WO1998013663A1 - Sonde pour microscopie a forces atomiques - Google Patents

Sonde pour microscopie a forces atomiques Download PDF

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Publication number
WO1998013663A1
WO1998013663A1 PCT/EP1997/004840 EP9704840W WO9813663A1 WO 1998013663 A1 WO1998013663 A1 WO 1998013663A1 EP 9704840 W EP9704840 W EP 9704840W WO 9813663 A1 WO9813663 A1 WO 9813663A1
Authority
WO
WIPO (PCT)
Prior art keywords
force microscope
tip
probe
cantilever
shielding electrode
Prior art date
Application number
PCT/EP1997/004840
Other languages
German (de)
English (en)
Inventor
Ewald Guenther
Rainer Leuschner
Olaf Ohlsson
Original Assignee
Siemens Aktiengesellschaft
Nanosensors Dr. Olaf Wolter Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft, Nanosensors Dr. Olaf Wolter Gmbh filed Critical Siemens Aktiengesellschaft
Publication of WO1998013663A1 publication Critical patent/WO1998013663A1/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
    • G01Q60/38—Probes, their manufacture, or their related instrumentation, e.g. holders
    • G01Q60/40—Conductive probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
    • G01Q70/02—Probe holders
    • G01Q70/04—Probe holders with compensation for temperature or vibration induced errors

Definitions

  • the invention relates to a force microscope probe with an electrically conductive spring beam and an electrically conductive probe tip.
  • X-ray lithography offers the possibility of producing such small structures, with which - due to the shorter wavelength - dimensions below 100 nm can be imaged. However, this results in problems with the required masks and with the positioning. This is not the case with electron and ion beam lithography. Since these are direct-writing methods, they do not require masks. In electron and ion beam lithography, structures down to 10 nm can be produced with high-energy particles. However, complex vacuum systems and beam guidance systems are required for this. In addition, there are problems due to electron scattering, which in some cases lead to radiation damage in the substrate.
  • STM Scanning Tunneling Microscopy
  • SFM Scanning Force Microscopy
  • a probe that has a tip with a radius of curvature of 10 to 100 nm is passed over the sample surface.
  • This tip is located at the end of a rectangular or triangular cantilever that is a few hundred micrometers long and approx. 0.5 to 2 ⁇ m thick.
  • Repulsive or attractive forces between specimen and tip bend the cantilevers accordingly.
  • the bending of the cantilever is measured using optical or other methods and allows the shape of the sample surface to be recorded on a nanometer scale.
  • the probe tip is used as a source for highly localized, low-energy electrons in order to expose resist materials - similar to electron beam lithography.
  • Beam guidance and focusing systems are not required due to the near field.
  • work can be carried out under ambient conditions, so that complex vacuum systems are not required.
  • there are none Radiation damage is to be expected because the electron energy is too low for this.
  • the electron-sensitive lacquer is applied to a conductive substrate and an electrical voltage is applied between the substrate and a conductive force microscope probe. Electrons then flow between the probe tip and the substrate and cause chemical reactions. This creates a latent image, which is transformed into real structures in a subsequent development step.
  • the thin insulating resist layer (dielectric) is located between the conductive force microscope probe and the conductive substrate.
  • This arrangement thus represents an electrical capacitor which is charged by the application of an electrical voltage, in the present case the exposure voltage.
  • the charge leads to an electrostatic attraction between the force microscope probe and the substrate, which significantly increases the contact force of the tip on the lacquer. Without applied voltage, the contact force is determined by the much smaller forces that result from the elastic bending of the cantilever.
  • the surface hardness of the lacquer is high enough to prevent the tip from penetrating due to the elastic forces. However, the much higher electrostatic forces cause the tip to penetrate the entire paint layer.
  • the object of the invention is to design a force microscope probe of the type mentioned at the outset, which has a spring bar and a probe tip, in such a way that the electrostatic forces which occur during operation are largely eliminated.
  • this is intended to prevent the resist layer from being mechanically damaged during the exposure by the movement of the probe tip when structuring resist layers by means of scanning force microscopy.
  • the spring bar is provided with a shielding electrode and that an electrically insulating layer is arranged between the shielding electrode and the spring bar.
  • a force microscopy sensor of the usual type consists of a cantilever with an integrated tip at the end.
  • both elements, the spring bar and the tip are usually conductive and thus generate electrostatic forces.
  • the force contributions from the cantilever and tip are to be estimated below.
  • the length and width of the cantilever are relatively large compared to the working distance between the cantilever and the conductive sample surface, so that this arrangement can be regarded as a plate capacitor to a good approximation.
  • the distance d is equal to the sum of the height of the tip (approx. Approx.
  • F ⁇ i ⁇ tat ⁇ ⁇ o ⁇ U 2 tan 2 ( ⁇ ) - [ln (l + R / s-tan ( ⁇ )) -R / s-tan ( ⁇ ) + R].
  • the opening angle is approx. 35 ° and thus the radius R approx. 4 ⁇ m. This results in the electrostatic attraction caused by the tip
  • the principle of the shielding electrode integrated in the force microscope probe can be implemented in various ways. It is essential that the working electrode, which brings about the current supply to the tip, is electrically separated from the shielding electrode. Either the silicon of the cantilever and tip itself or a metal layer can be used as the working electrode, especially if the cantilever and tip are made of silicon nitride.
  • Metals that do not form an insulating oxide layer are used for the working electrode. These are in particular precious metals such as gold, platinum and palladium. It is also advantageous to use an amorphous carbon-containing layer (great hardness and sufficient electrical conductivity), as is proposed in German published patent application DE 195 26 775 AI as a coating for atomic force microscopy probes and scanning tunneling microscopy tips.
  • the electrically insulating layer which advantageously consists of silicon dioxide or of materials such as polyimide, polybenzoxazole, benzocyclobutene and organic spin-on glasses, advantageously has a layer thickness of> 50 nm, preferably> 500 nm given sufficient dielectric strength. If a layer of one of the materials mentioned is used for electrical insulation, there is a metal layer between this layer and the spring bar as the working electrode. Preferred embodiments of the force microscope probe according to the invention are described in more detail below.
  • the insulation layer is produced by oxidation of the silicon.
  • a thin metal layer for example made of chrome, is then deposited on this oxide layer as a shielding electrode.
  • the Si tip is freed of metal and oxide.
  • the working electrode is made of metal
  • this metallic working electrode is first applied to the probe.
  • the cantilever and tip can either be coated over the entire surface or a narrow stripline is structured.
  • the stripline has the advantage that stray fields are also shielded by the significantly larger shielding electrode.
  • the metallic working electrode is then provided with an insulation layer, for example made of polyimide or polybenzoxazole.
  • the metallic shielding electrode is then applied and the probe tip is then exposed.
  • the shielding electrode - with the appropriate geometry - completely eliminates the force contribution of the cantilever. Only the much smaller portion of the tip remains.

Abstract

Sonde pour microscopie à forces atomiques comprenant une lame élastique électro-conductrice et une pointe de sonde électroconductrice, caractérisée en ce que la lame élastique est munie d'une électrode-écran, et en ce qu'une couche électriquement isolante est disposée entre l'électrode-écran et la lame élastique. De cette manière, les forces électrostatiques se présentant lors du fonctionnement peuvent être éliminées.
PCT/EP1997/004840 1996-09-23 1997-09-05 Sonde pour microscopie a forces atomiques WO1998013663A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19638977A DE19638977A1 (de) 1996-09-23 1996-09-23 Kraftmikroskopiesonde
DE19638977.1 1996-09-23

Publications (1)

Publication Number Publication Date
WO1998013663A1 true WO1998013663A1 (fr) 1998-04-02

Family

ID=7806603

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP1997/004840 WO1998013663A1 (fr) 1996-09-23 1997-09-05 Sonde pour microscopie a forces atomiques

Country Status (3)

Country Link
DE (1) DE19638977A1 (fr)
TW (1) TW360894B (fr)
WO (1) WO1998013663A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1135691A1 (fr) * 1998-11-06 2001-09-26 Trek, Inc. Detecteur de force electrostatique comportant une partie en porte-a-faux et un ecran de protection

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4124871A1 (de) * 1990-07-26 1992-01-30 Olympus Optical Co Messvorrichtung in einem abtastsonden-mikroskop
EP0480645A1 (fr) * 1990-10-09 1992-04-15 Canon Kabushiki Kaisha Capteur du type cantilever, microscope à effet tunnel et dispositif de traitement d'information utilisant ce capteur
WO1994029894A1 (fr) * 1993-06-03 1994-12-22 Park Scientific Instruments Corporation Piece piezoresistante en porte-a-faux a pointe solidaire venue d'une piece
US5450746A (en) * 1993-10-12 1995-09-19 The University Of North Carolina Constant force stylus profiling apparatus and method
JPH0850872A (ja) * 1994-08-08 1996-02-20 Canon Inc 試料表面の観察方法、原子間力顕微鏡、微細加工方法および微細加工装置
EP0750298A2 (fr) * 1995-06-19 1996-12-27 Canon Kabushiki Kaisha Sonde et milieu d'enregistrement, pour appareil d'enregistrement d'information, et appareil l'utilisant

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4124871A1 (de) * 1990-07-26 1992-01-30 Olympus Optical Co Messvorrichtung in einem abtastsonden-mikroskop
EP0480645A1 (fr) * 1990-10-09 1992-04-15 Canon Kabushiki Kaisha Capteur du type cantilever, microscope à effet tunnel et dispositif de traitement d'information utilisant ce capteur
WO1994029894A1 (fr) * 1993-06-03 1994-12-22 Park Scientific Instruments Corporation Piece piezoresistante en porte-a-faux a pointe solidaire venue d'une piece
US5450746A (en) * 1993-10-12 1995-09-19 The University Of North Carolina Constant force stylus profiling apparatus and method
JPH0850872A (ja) * 1994-08-08 1996-02-20 Canon Inc 試料表面の観察方法、原子間力顕微鏡、微細加工方法および微細加工装置
EP0750298A2 (fr) * 1995-06-19 1996-12-27 Canon Kabushiki Kaisha Sonde et milieu d'enregistrement, pour appareil d'enregistrement d'information, et appareil l'utilisant

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 096, no. 006 28 June 1996 (1996-06-28) *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1135691A1 (fr) * 1998-11-06 2001-09-26 Trek, Inc. Detecteur de force electrostatique comportant une partie en porte-a-faux et un ecran de protection
EP1135691A4 (fr) * 1998-11-06 2002-03-13 Trek Inc Detecteur de force electrostatique comportant une partie en porte-a-faux et un ecran de protection

Also Published As

Publication number Publication date
TW360894B (en) 1999-06-11
DE19638977A1 (de) 1998-03-26

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