are used. Are supplied separately or as a mixture onto the polishing pad surface, and the workpiece and the polishing pad surface are relatively moved while pressing the workpiece surface of the workpiece against the polishing pad surface.
  • a mixture of the particles for removing the deposits and the slurry for scraping off the deposits on the surface of the polishing pad is provided on the surface of the polishing pad.
  • a base a rotatable polishing plate, and a rotation center of the polishing plate provided on the polishing plate and provided on the surface thereof
  • a polishing pad having a plurality of drain passages formed concentrically around a center, wherein the arm is fixed to the base, and the arm is aligned with an arrangement pitch of the plurality of drain passages.
  • a polishing apparatus comprising: a plurality of scraping pieces attached to a polishing table; wherein each of the plurality of scraping pieces scrapes deposits from each drainage channel when the polishing platen rotates. Is provided.
  • a chemical mechanical polishing apparatus for chemically and mechanically removing and flattening irregularities on the surface of a workpiece.
  • a supply device for supplying a mixture of the particles for scraping the deposits and the slurry for scraping the deposits on the surface of the polishing pad onto the surface of the polishing pad, holding the workpiece and holding the workpiece.
  • a chemical mechanical polishing apparatus is provided, comprising at least a holding member for pressing against a surface of a polishing pad, and a device for relatively moving the workpiece and the polishing pad. .
  • a grinding fluid or a slurry is used in a polishing method using a grindstone and a polishing pad.
  • Particles for deposit removal for supplying first to the surface of the grindstone and relatively moving the grindstone and the workpiece to perform the first polishing on the workpiece and scraping the deposit on the polishing pad surface
  • the slurry are supplied separately or as a mixture to the surface of the polishing pad to move the surface of the polishing pad and the surface of the workpiece relative to each other.
  • the slurry is made of metal or resin.
  • the first polishing is performed on the workpiece by supplying the workpiece to the surface of the polishing table and moving the polishing table and the workpiece relative to each other, and a deposit for scraping off the deposit on the polishing pad surface.
  • the polishing particles and the slurry are supplied separately or as a mixture to the surface of the polishing pad to relatively move the surface of the polishing pad and the workpiece.
  • the polishing method of the present invention for achieving the above object, in the polishing method for supplying a slurry to the polishing pad and polishing the workpiece, The particles for scraping out the deposits and the slurry are supplied to the surface of the polishing pad separately or as a mixture to move the surface of the workpiece and the surface of the polishing pad relatively.
  • the workpiece is subjected to the first polishing, and the polishing pad used in the first polishing step is also subjected to the second polishing using the second polishing pad having a small surface rigidity.
  • the polishing method characterized by performing the polishing of the above is provided.
  • FIG. 1 is a block diagram showing a polishing apparatus according to an embodiment of the present invention
  • FIG. 2 is a block diagram schematically showing the polishing apparatus of FIG. 1 as viewed from above
  • FIG. 3 is an explanatory view showing the appearance of the surface of the polishing pad of the polishing apparatus.
  • FIG. 3 (a) is an explanatory view showing the appearance of the polishing pad of the polishing apparatus of FIG. 1 according to the present invention.
  • FIG. 3 (b) is an explanatory view showing a state on a polishing pad of a conventional polishing apparatus.
  • FIG. 4 is a diagram (part 1) showing the results of a comparison experiment between the polishing apparatus of the present invention shown in FIG. 1 and a conventional polishing apparatus, and FIG.
  • FIG. 5 shows the polishing apparatus of the present invention shown in FIG. Fig. 6 shows the results of a comparative experiment between the polishing apparatus of the present invention and the conventional polishing apparatus shown in Fig. 1, and Fig. 6 shows the results of a comparative experiment between the polishing apparatus of the present invention and the conventional polishing apparatus.
  • FIG. 7 is a diagram (part 4) showing the results of a comparison experiment between the polishing apparatus of the present invention shown in FIG. 1 and a conventional polishing apparatus
  • FIG. FIG. 5 is a diagram (part 5) showing the results of a comparative experiment between the polishing apparatus of the present invention of FIG. 1 and a conventional polishing apparatus
  • FIG. 9 shows a polishing apparatus of another embodiment of the present invention.
  • FIG. 7 is a diagram (part 4) showing the results of a comparison experiment between the polishing apparatus of the present invention shown in FIG. 1 and a conventional polishing apparatus
  • FIG. 5 is a diagram (part 5) showing the results of a comparative experiment between the polishing apparatus
  • FIG. 10 is a schematic configuration diagram showing a processing process of performing roughing and finishing using a polishing apparatus according to still another embodiment of the present invention.
  • FIG. 11 is a schematic configuration diagram showing a machining process for performing rough machining and finish machining using a polishing apparatus according to still another embodiment of the present invention.
  • FIG. 1 shows a main part of the polishing apparatus of the present embodiment.
  • This polishing apparatus is a so-called chemical mechanical polishing apparatus (CMP apparatus).
  • CMP apparatus chemical mechanical polishing apparatus
  • a chuck 3 for holding a workpiece 1 via an elastic body 2 and a polishing pad 4 are detachable.
  • a polishing platen 5 attached to the base, a base 6 surrounding the lower surface and side surfaces of the polishing platen 5 so as not to hinder the rotation of the polishing platen 5, and a polishing pad surface (work surface).
  • a working fluid supply device 10 for supplying a working fluid 7;
  • An electric field generating device 20 for generating an electric field in a specific region including a part of the polishing pad 4 is shown.
  • the polishing apparatus also includes a first rotation mechanism for rotating the polishing table 5, a second rotation mechanism for rotating the chuck 3, and a feeding mechanism for moving the chuck 3 in the X direction.
  • a pressing mechanism for pressing the workpiece 1 against the polishing pad surface is provided.
  • the first rotating mechanism includes a servomotor and a speed reducer, and transmits the output of the servomotor to the rotating shaft of the polishing table 5 via the speed reducer to rotate the polishing table 5.
  • the feed mechanism also includes a servo motor and a speed reducer.
  • the output of the servo motor is transmitted to the spline formed on the ball screw for chuck feed via the speed reducer, and the chuck 3 is moved in the X direction.
  • Move to The pressing mechanism moves the chuck 3 in the z direction using an air cylinder, and presses the workpiece 1 against the polishing pad surface.
  • the workpiece 1 is, for example, a silicon wafer in a stage where wirings are being multi-layered, and a SiO 2 interlayer insulating film is formed on the surface thereof. Under the interlayer insulating film, a wiring group having a fine pattern is formed. For this reason, a level difference occurs in the interlayer insulating film between a portion where the wiring exists and a portion where the wiring does not exist.
  • the present polishing apparatus is used to flatten the unevenness of the surface of the interlayer insulating film or to polish a metal film constituting a wiring group.
  • a mixture of the slurry 7 and particles for scraping out deposits for scraping out deposits on the surface of the polishing pad is used in the slurry.
  • the function and effect of the sediment scraping particles will be described later in detail.
  • a slurry having a solid phase reactivity with a member having a surface to be processed is used.
  • an alkaline solution containing about 20% by weight of SiO 2 abrasive grains (silica abrasive grains) having a particle size of about 30 nm may be used.
  • the polishing pad 4 is formed of a material having excellent wear resistance and chemical resistance.
  • a polishing pad made of a rigid foamed polyurethane-based synthetic resin is used. The surface of the polishing pad has a predetermined surface roughness, and a plurality of minute concave portions corresponding to the surface roughness are formed on the surface.
  • the machining fluid supply device 10 includes a tank 11 for temporarily storing a machining fluid 7 (ie, a mixture of slurry and sediment scraping particles) sent from outside, and a sediment scraping particle in the tank 11 ⁇ . ⁇ ⁇ Agitator 12 for agitating these so that the abrasive grains do not settle, pump 14 for pumping the machining fluid in tank 11 from supply pipe 13, and supply of machining fluid per unit time Adjusting the volume is configured with a valve 15 '.
  • the slurry and sediment scraping particles may be supplied separately, taking care to mix well on the polishing pad surface.
  • the electric field generator 20 includes a disk-shaped electrode plate 21 disposed directly below the polishing pad 4, a rail 22 attached to the base 6, and a motor drive not shown. It is fixed to the table 23 and the table 23 that moves directly along the rail 22 and moves in the radial direction (X direction) of the polishing pad 4 while maintaining a certain distance from the surface of the polishing pad. It comprises an electrode plate 24, a power supply 25 built in the base 6, and a switch 26. The power supply 25 and the electrode plate 21 are electrically connected via a slip ring 8 attached to the rotating shaft of the polishing platen 5, and this electrical connection is made by the polishing platen. It is maintained while 5 is rotating. As shown in FIG.
  • the moving area 24a of the electrode plate 24 and the moving area 3a of the chuck 3 are set so as not to overlap with each other. Then, when the switch 26 is turned on, an electric field is formed between the electrode plates 21 and 24. The strength of the electric field is adjusted by increasing or decreasing the voltage of the power supply 25. In addition, when the position of the electrode plate 24 is moved in the X direction, an electric field is generated, and the region moves accordingly.
  • the configuration of the electric field generator 20 is not limited to that described above. Instead of moving the electrode plates 24 along the rails 22, a plurality of electrode plates 24 are previously set on the rails 22 at regular intervals. Then, any one of these electrode plates may be selected and an electric field may be generated there. In the electric field generator 20 of the present embodiment, the table 23 slides on the rail 22. However, if this sliding portion can be omitted, the durability of the device is improved structurally.
  • a processing liquid 7 is supplied onto the surface of the polishing pad using these components, and a wafer is provided on the surface of the polishing pad.
  • the process of pressing the surface to be processed 1 and the process of relatively moving the surface of the polishing pad and the surface of the wafer 1 to be processed are simultaneously performed, for example, by the mechanical and chemical polishing action of the processing liquid 7.
  • fine irregularities on the surface to be processed are removed, and finally, the surface to be processed is mirror-finished.
  • the deposits generated by the polishing are scraped off from the surface of the polishing pad by the deposit scraping particles.
  • FIG. 3 (a) shows how the deposits on the polishing pad surface are scraped out.
  • a working fluid 7 is supplied between the surface of the polishing pad 4 and the surface to be processed of the wafer 1.
  • the working liquid 7 is composed of a liquid 71 serving as a solvent, abrasive grains 72 for polishing, and particles 73 for scraping out deposits.
  • the sediment scraping particles 73 are made of a polymer (for example, having a longitudinal elastic modulus of about 2 to 3 Gp). It is a spherical member made of acrylic resin or ethylene resin.
  • polishing of the surface to be processed of the wafer 1 is mainly realized by the abrasive grains 72 present at a contact portion between the surface to be processed and the surface of the polishing pad 4. This is the same for conventional CMP equipment.
  • FIG. 3 (b) shows the state of the surface state of the polishing pad 4 in the conventional CMP apparatus.
  • chips and the like generated during polishing are deposited on the concave and convex portions of the surface of the polishing pad 4 as deposits 74, and polishing is conventionally performed.
  • Pad 4 was clogged.
  • debris is generated around the convex portion on the surface of the polishing pad 4, so that deposits also accumulate on this convex portion.
  • a dedicated grindstone grindstone 30 in FIG. 2
  • This in-process dressing is a process in which diamond abrasive grains are fixed to the surface of a grindstone, and while the diamond abrasive grains are pressed against the polishing pad, the grindstone and the polishing pad slide. This is the operation to remove the waste together with the sediment.
  • the deposit is moved in the concave portion on the surface of the polishing pad 4 or so as to move from the concave portion to the concave portion. Since the scraping particles 73 roll, the sediment 74 is scraped off. Therefore, clogging of the polishing pad 4 due to the deposits 74 hardly occurs in this portion, and a decrease in polishing efficiency can be prevented. In addition, sediment scraping particles 7 Since the roller 3 rolls on the surface of the polishing pad 4, the surface of the polishing pad 4 is not shaved, and the consumption of the polishing pad 4 is significantly suppressed.
  • the deposit scraping particles 73 are attracted in the electric field generated between the electrode 21 and the electrode 24, the deposit is deposited on the surface of the polishing pad 4.
  • the scraping particles 73 stay to some extent.
  • the density of the particles 73 for excavating the sediment in the machining liquid 7 increases, the frequency of contact between the surface of the polishing pad 4 and the particles 73 for exposing the sediment increases, and the particles for exposing the sediment increase. 7
  • the effect of eliminating blind spots by 3 is improved.
  • the difference between the present polishing apparatus and the conventional polishing apparatus CMP apparatus
  • a comparative experiment was performed by actually operating the present polishing apparatus and the conventional polishing apparatus.
  • polishing time 1 O min (However, the polishing efficiency is measured every 2 minutes)
  • Depth of multiple minute parts existing on the surface of the polishing pad 30 to 40 ⁇ m
  • V, T k —T k '(Equation 1)
  • V ⁇ 10 00 (Vmax— Vmin) / (2 Vave) (Equation 2) where k is a natural number of 49 or less, Vmax is the maximum polishing amount, Vmin is the minimum polishing amount, and Vave is the average polishing amount. It is.
  • Dressing member Diamond whetstone placed on polishing pad Dressing timing: Only during or before polishing Dressing time: Same time as polishing time
  • Sediment scraping time Same time as polishing time
  • Each mark (a) in the figure shows a change in the polishing efficiency of a conventional polishing apparatus when dressing is continuously performed during polishing.
  • Each mark in (g) shows the change in the polishing efficiency of a conventional polishing apparatus when dressing is performed only before polishing.
  • Each mark in (c) shows the transition of the polishing efficiency when the particle diameter of the particles for scraping out deposits is 8 m and the concentration is 5% by weight in the polishing apparatus of the present embodiment.
  • Each mark in (d) shows the transition of the polishing efficiency when the particle size of the sediment scraping particles is 8 ⁇ m and the concentration is 10% by weight.
  • Each mark in (e) shows the change in the polishing efficiency when the particle size of the sediment extraction particles is 8 ⁇ m and the concentration is 1% by weight.
  • the average value of the polishing efficiency is about ⁇ 18 ⁇ m / min, which is 10% lower than the average value of (a) in comparison with (a). did.
  • the average value of the polishing efficiency was about 0.16 ⁇ m / min, which was about 20% lower than the average value of (a) in comparison with (a).
  • the stability of polishing efficiency is good. It was equivalent to (a). This clearly shows that the particles for scraping off sediment had an effect of eliminating clogging.
  • the polishing efficiency was stable, but the average value of the polishing efficiency was about 0, 12 m / min.
  • the average value of the polishing efficiency in (a) was It has been reduced by about 40%. This is due to the fact that the particle size of the particles for scraping out deposits is larger than the depth of the minute recesses on the surface of the polishing pad, so that the polishing pad surface is less likely to contact the surface to be processed and the polishing efficiency is reduced. Seem. Therefore, in order to improve the polishing efficiency, the size of the particles for scraping out the deposits must be at least as small as the average depth of the plurality of recesses present on the surface of the polishing pad. is there.
  • Figs. 5 (a) and (b) show the surface profile of the polishing pad when dressing is performed before polishing and not during polishing ((g) in Fig. 4). The measurement results are shown.
  • the surface profile file in Fig. 5 (a) is the one immediately after dressing, and the surface profile in Fig. 5 (b) is the one after 10 minutes from the start of polishing. In this way, if no dressing work is performed during the polishing operation, the polishing The eye moves rapidly on the head.
  • Fig. 5 (c) shows the surface profile when the particles for excavating the sediment and the electric field generator were used (in the case of (b) in Fig. 4). 10 minutes after the start of polishing, but almost no clogging and almost the same state as the profile immediately after dressing (Fig. 5 (a)) .
  • the sixth diagram (a), as with the 4 (a), the during polishing continuously in polishing efficiency in case of performing Doretsushingu transition is the indicated c the 6 (b) is As in (b) of Fig. 4, the change in polishing efficiency when using 8 ⁇ particles for scraping out deposits and an electric field generator is shown. C As is clear from the figure, (b) The polishing efficiency of (a) is stable at about the same level as (a), and even if polishing is performed for a long period of time, the effect of the particles for scraping off the deposits is sufficiently exhibited.
  • the initial thickness of the polishing pad before polishing was about 1.3 mm in both cases (a) and (b) of FIG.
  • the polishing time exceeded 100 minutes, the polishing pad was cut, and the thickness of the polishing pad in the radial direction at the portion where the wafer passed was measured using a micrometer. . After that, the difference from the initial thickness was determined for each measurement result, and the consumption of the polishing pad was calculated based on the average value.
  • the consumed amount under the condition (a) was about 150 ⁇ m.
  • the amount of consumption under the condition (b) was about 10 ⁇ m.
  • polishing efficiency in the wafer surface was equivalent to that obtained when continuous dressing was performed ((a) in FIG. 7).
  • the distribution of the polishing efficiency in the wafer surface can be arbitrarily changed by moving the position of the electrode 24.
  • FIG. 8 shows a change in the thickness of the polishing pad when a large number of wafers are polished, where the most remarkable effect is exhibited in the present embodiment.
  • the measurement was performed by cutting the polishing pad and measuring with a micrometer as described above.
  • ⁇ Fig. 8 (a) shows the case of (a) in Fig. 4 (that is, the dressing was continuously performed during polishing). The transition of the thickness of the polishing pad is shown.
  • FIG. 8 (c), in the fourth diagram of (c) (i.e., the particle size of the deposited writers out and for particles with 8 m, when the concentration of 5 wt. / 0)
  • the transition of the thickness of the polishing pad is shown.
  • the polishing apparatus of the present embodiment shows that the polishing pad thickness hardly changes even when 100 wafers are polished. The consumption of the polishing pad is completely suppressed.
  • the polishing pad becomes thinner as the number of sheets increases. This means that the maintenance time in the semiconductor manufacturing process is much shorter in the present embodiment than in the conventional example.
  • the comparative experiment between the polishing apparatus of the present embodiment and the conventional polishing apparatus has been described. Separately, the experiment was performed by applying the polishing apparatus of the present embodiment to a multilayer wiring process of a semiconductor device. .
  • the surface roughness of the interlayer insulating film was measured to be 0.3 nm or less as a result of measuring the surface roughness of the interlayer insulating film by using a contact surface roughness meter and an atomic force microscope. Was confirmed.
  • the surface roughness of the interlayer insulating film at the step was measured using a contact surface roughness meter and an atomic force microscope. It was confirmed that the surface was flattened to 0 5 ⁇ m or less.
  • the above measured values are values that can satisfy the conditions required for an interlayer film of an ultrafine line having a line width of 0.15 m.
  • the application of the present polishing apparatus to the multilayer wiring process is only an example shown for evaluating the apparatus performance. Therefore, needless to say, even if the present polishing apparatus is introduced into a polishing process of another component (for example, an optical element or the like) requiring high shape accuracy, the same beneficial effect can be achieved.
  • another component for example, an optical element or the like
  • FIG. 1 Another embodiment of the polishing apparatus according to the present invention is shown in FIG. 1
  • a polishing pad 104 formed with a plurality of concentric drainage channels (drainage grooves) 104a is attached to the upper surface of the polishing platen 105.
  • This groove is formed, for example, with a groove width of about 100 m and a groove depth of about 300 to 400 ⁇ m.
  • polishing pad 104 having such a form has existed in the past, when the polishing process was performed using the polishing pad, as the polishing time elapses, the above-described processing was performed in the groove 104a. Debris accumulates and clogs the grooves, lowering polishing efficiency.
  • an arm 102 provided with a plurality of scraping pieces (for example, thin resin pieces having sharp pointed ends) 101 is provided.
  • the arm 102 is fixed to a translation table 103 movable in the z direction.
  • the mounting pitch of the scraping pieces 101 matches the pitch of the concentric grooves of the polishing pad.
  • the linear motion table 103 moves in the z direction and pushes each piece 101 into the groove 104a of the polishing pad 104. .
  • the tip of the scraping piece 101 slides at the bottom of the groove 104a, and the sediment in the groove is scraped out.
  • the arm 102 with a scraping piece may be attached to, for example, the polishing apparatus shown in FIG. In this case, the arm 102 with a scraping piece is installed at a position indicated by a dotted line in FIG. 2, for example.
  • Polishing apparatus of the present embodiment Even if polishing was continued without dressing with a grindstone, the inside of the groove was not clogged. In this case, the effect of eliminating the clogging inside the groove was the same between the case where the scraping piece was continuously slid and the case where it was slid for 30 seconds every 10 minutes. .
  • FIG. 10 (a) shows a first polishing mechanism of the polishing apparatus of the present embodiment.
  • This grinding device is a so-called grinding machine when using a grindstone, and a lapping machine when using a lap surface plate.
  • the workpiece 1 is made of an elastic body 2 b
  • a chuck 3b which is held through a hole, and a polishing platen 5b to which a grindstone 4b (or a lap platen 4c) is removably attached as main components, are provided.
  • the machining fluid 7b is supplied on the surface (work surface) of the grinding wheel 4b (or the lap surface plate 4c).
  • a base that surrounds the lower surface and side surfaces of the polishing table 5b so as not to hinder the rotation of the polishing table 5b.
  • the first rotation mechanism includes a servomotor and a speed reducer, and outputs the output of the servomotor via the speed reducer.
  • the feed mechanism also includes a servo motor and a speed reducer.
  • the output of the servo motor is transmitted to the spline formed on the ball screw for chuck feed via the speed reducer, and the chuck 3 b is moved to X Move in the direction.
  • the pressurizing mechanism moves the chuck 3b in the z-direction with the aid of a cylinder, and presses the workpiece 1 against the grindstone surface or the lap surface.
  • the workpiece 1 is, for example, a silicon wafer in a stage in which wiring is multi-layered, and an SiO 2 interlayer insulating film is formed on the surface thereof. Under the interlayer insulating film, a group of wires having a fine pattern is formed. For this reason, a level difference occurs in the interlayer insulating film between a portion where the wiring exists and a portion where the wiring does not exist.
  • the first polishing mechanism is used to flatten the unevenness of the surface of the interlayer insulating film or to polish a metal film constituting a wiring group.
  • a slurry is used as the working fluid 7b.
  • a slurry with a solid surface reactivity with a member having a surface to be processed is used.
  • a particle size of about 3 0 nm of S i 0 2 abrasive grains obtained by mixing (silica abrasive grains) from about 2 0% by weight and a particle size about 1 0 0 nm of C E_ ⁇ 2 abrasive use those mixed with (oxidation parsley um abrasive grains) from about 2 0% by weight.
  • a material obtained by mixing alumina abrasive grains in an acid solution is used.
  • the grindstone 4b is formed of a material having a low elastic modulus so that scratches do not occur on the wafer surface during processing.
  • a grindstone formed of cerium oxide abrasive grains is used.
  • the whetstone surface has a predetermined surface roughness and flatness.
  • the machining fluid supply device includes a tank for storing the machining fluid 7b sent from outside, a stirrer for stirring the abrasive fluid so as not to settle in the tank, and a machining fluid in the tank. It has a pump for sending 7b from the supply pipe 13b and a valve for adjusting the supply amount of machining fluid per unit time.
  • FIG. 10 (b) shows a second polishing mechanism of the polishing apparatus of the present embodiment.
  • the second polishing mechanism is a so-called chemical mechanical polishing apparatus (CMP apparatus), and has the same configuration as the polishing apparatus shown in FIG.
  • CMP apparatus chemical mechanical polishing apparatus
  • roughing is performed by the polishing apparatus shown in FIG. 10 (a), and finishing is performed by the polishing apparatus shown in FIG. 10 (b).
  • the first polishing mechanism uses the above components to supply a machining fluid 7b onto the surface of the grindstone 4b (or the lap surface plate 4c).
  • the processing to remove the fine irregularities on the surface to be processed is performed by the mechanical and chemical polishing action of the processing liquid 7b. This is rough processing of the work surface of the work 1 by the first polishing mechanism.
  • a process of supplying a working fluid 7 onto the surface of the polishing pad 4 using the above-described constituent elements The process of pressing the surface to be processed of the wafer 1 against the surface of the polishing pad 4 and the process of moving the surface of the polishing pad 4 and the surface to be processed of the wafer 1 relative to each other are simultaneously executed.
  • Mechanical and chemical polishing with the processing liquid 7 By the action, fine irregularities on the surface to be processed are removed, and finally, the surface to be processed is mirror-finished.
  • This book second polishing In the mechanical part, in particular, the surface to be processed is finished.
  • FIG. 11 (a) shows a first polishing mechanism of the polishing apparatus of the present embodiment.
  • This polishing apparatus is a so-called chemical mechanical polishing apparatus (CMP apparatus), and polishes the surface of a wafer by the same method as the polishing apparatus shown in FIG.
  • CMP apparatus chemical mechanical polishing apparatus
  • FIG. 11 (b) shows a second polishing mechanism of the polishing apparatus of the present embodiment.
  • the second polishing mechanism is a so-called chemical mechanical polishing device (CMP device).
  • CMP device chemical mechanical polishing device
  • a chuck 3 c for holding the workpiece 1 through the elastic body 2 c and a soft A polishing platen 5c to which the polishing pad 4d is detachably attached, and a supply pipe 13c for supplying the machining fluid 7c onto the surface (work surface) of the soft polishing pad 4d. It is shown.
  • Fig. 11 (b) includes the following components.
  • a base surrounding the lower surface and side surfaces of the polishing platen 5c so as not to hinder the rotation of the polishing platen 5c, and a first rotating mechanism for rotating the polishing platen 5c, and the chuck 3c are rotated.
  • the first rotating mechanism is composed of a servomotor and a speed reducer.
  • the output of the servomotor is transmitted to the rotating shaft of the polishing table 5c via a speed reducer, and the polishing table 5c is rotated.
  • the feed mechanism also includes a servo motor and a speed reducer, and transmits the output of the servo motor to the spline formed on the ball screw for chuck feed through the speed reducer _.
  • Move to The pressurizing mechanism moves the chuck 3c in the z direction with an air cylinder, and presses the workpiece 1 against the soft polishing pad.
  • FIG. 11 (a) the workpiece 1 is subjected to a first polishing step by the same processing as in FIG.
  • the soft polishing pad 4d used in the second polishing step shown in FIG. 11 (b) is formed of a material having excellent wear resistance and chemical resistance.
  • a polishing pad made of a soft foamed polyurethane-based synthetic resin is used.
  • the surface of the polishing pad has a predetermined surface roughness, and a plurality of minute concave portions corresponding to the surface roughness are formed on the surface.
  • This second polishing mechanism is also a so-called chemical mechanical polishing device (CMP device), and is different from the polishing pad of the polishing device shown in FIG. 1 (FIG. 11 (a)).
  • CMP device chemical mechanical polishing device
  • a soft polishing pad with a low elastic modulus is provided, and the surface of a wafer rough-processed by the polishing device shown in Fig. 11 (a) is polished.
  • processing for supplying the working liquid 7c onto the surface of the soft polishing pad 4d and processing for pressing the surface to be processed of the wafer 1 against the surface of the soft polishing pad 4d are performed.
  • the process of relatively moving the surface of the soft polishing pad 4d and the surface to be processed of the wafer 1 is performed, and fine irregularities on the surface to be processed are mechanically and chemically polished by the processing liquid 7c.
  • the surface to be processed is finally mirror-finished (finished).
  • Industrial applicability As described above in detail, according to the present invention, clogging of the polishing pad is suppressed by the action of the particles for scraping out deposits during polishing, the polishing efficiency is stabilized, and the polishing pad is stabilized. This significantly reduces the amount of power consumption, and significantly reduces maintenance time in the manufacturing process for semiconductors and other products.
  • the present invention is suitable for use in a semiconductor manufacturing process having a polishing step.

Abstract

Le procédé de fabrication de dispositifs semi-conducteurs de la présente invention comporte une opération de polissage qui donne un coefficient homogène d'enlèvement à la finition et permet de réduire la consommation des tampons à polir. Ce procédé consiste, d'une part à garnir le tampon de polissage d'un mélange fait d'une boue liquide et de grenaille capable de décaper le dépôt, et d'autre part à faire bouger l'un par rapport à l'autre le tampon de polissage et la pièce. De la sorte, les déchets de polissage sont éliminés par l'action de raclage de la grenaille de décapage, même s'ils ont tendance à se redéposer sur le tampon de polissage.
PCT/JP1998/001621 1997-04-09 1998-04-08 Procede de fabrication, procede de polissage, et dispositif de polissage pour dispositifs semi-conducteurs WO1998045089A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9/90939 1997-04-09
JP9093997 1997-04-09

Publications (1)

Publication Number Publication Date
WO1998045089A1 true WO1998045089A1 (fr) 1998-10-15

Family

ID=14012431

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1998/001621 WO1998045089A1 (fr) 1997-04-09 1998-04-08 Procede de fabrication, procede de polissage, et dispositif de polissage pour dispositifs semi-conducteurs

Country Status (1)

Country Link
WO (1) WO1998045089A1 (fr)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6288566A (ja) * 1985-10-16 1987-04-23 Osamu Imanaka 精密研磨方法
JPH06190714A (ja) * 1992-09-24 1994-07-12 Ebara Corp ポリッシング装置
JPH07108453A (ja) * 1992-01-24 1995-04-25 Kyushu Electron Metal Co Ltd 半導体ウェーハ用研磨布のドレッシング方法
JPH0811049A (ja) * 1994-06-29 1996-01-16 Hitachi Ltd 研磨装置及び研磨方法
JPH08267354A (ja) * 1995-03-31 1996-10-15 Nec Corp ウェハ研磨装置
JPH09285957A (ja) * 1996-04-18 1997-11-04 Hitachi Ltd 研磨材、それを用いた研磨方法および装置
JPH104070A (ja) * 1996-06-14 1998-01-06 Matsushita Electric Ind Co Ltd 化学機械的研磨方法
JPH10156704A (ja) * 1996-12-03 1998-06-16 Toshiba Mach Co Ltd 研磨方法およびその装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6288566A (ja) * 1985-10-16 1987-04-23 Osamu Imanaka 精密研磨方法
JPH07108453A (ja) * 1992-01-24 1995-04-25 Kyushu Electron Metal Co Ltd 半導体ウェーハ用研磨布のドレッシング方法
JPH06190714A (ja) * 1992-09-24 1994-07-12 Ebara Corp ポリッシング装置
JPH0811049A (ja) * 1994-06-29 1996-01-16 Hitachi Ltd 研磨装置及び研磨方法
JPH08267354A (ja) * 1995-03-31 1996-10-15 Nec Corp ウェハ研磨装置
JPH09285957A (ja) * 1996-04-18 1997-11-04 Hitachi Ltd 研磨材、それを用いた研磨方法および装置
JPH104070A (ja) * 1996-06-14 1998-01-06 Matsushita Electric Ind Co Ltd 化学機械的研磨方法
JPH10156704A (ja) * 1996-12-03 1998-06-16 Toshiba Mach Co Ltd 研磨方法およびその装置

Similar Documents

Publication Publication Date Title
US5919082A (en) Fixed abrasive polishing pad
US6387289B1 (en) Planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6656019B1 (en) Grooved polishing pads and methods of use
CN1400636A (zh) 研磨半导体晶片的复合研磨垫及其制作方法
US6439978B1 (en) Substrate polishing system using roll-to-roll fixed abrasive
US6489243B2 (en) Method for polishing semiconductor device
TWI446993B (zh) 磨光方法及磨光裝置
KR100832768B1 (ko) 웨이퍼 연마 장치 및 웨이퍼 연마 방법
US6824451B2 (en) Process for the abrasive machining of surfaces, in particular of semiconductor wafers
US6663472B2 (en) Multiple step CMP polishing
KR20010021351A (ko) 연마방법 및 연마장치
JP2002066905A (ja) 半導体装置の製造方法及びその装置
JP3658986B2 (ja) 半導体デバイスの製造方法及び研磨方法並びに研磨装置
US20020074311A1 (en) Methods of endpoint detection for wafer planarization
WO1998045089A1 (fr) Procede de fabrication, procede de polissage, et dispositif de polissage pour dispositifs semi-conducteurs
JP2565385B2 (ja) 電解ドレッシング研削法と導電性砥石を工具に兼用した研磨法の複合加工方法および装置
WO2000024548A1 (fr) Dispositif de polissage et procede de fabrication de semi-conducteurs au moyen dudit dispositif
JP4601317B2 (ja) 研磨具およびその製造方法
JP2001088008A (ja) 研磨方法とその装置
JP2004017214A (ja) パッドコンディショニング装置、パッドコンディショニング方法、及び研磨装置
TW527262B (en) Method for improving curvature of the polished surface by chemical mechanical polishing
KR200274610Y1 (ko) 드레싱 단계를 개선시킨 화학기계연마장치
JPH10553A (ja) 化学的・機械的な研磨方法及びその装置並びに半導体装置の製造方法
JPH10109263A (ja) 化学的機械研磨方法及び化学的機械研磨装置
JP2001219363A (ja) 研磨パッド及び研磨パッドの製造方法及び研磨パッドを用いた加工物の製造方法

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): CN KR SG US

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase