WO1997036025A1 - Procede de production de silicium monocristallin - Google Patents
Procede de production de silicium monocristallin Download PDFInfo
- Publication number
- WO1997036025A1 WO1997036025A1 PCT/JP1997/000993 JP9700993W WO9736025A1 WO 1997036025 A1 WO1997036025 A1 WO 1997036025A1 JP 9700993 W JP9700993 W JP 9700993W WO 9736025 A1 WO9736025 A1 WO 9736025A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- crystal
- silicon single
- single crystal
- diameter
- speed
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
- C30B15/305—Stirring of the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/917—Magnetic
Definitions
- the present invention relates to a method for producing a silicon single crystal by the MCZ method.
- the MCZ method has been conventionally used. According to the MCZ method, it is possible to suppress the convection of the melt by applying a magnetic field at the time of pulling the crystal, and to suppress the oxygen dissolved in the melt from being taken into the pulled crystal.
- the crystal rotation speed during crystal growth is important for obtaining uniformity of the in-plane distribution of impurities in the obtained wafer. It is a difficult growth condition, and it is a problem that it falls below a certain level.
- an object of the present invention is to provide a method capable of producing a large-diameter silicon single crystal without twisting by the MCZ method. Disclosure of the invention
- the present invention relates to a method for producing a silicon single crystal by the MCZ method, wherein the crystal growth speed V, (mmZ minute) and the crystal outer peripheral portion speed V 2 when pulling up the silicon single crystal while rotating it. (mmZ)
- a method for producing a silicon single crystal characterized in that the single crystal is pulled under conditions satisfying the following.
- the reason that the crystal is easily twisted by the MCZ method is considered to be that the viscosity of the melt increases by applying a magnetic field, and as a result, the load on the crystal rotation increases.
- large-diameter crystals are likely to be twisted because increasing the diameter of the crystal increases the heat capacity, lowers the cooling rate of the crystal, and substantially increases the speed at the outer periphery of the crystal. This is considered a major factor.
- the twist of a crystal depends on the crystal diameter, crystal growth rate, and crystal rotation rate. You.
- the upper limit of the crystal cultivation rate at which no twist occurs in the crystal depends on the crystal diameter, and the upper limit decreases as the crystal diameter increases. As a result of a detailed study, it was found that regardless of the crystal diameter, no twist occurred when the velocity (linear velocity) at the outer periphery of the crystal was below a certain value.
- the single crystal is pulled under the condition satisfying the above condition, the crystal can be grown without twisting.
- This condition corresponds to the area enclosed by the line in FIG.
- the upper limit of the crystal rotation speed is determined by the case where it becomes meaningless for quality improvement and the case where deformation occurs.
- the lower limit is where the problem of crystal quality appears, and it is almost determined by the speed at the outer periphery of the crystal.
- the upper limit of the crystal growth rate is where the problem of crystal quality appears, and the crystal rotation speed and Correlated.
- the lower limit of the crystal growth rate is determined by problems such as a decrease in productivity.
- the crystal diameter is not limited as long as the above conditions are satisfied, but it is particularly effective when the crystal diameter is as large as 8 "or more.
- FIG. 1 is a view showing an appropriate range of a crystal peripheral speed and a crystal growth speed in the present invention.
- FIG. 2 is a diagram showing an appropriate range of the crystal rotation speed and the crystal growth speed when growing crystals with various diameters.
- V 2 crystal rotation speed (rpm) X crystal circumference length (mm)
- the crystal will be deformed. Whether or not the crystal is deformed can be evaluated by observing the crystal habit line appearing on the crystal surface. The habit line of the undeformed crystal continues without interruption. Deformation The habit line of the resulting crystal is interrupted in the middle and is temporarily divided into two lines. Therefore, whether or not the habit line was interrupted was observed, and the deformation was determined to be “present” when the habit line was interrupted, and “absent” when the habit line was not interrupted.
- the crystal quality was evaluated by the in-plane distribution of interstitial oxygen concentration in the crystal cross section. That is, the interstitial oxygen concentration Xc at the center of the crystal cross section and the interstitial oxygen concentration X at a position 10 mm away from the periphery toward the center. Is measured, and
- the crystal quality was evaluated as “good” when the value was 8% or less, and “bad” when the value exceeded 8%.
- FIG. 2 shows an appropriate range of the crystal growth rate and the crystal rotation rate in the case of performing crystal growth with diameters of 8 ′′ 0, 12 ′′ 0 and 16 ′′ °.
- the method for producing a silicon single crystal according to the present invention can efficiently produce a large-diameter silicon single crystal without twisting by the MCZ method.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP97907461A EP0829561B1 (en) | 1996-03-27 | 1997-03-25 | Process for producing silicon single crystal |
DE69713231T DE69713231T2 (de) | 1996-03-27 | 1997-03-25 | Verfahren zur herstellung von silizium-einkristallen |
US08/952,481 US5976246A (en) | 1996-03-27 | 1997-03-27 | Process for producing silicon single crystal |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP09776196A JP3443822B2 (ja) | 1996-03-27 | 1996-03-27 | シリコン単結晶の製造方法 |
JP8/97761 | 1996-03-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1997036025A1 true WO1997036025A1 (fr) | 1997-10-02 |
Family
ID=14200865
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP1997/000993 WO1997036025A1 (fr) | 1996-03-27 | 1997-03-25 | Procede de production de silicium monocristallin |
Country Status (7)
Country | Link |
---|---|
US (1) | US5976246A (ja) |
EP (1) | EP0829561B1 (ja) |
JP (1) | JP3443822B2 (ja) |
KR (1) | KR100418542B1 (ja) |
DE (1) | DE69713231T2 (ja) |
TW (1) | TW524899B (ja) |
WO (1) | WO1997036025A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0926718A2 (en) * | 1997-12-17 | 1999-06-30 | Shin-Etsu Handotai Company Limited | Heat treatment method for monocrystalline silicon wafers |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10310485A (ja) * | 1997-04-30 | 1998-11-24 | Sumitomo Sitix Corp | 単結晶育成方法 |
JPH11268987A (ja) * | 1998-03-20 | 1999-10-05 | Shin Etsu Handotai Co Ltd | シリコン単結晶およびその製造方法 |
KR100450402B1 (ko) | 2002-04-17 | 2004-09-30 | 한국전자통신연구원 | 컴퓨터 시스템에 있어서 보안속성을 갖는 토큰을 이용한접근 제어방법 |
JP4484540B2 (ja) * | 2004-02-19 | 2010-06-16 | Sumco Techxiv株式会社 | 単結晶半導体の製造方法 |
US8795432B2 (en) | 2007-05-30 | 2014-08-05 | Sumco Corporation | Apparatus for pulling silicon single crystal |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62256790A (ja) * | 1986-04-28 | 1987-11-09 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 半導体単結晶の製造方法およびその製造装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62105998A (ja) * | 1985-10-31 | 1987-05-16 | Sony Corp | シリコン基板の製法 |
JP2546736B2 (ja) * | 1990-06-21 | 1996-10-23 | 信越半導体株式会社 | シリコン単結晶引上方法 |
US5196085A (en) * | 1990-12-28 | 1993-03-23 | Massachusetts Institute Of Technology | Active magnetic flow control in Czochralski systems |
JP2726583B2 (ja) * | 1991-11-18 | 1998-03-11 | 三菱マテリアルシリコン株式会社 | 半導体基板 |
-
1996
- 1996-03-27 JP JP09776196A patent/JP3443822B2/ja not_active Expired - Fee Related
-
1997
- 1997-03-10 TW TW086102898A patent/TW524899B/zh not_active IP Right Cessation
- 1997-03-25 KR KR1019970708531A patent/KR100418542B1/ko not_active IP Right Cessation
- 1997-03-25 WO PCT/JP1997/000993 patent/WO1997036025A1/ja active IP Right Grant
- 1997-03-25 EP EP97907461A patent/EP0829561B1/en not_active Expired - Lifetime
- 1997-03-25 DE DE69713231T patent/DE69713231T2/de not_active Expired - Lifetime
- 1997-03-27 US US08/952,481 patent/US5976246A/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62256790A (ja) * | 1986-04-28 | 1987-11-09 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 半導体単結晶の製造方法およびその製造装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0926718A2 (en) * | 1997-12-17 | 1999-06-30 | Shin-Etsu Handotai Company Limited | Heat treatment method for monocrystalline silicon wafers |
Also Published As
Publication number | Publication date |
---|---|
US5976246A (en) | 1999-11-02 |
EP0829561A4 (en) | 1999-06-02 |
TW524899B (en) | 2003-03-21 |
JP3443822B2 (ja) | 2003-09-08 |
KR100418542B1 (ko) | 2004-04-21 |
KR19990022052A (ko) | 1999-03-25 |
JPH09263493A (ja) | 1997-10-07 |
DE69713231D1 (de) | 2002-07-18 |
DE69713231T2 (de) | 2003-02-20 |
EP0829561B1 (en) | 2002-06-12 |
EP0829561A1 (en) | 1998-03-18 |
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