WO1998014989A1 - Element de memoire a condensateur polymere - Google Patents

Element de memoire a condensateur polymere Download PDF

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Publication number
WO1998014989A1
WO1998014989A1 PCT/DE1997/001666 DE9701666W WO9814989A1 WO 1998014989 A1 WO1998014989 A1 WO 1998014989A1 DE 9701666 W DE9701666 W DE 9701666W WO 9814989 A1 WO9814989 A1 WO 9814989A1
Authority
WO
WIPO (PCT)
Prior art keywords
memory cell
storage
capacitor
selection transistor
polymer
Prior art date
Application number
PCT/DE1997/001666
Other languages
German (de)
English (en)
Inventor
Walter Hartner
Günther SCHINDLER
Carlos Mazure-Espejo
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of WO1998014989A1 publication Critical patent/WO1998014989A1/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor

Abstract

L'invention concerne un élément de mémoire (1) comportant un transistor de sélection (2) ainsi qu'un condensateur (4) relié à ce dernier, le condensateur (4) renfermant un diélectrique (8) constitué d'un polymère présentant notamment des caractéristiques ferro-électriques.
PCT/DE1997/001666 1996-09-30 1997-08-07 Element de memoire a condensateur polymere WO1998014989A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19640239.5 1996-09-30
DE19640239A DE19640239A1 (de) 1996-09-30 1996-09-30 Speicherzelle mit Polymerkondensator

Publications (1)

Publication Number Publication Date
WO1998014989A1 true WO1998014989A1 (fr) 1998-04-09

Family

ID=7807399

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1997/001666 WO1998014989A1 (fr) 1996-09-30 1997-08-07 Element de memoire a condensateur polymere

Country Status (3)

Country Link
DE (1) DE19640239A1 (fr)
TW (1) TW365066B (fr)
WO (1) WO1998014989A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002043071A1 (fr) * 2000-11-27 2002-05-30 Thin Film Electronics Asa Circuit de memoire ferroelectrique et son procede de fabrication
WO2003046922A2 (fr) * 2001-11-16 2003-06-05 Infineon Technologies Ag Montage a semi-conducteurs avec transistors a base de semi-conducteurs organiques et de cellules de memoire d'ecriture-lecture non volatiles
US6872969B2 (en) 2002-01-09 2005-03-29 Samsung Sdi Co., Ltd. Non-volatile memory device and matrix display panel using the same

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60220912T2 (de) * 2001-05-07 2008-02-28 Advanced Micro Devices, Inc., Sunnyvale Speichervorrichtung mit einem sich selbst einbauenden polymer und verfahren zur herstellung derselben
US6873540B2 (en) 2001-05-07 2005-03-29 Advanced Micro Devices, Inc. Molecular memory cell
AU2002340795A1 (en) 2001-05-07 2002-11-18 Advanced Micro Devices, Inc. Reversible field-programmable electric interconnects
AU2002340793A1 (en) 2001-05-07 2002-11-18 Coatue Corporation Molecular memory device
WO2002091494A1 (fr) 2001-05-07 2002-11-14 Advanced Micro Devices, Inc. Element de commutation ayant un effet memoire
CN1276518C (zh) 2001-05-07 2006-09-20 先进微装置公司 使用复合分子材料的浮置栅极存储装置
US6858481B2 (en) 2001-08-13 2005-02-22 Advanced Micro Devices, Inc. Memory device with active and passive layers
US6768157B2 (en) 2001-08-13 2004-07-27 Advanced Micro Devices, Inc. Memory device
US6806526B2 (en) 2001-08-13 2004-10-19 Advanced Micro Devices, Inc. Memory device
DE60130586T2 (de) 2001-08-13 2008-06-19 Advanced Micro Devices, Inc., Sunnyvale Speicherzelle
US6838720B2 (en) 2001-08-13 2005-01-04 Advanced Micro Devices, Inc. Memory device with active passive layers
US7012276B2 (en) 2002-09-17 2006-03-14 Advanced Micro Devices, Inc. Organic thin film Zener diodes

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60113474A (ja) * 1983-11-25 1985-06-19 Nippon Telegr & Teleph Corp <Ntt> 半導体装置及びその製造方法
US4860254A (en) * 1986-01-31 1989-08-22 Bayer Aktiengesellschaft Non-volatile electronic memory
US5356500A (en) * 1992-03-20 1994-10-18 Rutgers, The State University Of New Jersey Piezoelectric laminate films and processes for their manufacture

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5423285A (en) * 1991-02-25 1995-06-13 Olympus Optical Co., Ltd. Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60113474A (ja) * 1983-11-25 1985-06-19 Nippon Telegr & Teleph Corp <Ntt> 半導体装置及びその製造方法
US4860254A (en) * 1986-01-31 1989-08-22 Bayer Aktiengesellschaft Non-volatile electronic memory
US5356500A (en) * 1992-03-20 1994-10-18 Rutgers, The State University Of New Jersey Piezoelectric laminate films and processes for their manufacture

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 009, no. 266 (E - 352) 23 October 1985 (1985-10-23) *
YAMAUCHI N: "A METAL-INSULATOR-SEMICONDUCTOR (MIS) DEVICE USING A FERROELECTRIC POLYMER THIN FILM IN THE GATE INSULATOR", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 25, no. 4, PART 1, April 1986 (1986-04-01), pages 590 - 594, XP000021841 *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002043071A1 (fr) * 2000-11-27 2002-05-30 Thin Film Electronics Asa Circuit de memoire ferroelectrique et son procede de fabrication
US6734478B2 (en) 2000-11-27 2004-05-11 Thin Film Electronics Asa Ferroelectric memory circuit and method for its fabrication
AU2002223165B2 (en) * 2000-11-27 2005-02-17 Thin Film Electronics Asa A ferroelectric memory circuit and method for its fabrication
CN100342453C (zh) * 2000-11-27 2007-10-10 薄膜电子有限公司 铁电存储电路及其制造方法
WO2003046922A2 (fr) * 2001-11-16 2003-06-05 Infineon Technologies Ag Montage a semi-conducteurs avec transistors a base de semi-conducteurs organiques et de cellules de memoire d'ecriture-lecture non volatiles
WO2003046922A3 (fr) * 2001-11-16 2003-08-14 Infineon Technologies Ag Montage a semi-conducteurs avec transistors a base de semi-conducteurs organiques et de cellules de memoire d'ecriture-lecture non volatiles
US7208823B2 (en) 2001-11-16 2007-04-24 Infineon Technologies Ag Semiconductor arrangement comprising transistors based on organic semiconductors and non-volatile read-write memory cells
US6872969B2 (en) 2002-01-09 2005-03-29 Samsung Sdi Co., Ltd. Non-volatile memory device and matrix display panel using the same
DE10300746B4 (de) * 2002-01-09 2008-02-07 Samsung SDI Co., Ltd., Suwon Nichtflüchtiges Speicherelement und Anzeigematrizen sowie deren Anwendung

Also Published As

Publication number Publication date
DE19640239A1 (de) 1998-04-02
TW365066B (en) 1999-07-21

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