WO1998013300A1 - Ferroelectric material, method of manufacturing the same, semiconductor memory, and method of manufacturing the same - Google Patents
Ferroelectric material, method of manufacturing the same, semiconductor memory, and method of manufacturing the same Download PDFInfo
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- WO1998013300A1 WO1998013300A1 PCT/JP1997/003455 JP9703455W WO9813300A1 WO 1998013300 A1 WO1998013300 A1 WO 1998013300A1 JP 9703455 W JP9703455 W JP 9703455W WO 9813300 A1 WO9813300 A1 WO 9813300A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 82
- 239000000463 material Substances 0.000 title claims abstract description 64
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 93
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 55
- 239000001301 oxygen Substances 0.000 claims abstract description 55
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 55
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 52
- 229910052702 rhenium Inorganic materials 0.000 claims abstract description 41
- 230000003647 oxidation Effects 0.000 claims abstract description 15
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 15
- 238000001771 vacuum deposition Methods 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 35
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- 150000002602 lanthanoids Chemical class 0.000 description 5
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- 238000010586 diagram Methods 0.000 description 4
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910009580 YMnO Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 229910009202 Y—Mn Inorganic materials 0.000 description 2
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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- C01G45/00—Compounds of manganese
- C01G45/12—Manganates manganites or permanganates
- C01G45/1221—Manganates or manganites with a manganese oxidation state of Mn(III), Mn(IV) or mixtures thereof
- C01G45/125—Manganates or manganites with a manganese oxidation state of Mn(III), Mn(IV) or mixtures thereof of the type[MnO3]n-, e.g. Li2MnO3, Li2[MxMn1-xO3], (La,Sr)MnO3
- C01G45/1264—Manganates or manganites with a manganese oxidation state of Mn(III), Mn(IV) or mixtures thereof of the type[MnO3]n-, e.g. Li2MnO3, Li2[MxMn1-xO3], (La,Sr)MnO3 containing rare earth, e.g. La1-xCaxMnO3, LaMnO3
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
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- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
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- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
Definitions
- the present invention relates to a ferroelectric material capable of forming a nonvolatile memory, a thin film capacitor, an electro-optical device, and the like, a method of manufacturing a thin film thereof, and a semiconductor memory device using the material. More specifically, the present invention relates to a ferroelectric material having a basic structure of ReMnO 3 (where R e is a lanthanide element containing Y, the same applies hereinafter), a method for producing a thin film thereof, and a semiconductor memory device using the thin film and a method for producing the same. . Background art
- a typical memory that detects a change in resistance of a semiconductor layer due to spontaneous polarization of a ferroelectric film includes a metal film-ferroelectric film-semiconductor layer structure (hereinafter, referred to as an MF). FET called S structure). This is a case where a ferroelectric material is used for the gate insulating film. Writing is performed by forming an inversion layer. This type of memory allows nondestructive reading, which is advantageous for increasing the number of rewrites.
- reference numeral 21 denotes a p-type semiconductor substrate
- 22 and 23 denote source and drain regions formed by introducing n + impurities, respectively
- 26 denotes a source region 22 and a drain
- a ferroelectric film 27 and a gate electrode 28 are formed on the channel region 26 in the channel region sandwiched between the regions 23.
- 4A shows a state where a positive potential is applied to the gate electrode 28 and the gate electrode 28 is turned on
- FIG. 4B shows a state where the gate electrode 28 is turned on.
- a negative potential is applied to the pole 28, indicating an off state.
- this ferroelectric film 27 B a Ti Oq P ZT CP b CZ r, — Ti
- a ferroelectric film is formed on a semiconductor substrate 21 made of Si.
- the control electrode, the ferroelectric film from above, Floating Nguge Ichito, gate oxide film (S i 0 9), has been considered that the MFM IS structure laminated with S i board .
- the ferroelectric film can be formed on the metal material of the electrode, the ferroelectric film can be formed on the electrode with good consistency by selecting the metal material.
- ferroelectric material other than R e Mn On is used as an oxide with a vesicular structure other than Re Mn On, as described above, it is attempted to form a ferroelectric film directly on Si. Also, the surface of the Si substrate is oxidized to Si 0. An oxide film such as the one intervenes. Since this oxide film has a small dielectric constant and consumes more voltage than a ferroelectric film having a large dielectric constant, there are problems such as a need for a high write voltage. Moreover, conventionally used ferroelectrics having an oxide perovskite structure may have oxygen vacancies, which may cause valence fluctuation, and may increase space charge. Therefore, there is a problem that ferroelectric characteristics are deteriorated.
- R e Mn 03 an oxide of the lanthanide-based elements Re and Mn containing Y, is a material that has ferroelectric properties and has advantages such as a small dielectric constant.
- ReMnO 3 has not been put to practical use because its film forming conditions are difficult and it is difficult to form a film with a perfect crystal structure.
- the present invention has been made in view of such circumstances, the basic structure of R eMn0 3, to improve further ferroelectric properties, excellent crystallinity, improving its properties when used like a semiconductor memory
- An object of the present invention is to provide a ferroelectric material that can be used.
- the ferroelectric film containing the R e Mn 0 3 with improved ferroelectric properties and basic structure, specifically of the ferroelectric material can be deposited such as a semiconductor substrate It is to provide a simple film formation method.
- Still another object of the present invention is to provide a semiconductor memory device using the ferroelectric material according to the present invention and a method for manufacturing the same. Disclosure of the invention
- the present inventors have result of extensive study to obtain a ferroelectric film having a basic structure excellent R eMn0 3 ferroelectric properties such as S i substrate, the ratio of R e and Mn is 1: In 1 However, it has been found that one of them is included in excess of the other at a limit of 20 at%, which can make the composition uniform, reduce the leak current, and improve the ferroelectric characteristics.
- Re means a lanthanide element including Y, Er, Ho, Tm, Yb, Lu, etc.
- at% is atomic%, for example, an excess of Re force of 20 at% means It means that Re and Mn are 1.2: 1 in atomic%.
- the basic structure R eMn0 3 The present inventors have further improved ferroelectric properties Ferroelectric film result of intensive studies to obtain a to, R e Mn 0 3 has a small bar Ndogiyappu has a property that the leakage current is likely to increase by the presence of some Kiyaria, moreover p-type And found that the addition of a tetravalent element can make the structure finer and more uniform and reduce the leakage current.
- La is particularly preferred in terms of ionic radius.
- a tetravalent element means an element that can be converted into a tetravalent ion when ionized.
- the oxygen partial pressure in the film forming apparatus is made lower than usual, and a non-oxide target made of an alloy of Re and Mn is used as a target, and only in the vicinity of the substrate surface on which the ferroelectric film is formed.
- a non-oxide target made of an alloy of Re and Mn is used as a target, and only in the vicinity of the substrate surface on which the ferroelectric film is formed.
- the oxidizing source here, oxygen, ozone, N 2 0, radical ion source such as Gas, ion, etc., that can oxidize the element of the other party.
- the partial pressure of oxygen refers to the partial pressure of oxygen in a vacuum evaporation apparatus in a state where an oxidation source is sprayed.
- a source of Re and Mn is disposed in a vacuum deposition apparatus so as to face a substrate on which a ferroelectric film is formed. blowing an oxidizing source to the film forming surface, the evaporation of metal in the source source at a partial pressure of oxygen in the vacuum deposition apparatus 1 0 ⁇ ⁇ 0 rr below, the basic structure of R e M n O n ferroelectric
- the method is characterized in that a body material is formed on the substrate surface.
- a target and a substrate are disposed in a container so as to face each other, and the target is a non-oxide target made of an alloy of Re and Mn.
- the target is a non-oxide target made of an alloy of Re and Mn.
- a target and a substrate are arranged in a container so as to face each other, and the target is a non-oxide comprising an alloy of Re and Mn.
- using target by the oxygen partial pressure in the vessel was 1 0 one 4 T 0 rr below, for applying a voltage to the motor one Getting Bok while blowing an oxidizing source to the film forming surface of the substrate, the basic structure There characterized by depositing the ferroelectric material of R e M n 0 3 on the substrate surface.
- a non-oxide target is used as a target for laser ablation or sputtering, and the oxygen partial pressure in the container is reduced to form a target.
- the composition of the target does not change, and the oxide of the Re-rich / Mn-rich is not generated, so that the ferroelectric material having good crystallinity and excellent dielectric properties is obtained.
- a body membrane is obtained.
- the semiconductor memory device of the present invention is a semiconductor memory device having a ferroelectric film on the surface of a semiconductor substrate, wherein the ferroelectric film has a basic structure of ReMn0, and one of Re and Mn is It consists of a ferroelectric material that is excessively contained up to 20 at% and a ferroelectric material to which Z or a tetravalent element is added.
- the method of manufacturing a semiconductor memory device is a method of manufacturing a semiconductor memory device having a ferroelectric film on the surface of a semiconductor substrate, wherein a source of Re and Mn is opposed to the semiconductor substrate in a vacuum evaporation apparatus. disposed, the partial pressure of oxygen in the vacuum evaporation apparatus is less than 1 0- 3 T 0 rr, by evaporating a metal of the source sources while blowing an oxidizing source to the film forming surface of the substrate, wherein the strong This is to obtain a dielectric film.
- Another method of manufacturing a semiconductor memory device of the present invention is a method of manufacturing a semiconductor memory device having a ferroelectric film on the surface of a semiconductor substrate, comprising a non-oxide target made of an alloy of Re and Mn.
- the semiconductor substrate is disposed in the container so as to be opposed to the container, and the oxygen partial pressure in the container is set to 10 _ ⁇ rr rr or less, and an oxidizing source is sprayed on the film-forming surface of the semiconductor substrate to form the overnight getter.
- the ferroelectric film is obtained by irradiating a laser and forming a ferroelectric material having a basic structure of ReMnOg on the surface of the semiconductor substrate.
- Still another method of manufacturing the semiconductor memory device of the present invention is a method of manufacturing a semiconductor memory device having a ferroelectric film on the surface side of a semiconductor substrate, comprising a non-oxide target made of an alloy of Re and Mn and a semiconductor substrate.
- a non-oxide target made of an alloy of Re and Mn and a semiconductor substrate.
- the partial pressure of oxygen in the container is set to 10 4 Torr or less, and a voltage is applied to the target while blowing an oxidizing source onto the film formation surface of the semiconductor substrate. It is sputtered by one in which the basic structure obtain the ferroelectric film by forming a ferroelectric material R eMn0 3 in the semi-conductor substrate surface.
- FIG. 1 is a schematic explanatory view of a vacuum evaporation apparatus for forming a ferroelectric film of the present invention.
- FIG. 2 is a schematic explanatory view of forming a ferroelectric film of the present invention by laser ablation.
- FIG. 3 is a diagram showing a structural example of a semiconductor memory device to which the ferroelectric material of the present invention is applied.
- FIG. 4 is an operation explanatory diagram of a conventional semiconductor memory device using a ferroelectric film.
- the natural oxide film on the Si substrate in contact with the ferroelectric film can be reduced, and a voltage can be effectively applied to the ferroelectric film.
- the dielectric constant is as low as about 20, it is effective for ferroelectric films when used as a device of the MF IS structure (a structure in which an insulating film is formed between a ferroelectric film and a semiconductor substrate). Voltage can be applied.
- Zn0 When used in a floating gate type (the above-mentioned MFMIS structure), Zn0 whose resistance is reduced by adding a trivalent element can be used as an electrode.
- This Zn 0 has advantages such as easy c-axis orientation on any substrate and easy etching.
- the ferroelectric film to be formed becomes a Re-rich or Mn-rich oxide film due to oxidation of the source source Re or Mn alone.
- the surface of the film formation surface becomes amorphous, and it is not possible to stably form a completely crystalline thin film, and the film is practically used in semiconductor memory devices and thin film capacitors.
- the present inventors have made intensive studies for film formation such as a semiconductor substrate in a stable thin film of good structure crystalline R eMn0 3, as described above, R e and Mn is easily oxidized , or higher oxygen partial pressure in the vapor deposition apparatus in the case of a vacuum deposition method, the R eMn0 3 as film formation method with target, the film formation method of evaporating oxygen from the raw materials, even if the film-forming apparatus Even if the oxygen partial pressure inside is reduced, the target surface composition shifts due to the effect of the evaporated oxygen.
- the oxygen partial pressure of the above is less than 1 0- 6 T orr is, without generating an oxide of one layer R e Li Tutsi and Mn Li Tutsi, excellent crystallinity basic structure R e Mn 0 3 This is preferable because a ferroelectric film of this type can be formed.
- the film forming apparatus be partial pressure 10- 4 T 0 rr hereinafter oxygen, to prevent the formation of individual oxides of R e and Mn in the middle deposition This is preferable because a ferroelectric film having more excellent crystallinity and excellent ferroelectric properties can be formed.
- FIG. 1 shows an example of YMnO using a vacuum deposition apparatus called the MBE (molecular beam epitaxy) method.
- FIG. 4 is a schematic explanatory diagram for forming a film.
- 1 is a vacuum chamber
- 2 and 3 are source sources each filled with Y and Mn and provided with a heater and a shutter (not shown)
- 4 is a silicon source for forming a ferroelectric film, for example, silicon.
- the substrate 5 is composed of YMnO formed on the surface thereof, and 6 is an oxidation source supply path for supplying an oxidation source such as oxygen and ozone.
- a substrate 4 on which a ferroelectric film is to be formed is set in the vacuum chamber 1, and the crucibles of the source sources 2 and 3 are filled with Y and Mn, respectively. 10- 9 to rr you to the following oxygen partial pressure. Then, the temperature of the substrate 4 is set at about 700 ° C., and the outlets of the source sources 2 and 3 are closed with a shutter (not shown), and heating is performed so that Y and Mn are in a molten state. Then, blowing oxidizing source to the substrate surface, toward the Y and Mn of the substrate 4 by opening the shutter evening source source 2, 3 while the partial pressure of oxygen in the tea Nba 1 to 10 one 4 ⁇ 10 _6 the To rr about Splash.
- the partial pressure is 10- 3 T 0 rr about following the oxygen partial pressure of oxygen in the vacuum Chiya Nba 1, more preferably 10 "6 T orr about
- the feature is that it is performed as follows.
- FIG. 2 is a schematic illustration of forming a YMn0 3 by laser ablation over Chillon method.
- reference numerals 4 to 6 denote the same parts as in FIG. 1
- reference numeral 7 denotes a non-oxide target such as a Y-Mn alloy
- reference numeral 8 denotes a laser light source, for example, having an energy density of 0.5 to 2 ' / st. the laser beam from the 2 in the 5 to 20 ⁇ 1 2 of pulse excimer one seat can be used.
- Reference numeral 9 denotes a bloom generated when the target 7 is irradiated with a laser pulse.
- This laser ablation method is characterized in that a non-oxide target of a Y-Mn alloy is used as a target, and an oxide thin film is formed while spraying an oxidation source on the surface of the substrate on which a film is formed. is there. That is, when the oxide target is used, there is a problem that the composition of the film to be formed changes because the composition of the target changes, but by using the non-oxide target according to the present invention, No change in composition of target, crystallinity Can be formed.
- the oxygen partial pressure in the growth chamber to about 10- 4 to 10 _5 T orr, and the temperature of the substrate 4 to about 70 0 ° C, the results obtained by 24000 pulses grow laser beam described above, 0.3 to 1 strong film dielectric consisting of about ⁇ thickness of ⁇ ⁇ ⁇ ⁇ crystals were formed.
- the target is oxidized and the composition is not changed due to the oxidation.
- the oxygen content in the film forming apparatus should be 10 to 2 T 0 rr or less, more preferably 10 to 4 T orr or less, and more than 10 _ ° T orr. It is desirable to grow the ferroelectric film while spraying an oxidizing source onto the surface of the substrate 4 under pressure.
- the sputtering method using a sputter ring is schematically similar to the apparatus shown in FIG. 2, but instead of irradiating a laser beam, the substrate and the target are exposed to an inert gas atmosphere such as Ar. It is different in that a high voltage is applied between them and the inert gas is ionized and the target element is scattered.
- the non-oxide target Bok used in this case also evening one rodents DOO 7, the oxygen partial pressure in the film forming instrumentation ⁇ not more than 1 0- 4 T orr, the oxidizing source to the film forming surface of the substrate
- the feature is that the film is formed while spraying.
- the substrate temperature is set to 7 00 ° about C, and the oxygen partial pressure in the chamber of the film deposition apparatus 1 0 one third to one 0- 4
- the film was formed at T 0 rr.
- It is preferable lower limit of the oxygen partial pressure is not less than about 1 0- 8 T orr.
- the present inventors have further proposed that, for use as a memory or a thin film capacitor, As a result of further intensive studies to improve characteristics such as reduction in leakage current, the formation of an amorphous layer on the surface was suppressed by setting the atomic ratio of YZMn to a value greater than 1 and less than 1.2 or less than 1 and 0.8 or more. As a result, it was found that fine uniformity of the grains was obtained, the frequency dispersion of the dielectric constant was reduced, and the leak current was also reduced. This R eMn0 3 has a small bar down Dogiyappu is due to also increases the leakage current by the presence of some Kiyaria.
- the deposition of the ferroelectric film made of YM n 0 3 having such a composition in the vacuum evaporation method described above, it may be Re to adjusting the amount of evaporation of the source source Y and Mn, Rezaabure one
- the basic structure in which the ratio of Y and Mn is shifted at the same ratio as that of the target is ⁇ ⁇ ⁇ A dielectric film is obtained.
- ReMno 3 By adding this tetravalent element or replacing a part of Y with a tetravalent element, ReMno 3 has a small band gap, and the leakage current increases even with the presence of some carriers. Easy, but the structure becomes fine and uniform, and the leakage current does not decrease.
- the tetravalent element is the basic structure with the addition of the YM n 0 3 ferroelectric film at a
- a source source of a tetravalent element such as La is further prepared, and the evaporation amount is controlled to be evaporated together with Y or Mn.
- a tetravalent element such as La must be further added to Y and Mn when preparing the above-mentioned target made of an alloy of Y and Mn.
- ReMnO ⁇ By evaporating the metal, one of the aforementioned Re and Mn is contained in excess of the other by up to 20 at%, and a part of a tetravalent element is added to Z or Re and Mn to evaporate.
- ReMnO ⁇ With the basic structure of ReMnO ⁇ , additional tetravalent elements are added Is, Moshiku can be deposited part of R e is substituted with tetravalent element, the basic structure is a ferroelectric material of R e M n 0 3 on the substrate surface.
- a method of forming the ferroelectric film by laser ablation with a target containing Re and Mn facing a substrate on which a ferroelectric film is formed By making the content ratio of Re and Mn of the get different, and / or by using a material to which a tetravalent element is further added, one of the Re and Mn is 20 at. % Or a composition in which Z or a further tetravalent element is added, or a part of R e is replaced by a tetravalent element, and the basic structure is R e M the n 0 3 of the ferroelectric material can be deposited on the substrate surface by laser ablation over to down method.
- a method of forming the ferroelectric film by sputtering with a target containing Re and Mn facing a substrate on which a ferroelectric film is formed wherein the ferroelectric film is formed by sputtering.
- the content ratio of Re and Mn different, and / or by using an element further added with a tetravalent element, one of the above Re and Mn becomes ⁇ (20 at % Or a composition in which Z or a further tetravalent element is added, or a part of R e is replaced with a tetravalent element, and the basic structure is R e M n 0
- the ferroelectric material of ( 3 ) can be formed on the surface of the substrate by a sputtering method.
- Y was used as the lanthanide element Re, but similar results are obtained for lanthanide elements other than Y, such as Yb, Er, and Ho.
- FIG. 3 is a diagram showing a structural example of a semiconductor memory device using a ferroelectric film.
- a ferroelectric film 27 is directly formed on a surface of a channel region 26 sandwiched between a source region 22 and a drain region 23 of a semiconductor substrate 21, and a gate is formed thereon.
- This is an example of an MFS structure semiconductor memory device provided with an electrode 28.
- FIG. 3 structure shown in (b) of FIGS. 3 (a) and likewise made on the channel region 26 of the semiconductor substrate 21 and the like conventional S i 0 9 gate Bok insulating strength through the membrane 25 a dielectric film 27 1 is an example of a semiconductor memory device having an MFIS structure in which a gate electrode 28 is provided.
- the ferroelectric film 27 of the present invention has a basic structure of ReMnO 3 and has a small relative dielectric constant of about 20, so that most of the voltage applied to the gate electrode 28 is gated.
- the voltage is not sufficiently consumed by the gate insulating film 25, the voltage is sufficiently distributed to the ferroelectric film 27, and it is preferable that the voltage does not need to be increased more than necessary at the time of writing.
- the floating gate 24 can be made of Zn 0 doped with a trivalent element, and Zn 0 is easily formed on various substrates with c-axis orientation. It is the R e Mn 0 3 a good crystallinity of the ferroelectric film having a basic structure, arbitrary reluctant to easily obtain a ferroelectric film excellent ferroelectric characteristics.
- each of the above-mentioned semiconductor memory devices it is possible to manufacture using a normal semiconductor process. It can be manufactured by employing such a method.
- the patterning of the ferroelectric film may be performed by an RIE method or the like after the film formation, or may be performed by a lift-off method.
- the source and drain regions of the FET may be doped with impurities before forming the ferroelectric film, or may be formed by self-alignment after forming the ferroelectric film and the gate electrode. Is also good.
- the basic structure is an excess of either the R e M n 0 3 of R e and 0, not 1 atomic ratio of M n. 2 limits, and / or to the basic structure is the addition of tetravalent elemental material of R e M N_ ⁇ 3, it is possible to reduce the leakage current which is a defect of R e M n 0 3, the original R the ferroelectric film in e M n 0 3 high characteristic feature was sufficiently utilizing the film can be formed. As a result, electronic components using a ferroelectric film such as a semiconductor memory device and a thin film capacitor can be obtained with high characteristics and at low cost.
- the film formation conditions are such that the oxygen partial pressure is lower than that of ordinary oxide film formation conditions, so that oxygen or Since the film is formed while spraying an oxidizing source such as ozone, it is possible to prevent oxidation and composition deviation of the evaporation source target and to perform stable growth.
- an oxidizing source such as ozone
- structure can be obtained ferroelectric films of R e M n 0 3.
- the semiconductor memory device of the present invention since the basic structure is using excellent crystallinity ferroelectric film in R e M N_ ⁇ 3, small dielectric constant, the way in through the insulating film In addition, a sufficient voltage can be applied to the ferroelectric film, and a ferroelectric film that is difficult to pattern can be formed on the insulating film. So As a result, a high-performance semiconductor memory device can be obtained at low cost. Industrial applicability
- a ferroelectric film having a small dielectric constant and excellent crystallinity can be obtained, it can be applied to a nonvolatile semiconductor memory device or a thin film capacitor using the ferroelectric film.
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Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP97941264A EP0864537B1 (en) | 1996-09-27 | 1997-09-26 | Ferroelectric material, method of manufacturing the same, semiconductor memory, and method of manufacturing the same |
US09/068,996 US6245451B1 (en) | 1996-09-27 | 1997-09-26 | Ferroelectric material, method of manufacturing the same, semiconductor memory, and method of manufacturing the same |
DE69737283T DE69737283T2 (de) | 1996-09-27 | 1997-09-26 | Ferroelektrisches material, verfahren zu seiner herstellung, halbleiterspeicheranordnung und verfahren zu seiner herstellung |
CA002238857A CA2238857C (en) | 1996-09-27 | 1997-09-26 | Ferroelectric material, method of manufacturing the same, semiconductor memory, and method of manufacturing the same |
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
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JP25601596A JP3966928B2 (ja) | 1996-09-27 | 1996-09-27 | 強誘電体材料の製法および半導体記憶装置 |
JP8256017A JPH10101431A (ja) | 1996-09-27 | 1996-09-27 | 強誘電体材料の製法および半導体記憶装置とその製法 |
JP8/256014 | 1996-09-27 | ||
JP8256014A JPH10101428A (ja) | 1996-09-27 | 1996-09-27 | 強誘電体材料およびその製法ならびに半導体記憶装置 |
JP8256016A JPH10101430A (ja) | 1996-09-27 | 1996-09-27 | 強誘電体材料の製法および半導体記憶装置とその製法 |
JP8/256016 | 1996-09-27 | ||
JP8/256017 | 1996-09-27 | ||
JP8/256015 | 1996-09-27 |
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WO1998013300A1 true WO1998013300A1 (en) | 1998-04-02 |
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PCT/JP1997/003455 WO1998013300A1 (en) | 1996-09-27 | 1997-09-26 | Ferroelectric material, method of manufacturing the same, semiconductor memory, and method of manufacturing the same |
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US (1) | US6245451B1 (ja) |
EP (1) | EP0864537B1 (ja) |
KR (1) | KR100490518B1 (ja) |
CA (1) | CA2238857C (ja) |
DE (1) | DE69737283T2 (ja) |
WO (1) | WO1998013300A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US6674110B2 (en) | 2001-03-02 | 2004-01-06 | Cova Technologies, Inc. | Single transistor ferroelectric memory cell, device and method for the formation of the same incorporating a high temperature ferroelectric gate dielectric |
US6825517B2 (en) | 2002-08-28 | 2004-11-30 | Cova Technologies, Inc. | Ferroelectric transistor with enhanced data retention |
Families Citing this family (10)
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JP3704258B2 (ja) * | 1998-09-10 | 2005-10-12 | 松下電器産業株式会社 | 薄膜形成方法 |
JP2004519864A (ja) * | 2000-08-24 | 2004-07-02 | コバ・テクノロジーズ・インコーポレイテッド | シングルトランジスタ希土類亜マンガン酸塩強誘電体不揮発性メモリセル |
US6888736B2 (en) | 2002-09-19 | 2005-05-03 | Cova Technologies, Inc. | Ferroelectric transistor for storing two data bits |
US6714435B1 (en) * | 2002-09-19 | 2004-03-30 | Cova Technologies, Inc. | Ferroelectric transistor for storing two data bits |
TWI226377B (en) * | 2002-11-08 | 2005-01-11 | Ind Tech Res Inst | Dielectric material compositions |
US8256386B2 (en) * | 2009-01-08 | 2012-09-04 | Honda Motor Co., Ltd. | Saddle-ride vehicle |
US9378760B2 (en) | 2014-07-31 | 2016-06-28 | Seagate Technology Llc | Data reader with tuned microstructure |
EP3182048A1 (en) | 2015-12-16 | 2017-06-21 | Alfa Laval Corporate AB | Porthole gasket, assembly for a heat exchanger and heat exchanger comprising such an assembly |
US10615176B2 (en) * | 2017-11-22 | 2020-04-07 | International Business Machine Corporation | Ferro-electric complementary FET |
KR102050034B1 (ko) | 2018-03-22 | 2019-11-28 | 서울대학교산학협력단 | 비휘발성 메모리 소자용 재료 및 이의 제조방법 |
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1997
- 1997-09-26 DE DE69737283T patent/DE69737283T2/de not_active Expired - Fee Related
- 1997-09-26 EP EP97941264A patent/EP0864537B1/en not_active Expired - Lifetime
- 1997-09-26 US US09/068,996 patent/US6245451B1/en not_active Expired - Fee Related
- 1997-09-26 KR KR10-1998-0703890A patent/KR100490518B1/ko not_active IP Right Cessation
- 1997-09-26 WO PCT/JP1997/003455 patent/WO1998013300A1/ja active IP Right Grant
- 1997-09-26 CA CA002238857A patent/CA2238857C/en not_active Expired - Fee Related
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JPH0963991A (ja) * | 1995-08-25 | 1997-03-07 | Tdk Corp | 強誘電体薄膜、電子デバイスおよび強誘電体薄膜の製造方法 |
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US6908772B2 (en) | 2001-03-02 | 2005-06-21 | Cova Technologies, Inc. | Single transistor ferroelectric memory cell, device and method for the formation of the same incorporating a high temperature ferroelectric gate dielectric |
US6825517B2 (en) | 2002-08-28 | 2004-11-30 | Cova Technologies, Inc. | Ferroelectric transistor with enhanced data retention |
Also Published As
Publication number | Publication date |
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KR100490518B1 (ko) | 2005-09-09 |
KR19990071614A (ko) | 1999-09-27 |
EP0864537A4 (en) | 2001-07-11 |
CA2238857C (en) | 2002-11-19 |
EP0864537B1 (en) | 2007-01-24 |
DE69737283T2 (de) | 2007-11-15 |
US6245451B1 (en) | 2001-06-12 |
CA2238857A1 (en) | 1998-04-02 |
EP0864537A1 (en) | 1998-09-16 |
DE69737283D1 (de) | 2007-03-15 |
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