WO1998043296A2 - Procede de couplage peu inductif d'un thyristor, blocable par la gachette, a son dispositif de commande - Google Patents

Procede de couplage peu inductif d'un thyristor, blocable par la gachette, a son dispositif de commande Download PDF

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Publication number
WO1998043296A2
WO1998043296A2 PCT/DE1998/000775 DE9800775W WO9843296A2 WO 1998043296 A2 WO1998043296 A2 WO 1998043296A2 DE 9800775 W DE9800775 W DE 9800775W WO 9843296 A2 WO9843296 A2 WO 9843296A2
Authority
WO
WIPO (PCT)
Prior art keywords
thyristor
cathode
circuit board
annular
printed circuit
Prior art date
Application number
PCT/DE1998/000775
Other languages
German (de)
English (en)
Other versions
WO1998043296A3 (fr
Inventor
Dieter Metzner
Michael Peppel
Eric Baudelot
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Priority to EP98924013A priority Critical patent/EP0968531A2/fr
Publication of WO1998043296A2 publication Critical patent/WO1998043296A2/fr
Publication of WO1998043296A3 publication Critical patent/WO1998043296A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/645—Inductive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the invention relates to a device for the low-inductance connection of a thyristor that can be switched off to its control device.
  • a device according to claim 1 is known from the publication entitled “Series connection of GTO thyristors for high-performance frequency converters", printed in the DE magazine “ABBtechnik”, 1996, number 5, pages 14-20 and the configuration an associated thyristor is described in more detail in EP 0 588 026 A2.
  • GTO thyristors In order to increase the performance of GTO converters, there are several options, of which the series connection of several thyristors that can be switched off, also known as gate turn-off thyristors (GTO thyristors), have the greatest advantages in terms of system and operating costs having. Basically, the DC link voltage of a GTO converter can be increased according to the number of GTO thyristors connected in series. However, special attention must be paid to the uniform voltage distribution between the voltage semiconductors. The series connection of the GTO thyristors places very high demands on the temporal accuracy of the switching processes. It is required that all GTO thyristors connected in series switch, for example within about 200 nsec. A hard control was developed for this.
  • the gate current of a GTO thyristor has a significantly higher slope (up to 3000 A / ⁇ sec) and amplitude than with conventional len controls (30 A / ⁇ sec).
  • the inductance of the control unit had to be reduced by a factor of 100, which led to a completely new design.
  • GTO thyristors and control unit form a complete design unit.
  • the GTO thyristor on the one hand and the control device on the other had to be changed.
  • the GTO thyristor was given a circular gate flange as the gate feed.
  • the circuit board which accommodates the electronics of the control circuit, was extended in such a way that it could be used as connections for the GTO thyristor.
  • this circuit board for receiving the GTO thyristor is provided with a corresponding hole.
  • a cathode counterpart and a metal spacer are also required.
  • the circular spacer surrounds the corresponding hole and is soldered to one side of the circuit board.
  • the gate flange is covered with an annular ring which is also soldered onto the second side of this printed circuit board.
  • the GTO thyristor with its two control connections (gate flange, cathode) is electrically conductively connected to the two sides of the printed circuit board, the cathode counterpart being releasably connected to the annular spacer.
  • the gate current flows directly from the control transistors of the drive circuit via the circuit board to the gate connection of the GTO thyristor.
  • This device for the low-inductance connection of a thyristor that can be switched off to its control device has achieved a current steepness of the gate current of 3000 A / ⁇ sec.
  • This hard control reduces the response time of a thyristor that can be switched off and its spread to about a tenth of the value with conventional control. This makes it possible to connect GTO thyristors in series without selecting the semiconductor components and without adapting or regulating the control devices.
  • the invention is based on the object of specifying a device for the low-inductance connection of a switchable thyristor to its control device, which on the one hand incorporates at least one heat sink of the switchable thyristor and on the other hand considerably simplifies assembly.
  • the threaded rods are screwed circularly in a cathode-side heat sink, the threaded rods not only serve to brace the circuit board with the gate flange by means of the individual elements of the device, but also form an assembly aid for the individual components of this low-inductance connection.
  • the switchable thyristor is centered on the heat sink. After all the components for a low-inductance connection of the switchable thyristor to its control device are clamped together, only the anode-side heat sink needs to be placed on the anode in an axisymmetric manner with respect to the switchable thyristor and this arrangement is Device are clamped. This first embodiment considerably reduces the effort for assembly.
  • both heat sinks of a switchable thyristor are integrated into the device for the low-inductance connection of a switchable thyristor to its control device. That is, only when the stack of components (heat sink, elements of the device, switchable thyristor) are clamped by means of a clamping device, is the low-inductance connection of the switchable thyristor to its control device. So that the gate flange of the switchable thyristor can be clamped to one side of the circuit board, on the one hand a cathode counterpart and an annular spacer and on the other hand an annular insulating piece with a spring arranged in an end recess are provided. When the entire arrangement is clamped, part of the clamping force is transferred to the gate flange by means of the spring which is arranged in the annular recess in the insulating body.
  • the cathode-side heat sink is provided with a recess corresponding to the cathode surface of the thyristor which can be switched off.
  • the cathode counterpart and the annular spacer are no longer required. Due to the recess in the heat sink, the thyristor that can be switched off is centered on the heat sink and thus on the axis of the introduction of the clamping force. The assembly is also simplified.
  • the thyristor which can be switched off has an annular, segmented cathode flange as the control cathode supply.
  • the circuit board of the control device is at this embodiment encompassed by the control flanges of the turn-off thyristor. Only the circular spacer is required between the cathode flange and the cathode-side heat sink. By omitting the cathode counterparts, a so-called dry transition also disappears.
  • FIG. 1 shows a first embodiment of the device according to the invention
  • FIG. 2 shows a first embodiment of a second embodiment of the device according to the invention
  • FIG. 3 shows a second embodiment of the second embodiment according to FIG. 2
  • FIG. 4 shows a third embodiment of the device is shown according to the invention.
  • 2 denotes a cathode-side heat sink, 4 an anode-side heat sink and 6 a thyristor that can be switched off.
  • This switchable thyristor 6, also referred to as a GTO thyristor has an anode 8 and a cathode 10.
  • this GTO thyristor is provided with a gate flange 12.
  • a plurality of threaded rods 14, which are arranged in a circular ring, are screwed into the cathode-side heat sink 2.
  • a cathode counterpart 16 is arranged between the thyristor 6, which can be switched off, and the cooling element 2 on the cathode side.
  • An annular spacer 18 is arranged on this cathode counterpart 16.
  • Punch piece 18 is a printed circuit board 20 of a control device, not shown.
  • This circuit board 20 has a bore 22 corresponding to the thyristor 6 that can be switched off.
  • this device for the low-inductive connection of the GTO thyristor 6 to its control device also has an annular pressure element 24 made of insulating material and a plurality of clamping nuts 26 with which the gate flange 12 of the GTO thyristor 6 and the printed circuit board 20 of a control device by means of the components 2 , 14, 16, 18, 24 and 26 are connected to one another in an electrically conductive manner.
  • the threaded rods 14 are first screwed into the threaded holes provided on the cathode-side heat sink 2. These threaded rods 14, of which six to eighteen, for example, are arranged in a circle, also form an assembly aid.
  • the cathode counterpart 16 is placed on this cathode-side heat sink 2, the threaded rods 14 projecting through bores in the cathode counterpart 16. These bores are also arranged on a circle in the edge region of the circular cathode counterpart 16.
  • the annular spacer 18 is arranged on the cathode counterpart 16, this spacer 18 also having bores corresponding to the threaded rods 14.
  • the circular cathode counterpart 16 and the annular spacer 18 can form a structural unit, as shown in FIG. 1.
  • the circuit board 20 is placed on the spacer 18 and then the GTO thyristor is inserted into the bore 22 of the circuit board 20, the gate flange 12 being on one flat side 28 of the circuit board 20 and the cathode of the GTO thyristor 6 being on the cathode counterpart 16 supports.
  • the annular pressure element 24 is placed on this annular gate flange 12.
  • the individual components 16, 18, 20, 6 and 24 are spatially fixed to one another and centered together to form the heat sink.
  • the gate flange 12 and the printed circuit board 20 are clamped by means of the components 2, 16, 18 and 24 by means of the clamping nuts 26, wherein a locking ring can be arranged between the pressure element 24 and the clamping nuts 26. Then the anode-side heat sink 4 is placed on the anode 8 of the GTO thyristor 6 and the overall arrangement is clamped by means of a tensioning device. As a result, the control connections gate flange 12 and cathode counterpart 16 are electrically conductively connected to the flat sides 28 and 30 of the printed circuit board 20.
  • FIG. 2 shows a first embodiment of a second embodiment.
  • no screw connection is used, as a result of which neither the gate flange 12, the printed circuit board 20 nor the elements of the device have to be drilled.
  • This saves additional post-processing (drilling) of the individual elements and does not weaken the annular areas for a low-inductance connection of the GTO thyristor 6 to its control device.
  • the clamping force of the clamping bandage is used here.
  • an annular insulating piece 32 is provided, which is provided with an end recess 34.
  • a spring 36 is arranged in this annular recess 34.
  • the circular cathode counterpart 16 and the annular spacer 18 can form a structural unit, as shown.
  • GTO thyristor 6 and cathode counterpart 16 must be clamped by means of a clamping device, but also a force has to act on the spring without falling below a prescribed clamping force for the stack, the clamping force must be about the spring force increase.
  • the spring force acts in a ring shape by means of the insulating piece 32 on the gate flange 12, which is pressed in a ring shape on the flat side 28 of the printed circuit board 20.
  • the GTO thyristor 6 is electrically conductively connected by means of its gate flange 12 and by means of its cathode 10, cathode counterpart 16 and spacer 18 to the flat sides 28 and 30 of the printed circuit board 20 of a control device.
  • a cathode-side heat sink 2 with a recess 38 is provided instead of the circular cathode counterpart 16 and the annular spacer 18.
  • This circular recess 38 is dimensioned such that the cathode 10 of the GTO thyristor 6 is partially accommodated.
  • the GTO thyristor 6 is again centered on the line of action of the clamping force without additional measures.
  • This second embodiment thus corresponds to the first embodiment of the second embodiment according to FIG. 2.
  • the jacket surfaces 40 and 42 are provided with ribs 44. This increase in the creepage distance improves the dielectric strength of this arrangement.
  • FIG. 4 shows a third embodiment of the second embodiment according to FIG. 2, a GTO thyristor 6 being provided which, in addition to the gate flange 12, also has an annular segmented cathode flange 46 as a cathode supply having. As a result, a cathode counterpart 16 is no longer required. Only the annular spacer 18 is arranged between the cathode flange 46 and the cathode-side heat sink 2. The segmentation of this cathode flange 46 is obtained by radial slots. Before assembly, the individual segments of the cathode flange 46 are bent away from the gate flange 12.
  • the GTO thyristor 6 with the cathode part can be inserted through the bore 22 in the printed circuit board 20.
  • the segments of the cathode flange 46 are then bent to the flat side 30 of the printed circuit board 20.
  • the circuit board 20 is encompassed by the control flanges 12 and 46 of the GTO thyristor 6.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Thyristors (AREA)

Abstract

L'invention concerne un dispositif destiné au couplage peu inductif d'un thyristor (6), blocable par la gâchette, à son dispositif de commande. Le thyristor (6) blocable par la gâchette présente une bride-gâchette (12) annulaire en guise d'alimentation de la gâchette et son dispositif de commande possède une plaque conductrice (20) en guise de bornes. Cette plaque conductrice (20) est dotée d'un trou (22) correspondant au thyristor blocable par la gâchette et le dispositif possède une contre-cathode (16) et une entretoise (18) annulaire. Selon l'invention, ce dispositif possède également plusieurs tiges filetées (14), un élément de pression (14) annulaire en matériau isolant et plusieurs écrous de blocage (26). Les tiges filetées (14), vissées de façon circulaire dans une plaque de refroidissement (2), assemblent les éléments (16, 18, 20, 12, 24) et les fixent au moyen d'écrous de blocage (26). On obtient ainsi un dispositif de couplage peu inductif d'un thyristor (6), blocable par la gâchette, à son dispositif de commande qui, d'une part, relie au moins une plaque de refroidissement (2, 4) du thyristor et, d'autre part, simplifie considérablement le montage.
PCT/DE1998/000775 1997-03-21 1998-03-16 Procede de couplage peu inductif d'un thyristor, blocable par la gachette, a son dispositif de commande WO1998043296A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP98924013A EP0968531A2 (fr) 1997-03-21 1998-03-16 Procede de couplage peu inductif d'un thyristor, blocable par la gachette, a son dispositif de commande

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19711965.4 1997-03-21
DE1997111965 DE19711965C2 (de) 1997-03-21 1997-03-21 Vorrichtung zur niederinduktiven Anbindung eines abschaltbaren Thyristors an seine Ansteuereinrichtung

Publications (2)

Publication Number Publication Date
WO1998043296A2 true WO1998043296A2 (fr) 1998-10-01
WO1998043296A3 WO1998043296A3 (fr) 1999-03-11

Family

ID=7824217

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Application Number Title Priority Date Filing Date
PCT/DE1998/000775 WO1998043296A2 (fr) 1997-03-21 1998-03-16 Procede de couplage peu inductif d'un thyristor, blocable par la gachette, a son dispositif de commande

Country Status (3)

Country Link
EP (1) EP0968531A2 (fr)
DE (1) DE19711965C2 (fr)
WO (1) WO1998043296A2 (fr)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1614977A1 (de) * 1967-06-12 1971-05-27 Halbleiterwerk Frankfurt Oder Halbleiterbauelement mit einem in einem Gehaeuse eingeschlossenen Halbleiterelement
FR2614469A1 (fr) * 1987-04-24 1988-10-28 Inrets Dispositif de refroidissement, en particulier pour semi-conducteur de puissance
US5168425A (en) * 1991-10-16 1992-12-01 General Electric Company Mounting arrangements for high voltage/high power semiconductors
EP0516416A1 (fr) * 1991-05-30 1992-12-02 Mitsubishi Denki Kabushiki Kaisha Unité de semi-conducteur et méthode pour sa fabrication
EP0588026A2 (fr) * 1992-08-15 1994-03-23 Abb Research Ltd. Dispositif semiconducteur de haute puissance à commande d'extinction
EP0729179A1 (fr) * 1995-02-17 1996-08-28 ABB Management AG Boîtier de contact par pression pour composant semi-conducteur
EP0746021A2 (fr) * 1995-05-31 1996-12-04 Mitsubishi Denki Kabushiki Kaisha Dispositif à semiconducteur ayant une connexion par compression et procédé pour sa fabrication

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1614977A1 (de) * 1967-06-12 1971-05-27 Halbleiterwerk Frankfurt Oder Halbleiterbauelement mit einem in einem Gehaeuse eingeschlossenen Halbleiterelement
FR2614469A1 (fr) * 1987-04-24 1988-10-28 Inrets Dispositif de refroidissement, en particulier pour semi-conducteur de puissance
EP0516416A1 (fr) * 1991-05-30 1992-12-02 Mitsubishi Denki Kabushiki Kaisha Unité de semi-conducteur et méthode pour sa fabrication
US5168425A (en) * 1991-10-16 1992-12-01 General Electric Company Mounting arrangements for high voltage/high power semiconductors
EP0588026A2 (fr) * 1992-08-15 1994-03-23 Abb Research Ltd. Dispositif semiconducteur de haute puissance à commande d'extinction
EP0729179A1 (fr) * 1995-02-17 1996-08-28 ABB Management AG Boîtier de contact par pression pour composant semi-conducteur
EP0746021A2 (fr) * 1995-05-31 1996-12-04 Mitsubishi Denki Kabushiki Kaisha Dispositif à semiconducteur ayant une connexion par compression et procédé pour sa fabrication

Also Published As

Publication number Publication date
EP0968531A2 (fr) 2000-01-05
DE19711965A1 (de) 1998-09-24
DE19711965C2 (de) 1999-01-14
WO1998043296A3 (fr) 1999-03-11

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